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Full text of "National Semiconductor Operational Amplifiers Data Book1995OCR"

DISCRETE 

DATABOOK 

NATIONAL 
SEMICONDUCTOR 




£ox 39126. 

DISCRETE - *m! 

DATABOOK 



NATIONAL 
SEMICONDUCTOR 



NPN Transistors 

PNP Transistors 

Pro Electron Series 

JEIDA Series 

NA/NB/NR Series 

Process Characteristics 
Double-Diffused Epitaxial Transistors 

Process Characteristics Mesa Transistors 
JFET Selection Guide 
Process Characteristics JFETs 



■ 



© National Semiconductor Corporation 

2900 Semiconductor Drive, Santa Clara, California 95051. 
(4081 737-5000/TWX (9101 339-9240 

National does not assume any responsibility for use of any circuitry 
described; no circuit patent licenses are implied, and National 
reserves the right, at any time without notice, to change said circuitry. 



Manufactured under one or more of the following U.S. patents: 
3083262. 3189758. 
3381071, 3408542, 
3519897, 3557431 
3579059, 3593069 
3633052. 3638131. 



3231797 
3421025 
3560765, 3566218 
3597640, 3607469 
3648071, 3651565 



3303356, 3317671 
3426423. 3440498 



3323071. 
3518750. 
3571630, 3575609, 
3617859, 3631312. 
3693248. 



National Semiconductor has added many new 
transistors and product families since publication 
of the last handbook. Many have already been 
widely acclaimed by users. 

In addition to small signal, bipolar and field effect 
transistors that have been the mainstay of our 
catalog, there are sections for multiple bipolar, 
multiple field effect and power transistors. More 
part numbers will be added as market needs 
expand. 

To keep current on all new National transistors 
please contact your National sales representative 
or franchised distributor and ask to be placed on 
the customer mailing list. 

HOW TO USE THIS CATALOG 

If you know the part/type number 
Turn to the standard parts listing which begins 
on page 9 and find the desired part number. The 
electrical specifications page number will be 
shown. The list also identifies the process num- 
ber from which that product is selected and the 
particular package code in which it is assembled. 
Package codes are cross-referenced to JEDEC 
code on page A-19. 

If performance data is required, turn to the 
process data sheet indicated in the standard 
parts listing. Process data sheets are indexed in 
numerical order and begin on page 6-2. 

Refer to the package outlines section beginning 
on page A-14 for complete physical dimensions. 



If you know the application 

Turn to the selector guide and select a potential 
process type. Selector guides as follows: 



GUIDE PAGE 

RF Selector 41 

NPN General Purpose Amplifiers 42 

PNP General Purpose Amplifiers 44 

NPN-RF Amplifier 43 

High Speed Switches 45 

Power Transistors 46 

FET Application 30 



Refer to the process sheet which will give you 
the performance specifications and a reference 
part type. 

To convert a metal can transistor to a molded 
epoxy type, find the equivalent part number on 
page 25. 

To convert a TO-105/TO-106 product type to a 
molded epoxy type, find the correct part number 
on page 26. 

If you are looking for a JAN/JANTX/JANTXV 
type, a complete product listing for bipolar and 
junction FET types is on page 23. 

If none of the above work, refer to the Table of 
Contents which contains all NSC part types organ- 
ized by general applications. 

In desperation -call your local National represen- 
tative or field office. 



Table of Contents 



Introduction — How to Use This Catalog ■ 3 

Transistor Standard Parts List. . 9 

FET Parts List 20 

MIL-STD Qualifications 23 

Bipolar Transistor and FET Dice 24 

Bipolar Transistor Equivalents List 25 

Conversion of TO-105/TO-106 to TO-92 26 

Choose the Proper FET 29 

FET Application Guide 30 

JFET Cross-Reference Guide 33 

RF Selector Guide 41 

Transistors NPN GPA Devices 42 

Transistors NPN RF Devices 43 

Transistors PNP GPA Devices 44 

Transistors for High Speed Switching 45 

Power Transistor Selector Guide 46 

Power Transistor Part Number Listing 47 

92+ Power Transistor Reference Guide 48 

TO-202 Power Transistor Reference Guide 49 

TO- 126 Power Transistor Reference Guide 50 

TO-220 Power Transistor Reference Guide 51 

TO-3 Power Transistor Reference Guide 52 

Section 1— NPN Transistors 

Saturated Switches T2 

RF Amps and Oscillators 1-6 

Low Level Amps 1-11 

General Purpose Amps and Switches 1-15 

Medium Power T28 

Power 1-40 

Darlington 1-50 

Dual Differential Amps T51 

Section 2— PNP Transistors 

Saturated Switches 2-2 

Low Level Amps 2-6 

General Purpose Amps and Switches 2-8 

Medium Power 2-19 

Power 2-26 

Dual Differential Amps 2-33 

Section 3— Pro Electron Series 

Pro Electron Series 3-2 

Section 4-JEIDA Series 

JEIDA Series 4-2 



Section 5— NA/NB/NR Series 

NA/NB Transistor Series Selection Guide 5-2 

NA01 (NPN), NA02 (PNP) 800 mA Complementary Power Transistors. . . 5-4 

NA1 1 (NPN), NA12 (PNP) 1 Amp Complementary Power Transistors. ... 5-8 

NA21 (NPN), NA22 (PNP) 1 .5 Amp Complementary Power Transistors . . 5-12 

NA31 (NPN), NA32 (PNP) 2 Amp Complementary Power Transistors . . . . 5-16 

NA41 (NPN), NA42 (PNP) 2.5 Amp Complementary Power Transistors . . 5 20 

NA51 (NPN), NA52 (PNP) 3.5 Amp Complementary Power Transistors . . 5-24 

NA61 (NPN), NA62 (PNP) 4.5 Amp Complementary Power Transistors . . 5-28 

NA71 (NPN), NA72 (PNP) 3.5 Amp Complementary Power Transistors . . 5-32 
NB011, 012 (NPN), N3021, 022 (PNP) 30 mA General Purpose 

Transistors 5-36 

NB013, 014 (NPN), NB023, 024 (PNP) 30 mA Low Noise Transistors 5-40 

NB111, 112, 113 (NPN). NB121, 122, 123 (PNP) 100 mA General 

Purpose Transistors 5-44 

NB211, 212, 213 (NPN), NB221, 222, 223 (PNP) 500 mA Medium 

Current Driver Transistors 5-48 

NB311, 312, 313 (NPN), NB321, 322, 323 (PNP) 1.5 Amp Complementary 

Power Drivers 5-52 

NR421 (NPN) VHF Amplifier/FM Converter Transistor 5-56 

NR431 (NPN) HF Amplifier/FM Converter Transistor 5-60 

NR461 (NPN) Low-Noise RF/IF Transistor 5-64 

NR041 (NPN) Low-Level Signal Switching Transistor 5-68 

Section 6— Process Characteristics 
Double-Diffused Epitaxial Transistors 

Process 02 NPN Small Signal 6-2 

Process 04 NPN Small Signal 6-4 

Process 05 NPN Darlington 6-7 

Process 07 NPN Small Signal 6-9 

Process 08 NPN High Voltage 6-12 

Process 09 NPN Medium Power 6-14 

Process 12 NPN Medium Power 6-16 

Process 13 NPN Medium Power 6-19 

Process 14 NPN Medium Power 6-22 

Process 16 NPN High Voltage 6-24 

Process 19 NPN Medium Power 6-26 

Process 20 NPN Medium Power 6-28 

Process 21 NPN High Speed Switch 6-31 

Process 22 NPN Small Signal 6-35 

Process 23 NPN Small Signal 6-39 

Process 25 NPN Memory Driver 6-42 

Process 27 NPN Small Signal 6-45 

Process 29 NPN HF Amp 6-48 

Process 35 NPN RF-HF Power Amplifier 6-50 

Process 36 NPN High Voltage Power 6-52 

Process 37 NPN Medium Power 6-54 



6 



Table of Contents (continued) 



Section 6— Process Characteristics 
Double-Diffused Epitaxial Transistors (continued) 

Process 38 NPN Medium Power 6-56 

Process 39 NPN Medium Power 6-58 

Process 41 NPN AGC-UHF, Amp Mixer 6-60 

Process 42 NPN RF Amp 6-62 

Process 43 NPN VHF/UHF Oscillator 6-65 

Process 44 NPN AGC-RF Amp 6-68 

Process 45 NPN AGC-IF Amp 6-73 

Process 46 NPN RF-IF Amp 6-77 

Process 47 NPN RF-IF Amp 6-80 

Process 48 NPN High Voltage Video Output 6-84 

Process 49 NPN RF Amp 6-86 

Process 60 PNP Medium Power 6-89 

Process 62 PNP Small Signal 6-92 

Process 63 PNP Medium Power 6-95 

Process 64 PNP High Speed Switch 6-98 

Process 65 PNP High Speed Switch 6-102 

Process 66 PNP Small Signal 6-105 

Process 67 PNP Medium Power 6-108 

Process 69 PNP Small Signal 6-110 

Process 70 PNP Memory Driver 6-113 

Process 71 PNP Small Signal '. 6-116 

Process 73 PNP High Voltage 6-118 

Process 74 PNP High Voltage 6-120 

Process 77 PNP Medium Power 6-1 22 

Process 78 PNP Medium Power 6-124 

Process 79 PNP Medium Power 6-126 

Section 7— Process Characteristics Mesa Transistors 

Process 2C/4F NPN Epitaxial Power 7-2 

Process 2E/4E NPN Epitaxial Power 7-4 

Process 2J/4J NPN Power Darlington 7-6 

Process 3C/5F PNP Epitaxial Power 7-8 

Process 3E/5E PNP Epitaxial Power 7-10 

Process 3J/5J PNP Power Darlington 7-12 

Process 4A NPN Epitaxial Power 7-14 

Process 4B NPN Epitaxial Power 7-16 

Process 4C NPN Epitaxial Power 7-18 

Process 4G NPN Epitaxial Power 7-20 

Process 4K NPN Epitaxial Power 7-21 

Process 5A PNP Epitaxial Power 7-23 

Process 5B PNP Epitaxial Power 7-25 

Process 5C PNP Epitaxial Power 7-27 

Process 5G PNP Epitaxial Power 7-29 

Process 5K PNP Epitaxial Power 7-30 



Table of Contents (Continued) 



Section 8— JFET Selection Guide 

JFET Selection Guide 8-2 

Section 9— Process Characteristics JFETs 

Process 50 N-Channel JFET 9-2 

Process 51 N-Channel JFET 9-5 

Process 52 N-Channel JFET 9-7 

Process 53 N-Channel JFET 9-9 

Process 55 N-Channel JFET 9-11 

Process 58 N Channel JFET 9-13 

Process 83 N-Channel Monolithic Dual JFET 9-15 

Process 84 N-Channel Monolithic Dual JFET 9-17 

Process 86* N-Channel Monolithic Dual JFET 9-19 

Process 88 P-Channel JFET 9-20 

Process 89 P-Channel JFET 9-22 

Process 90 N-Channel JFET 9-24 

Process 92 N-Channel JFET 9-26 

Process 93 N-Channel Monolithic Dual JFET 9-28 

Process 94 N-Channel Monolithic Dual JFET 9-30 

Process 95 N-Channel Monolithic Dual JFET 9-32 

Process 96 N-Channel Monolithic Dual JFET 9-34 

Process 98* N-Channel Monolithic Dual JFET 9-36 



Appendices 

Transistor Glossary of Symbols A-2 

JFET Glossary of Symbols A-9 

Package Outlines A-14 

NSC Package Code to JEDEC Code A-19 

'Process in development 



8 

— • 



Transistor Standard Parts List 



Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


2N697 


1-15 


20 


04 


2N2219JTX 


1-16 


20 


04 


2N2722 


1-51 


07 


30 


2N699 


1-28 


12 


10 


2N2219JTXV 


1-16 


20 


04 


2N2857 


16 


42 


25 


2N706 


1-2 


21 


18 


2N2219A 


1-16 


20 


04 


2N2857J 


1-6 


42 


25 


2N706J 


1-2 


21 


02 


2N2219AJ 


1-16 


20 


04 


2N2857JTX 


16 


42 


25 


2N708 


1-2 


22 


18 


2N2219AJTX 


1-16 


20 


04 


2N2857JTXV 


1-6 


42 


25 


2N718 


1-15 


20 


02 


2N2219AJTXV 


1-16 


20 


04 


2N2894 


2-2 


64 


18 


2N718A 


1-15 


20 


02 


2N2221 


1-16 


20 


02 


2N2894A 


2-2 


64 


18 


2N722 


2-8 


63 


02 


2N2221J 


1-17 


20 


02 


2N2903 


1-51 


07 


30 


2N743 


1-2 


21 


18 


2N2221JTX 


1-17 


20 


02 


2N2903A 


1-51 


07 


30 


2N744 


1-2 


21 


18 


2N2221JTXV 


1-17 


20 


02 


2N2904 


2-9 


63 


04 


2N753 


1-2 


21 


18 


2N2221A 


1-17 


20 


02 


2N2904J 


2-9 


63 


04 


2N760 


1-11 


07 


02 


2N2221AJ 


1-17 


20 


02 


2N2904JTX 


2-9 


63 


04 


2N760A 


1-11 


07 


02 


2N2221AJTX 


1-17 


20 


02 


2N2904JTXV 


2 9 


63 


04 


2N834 


1-2 


21 


18 


2N2221 AJTXV 


1-17 


20 


02 


2N2904A 


2-9 


63 


04 


2N869 


2-2 


64 


18 


2N2222 


1-17 


20 


02 


2N2904AJ 


2-9 


63 


04 


2N869A 


2-2 


64 


18 


2N2222J 


1-17 


20 


02 


2N2905AJTX 


2-9 


63 


04 


2N915 


1-15 


23 


02 


2N2222JTX 


1-17 


20 


02 


2N2904 AJTXV 


2-9 


63 


04 


2N916 


1-15 


23 


02 


2N2222JTXV 


1-17 


20 


02 


2N2905 


2-9 


63 


04 


2N917 


1-6 


43 


25 


2N2222A 


1-17 


20 


02 


2N2905J 


2-9 


63 


04 


2N918 


1-6 


43 


25 


2N2222AJ 


1-17 


20 


02 


2N2905JTX 


2-9 


63 


04 


2N918J 


1-6 


43 


25 


2N2222AJTX 


1-17 


20 


02 


2N2905JTXV 


2-9 


63 


04 


2N918JTX 


1-6 


43 


25 


2N2222AJTXV 


1-17 


20 


02 


2N2905A 


2-9 


63 


04 


2N918JTXV 


1-6 


43 


25 


2N2243 


1-29 


12 


10 


2N2905AJ 


2-10 


63 


04 


2N929 


1-11 


07 


02 


2N2243A 


1-29 


12 


10 


2N2905AJTX 


2-10 


63 


04 


2N929A 


1-1 1 


07 


02 


2N2270 


1-29 


12 


10 


2N2905AJTXV 


2-10 


63 


04 


2N929J 


1-1 1 


07 


02 


2N2369 


1-2 


21 


18 


2N2906 


2-10 


63 


02 


2N929JTX 


1-11 


07 


02 


2N2369A 


1-2 


21 


18 


2N2906J 


2-10 


63 


02 


2N930 


1-11 


07 


02 


2N2369AJ 


1-2 


21 


02 


2N2906JTX 


2-10 


63 


02 


2N930A 


1-11 


07 


02 


2N2369AJTX 


1-2 


21 


02 


2N2906JTXV 


2-10 


63 


02 


2N930J 


1-11 


07 


02 


2N2369AJTXV 


1-2 


21 


02 


2N2906A 


2-10 


63 


02 


2N930JTX 


1-11 


07 


02 


2N2453 


1-51 


07 


30 


2N2906AJ 


2-10 


63 


02 


2N956 


1-15 


20 


02 


2N2453A 


1-51 


07 


30 


2N2906AJTX 


2-10 


63 


02 


2N981 


1-1 1 


07 


02 


2 N 2484 


1-11 


07 


02 


2N2906 AJTXV 


2-10 


63 


02 


2N995 


2-2 


64 


18 


2N 2484J 


1-11 


07 


02 


2N2907 


2-10 


63 


02 


2N995A 


2-2 


64 


18 


2N2484JTX 


1-11 


07 


02 


2N2907J 


2-10 


63 


02 


2N1132 


2-8 


63 


04 


2N2484JTXV 


1-11 


07 


02 


2N2907JTX 


2-10 


63 


02 


2N1420 


1-15 


20 


04 


2N2504 


1-12 


07 


02 


2N2907JTXV 


2-10 


63 


02 


2N1566 


1-15 


20 


04 


2N2509 


1-11 


07 


02 


2N2907A 


2-10 


63 


02 


2N1613 


1-15 


20 


04 


2N2510 


1-11 


07 


02 


2N2907AJ 


2-11 


63 


02 


2N1711 


1-15 


20 


04 


2N2511 


1-12 


07 


06 


2N2907AJTX 


2-11 


63 


02 


2N2017 


1-28 


12 


10 


2N2586 


1-12 


07 


02 


2N2907 AJTXV 


2-11 


63 


02 


2N2102 


1-28 


12 


10 


2N2604 


2-6 


62 


06 


2N2913 


1-51 


07 


30 


2N2192 


1-28 


12 


10 


2N2604J 


2-6 


62 


06 


2N2914 


1-51 


07 


30 


2N2192A 


1-28 


12 


10 


2N2604JTX 


2-6 


62 


06 


2N2915 


1-52 


07 


30 


2N2193 


1-28 


12 


10 


2N2604JTXV 


2-6 


62 


06 


2N2915A 


1-52 


07 


30 


2N2193A 


1-28 


12 


10 


2N2605 


2-6 


62 


06 


2N2916 


1-52 


07 


30 


2N2195 


1-28 


12 


10 


2N2605J 


2-6 


62 


06 


2N2916A 


1-52 


07 


30 


2N2195A 


1-28 


12 


10 


2N2605JTX 


26 


62 


06 


2N2917 


1-52 


07 


30 


2N2218 


1-15 


20 


04 


2N2605JTXV 


2-6 


62 


06 


2N2918 


1-52 


07 


30 


2N2218J 


1-15 


20 


04 


2N2639 


1-51 


07 


30 


2N2919 


1-52 


07 


30 


2N2218JTX 


1-15 


20 


04 


2N2640 


1-51 


07 


30 


2N2919A 


1 52 


07 


30 


2N2218JTXV 


1-15 


20 


04 


2N2641 


1-51 


07 


30 


2N2920 


1-52 


07 


30 


2N2218A 


1-16 


20 


04 


2N2642 


1-51 


07 


30 


2N2920J 


1-52 


07 


30 


2N2218AJ 


1-16 


20 


04 


2N2643 


1-51 


07 


30 


2N2920JTX 


1-52 


07 


30 


2N2218AJTX 


1-16 


20 


04 


2N2644 


1-51 


07 


30 


2N2920JTXV 


1-52 


07 


27 


2N2218AJTXV 


1-16 


20 


04 


2N2696 


2-8 


63 


02 


2N2920A 


1-52 


07 


30 


2N2219 


1-16 


20 


04 


2N2712 


1-17 


27 


74 


2N2923 


1-18 


04 


74 


2N2219J 


1-16 


20 


04 


2N2714 


1-18 


27 


74 


2N2924 


1-18 


04 


74 



5 



(ft 

o 
(/) 

ft- 
0) 
3 

a 

0) 



"D 

03 

(ft 



Transistor Standard Parts List (continued) 



Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


2N2925 


1-18 


04 


74 


2N3302 


1-18 


20 


02 


2N3568 


1-31 


12 


72 


2N2926 


1-18 


04 


74 


2N3304 


2-3 


65 


18 


2N3569 


1-31 


14 


72 


2N2972 


1-52 


07 


08 


2N3347 


2-33 


62 


30 


2N3576 


2-3 


64 


18 


2N2973 


1-52 


07 


08 


2N3348 


2-33 


62 


30 


2N3587 


1-53 


07 


30 


2N2974 


1-53 


07 


08 


2N3349 


2 33 


62 


30 


2N3600 


1-7 


42 


25 


2N2975 


1-53 


07 


08 


2N3350 


2-33 


62 


30 


2N3605 


1-3 


21 


74 


2N2976 


1-53 


07 


08 


2N3351 


2-33 


62 


30 


2N3606 


1-3 


21 


74 


2N2977 


1-53 


07 


08 


2N3352 


2-33 


62 


30 


2N3607 


1-3 


21 


74 


2N2978 


1-53 


07 


08 


2N3390 


1-18 


04 


74 


2N3634 


2-19 


73 


10 


2N2979 


1-53 


07 


08 


2N3391 


1-18 


04 


74 


2N3634J 


2-19 


73 


09 


2N3009 


1-2 


22 


18 


2N3391A 


1-19 


04 


74 


2N3634JTX 


2-19 


73 


09 


2N301 1 


1-2 


21 


18 


2N3392 


1-19 


04 


74 


2N3635 


2-19 


73 


10 


2N3012 


2-2 


64 


18 


2N3393 


1-19 


04 


74 


2N3635 


2-19 


73 


09 


2N3013 


1-2 


22 


18 


2IM3394 


1-19 


04 


74 


2N3635JTX 


2-19 


73 


09 


2N3015 


1-2 


25 


17 


2N3395 


1-19 


04 


74 


2N3636 


2-19 


73 


10 


2N3019 


1-29 


12 


10 


2N3396 


1-19 


04 


74 


2N3636J 


2-19 


73 


09 


2N3019J 


1-29 


12 


09 


2N3397 


1-19 


04 


74 


2N3636JTX 


.2-19 


73 


09 


2N3019JTX 


1-29 


12 


09 


2N3398 


1-19 


04 


74 


2N3637 


2-19 


73 


10 


2N3019JTXV 


1-29 


12 


16 


2N3414 


1-19 


19 


74 


2N3637J 


2-19 


73 


09 


2N3020 


1-30 


12 


10 


2IM3415 


1-19 


04 


74 


2N3637JTX 


2-19 


73 


09 


2N3053 


1-30 


12 


10 


2N3416 


1-19 


04 


74 


2N3638 


2-12 


63 


72 


2N3072 


2-11 


63 


04 


2N3417 


1-19 


04 


74 


2IM3638A 


2-13 


63 


72 


2N3073 


2-1 1 


63 


02 


2N3444 


1-3 


25 


17 


2N3639 


2-3 


65 


72 


2N3107 


1-30 


12 


10 


2N3451 


2-3 


65 


18 


2N3640 


2-3 


65 


72 


2N3108 


1-30 


12 


10 


2N3467 


23 


70 


17 


2N3641 


1-19 


19 


72 


2N3109 


1-30 


12 


10 


2N3468 


2-3 


70 


17 


2N3642 


1-19 


19 


72 


2N31 10 


1-30 


14 


10 


2N3478 


1-6 


42 


25 


2N3643 


1-19 


19 


72 


2N31 14 


1-30 


08 


10 


2N3498 


1-30 


08 


10 


2N3644 


2-13 


63 


72 


2N31 15 


1-18 


20 ' 


02 


2N3498J 


1-30 


08 


09 


2N3646 


1-3 


22 


72 


2N31 16 


1-18 


20 


02 


2N3498JTX 


1-30 


08 


09 


2N3662 


1-7 


43 


74 


2N31 17 


1-12 


07 


02 


2N3498JTXV 


1-30 


08 


09 


2N3663 


1-7 


43 


74 


2N3120 


2-1 1 


63 


04 


2N3499 


1-30 


08 


10 


2N3665 


1-31 


12 


10 


2N3121 


2-1 1 


63 


02 


2N3499J 


1-31 


08 


09 


2N3666 


1-32 


12 


10 


2IM3133 


2-1 1 


63 


04 


2N3499JTX 


1 -31 


08 


09 


2N3678 


1-19 


20 


04 


2N3134 


2-11 


63 


04 


2N3499JTXV 


1-31 


08 


09 


2N3691 


1-20 


23 


72 


2N3135 


2-11 


63 


02 


2IM3500 


1-31 


08 


10 


2N3692 


1-20 


23 


72 


2N3136 


2-11 


63 


02 


2N3500J 


1-31 


08 


09 


2N3693 


1-20 


27 


72 


2N3209 


2-2 


64 


18 


2N3500JTX 


1-31 


08 


09 


2N3694 


1-20 


27 


72 


2N3244 


2-2 


70 


17 


2N3500JTXV 


1-31 


08 


09 


2N3700 


1 32 


12 


02 


2N3245 


2-2 


70 


17 


2N3501 


1-31 


08 


10 


2N3700J 


1-32 


12 


02 


2N3246 


1-12 


07 


02 


2N3501J 


1-31 


08 


09 


2N3700JTX 


1-32 


12 


02 


2N3248 


2-2 


64 


18 


2N3501JTX 


1-31 


08 


09 


2N37O0JTXV 


1-32 


12 


02 


2N3249 


2-2 


64 


18 


2N3501JTXV 


1-31 


08 


09 


2N3702 


2-13 


63 


74 


2N3250 


2-1 1 


69 


02 


2N3502 


2-12 


63 


04 


2N3703 


2-13 


63 


74 


2N3250A 


2-1 1 


69 


02 


2N3503 


2-12 


63 


04 


2N3704 


1-20 


13 


74 


2N3250AJ 


2-12 


69 


02 


2N3504 


2-12 


63 


02 


2N3705 


1-20 


13 


74 


2N3250AJTX 


2-12 


69 


02 


2N3505 


2-12 


63 


02 


2N3706 


1-20 


13 


74 


2N3250AJTXV 


2-12 


69 


02 


2N3545 


2-3 


64 


18 


2N3707 


1-12 


07 


74 


2N3251 


2-12 


69 


02 


2N3546 


2-3 


64 


18 


2N3708 


1-12 


07 


74 


2N3251A 


2-12 


69 


02 


2N3547 


2-6 


62 


02 


2N3709 


1-12 


07 


74 


2N3251 AJ 


2-12 


69 


02 


2N3548 


2-6 


62 


02 


2N3710 


1-12 


07 


74 


2N3251AJTX 


2-12 


69 


02 


2N3549 


2-6 


62 


02 


2N371 1 


1-12 


07 


74 


2N3251 AJTXV 


2-12 


69 


02 


2N3550 


2-6 


62 


02 


2N3721 


1 20 


27 


74 


2N3252 


1-2 


25 


17 


2N3563 


1-7 


43 


72 


2N3724 


1-3 


25 


17 


2N3253 


1-3 


25 


17 


2N3564 


1-7 


43 


72 


2N3724A 


1-3 


25 


17 


2N3299 


1-18 


20 


04 


2N3565 


1-12 


07 


72 


2N3725 


1-3 


25 


17 


2N3300 


1-18 


20 


04 


2N3566 


1-31 


14 


72 










2N3301 


1-18 


20 


02 


2N3567 


1-31 


14 


72 











10 



9M179R A 
ZIMO / Z DM 


1 A 


25 


1 7 


ZINHUZO 


2-36 


62 




/\\\LLU I If 1 








2N3726 


2-33 


62 


30 


2N4024 


2-36 


62 


30 


2N4401 


1-21 


13 


72 


2N3727 


2-33 


62 


30 


2N4025 


2-36 


62 


30 


2N4402 


2-14 


63 


72 


2N3742 


1 19 


dR 


10 


9Mdmn 

Z IM4UJU 


2-20 


67 


10 


9Nd4m 

ZlN*t*+UO 


2-14 


63 


72 


illMO I SO 


■J _2Q 


13 


74 


9IMAnii 

Z 1 'JtuJ 1 


2-20 


67 


10 


2 N 4409 


1-13 


07 


72 


2N3794 


1 9n 

1 -ZU 


13 


74 


2N4032 


2-20 


67 


10 


Zl N'T** I U 


1-13 


07 


72 


9I\H7QQ 


2-6 


62 


02 


9Mdnii 


2-20 


67 


10 


2N4424 


1-26 


04 


74 


Z 1 1 JOUU 


2-34 


62 


08 


ZIM*»UOU 


2-20 


67 


10 


9W4Q1R 


2-14 


66 


72 


9[\i1Rnfi 


2-34 


62 


30 


2N4037 


2-20 


67 


10 


2N491 7 


2-14 


66 


72 


?r\HRn7 


2-34 


62 


30 


2N4047 


1 -4 


25 


17 


2N4918 


2-26 


3C 


38 


IVwOUO 


2-34 


oz 


30 


9WdnRR 


2-7 


62 


74 


2N4919 


2-26 


3C 


?R 
oo 


9N1RnQ 
ZIMOOUd 


9 Id 


R9 


ou 


9NdnRQ 

Z IV+UOcf 


2-7 


62 


74 


9N4Q90 

Zl M'+OZU 


2-26 


O^j 


Ifl 
oo 


Z iMjO 1 U 


9 Id 
Z-Ot 


R9 
Oz 


ou 


9Ndnfi1 
ZIMHUO 1 


2-7 


62 


74 


2N4921 


1-40 


or 


1R 
OO 


9NiRin i 

Z fMOO 1 UJ 


2-34 


R9 
OZ 


ou 


2N4062 


2-7 


62 


74 


2N4922 


1-40 


2C 


1R 
OO 




2-34 


62 


ou 


2N4121 


2-13 

Z IO 


66 


72 


2N4923 


1 -40 


2C 


38 


Z 1 OO 1 UJ 1 /\ V 


9-^4 


62 


ou 


2N4122 


2-13 


66 


72 


2N4924 


1-32 


12 


10 


9NHRinA 
Z IMOO 1 Un 


9 1R 
z-oo 


R9 
oz 


30 


2N41 23 


1-21 


23 


79 


2N4926 


1-32 


48 


10 


9M-JQ1 1 


9 1R 
Z"OD 


R9 
Oz 


in 
ou 


2IM41 24 


1-21 


23 


72 


2N4927 


1 -32 


dR 

HO 


P u 


9M1R1 1 1 


z-oo 


62 


30 


2N4125 


2-13 


66 


72 


2N4944 


1-26 


19 


72 


9KHR1 1 ITV 

Z IMOO M J 1 A 


2-35 


62 


30 


Z 1 "4*t 1 ZU 


2-13 

Z IO 


66 


72 


2N4945 


1-26 


19 


72 


Z IMOO 1 IJ 1 A V 


9 ?R 

Z-OD 


fi9 
Oz 


in 

ou 


2N4134 


1-7 


44 


25 


2N4946 


1-26 


19 


72 


9M"3fi1 1 A 


2-35 


62 


30 


2N4140 


1-21 


19 


72 


2N4951 


1-26 


13 


74 




1 7 


dT 
*tO 


7d 


2N4141 


1-21 


19 


72 


2N4952 


1 -26 

1 zu 


13 


74 


2N3827 


1-20 


27 


74 


2N4142 


2 13 


63 


72 


2N4953 


1-26 


13 


74 


9M1RRR 


1 90 
i -zu 


97 
Z / 


7d 


2N4143 


9-1? 

Z 1 o 


63 


72 


2N4954 


1-26 


13 


74 


9N1RRRA 


1-12 


07 


74 


2N4208 


2-3 


65 


18 


2N4964 


2-8 


62 


72 


9N1RRQ 


1 -20 


27 


74 


2N4209 


2-3 


65 


18 




2-8 


62 


72 




1 19 
1 - 1 z 


f17 
U/ 


7d 


2N4234 


2-20 


67 


10 


9M4Qfifi 


1-13 


07 


79 

/ z 


9f\11Rfin 
Z l<J OOOU 


1 9n 

I -zu 


97 
Z/ 


74 


2N4235 


2-20 


67 


10 


2N4967 


1-13 


07 


72 


2N3877 


119 
t - 1 Z 


07 


74 


2N4236 


2-20 


67 


10 


^ l >J *-t C7UO 


1 -13 


07 


72 


9NRR77A 

/..MOO / / rA 


1-13 


07 


74 


2N4237 


1 -32 


14 


10 




1 -26 


19 


72 




1-13 


07 


74 


2N4248 


2-7 


62 


72 


2N4970 


1 -26 


1 9 


72 


9M1QnnA 
ZIM J3UUM 


1-13 


07 


74 


9M49dQ 


2-7 


62 


72 


2N497 1 


2-14 


63 


72 


9N1Qni 
Zlv.OyU 1 


1 1 1 
i - 1 o 


H7 
u / 


7d 


9Wd9Rn 
zl\*+ZOU 


2-7 


62 


72 


2N4972 


2-14 


63 


72 


9N1Qni 


1 9n 
i - zu 


91 
zo 


79 
/ Z 


9Md9RnA 
ZIMtZOUM 


2-7 


62 


72 


2N5022 


2-4 


70 


1 7 




1 9n 
i -zu 


91 
ZO 


70 
/ Z 


2N4252 


1-7 


42 


25 


Z IMOUZO 


2-4 


70 


1 7 


9MiqnR 


2-13 


66 


72 


2N4258 


2-3 


65 


72 


9MRnin 

<dl<IJUOU 


1-4 


21 


74 


9N1Qnfi 
Z 'M JaUD 


2-13 


Rfi 
OO 


72 


9N49RR A 


2-3 


65 


72 


Z IMJUJU 


2-4 


64 


1 R 


2N3907 


1 -53 


07 


30 


2N4259 


1-7 


42 


25 




2-4 


64 


1 8 


Z IM03U0 


1 R? 
1 "DO 


07 


OU 


2N4274 


1-4 


21 


72 


9WR0RR 

Z IMOUOU 


2-8 


62 


72 


9M9Q19 
Z IM090Z 


1 7 

1 - / 


d9 

iz 


9R 
ZO 


2N4275 


1-4 


21 


72 


9MRHR7 
ZIMOUO / 


9 R 
Z-o 


R9 

oz 


79 

/ z 


^ . J j _'Ov5 


1 -7 


d9 

'tZ 


9R 
ZD 


9M49RR 

Z NtcOU 


1-13 


07 


74 


Z InOUOo 


1-13 


n7 
u/ 


79 
/ Z 


9N1QdR 

Z 1 VOiJHO 


1 _32 


1 2 


10 


2N4287 


1-13 




74 


9|\iRnRQ 
z IM DUO? 


1-13 


07 


72 


ZIM J3HO 


1 -21 


23 


09 
UZ 


2N4288 


2-7 


62 


74 


2N51 27 


1 9R 
i -zo 


27 


79 

/ z 


9M1Qd7 
ZIM Oi."+ / 


1 -21 


23 


n9 

uz 


2M4289 


2-7 


62 


74 


2N51 28 


1 9R 
I -ZO 


1 Q 


79 

/ z 


9M*3Q«9 

Z1N J3 DZ 


2-6 


R9 

OZ 


09 
Uz 


2N4290 


2-13 


63 


74 


9MR1 9Q 

zi^o i zy 


1 9R 

I -zo 


1 Q 


79 
/ Z 


9N1QR? 

Z IM J3UO 


2-7 


62 


02 


2N4291 


2-14 


63 


74 


2M51 30 


1-7 


43 


79 
/ Z 


9N1Qfid 
z i "J oyo*+ 


2-7 


R9 
OZ 


n9 

UZ 


2N4292 


1 -7 


43 


74 


9 M R 1 1 1 
Z1V.O I O 1 


1 9fi 

I -zo 


97 

z / 


79 
/z 


ZIN J3UJ 


2-7 


62 


02 


2N4293 


1-7 


43 


74 


2N51 32 


1-26 


97 
z / 


79 
/ Z 


2N4013 


1 -4 


9R 

ZO 


n9 
uz 


2N4294 


1-4 


21 


74 


9MR1 11 

LtlJ 1 OO 


1-13 


07 


79 
/ Z 


9M4fl1d 

Z IMHU 1 


1 -d 


9R 
ZO 


n9 
uz 


2N4295 


1-4 


21 


74 


2N51 34 


1-4 


21 


79 
/ Z 


9Ndm R 

ZlNHU t D 


9 1R 
Z-OD 


R9 
Oz 


in 
ou 


2N4314 


2-20 


67 


10 


9MR1 1R 
Z IMD too 


1 9R 
t -ZO 


1 Q 

■ y 


79 
/ Z 


Z IMtVJ i U 


9 1R 
Z-OD 


R9 
Oz 


in 
ou 


2N4354 


2-20 


67 


72 


9MR1 1R 

Z iM >J 1 OU 


1 -26 


1 g 


72 


9Md.ni 7 


9 1R 

z-oo 


R9 
Oz 


in 
ou 


2N4355 


2-20 


67 


72 


2N51 37 


1 -27 


19 


72 


9Md.ni r 

ZIMHU 1 O 


9 Ifi 
Z-OO 


R9 
Oz 


in 
ou 




2-21 


67 


72 


Z 1 VJ 1 OO 


2-14 


66 


72 


2N4019 


9 Ifi 
Z-OO 


RO 
Oz 


in 


2N4384 


1-13 


07 


02 


9MR1 3Q 


2-14 


66 


72 


2N4020 


2-36 


62 


30 


2N4386 


1-13 


07 


02 


2N5140 


2-4 


65 


72 


2N4021 


2-36 


62 


30 










2N5142 


2 14 


63 


72 



11 



to 



to 
+■> 
k_ 

(0 
Q. 



(0 

■o 
c 

(0 



o 

to 

"to 
c 

CO 



Transistor Standard Parts List (continued) 



Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


2N5143 


2-14 


63 


72 


2N5817 


2-15 


63 


77 


2SC399 


4-2 


44 


25 


2N5172 


1-27 


04 


74 


2N5910 


2-4 


65 


72 


2SC454 


4-2 


27 


74 


2N5179 


1-7 


42 


25 


2N6034 


2-26 


3J 


38 


2SC458 


4-2 


27 


74 


2N5180 


1-7 


42 


25 


2N6035 


2-26 


3J 


38 


2SC460 


4-2 


27 


74 


2N5189 


1-4 


25 


17 


2N6036 


2-26 


3J 


38 


2SC461 


4-2 


27 


74 


2N5190 


1-40 


2E 


38 


2N6037 


1-42 


2J 


38 


2SC463 


4-2 


44 


25 


2N5191 


1-40 


2E 


38 


2N6038 


1-42 


2J 


38 


2SC464 


4-2 


42 


25 


2N5192 


1-41 


2E 


38 


2N6039 


1-42 


2J 


38 


2SC466 


4-2 


42 


25 


2N5193 


2-26 


3E 


38 


2N6098 


1-42 


4A 


37 


2SC495 


4-2 


14 


38 


2N5194 


2-26 


3E 


38 


2N6099 


1-42 


4A 


37 


2SC535 


4-2 


42 


74 


2N5195 


2-26 


3E 


38 


2N6100 


1-42 


4A 


37 


2SC536NP 


6-4 


04 


74 


2N5209 


1-14 


07 


72 


2N6101 


1-42 


4A 


37 


2SC562 


4-3 


45 


28 


2N5210 


1-14 


07 


72 


2N6102 


1 42 


4A 


37 


2SC563 


4-3 


47 


28 


2N5219 


1-27 


27 


72 


2N6103 


1-42 


4A 


37 


2SC644 


4-3 


04 


74 


2N5220 


1-27 


13 


72 


2N6106 


2-26 


5E(3E) 


37 


2SC682 


43 


44 


25 


2N5221 


2-14 


63 


72 


2N6107 


2-26 


5E(3E) 


37 


2SC683 


4-3 


44 


25 


2N5222 


1-7 


49 


71 


2N6108 


2-26 


5E(3E) 


37 


2SC684 


4-3 


42 


74 


2N5223 


1-27 


27 


72 


2N6109 


2-26 


5E(3E) 


37 


2SC717 


4-3 


43 


74 


2N5224 


1-5 


21 


72 


2N6110 


2-26 


5E(3E) 


37 


2SC733 


4-3 


04 


74 


2N5225 


1-27 


13 


72 


2N6111 


2-27 


5E(3E) 


37 


2SG735 


4-3 


19 


74 


2N5226 


2-14 


63 


72 


2N6121 


1-42 


4E(2E) 


37 


2SC761 


4-3 


41 


25 


2N5227 


2 8 


62 


72 


2N6122 


1-43 


4E(2E) 


37 


2SC762 


4-3 


41 


25 


2N5232 


1-14 


07 


74 


2N6123 


1-43 


4E(2E) 


37 


2SC784 


4-3 


42 


74 


2N5232A 


1-14 


07 


74 


2N6124 


2 27 


5E(3E) 


37 


2SC785 


4-3 


42 


74 


2 N 5293 


1-41 


4E(2E) 


37 


2N6125 


2-27 


5E(3E) 


37 


2SC828 


4-3 


04 


74 


2N5294 


1-41 


4E(2E) 


37 


2N6126 


2 27 


5E(3E) 


37 


2SC829 


4-3 


23 


74 


2N5295 


1-41 


4E(2E) 


37 


2N6129 


1-43 


4E(2E) 


37 


2SC947 


4-3 


41 


25 


2N5296 


1-41 


4E(2E) 


37 


2N6130 


1-43 


4E(2E) 


37 


2SC1047 


4-3 


42 


74 


2N5297 


1-41 


4E(2E) 


37 


2N6131 


1-43 


4E(2E) 


37 


2SC1117 


4-3 


41 


25 


2N5298 


1-41 


4E(2E) 


37 


2N6132 


2 27 


5E(3E) 


37 


2SC1205 


4-4 


27 


74 


2N5305 


1-50 


05 


74 


2N6133 


2-27 


5E(3E) 


37 


2SC1215 


4-4 


42 


74 


2N5306 


1-50 


05 


74 


2N6134 


2 27 


5E(3E) 


37 


2SC1306 


4-4 


35 


37 


2N5307 


1-50 


05 


74 


2N6288 


1-43 


4E(2E) 


37 


2SC1318 


4-4 


62 


74 


2N5308 


1-50 


05 


74 


2N6289 


1-43 


4E(2E) 


37 


2SC1335 


4-4 


04 


74 


2N5355 


2-14 


63 


74 


2N6290 


1-43 


4E(2E) 


37 


2SC1342 


4-4 


23 


74 


2N5365 


2 14 


63 


74 


2N6291 


1-43 


4E(2E) 


37 


2SC1344 


4-4 


04 


74 


2N5366 


2-15 


63 


74 


2N6292 


1-43 


4E(2E) 


37 


2SC1359 


4-4 


23 


74 


2N5400 


2-15 


74 


72 


2N6293 


1-43 


4E(2E) 


37 


2SC1678 


4-4 


35 


37 


2N5401 


2-15 


74 


72 


2N6386 


1-43 


2J 


37 


2SC1760 


4-4 


14 


35 


2N5490 


1-41 


4E(2E) 


37 


2N6486 


1-43 


4A 


37 


40235 


1-7 


42 


25 


2N5491 


1-41 


4E(2E) 


37 


2N6487 


1-43 


4A 


37 


40236 


1-7 


42 


25 


2N5492 


1-41 


4E(2E) 


37 


2N6488 


1-43 


4A 


37 


40237 


1-7 


42 


25 


2 N 5493 


1-41 


4E(2E) 


37 


2N6489 


227 


5A 


37 


40238 


1-8 


42 


25 


2N5494 


1-41 


4E(2E) 


37 


2N6490 


2-27 


5A 


37 


40239 


1-8 


42 


25 


2N5495 


1-41 


4E(2E) 


37 


2N6491 


2-27 


5A 


37 


40240 


1-8 


42 


25 


2 N 5496 


1-41 


4E(2E) 


37 


2N6554 


2-21 


78 


35 


40242 


1-8 


42 


25 


2N5497 


1-41 


4E(2E) 


37 


2N6555 


2 21 


78 


35 


40243 


1-8 


42 


25 


2N5550 


1-27 


16 


72 


2N6556 


2-21 


78 


35 


40244 


1-8 


42 


25 


2N5551 


1-27 


16 


72 


2SA719 


4-2 


63 


74 


40245 


1-8 


42 


25 


2N5655 


1-42 


36 


38 


2SA738 


4-2 


77 


38 


40246 


1-8 


42 


25 


2N5656 


1-42 


36 


38 


2SC313 


4-2 


42 


25 


40314 


1 33 


12 


10 


2N5657 


1-42 


36 


38 


2SC372 


4-2 


27 


74 


40319 


2-21 


67 


10 


2N5769 


1-5 


21 


72 


2SC380 


4-2 


23 


74 


40321 


1-33 


48 


10 


2N5770 


1-7 


43 


72 




4-2 


43 


74 


92PE37A 


1-33 


38 


90 


2N5771 


2-4 


65 


72 


2SC387 


4-2 


43 


74 


92PE37B 


1-33 


38 


90 


2N5772 


1-5 


22 


72 


2SC388 


4-2 


46 


74 


92PE37C 


1-33 


38 


90 


2N5816 


1-27 


13 


77 


2SC394 


4-2 


23 


74 


92PE77A 


2-21 


78 


90 










2SC398 


4-2 


44 


25 


92PE77B 


2 21 


78 


90 



12 



Transistor Standard Parts List (Continued) 



Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg 


92PE77C 


2-21 


78 


90 


BC169C 


3-4 


04 


74 


BC238B-92 


39 


04 


77 


92PE487 


1-33 


48 


90 


BC177 


3-4 


71 


02 


BC238C 92 


3-9 


04 


77 


92PE488 


1-33 


48 


90 


BC177A 


3-4 


71 


02 


BC239-92 


3-9 


04 


77 


92PE489 


1 33 


48 


90 


BC177B 


3-4 


71 


02 


BC239B-92 


3-9 


04 


77 


92PU01 


1-33 


37 


91 


BC177VI 


3-4 


71 


02 


BC239C-92 


39 


04 


77 


92PU01A 


1-33 


37 


91 


BC178 


3-4 


71 


02 


BC261A 


39 


71 


02 


92PU05 


1-34 


39 


91 


BC178A 


3-4 


71 


02 


BC261B 


3-10 


71 


02 


92PU06 


1-34 


39 


91 


BC178B 


3-4 


71 


02 


BC262A 


3-10 


71 


02 


92PU10 


1-34 


48 


91 


BC179 


3-4 


71 


02 


BC262B 


3-10 


71 


02 


92PU45 


1-50 


05 


91 


BC179A 


3-4 


71 


02 


BC263A 


3-10 


71 


02 


92PU45A 


1-50 


05 


91 


BC179B 


35 


71 


02 


BC263B 


3-10 


71 


02 


92PU51 


2-21 


77 


91 


BC182 


3-5 


04 


77 


BC307-92 


3-10 


71 


77 


92PU51A 


2-21 


77 


91 


BC182A 


3-5 


04 


77 


BC307A-92 


3-10 


71 


77 


92PU55 


2-21 


79 


91 


BC182B 


3-5 


04 


77 


BC307B-92 


3-10 


71 


77 


92PU56 


2 21 


79 


91 


BC182L 


3-5 


04 


74 


BC308-92 


3-10 


71 


77 


92PU57 


2-22 


79 


91 


BC182LA 


3-5 


04 


74 


BC308A-92 


3-10 


71 


77 


92PU100 


1-34 


39 


91 


BC182LB 


3-5 


04 


74 


BC308B-92 


3-11 


71 


77 


92PU200 


222 


79 


91 


BC183 


3-5 


04 


77 


BC308C-92 


3-11 


71 


77 


92PU391 


1-34 


48 


91 


BC183A 


3-5 


04 


77 


BC309-92 


3-11 


71 


77 


92PU392 


1-34 


48 


91 


BC183B 


3 5 


04 


77 


BC309B-92 


3-11 


71 


77 


92PU393 


1-34 


48 


91 


BC183C 


3-5 


04 


77 


BC309C-92 


3-11 


71 


77 


BC107 


3-2 


04 


02 


BC183L 


3-6 


04 


74 


BC317 


3-11 


04 


72 


BC107A 


3-2 


04 


02 


BC183LA 


3-6 


04 


74 


BC317A 


3-11 


04 


72 


BC107B 


3-2 


04 


02 


BC183LB 


3-6 


04 


74 


BC317B 


3-11 


04 


72 


BC108 


3-2 


04 


02 


BC183LC 


3-6 


04 


74 


BC318 


3-11 


04 


72 


BC108A 


3-2 


04 


02 


BC184 


3-6 


04 


77 


BC318A 


3-11 


04 


72 


BC108B 


32 


04 


02 


BC184B 


36 


04 


77 


BC318B 


3-12 


04 


72 


BC108C 


3-2 


04 


02 


BC184C 


3-6 


04 


77 


BC318C 


3-12 


04 


72 


BC109 


3-2 


04 


02 


BC184L 


3-6 


04 


74 


BC319 


3-12 


04 


72 


BC109B 


3-2 


04 


02 


BC184LB 


3-6 


04 


74 


BC319B 


3-12 


04 


72 


BC109C 


32 


04 


02 


BC184LC 


3-6 


04 


74 


BC319C 


3-12 


04 


72 


BC140 


3 2 


14 


10 


BC212 


3-6 


63 


77 


BC327 


3-12 


67 


77 


BC140-6 


32 


14 


10 


BC212A 


3-6 


63 


77 


BC327-10 


3-12 


67 


77 


BC140-10 


3-2 


14 


10 


BC212B 


3-6 


63 


77 


BC327-16 


3-12 


67 


77 


BC140-16 


32 


14 


10 


BC212L 


3-7 


63 


74 


BC327-25 


3-12 


67 


77 


BC141 


3-2 


14 


10 


BC212LA 


3-7 


63 


74 


BC328 


3-12 


67 


77 


BC141-6 


3-2 


14 


10 


BC212LB 


3-7 


63 


74 


BC328-10 


3-12 


67 


77 


BC141-10 


32 


14 


10 


BC213 


3-7 


63 


77 


BC328-16 


3-12 


67 


77 


BC143 


3-2 


63 


03 


BC213A 


3-7 


63 


77 


BC328-25 


3-12 


67 


77 


BC146-1 


33 


04 


74 


BC213B 


3-7 


63 


77 


BC337 


3-12 


14 


77 


BC160 


3-3 


67 


10 


BC213C 


3-7 


63 


77 


BC337-10 


3-12 


14 


77 


BC160-6 


3-3 


67 


10 


BC213L 


3-7 


63 


74 


BC337-16 


3-12 


14 


77 


BC160-10 


3-3 


67 


10 


BC213LA 


3-7 


63 


74 


BC337-25 


3-12 


14 


77 


BC160-16 


33 


67 


10 


BC213LB 


3-7 


63 


74 


BC338 


3-13 


14 


77 


BC161 


3-3 


67 


10 


BC213LC 


3-8 


63 


74 


BC338-10 


3-13 


14 


77 


BC161-6 


3-3 


67 


10 


BC214 


3-8 


63 


77 


BC338-16 


3-13 


14 


77 


BC161-10 


33 


67 


10 


BC214A 


3-8 


63 


77 


BC338-25 


3-13 


14 


77 


BC161-16 


3-3 


67 


10 


BC214B 


38 


63 


77 


BC485 


3-13 


14 


77 


BC167 


3-3 


04 


74 


BC214C 


3-8 


63 


77 


BC485A 


3-13 


14 


77 


BC167A 


3-3 


04 


74 


BC214L 


38 


63 


74 


BC485B 


3-13 


14 


77 


BC167B 


3-3 


04 


74 


BC214LB 


3-8 


63 


74 


BC485L 


3-13 


14 


77 


BC168 


3-3 


04 


74 


BC214LC 


3-8 


63 


74 


BC547 


3-13 


04 


77 


BC168A 


3-3 


04 


74 


BC237-92 


3-8 


04 


77 


BC547A 


3-13 


04 


77 


BC168B 


3-3 


04 


74 


BC237A-92 


3-8 


04 


77 


BC547B 


3-13 


04 


77 


BC168C 


3-4 


04 


74 


BC237B-92 


3-8 


04 


77 


BC547C 


3-13 


04 


77 


BC169 


34 


04 


74 


BC238-92 


3-9 


04 


77 


BC548 


3-14 


04 


77 


BC169B 


3-4 


04 


74 


BC238A-92 


3-9 


04 


77 


BC548A 
BC548B 


3-14 
3-14 


04 
04 


77 
77 



0) 
3 

(/> 

55' 
o 

(/> 
f» 

0) 
3 
Q. 
0) 



5T 



c/> 



13 



CO 



CO 

r 

CO 



(0 

■o 
c 

(0 

o 

♦J 

(0 

"55 
c 

(0 



Transistor Standard Parts List 



(Continued) 



Device 


Page 


Process 


rKg. 


Device 


Page 


Process 


rKg. 


Device 


Page 


Process 


Pkg. 


BC548C 


3-14 


04 


77 


BD240B 


3-18 


5F(3C) 


37 


BD373A-25 


3 21 


37 


90 


BC549 


3-14 


04 


77 


BD240C 


3-18 


5F(3C) 


37 


BD373B 


3-22 


38 


90 


BC549B 


3-14 


04 


77 


BD241 


3-18 


4F(2C) 


37 


BD373B-10 


3-22 


38 


90 


BC549C 


3-14 


04 


77 


BD241A 


3-18 


4F(2C) 


37 


BD373B-16 


3-22 


38 


90 


BC550 


3-14 


04 


77 


BD241B 


3-18 


4F(2C) 


37 


BD373B-25 


3-22 


38 


90 


BC550B 


3-14 


04 


77 


BD241C 


3-18 


4F(2Ci 


37 


BD373C 


3-22 


38 


90 


BC550C 


3-14 


04 


77 


BD242 


3-18 


5E(3E) 


37 


BD373C-6 


3-22 


38 


90 


BC557 


3-14 


71 


77 


BD242A 


3-18 


5E(3E) 


37 


BD373C-10 


3-22 


38 


90 


BC557A 


3-14 


71 f 


77 


BD242B 


3-19 


5E(3E) 


37 


BD373C-16 


3-22 


38 


90 


BC557B 


3-14 


71 


77 


BD242C 


3-19 


5E(3E) 


37 


BD373D 


322 


39 


90 


BC558 


3-15 


71 


77 


BD370A 


3-19 


78 


91 


BD373D-6 


3-22 


39 


90 


BC558A 


3-15 


71 


77 


BD370A-10 


3-19 


78 


91 


BD373D-10 


3-22 


39 


90 


BC558B 


3-15 


71 


77 


BD370A-16 


3-19 


78 


91 


BD375 


3-22 


38 


38 


BC558C 


3-15 


71 


77 


BD370A-25 


3-19 


78 


91 


BD375-6 


3-22 


38 


38 


BC559 


3-15 


71 


77 


BD370B 


3-19 


78 


91 


BD375-10 


3-22 


38 


38 


BC559A 


3-15 


71 


77 


BD370B-10 


3-19 


78 


91 


BD375-16 


3-22 


38 


38 


BC559B 


3-15 


71 


77 


BD370B-16 


3-19 


78 


91 


BD375-25 


322 


38 


38 


BC559C 


3-15 


71 


77 


BD370B-25 


3-19 


78 


91 


BD376 


3-22 


78 


38 


BC560 


3-15 


71 


77 


BD370C 


3-19 


78 


91 


BD376-6 


3-22 


78 


38 


BC560A 


3-15 


71 


77 


BD370C-6 


3-19 


78 


91 


BD376-10 


3-22 


78 


38 


BC560B 


3-15 


71 


77 


BD370C-10 


3-19 


78 


91 


BD376-16 


3-23 


78 


38 


BC560C 


3-16 


71 


77 


BD370C-16 


3-19 


78 


91 


BD376-25 


3-23 


78 


38 


BCY56 


3-16 


04 


02 


BD370D 


3-19 


79 


91 


BD377 


3-23 


38 


38 


BCY57 


3-16 


04 


02 


BD370D-6 


3-19 


79 


91 


BD377-6 


3-23 


38 


38 


BCY58 


3-16 


04 


02 


BD370D-10 


3-20 


79 


91 


BD377-10 


3-23 


38 


38 


BCY58-7 


3-16 


04 


02 


BD371A 


3-20 


37 


91 


BD377-16 


3-23 


38 


38 


BCY58-8 


3-16 


04 


02 


BD371A-10 


3-20 


37 


91 


BD377-25 


3-23 


38 


38 


BCY58-9 


3 16 


04 


02 


BD371A-16 


3-20 


37 


91 


BD378 


3-23 


78 


38 


BCY58-10 


3-16 


04 


02 


BD371A-25 


3-20 


37 


91 


BD378-6 


3-23 


78 


38 


BCY59 


3-16 


04 


02 


BD371B 


3-20 


38 


91 


BD378-10 


3-23 


78 


38 


BCY59-7 


3-16 


04 


02 


BD371B-10 


3-20 


38 


91 


BD378-16 


3-23 


78 


38 


BCY59-8 


3-16 


04 


02 


BD371B-16 


3-20 


38 


91 


BD 37 8-25 


3-23 


78 


38 


BCY59-9 


3-16 


04 


02 


BD371B-25 


3-20 


38 


91 


BD379 


3-23 


39 


38 


8CY59-10 


3-16 


04 


02 


BD371C 


3-20 


38 


91 


BD379-6 


3-23 


39 


38 


BCY70 


3-17 


71 


02 


BD371C-6 


3-20 


38 


91 


BD379-10 


3-23 


39 


38 


BCY71 


3-17 


71 


02 


BD371C-10 


3-20 


38 


91 


BD379-16 


3-23 


39 


38 


BCY71A 


3-17 


71 


02 


BD371C-16 


3-20 


38 


91 


BD379-25 


3-24 


39 


38 


BCY72 


3-17 


71 


02 


BD371D 


3-20 


39 


91 


BO380 


3-24 


79 


38 


BD135 


3-17 


37 


38 


BD371D-6 


3-20 


39 


91 


BD380-6 


3-24 


79 


38 


BD136 


3-17 


77 


38 


BD371D-10 


3-20 


39 


91 


BD380-10 


3-24 


79 


38 


BD137 


3-17 


38 


38 


BD372A 


3-20 


78 


90 


BD380 16 


3-24 


79 


38 


BD138 


3-17 


78 


38 


BD372A-10 


3-20 


78 


90 


BD 380-25 


3-24 


79 


38 


BD139 


3-17 


39 


38 


BD372A-16 


3-20 


78 


90 


BD433 


3-24 


2E 


38 


BD140 


3-17 


79 


38 


BD372A-25 


3-21 


78 


90 


BD434 


3-24 


3E 


38 


BD201 


3-17 


4A 


37 


BD372B 


3-21 


78 


90 


BD435 


3-24 


2E 


38 


BD202 


3-17 


5A 


37 


BD372B-10 


3-21 


78 


90 


BD436 


3-24 


3E 


38 


BD233 


3-17 


2C 


37 


BD372B-16 


3-21 


78 


90 


BD437 


3-24 


2E 


38 


BD234 


3-18 


3C 


38 


BD372B-25 


3-21 


78 


90 


BD438 


3-24 


3E 


38 


BD235 


3-18 


2C 


38 


BD372C 


3-21 


78 


90 


BD439 


3-24 


2E 


38 


BD236 


3-18 


3C 


38 


8D372C-6 


3-21 


78 


90 


BD440 


3-24 


3E 


38 


BD237 


3-18 


2C 


38 


BD372C-10 


3-21 


78 


90 


BD441 


3-24 


2E 


38 


BD238 


3-18 


3C 


38 


BD372C-16 


3-2J 


78 


90 


BD442 


3-25 


3E 


38 


BD239 


3-18 


4F(2C) 


37 


BD372D 


3-21 


79 


90 


BD533 


3-25 


4E(2E) 


37 


BD239A 


3-18 


4F(2C) 


37 


BD372D-6 


3-21 


79 


90 


BD534 


3-25 


5E(3E) 


37 


BD239B 


3-18 


4F(2C) 


37 


BD372D-10 


3-21 


79 


90 


BD535 


3-25 


4E(2E) 


37 


BD239C 


3-18 


4F(2C) 


37 


BD373A 


3-21 


37 


90 


BD536 


3-25 


5E(3E) 


37 


BD240 


3-18 


5F(3C) 


37 


BD373A-10 


3-21 


37 


90 


BD537 


3-25 


4E(2E) 


37 


BD240A 


3-18 


5F(3C) 


37 


BD373A-16 


y-21 


37 


90 


BD538 


3-25 


5E(3E) 


37 



14 



Transistor Standard Parts List 



Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


BD633 


3-25 


4F(2C) 


37 


BFX86 


3-28 


14 


10 


D40D10 


1-34 


38 


35 


BD634 


3-25 


5FI3CI 


37 


BFX87 


3-29 


63 


04 


D40D11 


1-34 


38 


35 


BD635 


3-25 


4F(2C) 


37 


BFX88 


3-29 


63 


04 


D40D13 


1-34 


38 


35 


BD636 


3-25 


5F(3C) 


37 


BFY72 


3-29 


20 


04 


D40D14 


1-35 


38 


35 


BD637 


3-25 


4F(2C) 


37 


BFY76 


3-29 


07 


02 


D40E1 


1-35 


38 


35 


BD638 


3-25 


5F(3C) 


37 


BSX21 


3-29 


07 


02 


D40E5 


1-35 


38 


35 


BD675 


3-26 


2J 


38 


BSX45-6 


3-29 


14 


10 


D40E7 


1-35 


38 


35 


BD675A 


326 


2J 


38 


BSX45-10 


3-29 


14 


10 


D40N1 


1-35 


48 


35 


BD676 


326 


3J 


38 


BSX45-16 


3-29 


14 


10 


D40N2 


1-35 


48 


35 


BD676A 


3-26 


3J 


38 


BSX46-6 


3-29 


14 


10 


D40N3 


1-35 


48 


35 


BD677 


3-26 


2J 


38 


BSX46-10 


3-29 


14 


10 


D40N4 


1-35 


48 


35 


BD677A 


3-26 


2J 


38 


BSX46-16 


3-29 


14 


10 


D40N5 


1-35 


48 


35 


BD678 


3-26 


3J 


38 


BSX48 


3-29 


20 


02 


D41D1 


2-22 


78 


35 


BD678A 


3-26 


3J 


38 


BSX88 


3-29 


21 


18 


D41D2 


2-22 


78 


35 


BD679 


3 26 


2J 


38 


BSY38 


3-30 


21 


18 


D41D4 


2-22 


78 


35 


BD679A 


3-26 


2J 


38 


BSY39 


3-30 


21 


18 


D41D5 


222 


78 


35 


BD680 


3-26 


3J 


38 


BSY51 


3-30 


20 


04 


D41D7 


2-22 


78 


35 


BD680A 


3-26 


3J 


38 


BSY52 


3-30 


20 


04 


D41D8 


2-22 


78 


35 


BD681 


3-26 


2J 


38 


BSY53 


3-30 


20 


04 


D41D10 


2-22 


78 


35 


BD682 


3-26 


3J 


38 


BSY54 


3-30 


20 


04 


D41D11 


2-22 


78 


35 


BD733 


3-26 


4F(2C) 


37 


BSY95A 


3 30 


21 


02 


D41D13 


2-22 


78 


35 


BD734 


3-26 


5E(3E) 


37 


CS901 1 


4-4 


27 


72 


D41D14 


2-22 


78 


35 


BD735 


3-26 


4F(2C) 


37 


CS9012 


4-4 


60 


72 


D41E1 


2-22 


78 


35 


BD736 


3-26 


5E(3E) 


37 


CS9013 


4-4 


09 


72 


D41E5 


2-22 


78 


35 


BD737 


3-26 


4F(2C) 


37 


CS9014 


4-4 


04 


72 


D41E7 


2-22 


78 


35 


BD738 


3-26 


5E(3E) 


37 


CS9015 


4-4 


71 


72 


D42C1 


1-35 


37 


36 


BF167 


3-26 


45 


28 


CS9016 


4-4 


44 


72 


D42C2 


1-35 


37 


36 


BF180 


3-26 


41 


25 


CS9018 


4-4 


43 


72 


D42C3 


1-35 


37 


36 


BF181 


3-26 


41 


25 


DH3467CD 


2-4 


70 


40 


D42C4 


1-35 


37 


36 


BF182 


3-26 


41 


25 


DH3467CN 


2-4 


70 


39 


D42C5 


1-35 


37 


36 


BF194 


3-26 


46 


78 


DH3468CD 


2-4 


70 


40 


D42C6 


1-35 


37 


36 


BF195 


3-27 


46 


78 


DH3468CN 


2-4 


70 


39 


D42C7 


1-36 


38 


36 


BF196 


3-27 


45 


78 


DH3724CD 


1-5 


25 


40 


D42C8 


1-36 


38 


36 


BF197 


3-27 


47 


78 


DH3724CN 


1-5 


25 


39 


D42C9 


1-36 


38 


36 


BF198 


3-27 


45 


78 


DH3725CD 


1-5 


25 


40 


D42C10 


1-36 


38 


36 


BF199 


3-27 


47 


78 


DH3725CN 


1-5 


25 


39 


D42C1 1 


1-36 


38 


36 


BF200 


3-27 


41 


25 


D40C1 


1-50 


05 


35 


D42C12 


1-36 


38 


36 


BF233-2 


3-27 


49 


71 


D40C2 


1-50 


05 


35 


D43C1 


2-22 


77 


36 


BF233-3 


3-27 


49 


71 


D40C3 


1-50 


05 


35 


D43C2 


2-22 


77 


36 


BF233-4 


3-27 


49 


71 


D40C4 


1-50 


05 


35 


D43C3 


2-22 


77 


36 


BF233-5 


3-27 


49 


71 


D40C5 


1-50 


05 


35 


D43C4 


2-22 


77 


36 


BF240 


3-27 


47 78 


D40C7 


1-50 


05 


35 


D43C5 


2-23 


77 


36 


BF241 


327 


47 


78 


D40C8 


1-50 


05 


35 


D43C6 


2-23 


77 


36 


BF254 


3-27 


46 


78 


D40D1 


1-34 


38 


35 


D43C7 


2-23 


78 


36 


BF255 


3-27 


46 


78 


D40D2 


1-34 


38 


35 


D43C8 


2-23 


78 


36 


BF257 


3-27 


48 


10 


D40D3 


1-34 


38 


35 


D43C9 


2-23 


78 


36 


BF258 


3-27 


48 


10 


D40D4 


1-34 


38 


35 


D43C10 


2-23 


78 


36 


BF259 


328 


48 


10 


D40D5 


1-34 


38 


35 


D43C11 


2-23 


78 


36 


BF457 


3-28 


48 


38 


D40D7 


1-34 


38 


35 


D43C12 


2-23 


78 


36 


BF458 


3-28 


48 


38 


D40D8 


1-34 


38 


35 


D44C1 


1-43 


4F(2C) 


37 


BF459 


3-28 


48 


38 










D44C2 


1-43 


4F(2C) 


37 


BFX13 


3-28 


66 


02 










D44C3 


1-44 


4E(2E) 


37 


BFX29 


3-28 


63 


04 










D44C4 


1-44 


4F(2C) 


37 


BFX30 


3-28 


63 


04 










D44C5 


1-44 




37 


BFX37 


3-28 


62 


02 










D44C6 


1-44 


4E(2E) 


37 


BFX65 


3-28 


62 


02 










D44C7 


1-44 


4F(2C) 


37 


BFX84 


3-28 


14 


10 










D44C8 


1-44 


4F(2C) 


37 


BFX85 


3-28 


14 


10 










D44C9 


1-44 


4EI2E) 


37 



0) 
3 

CO 

35" 
o 

(/> 

«■* 
0) 
D 

a 

0) 



u 

Q> 
—t 
#-»• 

CO 



CO 



15 



•o 

i- 

(0 

■o 
c 

CO 
*-> 

c/> 
2 

CO 

to 
c 

(0 



D44C12 


1-44 


4E(2E) 


37 


MJE721 


1-45 


38 


38 


MPS3644 


2-15 


63 


72 


D44H1 


1-44 


4A 


37 


MJE722 


1-45 


39 


38 


MPS3645 


2-15 


63 


72 


D44H2 


1-44 


4A 


37 


MJE800 


1-45 


2J 


38 


MPS3646 


1-5 


22 


72 


D44H4 


1-44 


4A 


37 


MJE801 


1-45 


2J 


38 


MPS3693 


1-24 


27 


72 


D44H5 


1-44 


4A 


37 


MJE802 


1-45 


2J 


38 


MPS3694 


1-24 


27 


72 


D44H7 


1-44 


4A 


37 


MJE803 


1-45 


2J 


38 


MPS3702 


2-15 


63 


72 


D44H8 


1-44 


4A 


37 


MPSA05 


1-36 


12 


72 


MPS3703 


2-15 


63 


72 


D44H10 


1-44 


4A 


37 


MPSA06 


1-36 


12 


72 


MPS3704 


1-24 


13 


72 


D44H11 


1-44 


4A 


37 


MPSA09 


1-14 


07 


72 


MPS3705 


1-24 


13 


72 


D45C1 


2-27 


5F(3C) 


37 


MPSA10 


1-23 


27 


72 


MPS3706 


1-24 


13 


72 


D45C2 


2-27 


5F(3C) 


37 


MPSA12 


1-50 


05 


72 


MPS3707 


1-14 


07 


72 


D45C3 


2-27 


5E(3E) 


37 


MPSA13 


1-50 


05 


72 


MPS3708 


1-14 


07 


72 


D45C4 


2-27 


5F(3C) 


37 


MPSA14 


1-50 


05 


72 


MPS3709 


1-14 


07 


72 


D45C5 


2-27 


5F(3C) 


37 


MPSA20 


1-23 


02 


72 


MPS3710 


1-14 


07 


72 


D45C6 


2-27 


5E(3E) 


37 


MPSA42 


1-36 


48 


72 


MPS3711 


1-14 


07 


72 


D45C7 


2-27 


5F(3C) 


37 


MPSA43 


1-36 


48 


72 


MPS3721 


1-24 


23 


72 


D45C8 


2-28 


5F(3C) 


37 


MPSA55 


2-23 


67 


72 


MPS3826 


1-24 


23 


72 


D45C9 


2-28 


5E(3E) 


37 


MPSA56 


2-23 


67 


72 


MPS3827 


1-24 


23 


72 


D45C10 


2-28 


5F(3C) 


37 


MPSA70 


2-8 


62 


72 


MPS4354 


2-23 


67 


72 


D45C11 


2-28 


5E(3E) 


37 


MPSH07 


1-8 


41 


75 


MPS4355 


2-23 


67 


72 


D45C12 


2-28 


5E(3E) 


37 


MPSH08 


1-8 


41 


75 


MPS4356 


2-23 


67 


72 


D45H1 


2-28 


5A 


37 


MPSH10 


1-8 


42 


71 


MPS5172 


1-24 


04 


72 


D45H2 


2-28 


5A 


37 


MPSH11 


1-8 


47 


76 


MPS6507 


1-9 


43 


72 


D45H4 


2-28 


5A 


37 


MPSH19 


1-8 


47 


76 


MPS6511 


1-9 


43 


72 


D45H5 


2-28 


5A 


37 


MPSH20 


1-8 


49 


71 


MPS6512 


1-24 


23 


72 


D45H7 


2-28 


5A 


37 


MPSH24 


1-8 


47 


76 


MPS6513 


1-24 


23 


72 


D45H8 


2-28 


5A 


37 


MPSH30 


1-8 


44 


71 


MPS6514 


1-24 


23 


72 


D45H10 


2-28 


5A 


37 


MPSH31 


1-8 


44 


71 


MPS6515 


1-25 


23 


72 


D45H11 


2-28 


5A 


37 


MPSH32 


1-8 


45 


76 


MPS6516 


2-15 


66 


72 


EN918 


1-8 


43 


72 


MPSH34 


1-8 


47 


76 


MPS6517 


2-15 


66 


72 


EN930 


1-14 


07 


72 


MPSH37 


1-8 


49 


71 


MPS6518 


2-15 


66 


72 


EN2222 


1-23 


19 


72 


MPSL01 


1-23 


16 


72 


MPS6520 


1-25 


04 


72 


EN2369A 


1-5 


21 


72 


MPSL51 


2-15 


14 


72 


MPS6521 


1-25 


04 


72 


EN2484 


1-14 


07 


72 


MPS706 


1-5 


21 


72 


MPS6522 


2-15 


66 


72 


EN2907 


2-15 


63 


72 


MPS834 


1-5 


21 


72 


MPS6523 


2-8 


62 


72 


MJE170 


2-28 


77 


38 


MPS2369 


1-5 


21 


72 


MPS6530 


1-25 


13 


72 


MJE171 


2-28 


78 


38 


MPS2711 


1-23 


23 


72 


MPS6531 


1-25 


13 


72 


MJE172 


2-28 


79 


38 


MPS2712 


1-23 


23 


72 


MPS6532 


1-25 


13 


72 


MJE180 


1-45 


37 


38 


MPS2713 


15 


21 


72 


MPS6533 


2-16 


63 


72 


MJE181 


1-45 


38 


38 


MPS2714 


1-5 


21 


72 


MPS6534 


2-16 


63 


72 


MJE182 


1-45 


39 


38 


MPS2716 


1-23 


23 


72 


MPS6535 


2-16 


63 


72 


MJE340 


1-45 


36 


38 


MPS2923 


1-23 


04 


72 


MPS6539 


1-9 


42 


71 


MJE341 


1-45 


36 


38 


MPS2924 


1-23 


04 


72 


MPS6540 


1-9 


49 


71 


MJE3439 


1-45 


36 


38 


MPS2925 


1-23 


04 


72 


MPS6541 


1-9 


43 


72 


MJE344 


1-45 


36 


38 


MPS2926 


1-23 


04 


72 


MPS6542 


1-9 


47 


76 


MJE3440 


1-45 


36 


38 


MPS3392 


1-23 


04 


72 


MPS6543 


1-9 


47 


76 


MJE370 


2-28 


3C 


38 


MPS3393 


1-24 


04 


72 


MPS6544 


1-9 


49 


71 


MJE371 


2-28 


3E 


38 


MPS3394 


1-24 


04 


72 


MPS6546 


1-9 


47 


76 


MJE520 


1-45 


2C 


38 


MPS3395 


1-24 


04 


72 


MPS6547 


1-9 


47 


76 


MJE521 


1-45 


2C 


38 


MPS3396 


1-24 


04 


72 


MPS6548 


1-9 


42 


71 


MJE700 


2-28 


3J 


38 


MPS3397 


1-24 


04 


72 


MPS6560 


1-36 


14 


72 


MJE701 


2-29 


3J 


38 


MPS3398 


1-24 


04 


72 


MPS6561 


1-36 


14 


72 


MJE702 


2-29 


3J 


38 


MPS3563 


1-9 


43 


72 


MPS6562 


2-23 


67 


72 


MJE703 


2-29 


3J 


38 


MPS3638 


2-15 


63 


72 


MPS6563 


2-23 


60 


72 


MJE710 


2-29 


77 


38 


MPS3638A 


2-15 


63 


72 


MPS6564 


1-25 


27 


72 


MJE711 


229 


78 


38 


MPS3639 


2-4 


65 


72 


MPS6565 


1-25 


27 


72 



16 



Transistor Standard Parts List (continued) 



Device 


Page 


Process 


Pkg. 


Device 


Page 


Proces 


t Pkg. 


Device 


Page 


Process 


Pkg. 


MPS6566 


1-25 


27 


72 


NB012E 


5-36 


04 


72 


NB221Y 


5-48 


63 


90 


MPS6567 


1-9 


49 


71 


NB012F 


5-36 


04 


74 


NB222E 


5-48 


63 


72 


MPS6568A 


1-9 


44 


71 


NB012H 


5-36 


04 


77 


NB222F 


5-48 


63 


74 


MPS6569 


1-9 


44 


71 


NB013E 


5-40 


04 


72 


NB222H 


5-48 


63 


77 


MPS6570 


1-9 


44 


71 


NB013F 


5-40 


04 


74 


NB222X 


5-48 


63 


91 


MPS6571 


1-14 


07 


72 


NB013H 


5-40 


04 


77 


NB222Y 


5-48 


63 


90 


MPS6573 


1-25 


02 


72 


NB014E 


5-40 


04 


72 


NB223E 


5-48 


63 


72 


MPS6574 


1-25 


02 


72 


NB014F 


5-40 


04 


74 


NB223F 


5-48 


63 


74 


MPS6575 


1 25 


02 


72 


NB014H 


5-40 


04 


77 


NB223H 


5-48 


63 


77 


MPS6576 


1-25 


02 


72 


NB021E 


5-36 


62 


72 


NB223X 


5-48 


63 


91 


MRF472 


1-45 


35 


38 


NB021F 


5-36 


62 


74 


NB223Y 


5-48 


63 


90 


MRF501 


1-9 


42 


25 


NB021H 


5-36 


62 


77 


NB311E 


5-52 


38 


72 


MRF502 


1-9 


42 


25 


NB022E 


5-36 


62 


72 


NB311F 


5-52 


38 


74 


MRF8004 


1-36 


35 


10 


NB022F 


5-36 


62 


74 


NB311H 


5-52 


38 


77 


NA01E 


5-4 


09 


72 


NB022H 


5-36 


62 


77 


NB311K 


5-52 


38 


35 


NA01F 


5-4 


09 


74 


NB023E 


5-40 


62 


72 


NB311M 


5-52 


38 


36 


NA01H 


5-4 


09 


77 


NB023F 


5-40 


62 


74 


NB311X 


5-52 


38 


91 


NA02E 


5-4 


60 


72 


NB023H 


5-40 


62 


77 


NB311Y 


5-52 


38 


90 


NA02F 


5-4 


60 


74 


NB024E 


5-40 


62 


72 


NB321E 


5-52 


38 


72 


NA02H 


54 


60 


77 


NB024F 


5-40 


62 


74 


NB312F 


5-52 


38 


74 


NA11E 


5-8 


09 


72 


NB024H 


5-40 


62 


77 


NB312H 


5-52 


38 


77 


NA11F 


5-8 


09 


74 


NB111E 


5-44 


04 


72 


NB312K 


5-52 


38 


35 


NA11H 


5-8 


09 


77 


NB111F 


5-44 


04 


74 


NB312M 


5-52 


38 


36 


NA12E 


5-8 


60 


72 


NB111H 


5-44 


04 


77 


NB312X 


5-52 


38 


91 


NA12F 


5-8 


60 


74 


NB112E 


5-44 


04 


72 


NB312Y 


5-52 


38 


90 


NA12H 


5-8 


60 


77 


NB112F 


5-44 


04 


74 


NB313E 


5-52 


38 


72 


NA22E 


5-12 


77 


72 


NB112H 


5-44 


04 


77 


NB313F 


5-52 


38 


74 


NA22F 


5-12 


77 


74 


NB113E 


5-44 


04 


72 


NB313H 


5-52 


38 


77 


NA22H 


5-12 


77 


77 


NB113F 


5-44 


04 


74 


NB313K 


5-52 


38 


35 


NA22X 


5-12 


77 


91 


NB113H 


5-44 


04 


77 


NB313M 


5-52 


38 


36 


NA22Y 


5-12 


77 


90 


NB121E 


5-44 


62 


72 


NB313X 


5-52 


38 


91 


NA31K 


5-16 


37 


35 


NB121F 


5-44 


62 


74 


NB313Y 


5-52 


38 


90 


NA31M 


5-16 


37 


36 


NB121H 


5-44 


62 


77 


NB321E 


5-52 


78 


72 


NA31X 


5-16 


37 


91 


NB122E 


5-44 


62 


72 


NB321F 


5-52 


78 


74 


NA31Y 


5-16 


37 


90 


NB122F 


5-44 


62 


74 


NB321H 


5-52 


78 


77 


NA32K 


5-16 


77 


35 


NB122H 




62 


77 


NB321K 


5-52 


78 


35 


NA32M 


5-16 


77 


36 


NB123E 


5-44 


62 


72 


NB321M 


5-52 


78 


36 


NA32X 


5-16 


77 


91 


NB123F 


544 


62 


74 


NB321X 


5-52 


78 


91 


NA32Y 


5-16 


77 


90 


NB123H 


5-44 


62 


77 


NB321Y 


5 52 


78 


90 


NA41U 


5-20 


37 


38 


NB211E 


5-48 


19 


72 


NB322E 


5-52 


78 


72 


NA41W 


5-20 


37 


37 


NB211F 


5-48 


19 


74 


NB322F 


5-52 


78 


74 


NA42U 


5-20 


77 


38 


NB211H 


5-48 


19 


77 


NB322H 


5-52 


78 


77 


NA42W 


5-20 


77 


37 


NB211X 


5-48 


19 


91 


NB322K 


5-52 


78 


35 


NA51U 


5-24 


2C 


38 


NB211Y 


5-48 


19 


90 


NB322M 


5-52 


78 


36 


NA51W 


5-24 


4F(2C) 


37 


NB212E 


5-48 


19 


72 


NB322X 


5-52 


78 


91 


NA52U 


5-24 


3C 


38 


NB212F 


5-48 


19 


74 


NB322Y 


5-52 


78 


90 


NA52W 


5-24 


5F(3C) 


37 


NB212H 


5-48 


19 


77 


NB323E 


5-52 


78 


72 


NA61U 


5-28 


2E 


38 


NB212X 


5-48 


19 


91 


NB323F 


5-52 


78 


74 


NA61W 


5-28 


4E(2E) 


37 


NB212Y 


5-48 


19 


90 


NB323H 


5-52 


78 


77 


NA62U 


5-28 


3E 


38 


NB213E 


548 


19 


72 


NB323K 


5-52 


78 


35 


NA62W 


5-28 


5E(3E) 


37 


NB213F 


5-48 


19 


74 


NB323M 


5-52 


78 


36 


NA71U 


5-32 


2E 


38 


NB213H 


5-48 


19 


77 


NB323X 


5-52 


78 


91 


NA71W 


5-32 


4E(2E) 


37 


NB213X 


5-48 


19 


91 


NB323Y 


5-52 


78 


90 


N A72U 


5-32 


Jt 


JO 


NB213Y 


5-48 


19 


90 


NCBJ14 


1-45 


14 


38 


NA72W 


5-32 


5E(3E) 


37 


NB221E 


5-48 


63 


72 


NCBJ35 


1-45 


35 


38 


NB011E 


5-36 


04 


72 


NB221F 


5-48 


63 


74 


NCBS14 


1-36 


14 


10 


NB011F 


5-36 


04 


74 


NB221H 


548 


63 


77 


NCBS35 


1-36 


35 


10 


NB011H 


5-36 


04 


77 


NB221X 


5-48 


63 


91 


NCBT13 


1-25 


13 


72 



17 



Transistor Standard Parts List (continued) 



Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


NCBV14 


1-36 


14 


35 


NSDU51 


2 24 


77 


35 


IMSP698A 


2-30 


5J(3J) 


37 


NCBW35 


1-45 


35 


37 


NSDU51A 


2-24 


77 


35 


NSP699 


1-46 


4J(2J) 


37 


NCBX14 


1-36 


14 


91 


NSDU52 


2-24 


77 


35 


NSP699A 


1-46 


4J(2J) 


37 


NR041E 


5-68 


04 


72 


NSDU55 


2-24 


78 


35 


NSP700 


2-30 


5J(3J) 


37 


NR041F 


5-68 


04 


74 


NSDU56 


2-24 


79 


35 


NSP700A 


2-30 


5JI3J) 


37 


NR041H 


5-68 


04 


77 


NSDU57 


2-24 


79 


35 


NSP701 


1-46 


4J(2J) 


37 


NR421D 


5-56 


42 


71 


NSE170 


2-24 


77 


36 


NSP702 


2-30 


5J(3J) 


37 


NR421F 


5-56 


42 


74 


NSE171 


2-25 


78 


36 


NSP2010 


2-30 


5A 


37 


NR431E 


5-60 


43 


72 


NSE180 


1-38 


37 


36 


NSP2011 


2-30 


5A 


37 


NR431F 


5-60 


43 


74 


NSE181 


1-38 


38 


36 


NSP2020 


1-47 


4A 


37 


NR431H 


5-60 


43 


77 


NSE457 


1-39 


48 


36 


NSP2021 


1-47 


4A 


37 


NR461E 


5-64 


46 


72 


NSE458 


1-39 


48 


36 


NSP2090 


2-30 


5JC3J) 


37 


NR461F 


5-64 


46 


74 


NSE459 


1-39 


48 


36 


NSP2091 


2-30 


5J(3J) 


37 


NR461H 


5-64 


46 


77 


NSP41 


1-46 


4E(2E) 


37 


NSP2092 


2-30 


5J(3J) 


37 


NS3762 


2-5 


70 


17 


NSP41 A 


1-46 


4E(2E) 


37 


NSP2093 


2-30 


5J(3J) 


37 


NS3763 


2-5 


70 


17 


NSP41B 


1-46 


4E(2E) 


37 


NSP2100 


1-47 


4J(2J) 


37 


NS3903 


1-25 


23 


02 


NSP41C 


1-46 


4E(2E) 


37 


NSP2101 


1-47 


4JI2J) 


37 


NS3904 


1-26 


23 


02 


NSP42 


2-29 


5E(3E) 


37 


NSP2102 


1-47 


4J(2J) 


37 


NS3905 


2-16 


66 


02 


NSP42A 


2-29 


5E(3E) 


37 


NSP2103 


1-47 


4J(2J) 


37 


NS3906 


2-16 


66 


02 


NSP42B 


2-29 


5E(3E) 


37 


NSP2370 


2-30 


5F(3C) 


37 


NSC460 


1-9 


46 


74 


NSP42C 


2-29 


5E(3E) 


37 


NSP2480 


1-47 


4A 


37 


NSC461 


1-9 


46 


74 


NSP105 


2-29 


5A 


37 


NSP2481 


1-47 


4A 


37 


NSD102 


1-36 


37 


35 


NSP205 


1-46 


4A 


37 


NSP2482 


1-47 


4A 


37 


NSD103 


1-37 


37 


35 


NSP370 


2-29 


5F(3C) 


37 


NSP2483 


1-47 


4A 


37 


NSD104 


1-37 


39 


35 


NSP371 


2-29 


5F(3C) 


37 


NSP2490 


2-30 


5E(3E) 


37 


NSD105 


1-37 


39 


35 


NSP520 


1-46 


4F(2C) 


37 


NSP2491 


2-30 


5E(3E) 


37 


NSD106 


1-37 


39 


35 


NSP521 


1-46 


4F(2C) 


37 


NSP2520 


1-47 


4F(2C) 


37 


NSD123 


1-37 


08 


35 


NSP575 


1-46 


4F(2C) 


37 


NSP2955 


2-30 


5A 


37 


NSD131 


1-37 


48 


35 


NSP576 


2-29 


5F(3C) 


37 


NSP3054 


1-47 


4E(2E) 


37 


NSD132 


1-37 


48 


35 


NSP577 


1-46 


4F(2C) 


37 


NSP3055 


1-47 


4A 


37 


NSD133 


1-37 


48 


35 


NSP578 


2 29 


5F(3C) 


37 


NSP3740 


2-30 


5F(3C) 


37 


NSD134 


1-37 


48 


35 


NSP579 


1-46 


4F(2C) 


37 


NSP3741 


2-30 


5F(3C) 


37 


NSD135 


1-37 


48 


35 


NSP580 


2-29 


5F(3C) 


37 


NSP4918 


2-31 


5F(3C) 


37 


NSD202 


2-23 


77 


35 


NSP581 


1-46 


4F(2C) 


37 


NSP4919 


2-31 


5F(3C) 


37 


NSD203 


2-24 


77 


35 


NSP582 


2-29 


5F(3C) 


37 


NSP4920 


2-31 


5F(3C| 


37 


NSD204 


2-24 


79 


35 


NSP585 


1-46 


4E(2E) 


37 


NSP4921 


1-47 


4F(2C) 


37 


NSD205 


2-24 


79 


35 


NSP586 


2-29 


5E(3E) 


37 


NSP4922 


1-47 


4F(2C) 


37 


NSD206 


2-24 


79 


35 


NSP587 


1-46 


4E(2E) 


37 


NSP4923 


1-47 


4F(2C) 


37 


NSD457 


1-37 


48 


35 


MSP588 


2-29 


5E(3E) 


37 


NSP5190 


1-47 


4E(2E) 


37 


NSD458 


1-38 


48 


35 




1-46 


4E(2E) 


37 


NSP5191 


1-47 


4E(2E) 


37 


NSD459 


1-37 


48 


35 


NSP590 


2-29 


5E(3E) 


37 


NSP5192 


1-48 


4E(2E) 


37 


NSD3439 


1-38 


36 


35 


i \i or jaj 


1-46 


4EI2EI 


37 


NSP5193 


2-31 


5E(3E) 


37 


NSD3440 


1-38 


36 


35 


i m or jju 


2-29 


5E(3E) 


37 


NSP5194 


2-31 


5E(3E) 


37 


NSD6178 


1-38 


38 


35 


(vicpcQ7 
l>IOr Jo / 


1-46 


4E(2E) 


37 


NSP5195 


2-31 


5E(3E) 


37 


NSD6179 


1-38 


38 


35 




2-29 


5E(3E) 


37 


NSP5974 


2-31 


5A 


37 


NSD6180 


2-24 


78 


35 




1-46 


4E(2E) 


37 


NSP5975 


2-31 


5A 


37 


NSD6181 


2-24 


78 


35 




2-30 


5E(3E) 


37 


NSP5976 


2-31 


5A 


37 


NSDU01 


1-38 


37 


35 


NSP601 


1-46 


4A 


37 


NSP5977 


1-48 


4A 


37 


NSDU01A 


1-38 


37 


35 


NSP602 


2-30 


5A 


37 


NSP5978 


1-48 


4A 


37 


NSDU02 


1-38 


37 


35 


NSP695 


1 46 


4J(2J) 


37 


NSP5979 


1-48 


4A 


37 


NSDU05 


1-38 


38 


35 


NSP695A 


1-46 


4J(2J) 


37 


NSP5980 


2-31 


5A 


37 


IMSDU06 


1-38 


39 


35 


NSP696A 


2-30 


5J(3J) 


37 


NSP5981 


2-31 


5A 


37 


NSDU07 


1-38 


39 


35 


NSP697 


1-46 


4J(2J) 


37 


NSP5982 


2-31 


5A 


37 


NSDU10 


1-38 


48 


35 


Menem A 

IMbrb9/ A 


1 -46 


4J(2J) 


37 


l\J or oyoo 


1-48 


4A 


37 










NSP698 


230 


5J(3J) 


37 


NSP5984 
NSP5985 
PE3100 
PE4010 


1-48 
1-48 
1-10 
1-14 


4A 
4A 
47 
07 


37 
37 
76 
72 



18 



Transistor Standard Parts List 



(Continued) 



Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


Device 


Page 


Process 


Pkg. 


PE5025 


1-10 


46 


72 


PN5129 


1-23 


19 


72 


TIP62B 


2-32 


5F(3CI 


37 


PE5029 


1-10 


47 


76 


PN5130 


1-10 


43 


72 


TIP62C 


2-32 


5F(3C) 


37 


PE5030B 


1-10 


47 


76 


PN5131 


1-23 


27 


72 


TIP110 


1-49 


4JI2J) 


37 


PE5031 


1-10 


47 


76 


PN5132 


1-23 


27 


72 


TIP111 


1-49 


4J(2J) 


37 


PN918 


1-10 


43 


72 


PN5133 


1-14 


07 


72 


TIP112 


1-49 


4J(2J) 


37 


PN930 


1-14 


07 


72 


PN5134 


1-6 


21 


72 


TIP115 


2-32 


5JI3JJ 


37 


PN2221 


1-21 


19 


72 


PN5135 


1-23 


19 


72 


TIP116 


232 


5J(3J) 


37 


PN2221A 


1-21 


19 


72 


PN5136 


1-23 


19 


72 


TIP117 


2-32 


5J(3J) 


37 


PN2222 


1 22 


19 


72 


PN5137 


1-23 


19 


72 


TIP120 


1-49 


4K 


37 


PN2222A 


1-22 


19 


72 


PN5138 


2-18 


66 


72 


TIP121 


1-49 


4K 


37 


PN2369 


1-5 


21 


72 


PN5139 


2-18 


66 


72 


TIP122 


1-49 


4K 


37 


PN2369A 


1-6 


21 


72 


PN5140 


2-5 


65 


72 


TIP125 


232 


5K 


37 


PN2484 


1-14 


07 


72 


PN5142 


2-18 


63 


72 


TIP126 


2-32 


5K 


37 


PN2906 


2-16 


63 


72 


PN5143 


2-18 


63 


72 


TIP127 


2-32 


5K 


37 


PN2906A 


2-16 


63 


72 


PN5179 


1-10 


42 


71 


TIP130 


1-49 


4K 


37 


PN2907 


2-16 


63 


72 


PN5910 


2-5 


65 


72 


TIP131 


1-49 


4K 


37 


PN2907A 


2-16 


63 


72 


PN7055 


1-39 


48 


72 


TIP132 


1-49 


4K 


37 


PN3563 


1-10 


43 


72 


SE5020 


1 10 


44 


25 


TIP135 


233 


5K 


37 


PN3564 


1-10 


43 


72 


SE5021 


1-10 


44 


25 


TIP136 


2-33 


5K 


37 


PN3565 


1-14 


07 


72 


SE5022 


1-10 


44 


25 


TIP137 


2-33 


5K 


37 


PN3566 


1-39 


14 


72 


SE5023 


1-10 


44 


25 


TIS86 


1-10 


47 


78 


PN3567 


1-39 


14 


72 


SE5024 


1-10 


44 


25 


TIS87 


1-10 


47 


78 


PN3568 


1-39 


12 


72 


SE5050 


1-10 


44 


25 


TN2102 


1-39 


12 


91 


PN3569 


1-39 


14 


72 


SE5051 


110 


44 


25 


TN2219 


1-27 


19 


91 


PN3638 


2 16 


63 


72 


SE5052 


1-10 


44 


25 


TN2219A 


1-27 


19 


91 


PN3638A 


2-17 


63 


72 


SE5055 


1-10 


45 


28 


TN2905 


2-18 


63 


91 


PN3639 


2-5 


65 


72 


SE7055 


1-39 


48 


10 


TN2905A 


2-18 


63 


91 


PN3640 


2-5 


65 


72 


SE7056 


1-39 


48 


10 


TN3019 


1-40 


12 


91 


PN3641 


1-22 


19 


72 


SV7056 


1-39 


48 


35 


TN3020 


1-40 


12 


91 


PN3642 


1-22 


19 


72 


TIP29 


1-48 


4F(2C) 


37 


TN3053 


1-40 


12 


91 


PN3643 


1-22 


19 


72 


TIP29A 


1-48 


4F(2C) 


37 


TN4036 


2-25 


67 


91 


PN3644 


2-17 


63 


72 


TIP29B 


1-48 


4F(2C) 


37 


TN4037 


2-25 


67 


91 


PN3645 


2-17 


63 


72 


TIP29C 


1-48 


4F(2C) 


37 










PN3646 


1-6 


22 


72 


TIP30 


2-31 


5F(3C) 


37 










PN3691 


1-22 


23 


72 


TIP30A 


2-31 


5F(3C) 


37 










PN3692 


1 22 


23 


72 


TIP30C 


2 32 


5F(3C] 


37 










PN3694 


1 22 


27 


72 


TIP31 


1-48 


4F(2C) 


37 










PN4121 


2-17 


66 


72 


TIP31A 


1-48 


4F(2C) 


37 










PN4122 


2-17 


66 


72 


TIP31B 


1-48 


4F(2C) 


37 










PN4140 


1-22 


19 


72 


TIP31C 


1-48 


4F(2C) 


37 










PN4141 


1-22 


19 


72 


TIP32 


2-32 


5FI3C) 


37 










PN4142 


2-17 


63 


72 


TIP32A 


2-32 


5F(3C) 


37 










PN4143 


2-17 


63 


72 


TIP32B 


2-32 


5F(3C) 


37 










PN4248 


2-8 


62 


72 


TIP32C 


2-32 


5F(3C) 


37 










PN4249 


2-8 


62 


72 


TIP41 


1-48 


4A 


37 










PN4250 


2-8 


62 


72 


TIP41A 


1-49 


4A 


37 










PN4250A 


2-8 


62 


72 


TIP41B 


1-49 


4A 


37 










PN4258 


2-5 


65 


72 


TIP41C 


1 49 


4A 


37 










PN4258A 


2-5 


65 


72 


TIP42 


232 


5A 


37 










PN4274 


16 


21 


72 


TIP42A 


232 


5A 


37 










PN4275 


16 


21 


72 


TIP42B 


2-32 


5A 


37 










PN4354 


2-25 


67 


72 


TIP42C 


232 


5A 


37 










PN4355 


2-25 


67 


72 


TIP61 


1-49 


4F(2C) 


37 










PN4356 


2-25 


67 


72 


TIP61A 


1-49 


4F(2C) 


37 










PN4916 


2-18 


66 


72 


TIP61B 


1-49 


4F(2C) 


37 










PN4917 


2-18 


66 


72 


TIP61C 


1-49 


4F(2C) 


37 










PN5127 


1 22 


27 


72 


TIP62 


2-32 


5F(3C) 


37 










PN5128 


1-22 


19 


72 


TIP62A 


232 


5F(3C) 


37 











0) 
3 

cs> 

if 

O 
—t 

Ui 
«■* 
0) 
3 

a 



■o 

V) 



FET Parts List 

















Process/ 


Selection 


Process 




Process/ 


Selection 


Process 


Device 


Package 


Guide 


Page 


Device 


Package 


Guide 


Page 


• 2N2608 


89/1 1 


O 1-1 
O- 1 Z 


Q 90 


0MA1 1RA 
Z I 1 OH 


53/25 


8-6 


9-9 


2N2609 


88/1 1 


Q 1 

o- 1 Z 


q on 


9M41 1 Q 

zwh \ i y 


DO/ ZD 


R R 

o-o 


9-9 


2N3069 


52/02 


8-6 


y- / 


OM^ 1 1 Q A 

zimh i i yrt 


CO /OP. 


Q R 

o-o 


Q Q 

y-y 


2N3070 


52/02 


Q R 

o-o 


Q 7 

y-/ 


OKMOOn 
ZIM4ZZU 


JO; 


R 7 
O / 


Q.I 1 

y- 1 i 


2N3329 


89/23 


Q 1 
O- I Z 


Q 90 

y-zz 


okm oon A 

ZIMhZZUM 


RR /OR 


R 7 


q 1 1 

y- 1 i 


2N3330 


89/23 


R 1*5 
O- I Z 


Q 99 


OM/1091 
ZWHZZ I 


RR/OR 
DO/ £0 


ft 7 
O- 1 


Q 11 

y- 1 i 


2N3331 


89/23 


O- l Z 


Q 99 
y-zZ 


9M/1991 A 

Z'N^zz i m 


RR/OR 
DO/ ZD 


R 7 

o- / 


Q 11 

y- 1 i 


2N3332 


89/23 


o- 1 Z 


Q 99 

y-zz 


OM/tOOO 


RK 'OR 
00/ ZO 


R 7 


Q 11 

y- 1 i 


2N3368 


52/02 


p r 


Q 7 


9M4999 A 
ZINf ^ ZZf\ 


RR/OR 
OO/ ZD 


R 7 
O- / 


Q 11 

y- 1 i 


2N3369 


52/02 


o-o 


Q 7 

y- / 


ONMOOQ 


Rn/OR 
OU/ ZD 


R <1 


Q o 
y-z 


om inn 

2N3370 


52/02 


O-O 


Q 7 

y- / 


OMdOOA 


Rn/OR 
DU/ZO 


R A 


Q.O 
y-z 


2IN3382 


88/23 


Q IT 

O- I Z 


q on 
y-zu 


ZIM't J JO 


Ro/no 


8-7 


9-7 


2N3384 


88/23 


Q I 1 ) 
0" I Z 


q on 
y-zu 


ZIM** Joy 


ro /no 


8-7 


9-7 


i m noc 

2N oJBd 


88/23 


O- I Z 


q on 

y-ZU 




RO/no 


R 7 
o- / 


Q.7 

y / 


IMOfl Iff 

2N3436 


55/02 


fl R 

o-o 


Q 1 1 
y- 1 i 




R9 /no 


R 7 
O / 


Q-7 

y / 


2N3437 


55/02 


O-O 


Q 11 

y- 1 i 


OMjIOQI 
ZN*i OO 1 


RO/t 1 

oy/ 1 i 


ft 1 
o- 1 z 


Q 00 

y-zz 


O IV 1 O jl o c\ 

2N3438 


55/02 


Q C 

o-O 


Q 11 

y- 1 i 


OM J0Q1 


ri /n9 

D I /UZ 


R 

o-z 


R 

y-o 


2N3458 


52/02 


q r 
o-o 


Q 7 

y / 


9M>1O,Q0 


51 /02 


fl 
o-z 


9-5 


2N3459 


52/02 


o-o 


Q 7 

y* / 


z i^jfoyj 


ri /n9 

D I /UZ 


R 

o-z 


Q R 

y-o 


2N3460 


52/02 


o-o 


Q 7 

y- / 




Rn/9R 
D\Ji ZD 


R d 


9-2 


2N3684 


52/25 


a a 
o-O 


Q 7 

y- / 


_ 9M/I/I 1CA 

• Zl^i^H 1 Ort 


Rn/9R 


R A 


9 

y-z 


2N3685 


52/25 


D fi 

o-o 


Q 7 

y- / 


- 9KMQC(! 

• ZNhoOO 


ki /n9 
b I /Uz 


ft 

o-z 


O R 

y-o 


2N3686 


52/25 


ft R 

o-o 


Q 7 

y-/ 


0M-4GRR A 


ri /n9 

D I /UZ 


R. 

o-z 


Q C 

y-o 


2N3687 


52/25 


o-o 


Q 7 

y- / 


a 0M/1QR7 


ri /no 

1 'UZ 


R 9 

o-z 


O R 

y-o 


2N38 f 9 


50/74 


Q A 


Q 9 

y-z 


OM/1 ftR7 A 


ci /no 

I /UZ 


R 

o-z 


R 

y-o 


2N3821 


55/25 


Q R 

o-O 


Q 11 

y- f i 




ki /no 

! /UZ 


Q 9 

o-z 


Q R 

y-o 


2N3822 


55/25 


R fi 

o-o 


Q 11 

y- 1 i 


OM/1 RRQ A 


ri /no 

I /UZ 


R 

o-z 


R 

y-o 


• 2N3823 


50/25 


Q A 


Q 9 

y-Z 


. OKMRRQ 


ri /no 

I /UZ 


fl 

o-z 


Q R 

y-o 


2N3824 


55/25 


ft 

o-z 


Q 11 

y- 1 i 


OM/IQCQ A 
ZIMH-OOyA 


ki /no 

D I /UZ 


R O 

o-z 


Q R 

y-o 


2N3921 


83/1 2 


Q Q 

o-o 


QIC 

y- 1 o 


. ONMft«n 


ci /no 

D 1 / UZ 


Q 9 

o-z 


Q R 

y-o 


ATI 

2N3922 


83/12 


C Q 

o-o 


Q 1 C 

y- 1 o 


9|VM OCA A 


ci /n9 

I /UZ 


Q 9 
O-Z 


y-o 


2IM3954 


83/1 2 


a-o 


Q 1C 

y- ! o 


. OMytORI 

• zIMhOO 1 


ci /no 

1 /UZ 


Q 9 

o-z 


Q R 

y-o 


2N3954A 


83/12 


Q Q 

o-o 


Q 1C 

y- 1 o 


9M/0(- 1 A 


ci /no 

D I / UZ 


ft 9 

o-z 


Q R 

y-o 


2N3955 


83/12 


ft 'A 

o-o 


Q 1C 

y- 1 o 


9MCn 1 o 
Z l\l OSJ 1 


QQ /1 1 
OO/ 1 1 


Q 1 9 
O- I Z 


q on 
y-zu 


1 1V 1 Of* C C A 

2N3955A 


83/12 


ft ft 
o-o 


Q IE 

y- 1 o 


OM cn 1 Q 


88/1 1 


Q 1 9 
o- 1 Z 


q on 
y-zu 


2N3956 


83/12 


Q Q 

o-o 


Q 1C 

y- 1 d 


2N0U2U 


89/1 1 


8-13 


o OO 

y-zz 


2N3957 


83/12 


q g 

a-o 


Q 1C 

y- 1 d 


2l\lbU21 


89/1 1 


8-13 


9-22 


2N3958 


83/12 


ft ft 
o-o 


QIC 

y- 1 o 


OM CAji C 

2NbU4b 


83/1 2 


8-9 


y- 1 o 


1 M 1 A A A 

2N3966 


50/25 


n o 

0~Z 


Q 9 
y-Z 


^NbU4o 


83/1 2 


8-9 


9-15 


2N3967 


52/25 


ft R 

o-o 


Q 7 

y- / 


9MC.n^ 7 


O 3/ 1 Z 


8-9 


QIC 

y- 1 b 


2N3967A 


52/25 


O-O 


Q 7 

y- / 


zNbU/o 


50/25 


8-4 


9-2 


2N3968 


52/25 


Q R 
O-O 


O 7 

y- / 


OM c 1 no 


50/25 


8-7 


9-2 


2IM3968A 


52/25 


ft R 
o-O 


Q 7 

y-/ 


OM C 1 Oyl 

zNbl U4 


50/25 


8-7 


9-2 


2N3969 


52/25 


ft R 

o-o 


□ 7 

y- / 


2N51 05 


50/25 


8-7 


9-2 


OM Of%C;n A 

2NJ9b9A 


52/25 


0-0 


Q 7 


• 2N51 14 


88/1 1 


8-1 2 


9-20 


O MOftlA 

zr\JJ9/U 


51/02 


o-z 


o R 
y-o 


• 2N51 1 5 


88/ 1 1 


8-12 


9-20 


o Mom i 
2N 39/ 1 


51/02 


H 9 
0"Z 


Q R 

y-o 


_ 9M ri 1 a 

• Z ri 1 1 


Oo7 I I 


Q 1 9 
o- 1 Z 


q on 
y-zu 


2N39 / I 


51/02 


Q 9 

O'Z 


Q R 

y-o 


9 me; 1 aR 

z\\o i yo 


QQ /1 O 
OO/ I Z 


Q Q 

o-y 


Q IE 

y- 1 o 


om onm 


88/23 


Q 19 

e- 1 z 


q 9n 
yzu 


2N5 1 97 


83/1 2 


8-9 


QIC 

y i o 


o a i onno a 

2N3993A 


88/23 


o 19 

0- I Z 


q 9n 


9MC 1 QQ 

z No i yo 


83/1 2 


8-9 


y- 1 b 


OM OClCiA 

2N jyy4 


88/23 


ft 1 
o- 1 Z 


q on 
y-zu 


OMC 1 QQ 

^Nb i yy 


83/1 2 


8-9 


Q IE 

y- 1 b 


2N3994A 


88/23 


ft 1 9 

O- I Z 


q on 
y-zu 


2N5245 


90/77 


8-4 


Q O/l 

y-z4 


2N4084 


83/12 


ft R 

o-o 


Q IE 

y- i d 


9MK9j1£1 
ZIMOji^O 


on/77 
yu/ / / 


Q A 


Q OA 

y-z4 


2N4085 


83/12 


q a 
o-o 


Q 1E 

y- 1 o 


2N5247 


90/77 


8-4 


9-24 


• 2N4091 


51/02 


R 9 

O-Z 


Q R 

y-o 


9MK9/1Q 


bU/ / 4 


Q A 


o o 
y-z 


• 2N4092 


51/02 


a 9 
o-z 


O fi 

y-o 


OMEOCO 

^INtbJbo 


55/25 


8-7 


Q 1 1 

y- 1 1 


• 2N4093 


51/02 


8-2 


9-5 


2N5359 


55/25 


8-7 


9-11 


2N4117 


53/25 


8-6 


9-9 


2N5360 


55/25 


8-7 


9-11 


2N4117A 


53/25 


8-6 


9-9 


2N5361 


55/25 


8-7 


9-11 


2N4118 


53/25 


8-6 


9-9 










• Denotes JAN qualified type 



20 



FET Parts List 


(Continued) 












Device 


Process/ 


Selection 


Process 


Device 


Process/ 


Selection 


Process 


racKage 


Guide 


Page 


Package 


Guide 


Page 


2N5362 


55/25 


8-7 


9-1 1 


2N5912 


93/24 


8-10 


9-28 


2N5363 


55/25 


8-7 


9-1 1 


2N5949 


50/77 


8-4 


9-2 


2N5364 


55/25 


8-7 


9-1 1 


2N5950 


50/77 


8-4 


9-2 


2N5397 


90/29 


8-4 


9-24 


2N5951 


50/77 


8-4 


9-2 


2N5398 


90/29 


8-4 


9-24 


2N5952 


50/77 


8-4 


9-2 


2N5432 


58/07 


8-2 


9-13 


2N5953 


50/77 


8-4 


9-2 


2N5433 


58/07 


8-2 


9-13 


2N6483 


95/12 


8-10 


9-32 


2N 5434 


58/07 


8-2 


9-13 


2N6484 


95/1 2 


8-10 


9-32 


2N5452 


83/12 


8-9 


9-15 


2N6485 


95/12 


8-10 


9-32 


2N5453 


83/12 


8-9 


9-15 


BC264A 


50/77 


8-13 


9-2 


2N5454 


83/12 


8-9 


9-15 


BC264B 


50/77 


8-13 


9-2 


2N5457 


55/72 


8-7 


9-1 1 


BC264C 


50/77 


8-13 


9-2 


2N5458 


55/72 


8-7 


9-1 1 


BC264D 


50/77 


8-13 


9-2 


2N5459 


55/72 


8-7 


9-11 


BF244A 


50/74 


8-13 


9-2 


2N5460 


89/71 


8-13 


9-22 


BF244B 


50/74 


8-13 


9-2 


2N 5461 


89/71 


8-13 


9-22 


BF244C 


50/74 


8-13 


9-2 


2N 5462 


89/71 


8-13 


9-22 


BF245A 


50/77 


8-13 


9-2 


2N 5484 


50/72 


8-4 


9-2 


BF245B 


50/77 


8-13 


9-2 


2N5485 


50/72 


8-4 


9-2 


BF245C 


50/77 


8-13 


9-2 


2N5486 


50/72 


8-4 


9-2 


BF246A 


51/74 


8-13 


9-5 


2N5515 


95/12 


8-10 


9-32 


BF246B 


51/74 


8-13 


9-5 


2N5516 


95/12 


8-10 


9-32 


BF246C 


51/74 


8-13 


9-5 


2N5517 


95/12 


8-10 


9-32 


BF247A 


51/77 


8-13 


9-5 


2N5518 


95/12 


8-10 


9-32 


BF247B 


51/77 


8-13 


9-5 


2N5519 


95/12 


8-10 


9-32 


BF247C 


51/77 


8-13 


9-5 


2N5520 


95/12 


8-10 


9-32 


BF256A 


50/77 


8-13 


9-2 


2N5521 


95/12 


8-10 


9-32 


BF256B 


50/77 


8-13 


9-2 


2N5522 


95/12 


8-10 


9-32 


BF256C 


50/77 


8-13 


9-2 


2N5523 


95/12 


8-10 


9-32 


J108 


58/72 


8-3 


9-13 


2N5524 


95/12 


8-10 


9-32 


J109 


58/72 


8-3 


9-13 


2N5545 


*83/12 


8-9 


9-15 


J110 


58/72 


8-3 


9-13 


2N5546 


*83/12 


8-9 


9-15 


Jill 


51/72 


8-3 


9-5 


2N5547 


*83/12 


8-9 


9-15 


J112 


51/72 


8-3 


9-5 


2N5555 


50/72 


8-2 


9-2 


J113 


51/72 


8 3 


9-5 


2N5556 


50/25 


8-7 


9-2 


J114 


90/72 


8-3 


9-24 


2N5557 


50/25 


8-7 


9-2 


J174 


88/74 


8-12 


9-20 


2N5558 


50/25 


8-7 


9-2 


J175 


88/74 


8-12 


9-20 


2N5561 


198/12 


8-9 


9-36 


J176 


88/74 


8-12 


9-20 


2N5562 


t98/12 


8-9 


9-36 


J177 


88/74 


8-12 


9-20 


2N5563 


1-98/12 


8-9 


9-36 


J201 


52/72 


8-7 


9-7 


2N5564 


96/12 


8-10 


9-34 


J202 


52/72 


8-7 


9-7 


2N556S 


96/12 


8-10 


9-34 


J 203 


52/72 


8-7 


9-7 


2N5566 


96/12 


8-10 


9-34 


J210 


90/72 


8-7 


9-24 


2N5638 


51/72 


8-3 


9-5 


J211 


90/72 


8-7 


9-24 


2N5639 


51/72 


8-3 


9-5 


J212 


90/72 


8-7 


9-24 


2N5640 


51/72 


8-3 


9-5 


J270 


88/74 


8-13 


9-20 


2N5653 


51/72 


8-3 


9-5 


J271 


88/74 


8-13 


9-20 


2N5654 


51/72 


8-3 


9-5 


J300 


90/72 


8-4 


9-24 


2N5668 


50/72 


8-4 


9-2 


J304 


50/72 


8-4 


9-2 


2N5659 


50/72 


8-4 


9-2 


J305 


50/72 


8-4 


9-2 


2N5670 


50/72 


8-4 


9-2 


J308 


92/72 


8-4 


9-26 


2N5902 


84/24 


8-11 


9-17 


J309 


92/72 


8-4 


9-26 


2N5903 


84/24 


8-11 


9-17 


J310 


92/72 


8-4 


9-26 


2N5904 


84/24 


8-11 


9-17 


J401 


t 98/60 


8-9 


9-36 


2N5905 


84/24 


8-1 1 


9-17 


J402 


t98/60 


8-9 


9-36 


2N5906 


84/24 


8-1 1 


9-17 


J403 


1 98/60 


8-9 


9-36 


2N5907 


84/24 


R-1 1 


Q. 17 


J404 


1 98/60 


8-9 


9-36 


2N5908 


84/24 


8-11 


9-17 


J405 


1 98/60 


8-9 


9-36 


2N5909 


84/24 


8-11 


9-17 


J406 


1 98/60 


8-9 


9-36 


2N5911 


93/24 


8-10 


928 


J410 


83/60 


8-9 


9-15 


*JAN qualification pending. Consult factory. 



t Process in development 



FET Parts List (continued) 




























Device 


Process/ 
Package 


Selection 
Guide 


Process 
Page 


evice 


Process/ 
Package 


Selection 
Guide 


Process 
Page 


Mil 


00/ OU 


R Q 

o-y 


9-15 


r i\i*+oou 


51/72 


8-3 


9-5 


M 1 7 


o -a yen 

DO/ OU 


P. 

o-y 


9-15 


PN4857 


51/72 


8-3 


9-5 


IVIrr IUi 


DU/ / .c 


P. R 

o-o 


9-2 


PM4RRQ 


51/72 


8-3 


9-5 


Mr r lUo 


RR '70 
DO/ / £* 


A 7 


9-1 1 


PN4859 


51/72 


8-3 


9-5 


ynri f\/1 


cc/70 


P 7 


9-1 1 


PN4860 


51/72 


8-3 


9-5 


MDri f\c 

Mr r 1 Ub 


OO/ /Z 


P 7 

o- / 


9-11 


PN486 1 


51/72 


8-3 


9-5 


Mr r 1 Ob 


DU/ / Z 


P K 

o-o 


9-2 


PNWl 
r im jl .i.. 


89/71 

03/ ' 1 


8-13 


9-22 


««rir 1 r\~l 

Mrri U/ 


50/72 


Q R 

o-o 


Q-9 


PN5163 




8-8 


9-2 


MPF 108 


55/72 


q r 
o-b 


Q-1 1 

y- 1 i 


TIS58 




8-8 


9-2 


Mrr 109 


55/72 


Q 7 

o- / 


Q 11 

y- 1 i 




OU/ / H 


o-o 


9-2 


MPF1 1 1 


50/72 


O Q 

o-o 


9-2 


TIS73 


51/77 


8-3 


9-5 


MPF1 12 


55/72 


Q D 
O-O 


Q-1 1 

y i i 


TIS74 


51 /77 


8-3 


9-5 




O.A 11 A 

»4/z4 


Q 1 1 
O- I I 


9-30 


TIS75 


51/77 


8-3 


9-5 


Mr\ en a no 


94/24 


o-l l 


y-ou 


U 1 897 E 


51/72 


8-3 


9-5 


NDF9403 


94/24 


8-11 


y-ou 


u i oyo c 


51/72 


8-3 


9-5 


NDF9404 


94/24 


8-11 


y-ou 


1 1 1RQQF 
\j i oyyt 


51/72 


8-3 


9-5 


NDF9405 


94/24 


8-1 1 


9-30 


U23 1 


83/12 


8-9 


9-15 


NDF9406 


94/1 2 


8-11 


9-30 


U232 


83/1 2 


8-9 


9-15 


NDF9407 


94/12 


8*1 1 


y-ou 


U 233 


83/1 2 


8-9 


9-15 


NUr940o 


94/1 2 


8-11 


y-ou 


■j 234 


OO/ I z 


8-9 


9-15 


N Ur 9409 


94/12 


8-11 


y-ou 


u/oo 


RT / 1 9 

OO/ I £. 


R Q 

o-y 


9-15 


NDF941 


94/12 


8-11 


Q 90 

y-ou 


U257 


so/ 


8-10 


9-28 


NF5101 


51/25 


8-5 


Q R 

y-o 


U301 


88/1 1 


8-13 


9-20 


NF5102 


51/25 


8-5 


Q r 
y-o 


U304 


88/1 1 


8-12 


9-20 


NF5103 


51/25 


8-5 


O R 

y-o 


U305 


88/1 1 


8-12 


9-20 


NPD5564 


96/67 


8-10 


Q "iA 

y-ot 


U306 


88/1 1 


8-12 


9-20 


NPD5565 


96/67 


8-10 


O 9/1 


U308 


Q9/0.7 
y^/u/ 


8-5 


9-26 


NPD5566 


96/67 


8-10 


Q 9/1 

y-o4 


U309 


92/07 


8-5 


9-26 


NPD8301 


83/67 


8 9 


QIC 

9-1 b 


i i^m 

UO 1 U 


Q9/D7 
yz/u / 


8-5 


Q-9fi 


NPD8302 


83/67 


8-9 


QIC 

y- 1 o 


U31 2 


90/07 


8-5 


9-24 


NPD8303 


83/67 


8-9 


y- 1 b 


U320 


58/09 


8-5 


9-13 


NPD9801 


1 98/67 


8-9 




U321 


58/09 


8-5 


9-13 


NPD9802 


198/67 


8-9 




U322 


58/09 


8-5 


9-13 


NPD9803 


198/67 


8-9 




U401 


1 98/1 2 


8-9 


9-36 


P1086E 


88/71 


8-12 


9-20 


U402 


t98/1 2 


8-9 


9-36 


P1087E 


88/71 


8-12 


q in 
9-2U 


U403 


198/12 


8-9 


9-36 


PF5101 


51/72 


8-5 


Q R 

y-o 


U404 


1 98/1 2 


8-9 


9-36 


PF5102 


5 1/72 


8-5 


Q R 

y-o 


U405 


tgg/12 


8-9 


9-36 


PF5103 


51/72 


8-5 


Q R 

y-o 


U406 


198/12 


8-9 


9-36 


PN3684 


52/72 


8-8 


Q 7 

y- / 


U42 1 


t 86/24 


8-1 1 


9-19 


PN3685 


52/72 


8-8 


O 7 

y- / 


U422 


t 86/24 


8-11 


Q- 1 Q 
y- i y 


PN3686 


52/72 


8-8 


9-7 




tRfi/94 

I OO/ 


O 11 

o- 1 1 


Q 1 Q 
y- 1 y 


PN3687 


52/72 


8-8 


9-7 




tRfi/94 
l OO/ ZH 


R 1 1 
O- I I 


Q 1 Q 

y- 1 y 


PN4091 


51/72 


8-3 


Q R 

y-o 


U425 


I 86/24 


8-11 


9-19 


PN4092 


51/72 


8-3 


Q R 

y-o 


U426 


t 86/24 


8-1 1 


9-19 


PN4093 


51/72 


8-3 


Q R 

y-o 


U430 


92/24 


8-10 


9-26 


PN4220 


55/72 


8-8 


Q 11 


U431 


92/24 


8-10 


9-26 




cc/70 

bb/ / z 


D Q 

o-o 


Q 11 

y- 1 1 




i 






DM/1999 


00/ / £ 


o-o 


O 1 1 

y- 1 i 










DM/i T5Q 
ri>i4z/0 


buy / / 


q r 
o-b 


Q 9 

y-z 










DM/1 99/1 
rl\J 


cn/77 
OU/ / Z 


O-O 


y-z 










rl\i4oUz 


52/72 


8-8 


9-7 










PN4303 


52/72 


8-8 


9-7 










PN4304 


52/72 


8-8 


9-7 










PN4342 


89/71 


8-13 


Q-99 










PN4360 


89/71 


8-13 


Q T) 










PN4391 


51/72 


8-3 


9-5 










PN4392 


51/72 


8-3 


9-5 










PN4393 


51/72 


8-3 


9-5 










PN4416 


50/72 


8-5 


9-2 










tProcess in development 



22 




Ml L-STD- 19500 Qualifications 





DETAIL 


QUALIFICATION 


TYPE 


DETAIL 


QUALIFICATION 


SPEC. 


JAN 


JTX 


JTXV 


SPEC. 


JAN 


JTX 


JTXV 


2N91 8 


301 


> 


„ 


x 


2N2920 


355 


x 


x 


x 


2N929 


253 


x - 


x 




2N3019 


391 


x 


x 


X 


2N930 


253 








2N3250A 


323 


x 


x 


x 


2M221 8 


251 


X 


X 


X 


2N3251A 


323 


X 


X 


X 


2N2218A 


251 


X 


X 


X 


2N3498 


366 


X 


X 


X 


2N2219 


251 


X 


X 


X 


2N3499 


366 


X 


X 


X 


2N2219A 


251 


X 


X 


x 


2N3500 


366 


X 


X 


X 


2N2221 


255 


X 


X 


X 


2N3501 


366 


X 


X 


X 


2N2221A 


255 


X 


X 


X 


2N3700 


391 


X 


X 


X 


2N2222 


255 


X 


X 


X 


2N3810 


366 


X 


X 


X 


2N2222A 


255 


X 


X 


X 


2N381 1 


366 


X 


X 


X 


2N2369A 


317 


X 


X 


X 


2N3823 


375 


X 


X 


X 


2N2484 


376 


X 


X 


X 


2N4091 


431 


X 


X 




2N2604 


354 


X 


X 


X 


2N4092 


431 


X 


X 




2N2605 


354 


X 


X 


X 


2N4093 


431 


X 


X 




2N2608 


295 


X 


X 


X 


2N4856 


385 


X 


X 


X 


2N2857 


343 


X 


X 


X 


2N4857 


385 


X 


X 


X 


2N2904 


290 


X 


X 


X 


2N4858 


385 


X 


X 


X 


2N2904A 


290 


X 


X 


X 


2N4859 


385 


X 


X 


X 


2N2905 


290 


X 


X 


X 


2N4860 


385 


X 


X 


X 


2N2905A 


290 


X 


X 


X 


2N4861 


385 


X 


X 


X 


2N2906 


291 


X 


X 


X 


2N51 14 


476 


X 


X 


X 


2N2906A 


291 


X 


X 


X 


2N5115 


476 


X 


X 


X 


2N2907 


291 


X 


X 


X 


2N5116 


476 


X 


X 


X 


2N2907A 


291 


X 


X 


X 













JANTX, TXV, NX and NXV Processing 

The 100% reliability pre-conditioning on JANTX 
parts (vs no pre-conditioning of JAN parts) has 
resulted in a significant improvement in field 
reported failure rates. 

National Semiconductor also offers JANTXV 
types (JANTX with 100% preseal visual inspection 
per MIL-STD-750 Method 2072) per the above list. 

All hermetically sealed transistors in this catalog 
(where JANTX or JANTXV specifications do not 
exist) are available with TX and TXV type 100% 
processing as NX and NXV types respectively; 
e.g., NX2N4033 is 2N4033 processed per the flow 
plans on this page. 

Production Process 
I 



Raw Material 

I 



Factory Processing 
Visual Inspection AS1050T 



Inspection Lot Formed at 
Final Assembly Operation 



100% Process Conditioning 



Preseal Visual MIL-STD-750, 
Method 2072 (Note 1) 



High Temp. Storage 
24 Hr. 200^0 



Temp. Cycling 
10 Cycles -65°C to 200° C 
Min. of 15 min. in each 
Extreme 



C/> 

EJ 

O 
c 

0) 



o 

0) 

o 

3 

(J) 



Reverse Bias Burn-In 
Time and Conditions per Spec. 



Acceleration 
Y, orientation 
20,000 G min. 



Fine + Gross Hermetic 
Seal Tests per spec 



100% Burn-I 
(Note 3) 



Measurement of specified 
parameters per spec. 



168 hr. Operating Life 
at Max. rated conditions 



Measurement of Parameters 
to determine delta per spec 



Inspection Test to Verify LTPD 



Group A - Electrical 
Test per Spec 



Group B 

1. Environmental Testing 

2. High Temp. Life 

3. Steady State Operation Life 



Group C 
per Spec 



Notel: JANTXV types only. 
Note 2: JANTX and JANTXV types only. 
Note 3: MIL-STD-19500 was under revision 
at the time of the publication of this document. 
Contact the factory for information regarding 
any changes made by this revision. 



23 



Bipolar Transistor and FET Dice 



DICE 

Standard types from National's transistor families are available in unencapsulated die form for use in hybrid 
circuits. 

FEATURES 

■ 100% probed and guaranteed to 10% LTPD for key 2N parameters. 

a. BVcBO. BV CEO, BVgBO and n FE for bipolar transistors. 

b. BVQSS. IDSS, IGSS*- RON*, Yf s , VQS(off) for FETs. 

■ Minimum 60% yield to all unprobed 2N parameters. 

■ 100% visual inspection guaranteed to 10% LTPD for criteria equivalent to Ml L-STD-883 Method 2010. 

■ Gold backing on all types. 

■ Shipment in waffle carriers. 

■ Die geometries shown in process section of catalog. Base Pad is identified by adjacent metallized circle on all 
interdigitated geometries (e.g., see Process 21). 

ALL STANDARD TYPES (see index for page listing specification) 



•FET NOTE: 

Leakages (I GSS ) <100pA 10%AQL 
R DS(on) < 10S2 10%AQL 



24 



Bipolar Transistor Equivalents List 



METAL P/N 


PLASTIC 
EQUIVALENT 


ELECTRICAL 
EQUIVALENCY* 


PROCESS 


METAL P/N 


PLASTIC 
EQUIVALENT 


ELECTRICAL 
EQUIVALENCY* 


PROCESS 


2N697 


2 N 4400 


A 


13 


2N2904A 


TN2904A 


E 


63 


2N706 


MPS706 


E 


21 


2 N 29 05 


TN2905 


E 


63 


2N708 


MPS3646 


N 


22 


2N2905A 


TN2905A 


E 


63 


2N718 


2N4400 


A 


13 


2N2906 


PN2906 


E 


63 


2N722 


PN2906 


N 


63 


2N2906A 


PN2906A 


E 


63 


2N744 


PN2369 


N 


21 


2N2907 


PN2907 


E 


63 


2N753 


PN2369 


N 


21 


2N2907A 


PN2907A 


E 


63 


2N760A 


2N4409 


N 


07 


2N3009 


MPS3646 


N 


22 


2N834 


MPS834 


E 


21 


2N3011 


PN2369 


N 


21 


2N869A 


MPS3640 


A 


65 


2N3012 


MPS3640 


A 


65 


2N915 


MPS6565 


A 


27 


2N3013 


MPS3646 


E 


22 


2N917 


MPS3563 


E 


43 


2N3019 


TN3019 


E 


12 


2IM918 


PN918 


E 


43 


2N3020 


TN3020 


E 


12 


2N929 


2N4409 


N 


07 


2N3053 


TN3053 


E 


12 


2N930 


PN930 


E 


07 


2N3117 


2N5210 


N 


07 


2N956 


PN2222A 


N 


19 


2N3133 


MPS3703 


N 


63 


2N995A 


MPS3640 




65 


2N3134 


MPS3645 


N 


63 


2N1132 


PN2906 


N 


63 


2N3135 


MPS3703 


N 


63 


2N1613 


PN2221A 


N 


19 


2N3136 


MPS3645 


N 


63 


2N1711 


PN2222A 


N 


19 


2N3250 


2N3905 


A 


66 


2N2218 


TN2218 


E 


19 


2N3251 


2N3906 


A 


66 


2N2218A 


TN2218A 


E 


19 


2N3300 


2N4401 


A 


13 


2N2219 


TN2219 


E 


19 


2N3301 


2N4400 


A 


13 


2N2219A 


TN2219A 


E 


19 


2N3302 


2IM4401 


A 


13 


2N2221 


PN2221 


E 


19 


2N3304 


MPS3639 


A 


65 


2N2221A 


PN2221 A 


E 


19 


2N3724 


TN3724 


E 


25 


2N2222 


PN2222 


E 


19 


2N3725 


TN3725 


E 


25 


2N2222A 


PN2222A 


E 


19 


2N3944 


2N3903 


N 


23 


9N2^fiQ 






2 1 


2N3947 


zivoyut 


M 
IM 


£0 


2N2369A 


PN2369A 


E 


21 


2N3962 


2N5086 


N 


62 


2N2483 


2N5209 


N 


07 


2N3964 


2N5087 


N 


62 


2N2484 


2N5210 


N 


07 


2N3965 


2N5087 


N 


62 


2N2604 


2N5086 


N 


62 


2N4033 


TN4033 


E 


67 


2N2605 


2N5086 


N 


62 


2N4036 


TN4036 


E 


67 


2N2894 


MPS3640 


A 


65 


2N4037 


TN4037 


E 


67 


2N289A 


MPS3639 


A 


65 


2N4208 


MPS3640 


N 


65 


2N2904 


TN2904 


E 


63 


2N4209 


MPS3640 


N 


65 



*E = Exact electrical equivalent 
N = Near electrical equivalent 
A = Approximate equivalent 

Note: On "IM" and "A" categories please refer to device specification section for deviation from metal can specifications. 



This list is for use when an alternative to a metal can transistor is needed. 



To facilitate conversions on the most popular types National is offering the "PIM" series, TO-92 devices that use the same die 
type and are screened to same electrical specifications. The TO-92 transistors produced by National Semiconductor are the 
most advanced Plastic Transistors ever manufactured. They utilize epoxy B encapsulation and a copper lead frame, to give a 
power dissipation of 625 mW (s> T A = 25°C. These transistors provide electrical performance and reliability equivalent to their 
metal can versions in most applications where T A does not exceed 150°C. 



Conversion of TO-105/TO-106 to TO-92 



National has chosen to no longer produce the 
TO-105/106 plastic transistor line. The decision to 
drop this line was based on two major factors: 
cost and performance. 

The TO-92 is the most advanced transistor offered 
today. With its automated assembly, it has the 
lowest potential cost. By contrast, the TO- 105/ 
106 is a hand-assembled product and its cost is 
tied to ever-increasing labor costs. One can save 
20% to 50% by using TO-92 equivalents. 

Our TO-92 is encapsulated in "Epoxy B" and has a 
copper lead frame. This is the superior TO-92 
available today. As compared with TO-105/106, 
our TO-92 has better than twice the power dissipa- 
tion of either package. 

We have done several things in order to make this 
conversion as easy as possible. We are offering a 



series on "PN" ("PN" and "J" in FETs) part 
numbers that have exactly the same number as the 
original part; i.e., 2N3565 becomes a PN3565. 
These PN types use the same chip and are screened 
to the same electrical specification as the original 
part. The original parts have a pin circle, TO-106 = 
TO-18 and TO-105 = TO-5, so we will supply 
TO-92 lead formed to the appropriate configura- 
tion at no extra charge. If you enter an order to 
the old part number, our computer will automati- 
cally convert it to the correct PN number with the 
correct lead form; i.e., 2N3565 becomes PN3565- 
18. In the case of some of the less popular types, 
we have converted to the nearest part type using 
the same chip. Please use the conversion chart on 
the next page as a guide. 

It is our intent to service our customers with the 
highest quality and most cost-effective product 
available. 



TO-92 Device to TO-5 Pin Circle 




PIN 


T 


1 


E 


2 


B 


3 


C 



" ,u " (1.270) 
(2.HD> MAX 
MAX i 



0-160 

{4.06*1 ^ 



0180 

14.572) 




PIN 


FET 


T 


1 


S 


E 


2 


D 


B 


3 


G 


C 



TO-92 Device to TO-18 Pin Circle 



0.180 
(4.572) 

7_ 



0.014-0016 
(0.35B-0.406) 
3 LEADS 



o.tao 

f (4.572) 



IM-0 180 
(3.810-4572} 
100 

— 1/- 10 NOM TTs40i 
'/- ' , \ DIA Ml 



I P BIS 
- '0 361 



DIA PIN CIRCLE 



26 



Conversion of TO-105/TO-106 to TO-92 (continued) 








Bipolar 






TO- 105/ 106 


TO-92 


TO- 105/ 106 


TO-92 


TO- 105/ 106 


T092 


EN2222 


PN2222-18 


2N3692 


PN 3692- 18 


2N4965 


zNbUoO- io 


EN 2369 A 


PN2369A-18 


2N3693 


MPS3693-18 


2N4966 


zN bzUy-lo 


EN 2484 


PN 2484- 18 


2N3694 


PN3694-18 


2N4967 


zNbZl U- io 


3N2907 


PN 2907- 18 


2N4121 


PN4121-18 


2N4968 


om conn 1 q 
zN bZUy-lo 


EN918 


PN918-18 


2N4122 


PN4122-18 


2N4969 


DMOOOI 1Q 

rNzzzl-1 o 


EN930 


PN930-18 


2N4140 


PN4140-18 


2N4970 


DM OOT) 1 Q 


SM3904 


2N3904-18 


2N4141 


PN4141-18 


2N4971 


rlMzyUb- 1 o 


SM3906 


2N3906-18 


2N4142 


PN4142-18 


2N4972 


rNzyU/-lo 


2N3563 


PN3563-18 


2N4143 


PN4143-18 


2N5127 


rNb I Z/-JO 


2 N 3564 


PN3564-18 


2N4248 


PN4248-18 


2N5128 


DMC1 OQ R 

rNb 1 zo-b 


2N3565 


PN3565-18 


2N4249 


PN 4249 18 


2N5129 


rNb I zy- 1 o 


2N3566 


PN3566-5 


2N4250 


PN4250-18 


2N5130 


DMCi on 1 Q 
r IM b I oU- I o 


2N3567 


PN3567-5 


2N4250A 


PN4250A-18 


2N5131 


rNb Io 1- Io 


2N3568 


PN3568-5 


2N4258 


PN4258-18 


2N5132 


dm cm 1 o 
rNb I oz- Io 


2N3569 


PN3569-5 


2N4258A 


PN4258A-18 


2N5133 


DM C. 1 1 O 

rNb I oJ- I O 


2N3638 


PN3638-5 


2N4274 


PN4274-18 


2N5134 


rNb I o4- 1 o 


2N3638A 


PN3638A-5 


2N4275 


PN4275-18 


2N5135 


DMCI OC 1 Q 

rNb I ob- io 


2N3639 


PN3639-18 


2N4354 


PN4354-5 


2N5136 


rNb 1 oo-b 


2N3640 


PN 3640- 18 


2N4355 


PN4355-5 


2N5137 


DM C 1 0~7 1 Q 


2N3641 


PN3641-5 


2N4356 


PN4356-5 


2N5138 


DM C 1 OO 1 O 


2N3642 


PN3642-5 


2N4916 


PN4916-18 


2N5139 


DM C 1 on 1 o 

rNbl oy-lo 


2N3643 


PN3643-5 


2N4917 


PN4917-18 


2N5142 


PN5142-18 


2N3644 


PN3644-5 


2N4944 


PN2222A-18 


2N5143 


ri\D 1 £ \ J- 1 o 


2N3645 


PN3645-5 


2N4945 


PN2222A-18 


2N5910 


PN5910-18 


2N3646 


PN 3646- 18 


2N4946 


PN2222A-18 






2N3691 


PN3691-18 


2N4964 


MPSA70-18 






FETs 


TO- 106 


TO-92 


TO- 106 


TO-92 


TO- 106 


TO-92 


E100 


J203-18 


E300 


J 300- 18 


KE4393 


PN4393-18 


E101 


J201-18 


E304 


J304-18 


KE4416 


PN4416-18 


E102 


J 202- 18 


E305 


J305-18 


KE4857 


PN4857-18 


E103 


J203-18 


E308 


J308-18 


KE4858 


PN4858-18 


E108 


J108-18 


E309 


J 309- 18 


KE4859 


PN4859-18 


E109 


J109-18 


E310 


J310-18 


KE4860 


PN4860-18 


E110 


J 1 1 0- 1 8 


E311 


J 309- 18 


KE4861 


PN4861-18 


El 1 1 


J111-18 


E312 


J310-18 


ITE4391 


PN4391-18 


E112 


J112-18 


KE3684 


PN3684-18 


ITE4392 


PN4392-18 


El 13 


J113-18 


KE3685 


PN3685-18 


ITE4393 


PN4393-18 


El 14 


J114-18 


KE3686 


PN 3686- 18 


P1086E 


P1086E 


E174 


J174-18 


KE3687 


PN3687-18 


P1087E 


P1087E 


E175 


J175-18 


KE4091 


PN4091-18 


U1897E 


U1897E 


E176 


J176-18 


KE4092 


PN4092-18 


U1898E 


U1898E 


E201 


J201-18 


KE4093 


PN4093-18 


U1899E 


U1899E 


E202 


J 202 18 


KE4220 


PN4220-18 


2N4302 


PN4302-18 


E203 


J 203- 18 


KE4221 


PN4221-18 


2N4303 


PN4303-18 


E210 


J210-18 > 


KE4222 


PN4222-18 


2N4304 


PN4304-18 


E211 


J211-18 


KE4223 


PN4223-18 


2N4342 


PN4342-18 


E212 


J212-18 


KE4224 


PN4224-18 


2N4343 


PN4343-18 


E270 


J270-18 


KE4391 


PN4391-18 


2N4360 


PN4360-18 


E271 


J271-18 


KE4392 


PN4392-18 


2N5033 


PN5033 










2N5163 


PN5163 



27 



Choose The Proper FET 



National Semiconductor utilizes 17 different FET geometries to cover, without compromise, the full spectrum 
of applications. Detailed data on each process, along with a list of all part numbers manufactured from each 
process, is to be found in Section 9. 

To further simplify the selection procedure, the FET Family Tree is included for quick identification. After 
narrowing down the process types, it is suggested that the process sheets and specific part number characteris- 
tics be consulted. 



N-CHANNEL SINGLES 



GENERAL PURPOSE AMP 

P50 — gfs 3-7 mmhos 
loss 1-20 rnA 

P52 - 0.5-3 mmhos 
Idss 0.1-10 mA 

P55 - 0.8-5 mmhos 
Idss 0.5-17 mA 



FET FAMILY TREE 



P-CHANNEL SINGLES 



GENERAL PURPOSE AMP 
P88 - 4-17 mmhos 

Idss 5-90 mA 
P89 - 1-4 mmhos 

Idss 0.3-20 mA 



N-CHANNEL DUALS 





GENERAL PURPOSE 


P83 


-l G 3pA@20V 




0.85 mmho 9 0.2 mA 


P94 


- I G 1 pA@35V 




CMRR 125 dB 



RF/VHF/UHF 

P50 - G ps 12dB@400MHz 

9^ 5.5 mmhos 
P90 - G pt 11dB@450 MHz 

9ft 8 mmhos 
P92 - G K 12dB@450MHz 

9fs 19 mmhos 



SWITCH/CHOPPER 
P88 - r DS 50-200 ohms 

Idioffi 50 pA 
P89 - r DS 450 ohms 

Idioffi 20 pA 



ULTRA-LOW INPUT CUR 

P84 - 1 pA@25V 

Bfs 175 nmho 
P8B - Ig 01 pA 

gf s 500 ^mho 



ULTRA-LOW LEAKAGE AMP 

P50 - l sss 5 pA @ 20V 

gts3-7 mmhos 
P53 - l GSS 0.3 pA 9 20V 

9fc 0.08-0.3 mmhos 



WIDE BAND-LOW NOISE 

P93 - gt, 6 mmhos 9 5 mA 

C.4.2PF 
P96 - J* 9 mmhos 9 2 mA 

C B 10pF 



LOW FREQ-LOW NOISE AMP 

P50 - <s„ 8nV/VHz@10Hz 
C b 3pF 

P51 - e„6nV/VHz@10Hz 
Sfs 20 mmhos 



LOW FREQ-LOW NOISE 

P95 - «„8nV/VRz"@10Hz 

gfs 1-4 mmhos 
P9B - e„7nV/VHilsi10Hz 

gts 10-22 mmhos 





SWITCH/CHOPPER 


P50 


- r DS 100-500 ohms 




Idioffi 5 pA 


P51 


- r DS 20-100 ohms 




Idioffi 15 pA 


P58 


- r DS 3-20 ohms 




Idioffi 50 pA 



National Semiconductor manufactures a broad line of silicon Junction Field Effect Transistors (JFETs). 
National's JFETs provide excellent performance in many areas such as RF amplifiers, analog switching, low 
input current amplifiers, low noise high impedance amplifiers and outstanding matched duals for operational 
amplifiers input applications. 

The following FET guides enable the user to determine when to use FETs and whereto look for the best choice. 







CO CO 

1 1 

S> 5 


i 

3 


o* 

J 


CM 











UJ 

r*» 

! 


IN 
CO 

I 










J 








•1 


m co 
*T 


ID 

to 


et] 
in 


CM 




i 






CO 
CO 


CO 




o 

7 






1 






POPULAR PRODUCT 


6. 2N5485 
6, PN4302 


z z 

^r 


z 

CM 


7-9, 2N3' 
7A-19A 


or 

CM 




u> 

<N 




a 


o 


2N5< 


o 
3 


CO 

o 

CO 


CM 


o 


z 






TYPES 


to to 

1 1 


1338-4' 


cm* en 

I I 


or 


<y>* co 

1 ! 


en 

I 


CM CO 
03 4 


en 

1 

8 

to 


7 J3 


10, i 


7 


o 


Pol 

1 


to 


n 

J 




11 


IS) If) 
CO CO 




cm in 
co or 


CO 

or 


en m 

•- OJ 


o 

CD 


1 


O £ 


o» 

CO 


1 


en 

B 


CTJ 


in 


3 

in 


IO 
LR 




cm o. 


or tr 
z z 


CM 


or or 

CM CM 


CO IA 

z z 


to 
z 


lfl «•> 
Z Z 


to 
Z 

~ — — 


s? 


in in 
z z 


z 


to 

CM 


1 

D 


Z 


a 


ID 

z 


IO 

Z 


in 
Z 




50 


— r— 



52 


53 




— — ■ 


— — 





86 


88 



89 


90 


92 


— — 




95 



' 





Low Current Amplifier 






I 


p 




S 







P 


P 


P 




P 








p 


P 




P 


Low Freq Ampli < 100 Hz 






S 




S 




P 






S 


S 








p 


P 




P 


Hitjh Freq Ampli > 100 MHz 


P 






















P 


p 


P 






' P 




General Purpose Amplifier 


P 




P 




P 












P 
















Low Noise Amp (10 Hz e n ) 


S 


s 






S 


S 


P 
















p 


P 


P 


P 


Low Noise Amp > 50 MHz 


P 








S 














P 


p 


P 






P 




High Frequency Mixer 


P 






















P 


p 












Dual Diff Pair 














P 


P 


P 










P 


p 


S 


P 


P 


AGC Amplifier 


P 








P 




























Electrometer Preamp 








p 








P 


P 












p 






S 


Microvolt Amplifier 








p 








P 


P 












p 






P 


Low Leakage Diode 








p 






























Diff /Angle Ended Inp. Stag. 














P 


P 


P 










P 


p 




P 


P 


Active Filter 


P 




s 




P 




























Oscillator 


P 




s 




P 












s 


P 


p 












Voltage Variable Resistor 


P 


p 


s 




P 










P 


p 














P 


Hybrid Chips 


P 


p 




p 


P 




P 


P 


P 


P 


p 








p 








Analog/Digital Switch 




p 








P 








P 














s 


s 


Multiplexing 


P 


p 






s 


S 








P 


















Choppers 




p 








P 








P 














p 




Nixie Drivers 






































Reed Relay Replacement 












P 


























Sub pA Dual Diff Pair 
















P 


P 




















Sample-Hold 


P 


p 






s 








s 


P 
















p 


Buffer Interface to CMOS 




















P 


p 
















Matched Switch 














S 














S 


s 




p 


p 


HF>400 MHz Prime 
























P 


p 












Current Limiter 




p 
















P 


















Current Source 






p 


s 


p 












s 

















P - Prime Choice S - Secondary lAlternatel Choice 




FET Application Guide (Continued) 



ADVANTAGES OF USING FIELD-EFFECT TRANSISTORS 



APPLICATION 


ADVANTAGES 


FINAL ASSEMBLY WHERE USED 


DC Amplifiers 


High Z in 

Low drift duals 

Low noise 


Transducers, military guidance 
systems, control systems, temp 
indicators, multimeters 


Low frequency 
amplifiers 


Small coupling capacitors 
Low noise, distortion 
High input impedance 


Sound detection, microphones, 
inductive transducers, hearing aids, 
high impedance transducers 


Operational 
amplifiers 


Summing point essentially 
zero. Low device noise. 
Less loading of transducers 


Control systems, potted op amps, 
test equipment, medical electronics 


Medium and high 

frequency 

amplifiers 


Low cross modulation 
Low device noise 


FM tuners, communication received 
scope inputs, most instrumentation 
equipment, high impedance inputs 


Mixers - 100 MHz 
and up 


Low mixing noise 
Low cross modulation 


FM tuners, communication receivers 


Oscillators 


Low drift 


Transmitters, receivers, organ 


Logic gates 


Virtually infinite fan in 
Simplified circuitry 
Zero storage time 
Symmetrical 


Guidance controls, computer market 
mini military teaching aids, traffic 
control, telemetry 


Choppers 


Zero offset 
Low leakage currents 
Simplified circuitry 
Eliminates input transformers 


Op amp modules guidance controls 
instrumentation equipment 


AD Converters 
Multiplex switching 
(arrays) and sample hold 


Improved isolation of input 
and output. Zero offset. 
Symmetrical. Low resistance 
Simplified circuitry 


Control system, DVM's and any read- 
out equipment, medical electronics 


Relay contact 
replacement 


Solid state reliability 

Zero offset. High isolation 

Symmetrical 

No inductive spring 

No contact bounce 

High repetition rate 


Test equipment, airborne equipment 
instrumentation market 


Voltage variable 
resistor 


Symmetrical 
Solid state reliability 
Functions as variable resistor. 
Low noise. High isolation 
Improved resolution 


Organ, tone controls, control ckts to 
input operational amplifiers 


Current limiters 
Sources 


Two lead simplicity 
Wide selection range 
Low voltage operation 


Hybrid circuits, amplifiers, power supply 
protection, timing ckts, voltage 
regulators 



31 



JFET Cross Reference Guide 

This guide contains cross reference information to 
more than 850 Junction FETs, including many 
obsolete or otherwise unavailable types. Every 
effort has been made to recommend a replacement 
FET which will plug into an existing socket and 
work as well as the part it replaces. Let the replace- 
ment code be your guide. If you do not find a 
particular part in this guide and you know its 
specification, you should refer to "How To Use 
This Catalog" in this section. 



REPLACEMENT CODE 

* Identical specification and pin configuration 

• Equal or better specification, identical pin 
configuration 

■ Similar specification acceptable for all but the 
most critical applications, similar pin configura- 
tion 

CF Consult Factory or Local Sales Representative, 
available on special order 

N No equivalent process 



INDUSTRY TYPE 


REPLACEMENT 


NATIONAL 
PART 
NUMBER 


NUMBER 


CODE 


2N2386 


■ 


2N2608 


2N2386A 


■ 


2N4381 


2N2497 


■ 


2N5021 


2N2498 


■ 


2N5021 


2N2499 


■ 


2N4381 


2N2500 


■ 


2N4381 


2N2606 


N 




2N2607 


N 




2N2608 


» 


2N2608 


2N2609 


* * 


2N2609 


2N2841 


N 




2N2842 


N 




2N2843 




2N5020 


2N2844 




2N5020 


2N3066 




2N4340 


2N3067 




2N4338 


2N3068 




2N4338 


2N3069 




2N3069 


2N3070 




2N3070 


2N3071 




2N3071 


2N3084 




2N4340 


2N3085 




2N4340 


2N3086 




2N4340 


2N3087 




2N4340 


2N3088 




2N4339 


2N3088A 




2N4339 


2N3089 




2N4339 


2N3089A 




2N4339 


2N3277 


N 




2N3278 


N 




2N3328 


• 


2N3330 



INDUSTRY TYPE 

ER 



REPLACEMENT 
CODE 



2N3330 

2N3331 

2N3332 

2N3365 

2N3366 

2N3367 

2N3368 

2N3369 

2N3370 

2N3376 

2N3378 

2N3380 

2N3382 

2N3384 

2N3386 

2N3436 

2N3437 

2N3438 

2N3452 

2N3453 

2N3454 

2N3455 

2N3456 

2N3457 

2N3458 

2N3459 

2N3460 

2N3574 

2N3575 

2N3578 

2N3684 

2N3684A 

2N3685 

2N3685A 

2N3686 

2N3686A 

2N3687 

2N3687A 

2N3819 

2N3820 

2N3821 

2N3822 

2N3823 

2N3824 

2N3909 

2N3909A 

2N3921 

2N3922 

2N3954 

2N3954A 

2N3955 

2N3955A 

2N3956 

2N3957 

2N3958 

2N3966 



NATIONAL 

NUMBER 

2N3329 
2N3330 
2N3331 
2N3332 
2N4340 
2N4338 
2N4338 
2N3368 
2N3369 
2N3370 
2N3329 
2N3330 
2N3331 
2N3382 
2N3384 
2N3386 
2N3436 
2N3437 
2N3438 
2N3685 
2N4118 
2N4119 
2N3685 
2N4118 
2N4119 
2N3458 
2N3459 
2N3460 
2N3329 
2N3329 
2N2608 
2N3684 
2N3684 
2N3685 



2N3686 

2N3686 

2N3687 

2N3687 

2N3819 

2N3820 

2N3821 

2N3822 

2N3823 

2N3824 

2IM3331 

2N3331 

2N3921 

2N3922 

2N3954 

2N3954A 

2N3955 

2N3955A 

2N3956 

2N3957 

2N3958 

2N3966 



33 



0) 

;o 
'5 
O 

0) 

o 
c 

0) 

W 
V) 
O 

O 

UJ 
LL 



JFET Cross Reference Guide (continued) 







NATIONAL 




REPLACEMENT 


NATIONAL 


INDUSTRY TYPE 


REPLACEMENT 


PART 
NUMBER 


INDUSTRY TYPE 


PART 
NUMBER 


NUMBER 


CODE 


NUMBER 


CODE 


2N3967 


# 


2N3967 


2N4856 


* 


2N4856 


2N3967A 


* 


2N3967A 


2N4856A 


* 


2N4856A 


2N3968 


* 


2N3968 


2N4857 


* 


2N4857 


2 N 3968 A 




2N3968A 


2N4857A 


• 


2N4857A 


2N3969 


• 


2N3969 


2N4858 


» 


2N4858 


2N3969A 




2N3969A 


2N4858A 


» 


2N4858A 


2N3970 


* 


2N3970 


2N4859 


* 


2N4859 


2N3971 


* 


2IM3971 


2N4859A 




2N4859A 


2N3972 


* 


2N3972 


2N4860 


» 


2N4860 


2N3993 


* 


2N3993 


2N4860A 


2N4860A 


2N3993A 


* 


2N3993A 


2N4861 


* 


2N4861 


2N3994 


* 


2N3994 


2N4861 A 


* 


2N4861 A 


9N3QQ4A 


* 


2N3994A 


9N4R67 


CF 




2N4082 


CF 




9N4fffi7A 


CF 




2N4083 


CF 




9N4RRR 


CF 




9N40R4 


# 


2N4084 


9N4RfiRA 


CF 




2N40RR 

£ 1 N*TUCJO 


* 


2N4085 


2N4RRQ 

£ 1 *■ " VJ C7 


CF 




2N4091 


* 


2N4091 


9NI4RfiQA 


CF 




2N4092 


* 


2N4092 


2N4881 


N 




2N4093 


* 


2N4093 


2N4882 


N 




2N41 1 7 


* 


2N41 17 


9M4RRT 

£ IVHOOJ 


N 




2N41 17A 


* 


2N41 17A 


2N4884 


N 




2N41 18 


* 


2N4118 


2N4885 


N 




9KI41 1 RA 

£ lit I I OH 


* 


9N41 1 RA 


9N4RRfi 


N 




2N41 19 




2N41 19 


2N4977 


■ 


2N5432 


2N41 1 9A 


* 


9M41 1QA 


2N4978 


■ 


2 N 5433 








9M4Q7Q 


■ 


2N5434 


9M499fl 




9N4990 


£lMOU 1 O 


* 


Z l\DV 1 O 


9f\i499HA 


• 


9M4990A 


£ IN DU 1 O 


• 


9NRD1Q 


9N4991 
£llH££ 1 


* 


2N4221 


2N5020 


* 


ZIMUUZU 


9N4991 A 
£lM*+££ 1 M 


* 


9N4991 A 


£lMOU£ I 


* 




2N4222 


• 


2N4222 








9N4999A 


* 


9N4999A 




* 




2N4223 


• • 


2N4223 


2 (sj 5046 


» 


2 N 5046 


2N4224 


* 


2N4224 


9NR047 
£11 out / 


* 


9N5D47 


2N4302 


• 


PN4302 


2N5078 


* 


2N5078 


2N4303 


• 


PN4303 


tl« J 1 V/O 


* 


9N5103 


2N4304 


• 


PN4304 


2N5104 


* 


2N5104 


2N4338 


* 


2N4338 


ilVJ 1 OO 


* 


2N5105 

£ 1 v O 1 WO 


2N4339 




2N4339 


2N51 14 


* 


2N51 14 


2N4340 


* 


2N4340 


2N51 15 


* 


2N51 15 


2N4341 


* 


2N4341 


2N51 16 


• 


9NR1 ifi 


2N4342 


• 


PN4342 


9NR1RT 


* 




2N4343 


CF 




9MR1 Qfi 


* 


9NR1Qfi 

£llo 1 3D 




• 


PN4360 


2N5197 


* 


2N5197 


2N4381 


* 


2N4381 


9NR1QR 


* 


9NR1 QR 
£11 o 1 90 


2N4382 


■ 


2N51 15 


9NR1QQ 




9NR1 QQ 

£110 1 99 


2(SJ4391 


* 


2N4391 


9NR94R 

£(N O^HO 


* 


£l10£Ho 


2N4392 


* 


2N4392 


2N5246 


m * 


9 MR94fi 

£llO£ t TD 




* 


9N43Q3 

£ 1 *HJ JO 


2N5247 


* 


9NR9A7 

£ll 0£*4 / 


2N4416 


* 


2N4416 


2 N 5248 


• 


2N5248 


2N4416A 


# 


2N4416A 


2N5265 


CF 




2N4417 


N 




2N5266 


CF 




2N4445 


• 


2N5432 


2N5267 


CF 




2N4446 


• 


2N5433 


2N5268 


CF 




2N4447 


• 


2N5432 


2N5269 


CF 




2N4448 


• 


2N5433 


2N5270 


CF 





34 



JFET Cross Reference Guide (continued) 




INDUSTRY TYPE 
NUMBER 


REPLACEMENT 
CODE 


NATIONAL 
PART 
NUMBER 


INDUSTRY TYPE 
NUMBER 


REPLACEMENT 
CODE 


NATIONAL 

PART 
NUMBER 


2N5277 


N 




2N5555 


* 


2N5555 


2N5278 


N 




2N5556 


* 


2N5556 


2N5358 


• 


2N5358 


2N5557 


* 


2N5557 


2N5359 


* 


2N5359 


2N5558 


* 


2N5558 


2N5360 




2N5360 


2N5561 


* 


2N5561 


2N5361 


• 


2N5361 


2N5562 


• 


2N5562 


2N5362 


* 


2N5362 


2N5563 




2N5563 


2N5363 


* 


2N5363 


2N5564 


* 


2N5564 


2N5364 


* 


2N5364 


2N5565 




2N5565 


2N5391 


CF 




2N5566 


* 


2N5566 


2N5392 


CF 




2N5638 


• 


2N5638 


2N5393 


CF 




2N5639 


• 


2 N 5639 


2N5394 


CF 




2N5640 


* 


2N5640 


2N5395 


CF 




2N5647 


■ 


2N3686 


2N5396 


CF 




2N5648 


■ 


2N3686 


2N5397 




2N5397 


2N5649 


■ 


2N3685 


2N5398 


♦ 


2N5398 


2N5653 




2N5653 


2N5432 


* 


2N5432 


2N5654 


* 


2N5654 


2N5433 


* 


2N5433 


2N5668 


* 


2N5668 


2N5434 


# 


2N5434 


2N5669 


• 


2 N 5669 


2N5452 


* 


2N5452 


2N5670 


• 


2N5670 


2N5453 


* 


2N5453 


2N5902 


* 


2N5902 


2N 5454 


* 


2N5454 


2N5903 


• 


2N5903 


2N5457 


* 


2N5457 


2N5904 


» 


2 N 5904 


2NS458 


* 


2N5458 


2N5905 


* 


2N5905 


2N5459 


* 


2N5459 


2N5906 


* 


2N5906 


2N5460 


* 


2N5460 


2N5907 


• 


2N5907 


2N5461 


* 


2N5461 


2N5908 


* 


2N5908 


2N5462 


* 


2N5462 


2N5909 


• 


2N5909 


2N5463 


N 




2N5911 


* 


2N591 1 


2N5464 


N 




2N5912 




2N5912 


2N 5465 


N 




2N5949 


• 


2N5949 


2N5471 


■ 


2N5020 


2N5950 


# 


2N5950 


2N5472 


■ 


2N5020 


2N5951 


* 


2N5951 


2N5473 


■ 


2N5020 


2N5952 


* 


2N5952 


2N5474 


■ 


2N5020 


2N5953 


* 


2 N 5953 


2N5475 


■ 


2N5020 


2N6449 


N 




2N5476 


■ 


2N5020 


2N6450 


N 




2N5484 


# 


2N5484 


2N6451 


CF 




2N5485 


• 


2N5485 


2N6452 


CF 




2N5486 


» 


2N5486 


2N6453 


CF 




2N5B15 


• 


2N5515 


2N6454 


CF 




2N5516 


* 


2N5516 


2N6483 


* 


2N6483 


2N5517 


* 


2N5517 


2N6484 


* 


2N6484 


2N5518 


* 


2N5518 


2N6485 


* 


2N6485 


2N5519 


* 


2N5519 


A5T6449 


N 




2N5520 


* 


2N5520 


A5T6450 


N 




2N5521 




2N5521 


AD3954 


• 


2N3954 


2N5522 


* 


2N5522 


AD3954A 


• 


2N3954A 


2N5523 


» 


2N5523 


AD3955 


• 


2N3955 


2N5524 


* 


2N5524 


AD3955A 


* 


2N3955A 


2N5543 


N 








2N3956 


2N5544 


N 




AD3957 


• 


2N3957 


2N5545 


# 


2N5545 


AD3958 




2N3958 


2N5546 


* 


2N5546 


AD5905 




2 N 5905 


2N5547 


# 


2N5547 


AD5906 




2N5906 


2N5549 


• 


2N5397 


AD5907 




2N5907 



35 



JFET Cross Reference Guide (continued) 







NATIONAL 


INDUSTRY TYPE 
NUMBER 


REPLACEMENT 
CODE 


NATIONAL 


MnilSTRY TYPE 
NUMBER 


REPLACEMENT 
CODE 


PART 
NUMBER 


PART 
NUMBER 


AD5908 


• 


2N5908 


E100 


• 


J202 


AD5909 


• 


2N5909 


E101 


• 


J201 


AD830 


■ 


2N5906 


E102 


• 


J202 


AD831 


■ 


2N5907 


E103 


• 


J203 


AD832 


■ 


2N5908 


E105 


N 




AD833 


■ 


2N5909 


E106 


N 




AD833A 


■ 


2N5909 


E107 


N 




AD835 


■ 


NDF9407 


E108 


• 


J108 


AD836 


■ 


NDF9408 


E109 


• 


J109 


AD837 


■ 


NDF9408 


El 10 


• 


J110 


AD838 


■ 


NDF9409 


E111 


• 


J111 


AD839 


■ 


NDF9410 


El 12 


• 


J112 


AD840 


■ 


2N5520 


E113 


• 


J113 


AD841 


■ 


2N5521 


E114 


• 


J114 


AD842 


■ 


2N5523 


E174 


• 


J174 


AD845 


■ 


2N5911 


E175 


• 


J175 


AD846 


■ 


2N5912 


E176 


• 


J176 


BF244A 


* 


BF244A 


E177 


• 


J177 


BF244B 


* 


BF244B 


E201 


• 


J201 


BF244C 


* 


BF244C 


E202 


• 


J202 


BF245A 


* 


BF245A 


E203 


• 


J203 


BF245B 


* 


BF245B 


E210 


• 


J210 


BF245C 


* 


BF245C 


E211 


• 


J211 


BF246A 


* 


BF246A 


E212 


• 


J212 


BF246B 


* 


BF246B 


E230 


■ 


PN3685 


BF246C 


* 


BF246C 


E231 


■ 


PN3684 


BF247A 


* 


BF247A 


E232 


■ 


PN368 


BF247B 


* 


BF247B 


E270 


• 


J270 


BF247C 


* 


BF247C 


E271 


• 


J271 


BF256A 




BF256A 


E300 


• 


J300 


BF256B 




BF256B 


E304 


• 


J304 


BF256C 


* 


BF256C 


E305 


• 


J305 


BF264A 


* 


BF264A 


E308 


• 


J308 


BF264B 


* 


BF264B 


E309 


• 


J309 


BF264C 


* 


BF264C 


E310 


• 


J310 


BF264D 




BF264D 


E311 


• 


J309 


C413N 


• 


2N4859 


E312 


• 


J310 


C681 


■ 


2N4338 


E400 


CF 




C681A 


■ 


2N4338 


E401 


CF 




C683 


■ 


2N4339 


E402 


CF 




C683A 


■ 


2N4339 


E410 


CF 




C685 


■ 


2N4220 


E411 


CF 




C685A 


■ 


2N4220 


E412 


CF 




CM640 


■ 


2N4391 


E420 


■ 


U257 


CM641 


■ 


2N4391 


E421 


■ 


U257 


CM642 


■ 


2N4392 


FE0654A 


• 


PN4416 


CM643 


■ 


2N4391 


FE0654B 


• 


PN4303 


CM644 


■ 


2N4393 


FE3819 


• 


2N3819 


CM645 


■ 


2N4392 


FE5245 


• 


2N5245 


CM646 


■ 


2N4392 


FE5246 


• 


2N5246 


CM647 


■ 




FE5247 


• 


2N5247 


CP640 




U322 


F E5457 




2N5457 


CP643 




2N4391 


FE5458 




2N5458 


CP650 




U322 


FE5459 




2N5459 


CP651 




U320 


FE5484 




2N5484 


CP652 




U322 


FE5485 




2N5485 


CP653 




U320 


FE5486 




2N5486 



JFET Cross Reference Guide (continued) 




NATIONAL 






NATIONAL 


INDUSTRY TYPE REPLACEMENT ~"Y™yT 


INDUSTRY TYPE 


REPLACEMENT 




NUMBER CODE PART 

j^| g £- ^ 


NUMBER 


CODE 


PART 
NUMBER 


FM1100A ■ 2N5906 


J114 


* 


J1 14 


FM1101A ■ 2N5906 


J174 


* 


J174 


FM1102A ■ 2N5907 


J175 


* 


J175 


FM1103A ■ 2N5908 


J176 


* 


J176 


FM1104A ■ 2N5909 


J177 


* 


J177 


FM105A ■ NDF9401 


J201 


* 


J201 


FM1106A ■ NDF9401 


J202 


* 


J202 


FM1107A ■ NDF9402 


J203 


* 


J203 


FM1108A ■ NDF9403 


J270 


* 


J270 


FM1109A ■ NDF9405 


J271 


* 


J271 


FM1110A ■ 2N3957 


J300 




J300 


FM1111A ■ 2N3958 


J304 




J 304 


FM3954 • 2N3954 


J305 


* 


J305 


FM3954A • 2N3954A 


J401 


* 


J401 


FM3955 • 2N3955 


J402 


* 


J402 


FM3955A • 2N3955A 


J403 


* 


J403 


FM3956 • 2N3956 


J404 


* 


J404 


FM3957 • 2N3957 


J405 


* 


J405 


FM3958 • 2N3958 


J406 


* 


J406 


FT0654A ■ 2N3824 


J410 


* 


J410 


FT0654B ■ 2N3824 


J411 




J41 1 


FT0654C ■ 2N4221 


J412 


* 


J412 


FT3820 • 2N3820 


J1401 


* 


J1401 


IMF3954 • 2N3954 


J 1402 


* 


J1402 


IMF3954A • 2N3954A 


J 1403 


• 


J1403 


IMF3955 • 2N3955 


J 1404 




J 1404 


IMF3955A • 2N3955A 


J1405 


* 




IMF3956 • 2N3956 


J1406 


* 


J 1406 


IMF3957 • 2N3957 


KE3684 


• 


PN3684 


IMF3958 • 2N3958 


KE3685 


• 


PN3685 


IT100 ■ 2N5115 


KE3686 


• 


PN3686 


IT101 ■ 2N5116 


KE3970 


• 


PN4391 


IT108 • 2N5486 


KE3971 


• 


PN4392 


IT109 • 2N5397 


KE3972 


• 


PN4393 


ITE3066 ■ 2N4340 


KE4091 


• 


PN4091 


ITE3067 ■ 2N4338 


KE4092 


• 


PN4092 


ITE3068 ■ 2N4338 


KE4093 


• 


PN4093 


ITE4117 • 2N4117 


KE4220 


• 


PN4220 


ITE4118 • 2N4118 


KE4221 


• 


PN4221 


ITE4119 • 2N4119 


KE4222 


• 


PN4222 


ITE4338 • 2N4338 


KE4223 


• 


PN4223 


ITE4339 • 2N4339 


KE4224 


• 


PN4224 


ITE4340 • 2N4340 


KE4391 


• 


PN4391 


ITE4341 • 2N4391 


KE4392 


• 


PN4392 


ITE4391 * PN4391 


KE4393 


• 


PN4393 


ITE4392 * PN4392 


KE4416 


• 


PN4416 


ITE4393 • PN4393 


KE4856 


• 


PN4856 


ITE4416 • PN4416 


KE4857 


• 


PN4857 


ITE4867 ■ PN3686 


KE4858 


• 


PN4858 


ITE4868 ■ PN3685 


KE4859 


• 


PN4859 


ITE4869 ■ PN3684 


KE4860 


* 


PN4860 


1 1 0R * 1 1 0R 


KE4861 




PN4861 


J109 * J109 


KE5103 




2N5952 


J110 * J110 


KE5104 




2N5953 


Jill * J111 


KE5105 




PN4416 


J112 * J112 


MFE2000 




2N4416 


J113 * J113 


MFE2001 




2N4416 



m 
—i 



o 

c/> 

0) 

3J 
O 

i 

o 

C 

a 



37 



JFET Cross Reference Guide (continued) 










NATIONAL 




RPPI APPMFWT 


NATIONAL 


INDUSTRY TYPE 


REPLACEMENT 




INDUSTRY TYPE 


PART 


NUMBER 


CODE 


PART 
NUMBER 


NUMBER 


uuuc 


NUMBER 


MFE2004 


■ 


2N4393 


NF532 


, 


2N3822 


MFE2005 


■ 


2N4392 


NF533 


m 


2N3821 


MFE2006 


■ 


2N4391 


NF580 


s 


2N5432 


MFE2007 


■ 


2N4857 


NF581 


. 


2N5432 


MFE2008 


■ 


2N4391 


NF582 




2N 5434 


MFE2009 


■ 


2N4856 


NF583 




2N5434 


MFE2010 


■ 


2N4856 


NF584 


a 


2N5432 


MFE2011 


■ 


2N5433 


NF585 


a 


2N5433 


MFE2012 


■ 


2N5433 


NF4302 


a 


PN4302 


MFE2093 


■ 


2N3687 


NF4303 


a 


PN4303 


MFE2094 


■ 


2N3686 


NF4304 


. 


PN4304 


MFE2095 


■ 


2N3685 


NF4445 


« 


2N5432 


MFE2133 


■ 


2N4392 


NF4446 


a 


2N5433 


MFE4007 


■ 


2N2608 


NF4447 


a 


2N5432 


MFE4008 


■ 


2N2608 


NF4448 


a 


2N5433 


MFE4009 


■ 


2N3329 


NF5101 


« 


NF5101 


MFE4010 


■ 


2N3330 


NF5102 




NF5102 


MFE4011 


■ 


2N3330 


NF5103 


* 


NF5103 


MFE4012 


■ 


2N3331 


NF5163 


a 


2N5163 


MPF102 


* 


MPF102 


NF5457 


. 


2N5457 


MPF103 


* 


MPF103 


NF5458 




2N5458 


MPF104 


* 


MPF104 


NF5459 


. 


2N5459 


MPF105 


* 


MPF105 


NF5485 


a 


2N5485 


MPF106 


* 


MPF106 


NF5486 


a 


2N 5486 


MPF107 


* 


MPF107 


NF5555 


a 


2N5555 


MPF108 


* 


MPF108 


NF5638 


a 


2N5638 


MPF109 


* 


MPF109 


NF5639 


a 


2N5639 


MPF111 




MPF111 


NF5640 


a 


2N5640 


MPF112 


* 


MPF112 


NF5653 


a 


2N5653 


MPF161 


a 


2N5461 


NF5654 


. 


2N5654 


MPF256 


• 


J211 


NPD5564 




NPD5564 


MPF820 


■ 


J309 


NPD5565 




NPD5565 


MPF970 


a 


P1086E 


NPD5566 


* 


NPD5566 


MPF971 


a 


P1087E 


NPD8301 


* 


NPD8301 


MPF4391 


a * 


PN4391 


NPD8302 


* 


NPD8302 


MPF4392 


* 


PN4392 


NPD8303 


» 


NPO8303 


MPF4393 


* 


PN4393 


NPD9801 


* 


NPD9801 


NDF9401 


* 


NDF9401 


NPD9802 


* 


NPD9802 


NDF9402 


* 


NDF9402 


NPD9803 


* 


NPD9803 


NDF9403 


• 


NDF9403 


P1069E 






NDF9404 




NDF9404 


P1086E 


* 


P1086E 


NDF9405 


* 


NDF9405 


P1087E 


• 


P1087E 


NDF9406 


* 


NDF9406 


P1117E 


CF 




NDF9407 


* 


NDF9407 


P1118E 


CF 




NDF9408 


* 


NDF9408 


P1119E 


CF 




NOF9409 


* 


NDF9409 


PF510 


• 


PN4392 


NDF9410 


* 


NDF9410 


PF511 


• 


PN4392 


NF500 


• 


2N4224 


PF5101 


» 


PF5101 


NF501 




2N4224 


PF5102 


# 


PF5102 


NF506 


• 


2N3823 


PF5103 


* 


PF5103 


NF510 


* 


2N4092 


PN3684 


* 


PN3684 


NF520 




OPAAOIA 


DMOKQr 

riMoooo 




PN3685 


NF521 


a 


2N4220 


PN3686 


* 


PN3686 


NF522 


a 


2N4224 


PN3687 


* 


PN3687 


NF523 


a 


2N4220 


PN4091 




PN4091 


NF530 




2N3822 


PN4092 


* 


PN4092 


NF531 


a 


2N3821 


PN4093 




PN4093 



38 



JFET Cross Reference Guide (continued) 



INDUSTRY TYPE 
NUMBER 



REPLACEMENT 
CODE 



NATIONAL 
PART 
NUMBER 



INDUSTRY TYPE 
NUMBER 



REPLACEMENT 
CODE 



NATIONAL 



PN4220 




• 


r»M a ion 

PN4220 


TD590bA 






tm cone 
ztNbyUb 


PN4221 






PN4221 


t Pi com 

i ubyu/ 








PN4222 




* 


PN4222 


i ubyu/ a 






OMcnm 

^Nbyu/ 


PN4223 




* 


DM A Oil 

PN422J 


Tncono 

t uoyuo 






QM CQfiQ 

zNbyuo 


PN4224 




* 


nM/i oo a 

PN4224 


i ubyuoA 






om cono 

^Nbyuo 


PN4302 




* 


dm a orn 
PN4JU2 


i ubyuy 






zrjbyuy 


PN4303 








i ubyuyA 






zN&yuy 


PN4304 




* 


DM/1 ICiA 

rN4oU4 


TD591 1 






OMCQ1 1 


PN4342 




* 


DM A ")A 1 


Tncn 1 1 a 
l Uby I I A 






OMCQi 1 

zPJby i i 


PN4343 




■ 


P1 087 E 


TD591 2 






zNby i z 


PN4360 




* 


DM A OCA 


TD591 2A 






OMcn 1 i 
2N5912 


PN4391 




• 


DM A on 1 


TIS25 




N 




PN4392 




* 


DM A ono 


TIS26 




N 




rrsj4jyj 




• 


DM/1 QQO 


TIS27 




N 




rlM44 lb 




* 


DM A A A d 
rlM'44 1 b 


TIS34 




* 


IMC A OC 

/l>Jb4ob 


DM A O C C 




* 


r IM4obb 


TIS41 






OM /I O CO 

ZN4oby 


KN48b/ 




* 


DM /I OC7 

rN4ob/ 


TIS42 






DM A OflO 


DM /lOCO 




* 


DM/IOCQ 

rl\l4obo 


T!S58 




* 


TIS58 


HN4oby 




* 


DM A ocn 
rl\)4oby 


TIS59 






TIS59 


dm a ocn 

r'N4obU 




* 


DM a ocn 


TIS68 




N 




PN4861 




# 


dm or 1 


TIS69 




N 




r*ft irATi 

PN5033 




* 


PN5033 


TIS70 




N 




PN5163 






PN5163 


TIS73 






TIS73 


SU2078 




• 


2N3955 


TIS74 






TIS74 


SU2079 




• 


2N3956 


TIS75 






TIS75 


SU2080 








TIS78 




N 




SU2081 








TIS79 




N 




SU2098 






2N3954 


TIS88A 




* 


2IM5486 


SU2098A 






2N3954 


U1 10 






2N5020 


SU2098B 






2N3954A 


U1 12 




* 


2N4381 


SU2099 






2N3955A 


U1 14 






2N5020 


SU2099A 






2N3955A 


U133 






2N5020 


SU2365 






U401 


U146 




* 


Oft i r AOA 

2N5020 


SU2365A 






U401 


U147 




* 


2N5020 


SU2366 






U402 


U148 




* 


Oft 1 oooo 

2 N 2608 


SU2366A 






U402 


U149 




* 


2N2609 


SU2367 






U403 


U168 




* 


2N2608 


SU2367A 






U403 


U182 




* 


2N4857 


SU2368 






U404 


U183 




* 


2N3823 


SU2368A 






U404 


U184 




* 


2N4416 


SU2369 






U405 


U197 




* 


2N4338 


SU2369A 






U405 


U198 




* 


2N4340 


pi 1 o A 1 A 

SU2410 






U424 


U199 




* 


2N4341 


SU241 1 






U425 


U200 




* 


2N4393 


SU2412 






U426 


U201 




* 


2N4392 


TD5452 






2N5452 


U202 




* 


2N4391 


TD5453 






2N5453 


U231 






U231 


TD5454 








1 (OOO 








TD5902 






2N5902 


U233 






U233 


TD5902A 






2N5902 


U234 






U234 


TD5903 






2N5903 


U235 






U235 


TD5903A 






2N5903 


U240 






2N5432 


TD5904 






2N5904 


U241 






2N5433 


TD5904A 






2N5904 


U242 






2N5432 


TD5905 






2N5905 


U243 






2N5433 


TD5905A 






2N5905 


U244 




N 




TD5906 






2N5906 


U248 




* 


2N5902 



o 

0) 

3) 

<t> 
— ♦« 

(D 

3 

O 
<D 

O 



Q. 



39 



Ml IMDFP 






PAH i 
NUMBER 


NIIMRFR 


CODE 


fAK i 

NUMBER 


U248A 




* 


2N5906 


U1897E 


• 


U1897E 


U249 




* 


2N5903 


U1898E 


• 


U1898E 


U249A 




* 


2N5907 


U1899E 


a 


U1899E 


U250 




* 


2N5904 


U1994E 


a 


PN4416 


U250A 




* 


2N5908 


U2047 


a 


PN4416 


U251 




* 


2N5906 


UC155 


■ 


2N4416 


U251A 




* 


2N5909 


UC200 


■ 


2N4393 


U252 




* 


2N5911 


UC201 


■ 


2N4416 


U253 




* 


2N5912 


UC210 


a 


2N3822 


U254 




* 


2N4859 


UC220 


■ 


2N4220 


U255 




* 


2N4860 


UC241 


■ 


2N3822 


U256 




* 


2N4861 


UC250 




2N4391 


U257 




• 


U257 


UC251 


• 


2N4392 


■U266 




N 




UC400 


■ 


2N2609' 


U280 




• 


2N3954 


UC401 


a 


2N5019 


U281 




• 


2N3954 


UC410 


■ 


2N2609 


U282 




• 


2N3955 


UC420 


■ 


2N3329 


U283 




• 


2N3955 


UC588 


■ 


2N4416 


U284 




• 


2N3956 


UC703 


■ 


2N3822 


U285 




• 


2N3957 


UC705 


■ 


2N3824 


U290 




N 




UC707 


■ 


2N4391 


U291 




N 




UC714 


■ 


2N4416 


U300 




■ 


U304 


UC734 


a 


2N4416 


U301 




* 


U301 


UC734E 


a 


PN4416 


U304 




• 


2N5114 


UC755 


a 


2N4391 


U305 




• 


2N5116 


UC756 


a 


2N4224 


U306 




• 


2N5117 


UC805 


a 


2N3331 


U308 




* 


U308 


UC807 


a 


2N4861 


U309 






U309 


UC814 


a 


2N3331 


U310 




* 


U310 


UC851 


a 


2IM2608 


U311 




• 


U311 


UC854 


CF 




U312 




* 


U312 


UC855 


CF 




U320 


• 


* 


U320 


UC2139 


CF 




U321 




* 


U321 


UC2147 


CF 




U322 




* 


U322 


UC2148 


CF 




U328 




N 




UC2149 


CF 




U329 




N 




VCR2N 




2N4092 


U330 




N 




VCR3P 


a 


2N5115 


U331 




N 




VCR4N 


a 


2N4341 


U350 




# 


U350 


VCR5P 


a 


2N3331 


U401 




# 


U401 


VCR7N 


a 


2N4119 


U402 




* 


U402 








U403 






U403 








U404 






U404 








U405 




* 


U405 








U406 




* 


U406 








U421 




* 


U421 








U422 




* 


U422 








U423 




* 


U423 








U424 




* 


U424 








U425 




* 


U425 








U426 




* 


U426 








U430 




* 


U430 








U431 




* 


U431 








U1714 




• 


2N4340 








U1715 




N 










U1837E 




• 


2N5486 









40 



BIPOLARS 



JFET'S 



41 42 43 44 45 46 47 49 



50 90 92 



O 

a 

c 

HI 

a 



Preamplifiers 

> 500 MHz 

> 500 MHz with AGC 
200-500 MHz 
200-500 MHz with AGC 
50-250 MHz 

50-250 MHz with AGC 
20-120 MHz 



Mixers 

Input > 500 MHz 
Input 200-500 MHz 
Input 50-250 MHz 
Input 20-120 MHz 



Loc Osc 

> 500 MHz Mech. Tuned 

> 500 MHz Varactor 
200-500 MHz Mech. Tuned 
200-500 MHz Varactor 
50-250 MHz 

20-120 MHz 





IF Amps 

< 75 MHz 

< 15 MHz 

< 75 MHz with AGC 

< 15 MHz with AGC 

< 75 MHz Last Stage 

< 15 MHz Last Stage 



Special Uses 

200-500 MHz < 1.0 mA Bias 
50-250 MHz < 1.0 mA Bias 
200-500 MHz 5-15 mA Linear IF 
50-250 MHz 5-15 mA Linear IF 
< 120 MHz/20 mA Wideband RF 
VHF Freq. Generator and/or 
Multiplier to 75 mW Levels 



41 



Transistors NPN GPA Devices 



100 mA 
80 mA 
40 mA 
30 mA 

CONTINUOUS 
OPERATION 20 mA 
TYPICAL 

COLLECTOR 15 mA 
CURRENT 15 mA 

10 mA 

8 mA 
6 mA 
2 mA 



P37 GPA-AUDIO 
200MHz 
NSDU01 DW 



P09 AUDIO GPA 



P14 GPA 

200 MHz 
MPS6560 P 
BFY 50 MC 



P13 GPA/SW 
350 MHz 
2N4400 P 



P20 GPA/SW 
350 MHz 

2N2219A/22A MC 

P19 GPA/SW 
350 MHz 
2N4401 P 



P38 GPA-AUDIO 
DRIVER 200 MHz 
NSDU06 DW 

P12 GPA 

130 MHz 
2N3019 MC 
2N3700 MC 



P15 HIGH VOLTAGE 
VIDEO 170 MHz 
BF257/8/9 MC 

P08 GPA-HIGH VOLTAGE 
DRIVER 200 MHz 
2N3501 MC 



P48 HIGH VOLTAGE 
VIDEO DRIVER 
80 MHz 
SE7056 MC 
SP7056 DW 



P43 RF-AMP 

900 MHz 

2N918 MC 

MP53563 P 

2N5770 P 

P44 RF-AGC 
550 MHz 
SE5020 MC 
MPS6560 P 

P41 RF-AGC 
700 MHz 
BF180/BF200 
MPSH08 



P27 RF-GPA 
500 MHz 
2N915 MC 
MPSA20 P 
P49 RF-GPA 
600 MHz 
MPSH20 
P47 RF-IF 
1000 MHz 
PE30308 P 
MPSH24 P 
P42 RF-VHF/UHF 
1000 MHz 
2N5179 MC 
MPSH10P 

P45 RF-AGC 
500 MHz 
SE5055 MC 
MPSH32 P 



P46 RF-IF 
450 MHz 
PE5025 P 



P23 GPA/S . 
500 MHz 
2N3903/4 P . 
I 1 



P39 GPA-HIGH 
VOLTAGE DRIVER 
NSDU07 DW 



P48 HIGH VOLTAGE 
VIDEO DRIVER 
70 MHz 
SE7057 MC 



P16 GPA-HIGH 
VOLATAGE 220 MHz 
2N5551 P 



I P04 LOW 

■ LEVEL/LOW 
I NOISE AMP 
' 350 MHz 
I 2N2925 P 
1 BC107 MC 



I 



P07 LOW 

LEVEL/LOW NOISE 
AMP 140 MHz 
2N5088 P 
2N930 MC 



15 V 20 V 25 V 30 V 35 V 40 V 45 V 



60 V 



80 V 



100 V 



120 V 



220 V 



300 V 



P - Plastic (TO-92) 
MC - Metal Can 
DW - Durawatt 



COLLECTOR BREAKDOWN VOLTAGE 
BVCEO - 



15 mA 



10 mA 



CONTINUOUS 

OPERATION 

TYPICAL 

COLLECTOR 

CURRENT 



2 mA 



8 mA 



6 mA 



P - Plastic (TO-92) 
MC - Metal Can 
OW - Durawatt 



P27 RF-GPA 
500 MHz 
2N915 MC 
MPSA20 P 



P49 RF-GPA 
600 MHz 
MPSH20 



P46 RF-IF 
450 MHz 
PE5025 P 



P43 RF-AMP 
900 MHz 
2N918 MC 
MP53563 P 
2N5770 P 



P44 RF-AGC 
550 MHz 
SE5020 MC 
MPS6560 P 



P47 RF-IF 
1000 MHz 
PE30308 P 
MPSH24 P 



P23 GPA/S 
500 MHz 
2N3903/4 P 



P42 RF-VHF/UHF 
1000 MHz 
2N5179 MC 
MPSH10 P 



P41 RF-AGC 
700 MHz 
BF180/BF200 
MPSH08 



P45 RF-AGC 
500 MHz 
SE5055 MC 
MPSH32 P 



15 V 20 V 25 V 30 V 35 V 40 V 45 V 



60 V 



COLLECTOR BREAKDOWN VOLTAGE 
BV CE0 ^ 



saojAea ju NdN sjo 4 S|Subji 



Transistors PNP GPA Devices 



100 mA 


P77 GPA-AUDKD 
200MHz 
NSDU51 DW 






80 mA 
40 mA 
30 mA 

CONTINUOUS 
OPERATION 20 mA 


rw urWoW 

P°N90 M 12 2 P P63 GPA/SW 
PN9012 P 300 MHz 

2N4402/3 P 
2N2905/7A MC 


P78 GPA-AUDIO 
DRIVER 200 MHz 
NSDU56 DW 

P67 GPA/SW 
200 MHz 
2N4033 




TYPICAL 

COLLECTOR „ mA 
CURRENT 1bmA 

10 mA 


P69 GPA/SW 
450 MHz 
2N3905/6 P 
P66 GPA/SW 
600 MHz 
2N390S/6 P 




P79 GPA-HIGH 
VOLTAGE DRIVER 
NSDU57 DW 


8 mA 

6 mA 
2 mA 


P71 LOW 

NOISE AMP 500 MHz 
BC177 

80251 P62 LOW 

LEVEL/LOW 

NOISE AMP 120 MHz 

2N5086 P 


P74 GPA-HIGH 

VOLTAGE 200 MHz 

2N5401 P73 GPA HIGH 

VOLTAGE 225 MHz 
2N3634 MC 




-25 V -35 V -40 V -60V 


-80 V 


-120 V -140 V 


P - Plastic (TO-92) 
MC - Metal Can 
DW - Durawatt 




COLLECTOR BREAKDOWN VOLTAGE 
BV CEO "*~ 



1500 mA 



1000 mA 



MAXIMUM 750 mA 
SURVIVABLE 
COLLECTOR 
CURRENT 

SATURATED 500 mA 
MODE 



300 mA 



150 mA 



P70 HSS 40 V 
PNP 2N3467 MC 



P25 HSS 30 V 
NPN 2N3724/5 MC 
2N4014 MC 



P12 GPA/SW 
NPN 80 V 
2N6019 MC 
PE3568 P 



P22HSS15V 
NPN 2N3013 MC 
MPS3646 P 



P64 12 V 

PNP 2N2894A MC 
PE4313 P 



P21 HSS 15 V 
NPN 2N2369A MC 
MPS2369 P 
P6S HSS 12 V 
PNP 2N4208 MC 
MPS3640P 



P69 GPA/SW 
PNP 40 V 
2N3257A MC 
P23 GPA/SW 
NPN 40 V 
2N3903/4 P 
NS3904 MC 



P67 GPA/SW 
P13 GPA/SW ™P 60 V 
NPN 35 v 2N4033 MC 
2N4400 P MPS4356 P 
P19 GPA/SW 
NPN 40 V 
2N4401 P 
P20 GPA/SW 
NPN 40 V 
2N2219A/22A MC 
P63 GPA/SW 
PNP 40 V 
2N4402/3 P 
2N2905/7A MC 



P66 GPA/SW 
PNP 40 V 

2N3905/6 P 
NS3906 MC 



200 ns 



GPA/SW - General Purpose 
HSS - High Speed Switch 
P - Plastic (TO-92) 
MC - Metal Can 



maximum t ff 

see data book for circuit conditions 



6uiipuMS paads l|6|H JOj sjoisisubji 



Power Transistor Selector Guide 



HIGH VOLTAGE AND GENERAL PURPOSE 



DARLINGTON 



SWITCH MODE 



Planar 



Epi Base Mesa 



Planar 



Triple Epi Mesa 



400 



o 
> 

I 

O 

UJ 

o 
> 

£0 



300 



200 



140 
100 



80 



P-48 



60 



40 



P-36 



P-39/ 
P-79 




120 



P-38/ 
P-78 



P-37/ 
P-77 



P-2C/ 
P-3C 

P-2A 



P-2E/ 
P-3E 



P-4A/ 
P-5A 



P-4B/ 
P-5B 



P-4C/ 
P-5C 



7 A 



P-4G/ 
P-5G 



100 



80 



60 



40 



400 



P-05 



P-2J/ 
P-3J 



P-4K/ 
P-5K 



P-8A 



P-8B 
P-8C 



0.1A 



0.8A 



2A 



3A 



5A 



7A 



10A 



I 
I 

Package I 



TO-92 



TO-92+ 



TO-202 



0.6W 



1.2W 



10W 



1.2W 



15W 



25W 



I 



0.6W 



1.2W 



10W 



20W 



30W 



TO-126 I 

h 

TO-220 I 

h + + 

TO-3 III I 

■ L. I I Li 



I 



"t~ 



15A 20A 

I 
I 
I 

+■ 



1.5A 



6A 



7A 



10A 



15A 



I I I I I I 

4 + + 4 4 +- 

I I 

4 + + + . 

I i I l 

+— + + T- 



15W 



40W 



15W 



40W 



50W 



0.6W 
1.2W 
10W 



60W 



115W 



70W 



150W 



75W 



175W 



— t" 
I 



200W 



40W 



50W 



I 



60W 



120W 



60W 



125W 



175W 



Quote on Request 



PART 
NUMBER 




PART 
NUMBER 


PACKAGE 


PART 
NUMBER 


PACKAGE 


PART 
NUMBER 


PACKAGE 


PART 
NUMBER 


PACKAGE 


PART 
NUMBER 


PACKAGE 


PART 
NUMBER 


PACKAGE 


PART 
NUMBER 




2N3055 


TO-3 


2N5880 


TO-3 


92PE487 


92+ 


D41010 


TO-202 


D45H2 


TO-220 


NSDU10 


T0 202 


NSP587 


TO-220 


TIP30 


TO-220 


2N3713 


TO-3 


2N5881 


TO-3 


92PE4B8 


92+ 


D41D11 


TO-202 


D45H4 


TO-220 


NSDU45 


TO 202 


NSP688 


TO-220 


TIP30A 


TO-220 


2N3714 


TO-3 


2N5882 


TO-3 


92PE489 


92+ 


D41D13 


TO-202 


D45H5 


TO-220 


NSDU45A 


TO202 


NSP5B9 


TO-220 


TIP30B 


TO-220 


2N3715 


TO-3 


2N6034 


TO-126 


92PU01 


92+ 


D41D14 


TO-202 


D4SH7 


TO-220 


NSDU51 


TO202 


NSP590 


TO-220 


TIP30C 


TO-220 


2N3716 


TO-3 


2N6035 


TO-126 


92PU01A 


92+ 


D41E1 


TO-202 


045HB 


T0220 


NSDU51A 


T0 202 


NSP691 


TO-220 


TIP31 


TO-220 


2N3789 


TO-3 


2N6036 


TO-126 


92PU05 


92+ 


041E6 


TO 202 


D45H10 


TO-220 


NSOU52 


TO-202 


NSP592 


TO-220 


TIP31A 


TO-220 


2N379I 


TO-3 


2N6037 


TO-126 


92PU06 


92+ 


D41E7 


TO 202 


D45H11 


TO 220 


NSDU55 


TO 202 


NSP596 
NSP596 


TO-220 


TIP31B 


TO-220 


2N3792 


TO-3 


2N6038 


TO-126 


92PU07 


92+ 


D42C1 


TO-202 


MJE170 


TO 126 


NSDU56 


TO-202 


TO-220 


TIP31C 


TO-220 


2N4901 


TO-3 


2N6039 


TO-126 


92PU10 


92+ 


D42C2 


TO-202 


MJE171 


TO-126 


NSDU57 


TO-202 


NSP597 


TO-220 


TIP32 


TO-220 


2N4902 


T03 


2N6053 


TO-3 


92PU45 


92+ 


D42C3 


TO-202 


MJE172 


TO 126 


NSD36 


TO-202 


NSP598 


TO-220 


TIP32A 


TO-220 


2N4903 


TO-3 


2N6054 


TO-3 


92PU46A 


92+ 


D42C4 


TO-202 


MJE180 


TO-126 


NS036A 


TO-202 


NSP599 


TO-220 


TIP32B 


TO-220 


2N4904 


TO-3 


2N6055 


TO-3 


92PU51 


92+ 


D42C5 


TO-202 


MJE181 


TO-126 


NS036B 


TO-202 


NSP600 


TO-220 


TIP32C 


TO-220 


2N4905 




2N6056 




92PU5 1 A 








MJE182 








NSP601 


TO-220 


TIP41 


TO-220 


2N4906 


TO-3 


2N6099 


TO-220 


92PU55 


92+ 


D42C7 


TO-202 


MJE340 


TO-126 


NSD102 


TO-202 


NSP602 


TO 220 


TIP41A 


TO-220 


2N4907 


TO-3 


2N6101 


TO-220 


92PU66 


92+ 


D42C8 


TO 202 


MJE341 


TO-126 


NSD103 


TO-202 


NSP695 


TO-220 


TIP41B 


TO220 


2N4908 


TO-3 


2N6107 


TO-220 


92PU57 


92+ 


D42C9 


TO-202 


MJE344 


TO 1 26 


NSO104 


TO-202 


NSP695A 


TO-220 


TIP41C 


TO-220 


2N4909 


TO-3 


2N6109 


TO-220 


92PU391 


92+ 


D42C10 


TO-202 


MJE370 


TO-126 


NSD105 


TO-202 


NSP696 


TO220 


TIP42 


TO-220 


2N4913 


TO-3 


2N61 1 1 


TO-220 


92PU392 


92+ 


D42C11 


TO-202 


MJE371 


TO-126 


NSD106 


TO-202 


NSP696A 


TO-220 


TIP42A 


TO-220 


2N4914 


TO-3 


2N6121 


TO-220 


92PU393 


92+ 


D42C12 


TO-202 


MJE520 


TO-126 


NSD123 


TO-202 


NSP697 


TO-220 


TIP42B 


TO-220 


2N4915 


TO-3 


2N6122 


TO-220 


BD344 


TO-126 


D43C1 


TO-202 


MJE521 


TO-126 


NSD127 


TO-202 


NSP697A 


TO 220 


TIP42C 


TO-220 


2N4918 


TO- 126 


2N6123 


TO-220 


BD345 


TO-126 


D43C2 


TO 202 


MJE700 


TO-126 


NSD128 


TO-202 


NSP698 


TO-220 


TIP61 


TO 220 


2N4919 


TO-126 


2N6124 


TO-220 


BD346 


TO-220 


D43C3 


TO-202 


MJE701 


TO-126 


NSD129 


TO 202 


NSP698A 


TO 220 


TIP61A 


TO-220 


2N4920 


TO- 1 26 


2N6125 


TO-220 


BD347 


TO-220 


D43C4 


TO-202 


MJE702 


TO-126 


NSD131 


TO-202 


NSP699 


TO-220 


TIP61B 


TO-22U 


2N4921 


TO-126 


2N6126 


TO-220 


BD348 


TO 126 


D43C5 


TO 202 


MJE703 


TO 1 26 


NSD132 


TO-202 


NSP699A 


TO 220 


TIP61C 


TO-220 


2N4922 


TO-126 


2N6129 


TO-220 


BD349 


TO-126 


D43C6 


TO-202 


MJE710 


TO- 1 26 


NSD133 


TO-202 


NSP2010 


TO-220 


TIP62 


TO-220 


2N4923 


TO-126 


2N6130 


TO-220 


BD350 


TO-3 


D43C7 


TO-202 


MJE71 1 


TO-126 


NSD134 


TO 202 


NSP2011 


TO-220 


TIP62A 


TO 220 


2N5067 


TO-3 


2N6131 


TO-220 


BD351 


TO-3 


D43C8 


TO-202 


MJE712 


TO-126 


NSD135 


TO 202 


NSP2020 


TO-220 


TIP62B 


TO-220 


2N5068 


TO-3 


2N6132 


TO-220 


D40C1 


TO-202 


D43C9 


TO-202 


MJE720 


TO 1 26 


NSD151 


TO-202 


NSP2021 


TO-220 


TIP62C 


TO-220 


2N5069 


TO-3 


2N6133 


TO-220 


D40C2 


TO-202 


D43C10 


TO-202 


MJE721 


TO- 1 26 


NSD152 


TO-202 


NSP2090 


TO-220 


TIP110 


TO220 


2N5190 


TO-126 


2N6134 


TO-220 


D40C3 


TO-202 


D43C11 


TO-202 


MJE722 


TO-126 


NSD153 


TO-202 


NSP2091 


TO 220 


TIP111 


TO-220 


2N5191 


TO-126 


2N6226 


TO-3 


D40C4 


TO-202 


D43C1 2 


TO 202 


MJE800 


TO-126 


NSD154 


TO-202 


NSP2092 


TO-220 


TIP112 


TO-220 


2N5192 


TO-126 


2N6227 


TO-3 


040C5 


TO-202 


D44C1 


TO 220 


&JE801 


TO 1 26 


NSD202 


TO-202 


NSP2093 


TO-220 


TIP116 


TO-220 


2N5193 


TO-126 


2N6228 


TO-3 


D40C7 


TO-202 


D44C2 


TO 220 


MJE802 


TO-126 


NSD203 


TO-202 


NSP2100 


TO-220 


TIP116 


TO-220 


2N5194 


TO-126 


2N6229 


TO-3 


D40C8 


TO-202 


D44C3 


TO-220 


MJE803 


TO-126 


NSD204 


TO-202 


NSP2101 


TO-220 


TIP117 


TO-220 


2N5195 


TO-126 


2N6230 


TO-3 


D40D1 


TO-202 


D44C4 


TO 220 


MJE3439 


TO-126 


NSD205 


TO-202 


NSP2102 


TO-220 


TIP120 


TO-220 


2N5293 


TO-220 


2N6231 


TO-3 


D40D2 


TO-202 


D44C5 


TO-220 


MJE3440 


TO- 1 26 


NSD206 


TO-202 


NSP2103 


TO-220 


TIP121 


TO-220 


2N5294 


TO-220 


2N6288 


TO-220 


D4003 


TO-202 


D44C6 


TO-220 


MJ900 


TO-3 


NSD457 


TO-202 


NSP2370 


TO-220 


TIP122 


TO 220 


2N5295 


TO-220 


2N6290 


TO-220 


D40D4 


TO-202 


D44C7 


TO-220 


MJ901 


TO-3 


NSD458 


TO-202 


NSP2480 


TO-220 


TIP125 


TO-220 


2N5296 


TO220 


2N6292 


TO-220 


D40D5 


TO-202 


D44C8 


TO 220 


MJ1000 


TO-3 


NSD459 


TO-202 


NSP2481 


TO220 


TIP126 


TO-220 


2N5297 


TO 220 


2N6386 


TO-220 


D40O7 


TO-202 


D44C9 


TO-220 


MJ1001 


TO-3 


NSE457 


TO-202 


IMSP2482 


TO-220 


TIPI27 


TO 220 


2N5298 


TO 220 


2N6486 


TO-220 


D40D8 


TO-202 


O44C10 


TO-220 


MJ2801 


TO-3 


NSE458 


TO-202 


NSP2483 


TO 220 


TIP130 


TO-220 


2N6490 


TO-220 


2N6487 


TO-220 


D40010 


TO-202 


044C11 


TO 220 


MJ2840 


TO-3 


NSE459 


TO 202 


NSP2490 


TO-220 


TIP131 


TO 220 


2N5492 


TO-220 


2N 6488 


TO-220 


D40D 1 1 


TO-202 


D44C12 


TO-220 


MJ2841 


TO-3 


NSP41 


TO 220 


NSP2491 


TO-220 


TIP132 


TO-220 


2N5494 


TO-220 


2N6489 


TO-220 


D40013 


TO-202 


D44H1 


TO 220 


MJ2901 


TO-3 


NSP41A 


TO-220 


NSP2520 


TO-220 


TIP135 


TO-220 


2N5496 


TO-220 


2N6490 


TO-220 


D40D14 


TO-202 


044H2 


TO-220 


MJ2940 


TO-3 


NSP41B 


TO-220 


NSP2955 


TO-220 


TIP136 


TO-220 


2N5632 


TO-3 


2N6491 


TO-220 


D40E1 


TO-202 


044H4 


TO-220 


MJ2941 


TO-3 


NSP41C 


TO 220 


NSP3055 


TO-220 


TIP137 


TO-220 


2N5633 


TO-3 


2N6548 


TO- 202 


D40ES 


TO-202 


D44H5 


TO 220 


MJ2955 


TO-3 


NSP42 


TO 220 


NSP5974 


TO-220 


TN2102 


92+ 


2N6634 


TO-3 


2N6549 


TO-202 


D40E7 


TO-202 


D44H7 


TO-220 


NCBJ14 


TO 1 26 


NSP42A 


TO-220 


NSP5975 


TO-220 


TN2218A 


92+ 


2N5655 


TO 126 


2N6551 


TO-202 


D40N1 


TO-202 


D44H8 


TO-220 


NCBJ35 


TO-126 


NSP428 


TO-220 


NSP5976 


TO-220 


TN2219 


92+ 


2N5656 


TO-126 


2N6552 


TO-202 


D40N2 


TO 202 


D44H10 


TO-220 


NCBS14 


TO- 39 


NSP42C 


TO-220 


NSP5977 


TO-220 


TN2219A 


92+ 


2N5657 


TO-126 


2N6553 


TO-202 


040N3 


TO-202 


H44H11 


TO-220 


NCBS35 


T039 


NSP105 


TO-220 


NSP5978 


TO-220 


TN2904A 


92+ 


2N5758 


TO-3 


2N6554 


TO-202 


D40N4 


TO-202 


D46C1 


TO-220 


NCBT13 


T092 


NSP205 


TO 220 


NSP5979 


TO-220 


TN2905 


92+ 


2N5759 


T03 


2N6555 


TO-202 


D40N5 


TO-202 


D45C2 


TO-220 


NCBV14 


TO-202 


NSP575 


TO220 


SE93O0 


TO-220 


TN2906A 


92* 


2N5760 


TO-3 


2N6556 


TO-202 


D40P1 


TO-202 


045C3 


TO-220 


NCBV35 


TO202 


NSP576 


TO 220 


SE930I 


TO-220 


TN3019 


92+ 


2N5872 


TO-3 


2N6669 


TO-3 


D40P3 


TO-202 


D45C4 


TO-220 


NC6W35 


TO 220 


NSP577 


TO220 


SE9302 


TO-220 


TN3020 


92+ 


2N5873 


TO-3 


2N6594 


TO-3 


D40P5 


TO202 


D45C5 


TO-220 


NCBX14 


92+ 


NSP578 


TO 220 


SE94O0 


TO-220 


TN3053 


92* 


2N5874 


TO-3 


92PE37A 


92+ 


D41D1 


TO-202 


D45C6 


TO220 


NSDU01 


TO-202 


NSP579 


TO-220 


SE940I 


TO-220 


TN4033 


92+ 


2N5875 


TO-3 


92PE37S 


92+ 


04102 


TO-202 


D45C7 


TO-220 


NSDU01A 


TO-202 


NSP580 


TO220 


SE9402 


TO-220 


TN4036 


92* 


2N6876 


TO-3 


92PE37C 


92+ 


D41D4 


TO-202 


D45C8 


TO 220 


NSDU02 


TO 202 


NSP581 


TO-220 


TIP29 


TO 220 


TN4037 


92+ 


2N5877 


TO-3 


92PE77A 


92+ 


D4105 


TO-202 


D45C9 


TO-220 


NSDU05 


TO-202 


NSP582 


TO-220 


TIP29A 


TO 220 






2N5878 


TO-3 


92PE77B 


92+ 


D41D7 


TO202 


D45C10 


TO-220 


NSDU06 


TO-202 


NSP5B5 


TO 220 


TIP298 


TO-220 






2N5879 


TO-3 


92PE77C 


92+ 


D41D8 


TO-202 


D45HT 


TO-220 



NSDU07 


TO-202 


NSP586 


TO-220 


TIP29C 


TO-220 







Buusn JaqmnN *JBd JOiSjSUBJi jaMO«j 



92+ Power Transistor Referenc 



jo 



PART NUMBER 


VCEO 


"C 




@ 


MAX VcE(SAT) 


PD 


fT 


PRO( 


NPN 


PNP 


(V) 


(Al 


MIN 


MAX 


IC (n»A) 


V C E (V) 


(V) @ l C ImAI 


(W) 


(MHz) 


(NPN/ 


TN2219 




30 


0.5 


100 


300 


150 


10 


0.4 


150 


1.2 


250 


19 










30 




500 


10 












TN3724 




30 


1 


60 


150 


100 


1 


0.2 


100 


1.2 


300 


25 










40 




300 


1 


0.32 


300 








92PU01 


92PU51 


30 


nml 


60 




100 


1 


0.5 


1000 


1.2 


50 


37/ 










55 




1000 


1 












TN2218A 




40 


0.5 


40 


120 


150 


10 


0.3 


150 


1.2 


250 


19 










25 




500 


10 












TN2219A 


TN2905 


40 


0.5 


100 


300 


150 


10 


0.3/0.4 


150 


1.2 


300 


19/ 










40 




500 


10 












TN3053 


TN4037 


40 


1 


50 


250 


150 


10 


1.4 


150 


1.2 


100 


12/ 


92PU01A 


92PU51A 


40 


2 


60 




100 


1 


0.5 


1000 


1.2 


50 


37/ 










55 




1000 


1 












92PU45 




40 


2 


25k 




200 


5 


1 


200 


1.2 


100 


05 










4k 




1000 


5 


1.5 


1000 








92PE37A 


92PE77A 


45 


2 


40 




500 


2 


0.5 


500 


1.2 


50 


38/ 


TN3725 




50 


1 


60 


150 


100 


1 


0.4 


300 


1.2 


300 


25 










40 




300 














92PU45A 




50 


2 


25k 




200 


5 


1 


200 


1.2 


100 


05 










4k 




1000 


5 


1.5 


1000 










TN2904A 


60 


0.5 


40 


120 


150 


10 


0.4 


150 


1.2 


200 


63 










40 




500 


10 














TN2905A 


60 


0.5 


100 


300 


150 


10 


0.4 


150 


1.2 


200 


63 










50 




500 


10 












92PE37B 


92PE77B 


60 


2 


40 




500 


2 


0.5 


500 


1.2 


50 


38/ 


92PU05 


92PU55 


60 


2 


20 




500 


1 


0.35 


250 


1.2 


50 


39/ 


TN2102 


TN4036 


65 


1 


40 


120 


150 


10 


0.5/0.65 


150 


1.2 


60 


12/ 










25 




500 


10 












TN3019 




80 


1 


100 


300 


150 


10 


0.2 


150 


1.2 


100 


12 


TN3020 




80 


1 


40 


120 


150 


10 


0.2 


150 


1.2 


100 


12 




TN4033 


80 


1 


100 


300 


100 


5 


0.15 


150 


1.2 


150 


67 


92PE37C 


92PE77C 


80 


'.' 2 


40 




500 


2 


0.5 


500 


1.2 


50 


38/ 


92PU06 


92PU56 


80 


2 


20 




500 


1 


0.35 


250 


1.2 


50 


39/ 


92PU07 


92PU57 


100 


2 


20 




500 


1 


0.35 


250 


1.2 


50 


39/ 


92PE487 




160 


0.1 


30 




30 


10 


1 


30 


1.2 


50 


48 


92PU391 




200 


0.1 


40 




10 


10 


2 


20 


1.2 


50 


48 


92PE488 




250 


0.1 


30 




30 


10 


1 


30 


1.2 


50 


48 


92PU392 




250 


0.1 


40 




10 


10 


2 


20 


1.2 


50 


48 


92PE489 




300 


0.1 


30 




30 


10 


1 


30 


1.2 


50 


48 


92PU393 




300 


0.1 


40 




10 


10 


2 


20 


1.2 


50 


48 


92PU10 




300 


0.1 


40 




30 


10 


0.75 


30 


1.2 


50 


48 




Note. Preferred part types are shaded. 



apmQ aouajajeu joiSjSue.ii jaMOd < 



TO-126 Power Transistor Reference Guide 



PART NUMBER 


I _ 
■C 


VqeO 


h F E ® 


MAX VcE(SAT) 


Pr\ 


■T 




NPN 


PNP 


(A) 


(V) 


MIN 


MAX 


l c (A) 


Vce (V) 


(V) @ l C (A) 


(W) 


(MHz) 


(NPN/PNP) 


MJE3440 




n i 
U.o 




40 


160 


0.02 


10 


0.5 


0.05 


1 R 
I O 


1 R 


36 


MJE3439 




n i 
u.o 


ocn 


40 


160 


0.02 


10 


0.5 


0.05 


15 


15 


36 


MJE341 




U.O 


1 Rn 


25 


200 


0.05 


10 


1 


0.05 




15 


36 


MJE344 




U.o 


9nn 
zuu 


30 


300 


0.05 


10 


1 


0.05 


in 


ifi 


36 


2N5655 




n r 

U.O 


zou 


30 


250 


0.1 


10 


1 


0.1 


ZU 


10 


36 


MJE340 




0.5 


300 


30 


240 


0.05 


10 






on 

ZU 




OR 
OO 


2N5656 




n r 
u.o 


inn 
JUU 


30 


250 


0.1 


10 


1 


0.1 


on 

ZU 


m 

1 u 


Ifi 
OD 


2N5657 




n k 
U.O 


OOU 


30 


250 


0.1 


10 


1 


0.1 


on 

ZU 


m 

IU 


Ifi 
OD 


MJE520 


MJE370 


1 

1 


•jn 
JU 


25 






1 






ZO 




op /op 

Z W Ov* 


2N4921 


2N4918 


1 
I 


4U 


20 


100 


0.5 


1 


0.6 


1 


in 

OU 


o 

o 


2C/3C 


2N4922 


2N4919 


1 


en 


20 


100 


0.5 


\ 


0.6 


1 


in 

OU 


o 
o 


op/or 


2N4923 


2N4920 


1 


on 
oO 


20 


100 


0.5 


1 


0.6 


1 


in 

OU 


o 

o 


op /op 


MJE720 


MJE710 


1 c 
1 .0 


4U 


40 




0.15 


1 


0.15 


0.15 


ZU 




07 /77 


BD345 


BD344 


1 .5 


bu 


40 


250 


0.2 


1 


0.4 


0.2 


on 

ZU 


en 
OU 


OQ/7Q 
OO/ /O 


MJE721 


MJE71 1 


1 .5 


en 

OU 


40 




0.15 


1 


0.15 


0.15 


on 

ZU 




OO/ / O 


BD349 


BD348 


1 .5 


on 
oU 


50 


250 


0.25 


1 


0.5 


0.25 


on 
zU 


cn 
OU 


10./7Q 

oy/ /y 


MJE722 


MJE712 


1 .5 


on 
oU 


40 




0.15 


1 


0.15 


0.15 


on 

ZU 




oy/ /y 


MJE180 


MJE170 


O 


yin 
4U 


50 


250 


0.1 


1 


0.3 


0.5 


I z.o 


■A 

OU 


17/77 

o/ / / / 


MJE181 


MJE171 


«a 
o 


cn 
OU 


50 


250 


0.1 


1 


0.3 


0.5 


I Z.O 


OU 


OO/ ' O 


MJE182 


MJE172 


3 


on 
OU 


50 


250 


0.1 


1 


0.3 


0.5 


I Z.O 


cn 
OU 


1Q/7Q 

oy / / y 


MJE521 


MJE371 


4 


40 


40 




0.1 


1 






40 




2C/3C 


2N5190 


2N5193 


4 


40 


25 


100 


1.5 


2 


0.6 


1.5 


40 


2 


2E/3E 


2N6037 


2N6034 


4 


40 


750 


15k 


2 


3 


2 


2 


40 




2J/3J 


2N5191 


2N5194 


4 


60 


25 


100 


1.5 


2 


0.6 


1.5 


40 


2 


2E/3E 


MJE800 


MJE700 


4 


60 


750 




1.5 


3 


2.5 


1.5 


40 




2J/3J 


MJE801 


MJE701 


4 


60 


750 




2 


3 


2.8 


2 


40 




2J/3J 


2N6038 


2N6035 


4 


60 


750 


15k 


2 


3 


2 


2 


40 




2J/3J 


MJE802 


MJE702 


4 


80 


750 




1.5 


3 


2.5 


1.5 


40 




2J/3J 


MJE803 


MJE703 


4 


80 


750 




2 


3 


2.8 


2 


40 




2J/3J 


2N5192 


2N519S 


4 


80 


20 


80 


1.5 


2 


0.6 


1.5 


40 


2 


2E/3E 


2N6039 


2N6036 


4 


80 


750 


15k 


2 


3 


2 


2 


40 




2J/3J 




± 



Note. Preferred part types are shaded. 



apmo aouajajay jojsisueji jaMOd 023-01 



TO-3 Power Transistor Reference 



PART NUMBER 


>C 


VCEO 


hfE © 


MAX VcE(SAT) 


PD 


*r 




NPN 


PNP 


(A) 


(V) 


MIN 


MAX 


IC (A) 


V C E (V) 


(V) @ 


IC (A) 


(W) 


(MHz) 




2N5067 


2N4901 


5 


40 


20 


80 


1 


2 


0.4 


1 


87.5 


4 




2N4913 


2N4904 


5 


40 


25 


100 


2.5 


2 


1 


2.5 


87.5 


4 




2N5068 


2N4902 


5 


60 


20 


80 


1 


2 


0.4 


1 


87.5 


4 




2N4914 


2N4905 


5 


60 


25 


100 


2 5 


2 


1 


2.5 


87.5 


4 




2N5069 


2N4903 


5 


80 


20 


80 


1 


2 


0.4 


1 


87.5 


4 




2N4915 


2N4906 


5 


80 


25 


100 


2.5 


2 


1 


2.5 


87.5 


4 




2N5758 


2N6226 


6 


100 


25 


100 


3 


2 


1 


3 


150 


1 




2N5759 


2N6227 


6 


120 


20 


80 


3 


2 


1 


3 


150 


1 




2N5760 


2N6228 


6 


140 


15 


60 


3 


2 


1 


3 


150 


1 




2N5873 


2N5871 


7 


60 


20 


100 


2.5 


4 


1 


4 


115 


4 




2N5874 


2N5872 


7 


80 


20 


100 


2.5 


4 




4 


115 


4 




2N6055 


2N6053 


6 


60 


750 


18,000 


4 


3 


2 1 2 - 


4 


100 


4 




MJ1000 


MJ900 


8 


60 


1000 




3 


3 


2 


3 


90 


4 




2N6056 


2N6054 


8 


80 


750 


18,000 


4 


3 


2 


4 


100 


4 




MJ1001 


MJ901 


8 


80 


1000 




3 


3 


2 


3 


90 


4 






2N4907 


10 


40 


20 


80 


4 


4 


0.75 


4 


150 


4 




2N3713 


2N3789 


10 


60 


25 


90 


1 


2 


1 


5 


150 


4 




2N3715 


2N3791 


10 


60 


50 


150 


1 


2 


0.8 


5 


150 


4 




MJ2840 


MJ2940 


10 


60 


20 


100 


3 


2 






150 


2 






2N4908 


10 


60 


20 


80 


4 


4 


0.75 


4 


150 


4 




2N5877 


2N5875 


10 


60 


20 


100 


4 


4 


1 


5 


150 


4 




2N3714 


2N3790 


10 


80 


25 


90 


1 


2 


1 


5 


150 


4 




2N3716 


2N3792 


10 


80 


50 


150 


i" \ ..i 


2 


0.8 


5 


150 


4 






2N4909 


10 


80 


20 


80 


4 


4 


0.75 


4 


150 


4 




2N5878 


2N5876 


10 


80 


20 


100 


4 


4 


1 


5 


150 


4 




MJ2841 


MJ2941 


10 


80 


20 


100 


4 


2 






150 


2 




2N5632 


2N6229 


10 


100 


25 


100 


5 


2 


1 


7.5 


150 


1 




2N5633 


2N6230 


10 


120 


20 


80 


5 


2 


1 


7.5 


150 


1 




2N5634 


2N6231 


10 


140 


15 


60 


5 


2 


1 


7.5 


150 


1 




2N6569 


2N6594 


12 


40 


15 


200 


4 


3 






100 


4 




MJ2801 


MJ2901 


15 


40 


15 


60 


8 


4 


1.5 


8 


115 


1 




2N3055 


MJ2955 


15 


60 


20 


70 


4 


4 


1.1 


4 


115 


2.5 




2N5881 


2N5879 


15 


60 


20 


100 


6 


4 


1 


7 


160 


4 




BD351 


BO350 


15 


80 


20 


100 


6 


2.5 


2 


6 


160 


4 




2N5882 


2N5880 


15 


80 


20 


100 


6 


4 


1 


7 


160 


4 






NPN Transistors 



2 



SATURATED SWITCHES 



Type No. 


Case 
Style 


v CBO 
(VI 
Min 


VCEO 
(V) 
Min 


V E BO 
(V) 
Min 


'CES 
>CBO 
(nAI 
Max 


a V CB 
S (V) 


h 

Min 


FE 
Max 


■ 'c 

(mA) 


& (VI 


v CE(satl 
(V) 
Max 


VBEIsatl 
& (V) 

Min Max 


<C 
(mA) 

(l B --l 


Cob 
(pF) 
Max 


«T 

(MHz) © 
Min Max 


'C 
(mA) 


«(offl 
(ns) 
Max 


Test 
Condition 


Process 
No. 


2N706 


TO-18 


25 


15 


5 


500 


15 


20 




10 


1 


0.6 


0.7 


0.9 


10 


6 


200 


10 


75 


2 


21 


2N706J 


TO-52 


25 


15 


5 


100 


15 


30 
20 
10 


120 


10 

1 

1 


1 
1 
1 


05 


0.7 


0.9 


10 


6 


200 700 


10 


75 


2 


21 


2N708 


TO-52 


40 


15 


5 


25 


20 


30 
15 


120 


10 
0.5 


1 
1 


0.4 


0.72 


0.8 


10 


6 


300 


10 






22 


2N743 


TO-52 




12 




1 uA 


20 


10 
20 
10 


60 


100 

10 

1 


1 

0.35 
0.25 




0.65 


0.85 
1.5 


10 
100 


5 


300 


10 


24 


1 


21 


2N744 


TO-52 


20 


12 


5 


1 mA 


20 


20 
40 
20 


120 


100 
10 

1 


1 

0.35 
0.25 




0.65 


0.85 
1.5 


10 
100 


5 


280 


10 


24 


1 


21 


2N753 


TO-52 


25 


15 


5 


500 


15 


40 


120 


10 


1 


0.6 


0.7 


0.9 


10 


5 


200 


10 


75 


2 


21 


iN834 


TO-52 


40 




5 


500 


20 


25 




10 


1 


0.25 




0.9 


10 


4 


350 10 


30 


2 


21 


2N2369 


TO 52 


40 


15 


4.5 


400 


20 


20 
40 


120 


100 
10 


2 
1 


0.25 


0.7 


0.85 


10 


4 


500 


10 


18 


1 


21 


2N2369A 


TO-52 


40 


15 


4.5 


30 


20 


20 
30 
40 
40 


120 


100 
30 
10 
10 


1 

0.4 
1 

0.35 


0.20 
0.25 

0.5 


0.7 


0.85 
1.5 

1 6 


10 

30 

100 


4 


500 


10 


18 


1 


21 


2N2369A 
J, JTX, JTXV 


TO-18 


40 


15 


4.5 


400* 


20 


20 
30 
40 
40 


120 
120 
120 
120 


100 
30 
10 
10 


1 

0.4 
1 

0.35 


0.2 
0.25 

0.5 


0.7 


0.85 
1.5 

1.6 


10 
30 

100 


4 


500 


10 


18 


1 


21 


2N3009 


TO-52 


40 


15 


4 


500* 


20 


15 
25 
30 


120 


300 
100 
30 


1 

0.6 
0.4 


0.18 
0.28 
0.5 


0.75 


0.95 

1.2 

1.7 


30 

100 

300 


5 


350 


30 


25 


3 


22 


2N3011 


TO-52 


30 


12 


5 


400" 


20 


12 
25 
30 


120 


100 

30 

10 


1 

0.4 
0.35 


0.2 

0.25 

0.5 


0.72 


0.85 

1.5 

1.6 


10 
30 
100 


4 


400 


20 


20 


4 


21 


2N3013 


TO-52 


40 


15 


5 


300' 


20 


15 

25 
30 


120 


300 
100 
30 


1 

0.5 
0.4 


0.18 
0.28 
0.5 


0.75 


0.95 

12 

1.7 


30 

100 

300 


5 


350 


30 


25 


3 


22 


2N3015 


TO-39 


60 


30 


5 


200 


30 


10 
30 


120 


300 
150 


0.7 
10 


0.4 
1.0 




1.2 

1.6 


150 
500 


8 


250 


50 


60 


5& 6 


25 


2N3252 


TO-39 


60 


30 


5 


500 


40 


25 
30 
30 


90 


1A 
500 
150 


5 
1 
1 


0.3 
0.5 
1.0 


0.7 


1.0 
1.3 
1.8 


150 
500 
1A 


12 


200 


50 


70 


7 


25 




SATURATED SWITCHES (Continued) 



Type No. 


Case 
Style 


VCES* 

VCBO 

(VI 
Min 


v CEO 
(V) 
Min 


V E80 
(VI 
Min 


'CES* 

'CBO „ V CB 
(nAI " (VI 
Max 


"FE 9 'C V CE 
Min Max L (mAI * IV) 


'c 

VcE(sat) V BE(sat | , mA| 
(VI & (VI @ , 
Max Min Max "b = ^"' 


c ob 
(pF) 
Max 


' T <C 
IMHzl @ ,.. 
«. .. ImAI 
Mm Max 


'(off) 
Ins) 
Max 


Test 
Condition 


Process 
No. 


2N3253 


TO-39 


76 


40 


5 




20 750 5 
25 75 375 1 
25 150 1 


0.35 1.0 150 
0.6 0.7 1.3 500 
1 .2 1 .8 1 A 


12 


175 50 


70 


7 


25 


500 60 


2N3444 


TO-39 


80 


60 


5 


500 60 


15 1A 5 
20 60 500 1 


0.35 1.0 150 
0.6 1.3 500 


12 


150 50 


70 


7 


25 














20 150 1 


1.2 1.8 1A 












2N3605 


TO-92 




14 




500 18 


30 10 1 


0.25 0.85 10 


6 


300 10 


45 


2 


21 





(74) 


















2N3606 


TO-92 




14 




500 18 


30 10 1 


0.25 0.85 10 


6 


300 10 


60 


2 


21 


(74) 














2N3607 


TO-92 
(74) 




14 




500 18 




30 10 1 


0.25 0.85 10 


6 


300 10 


70 


2 


21 


2N3646 


Same as PN3646, see page 1-6 for explanation 




2N3724 


TO-39 


50 


30 


6 


1 .7 jiA 40 


30 1A 5 
25 800 2 
35 500 1 
40 300 1 
60 150 100 1 
30 10 1 


0.32 1.1 300 
500 

0.42 0.9 1 .2 

0.65 1 .5 800 

0.75 1.7 1A 


12 


300 50 


60 


7 


25 


2N3724A 


TO-39 


50 


30 


6 


500 40 


25 1 .5A 5 
30 1A 5 
30 800 2 
35 500 1 
40 300 1 
60 150 100 1 
30 10 1 


0.32 1.1 300 
500 

0.42 1 .2 

0.65 1 .3 800 

0.75 1.4 1A 


12 


300 50 


50 
60 


8 
7 


25 


2N3725 


TO-39 


80 


50 


6 


1 .7 nA 60 


25 1A 5 
20 800 2 
35 500 1 
40 300 1 
60 150 100 1 
30 10 1 


0.4 1.1 300 
0.52 0.9 1.2 500 

0.8 1.5 800 
1A 

0.96 1 .7 


10 


300 50 


60 


7 


25 



TEST CONDITIONS: 

HI V CC - 3V, l c = 10mA, l B 1 ■ 3mA, l B 2 - 1.5mA. (2) V CC = 3V. I c = 10mA, l B 1 = 3mA, l B 2 . 1mA. (3) V cc = 10V, l c - 300mA, l B 1 = l B 2 - 30mA. (4) V CC = 2V, l C r 30mA, l B 1 = l B 2 » 3mA. 
(5) V CC « 25V, l C ■ 300mA, l B ' i l B 2 - 30mA. (61 V cc - 25V, l C = 500mA, l B 1 = l B 2 • 50mA. (7) V CC - 30V, l C = 500mA, l B 1 - l B 2 = 50mA. (8) V CC = 30V, l C = 1A, l B ' - l B 2 = 100mA. 
(9) V CC =3V, l C = 10mA, l B 1 = l B 2 = 1mA. (10) V cc = 10.7V, l c = 1A, Is 1 - l B 2 = 100mA. (111 V CC = 3V, l c = 10mA, l B ' i l B 2 . 3mA. (12) V CC = 3V, l c = 10mA, l B 1 = l B 2 = 3.3mA. 



sjoisssueji NdN 



NPN Transi 



SATURATED SWITCHES (Continued) 



Type No. 



Case 
Style 



VCES' 
VcBO 
(V) 
Min 



VCEO 
(VI 
Min 



Vebo 

IV) 
Min 



'CES* 

'CBO Vcb 
(nAI " IV) 
Max 



Min Max v (mAI * |VI 



v CEIsatl 
(V) 



v BE(satl 
IVI 



B 10 



c ob 
IpF) 
M.i> 



'T 
(MHzl 



Min 



ImA) 



•(off) 
Insl 
Max 



2N3725A 



TO-39 



80 



50 



6 



500 



60 



20 
25 
25 
35 
40 
60 
30 



1.5A 

1A 

800 

500 

300 

100 

10 



0.4 

0.52 

0.8 

0.9 



1.1 
1.2 
1.3 



300 
500 
800 



10 



50 



50 



2N4013 



TO-18 



1 .7 jjA 40 



25 
35 
40 
60 
30 



1A 
800 
500 
300 
100 
10 



0.25 

0.2 

0.32 

0.42 

0.65 

0.75 



0.9 



0.76 

0.86 

1.1 

1.2 

1.5 

1.7 



10 

100 

300 

500 

800 

1A 



1.7 f,A 



25 
20 
35 
40 
60 
30 



1A 
800 
500 
300 
100 
10 



0.25 

0.26 

0.4 

0.25 

0.8 

0.9 



0.9 



0.76 

0.86 

1.1 

1.2 

1.5 

1.7 



10 

100 

300 

500 

800 

1A 



60 



2N4047 



TO-39 



1.7 uA 60 



15 
15 
20 
30 
40 
20 



1A 
800 
500 
300 
100 
10 



0.4 

0.52 
0.8 



0.9 



1.1 



1.2 
15 



300 



500 
800 



250 



60 



TO-92 
(72) 



Same as PN4274, see page 1-6 for explanation 



2N4275 



TO-92 
(72! 



Same as PN4275, see page 1-6 for explanation 



2N4294 



TO-92 
(74) 



400 



20 



20 100 2 

30 120 10 1 



0.9 10 



400 



10 



20 



TO-92 
(74! 



20 



20 1 00 2 

40 120 10 1 



0.25 



0.6 0.9 



10 



TO-92 
(74) 



20 30 



0.72 0.87 10 



400 



TO-92 
(72) 



Same as PN5134, see page 1-6 for explanation 



2N5189 



TO-39 



60 



35 



500 



15 
35 

30 



1A 1 
500 1 
100 1 



1.0 



1.5 



1A 12 250 



50 70 



Jum SATURATED SWITCHES (Continued) 



Type No. 


Case 
Style 


VCES* 
V C BO 
(V) 
Min 


V C EO 
(V) 


VEBO 

(V) 


ices* 

>CBO 
InA) 
Max 


W IV) 


h 


FE 
Max 


19 ImAI 


* IV) 


v CE(sat) 
(V) 


v BE(sat) 
& (V) 


'c 

(mA) 

@ 


C c b 
(pF) 


'T 

(MHz) (° 


'C 
(mAI 


* (off ) 
(ns) 


Test 
Condition 




Min 


Min 




Max 


Min Max 




Max 


Min Max 


Max 


2N5224 


TO-92 


25 


12 


5 


500 


15 


15 




100 


1 


0.35 


0.9 


10 


4 


250 


10 


60 


11 




(72) 












40 


100 


10 


1 


















2N5769 


TO-92 
(72) 


40 


15 


4.5 


400 


20 


20 
30 
40 


120 


100 

30 

10 


1 

0.4 
0.35 


0.2 

0.25 

0.5 


0.7 0.85 
1.5 
1.6 


10 
30 
100 


4 


500 


10 


18 


1 


2N5772 


TO-92 
(72) 


40 


15 


5 


500 


20 


15 
25 
30 


120 


300 
100 
30 


1 

0.5 
0.4 


0.2 

0.28 

0.5 


0.75 0.95 
1.2 
1.7 


30 

100 

300 


5 


350 


30 


28 


3 


DH3724CD 


Ceramic 
DIP (40) 


50- 


36 


60 


1.7 mA 


40 


30 
35 
60 


150 


1A 
500 
100 


5 
1 


0.75 
45 


1.7 
1 .2 


500 
1 A 


12 


300 


50 


60 


7 


DH3724CN 


Molded 


Electrical, same as DH3724CD 






























ni o lin\ 
Ulr My| 




































OH3725CD 


Ceramic 


80* 


50 


6 


1.7 i,A 


60 


25 




1A 


5 


0.95 


1.7 


500 


10 


250 


50 


60 


7 




DIP (40) 












35 
60 


150 


500 
100 


1 
1 


0.52 


1.2 


1A 












DH3725CN 


Molded 


Electrical, same as DH3725CD 






























DIP (39) 




































EN2369A 


TO-92 


Same as PN2369A, see page 1-6 for explanation 




























(72) 




































MPS706 


TO-92 
(72) 


15 


15 


3 


500 


15 


20 




10 


1 


0.6 


0.9 


10 


6 


200 


10 


75 


11 


MPS834 


TO-92 
(72) 


40 




5 


500 


20 


25 




10 


1 


0.25 
0.4 


0.9 


10 
50 


4 


350 


10 


30 


2 


MPS2369 


TO-92 


40 • 


15 


4.5 


400 


20 


20 




100 


2 


0.25 


0.7 0.85 


10 


4 


500 


10 


18 


7 




(72) 










40 


120 


10 


1 


















MPS2713 


TO-92 
(72) 


18 


15 


5 


500 


18 


30 


90 


2 


4.5 


0.3 


1.3 


50 












MPS2714 


TO-92 

(72) 


18 


15 


5 


500 


18 


75 


225 


2 


4.5 


0.3 


0.6 1 .3 


50 










MPS3646 


TO-92 


Same as PN3646, see page 1-6 for explanation 




























(72) 








































































PN2369 


TO-92 
(72) 


40" 


15 


4.5 


400 


20 


20 
40 


120 


100 
10 


2 
1 


0.25 


0.7 0.85 


10 


4 


500 


10 


18 


1 



TEST CONDITIONS: 

(1) V CC - 3V. I C " 10mA, l B 1 ■ 3mA, l B 2 - 1.5mA. (2) V cc - 3V, l C " 10mA. I B 1 = 3mA, l B 2 » 1mA. (3) V C C " 10V, l C ■ 300mA, la 1 = l B 2 - 30mA. (41 V cc - 2V, l C ■ 30mA. I B 1 = l B 2 
(5) V CC • 25V, I C • 300mA, l B 1 " l B 2 = 30mA. (6) V cc - 25V, l c - 500mA, l B 1 - l B 2 - 50mA. 17) V cc = 30V, l c = 500mA, l B ' = l B 2 = 50mA. (8) V cc = 30V, l c - 1A, l B 1 = l B 2 = 
(91 V cc = 3V. I C = 10mA, l B 1 = l B 2 = 1mA. (10) V cc = 10.7V, l c = 1A, l B 1 = l B 2 = 100mA. (Ill V cc = 3V, l c -10mA, l B 1 - l B 2 -3mA. (12) V C C = 3V, l c = 10mA, l B 1 = l B 2 = 3.3mA. 



NPN Transistors 



SATURATED SWITCHES (Continued) 







VCES" 


VcEO 
IV) 
Min 




V E BO 

(V) 
Min 


'CES* 












v CE(sat) 
(V) 
Max 


v BEIsat) 
& (V) 

Min Max 


ic 

(mAI 


c ob 
IpF) 
Max 


'T 

(MHz) <S> 
Min Max 




•loffl 
(nsl 
Max 






Type No. 


Case 
Style 


VcBO 
IV) 
Mm 




ICBO 
(nA) 
Max 


" (V) 


h 

Min 


FE 
Max 


'c 

L (mA) 


VCE 
* (V) 


ic 

ImAI 


Test 
Condition 


Process 
No. 










































PN2369A 


TO-92 
(72) 


40" 


15 




4.5 


30 


20 


20 
30 
40 
40 




100 
30 
10 
10 


1 

0.4 

1 

0.35 


0.2 
0.2 


0.7 


0.85 
1.15 

1.6 


10 
30 

100 


4 


500 


10 


18 


1 


21 














120 


0.5 














PN3646 


TO-92 
(72) 


40* 


15 


5 


500* 


20 


15 
20 
30 


120 


300 
100 
30 


1 

0.5 
0.4 


0.2 

0.28 

0.5 


0.75 


0.95 

1.2 

1.7 


30 

100 

300 


5 


350 


30 


28 


3 


22 


PN4274 


TO-92 


30* 


12 




4.5 


500 


20 


18 




100 


1 


0.2 


0.7 


0.85 


10 


4 


400 


10 


12 


12 


21 




(72! 














30 
35 


120 


30 
10 


0.4 
1 


0.25 
0.5 




1.15 
1.6 


30 
100 












PN4275 


TO-92 
(72) 


40" 


15 




4.5 


500 


20 


18 
30 




100 
30 


1 

0.4 


0.2 
0.25 


0.72 


0.85 
1.15 


10 
30 


4 


400 


10 


12 


12 


21 
















35 


120 


10 


1 


0.5 




1.6 


100 














PN5134 


TO-92 


20* 


10 




3.5 


100 


15 


15 


150 


30 


0.4 


0.25 


0.7 


0.9 


10 


4 


250 


10 


18 


12 


21 




(72) 














20 


10 


1 

















TEST CONDITIONS: 

(1) V CC = 3V, l C - 10mA, l B ' = 3mA, l B 2 = 1.5mA. (21 V cc =• 3V. I C = 10mA, l B 1 = 3mA, l B : 

(S) V CC - 25V, I C = 300mA, IpJ = l 8 2 = 30mA. (6) V CC ■= 25V, l c - 500mA, l B ' = l B 2 = 50mA. (7) V cc = 30V, l C 
„1 = i D 2 = i mA . (10) V CC = 10.7V, l c = 1A, l B 1 



(9) V CC = 3V, l c = 10mA, I EJ 1 = I B 2 



= 1mA. (3) V CC = 10V, l c = 300mA, Is 1 = l B 2 -30mA. (4( V CC = 2V, l C = 30mA. l B 1 - l B 2 = 3mA. 

_ - 500mA, l B 1 ■= l B 2 - 50mA. (8) V CC - 30V, l C = 1A, l B ' ■ l B 2 ■ 100mA. 
B 2- 100mA. (11) V CC = 3V, l c = 10mA, l B 1 = l B 2 = 3mA. (12) V cc = 3V, l c = 10mA, l B 1 = l B 2 = 3.3mA. 



RF AMPS AND OSCILLATORS 



Type 


Case 
Style 


VCES' 
v CBO 
(V) 


VCEO 
(V) 
Min 


VEBO 
(V) 
Min 


ICBO 
(nA) 
Max 


& (V) 


Min 


"FE 

Max 


L (mA) & 


VCE 
(V) 


V CEISATI 
(VI 


V BE(SAT) 
& (V) @ 
Min Max 


'C 

(mA) 


Cob'Cre 
(pF) 
Min Max 


'T 

(MHzl @ 


ic 

(mA) 


NF 

(dB)@ 
Max 


Freq 
(MHz) 


Process 
No. 






Min 












Max 




win 


max 








2N917 


TO-72 


30 


15 


3 


1 15 


20 




3 


1 


0.5 


0.87 


3 


3 


500 




4 


6 


60 


43 


2N918 


TO-72 


30 


15 


3 


10 


15 


20 




3 


1 


0.4 


1.0 


10 


3 


600 




4 


6 


60 


43 


2N918 

J, JTX, JTXV 


TO-72 


30 


15 


3 


10 


15 


20 
20 
10 


200 


10 

3 

500 mA 


10 

1 

10 


0.4 


1.0 


10 


1.7 


600 




4 


6 


60 


43 


2N2857 


TO-72 


30 


15 


2.5 


10 


15 


30 


150 


3 


1 




1 


1000 


1900 


5 


4.5 


450 


42 


2N2857 

J, JTX, JTXV 


TO-72 


30 


15 


3 


10 


15 


30 


150 


3 


1 


0.4 


1.0 


10 


1 


1000 


1900 


5 


4.5 


450 


42 


2N3478 


TO-72 


30 


15 


2 


20 


1 


25 


150 


2 


8 




1 


750 


1600 


5 


4.5 


200 


42 



AM RF AMPS AND OSCILLATORS (Continued) 



Type 
No. 


Case 
Style 


V CE S* 
V C BO 
(V) 


VCEO 
(VI 
Min 


v EBO 

(V) 
Min 


'CBO 

InA) @ 
Max 


V C B 

(V) 


Min 


h FE @ 
Max 


(mAI 


V C E 

(V) 


V CE(SAT) 
(V) 
Max 


V BE(SAT) 
& (V) % 
Min Max 


'C 

(mA) 


'-ob'^re 
(pF) 
Min Max 


'T 

(MHz) <9 
Min Max 


'c 

(mA) 


NF 

IdB) ia 
Max 


Freq 

(MHz) 


Process 

No. 




TO-92 




PN3563, see page 1-10 for explanation 


























43 




(72) 








































2N3564 


TO-92 


Same as 


PN3564, see page 1-10 for explanation 


























43 




(72! 








































2N3600 


TO-72 


30 


15 


3 


10 


15 


20 


150 


3 


1 




1 


850 


1500 


5 


4.5 


200 


42 


2N3662 


TO-92 
(74! 


18 


12 


3 


500 


15 


20 




8 


10 








0.8 17 


700 


2100 


5 


6.5 


60 


43 


2N3663 


TO-92 
(74) 


30 


12 


3 


500 


15 


20 




8 


10 








0.8 1.7 


—rrr 

700 


2100 


5 


6.5 


60 


43 


2N3825 


TO-92 
(74) 


30 


15 


4 


100 


15 


20 




2 


10 


0.25 




2 


3.5 


200 


800 


2 


5.5 


1 


43 


2N3932 


TO-72 


30 


20 


2.5 


10 


15 


40 


150 


2 


8 




0.55 


750 


1600 


2 


4 5 


200 


42 


2N3933 


TO-72 


40 


30 


2.5 


10 


15 


60 


200 


2 


8 




0.55 


750 


1600 


2 


4 


200 


42 


2N4134 


TO-72 


30 


30 




50 


10 
















0.5 


350 


800 




2.5 


60 


44 


3 


25 


200 


4 


5 








4 


2N4135 


TO-72 


30 


30 


3 


50 


10 


25 


200 


4 


5 




0.5 


425 


800 


4 


5 


450 


44 


2N4252 


TO-72 


30 


18 


4 


50 


15 


50 




2 


10 




0.45 


600 


1400 


2 




42 


2N4259 


TO-72 


40 


30 


2.5 


10 


15 


60 


250 


2 


8 




0.55 


750 


1600 


2 


5 


450 


42 


2N4292 


TO-92 
(74) 


30 


15 


3 


500 


15 


20 




3 


1 


0.6 




10 


3.5 


600 




4 


6 


60 


43 


2N4293 


TO-92 
(74) 


30 


15 


3 


500 


15 


20 




3 


1 


0.6 




10 


3.5 


600 




4 


6 


60 


43 


2N5130 


TO-92 


Same as PN5130, see page 1-10 for explanation 


























43 




(72) 








































2N5179 


TO-72 


20 


12 


2.5 


20 


15 


25 


250 


3 


1 


0.4 


1.0 


10 


1 


900 


2000 


5 


4.5 


200 


42 


2N5180 


TO-72 


30 


15 


2 


500 8 


20 


200 


2 


8 








1 


650 


1700 


2 




42 


2N5222 


TO-92 
(711 


20 


15 


2 


100 


10 


20 


1500 


4 


10 


1.0 


1.2 


10 


1.3 


450 




4 






49 


2N5770 


TO-92 
(72) 


30 


15 


4.5 


10 


15 


50 
20 


200 


8 

3 


10 
1 


0.4 


1.0 


10 


0.7 11 


90 


1800 


8 


6 


60 


43 


40235 


TO-72 


35 




3 


1 u A 


35 


40 


170 


1 


6 








0.65 












42 












20 


1 






























40236 


TO-72 


35 




3 


1 M 
20 


35 
1 


40 


275 


1 


6 








065 












42 


40237 


TO-72 


35 




3 


1 juA 
20 


35 
1 


27 


275 


1 


6 









0.8 












42 













































sjo»SjSUBJi NdN 




NPN Tn 



EH 

AM RF AMPS AND OSCILLATORS (Continued) 








V C EO 
(V) 
Min 


VEBO 

(V) 
Min 














VCEISAT) V BE (SATI 
(VI & (VI s 
Max Min Max 




c ob/C re 
(pF) 
Min Max 






NF 

(dB)@ 
Max 




Type 
No. 


Case 
Style 


V C BO 

(VI 


'CBO 

(nA) C 
Max 


,v CB 

IVI 


Min 


»FE 

Max 


9 (mA) & 


V C E 
IVI 


'C 

ImA) 


*T 

(MHz) @ 
Min Max 


'c 

(mA) 


F 

lit 






Mir, 


























40238 


TO-72 


35 




3 


1 ma 


35 


40 


170 


1 


6 




0.65 


















20 1 




















40239 


TO-72 


35 




3 


1 mA 


36 


27 


100 


1 


6 






0.65 




















20 1 
























40240 


TO-72 


35 




3 


1 jiA 


35 


27 


275 


1 


6 




0.65 




















20 


1 






















40242 


TO-72 


35 




3 


20 1 


40 


170 




6 




0.65 






40243 


TO-72 


35 




3 


20 1 


40 


170 




6 




0.65 






40244 


TO-72 


35 




3 


20 1 


27 


170 




6 




0.65 






40245 


TO-72 


35 




3 


20 1 


70 


170 




6 




0.8 






40246 


TO-72 


35 




3 


20 1 


27 


170 




6 




0.65 






EN918 


TO-92 
(72) 


Same as 


PN918,se 


e page 1-10 for explanation 


MPSH07 


TO-92 
(75! 


30 


30 


3 


50 


15 


20 




3 


10 




0.3 


400 


3 


3.2 


" 


MPSH08 


TO-92 


30 


30 


3 


50 


15 


20 




3 


10 






0.3 


500 


3 


3.5 


2( 




(75) 


































MPSH10 


TO-92 
171) 


30 


25 


3 


100 


25 


60 




4 


10 


0.5 


4 


0.35 0.65 


650 


4 









































MPSH1-1 


TO-92 
(76) 


30 


25 


3 


100 


25 


60 




4 


10 


0.5 


4 


0.6 0.9 


650 4 




MPSH19 


TO-92 
(76) 


30 


25 


3 


100 


15 


45 




4 


10 




0.66 


300 


4 




MPSH20 


TO-92 


40 


30 


4 


50 


15 


25 




4 


10 


0.95 


10 


0.65 


400 4 






171) 














MPSH24 


TO-92 
(47) 


40 


30 


4 


50 


15 


30 




8 


10 






0.36 


400 


8 










































MPSH30 


TO-92 
(71) 


20 


20 


3 


50 


10 


20 


200 


4 


5 


0.3 0.96 


10 


0.65 


300 800 


4 


6 


■1! 


MPSH31 


TO-92 
(71) 


20 


20 


3 


50 


10 


20 


200 


4 


5 


0.3 0.96 


10 


0.65 


300 800 


4 


6 


4' 


































MPSH32 


TO-92 
(76) 


30 


30 


4 


50 


10 


27 


200 


4 


5 


0.3 1.2 


10 


0.22 


300 


4 




MPSH34 


TO-92 
(76) 


45 


45 


4 


50 


30 


15 
40 




20 
7 


2 

15 


0.5 


20 


0.32 


500 


15 




MPSH37 


TO-92 
(71) 




40 


5 


500 


35 


25 




5 


10 


0.5 


10 


0.7 


300 


5 












































RF AMPS AND OSCILLATORS (Continued) 







V CES" 


V C EO 
(VI 
Min 


VEBO 
(V) 
Min 












V CE(SAT) 
(V) & 
Max 


V BE(SATI 

(VI » 




c ob /c r. 
(pFI 
Min Max 




H 

WHzl 

Max 






TVP. 

No. 


Case 
Style 


v CBO 
(VI 


'CBO 
(nA) ( 
Max 


a V CB 
" (V) 


Min 


"FE 

Max 


• 'c 

ImA 


» VcE 

(VI 


'C 
(mAI 


( 


* (mAI 


NF Fr. 
MaT' MH 






Min 


































MPS3563 


TO-92 


Same as PN3563, 


xe page 1-10 tor explanation 
























(72) 


































MPS6507 


TO-92 
(72) 


30' 


20 




5 


15 


25 




2 


10 








2.5 


700 




10 






































MPS651 1 


TO-92 


30* 


20 




50 


15 


25 




1U 


in 








l.o 








(72) 






















































MPS6539 


TO-92 


20 


20 




50 


15 


20 




4 


10 








0.7 


500 




4 


4.5 100 




(71) 




































MPS6540 


TO-92 
(71) 


30 


30 


4 


100 


25 


25 




2 


10 


0.5 




10 


65 


350 




2 




MPS6541 


TO-92 
(72) 


30* 


20 


4 


50 


15 


25 




4 


10 








1.7 


600 




4. 








































MPS6542 


TO-92 
(76) 


30" 


20 




50 


15 


25 






10 




1.5 






10 






(76) 


35 


20 


3 


100 


25 


25 




4 


10 


0.35 


0.95 


10 


1 


750 




4 








































MPS6544 


TO-92 
(71) 


60 


45 


4 


500 


35 


20 




30 


10 


0.5 




30 


0.65 












































MPS6S46 


TO-92 
(76) 


36 


25 


3 


100 


25 


20 




2 


10 


0.35 




10 


0.45 


600 




2 








































MPS6547 


TO-92 


35 


25 


3 


100 


25 


20 




2 


5 


0.35 




10 


0.35 


600 




2 






(76I 




































MPS6548 


TO-92 
(71) 


30 


25 


3 


100 


25 


25 




4 


10 


0.5 


0.95 


4 


0.7 


650 




4 








































MPS6567 


TO-92 
(711 




40 


5 


500 


35 


25 




10 


5 


0.5 




10 


0.7 








































MPS6568A 


TO-92 
(71) 


20 


20 


3 


50 


10 


20 


200 


4 


5 


0.3 


0.96 


10 


0.65 


375 


800 


4 


3.3 200 


































MPS6569 


TO-92 
(71) 


20 


20 


3 


50 


10 


20 


200 


4 


5 




0.96 


10 


0.25 0.5 


300 


800 


4 


6 45 




































MPS6570 


TO-92 
(71) 


20 


20 


3 


SO 


10 


20 


200 


4 


5 


3 


0.96 


10 


0.25 0.5 


300 


800 


4 


6 45 


































MRF501 


TO-72 


25 


15 


3.5 


50 1 


30 


250 


1 


6 






600 




s 




MRF502 


TO-72 


35 


15 


3.5 


20 1 


40 


170 


1 


6 






800 




5 




NSC460 


TO-92 


30 


30 


5 


500 


18 


35 


200 


2 


12 


1.1 




10 


3.5 




6.5 1 




(74) 
































NSC461 


TO-92 
(74) 


30 


30 


5 


500 


18 


35 


200 


2 


12 


1.1 




10 


3.5 







SJOlSjSUt 



NPN Transistors 



RF AMPS AND OSCILLATORS (Continued) 







V CE S* 


v CEO 
(V) 


v EBO 
(VI 
















VCE(SAT) 
(VI & 


VBE(SAT) 
(VI « 














Type 


Case 


'CBO 
InA) 






n FE 




,Al fi 


V CE 


1 c 

'luiAl 


i-ob'We 
(pF) 


T 

(MHz) 




NF _ 

Freq 

Max * <MHZ| 


Process 


No. 


Style 


(V) 
Min 


Min 


Min 


Max 


" (V) 


Min 


Max 


9 (n 


' (VI 


Max 


Vlin Max 


Min Max 


Min 


Max 


W ImAI 


No. 


































PE3100 


TO-92 
(76) 


30' 


30 


3 


200 


30 


30 


225 


5 




10 










0.8 


500 




S 




47 


PE5025 


TO-92 


30 


30 


3 


50 


30 


20 


100 


10 




10 


0.6 




20 


0.6 


1 


300 


700 


10 




46 




(72) 












































































PE5029 


TO-92 
(76) 


30 


30 


3 


200 


30 


30 


225 


5 




10 










0.4 


500 




5 


6 45 


47 








































PE5030B 


TO-92 
176) 


46 


40 


4.5 


100 


30 


45 


150 


7 




15 


3 


0.92 


20 
10 


0.25 


0.4 


600 




7 




47 




































PE5031 


TO-92 


40 


30 


4 


100 


30 


30 


180 


5 




10 


1 




10 




0.4 


500 






4.5 200 


47 




(76) 








































































PN918 


TO-92 
172) 


30 


15 


3 


10 


15 


20 




3 




1 


0.4 


1.0 


10 


1.7 


600 




4 


6 60 


43 










































PN3563 


TO-92 
(72) 


30 


15 


2 


50 


15 


20 


200 


8 




10 






1.7 


600 


1500 


8 




43 


































PN3564 


TO-92 
(72) 


30 


15 


4 


50 


15 


20 


500 


15 




10 


0.3 


0.97 


20 


3.5 


400 


1200 


15 




43 






































PN5130 


TO-92 
(72) 


30 


12 


1 


50 


10 


15 


250 


8 




10 


0.6 


1.0 


10 




1.7 


450 




8 




43 








































PN5179 


TO-92 


20 


15 


2.5 


2 


15 


25 


250 


3 




1 


0.4 


1.0 


10 




1.0 


900 


2000 


5 


4.5 200 


42 




(711 










































































SE5020 


TO-72 


20 


20 


3 


50 


10 


20 


200 


4 




5 


3.0 


0.96 


10 


25 


0.5 


375 


800 


4 


3.3 200 


44 


SE5021 


TO 72 


20 


20 


3 


50 


10 


20 


700 


4 




5 


3.0 


0.96 


10 


0.25 


0.5 


375 


800 


4 


4 200 


44 


SE5022 


TO-72 


20 


20 


3 


50 


10 


20 


200 


4 




5 


3.0 


0.96 


10 


o 


0.5 


300 


800 


4 




44 


SE5023 


TO-72 


20 


20 


3 


50 


10 


20 


200 


4 




5 


3.0 


0.96 


10 


0.25 


0.5 


300 


800 


4 


6 45 


44 


SE5024 


TO-72 


20 


20 


3 


50 


10 


20 


200 


4 




5 


3.0 


0.96 


10 


0.25 


0.5 


300 


800 


4 


6 45 


44 


SE5050 


TO-72 


20 


20 


3 


50 


10 


20 


200 


4 




5 


3.0 


0.96 


10 


0.25 


0.5 


300 




4 


4 100 


44 


SE5051 


TO-72 


20 


20 


3 


50 


10 


20 


200 


4 




5 


3.0 


096 


10 


0.25 


0.5 


300 




4 




44 














SES052 


TO-72 


20 


20 


3 


50 


10 




3.0 




10 




375 




4 


4 200 


44 


SE50B5 


TO-72 


20 


20 


3 


50 


20 


20 


220 


2 




10 


2.75 




10 


0.22 


300 




2 


5 45 


44 


TIS86 


TO-92 


30 


30 




100 


15 


40 


200 


4 




10 


0.5 




15 


0.45 


500 




4 


5 200 


47 




(78) 




































TIS87 


TO-92 


45 


45 




100 


15 


30 


150 


12 




12 


0.5 




15 




0.45 


500 




12 




47 




(78) 

















































































s 



LOW LEVEL AMPS 



Type 
No. 


Case 
Style 


v CBO 

(V) 
Min 


VCEO 
(V) 
Min 


VEBO 
(V) 
Min 


■CBO 

InA) 
Max 


e v cb 

(V) 


Min Max (mA) 


VCE 
(V) 


V CE(SAT) 
IV) & 
Max 


VBE(SAT) 

(V) 
Min Max 


<a 'C 
(mA) 


C b 
(pF) 
Max 


«T 

(MHz) @ 
Max Min 


'c 

(mA) 


NF 

(dB) 
Max 


® Freq 
(kHz) 


No. 


2N760 


TO-18 


45 


45 


8 


200 


30 


76 


300 
(1 kHz) 


1 


5 


1.0 


0.6 


1.1 


10 


8 


50 


1.0 




07 


2N760A 


TO-18 


60 


60 


8 


100 


30 


76 
40 


333 
(1 kHz) 


1 

10 nA 


5 
5 


1.0 




1.1 


10 


8 


50 


1.0 




07 


2N929 


TO-18 


45 


46 


5 


10 45 


60 
40 


350 
120 


10 

500 (iA 
10tiA 


5 
5 
5 


1.0 


0.6 


1.0 


10 


8 


30 


0.5 


4 


15.7 


07 


2N929 
J, JTX 


TO-18 


60 


45 


6 


10 


45 


60 
40 


350 
120 


10 

500 mA 
10 nA 


5 
5 
5 


1.0 


0.6 


1.0 


10 


8 


45 180 


0.5 


5 
3 
3 


100 Hz 
1 

10 


07 


2N929A 


TO-18 


60 


45 


6 


2 


45 


60 
40 
25 


350 
120 


10 

500 aiA 
10j»A 
1 mA 


5 
5 
5 
5 


0.5 


0.7 


0.9 


10 


6 


45 


0.5 


4 


10 


07 


2N930 


TO-1 8 


45 


45 


g 


10 


45 


150 
100 


600 
300 


10 

500 uA 
1 mA 


g 
5 
5 


1 


0.6 


1.0 


10 


g 


30 


5 


3 


15.7 


07 


2N930 
J. JTX 


TO-18 


60 


45 


6 


10 


45 


1 50 
100 


600 
300 


10 

500 mA 
10 uA 


5 
5 


1.0 


0.6 


1.0 


10 


8 


45 180 


0.5 


5 
3 
3 


100 Hz 
1 

10 


07 


2N930A 


TO-18 


60 


45 


6 


2 


45 


150 
100 
60 


600 
300 


10 

500 mA 
10jiA 
1 tiA 


5 
5 
5 
5 


0.5 


0.7 


0.9 


10 


6 


45 


0.5 


3 


10 


07 


2N981 


TO-18 


80 


80 


8 


1 


30 


36 


100 
(1 kHz] 


1 


5 


3.0 






10 


5 


50 


1.0 




07 


2N2484 


TO-18 


60 


60 


6 


10 45 


250 
200 
175 
100 
30 


500 


1 

500 uA 
100 mA 
10 mA 
1 M 


5 
5 
5 
5 
5 


0.35 






1 


10 


15 


0.05 


10 

3 
2 
3 


20 Hz 
200 Hz 
2 

15.7 


07 


2N2484 

J, JTX, JTXV 


TO-18 


60 


60 


6 


10 


45 


250 
250 
225 
200 
45 


500 


1 

500 »jA 
100 m a 

10 mA 

1 ixA 


5 
5 
5 
5 
5 


0.3 






1 


5 


60 210 


0.5 


7.5 
3 
2 
3 


100 Hz 
1 

10 
15.7 


07 


2N2509 


TO-18 


125 


80 


7 


5 


100 


40 
25 




10 

10jiA 


5 
5 


1.0 




0.9 


5 


6 


45 


5 


7 


1 


07 


2N2510 


TO-18 


100 


65 


7 


5 


80 


150 

75 


500 


10 

10 mA 


5 
5 


1.0 




0.9 


5 


6 


45 


5 


4 


1 


07 



I 



sjoisisueji NdN 




NPN Transistors 



2 



LOW LEVEL AMPS (Continued) 



Type 
No. 


Case 
Style 


VcBO 
(V) 


VcEO 
(VI 


Vebo 

(VI 


'CBO 
(nAI @ 
Max 


v CB 

(VI 


hFE 


@ (mA, * 


VCE 
(VI 


VCE(SAT) 
(V) & 


VBEISAT) 

(v) e 


ic 

(mA) 


IpF) 


M ^ '™* 
Max Mtn 


NF 

(dB) @ 


Freq 
(kHz) 


Process 


Min 


Min 


Min 


Mm 


Max 


Max 


Min Max 


Max 


Max 


No. 


2N251 1 


TO-18 


80 


50 


7 


5 


60 


240 
120 
80 


750 


10 . 
10 mA 
1 mA 


5 
5 
5 


1.0 


0.9 


5 


5 


45 


5 


4 


1 


07 


2N2504 


TO-46 


€0 


45 


a 


2 45 




600 
600 

300 


10 

1 

500 nA 
10 mA 
1 uA 








10 




45 


0.5 




07 


150 
150 
100 
60 


5 
5 
5 
5 
5 


0.5 


0.7 0.9 


g 


3 


1U 


2N2586 


TO-18 


60 


























45 


6 


2 


45 


150 
120 
80 


600 
360 


10 

500 mA 
10 »iA 
1 


5 
5 
5 
5 


0.5 


0.7 0.9 


10 


7 


45 


0.5 


3 

2 


1 

10 


07 


























2N3117 


TO-18 


60 


60 


6 


10 


45 


400 
300 
250 
100 


500 


1 

100/uA 
10fiA 
1 iiA 


5 
5 
5 
S 


0.35 




1 


4.5 


60 


0.5 


4 
15 


20 Hz 
10 Hz 


07 




























2N3246 


TO-18 


60 


40 


10 


1 


40 


400 
350 
300 
200 


800 


10 


5 
5 
5 
5 
5 


0.5 


0.7 0.9 


5 


5 


60 


180 1 


2 


15 


07 
















600 


1 

500 (iA 
100 k A 
10 (iA 


































150 




1 »iA 


5 














2N3565 


TO-92 
(72) 


Same as PN3565, see page 1-14 for explanation 


07 


2N3707 


TO-92 
(74) 


30 


30 


6 


100 


20 


100 


400 


100«A 


5 


1.0 




10 








5 


15.7 


07 










2N3708 


TO-92 
(74) 


30 


30 


6 


100 


20 


45 


660 


1 


5 


1.0 




10 
















































2N3709 


TO-92 
(74) 




30 




100 


20 


45 


165 


1 


5 


1.0 




10 








07 


2N3710 


TO-92 
(74) 


30 


30 


6 


100 


20 


90 


330 


1 


5 


1.0 




10 








07 


2N3711 


TO-92 
(74) 


30 


30 




100 


20 


180 


660 
























6 


1 


5 


1.0 




10 












07 


2N3858A 


TO-92 
(74) 


60 


60 


6 


500 


18 


60 
45 


120 


10 
1 


1 
1 




4 


90 


250 2 




07 


2N3859A 


TO-92 


60 


60 


6 


500 


18 


100 


200 


10 


1 








4 


90 


250 2 




07 




(74) 












75 




1 


1 


















2N3877 


TO-92 
(74) 


70 


70 


4 


500 


70 


20 


250 


2 


4.5 




0.5 0.9 


10 












07 











































mm LOW LEVEL AMPS (Continued) 



Type 
No. 


Case 
Style 


VcBO 
(VI 
Mm 


v CEO 
(V) 
Min 


v EBO 
(VI 
Min 


<CBO 
(nA) ( 
Max 


, V CB 

" IV) 


h 

Min 


FE 

Max 


(mAI 


, VCE 
(V) 


V CE(SAT) 
(VI 
Max 


V BE(SATI 
8. IV) 
Min Max 


(mA) 


c ob 
IpFI 
Max 


<T 

(MHz) <s 
Max Min 


>C 
(mA) 


NF 
(dBI 
Max 


9 F """ 
(kHz) 


2N3877A 


TO-92 
I74I 


85 


85 


4 


500 


70 


20 


250 


2 


4.5 




0.5 0.9 


10 








2N3900 


TO-92 
(74) 


18 


18 


5 


100 18 


250 


500 


2 


4.5 




12 






2N3900A 


TO-92 
(74) 


18 




5 




250 


500 


2 


4.5 




12 






5 


15.7 


18 


100 18 








2N3901 


TO-92 
(74) 


18 




5 


100 


15 


350 


700 




















18 


2 


4.5 


















2N4286 


TO-92 
(74) 


30 


25 


6 


50 


25 


150 
100 


600 


1 

100 pA 


5 
5 


0.35 


0.8 


1 


6 


40 1 




2N4287 


TO-92 
(74) 


45 


45 




10 












0.35 


0.8 






40 1 




15.7 


7 


30 


150 
ion 


600 


1 

100mA 


5 
5 


1 


6 


5 


2N4384 


TO-18 














10 
1 

10 iiA 
1 mA 




















40 


30 


5 


10 


30 


150 
120 
100 
60 


500 


5 
5 
5 
5 


0.2 


0.65 0.8 


10 


8 


30 120 


0.5 


2 


15.7 




























2N4386 


TO-18 


40 


30 




10 


30 




0.2 


0.65 0.8 


10 


8 


30 120 


0.5 




15.7 


5 


120 
100 
40 


500 


10 

1 

10mA 


5 
5 
5 


3 






























2N440S 


TO-92 
(72) 


80 


50 


5 


10 


60 


60 
60 


400 


10 
1 


1 
1 


0.2 


0.8 


1 


12 


60 300 


10 








































2N4410 


TO-92 
(72) 


120 


80 


5 


10 


100 


60 
60 


400 


10 


1 


0.2 


0.8 


1 


12 


60 300 


10 




















1 


1 


















2N4966 


TO-92 


Same as 2N5209, see page 1-14 for explanation 




























(72) 






































TO-92 


Same as 2N5210, see page 1-14 for explanation 




























(72) 




































2N4968 


TO-92 
(72) 


Same as 2N5209, see page 1-14 for explanation 


























2N5088 


TO-92 
(72) 


35 


30 




50 


20 


300 
350 




10 

1 


5 
5 


0.5 




10 


4 






3 


15.7 
















300 


900 


100 m A 


5 


















2N5089 


TO-92 
(72) 


30 


25 




50 


15 


400 
450 
400 




10 

— * 


5 
5 


0.5 




10 


4 






2 


15.7 














1200 


100 mA 


5 


















2N5133 


TO-92 
(72) 









































































sjojsjsuej 



NPN Transistors 



EH 

JuM LOW LEVEL AMPS (Continued) 



No. 


Case 
Style 


V C BO 
IV) 
Min 


VCEO 
IV) 
Min 


V E BO 
IV) 
Min 


'CBO 
InA) @ 
Max 


V C B 

IV) 


h 

Min 


Max 


B> C & 

ImAl 


V CE 
(VI 


Vq£ (SAT) 
(V) & 
Max 


^BE(SAT) 

IV) 
Min Max 


ImA) 


IpF) 
Max 


f T 

IMHzl @ , C 
Max Mm 


NF 
IdB) 
Max 


(kHz) 


No 


2 N 5209 


TO-92 
(72! 


50 


50 




50 


35 


150 
150 




10 
1 


5 
5 


0.7 




10 


4 


30 0.5 


4 


1 


07 








































2IM5210 


TO-92 
(72I 


50 


50 




50 


35 


250 
250 




10 


5 
5 


0.7 




10 


4 


30 0.5 


3 


1 


07 
















200 


600 


100 /J A 


5 


















2N5232 


TO-92 




50 




30 


50 


250 


500 


2 


5 


0.125 




10 


4 








07 




(74) 




































2N5232A 


TO-92 




50 




30 


50 


250 


500 


2 


5 


0.126 




10 


4 




5 


1 


07 




(74! 




































EN930 


TO-92 
(72) 


Same as PN930, see below for explanation 


























07 






































EN2484 


TO-92 


Same as PN2484, see below for explanation 
























07 




(72! 




































MPSA09 


TO-92 
I72I 


50 


50 




100 


25 


100 


600 


100 mA 


5 


0.9 




10 


5 


600 0.5 






07 








































MPS3707 


TO-92 
(72) 




30 




100 


20 


100 


400 


100 mA 


5 


1.0 




10 






5 


15.7 


07 


MPS3708 


TO-92 
(72) 




30 




100 


20 


45 






5 


1.0 





10 










07 






660 


1 












MrbJ /UM 


(72) 




30 




100 


20 


45 


lob 


1 


b 
















07 


MPS3710 


TO-92 




30 




100 


20 


90 


330 


1 


5 


1.0 




10 










07 




(72) 






































MPS3711 


TO-92 








100 


20 




180 





1 




1.0 




10 











07 




30 




660 


5 














(72) 


































MPS6571 


TO-92 
(72) 


25 


20 


3 


50 


20 


250 


1000 


100 m A 


5 


0.5 




10 


4.5 


50 0.5 






07 


PE4010 


TO-92 
(72) 


30 


25 


6 


200 


5 


200 


1000 


1 


10 


0.35 




1 


4 


20 0.05 
60 1 


3 


1 


07 


PN930 


TO-92 
(72) 


45 


45 


5 


10 


45 


150 
100 


600 
300 


10 

500 uA 
10 mA 


5 
5 
5 


1.0 


0.6 1 .0 


10 


8 


30 0.5 


3 


15.7 


07 


PN2484 


TO-92 
(72) 


60 


60 


6 


10 


45 


250 


800 


10 

1 


5 
5 


0.35 




10 


6 




10 


100 Hz 


07 
















200 




500 uA 


5 
































175 




100nA 


5 












3 


1 


















100 


500 


10J.A 


5 












2 


10 


















30 




1 mA 


5 














































PN3B6B 


TO-92 
(72) 


30 


25 


6 


50 


25 


150 


600 


1 


10 


0.35 




1 


4 


40 240 1 






07 


PN5133 


TO-92 
(72) 


20 


18 


3 


50 


15 


60 


1000 


1 


5 


0.4 




1 


5 


40 240 1 




07 



s 



GENERAL PURPOSE AMPS AND SWITCHES 



Type 
No. 


Styl« 


VcBO 
(V) 
Min 


V C EO 
(V) 
Min 


Vebo 

(V| 
Min 


'CBO u__ 

InA) 

Max 


"FE a 'C i V CE 
Min Max (mA) (VI 


V CE(SAT) v be(saT) . 

(V) & (V) 9.°.. 

[mAI 

Max Mm Max 


C b 
(pF) 
Max 


<T , 
(MHz) ® . C 
(mA) 

Min Max 


'off 
(ml 
Max 


NF 
(dB) 
Max 


Test 
Condition 


Process 
No. 


2N697 


TO-5 


60 


45 


5 


1 MA 30 


40 120 150 10 


1.5 1.3 150 


35 


50 50 








20 


2N718 


TO-18 


60 


30 


5 


1 M 30 


40 120 150 10 


1.5 1.3 150 


35 


50 15 








20 


2N718A 


TO-18 


75 




7 


10 60 


20 500 10 


1.5 1.3 150 


25 


60 50 




12 


1 


20 














40 120 150 10 
35 10 10 
20 100 uA 10 








2N91S 


TO-18 


70 


50 


5 


10 60 


50 200 10 5 


1.0 0.9 10 


3.5 


250 10 








23 


2N916 


TO-18 


45 


25 


5 


10 30 


50 200 10 1 


05 0.9 10 


6 


300 10 








23 


2N956 


TO-18 


75 


35 


7 


10 60 


40 500 10 
100 300 150 10 
75 10 10 
35 100 mA 10 
20 10 uA 10 


1.5 1.3 150 


25 


70 50 




8 


1 


20 


2N1420 


TO-5 


60 


30 


5 


1 mA 30 


100 300 150 10 


1.5 1.3 150 


35 


50 50 








20 


2N1566 


TO-5 


80 


60 


5 


1 jjA 40 


80 200 5 5 
(1 kHz) 


1.0 10 


10 


60 5 








20 


2N1613 


TO-5 


76 


35 


7 


10 60 


20 500 10 
40 120 150 10 
35 10 10 
20 100 mA 10 


1.5 1.3 150 


26 


60 50 




12 


1 


20 


2N1711 


TO-5 


75 


35 


7 


10 60 


40 500 10 
100 300 150 10 
75 10 10 
35 100 i*A 10 
20 10mA 10 


1.5 1.3 150 


25 


70 50 




8 


1 


20 


2N2218 


TO-5 


60 


30 


5 


10 50 


20 500 10 
20 150 1 
40 120 150 10 
35 10 10 
25 1 10 
20 100(iA 10 


0.4 1.3 150 
1.6 2.6 500 


8 


250 20 








20 


2N2218 

J, JTX, JTXV 


TO-5 


60 


30 


5 


10 50 


20 500 10 
40 120 150 10 
35 10 10 
25 1 10 
20 100mA 10 


0.4 0.6 13 150 
1.6 2.6 500 


8 


250 20 


250 




2 


20 



TEST CONDITIONS: 

(1) Ic " 300 xA, V C E " 10V, f = 1kHz. (2) l c = 150mA. V C C " 30V, l B 1 = In? . 15mA. (3) l C - 100 |iA, V C E - 10V. f = 1kHz. (41 l C - 300mA, V cc = 25V, l B 1 « l B 2 » 30mA. (SI l C " 100 jiA, 
V CE = 4.5V, f = 15.7kHz. (6) Ic ' 10mA, V C C " 3V, l B 1 - l B 2 ■ 1mA. (7) l C - 100 mA, V CE = 5V. f - 15 7kHz. (8) l C - 250 |iA, V CE = SV, f - 10Hz-15.7kHz. I9I l c = 3mA, V C E * 10V, 
f » 1MHz. (101 l c = 10mA. V CE = 5V, f = 15.7kHz. 



sjo»S!SUBJ1 NdN 



NPN Transistors 



3 



GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



T e 


Case 


VcBO 
(V) 


v CEO 
(V) 


V EB 
(V) 


'CBO 
(nA) @ 


V CB 


h 


FE C 


Ir* 

a « 5, & 


V CE 


V CE(SAT) 
(V) 


V BE(SAT) 
& IV) S 


in 


Cob 
(pF) 


«T 

(MHz) @ 


Ir 


'off 
(nsl 


NF 
IdB) 


Test 


Process 


No. 


Style 






(VI 


Min 


Max 


(mA) 


(VI 


Min 


Max 


ImAI 




ImA) 


Max 


Max 


Condition 


No. 




Min 


Min 


Min 


Max 


Max 


Max 


Min Max 






2N2218A 


TO-5 


75 


40 


6 


10 


60 


25 




500 


10 


0.3 


0.6 


1.2 


150 


8 


250 


20 


285 




2 


20 
















20 




150 


1 






































40 


120 


150 


10 






































35 




10 


10 






































25 




1 


10 






































20 




100 M A 


10 
























2N2218A 


TO-5 


75 


50 


6 


10 


60 


20 




500 


10 


0.3 


0.6 


1.2 


150 


8 


250 


20 


300 




2 


20 


J, JTX, JTXV 














40 


120 


150 


10 






































40 




10 


10 


1 




2 


500 






























35 




1 


10 






































30 




100 m A 


10 
























2N2219 


TO-5 


60 


30 


5 


10 


50 


30 




500 


10 


0.4 




1.3 


150 


8 


250 


20 








20 
















50 




150 


1 






































100 


300 


150 


10 


1.6 




2.6 


500 






























75 




10 


10 






































50 




1 


10 






































35 




100 u A 


10 
























2N2219 


TO-5 


60 


30 


5 


10 


50 


30 




500 


10 


0.4 


0.6 


1.2 


150 


8 


250 


20 


250 




2 


20 


J, JTX, JTXV 














100 


300 


150 


10 






































75 




10 


10 


1.6 




2.6 


500 






























50 




1 


10 






































35 




100 n A 


10 
























2N2219A 


TO-5 


75 


40 


6 


10 


60 


40 




500 


10 




0.6 


1.2 


150 


8 


300 


20 


285 




2 


20 
















50 




150 


1 






2 


500 






























100 


300 


150 


10 






































75 




10 


10 






































50 






10 






































35 




100 fJ A 


10 
























2N2219A 


TO-5 


75 


50 


6 


10 


60 


30 




500 


10 


0.3 


0.6 


1.2 


150 


8 


250 


20 


300 




2 


20 


J, JTX, JTXV 














100 


300 


150 


10 






































100 




10 


10 


1 




2 


500 


































1 


10 










































100 u A 


10 
























2N2221 


TO- 18 


60 


30 


5 


10 


50 


20 




500 


10 


0.4 




1.3 


150 


B 


250 


20 








20 
















20 




150 


1 






































40 


120 


150 


10 


1.6 




2.6 


500 






























35 




10 


10 






































25 




1 


10 






































20 




100 uA 


10 





































































mm GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 

No. 


Case 
Style 


v CBO 
(V) 
Min 


v CEO 
(V) 
Min 


v EBO 
(V) 
Min 


'CBO v 
(nAl @ 
Max 


n FE @, 'C V CE 
Min Max (mA) (VI 


VCEISAT) Vbeisati 

sl t\i\ fa C 
iv/ a ivj iff . , 

.. .. u ' mA ' 

Max Mm Max 


Cob 
Max 


,T ic 

tivinzi iff 
Mm Max 


•off 
(ns) 
Max 


IMF 
(d8) 
Max 


Test 
Condition 


Process 
No. 


2N2221 

J, JTX, JTXV 


TO-18 


60 


30 


5 


10 50 


20 500 10 
40 120 150 10 
35 10 10 
25 1 10 
20 100/jA 10 


0.4 0.6 1.3 150 
1 .6 2.6 500 


8 


250 20 


250 




2 


20 


2N2221A 


TO-18 


75 


40 


6 


10 60 


25 500 10 
40 120 150 10 
35 10 10 
25 1 10 
20 1 00 it A 10 


0.3 0.6 1.2 150 
1 .0 2.0 500 


8 


250 20 


285 




2 


20 


2N2221 A 


TO-18 


75 


50 


6 


10 60 


20 500 10 


0.3 0.6 1.2 150 


8 


250 20 


300 




2 


20 


J, JTX, JTXV 










40 120 150 10 
40 10 10 
35 1 10 
30 100 mA 10 


1 .0 2.0 500 












2N2222 


TO-18 


60 


30 


5 


10 50 


30 500 10 
50 160 1 
100 300 150 10 
75 10 10 
50 1 10 
1 nn ,i a in 


0.4 1.3 150 
1 .6 2.6 500 


8 


250 20 








20 


2N2222 

J, JTX, JTXV 


TO-18 


60 


30 


5 


10 50 


30 500 10 
100 300 150 10 
75 10 10 
50 1 10 
35 100 mA 10 


0.4 0.6 1.3 150 
1.6 2.6 500 


8 


250 20 






2 


20 


2N222A 


TO-18 


75 


40 


6 


10 60 


40 500 1 
50 150 1 
100 300 150 10 
75 10 10 
50 1 10 
35 100 mA 10 


0.3 0.6 1.2 150 
1 2 500 


8 


250 20 


285 


4 


2/3 


20 


2N2222A 
J, JTX, JTXV 


TO-18 


75 


50 


6 


10 60 


30 500 10 
100 300 150 10 
100 10 10 
75 1 10 
50 100 mA 10 


0.3 0.6 1.2 150 
1 2 500 


8 


250 20 


300 




2 


20 


2N2712 


TO-92 
174) 


18 


18 


5 


500 18 


75 225 2 4.5 




12 


80 300 2 








27 



TEST CONDITIONS: 

(11 l C = 300 mA, V CE = 10V, f » 1kHz. (2) I C - 150mA, V CC - 30V, f B 1 = 1 B 2 = 15mA. (3) l c = 100 jiA, V C E - 10V, f - 1kHz. 141 l c = 300mA, V cc - 26V, l B 1 = Ip2 = 30mA. (5) l C ■ 100 mA, 
Vce = 4.5V, f = 15.7kHz. (6) l C - 10mA, V C C " 3V, ifl 1 - l«* - 1mA. (71 l c = 100 mA. V ce = 5V, f = 15.7kHz. (8) l c = 250 *iA, V CE - 5V, f - 10Hz-15.7kHz. (91 Ic • 3mA, V CE = 10V, 
f - 1MHz. (101 l C = 10 M. V CE = 5V,f = 15.7kHz. 



sjojsisubji NdN 



NPN Transistors 



23 

ttUB GENERAL PURPOSE AMPS AND SWITCHES (Continued) 


Type 
No. 


Case 
Style 


v CBO 
(V) 


v CEO 
(V) 


v EBO 
IV) 


'CBO v 
(nA, • « 


"FE e 'C g, V CE 
Min Max 1mA) (V) 


V CE(SATI v BE(SAT) - 

(vi & (v) @ (m c AJ 


Cob 
(pFI 


(MHz) e , 


•off 
(nsl 


NF 
IdB) 


Test 
Condition 


Process 
No. 


Min 


Min 


Min 


Max 




Max Min Max 


Max 


Mm Max 


Max 


Max 






2N2714 


TO-92 
(74) 


18 


18 


5 


500 18 


75 225 2 4.5 


0.3 0.6 1.2 50 












27 


2N2923 


T092 
(74) 


25 


25 


5 


100 25 


90 180 2 10 
(1 kHz) 




10 










04 


2N2924 


TO-92 
(74) 


25 


25 


5 


100 25 


150 300 2 10 
11 kHz) 




10 










04 


2N2925 


TO-92 
(74) 


25 


25 


5 


100 25 


235 470 2 10 
(1 kHz) 




10 










04 


2N2926 


TO-92 
174) 


18 


18 


5 


500 18 


35 470 2 10 
(1 kHz) 




10 










04 


2N3115 


TO-18 


60 


20 


5 


25 50 


40 120 150 10 


0.5 1.3 150 


S 


250 20 


500 




2 


20 


2N3116 


TO-18 


60 


20 


5 


25 50 


100 300 150 10 


0.5 1.3 150 


8 


250 20 


500 




2 


20 


2NI3299 


TO-6 


60 


30 


5 


10" 50 


20 500 10 
20 150 1 
40 120 150 10 
35 10 10 
25 1 10 
20 100 /iA 10 


0.22 1.1 150 
0.6 1 5 500 


8 


250 50 


150 




4 


20 


2N330O 


TO-5 


60 


30 


5 


10* 50 


50 500 10 
50 150 1 
100 300 1 50 10 
75 10 10 
50 1 10 
35 100jjA 10 


0.22 1.1 150 
6 1.5 500 


8 


250 50 


150 




4 


20 


2N3301 


TO-18 


60 


30 


5 


10* 50 


20 500 10 


0.22 1.1 150 


8 


250 50 


150 




4 


20 










20 1 50 1 
40 120 150 10 
35 10 10 
25 1 10 
20 100 mA 10 


0.6 1 .5 500 














2N3302 


TO-18 


60 


30 


5 


10' 50 


50 500 10 
50 1 50 1 
100 300 150 10 
75 10 10 
50 1 10 
35 100mA 10 


0.22 1.1 150 
0.6 1 .5 500 


8 


250 50 


150 




4 


20 


2N3390 


TO-92 
(74) 


25 


25 


5 


100 18 


400 800 2 4.5 




10 










04 


2N3391 


TO-92 
(74) 


25 


25 


5 


100 18 


250 500 2 4.5 




10 










04 



JSjM GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 

No. 


Case 
Style 


VcBO 
(V) 


VCEO 
(V) 


v EBO 
(V) 


CB0 VPR 

InAI <°> ,«-B 
.. (V) 


... hFE .. » %f 

Min Max (mA) (V) 


VCEISAT) V BE(SAT | 

(V) & (V) @ , C , 
(mA) 

Max Min Max 


Cob 
(pF) 


(MHz) @ , c , 
mA 

Min Max 


'off 
Ins) 


NF 
(dB) 


Test 

Condition 


Process 
No. 




Min 


Min 


Min 


Max 


Max 


Max 


Max 


2N3391 


TO-92 
(74I 


25 


25 


5 


100 18 


250 500 2 4.5 




10 






5 


5 


04 


2N3392 


TO-92 
(74) 


25 


25 


5 


100 18 


150 300 2 4.5 




10 










04 


2N3393 


TO-92 
(74) 


25 


25 


5 


100 18 


90 180 2 4.5 




10 










04 




























2N3394 


TO-92 
(74) 


25 


25 


5 


100 18 


55 110 2 4.5 




10 










0.4 


2N3395 


TO-92 
(74) 


25 


25 


5 


100 18 


1 50 500 2 4.5 




10 










04 


2N3396 


TO-92 
I74I 


25 


25 


5 


100 18 


90 500 2 4.5. 




10 










04 


2N3397 


TO-92 
(74) 


25 


25 


5 


100 18 


55 500 2 4.5 




10 










04 




TO-92 
(74) 


25 


25 


5 


100 18 






10 










04 


55 800 2 4.5 












2N3414 


TO-92 
(74) 


25 


25 


5 


100 25 


75 225 2 4.5 


0.3 0.6 1.3 50 












19 


2N3415 


TO-92 
(74I 


25 


25 


5 


100 25 


180 540 2 4.5 


0.3 0.6 1.3 50 












04 


2N3416 


TO-92 
(74) 


50 


50 


5 


100 25 


75 225 2 4.5 


0.3 0.6 1.3 50 












04 


2N3417 


TO-92 
(74) 


50 


50 


5 


100 25 


180 540 2 4.5 


0.3 0.6 1.3 50 












04 


2N3641 


TO-92 
(72) 


Same as PN3641 , see page 1-22 for explanation 


19 








2N3642 


TO-92 
(72) 


Same as PN3642, see page 1-22 for explanation 


19 








2N3643 


TO-92 
(72) 


Same as PN3643, see page 1-22 for explanation 


19 


2N3678 


TO-5 


75 


55 


6 


10 60 


25 500 10 
20 150 1 
40 120 150 10 
35 10 10 
25 1 10 
20 100 juA 10 


0.4 0.6 1.2 150 
1 .0 2.0 500 






250 




2 


20 



TEST CONDITIONS: 

(1) l C = 300 M, V CE - 10V, f = 1kHz. (2) l C = 150mA, V CC = 30V, l B 1 = l B 2 » 15mA. (3) l c = 100 mA, V CE ■= 10V, f = 1kHz. (4) l C = 300mA, V cc = 25V, l B 1 - l B 2 = 30mA. (5) l C ■= 100 /jA, 
V CE - 4.5V, f = 15.7kHz. (6) l C = 10mA, V C C = 3V, Igl = l B 2 = 1mA. (7) l C = 100 mA, V CE = 5V, f = 15.7kHz. (8) l C = 250 M. V CE = 5V, f = 10Hz-15.7kHz. (9) l C - 3mA, V CE = 10V, 
f = 1MHz. 110) l c = 10 mA, V CE = 5V,f = 15.7kHz. 



Siojsisueji NdN 



NPN Transi 



AA GENERAL PURPOSE AMPS AND SWITCHES (Continued) 







V C BO 


V C EO 


VEBO 


' CBO Vr H 




VCE(SAT) V BE(SAT) . 

(v) a (vi e,,^ 

Max Min Max 


C b 
(pF) 
Max 




•off 
(nsl 
Max 


NF 


Test 
Condition 


Typ. 

No. 


Case 
Style 


(VI 
Min 


(V) 
Min 


(V) 
Min 


,„A. • « 
Max 


hFE 9 'C & V CE 
Min Max * (mAI " (V) 


(MHz) @ , c „, 
... ., (mAI 
Mm Max 


(dBI 
Max 


2N3691 


TO-92 
(72) 


Same as PN3691. see page 1-22 for explanation 


i 




2N3692 


TO-92 
(72! 


Same as PN3692. see page 1-22 for explanation 






2N3693 


TO-92 
(72) 


Same as MPS3693, see page 1-24 for explanation 






2N3694 


TO-92 
(72) 


Same as PN3694, see page 1-22 for explanation 












2N3704 


TO-92 
(74) 


50 


30 


5 


100 20 


100 300 50 2 


0.6 100 


12 


100 50 
































2N3705 


TO-92 
(74) 


50 


30 


5 


100 20 


50 150 50 2 


0.8 100 


12 


100 50 
































2N3706 


TO-92 
(74) 


40 


20 


5 


100 20 


30 600 50 2 


1.0 100 


12 


100 50 








2N3721 


TO-92 
(74) 






500 18 


60 660 2 10 
(1 kHz) 




12 
































2N3793 


TO-92 
(74) 


40 


20 


5 


500 15 


20 100 10 
20 120 10 10 
10 1 10 


0.4 10 


10 


100 600 10 












2N3794 


TO-92 
(74) 


40 


20 




500 15 




0.4 10 


10 










5 


100 100 10 
100 600 10 10 
35 1 10 


100 600 1 


































2N3827 


TO-92 
(74) 


60 


45 


4 


100 30 


100 400 10 10 




3.5 


200 800 10 








2N3858 


TO-92 
(74) 


30 


30 


4 


500 18 


60 120 2 4.5 




4 


90 250 2 








2N3859 


TO-92 
(74) 


30 


30 


4 


500 18 


100 200 2 4.5 




4 


90 250 2 








2N3860 


TO-92 
(74) 


30 


30 


4 


500 18 


150 300 2 4.5 




4 


90 250 2 








2N3903 


TO-92 
(72) 


60 


40 


6 




15 100 1 
30 50 1 


0.2 0.6 0.85 10 


4 


250 10 


225 


6 


6/7 












50 150 10 1 
35 1 1 


0.3 0.95 50 
























20 100fiA 1 














2N3904 


TO-92 
(72) 


60 


40 


6 


30 


30 100 1 
60 50 1 
100 300 10 1 
70 1 1 
40 100 mA 1 


0.2 0.65 0.85 10 
0.3 0.95 50 


4 


300 10 


250 


5 


6/7 



AM GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


V C BO 
(V) 


V C EO 
IV) 


VEBO 
(V) 


ICBO 
InA) » 


V C B 
(VI 


h 

Min 


Max 




V C E 
(V) 


VCE(SAT) 
(VI 


Vbe(sat) 
& (vi e 


l c 
(mA) 


Cob 
IpFI 


H 

(MHz) @ 


■c 

(mA) 


'off 

(ns) 


NF 
(dBI 


Test 
Condition 


Process 
No. 


Min 


Min 


Min 


Max 




Max 


Min Max 


Max 


Min Max 


Max 


Max 






2N3946 


TO-18 


60 


40 


6 




20 
50 


150 


50 
10 


1 
1 


0.2 


0.6 0.9 
1 .0 


10 
50 


4 


250 


10 


375 


5 


6/7 


23 


2N3947 


TO- 18 


60 


40 


6 




40 




50 


1 


0.2 


0.6 0.9 


10 


4 


300 


10 


450 


5 


6/7 


23 














100 

90 

60 


300 


10 
1 

100 mA 


1 
1 
1 


0.3 


1.0 


50 
















2N4123 


TO-92 
(72! 


40 


30 


5 


50 


20 


25 
50 


150 


50 
2 


1 
1 


0.3 


0.95 


50 


4 


250 


10 




6 


7 


23 


2N4124 


TO-92 
(72! 


30 


25 


5 


50 


20 


60 
120 


360 


50 
2 


1 

1 


0.3 


0.95 


50 


4 


300 


10 




5 


7 


23 


2N4140 


TO-92 
(721 


Same as PN4140, see page 1-22 for explanation 


























19 




























2N4141 


TO-92 


Same as PN4141 . see oaae 1-22 for exDlanation 


























19 




(72) 






































2N4400 


TO-92 
(721 


60 


40 


6 






20 
50 
40 




500 
150 
10 
1 


2 
1 
1 


0.4 
0.75 


0.75 0.95 
1.2 


150 
500 


6.5 


200 


20 


255 




2 


13 






150 


















20 




1 


















2N4401 


TO-92 


60 


40 


6 






40 




500 


2 


0.4 


0.75 0.95 


150 


6.5 


250 


20 


255 




2 


13 




(721 












100 
80 
40 
20 


300 


150 
10 


1 
1 


0.75 


1.2 


500 
































1 

100 w A 


1 
1 






















PN2221 


TO-92 
(721 


60 


30 


5 


10 


50 


20 
20 
40 
35 


120 


500 
150 
150 
10 


10 
1 

10 
10 


0.4 
1.6 


1.3 
2.6 


150 
500 


8 


250 


20 








19 
















25 
20 




1 

100/i A 


10 
10 






















PN2221A 


TO-92 
(72) 


75 


40 


6 


10 


60 


25 
20 
40 
35 


120 


500 
150 
150 
10 


10 

1 

10 
10 


0.3 
1.0 


0.6 1.2 
2.0 


150 
500 


8 


250 


20 


285 




2 


19 
















25 
20 




1 

100 mA 


10 
10 





















TEST CONDITIONS: 

(1) l c - 300 mA, V ce = 10V, f = 1kHz. (2) l c - 150mA, V cc = 30V, l B 1 - l B 2 = 15mA. (31 l c = 100 mA, VqE " 10V. f = 1kHz. (4) lc - 300mA, V cc « 25V, l B 1 - l B 2 - 30mA. (5) l c * 100 mA, 
V CE - 4.5V, f • 15.7kHz. (6) l C - 10mA, V CC = 3V, l B 1 - l B 2 fe 1mA. 17) l C - 100 nK V CE = 5V, f = 15.7kHz. (8) l C = 250 mA, V CE - 5V, f = 10Hz-15.7kHz. (9) l C - 3mA, V C E • 10V, 
f = 1MHz. (10) l C " 10 dA, V CE - 5V, f - 15.7kHz. 



sjojsisubji NdN 



NPN Transistors 



ro 



5 




GENERAL PURPOSE AMPS AND SWITCHES (Continued) 


Type 


Case 


VCBO 
(VI 
Min 


VCEO 
(VI 
Min 


V E BO 
(VI 
Min 


Max 


n FE a. 'C o V CE 
Min Max (mA) (V) 


VCEISATI v BEISATI I 


Cob 
(p-F) 
Max 


(MHz) 9 . 
Mm Max 


•off 
(ns) 
Max 


NF 
(dB) 
Max 


Test 


Process 


No. 


Style 


(VI & (VI @ c 

.. .. ' n,A l 
Max Mm Max 


Condition 


No. 


PN2222 


TO-92 
1721 


60 


30 


5 


10 50 


30 500 10 
50 150 1 
100 300 150 10 
75 10 1 


0.4 1 .3 1 50 
1 .6 2.6 500 


8 


250 20 








19 


PN2222A 


TO-92 
(721 


75 


40 


6 


10 60 


40 500 1 
50 1 50 1 
100 300 150 10 
75 10 1 


0.3 0.6 1.2 150 
1 .0 2.0 500 


8 


300 20 


285 




2 


19 














50 1 1 
35 100 mA 1 
















PN3641 


TO-92 
(72) 


60* 


30 


5 


50* 50 


15 500 10 
40 120 150 10 


0.22 150 


8 


250 50 








19 


PN3642 


TO-92 
(72) 


60 


45 


5 


50* 50 


15 500 10 
40 120 150 10 


0.22 150 


8 


250 50 








19 


PN3643 


TO-92 
(72) 


60 


30 


5 


50* 50 


20 500 10 
100 300 150 10 


0.22 150 


8 


250 50 








19 


PN3691 


TO-92 
(72) 


35 


20 


4 


50 15 


40 160 10 1 


0.7 0.9 10 


3.5 


200 500 10 








23 


PN3692 


TO-92 
172) 


35 


20 


4 


50 15 


100 400 10 1 


0.7 0.9 10 


3.5 


200 500 10 








23 


PN3694 


TO-92 
(72) 


45 


45 


4 


50 30 


100 400 10 1 




6 


200 10 








27 


PN4140 


TO-92 
(72) 


60 


30 


5 




20 500 10 
20 1 50 1 
40 120 150 10 
35 10 10 
25 1 10 
20 100mA 10 


0.4 1.3 150 
1.6 2.6 500 


8 


250 20 


310 




2 


19 


PN4141 


TO-92 


60 


30 


5 




30 500 10 


0.4 1.3 150 


8 


250 20 


310 




2 


19 




(72) 










50 1 50 1 
100 300 150 10 
75 10 10 
50 1 10 
35 100 |iA 10 


1.6 2.6 500 














PN5127 


TO-92 
(72) 


20 


12 


3 


50 10 


15 300 2 10 


0.3 1.0 10 


3.5 


150 2 








27 


PNB128 


TO-92 
1721 


15 


12 


3 


50 10 


35 350 50 10 
20 10 10 


0.25 1.1 150 


10 


200 800 50 








19 



GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


v CBO 

(VI 


VCEO 
(VI 


v EBO 

(V) 


'CBO v 
InA) B J 8 
Max 


"FE 'c & V CE 
Min Max (mA) (V) 


VCE(SAT) V BE(SAT) . 
(V) & (V) @ (mA) 
Max Min Max 


Cob 
IpFI 


(MHz) ®> C 
Mm Max 


<o!l 

(m) 


NF 

IdBI 


Test 
Condition 


No. 


Min 


Min 


Min 


Max 


Max 


Max 


PN5129 


TO-92 


15 


12 


3 


50 10 


35 350 50 10 


036 1.1 150 
















(721 










20 10 10 




6 












PN5131 


TO-92 
(72) 


20 


15 


3 


50 10 


35 600 10 1 


10 10 


100 10 








27 


PN5132 


TO-92 
(72) 


20 


20 


3 


50 10 


30 400 10 10 


2.0 0.9 10 


3.5 


200 10 








27 


PN5135 


T032 
(72) 


30 


25 


4 


300 15 


60 60" 10 10 
15 2 10 


1.0 1.0 100 


25 


40 500 30 








19 


PN5136 


TO-92 
(72) 


30 


20 


3 


100 20 


20 400 150 1 
20 30 1 


0.25 1.1 150 


35 


40 400 50 








19 


PN5137 


TO-92 
(72) 


30 


20 


3 


100 20 


20 400 150 1 

20 30 1 


0.25 1.1 150 


35 


40 400 50 








19 


EN2222 


TO-92 
(72) 


Same as PN2222, see page 1-22 for explanation 


19 


MPSA10 


TO-92 
(72) 




40 


4 


100 30 


40 400 5 10 




4 


50 5 








27 


MPSA20 
MPSL.01 


TO-92 
(72) 




40 


4 


100 30 


40 400 5 10 




4 


125 5 








02 


TO-92 
(72) 


140 


120 


5 


1 mA 40 


50 300 10 5 


0.2 1.2 10 
0.3 1.4 50 


8 


60 10 








16 


MPS2711 


TO-92 
(72) 


18 


18 


5 


500 18 


30 90 2 4.5 




4 










23 


MPS2712 


TO-92 
(72) 


18 


18 


5 


500 18 


75 225 2 4.5 




4 










23 


MPS2716 


TO-92 


18 


18 


5 


500 18 


75 225 2 4.5 




3.5 










23 




(72) 


























MPS2923 


TO-92 
(72) 


25 


25 


5 


500 25 


90 180 2 10 

(1 kHz) 




12 










04 


MPS2924 


TO-92 
(721 


25 


25 


5 


500- 25 


150 300 2 10 
(1 kHz) 




12 










04 


MPS2925 


TO-92 
(72) 


25 


25 


5 


500 25 


235 470 2 10 
(1 kHzl 




12 










04 


MPS2926 


TO-92 
(72) 


25 


25 


5 


500 18 


35 470 2 10 
(1 kHz) 15 Groups) 




3.5 










04 


MPS3392 


TO-92 
172) 


25 


25 


5 


100 18 


150 300 2 4.5 




10 










04 



TEST CONDITIONS: 

(1) l c - 300 mA. V CE = 10V. f ■ 1kHz. (2) l C " 150mA. V cc = 30V. I B 1 = l B 2 = ISrnA. (3) l C - 100 jiA, V C E • 10V, f = 1kHz. (4) l C = 300mA, V cc ■ 25V, l B 1 - l B 2 • 30mA. (5) l c - 100 mA, 
V CE = 4.5V, f « 15.7kHz. (6) l c » 10mA, V C C ■ 3V, l B 1 - l B 2 • 1mA. (7) l C - 100 (iA, V CE = 5V, f = 15.7kHz. (81 l c - 250 mA. V CE - 5V, f = 10Hz-15.7kHz (9) Ic » 3mA, V CE = 10V, 
I - 1MHz. (10) l C " 10mA, V C e - SV. f = 15.7kHz. 



sjois|Subji NdN 



NPN Trar 




GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


v CBO 
(V) 
Min 


v CEO 
IV) 
Min 


v EBO 
IV) 
Min 


'CBO v 
In A) @ CB 
Max 


"FE , ic g, v CE 
Min Max (mA) (VI 


VCE(SAT) V BE(SAT | 

(vi & (vi @ (m c a| 

Max Min Max 


C b 
IpF) 

Max 


' T ic 

Mm Max 


•off 
(nsl 
Max 


NF 
IdBI 
Max 


Test 
Conditit 


MPS3393 


TO-92 
(72) 




25 




100 18 


90 180 2 4.5 




3.5 










MPS3394 


TO-92 




25 




100 18 


55 110 2 4.5 




3.5 










MPS3395 


TO-92 
(72) 




25 




100 18 


150 500 2 4.5 




3.5 










MPS3396 


TO-92 
(72} 




25 




100 18 


90 500 2 4.5 




3.5 










MPS3397 


TO-92 
(72) 




25 




100 18 


55 500 2 4.5 




3.5 










MPS3398 


TO-92 
(72) 




25 




100 18 


55 800 2 4.5 




3.5 










MPS3642 


TO-92 

(72) 


Same as PN3642, see page 1-22 for explanation 


MPS3693 


TO-92 
(72) 


46 


45 


4 


50 35 


40 160 10 10 




3.5 


200 10 




4 


9 


MPS3694 


TO-92 
(72) 


45 


45 


4 


50 35 


100 400 10 10 




3.5 


200 10 




4 


9 


MPS3704 


TO-92 
(72) 


SO 


30 


5 


100 20 


100 300 50 2 


0.6 100 


12 


100 50 








MPS3705 


TO-92 
(72) 


50 






100 20 


50 150 50 2 


0.8 100 


12 


100 50 








MPS3706 


TO-92 
(72) 


40 






30 600 50 2 


1.0 100 


12 


100 50 








MPS3721 


TO-92 
(721 






500 18 


60 660 2 10 

(1 kHz) 




3.5 










MPS3826 


TO-92 
(72) 


60 


45 


4 


100 30 


40 160 10 10 




3.5 


200 800 10 








MPS3827 


TO-92 
(72) 


60 


45 


4 


100 30 


100 400 10 10 




3.5 


200 800 10 








MPS5172 


TO-92 
(72) 


25 


25 


5 


100 25 


100 500 10 10 


0.25 10 


10 










MPS6512 


T092 

(72) 


40 


30 


4 


50 30 


30 100 10 
50 100 2 10 


0.5 50 


3 5 










MPS6513 


TO-92 
(721 


40 


30 


4 


50 30 


60 100 10 
90 180 2 10 


0.5 50 


3.5 










MPS6514 


TO-92 
(72) 


40 


25 


4 


50 30 


90 100 10 
150 300 2 10 


0.5 50 


3.5 











JLM GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


VCBO 
/v/l 

Min 


V C EO 
(V) 
Min 


v EBO 
(V) 
Min 


' CB0 VfB 
(nA) @ (vl 

Max 


n FE e <C . V CE 
Min Max (mA) (V) 


V CE(SAT) VbE(SAT) 

IV) a (V) <& 

... '"'A' 
Max Mm Max 


Cob 
(pF) 
Max 


' T Ir- 
(MHz) @ . . 
mm- ■■ (mA) 

Mm Max 


«off 
(ns) 
Max 


NF 
(dB) 
Max 


T 

Coni 


MPS6515 


TO-92 
(72) 


40 


25 


4 


50 30 


1 50 1 00 10 
250 500 2 10 


0.5 50 


3.5 










MPS6520 


TO-92 
(72) 




25 


4 


50 30 


200 400 2 10 
100 100 nA 10 


0.5 50 


3.5 






3 


1 


MPS6521 


TO-92 
(72) 




25 


4 


50 30 


200 600 2 10 
150 100jiA 10 


0.5 50 


3.5 






3 


1 


MPS6530 


TO-92 
172) 


60 


40 


5 


50 40 


25 500 10 
40 120 100 1 
30 10 1 


0.5 1.0 100 


5 










MPS6531 


TO-92 
(72) 


60 


40 


5 


50 40 


50 500 10 
90 270 100 1 
60 10 1 


0.3 1.0 100 


5 










MPS6532 


TO-92 
(72) 


50 


30 


5 


100 30 


30 100 1 


0.5 1.2 100 


5 










MPS6564 


TO-92 
(72) 




45 


5 


500 40 


25 10 5 


0.5 10 


4 










MPS6565 


TO-92 
(72) 


60 


45 


4 


100 30 


40 160 10 10 


0.4 10 


3.5 










MPS6566 


TO-92 
(72) 


60 


45 


4 


100 30 


100 400 10 10 


0.4 10 


3.5 


200 10 








MPS6573 


TO-92 
(721 




35 




100 35 


100 100jiA 5 
200 500 10 5 


0.5 10 


12 


100 300 10 








MPS6574 


TO-92 
(72) 




35 




100 35 


100 300 1 5 
(4 Groups) 


0.5 10 


12 


100 300 10 








MPS6675 


TO-92 
(72) 




45 




100 45 


100 100 mA 5 
200 500 10 5 


0.5 10 


12 


100 300 10 








MPS6S76 


TO-92 
(72) 




45 




100 45 


100 300 1 5 
(4 Groups) 


0.5 10 


12 


100 300 10 








NCBT13 


TO-92 
(72) 


60 


40 


4 


100 30 


40 20 1 


0.15 100 


6 


150 20 








NS3903 


TO-18 


60 


40 


6 




15 100 1 
30 50 1 
50 1 50 1 1 
35 1 1 
20 100 mA 1 


0.2 0.65 0.85 10 
0.3 0.95 50 


4 


250 10 


225 




6 



TEST CONDITIONS: 

(1) l C - 300 mA, V ce S 10V, f • 1kHz. (21 l C = 150mA, V CC - 30V, lp,1 = l B 2 = 15mA. (3) l c = 100 mA, V CE = 10V, f = 1kHz. (4) l c = 300mA, V CC = 25V, l B 1 = l B 2 = 30mA. I5l 
V CE = 4.5V, f = 15.7kHz. (6) l C - 10mA, V C C * 3V, l B 1 » Ig2 - 1mA. (7) l c = 100 mA, V CE = 5V, f = 15.7kHz. (8) l C - 250 mA, V C E = 5V, f = 10Hz-15.7kHz. (9) l c = 3m/ 
f - 1MHz. (10) l C = 10 mA, V CE = 5V, f = 15.7kHz. 



SJO)SjSI| 



NPN Transistors 



23 

MM GENERAL PURPOSE AMPS AND SWITCHES (Continued) 


Type 

No. 


Case 
Style 


V C BO 

(VI 


v CEO 
(VI 


VEBO 

(V) 


'ceo v 

(nA) e \™ 
Max 


"FE 3 'c & v CE 

Min Max (mAI (VI 


V CE(SAT) V BE(SAT) . 
(V) & IV) @ (nl A) 
Max Min Max 


Cob 
(pF) 


,T 'C 
(MHz) @ ,.. 

(mAI 

Mm Max 


•off 
Ins) 


NF 
(dBI 


Test 
Condition 


Process 
No. 


Min 


Min 


Min 


Max 


Max 


Max 


NS3904 


TO-18 


60 


40 


6 




30 100 1 
60 50 1 
100 300 10 1 

70 1 1 


0.2 0.65 0.85 10 
0.3 0.95 50 


4 


300 10 


250 




6 


23 














40 100 nA 1 
















2N4424 


TO-92 
(74) 


40 


40 


5 


100 25 


180 540 2 4.5 


0.3 0.6 1.3 50 












04 


















2N4944 
2N4945 
2N4946 


T092 
(72) 


Same as PN2222A, see page 1-22 for explanation 


19 


2N4951 


TO-92 
(74) 


60 


30 


5 


50 40 


60 200 150 10 
40 10 10 


0.3 1.3 150 


8 


250 20 


400 




2 


13 














20 1 10 
















2N4952 


TO-92 
(74) 


60 


30 


5 


50 40 


100 300 150 10 
75 10 10 
50 1 10 


0.3 1.3 150 


8 


250 20 


400 




2 


13 


2N4953 


TO-92 
(74) 


60 


30 


5 


50 40 


200 600 150 1 
150 10 10 
75 1 10 


0.3 1.3 150 


8 


250 20 


400 




2 


13 




























2N4954 


TO-92 

t~IA\ 
1/**/ 


40 


30 


5 


50 30 


60 600 150 10 


0.3 1.3 150 


8 


250 20 


400 




2 


13 








40 10 10 
20 1 10 






2N4969 


TO-92 
(72) 


Same as PN2221 , see page 1 -21 for explanation 


19 


2N4970 


TO-92 
(72) 




Same as PN2222, see page 1 -22 for explanation 


19 


2N5127 


TO-92 
172) 


Same as PN51 27 , see page 1 -22 for explanation 


27 


2N5128 


TO-92 
(72) 


Same as PN5128, see page 1-22 for explanation 


19 


2N5129 


TO-92 
(721 


Same as PN5129, see page 1-23 for explanation 


19 


2N5131 


TO-92 


Same as PN5131, see page 1-23 for explanation 


27 


2N5132 


TO-92 
(72) 


Same as PN5132, see page 1-23 for explanation 


27 


2N5135 


TO-92 
(721 


Same as PN5135, see page 1-23 for explanation 


19 


2N5136 


TO-92 
(72) 


Same as PN5136, see page 1-23 for explanation 


19 



MJM GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 

No. 


Case 
Style 


VcBO 
(VI 


v CEO 
(VI 


v EBO 
(V) 


'CBO 
(nAI ( 


a V CB 
(VI 


h 
Min 


FE 

Max 


e r & 
(niA) 


V C E 
(VI 


VCEISATI 
(V) 


V BE(SAT) 
& (VI @ 


'C 
(mA) 


c ob 
IpF) 


«T 

(MHz) @ 


'C 
(mA) 


•off 
(ns) 


NF 
IdBI 


Test 
Condition 


Process 
No. 


Min 


Min 


Min 


Man 


Max 


Min Mi. 

iviin ividx 


Max 


Min Max 


Max 


Max 


2N5137 


TO-92 


Same as PN51 37, see page 1 -23 for explanation 
























19 




(72! 






































2N5172 


TO-92 
(74) 


25 


25 


5 


100 


25 


100 


500 


10 


10 


0.25 




10 


10 










04 


2N5219 


TO-92 
I72I 


20 


15 


3 


100 


10 


35 


500 


2 


10 


0.4 


1.0 


10 


4 


150 


10 








27 


2N5220 


TO-92 

(7*31 
\ It) 










10 


30 
25 


600 


50 
10 


10 


0.5 


1.1 


150 


10 


100 


20 








13 


15 


15 


3 


100 








2 N 5223 


TO-92 
(72) 


25 


20 


3 


100 


10 


50 


800 


2 


10 


0.7 


1.2 


10 


4 


150 


10 








27 


2N5225 


TO-92 
(721 


25 


25 


4 


300 


15 


30 
25 


600 


50 
50 


10 
10 


0.8 


1.0 


100 


20 


50 


20 








13 


2N5550 


TO-92 
(72) 


160 


140 


6 


100 


100 


20 
60 
60 


250 


50 
10 
1 


5 
5 
5 


0.15 
0.25 


1.0 

1.2 


10 
50 


6 


100 300 


10 




10 


8 


16 


2N5551 


TO-92 
(721 


180 


160 


6 


50 


120 


30 
80 
80 


250 


50 
10 
1 


g 
5 
5 


15 
0.2 


1 
1.0 


10 
50 


g 


100 300 


10 




g 


g 


1 6 


2N5816 


TO-92 
(77) 


50 


40 


5 


100 


25 


25 
100 


200 


500 
2 


2 
2 


0.75 


1.2 


500 


15 


100 


50 








13 


TN2219 


TO-92+ 
(911 


60 


30 


5 


10 


50 


30 
50 
100 


300 


500 
150 
150 


10 
1 

10 


0.4 

1.6 


1.3 

2.6 


150 
500 


8 


50 


20 








19 














75 
50 
35 




10 
1 

0.1 


10 
10 
10 




















TN2219A 


TO-92+ 
(911 


75 


40 


6 


10 


60 


40 
50 
100 


300 


500 
150 
ISO 


10 

1 

10 


0.3 
1.0 


0.6 1.2 
2.0 


150 
500 


8 


60 


20 




4 


3 


19 
















75 
50 
35 




10 

1 

0.1 


10 

10 
10 





















TEST CONDITIONS: 

(II l C » 300 MA, V CE = 10V, f = 1kHz. (2) l C - 150mA, V cc = 30V, Igl = Ig2 • 15mA. (3) I c - 1 00 (iA, V C E " 10V, f = 1kHz. (4) l C = 300mA, V cc = 25V, Igl - Ib 2 * 30mA. (5) l c = 100 mA, 
V CE » 4.5V, f = 15.7kHz. (61 l C = 10mA, V CC - 3V, lg' = Ig2 = 1mA. (71 l c = 100 mA, V ce = 5V, f = 15.7kHz. (8) l c = 250 mA, V C E - 5V, f - 10Hz-15.7kHz. (9) l c = 3mA, V CE t 10V, 
f = 1MHz. (10) I C = 10)iA, V CE = 5V,f = 15.7kHz. 



sicnsisueji NdN 



NPN Transistors 



2 



MEDIUM POWER 



Type 
No. 


Case 


VcBO 
(V) 
Mm 


V C EO 
(V) 
Min 


(V) CBO , 
Max 


, V CB 
(VI 


"FE , 
Min Max 


(mA) 


V C E 
(V) 


v CE(sat) 
(V) & 
Max 


v BE(sat) 
(V) < 
Min Max 


, 'c 

■ (mA) 


Cob 
(pF) 
Max 


ft 

(MHz) <° 
Min Max 


ic 

(mA) 


toff 
(ns) 
Max 


NF 
(dB) 
Max 


Test 
Condition 


Process 
No. 


2N699 


TO-39 


120 


60 


5 


2 


60 


40 


120 


150 


10 


5 


1.3 


150 


20 


50 


50 








12 


2N2017 


TO-39 


60 


60 




lOfiA 


30 


20 
50 
20 












200 














8 


200 


1A 

200 mA 
10 mA 


15 
10 
10 


2 














12 


2N2102 


TO-39 


120 


65 


7 


2 


60 


10 
25 
40 


120 


1A 
500 
150 


10 
10 
10 


0.5 


1.1 


150 


15 


60 


50 




6 


1 


12 












35 
20 
10 




10 
0.1 
0.01 


10 
10 
10 
















2N2192 


TO-39 


60 


40 


5 


10 


30 


15 
35 
70 




1A 
500 
150 


10 
10 

1 


0.35 


1.3 


150 


10 


50 


50 








12 
















100 

75 

15 


300 


150 

10 

0.1 


10 
10 
10 






























































2N2192A 


TO-39 


60 


40 


5 


10 


30 


15 

35 
70 


15 


1A 
500 
150 


10 
10 

1 


0.25 


1.3 


150 


20 


50 


50 








12 
















100 

75 

15 


300 


150 

10 

0.1 


10 
10 
10 




















2N2193 


TO-39 


80 


50 


8 


10 


60 


15 
20 




1A 
500 


10 
10 


0.35 


1.3 


150 


20 


50 


50 








12 














30 
40 
30 
15 


120 


150 
150 


1 

10 






































10 

0.1 


10 
10 






















2N2193A 


TO-39 


80 


50 


8 


10 


60 


15 
20 




1A 
500 
150 
150 
10 


10 
10 

1 

10 
10 


0.25 


1.3 


150 


20 


50 


50 








12 
















30 
40 
30 


120 




























15 




0.1 


10 


















2N2195 


TO-39 


45 


25 


5 


100 


30 


10 




150 


1 


0.35 


1.3 


150 


20 


50 


50 








12 












20 




150 


10 
















2N2195A 


TO-39 


45 


25 


5 


100 


30 


10 
20 




150 
150 


1 

10 


0.25 


1.3 


150 


20 


50 


50 








12 








































23 

SlM MEDIUM POWER (Continued) 



Type 

No. 


Case 
Style 


V C80 


VCEO 


v EBO 


ices' 
'. C i? « 

(nA) 
Max 


. VCB 
(VI 








(VI 


v CEIsatl 
(V) & 
Max 


VBE(sat) 
(V) 
Min Max 




c ob 
<pF) 
Max 


*T 




•off 
Ins) 
Max 


NF 


Test 
Condition 


Process 
No. 


(VI 
Min 


(V) 
Min 


(VI 
Min 


h 

Min 


FE 

Max 


(mAI 


(mAI 


(MHz) <9> 
Min Max 


'c 

(mAI 


IdB) 
Max 


2N2243 


TO-39 


120 


80 


7 


10 


60 


15 
30 




500 
150 


10 

1 


0.35 


1.3 


150 


15 


50 


50 








12 
















To 

15 


120 


150 

10 

0.1 


10 
10 
10 
















2N2243A 


TO-39 


120 


80 


7 


10 


60 


15 
30 


120 


500 
150 


10 

1 


0.25 


1.3 


150 


15 


50 


50 








12 
















2 

15 


150 

10 

0.1 


10 
10 
10 






















2M2270 


TO-39 


60 


45 


7 


50 


60 


50 
30 


200 


150 
1 


10 
10 


0.9 


1.2 


150 


15 


100 


50 




g 


i 


12 


2N2657 


TO-39 


80 


50 


8 


100 


60 


15 
40 


120 


5A 
1A 


6 

2 


0.5 
3 


1.5 
2.5 


1A 
5A 


150 


20 


200 


1.5 




2 


34 


2N2658 


TO-39 


100 


80 


8 


100 


60 


15 
40 


120 


5A 
1A 


6 
2 


0.5 
3 


1.5 
2.5 


1A 
5A 




20 


200 


1.5 




1 


34 


2N2890 


TO-39 


100 


80 


5 


50 M 


60 


25 




2A 


5 


0.5 


1.2 


1A 


70 


30 


200 


1.5 




3 


34 












30 
20 


90 


1A 
100 


2 
2 


0.75 


1.3 


2A 














2N2891 


TO-39 


100 


80 


5 


50 MA 


60 


40 




2A 


5 


0.5 


1.2 


1A 


70 


30 


200 


1.5 




3 


34 












50 
35 
50 


150 
300 


1A 
100 
50 


2 
2 
10 


0.75 


1.3 


2A 














2N3019 


TO-39 


140 


80 


7 


10 


90 


15 
50 
100 


300 


1A 
500 
150 


10 
10 
10 


0.2 


1.1 


150 


12 


100 


50 




4 


4 


12 












90 
50 




10 

0.1 


10 
10 
















































100 400 










12 


2N3019 

J. JTX, JTXV 


TO-39 


140 


80 


7 


10' 


90 


15 

50 

100 

90 

50 


200 
300 

200 


1A 

500 
150 
10 
0.1 


10 
10 
10 
10 
10 


0.2 
0.5 


1.1 


150 
500 


12 


50 




4 


4 



TEST CONDITIONS: 

ID l C = 300 liA, V C E - 10V, f = 15.7kHz. (2) l c = 1A. V CC = 20V. Igl ■ Ip2 = 100mA. (3) l C - 1A, V cc = 20V. I B 1 = l B 2 = 50mA. (4) l C = 100 mA, V CE = 10V, f = 1kHz. (5) l c = 150mA, 
V CC = 20V, l B 1 = l B 2 - 7.5mA. (61 l c = 30 nA, V CE = 10V, f = 1kHz. (7) l c - 150mA. V EB = 2V, l B 1 - l B 2 = 15mA. (8) l C - 500 mA, V ce = 10V. f - 1kHz. (9) l c = 2A, V cc = 40V, 
l B 1 = | B 2 = 200mA. 



sjoisjsueji NdN 



MEDIUM POWER (Continued) 



Type 
No. 


Case 
Style 


VcBO 
IVI 
Min 


VcEO 
(VI 
Min 


VEBO ICBO Vrn 

(VI "CBO ffl 
Max 


hrr |a \f r-i r~ 

n FE & 'C o V CE 
Min Max Ml K (VI 


v CE(satl v BE(satl . 
(VI & (VI (9, C A , 

>ai (mAI 

Max Mm Max 


c ob 
(pFl 
Max 


(MHzl @ , C A , 
... ,, (mAI 
Mm Max 


'off 
(nsl 
Max 


NF 
(dBI 
Max 


Test 
Condition 


2N3020 


TO-39 


140 


80 










80 50 








7 10 90 


15 1A 10 
30 100 500 10 
40 120 150 10 
40 120 10 10 
30 100 0.1 10 


0.2 1.1 150 
0.5 500 


12 








2N3053 


TO-39 


60 












100 50 








40 


5 250 30 


50 250 150 10 
25 150 2.5 


1.4 1.7 150 


15 








2N3107 


TO-39 


100 


60 


7 10 60 


40 500 10 
100 300 150 1 
35 0.1 10 


0.25 1.1 150 
1 .0 2.0 1 A 


20 


70 50 


1000 


7 


5/6 


2N3108 


TO-39 


100 


60 


7 10 60 


25 500 10 
40 120 150 10 

20 0.1 10 


0.25 1.1 150 
1.0 2.0 1A 


20 


60 50 


600 


7 


5/6 


2N3109 


TO-39 


80 


40 


7 10- 60 


40 500 10 


0.25 1.1 150 


25 


70 50 


1000 


7 


5/6 












100 300 150 1 
35 0.1 10 


1 .0 2.0 1 A 












2N3110 


TO-39 


80 


40 


7 10* 60 


25 500 10 
40 120 150 1 
20 0.1 10 


I.I I 3U 

1.0 2.0 1A 


25 


60 50 


600 




5/6 


2N3114 


TO-39 


150 


150 


5 10 100 


30 120 30 10 
15 0.1 10 


1 .0 0.9 50 


9 


40 30 








2N3498 


TO-39 


100 


100 


6 50 50 


15 500 10 
40 120 150 10 


0.2 0.8 10 
0.25 0.9 50 


10 


150 20 


















35 10 10 
25 1 10 
20 0.1 10 


0.6 1.4 300 












2N3498 


TO-39 


100 


100 


6 50 50 


15 500 10 
40 120 150 10 
35 10 10 
25 1 10 
20 0.1 10 


0.2 0.8 10 


10 


150 800 20 


1150 


16 


7/8 












0.6 1.4 300 












2N3498 
J. JTX, 
JTXV 


TO-39 


100 


100 


6 50 50 


15 500 10 
40 120 150 10 
35 10 10 
25 1 10 
20 0.1 10 


0.2 0.8 10 


10 


150 800 20 


1150 


16 


7/8 










0.6 1 .4 300 












2N3499 


TO-39 


100 


100 


6 50 50 


20 500 10 
100 300 150 10 
75 10 10 
50 1 10 
35 0.1 10 


0.2 0.8 10 


10 


150 20 


















0.25 0.9 50 
0.6 1 .4 300 













NPN Trans 




MEDIUM POWER (Continued) 



Type 

No. 


Case 

Style 


VcBO 
(V) 
Min 


v ceo 

(V) 
Min 


V , EB .° ICBO Vra 
(V) ^OU & w Co 

- M. A .' 


hcc \r* V/">e 
" @ C tii CE 

Min Max (mA) (V) 


v CE(sat) v BE(satl . 
(V) 8. (V) @. C A1 
Max M,n Max ,mA ' 


c ob 
(pF) 
Max 


(MHz) #, C 
... .. ImA) 
Mm Max 


•off 
Ins) 
Max 


NF 
IdB) 
Max 


Test 
Condition 


Process 
No. 


























2N3499 

J, JTX, JTXV 


TO-39 


100 


100 


6 50 50 


20 500 10 
100 300 150 10 
75 10 10 
50 1 10 
35 0.1 10 


0.2 0.8 10 
6 14 100 


10 


150 800 20 


1150 


16 


7/8 


08 


2N3500 


TO-39 


150 


150 


6 50 75 


15 300 10 
40 120 150 10 


0.2 0.8 10 


8 


150 20 








0.8 












•j*> 1U IU 

25 1 10 
20 0.1 10 


0.4 1.2 160 














2N3500 

J, JTX, JTXV 


TO-39 


150 


150 


6 50 76 


15 300 10 
40 120 150 10 
35 10 10 
25 1 10 
20 0.1 10 


0.2 0.8 10 
0.4 1.2 150 


8 


150 800 20 


1150 


16 


7/8 


08 


























2N3S01 


TO-39 


150 


150 


6 SO 75 


20 300 10 
100 300 150 10 
75 10 10 
50 1 10 
35 0.1 10 


0.2 0.8 10 
50 

0.25 0.9 150 
0.4 1.2 


8 


150 20 








08 


2N3501 


TO-39 


150 


150 


6 50 75 


20 300 10 


0.2 0.8 10 


8 


150 800 20 


1150 


16 


7/8 


08 


J. JTX, JTXV 










100 300 150 10 
76 10 10 
50 1 10 
35 0.1 10 


0.4 1.2 150 


2N3566 


TO-92 
(72) 


Same as PN3566, see page 1-39 for explanation 


14 


2N3567 


TO-92 
(72) 


Same as PN3567, see page 1-39 for explanation 


14 


2N3568 


TO 92 
(72) 


Same as PN3568, see page 1-39 for explanation 






12 




2N3569 


TO-92 
(72) 


Same as PN3569, see page 1-39 for explanation 


14 


2N3665 


TO-39 


120 


80 


10 50 60 


25 500 10 
40 120 150 10 
30 10 10 


0.5 1.2 ISO 
1.2 1.8 500 


12 


60 50 








12 



TEST CONDITIONS: 

11) lc ■ 300 mA, V CE - 10V, f « 15.7kHz. (2) l c - 1A, V cc - 20V. I B 1 - <B 2 * 100mA. (3) l c = 1A, V cc = 20V, l B 1 - Ib 2 " 60mA. (4) l c = 100 >iA, V CE - 10V, f - 1kHz. (5) l c - 150mA, 
V CC - 20V, Ib 1 " l B 2 - 7.6mA. (6) l C = 30 (lA, V CE - 10V, f - 1kHz. (7) l c • 150mA, V EB - 2V, l B 1 - l B 2 ■ 15mA. (8) l c - 500 mA. V CE " 10V, f - 1kHz. (9) l c - 2A, V cc - 40V, 
l B 1-l B 2 = 200mA. 



sjoisisubji NdN 



NPN Transistors 



MjM MEDIUM POWER (Continued) 



Type 

No. 


Case 
Style 


V C BO 
(V) 
Min 


V C EO 
(VI 
Min 


(VI CB0 a V CB 
Max 


"FE « 'C . VCE 
Min Max (mAI ™ (VI 


VcE(satl V BE(sat | 

ivi & (vi §>. C A , 

... .. ImAI 
Max Mm Max 


C b 
(pFI 
Max 


fT >C 

... ,, (mA) 
Mm Max 


•off 
(ml 
Max 


NF 
(dBI 
Max 


Test 
Condition 


Process 
No. 


2N3666 


TO-39 


120 


80 


10 50 60 


50 500 10 
100 300 150 10 
70 10 10 


0.5 1.2 150 
1 .2 1 .8 500 


12 


60 50 








12 


2N3700 

J, JTX. JTXV 


TO-18 


140 


80 


7 10 90 


15 1A 10 
50 500 10 
100 300 150 10 
90 10 10 
50 1 10 


0.2 1.1 150 
0.5 500 


12 


100 200 5 




4 


4 


12 


2N3700 


TO-18 


140 


80 


7 10 90 


15 1A 10 
50 200 500 10 
100 300 1 50 10 
90 10 10 
50 200 01 10 


0.2 1.1 150 
0.5 500 


12 


100 400 50 




4 


4 


12 


2N3742 


TO-39 


300 


300 


7 200 200 


20 50 20 
20 200 30 10 
15 10 10 
10 3 10 


0.75 1.0 10 
1 .0 1 .2 30 


6 


60 10 








48 


2N3945 


TO-39 


70 


50 


8 40 60 


20 500 10 
40 250 150 10 
25 10 10 


1 .8 1 .8 500 
0.5 1.2 150 


12 


60 50 








12 


2N4237 


TO-39 




40 


100mA 50 


15 1A 1 
30 500 4 
30 150 250 1 


0.6 1.5 1A 
0.3 500 


100 


1 100 








14 


2N4924 


TO-39 


100 


100 


5 100 50 


40 120 150 10 
35 10 10 
25 1 10 


0.25 10 
0.4 50 


10 


10 500 20 








12 


2N4926 


TO-39 


200 


200 


7 100 100 


20 50 20 
20 200 30 10 
15 10 10 
10 3 10 




6 


30 300 20 








48 


2N4927 


TO-39 


250 


250 


7 100 150 


20 50 20 
20 200 30 10 
15 10 10 
10 3 10 




6 


30 300 20 








48 


2N5148 


TO-39 




80 


1 mA' 60 


5 3A 5 
15 2A 5 
30 90 1A 5 
20 50 5 


0.85 1.5 200 
0.46 1.2 100 


70 


50 200 








34 



JSjA MEDIUM POWER (Continued) 



Type 
No. 


Case 
Style 


VcBO 

IV) 


v CEO 
(VI 


Vebo 

(V) 


'ces' 

'CBO @ 
(nA) 


V C B 

'VI 


hFE 
Min Max 


(mAI 


S (VI 


VcElsatl 
(V) 8 


v BE(sat) 

(V) 


" (mAI 


c ob 
(pFI 


fT 

(MHz) @ 


ic 

(mAI 


•off 
Insl 


NF 
(dBI 


Test 
Con d i t i on 


Process 
No. 


Min 


Min 


Min 


Max 




Max 


Min Max 


Max 


Min Max 


Max 


Max 






2N5150 


TO-39 




80 




1 mA* 


60 


15 




3A 


5 


046 


1.2 


100 


70 


60 


200 








34 












30 
70 


200 


2A 
1A 


5 
5 


5.0 


3A 






















50 




50 


5 
























TO-39 




80 




10 mA 


80 


20 




5A 


2 


0.7 


1.2 


2A 




30 


500 


2200 




9 


















30 
30 


120 


2A 
500 


2 
2 


1.2 


1.8 


5A 


























10 mA 




20 
30 


120 


5A 
2A 


2 
2 


0.7 


1.2 


2A 




3(5 


500 


2200 




9 


34 
















30 




500 


2 


1.2 


1.8 


5A 
















40314 


TO-39 




40 




250 


15 


70 


350 


50 


4 


1.4 




150 












12 


40321 


TO-39 




300 




too 


150 


25 


200 


20 


10 














48 


92PE37A 


TO-92+ 
(90) 




45 




100 


60 


40 
40 

25 




500 
250 
50 


2 
2 
2 


0.5 
1.0 




500 
1A 


30 


50 


200 








38 


92PE37B 


TO-92+ 
(90) 




60 




100 


80 


40 
40 
25 




500 


2 
2 
2 


0.5 
1.0 




500 
1 A 


30 


50 


200 








38 


92PE37C 


TO-92+ 




80 




100 


100 


40 
40 
25 




500 
250 
50 


2 
2 
2 


0.5 
1.0 




500 
1A 


30 


50 


200 








38 


92PE487 


TO-92+ 
(90) 


160 


160 


7 


50 


100 


30 
15 
15 




30 
10 
1 


10 
10 
10 


1.0 




30 


3 










48 


92PE488 


TO-92+ 
(90) 


250 


250 


7 


50 


200 


30 
15 
15 




30 
10 
1 


10 
10 
10 


1.0 




30 


3 










48 


92PE489 


TO-92+ 
(90) 


300 


300 


7 


50 


200 


30 
15 
15 




30 
10 
1 


10 
10 
10 


1.0 




30 


3 










48 


92PU01 


TO-92+ 
(91) 




30 




100 


40 


50 
60 
55 




1A 
100 
10 


1 

1 
1 


0.5 




1A 


30 


1000 


50 








37 


92PU01A 


TO-92+ 
(91) 




40 




100 


50 


50 
60 
55 




1A 
100 
10 


1 
1 
1 


0.5 




1 A 


30 


100 


50 








37 



TEST CONDITIONS: 

(1) l C - 300 juA. V CE - 10V, f - 15.7kHz. (2) l c = 1A, V C C " 20V, l B 1 - l B 2 - 100mA. (3) l C = 1A, V cc = 20V, l B 1 • l B 2 = 50mA. (4) l C - 100 mA, V CE ■ 10V, f - 1kHz. (51 l C • 150mA, 
V C C ■ 20V, l B 1 - l B 2 - 7.5mA. (6) l c = 30 uA. V CE - 10V. f = 1kHz. (7) l c = 150mA, V EB - 2V, l B 1 = l B 2 ■= 15mA. (8) l C - 500 mA, V ce - 10V, f - 1kHz. (9) l c - 2A, V cc = 40V, 
l B 1 =| B 2 = 200mA. 



sjoisisueji NdN 



NPN Tra 



mM MEDIUM POWER (Continued) 













ices* 

'pro 
(nA) 
Max 














v BE(sat) 
(V) 
Min Max 










NF 
(dB) 
Max 




Type 

No. 


Case 
Style 


VcBO 
(V) 
Min 


VCEO 
(V) 
Min 


V E BO 

(V) 
Min 


(V) 


h 

Min 


FE 

Max 


(mAI 


(VI 


v CE(sat) 
IVI & 
Max 


— Ip 
(mAI 


Cob 
(pF) 
Max 


(MHz) S> c 
... .. 1mA) 
Min Max 


<off 
Ins) 
Max 


T f 
Cone 


92PU05 


TO-92+ 
(911 




60 




100 


40 


20 
50 
80 




500 
250 
50 


1 

1 

1 


0.35 




250 


30 


50 200 








92PU06 


TO-92+ 
(91) 




100 




100 


80 


20 
50 
80 




500 
250 
50 


1 
1 

1 


0.35 




250 


30 


60 200 








92PU10 


TO -92+ 
(911 




300 




100 


200 


40 
40 

25 




30 
10 

1 


1 
10 
10 


0.75 




30 


3 5 












































92PU100 


TO-92+ 
(91) 


100 


30 




100 


80 


100 
100 


300 


350 
10 


2 
2 


0.35 




350 


20 


50 100 








92PU391 


TO-92+ 
(911 


200 


200 


6 


100 


160 


40 

25 




10 

1 


10 
10 


2.0 


20 


20 


2.5 


50 10 








92PU392 


TO-92+ 
(91) 


250 


250 


6 


100 


200 


40 
25 




10 


10 
10 


2.0 


2.0 


20 


2.5 


50 10 






















1 














92PU393 


TO-92+ 
(91) 


300 


300 


6 


100 


260 


40 
25 




10 

1 


10 
10 


2.0 


2.0 


20 


2.5 


■— r r — 

50 10 














































D40D1 


TO-202 
(35) 




30 




100- 


45 


10 
50 


150 


1A 
100 


2 
2 


0.5 


1.5 


500 












D40D2 


TO-202 








20 




1A 


2 


0.5 


1.5 


500 














(35) 




30 




100* 


45 


120 


360 


100 


2 


















040D3 


TO-202 
(35I 




30 




100' 


45 


10 




1A 


2 


























290 




100 


2 




l.O 














D40D4 


TO-202 
(35) 




45 




100' 


60 


10 
50 


150 


1A 

100 


2 
2 


0.5 


1.5 


500 












D40D5 


TO-202 
(35) 




45 




100' 


60 


120 
10 


360 


1A 
100 


2 
2 


0.5 


1.5 


500 












D40D6 


TO-202 




60 




100" 


75 


10 




1A 


2 


10 


1.6 


500 














(351 








50 


160 


100 


2 


















D40D8 


TO-202 
(35) 




60 




100' 


75 


10 

120 


360 


1A 
100 


2 
2 


1.0 


1.5 


500 












D40D10 


TO-202 




75 




ion' 


no 


10 




1A 


2 


1.0 


15 


500 












(35) 








50 


150 


100 


2 















D40011 


TO-202 
(361 




75 




100* 


90 


10 

120 


360 


1A 
100 


2 
2 


1.0 


1.5 


500 












D40D13 


TO-202 

(35) 




75 


100* 90 


50 


150 


100 


2 


1.0 


1.5 


500 













AM MEDIUM POWER (Continued) 



Type 


Case 
Style 


v CBO 
(V) 


v CEO 
(V) 


v EBO 
(V) 


'CES* 

(nAI 18 
Max 


V CB 




n FE 


e ' c 


& VCE 


v CEIsat) 
(VI & 
Max 


v BE(satl 
(V) 
Min Max 




C D b 
(pF) 
Max 


' T <C 

IMrUJ iff 


toff 
(ns) 
Max 


NF 
(dB) 


Test 


Process 


No. 


Min 


Min 


Min 


(V) 


Min 


Max 


IntAI 


* (V) 


ImAI 


mmi mm 1mA) 

Mm Max 


Max 


Condition 


No. 


D40D14 


TO 202 
(35) 




75 






1.0 


1.5 


500 














38 






100' 


90 


120 


360 


100 


2 






















































D40E1 


TO-202 
(35) 




30 




100* 


40 


10 
50 




1 A 
100 


2 
2 


1.0 


1.3 


1A 












38 


D40E5 


TO-202 
(35) 




60 




100' 


70 


10 

50 




1 A 
100 


2 
2 


1.0 


1.3 


1A 












38 


D40E7 


TO-202 
(35) 








100- 


90 


10 

50 








1.0 


1.3 


1A 














38 




80 






1 A 
100 


2 
2 














D40N1 


TO-202 
(35) 




250 




m I. a 
tu M« 


250 


30 
20 


90 


20 
4 


10 
10 




3 


75 20 








48 


D40N2 


TO-202 
(35) 




250 




10/iA 


250 


30 
60 
30 


180 


40 
20 
4 


10 
10 
10 








3 


75 20 










48 


































D40N3 


TO-202 
(351 




300 




10 W A 


300 


20 
30 
20 


90 


40 
20 
4 


10 
10 
10 




3 


75 20 








48 


D40N4 


TO-202 
(351 




300 






10|iA 


300 


30 
60 
30 


180 


40 
20 
4 


10 
10 
10 








3 


75 20 








48 


D40N5 


TO-202 
(35) 




375 




10 MA 


300 


15 
20 
15 




40 
20 
4 


10 
10 
10 




3 


75 20 








48 


D42C1 


TO-202 




30 




m 


30 


10 




1A 


1 


0.5 


1.3 


1A 


30 












37 




(36) 










25 




200 


1 




















□42C2 


TO-202 
(361 




30 




1 M A- 


30 


20 
40 


120 


1A 
200 


1 
1 


0.5 


1.3 


1A 


30 










37 


D42C3 


TO-202 
(36) 




30 




1 fiA" 


30 


20 
40 




2A 
200 


1 
1 


0.5 


1.3 


1A 


30 










37 


D42C4 


TO-202 




45 




i w a- 


45 


10 




1A 


1 


0.5 


1.3 


1A 


30 












37 


(36) 










25 




200 


1 






















D42C5 


TO-202 




45 




1 iiA- 


45 


20 




1A 


1 


0.5 


1.3 


1A 


30 












37 




(36) 












40 


120 


200 


1 






















D42C6 


TO-202 
(36) 




45 




1 iiA' 


45 


20 
40 




2A 
200 


1 
1 


0.5 


1.3 


1A 


30 










37 



TEST CONDITIONS: 

(11 l C = 300 mA, V CE - 10V, f * 15.7kHz. (2) l c = 1 A, V cc = 20V, l g 1 = l B 2 . 100mA. (31 l c - 1A, V C C ■ 20V, l B 1 « l B 2 - 50mA. (4) l C - 100 mA, V C E " 10V, f - 1kHz. (51 l c = 150mA, 
V CC . 20V, l B 1 = l B 2 " 7.5mA. (6) l c = 30 mA, V ce = 10V, f " 1kHz. (7) l c = 150mA, V EB > 2V, l B 1 - l B 2 - 15mA. (8) l C - 500 M, V CE ■ 10V, f - 1kHz. (9) l c = 2A, V cc • 40V, 
l B 1 c |g2 =, 200mA. 



SJOjSjSUBJi NdN 



NPN Transistors 



S 



MEDIUM POWER (Continued) 



Type 
No. 


Case 
Style 


V C BO 
(V) 
Min 


v CEO 
(V) 
Min 


V E BO 
(V) 
Min 


'CES' 
'CBO 
(nAI L 


(V) 


h 

Min 


Max 


@ c 
(mA) 


8 (V) 


v CE(sat) 
(VI 8. 
Max 


v BE(sat) 
(V) 
Min Max 


Ir 
ImA) 


Cob 
(pF) 
Max 


'T 
(MHz) 
Min Mi 


e 'c 

(mAI 


•off 
Ins) 
Max 


NF 
(dB) 
Max 


Test 
Condition 


Process 
No 










Max 














X 








D42C7 


TO-202 




60 




1 mA" 


60 


10 




1A 


! 


0.5 


1.3 


1A 


30 










38 




(36) 












25 




200 






















D42C8 


TO-202 
(36I 




60 




1 mA* 


60 


20 
40 


120 


1 A 
200 




0.5 


1 .3 


1 A 


30 










38 


D42C9 


TO-202 
I36) 




60 




1 juA" 


60 


20 
40 




2A 
200 




0.5 


1.3 


1A 


30 










38 


D42C10 


TO-202 
(36) 




80 




10mA- 


90 


10 
25 




1A 
200 


1 


0.5 


1.3 


1A 


100 










38 


D42C1 1 


TO-202 




80 




10mA* 


90 


20 




1A 




0.5 


1.3 


1A 


100 












38 




(36) 












40 


120 


200 
























D42C12 


TO-202 
(36) 




80 




10mA- 


90 


20 
40 


120 


2A 
200 


i 
1 


0.5 


1.3 


1A 


100 












38 




































MPSA05 


TO-92 
(72) 




60 


4 


100 


60 


50 
50 




100 
10 


i 
■ 


0.25 




100 




100 


100 








12 


MPSA06 


TO-92 
(72) 




80 


4 


100 


80 


50 
50 




100 
10 


i 


0.25 




100 




100 


100 








12 




TO-92 
(72) 


300 


300 


8 


100 


200 


40 
40 
25 




30 
10 

1 


1 
10 
10 


0.5 


0.9 


20 




50 


10 








48 


MPSA43 


TO-92 
(72) 


200 


200 


6 


100 


160 


50 
40 
25 


200 


30 
10 
1 


10 
10 
10 


0.4 


0.9 


20 


4 


50 


10 








48 
































MPS6560 


TO-92 
(72) 




25 


5 


100 


20 


50 
50 
35 


200 


500 
100 
10 




0.5 




500 


30 


60 


10 








14 






































MPS6561 


TO-92 
(72) 




20 




100 


20 


60 
50 
35 


200 


500 
100 
10 




0.5 




350 


30 














5 






60 


10 








14 


MRF8004 


TO-39 


60 


30 


3 


10 mA 


50 


10 




400 






70 










35 


NCBS14 


TO-39 


60 


40 


4 


100 


30 


60 




20 




0.15 




100 


10 


125 


20 








14 














NCBS35 


TO-39 




65 


3 


10 (iA 


40 


30 


150 


100 




0.5 




1A 


35 


120 


100 








35 


NCBV14 


TO-202 
(35) 


60 


40 














100 


125 


50 










4 


100 


30 


75 




50 




0.4 




500 








14 


NCBX14 


TO-92+ 
191) 


60 


40 


4 


100 


30 


60 




20 


1 


0.15 




100 


10 


125 


20 








14 


NSD102 


TO-202 
(35) 


60 


45 


5 


100 


60 


25 
40 
50 
40 


150 


1A 
500 
100 
10 


5 
5 
5 
5 


0.2 
0.4 


0.9 

1.2 


100 

500 


30 


60 


50 








37 



AM MEDIUM POWER (Continued) 



Typa 

No. 


Cm 

Style 


V C BO 
(V) 
Min 


v CEO 
(V) 
Min 


Vebo 

(V) 
Min 


ices* 

(nA) W 
Max 


V C B 

(V) 


n FE 
Min Max 


e 'c 

ImAI 


& (VI 


v CEIsatl 
(VI & 
Max 


v BE(sat) 
IV) 
Min Max 


• 'c 

ImA) 


Cob 
IpF) 
Max 


(MHz) 
„. B - (mAI 
Mm Max 


'off 
(ns) 
Max 


NF 
IdB) 
Max 


Test 
Conditi 


NS0103 


TO-202 
(35) 


60 


45 


5 


100 


60 


30 
50 
120 


360 


1A 
500 
100 


5 
5 
5 


0.2 
0.4 


0.9 
1.2 


100 
500 


30 


60 50 






















50 


10 


5 
















NSD104 


TO-202 
(35) 


100 


80 


7 


100 


100 


10 
50 
20 


150 


1 A 
100 
10 


5 
5 
5 


0.2 
0.5 


0.9 
1.2 


100 
500 


30 


60 50 








NSD105 


TO-202 
1351 


100 


SO 


7 


100 


100 


10 

120 

10 


360 


1 A 
100 
10 


5 
5 
5 


0.2 
0.5 


0.9 
1.2 


100 
500 


30 


60 50 








NSD106 


TO-202 
(35) 


140 


100 


7 


100 


140 


25 
50 


150 


500 
100 


5 
5 


0.2 


0.9 


100 


30 


60 50 






















20 




10 


5 


0.5 


1.2 


500 












NSD123 


TO-202 
(35) 


120 


120 


6 


50 


50 


15 
40 
35 
25 
20 


300 


300 

150 

10 

1 

1 


10 
10 
10 
10 
10 


0.4 


1 1 
i taj 


150 


10 










NSD131 


TO-202 
(35) 


250 


250 


7 


100 


150 


30 
15 
15 


90 


30 
10 
1 


10 
10 
10 


1.0 


0.85 


20 


3 










NSD132 


TO-202 
(35) 


250 


250 


7 


100 


150 


60 
30 
15 


180 


30 
10 
1 


10 
10 
10 


1.0 


0.85 


20 


3 










NSD133 


TO-202 
(35) 


300 


300 


7 


100 


150 


30 
15 
15 


90 


30 
10 
1 


10 
10 
10 


1.0 


0.85 


20 


3 










NSD134 


TO-202 
(35) 


300 


300 


7 


100 


150 


60 
30 


180 


30 
10 


10 
10 


1.0 


0.85 


20 


3 




















15 




1 


10 


















NSD135 


TO-202 


375 


375 


7 


100 


150 


30 




30 


10 


1.0 


0.85 


20 


3 












135) 








30 
15 




10 
1 


10 
10 




















NSD457 


TO-202 
(35) 
















30 




















160 


160 


5 


50 


100 


25 




10 


1.0 




30 












NSD458 


TO-202 
(35) 


250 


250 


5 


50 


200 


25 




30 


10 


1.0 




30 













TEST CONDITIONS: 

If) l C = 300 MA, V C E * 10V. f = 15.7kHz. (2) l c = 1 A, V CC - 20V, l B 1 - l B 2 - 100mA. (3) l C " 1A, V cc - 20V, l B 1 = l B 2 = 50mA. (4) l c - 100 fiA, V CE - 10V, f - 1kHz. 15) If 
V CC - 20V, l B 1 - l B 2 - 7.5mA. (6) l C - 30 nA, V CE = 10V, f = 1kHz. (7) l c ■= 150mA, V EB - 2V, l B 1 - l B 2 - 15mA. (8) l C • 500 *iA, V CE - 10V, f - 1kHz. (9) l c = 2A, V 
l B 1 = l B 2 = 200mA. 



SJOISISUI 



NPN Trai 



AM MEDIUM POWER (Continued) 



Type 


Case 


V C BO 
(V) 
Min 


VCEO 
(V) 
Min 


Vebo 

(VI 
Min 


'CES* 
'CBOg 


V C B 


h 


EE 


* ,' C »> & 
(mA) 


V C E 


VcE(sat) 
(V) & 
Max 


v BEIsat) 
<V> 
Min Max 




c ob 
(pFI 
Max 


(MHz) @ , C A , 
... (mAI 
Mm Max 


»off 
(ns) 
Max 


IMF 
(dB) 
Max 


Test 


No. 


Style 


(nA) 
Max 


(V) 


Min 


Max 


(V) 


(mA) 


Conditi 


NSD459 


TO-202 
(35) 


300 


300 


5 


50 


250 


25 




30 


10 


1.0 




30 












NSD3439 


TO-202 
(35) 




350 




20 mA 


300 


40 

30 


160 


20 
2 


10 
10 


0.5 


1.3 


50 


20 


15 10 








NSD3440 


TO-202 
(35) 




250 




500 mA 


200 


40 
30 


160 


20 
2 


10 
10 


0.5 


1.3 


50 


20 


15 10 








NSD6178 


TO-202 
(35) 




75 




500 mA 


80 


10 
40 
30 


250 


1A 
500 
50 


2 
2 
2 


0.5 


1.2 


500 


30 


50 50 








NSD6179 


TO-202 
135) 




50 




500 mA 


60 


10 
40 
30 


250 


1A 
500 
50 


2 
2 
2 


0.5 


1.2 


500 


30 


50 50 








NSDU01 


TO-202 
(35) 


40 


30 


5 


100 


30 


50 
60 
55 




1A 
100 
10 


1 
1 
1 


0.5 


1.2 


1A 


30 


50 50 








NSDU01A 


TO-202 
(35) 


50 


40 


5 


100 


40 


50 
60 
55 




1A 
100 
10 


1 

1 
1 


0.5 


1.2 


1A 


30 


50 50 








NSDU02 


TO-202 
(35) 


60 


40 


5 


100 


40 


30 
50 


300 


500 
150 


10 
10 


0.4 


1.3 


150 


20 


50 20 






















50 




10 


10 


















NSDU05 


TO-202 
(35) 


60 


60 


4 


100 


60 


20 
50 
80 




500 
250 
50 


1 
1 
1 


0.35 


250 


30 


50 


200 








NSDU06 


TO-202 
(35) 


80 


80 


4 


100 


80 


20 
50 
80 




500 
250 
50 


1 

1 
1 


0.35 


250 


30 


50 


200 








NSDU07 


TO-202 
(35) 


100 


100 


4 


100 


100 


20 
50 
80 




500 
250 
50 


1 
1 
1 


0.35 


250 


30 


50 


200 








NSDU10 


TO-202 
(351 


300 


300 


8 


200 


200 


40 
40 

25 




30 
10 
1 


10 
15 
15 


1.5 


0.8 


20 


3 


60 10 








NSE180 


TO-202 
(36) 




40 




100 


60 


12 
30 
50 


250 


1A 
500 
100 


1.5 

1 

T 


0.9 
0.3 


1.5 


1.5A 
500 




50 100 








NSE181 


TO-202 




60 






100 


80 


12 
30 
50 




1A 
500 
10 


1.5 

1 

1 


0.9 

0.3 


1.5 


1.5A 
500 




50 100 










(36) 








250 











£A MEDIUM POWER (Continued) 



Type 
no. 


Cm 
Style 


v CBO 
IV) 
Mir. 


V C EO 
(V) 
Min 


VEBO 

(V) 
Min 


'CES* 
'CBO^ 

In A . ^ 

inMi 


V C B 

(V) 


"FE 
Min Max 


■ 5? 

(mA) 


8, V « 
(V) 


VcE(Mt) 
(VI & 
Max 


v BE(sat) 
(VI 
Min Max 


(mA) 


c ob 
IpF) 
Max 


(MHz) e , c „, 


•oH 
(ml 
Max 


NF 
(dB) 
Max 


Test 
Condition 


Process 
No. 






Max 


























NSE4E7 


TO-202 
(36) 


160 


160 


5 


50 


100 


25 




30 


10 


1.0 




30 












48 


NSE458 


TO-202 
(36I 


250 


250 


5 


50 


200 


25 




30 


10 


1.0 




30 












48 


NSE459 


TO-202 
(36) 


300 


300 


5 


50 


250 


25 




30 


10 


1.0 




30 












48 




TO-92 
(72) 


40 


30 




50 


20 


150 
80 


600 


10 
2 


10 
10 


1 




100 


25 


4 


100 30 








14 


PN3667 


TO-92 


80 


40 


5 


50 


40 


40 


120 


150 




0.25 




150 


20 


60 


600 50 








14 




(72) 












40 




30 






















PN3568 


TO-92 
(72) 


80 


60 


5 


50 


40 


40 
40 


120 


150 
30 


1 


0.25 




150 


20 


60 


600 50 








12 




TO-92 
(72) 


80 


40 


5 


50 


40 


100 
100 


300 


150 
30 




0.25 




150 


20 


60 


600 50 








14 


PN7056 


TO-92 
(72) 


220 


220 


7 


100 


160 


40 
40 
20 




30 
10 
1 


20 
20 
20 


1.0 


0.85 


20 


3.5 


50 


15 








48 


SE7055 


TO-39 


220 


220 


7 


100 


150 


40 
40 

20 




30 
10 
1 


20 
20 
20 


1.0 


85 


20 


3.5 


50 


15 








48 


SE7056 


TO-39 


300 


300 


7 


100 


200 


40 
40 
20 




30 
10 
1 


20 
20 
20 


1.0 


0.85 


20 


3 


50 


15 








48 






































SV70S6 


TO-202 
(35) 


300 


300 


7 


100 


200 


40 
40 
20 




30 
10 
1 


20 
20 
20 


1.0 


0.85 


20 


3 


50 


15 








48 


TN2102 


TO-92+ 


120 


65 


7 


10 


60 


10 




1A 


10 


0.5 


1.1 


150 


15 


60 


50 








12 




(911 












25 
40 
35 

3 


120 


500 

150 

10 

0.1 

0.01 


10 
10 
10 
10 
10 



















TEST CONDITIONS: 

(1) l C = 300 mA. V CE - 10V. f - 15.7kHz. (2) l c - 1A, V CC - 20V. I B 1 = Irj2 = 100mA. (3) l C = 1A. V CC = 20V, l B 1 - l B 2 - 50mA. (4) l C - 100 /iA, V CE » 10V. f - 1kHz. (5) l C - 150mA. 
V CC b 20V, l B 1 - l B 2 - 7.5mA. (6) l c - 30 (lA. V CE = 10V, f = 1kHz. (7) l c = 150mA. V Ea = 2V. I B 1 - l B 2 = 15mA. (8) l c • 500 nA, V CE - 10V, f - 1kHz. (91 l C - 2A, V CC k 40V, 
| B 1 = | B 2 = 200mA. 



sjoisjsueji NdN 



NPN Transistors 



MEDIUM POWER (Continued) 



Type 
No. 


Case 
Style 


VcBO 
(VI 
Min 


v CEO 
(V) 
Min 


vebo ces 
, E v f 'CBO v CB 

(nAI 18 (VI 

Mm 

Max 


"FE e 'C & V C E 
Min Max (mAI (VI 


v CE(sat) VBEjsat) . 
(V) & (V) @, c, 
... ,. (mA) 
Max Mm Max 


c ob 
(pFI 
Max 


<T ic 
(MHz) @ . 
... ,, ImA) 
Mm Max 


•off 
Ins) 
Max 


NF 
(dBI 
Max 


Test 
Condition 


Process 
No. 


TN3019 


TO-92+ 
191) 


140 


80 


7 10 90 


15 1A 10 
50 500 10 
100 300 150 10 
90 10 10 
50 0.1 10 


0.2 1.1 150 

0.5 500 


12 


100 50 




4 


1 


12 


TN3020 


TO-92+ 
(91) 


140 


80 


7 10 90 


15 1A 10 
30 100 500 10 
40 120 150 10 
40 120 10 10 
30 100 0.1 10 


0.2 1.1 150 
0.5 500 


12 


80 50 








12 


TN3053 


T0-92+ 
(91) 


60 


40 


5 250 30 


50 250 150 10 
25 150 2.5 


1 .4 1 .7 1 50 


15 


100 50 








12 



TEST CONDITIONS: 

(1) l C - 300 mA. V CE = 10V, f = 15.7kHz. (2) l c = 1A, V cc = 20V, l B 1 = l g 2 = 100mA. (31 l c = 1A, V cc = 20V, l B 1 = l B ? = 50mA. (4) l C - 100 ,uA, V CE = 10V, f = 1kHz. (51 l c = 150mA, 
V CC - 20V, l B 1 = l B 2 = 7.5mA. (61 l c = 30 mA, V CE - 10V, f = 1kHz. (7) l c • 150mA, V Ea - 2V, l B 1 = l B 2 = 15mA. (8) l c = 500 mA, V CE - 10V, f = 1kHz. (9) l c - 2A, V cc = 40V, 
l B 1 = | B 2 = 200mA. 

MM POWER 



Type 
No. 


Case 
Style 


VcBO 
(V) 
Min 


VcEO 
(VI 
Min 


v EBO 

(VI 
Min 


'CEX* 
ICEB f 
ICBO 
ImAI 

Max 


» V CB 
IV) 


Min 


h FE « 
Max 


'C , 

(A) 8 


, v CE 

IV) 


v CE(sat) 
(V) & 
Max 


v BE(sat) 
(V) ( 
Min Max 


t 'c 

(A) 


Cob 
IpF) 
Max 


'T 

IMHz) g 
Min Max 


, 'c 

IA) 


Process 


2N4921 


TO-126 




40 




100 


40 


10 
20 
40 


100 


1 

0.5 
0.05 




0.6 


1.3 


1 


100 


300 


0.25 


2C 


2N4922 


TO-126 




60 




100 


60 


10 

20 


100 


1 

0.5 




0.6 


1.3 


1 


100 


300 


0.25 


2C 
















40 




0.05 


















2N4923 


TO-126 




80 




100 


80 


10 
20 
40 


100 


1 

0.5 
0.05 




0.6 


1.3 


1 


100 


300 


0.25 


2C 


2N5190 


T0126 




40 




100 


40 


10 
25 


100 


4 

1.5 


2 

2 


0.6 
1.4 




1.5 
4 




2 1 


2E 


2M5191 


TO-126 




60 




100 


60 


10 
25 


100 


4 

1.5 


2 
2 


0.6 
1.4 




1.5 
4 




2 1 


2E 



Ajk POWER (Continued) 



Type 
No. 


Caw 
Style 


v CBO 
(V) 
Min 


v CEO 
(V) 
Min 


v EBO 
(V) 
Min 


'CEX* 

'CEB* 

ICBO 

(flA) 

Max 


, V CB 
(V) 


Min 


"FE 

Max 


e ' c 

(A) 


g, v CE 

(VI 


v CE(sat) 
(VI & 
Max 


v BE(sat> 
(V) < 
Min Max 


, 'c 

(A) 


C ob 
(pF) 
Max 


»T 

(MHz) « 
Min Max 


» 'c 

(A) 


Process 


2N5192 


TO-126 




80 




100 


80 


7 

20 


80 


4 

1.5 


2 
2 


0.6 
1.4 




1.5 
4 




2 


1 


2E 


























2N5293 


Lead Bend 
+ Clip 
TO-220 




10 




500T 


50 

doom 


30 


120 


0.5 


4 


1.0 




0.5 




2 


0.2 


4E 


2N5294 


TO-220 




70 




500t 


50 

I100S2) 


30 


120 


0.5 


4 


1.0 




0.5 




2 


0.2 


4E 


2N5295 


Lead Bend 
+ Clip 
TO-220 




40 




100 


35 


30 








1.0 1 






0.2 


4E 






120 


1 


4 




2 


2N5296 


TO-220 




40 




100 


35 


30 


















0.2 


4E 






120 


1 


4 


1.0 




1 




2 


2N5297 


Lead Bend 
+ Clip 
TO-220 




60 




500t 


50 

(100S1I 


20 


80 


1.5 


4 


1.0 




1.5 




2 


0.2 


4E 


2N5298 


TO-220 




60 




500t 


50 

noon) 


20 


80 


1.5 


4 


1.0 




1.5 




2 


0.2 


4E 


2N5490 


TO-220 




40 




5 mA* 55 


5 
20 


100 


6.5 
2 


4 
4 


2 




6.5 






4E 


2N5491 


Lead Form 
+ Clip 
TO-220 




40 




5 mA' 


56 


5 

20 


100 


6.5 
2 


4 
4 


2 




6.5 






4E 


2N5492 


TO-220 




55 




1 mA' 


70 


5 
20 


100 


6.5 
2.5 


4 
4 


2 




6.2 






4E 


2N5493 


Lead Form 
+ Clip 
TO-220 




55 




1 mA" 


70 


5 
20 


100 


6.5 
2.5 


4 
4 


2 




65 






4E 


2N5494 


TO-220 




40 




1 mA' 55 


5 
20 


100 


6.5 
3 


4 
4 


2 




6.5 






4E 


2N5495 


Lead Form 
+ Clip 
TO-220 




40 




1 mA' 


55 


5 
20 


100 


6.5 
3 


4 
4 


2 




6.5 






4E 


2N5496 


TO-220 




70 




1 mA' 86 


S 

20 


100 


7 

3.5 


4 
4 


2 




7 






4E 


2N5497 


Lead Form 
+ Clip 
TO-220 




70 




1 mA' 


85 


5 

20 


100 


7 

3.5 


4 

4 


2 




7 






4E 



NPN Trans 



POWER (Continued) 





Case 


V C bo 
(V) 
Mm 


VCEO 
(V) 
Mm 


V£BO 

IV) 
Min 


'CEX* 

'CEB» V „ D 
•CBO * 

(mA) 

Max 


n FE a ' c & V CE 
Min Max (A) (V) 


VcE(sat) V BE(M „ 

(V) & (VI e 'c 
Max Min Max 


c ob 
IpH 
Max 


(MHz) © 


No. 


Stylo 


Min Max 11 


2N5655 


TO-126 




250 




10 275 


5 0.5 10 
15 0.25 10 
30 250 0.1 10 
25 0.05 10 


1.0 0.1 
2.5 0.25 
10 0.5 


25 


10 0.05 


2N5656 


TO- 126 




300 




10 350 


5 0.5 10 
15 0.25 10 

m *5rn n 1 m 
JU aOU U.l 1U 

25 0.05 10 


1.0 0.1 
2.5 0.25 

10 0.5 


25 


10 0.05 


2N5657 


TO-126 




350 




10 375 


5 0.5 10 
1 f\ n 9<i m 

1 D U .A U 1 -J 

30 250 0.1 10 
25 0.05 10 


1 .0 0.1 
2 5 25 

10 0.5 


25 


10 0.05 


2N6037 


TO-1 26 




40 




500 40 


100 4A 3 
750 1500 2A 3 
500 0.5 3 


2 4 2 
3.0 4 


200 


25 0.75 


2N6038 


TO-126 




60 




500 60 


100 4A 3 
750 1500 2 A 3 
500 0.5 3 


2.0 4.0 2 
3.0 4 


200 


25 0.75 


2N6039 


TO-126 




80 




500 80 


100 4A 3 
750 1500 2 A 3 
500 0.5 3 


2.0 4.0 2 
3.0 4 


200 


25 075 


2N6098 


Lead Bend 
+ Clip 
TO-220 




60 




2 mA' 65 


5 10 4 
20 80 4 4 


2.5 10 








TO-220 








2 tnA* 65 










2N6099 




60 




5 10 4 
20 80 4 4 


2.5 10 






2N6100 


Lead Bend 
+ Clip 
TO-220 




70 




2 mA" 75 


5 10 4 
20 80 5 4 


2.5 10 






2N6101 


TO-220 




70 




2 mA' 75 


5 10 4 
20 80 5 4 


2.5 10 






2N6102 


Lead Bend 
+ Clip 
TO-220 




40 




2 mA" 40 


5 16 4 

W- •»*"■ % **; . ♦A' 


2.5 16 






2N6103 


TO220 




40 




2 mA* 40 


5 16 4 
15 60 8 4 


2.5 16 






2N6121 


TO-220 




45 




100 45 


10 4 2 

25 100 1.5 2 


0.6 1.5 
1.4 4 




2.5 1 



JEd POWER (Continued) 



Type 


Case 


VCBO 
IV) 


v CEO 
(V) 


v EBO 

(VI 


!CEX' 

ICEB f 

'CBO 

(mA) 

Max 


e v cb 


h 


FE „ 


>C 
(A) 


& V CE 
(V) 


v CE(t»t) 
(VI & 


v BE(sat) 
(VI 


(Al 


c ob 
(pFI 


«T 
(MHz) 


(Al 


Process 


No. 


Style 


Min 


Min 


Min 


(V) 


Min 


Max 


Max 


Min Max 


Max 


Min Ma> 




2N6122 


TO-220 




60 




100 


60 


10 

25 


100 


4 

1.5 


2 
2 


0.6 
1.4 




1.5 
4 




2.5 


1 


4E 


2N6123 


TO-220 




80 




100 


80 


7 

20 


80 


4 

1.5 


2 
2 


0.6 
1.4 




1.5 
4 




2.5 


1 


4E 


2N6129 


TO-220 




40 




100 


40 


7 

20 


100 


7 

2.5 


4 
4 


1.4 




7 






4E 


2N6130 


TO-220 




60 




100 


60 


7 

20 


100 


7 

2.5 


4 
4 


1.4 




7 






4E 


2N6131 






80 




100 


80 


20 


100 


2.5 


' 

4 


2.0 




7 






4E 








30 




100* 


37.5 


5 

30 


150 


6.5 
3 


4 


1.0 
2.0 




3 

6.5 


250 


4 


0.5 


4E 




Lead Bend 
+ Clip 




30 




100* 


37.5 


5 

30 


150 


6.5 

3 


4 


1.0 
2.0 




3 

6.5 


250 


4 


0.5 


4E 




TO-220 


























2N6290 


TO-220 




50 




100' 


56 


5 


150 


6.5 


4 


1.0 




2.5 


250 


4 


0.5 


4E 
















30 


3 


4 


2.0 




6.5 








2N6291 


Lead Bend 




50 




100' 


50 


5 




6.5 


4 


1.0 




2.5 




4 


0.5 


4E 




+ Clip 
TO-220 












3 


150 


3 


4 


2.0 




6.5 


250 








2N6292 


TO-220 










75 






6.5 
2 








2 

6.5 






0.5 


4E 




70 




100* 


5 

30 


1 50 


4 
4 


1.0 
2.0 




250 


4 


2N6293 


Lead Bend 
+ Clip 
TO-220 




70 




100* 


75 


5 

30 


150 


6.5 
2 


4 
4 


1.0 
2.0 


6.5 


2 

6.5 


250 


4 


0.5 


4E 




































2N6386 


TO-220 




40 




300* 


40 


100 
1000 


20,000 


8 

3 


3 
3 


2.0 
3.0 




3 
8 


200 


20 


1 


4J 


2N6486 


TO-220 




40 




500* 


35 

(100S2) 


5 
20 


150 


15 
5 


4 


1.3 
3.5 




5 
15 








4A 














4 












2N6487 


TO-220 




60 




500* 


55 


5 




15 


4 


1.3 




5 






4A 














doon) 


20 


150 


5 


4 


3.5 




15 








2N6488 


TO-220 




80 




500* 


75 

doon) 


5 

20 


150 


15 
5 


4 
4 


1.3 
3.5 




5 
15 






4A V 


D44C1 


TO-220 




30 




10* 


40 


10 
25 




1 

0.2 


1 
1 


0.5 


1.3 


1 


100 


3 


0.02 


4F 


D44C2 


TO-220 




30 




10* 


40 


20 
40 


120 


1 

0.2 


1 
1 


0.5 


1.3 


1 


100 


3 


0.02 


4F 







































NPN Transistors 



AA POWER (Continued) 



Type 

No. 


Case 
Style 


VcBO 

(VI 
Min 


v CEO 
(VI 
Min 


v EB0 

(V) 
Min 


'CEX* 
ICEB* 
ICBO 
IliAl 


® (v? 


Mir 


"FE 

Max 


e 'c & v ce 

(Al (VI 


VCE(sat) 
(V) & 
Max 


VgElsat! 
(VI 

Min Max 


(A) 


c ob 
IpFI 
Max 


M 


f T 

(MHz) ® 
n Max 


"c 

(A) 


Process 












Max 


























D44C3 


TO-220 




30 




10' 


40 


20 
40 




2 1 

0.2 1 


0.5 


1.3 




100 


3 




0.02 


4E 


































D44C4 


TO-220 




45 




10- 


55 


10 
25 




1 1 
0.2 1 


0.5 


1.3 


— i 


100 


3 




0.02 


4F 
































D44C5 


TO-220 




45 




10' 


55 


20 
40 


120 


1 1 
0.2 1 


0.5 


1.3 




100 


3 




0.02 


4F 






























D44C6 


TO-220 




45 




10' 


55 


20 
40 




2 1 
0.2 I 


0.5 


1.3 




100 


3 




0.02 


4E 


D44C7 


TO-220 




60 




10' 


75 


10 

25 




1 1 
0.2 1 


0.5 


1.3 


i 


100 


3 




0.02 


4F 


D44C8 


TO-220 




60 






20 
40 








1.3 


i 


100 






0.02 


4F 






1U" 


/u 


120 


1 1 
0.2 1 


0.5 




3 




D44C9 


TO-220 




60 




10* 


70 


20 




2 1 


0.5 


1.3 


\ 


100 


3 




0.02 


4E 














40 




0.2 1 


















D44C10 


TO-220 




80 




10* 


90 


10 




1 1 


0.5 


1.3 


\ 


100 


3 




0.02 


4F 
















25 




0.2 1 


















044C11 


TO-220 




80 




10" 


90 


20 
40 


120 


1 1 
0.2 1 


0.5 


1.3 


\ 


100 


3 




0.02 


4E 


D44C12 


TO-220 




80 




10* 


90 


20 
40 




2 1 
0.2 1 


0.5 


1.3 




100 


3 




0.02 


4E 


D44H1 


TO-220 




30 




10 


30 


20 
35 




4 1 
2 1 


1.0 


1.5 


8 






4A 


D44H2 


TO-220 




30 




10 


30 


40 

60 




4 1 
2 1 


1.0 


1.5 


8 






4A 


□44H4 


TO-220 




45 




10 


45 


20 

35 




4 1 

2 1 


1.0 


1.5 


8 






4A 


D44H5 


TO-220 




45 




10 


45 


40 
60 




4 1 

2 1 


1.0 


1.5 


8 






4A 


D44H7 


TO-220 




60 




10 


60 


20 
35 




4 1 
2 1 


1.0 


1.5 


8 






4A 


D44H8 


TO-220 




60 




10 


60 


40 
60 




4 1 
2 1 


1.0 


1.5 


8 






4A 


D44H10 


TO-220 




80 




10 


80 


20 
35 




4 1 
2 1 


1.0 


1.5 


8 






4A 


D44H11 


TO-220 




80 




10 


80 


40 

60 




4 1 

2 1 


1.0 


1.5 


8 










4A 

















2 



POWER (Continued) 



Type 


Case 


^CBO 
(V) 


^CEO 
(VI 


V EB0 
(VI 


'CEX* 
'CEB* 
ICBO 
(|iA) 


g V CB 




"FE 




V C E 


v CE(sat) 
(VI & 


v BE(s»t) 
(V) « 


, 'c 


c 

(pF) 
Max 


«T 

(MHzl « 


, 'c 


Process 


No 


Aiyie 


Mm 


Min 


Min 


(VI 


Min 


Max 


* (A) * 


<\/i 
ivi 


Max 


Min Max 


(A) 


Min Max 


(Al 














Max 
























M JE 1 SO 


1 U-l ZD 




40 




0.1 


60 


12 




1.5 




0.3 




0.500 


JO 


50 


0.05 


37 
















30 




0.5 




0.9 


1.5 


1.5 
























50 


250 


0.1 




1.7 


2.0 


3 




50 


0.1 




MJE1 81 


TO-126 




60 




0.1 


80 


12 
30 








0.3 
0.9 






30 




0.1 


Jo 








1.5 
0.5 




1.5 


0.500 
1.5 


50 
















50 


250 


0.1 




1.7 


2.0 


3 


































MJE1 82 


TO-1 26 




80 




0.1 


100 


12 
30 




1.5 
0.6 




0.3 
0.9 


1.5 


0.500 
1.5 


30 


50 


0.05 


39 
















50 


250 


0.1 




1.7 


2.0 


3 




50 


0.1 






TO-126 




300 




1 00 


300 


30 


240 


0.05 


10 








36 


MJE341 


TO-126 




1 50 




300 


175 


20 
25 


200 


0.15 
0.05 


10 
10 


1.0 




0.05 


15 


15 


0.05 


36 
















20 




0.01 


10 


2.3 




15 










MJE344 


TO-126 




200 




100 


200 


30 


300 


0.05 


10 


1.0 




0.05 


15 


15 


0.05 


36 


MJE520 


TO-126 




30 




1 00 


30 


25 1 1 








2C 


MJE521 


TO-126 




40 








40 
















2C 








1 












MJE720 


TO-126 




40 




100* 


40 


8 

20 








0.15 
0.4 




0.15 
0.5 








37 








1 

0.5 


























40 




0.15 




1.0 


1.3 


1.5 










MJE721 


TO-126 




60 




100 # 


60 


8 




1 




0.15 




0.15 








38 
















20 




0.5 




0.4 




0.5 
























40 




0.15 




1.0 


1.3 


1.5 










MJE722 


TO-126 




80 




100* 


80 


8 
20 




1 

0.5 




0.15 
0.4 




0.15 
0.5 








39 
















40 




0.15 




1.0 


1.3 


1.5 










MJE800 


TO-126 




60 




200 


60 


750 




1.5 


3 


2.5 




1.5 






2J 


MJE801 


TO-126 




60 




200 


60 


750 




2 


3 


2.8 




2 






2J 


MJE802 


TO-126 




80 




200 


80 


750 




1.5 


3 


2.5 




1.5 






2J 


MJE803 


TO-126 




80 




200 


80 


750 




2 


3 


2.8 




2 








2J 


MJE3439 


TO-126 




350 




20 


360 


40 


160 


0.02 


10 


0.5 


1.3 


0.05 


10 


15 


0.01 


36 
















30 




0.002 


10 












MJE3440 


TO-126 




250 




20 


250 


40 

30 


160 


0.02 
0.002 


10 
10 


OS 


1.3 


0.05 


10 


15 


0.01 


36 


MRF472 


TO-126 




30 


3 


10 


50 


10 




0.4 


2 




70 




35 


NCBJ14 


TO-126 


60 


40 


4 


0.1 


30 


75 




0.05 


1 


0.4 




0.5 


10 


125 


0.05 


14 


NCBJ35 


TO-126 




65 


3 


10 


40 


30 


150 


0.1 


1 


0.5 




1 


35 


120 


0.1 


36 


NCBW35 


TO-220 




65 


3 


10 


40 


30 


150 


0.1 


1 


0.5 




1 


35 


120 


0.1 


35 



I 



sjoisisueji NdN 



NPN Tra 




POWER (Continued) 



Type 

No. 




VcBO 


VCEO 


v EBO 


ICEX' 
ICEB* 


v CB 

(V) 




»FE 

Max 


e, 'c 

(A) 


& V CE 
& (V) 


v CE(sat) v BEIsatl 




Cob 


«T 


x " 


Case 

Style 


(V) 
Min 


(VI 
Min 


(V) 
Min 


'CBO 
(uA) 
Max 


Min 


IVI & IVI 
Max Min Ma 


(A) 

< 


(pF> 
Max 


(MHz) 
Min Ma 


NSP41 


TO-220 




40 




400 


40 


15 
30 


75 


3 

0.3 


4 
4 


1.5 
1.5 


5 
5 




3 
3 


0.! 
0.! 


NSP41 A 


TO-220 




60 




400 


60 


30 




0.3 


4 








NSP41B 


TO-220 




80 




400 


80 


15 
30 


75 


3 

0.3 


4 
4 


1.5 


5 




3 


3 


NSP41C 


TO-220 




100 




400 


100 


15 
15 


75 


3 

0.3 


4 
4 


1.5 


5 




3 


0.! 


NSP205 


TO-220 




50 




100 


50 


25 


100 


2 


2 








IvorOzU 










100 


30 


25 1 1 








MSP521 


TO-220 




40 




100 


40 


40 1 1 








MSP575 


TO-220 


45 


45 




100 


45 


25 1 1 


0.6 


1 




3 


OJ 


NSP577 


TO-220 


60 


60 




100 


60 


25 1 1 


0.6 


1 




3 


0. 


NSPB79 


TO-220 


30 


80 




100 


30 


15 11 


0.8 1 




3 


0. 


NSP581 


TO-220 


100 


100 




100 


100 


15 1 1 


0.8 


1 




3 


0. 


NSP585 


TO-220 


45 


45 




100 


45 


25 
40 




2 

0.5 


2 
2 


0.8 


2 




3 


0. 


NSP587 


TO-220 


60 


60 




100 


60 


25 




2 


2 


0.8 


2 




3 


0. 










40 




0.5 


2 












NSP589 


TO-220 


80 


80 




100 


80 


15 
30 




2 

0.5 


2 
2 


0.8 


2 




3 


0. 


NSP595 


TO-220 


45 


45 




100 


45 


25 




3 


2 


1.0 


3 




3 


0. 






40 




1 


2 












NSP597 


TO-220 


60 


60 




100 


60 


25 
40 




3 
1 


2 
2 


1.0 


3 




3 


0. 


NSP599 


TO-220 


80 


80 




100* 


80 


15 
30 




3 
1 


2 
2 


1.0 


3 




3 


0. 


NSP601 


TO-220 




100 




100 


100 


15 
30 




3 
1 


2 
2 


1.0 


3 




3 





NSP695 


TO-220 




45 




200 


45 


750 




3 


3 


2.5 


3 






NSP695A 


TO-220 




45 




200 


45 


750 




4 


3 


2.8 


4 






MSP697 


TO-220 




60 




200 


60 


750 




3 


3 


2.5 


3 






NSP697A 


TO-220 




60 




200 


60 


750 




4 


3 


2.8 


4 






NSP699 


TO-220 




80 




200 


80 


750 




3 


3 


2.5 


3 






MSP699A 


TO-220 




80 




200 


80 


750 




4 


3 


2.8 


4 






NSP701 


TO-220 




100 




200 


100 


750 




3 


3 


2.5 


3 







Mm POWER (Continued) 



Typ« 
No. 


Case 
Style 


VcBO 
(VI 
Min 


^CEO 
(V) 
Min 


VgBO 
(VI 
Min 


'CEx' 

iQFjgt 

<CBO 

(mai 


V CB 
(VI 




n FE 

Max 






v CE(sat) 
(VI & 
Max 


VBEIsrtl 
(VI 

Min Max 




C OD 


f T 


Min 


(A) 


& (V) 


(Al 


(pF) 
Max 


(MHz) © 
Min Max 












Max 












NSP2020 


TO-220 




40 




400 


40 


15 
25 


125 


3 
1 


4 
4 


1.0 
1 .5 




3.5 
5 




3 0.5 


NSP2021 


TO-220 




60 




400 


60 


15 

20 


I to 


3 
1 


4 
4 


1.0 
1 .5 




3.5 
■ 




3 0.5 


NSW 100 


TO-220 




60 




200 


60 


750 




3 


3 


2.5 




3 






NSP2101 


TO-220 




60 




200 


(SO 


750 




4 


3 


2.5 




4 






NSP2102 


TO-220 




80 




200 


80 


750 




3 


3 


2.5 




3 






















NSP2103 


TO-220 




80 




200 


80 


750 




4 


3 


2.5 




4 






NSP2480 


TO-220 




40 




100 


40 


20 
40 


100 


1 .5 
1 


4 
4 


1 .4 

0.7 




4 

1.5 
















NSP2481 


TO-220 








100 


60 


20 
40 


100 


1.5 


4 
4 






4 

1 .5 








60 




1.4 
0.7 








NSP2482 


TO-220 




40 




100 


40 


20 
40 


100 


2.5 


4 
4 


1.4 
7 




4 

1 5 






























NSP2483 


TO-220 




60 




100 


60 


20 
40 


100 


2.5 
1 


4 
4 


1.4 
0.7 




4 

1.5 






NSP2520 


TO-220 




40 




200' 


40 


10 
40 


200 


1 

0.2 


4 
4 


0.7 




1 






NSP3054 


Lead Bend 
+ Clip 
TO-220 




55 




1 mA' 


90 


5 
25 


100 


3 

0.5 


4 

4 


1 .0 
6.0 




0.5 
3 






NSP3055 


TO-220 




60 




1 mA 


70 


5 
20 


70 


10 
4 


4 
4 


1.0 
8.0 




4 
10 




2 0.5 


NSP4921 


TO-220 




40 




100 


40 


10 
20 


100 


1 

0.5 




0.6 


1.3 


1 




3 0.25 
















40 




0.05 














NSP4922 


TO-220 




60 




100 


60 


10 
20 
40 


100 


1 

0.5 
0.05 




0.6 


1.3 


1 




3 0.25 


NSP4923 


TO-220 




80 




100 


80 


10 




1 




0.6 


1.3 


1 




3 0.25 














20 
40 


100 


0.5 
0.05 














NSP5190 


TO-220 




40 




100 


40 


10 

25 


100 


4 

1.5 




0.6 
1.4 




1.5 
4 






NSP5191 


TO-220 




60 




100 


60 


10 




4 




0.6 
1.4 




1.5 
4 


















25 


100 


1.5 











































NPN Transistors 



dLM POWER (Continued) 












!CEX* 

ICEB f 

'CBO 

(nA) 

Max 






















Type 
No. 


Case 
Style 


v CBO 
(VI 
Min 


VcEO 
(V) 
Min 


v EBO 
(VI 
Min 


V CB 

(VI 


Min 


hep 

Max 


It 
(Al 


Vrp 
(VI 


v CE(sat) 
(VI & 
Max 


v BE(satl 
(VI < 
Min Max 


» 'c 

IAI 


Cob 
IpFI 
Max 


'T 
(MHz) 
Min Max 


IAI 


Process 


NSP5192 


TO-220 




80 




100 


80 


7 

20 


80 


4 

1.5 


2 
2 


0.6 
1.4 




1.5 
4 






4E 


NSP5977 


TO-220 




40 




100* 


60 


7 

20 


120 


5 

2.5 


2 
2 




2.5 




200 


2 


0.5 


4A 
















40 




0.5 


2 


0.6 




2.5 








NSP5978 


TO-220 




60 




100' 


80 


7 

20 


150 


5 

2.5 


2 
2 


1,7 


2.5 


5 


200 


2 


0.5 


4A 
















40 




0.5 


2 


0.6 




2.5 










NSP5979 


TO-220 




80 




100* 


100 


7 

20 
40 


1 50 


5 

2 5 
0.5 


2 
2 

2 


1.7 
0.6 


2.5 


5 

2.5 


200 


2 


0.5 


4A 


NSP5983 


TO-220 




40 




100* 


60 


7 

20 
40 


120 


3 
4 

1 


2 
2 
2 


1.7 
0.6 


2.5 


8 
4 


250 


2 


0.5 


4A 


NSP5984 


TO-220 




60 




100* 


80 


7 

20 
40 


120 


8 
4 


2 
2 
2 


1.7 
0.6 


2.5 


8 
4 


250 


2 


0.5 


4A 


















1 












NSP5985 


TO-220 




80 




100" 


80 


7 

20 
40 




8 
4 
1 


2 
2 
2 


1.7 


2.5 


8 


250 


2 


0.5 


4A 
















120 


0.6 




4 








TIP29 


TO-220 




40 




200* 


40 


15 
40 


75 


1 

0.2 


4 
4 


0.7 1 




3 


02 


4F 


TIP29A 


TO-220 




60 




200* 


60 


15 
40 


75 


1 

0.2 


4 
4 


0.7 








3 


0.2 


4F 








1 




TIP29B 


TO-220 




80 




200* 


80 


15 


75 


1 


4 


0.7 












4F 








40 




0.2 


4 














TIP29C 


TO-220 




























4F 


































TIP31 


TO-220 








40 


10 


50 


3 


4 


1.2 




3 




3 


0.5 


4F 














25 




1 


4 
















TIP31A 


TO-220 




60 




200* 


60 


10 

25 


50 


3 
1 


4 
4 


1.2 




3 




3 


0.5 


4F 


TIP31B 


TO-220 




80 




200* 


80 


10 

25 


50 


3 
1 


4 
4 


1.2 




3 




3 


0.5 


4F 


TIP31C 


TO-220 




100 




200' 


100 


10 
25 


50 


3 
1 


4 
4 


1.2 




3 




3 


0.5 


4F 


TIP41 


TO-220 




40 




400* 


40 


15 
30 


75 


3 

0.3 


4 
4 


1.5 




6 




3 


0.5 


4A 







































3 



POWER (Continued) 



Type 


Cue 


VcBO 


^CEO 


VeBO 


>CEX* 
'CEB f 


@ V CB 

(V) 


n FE 

Min 




(A) 8 


■ V CE 
IV! 


v CEIsat) 


v BE(sat) 


ic 


C OD 


H 




Process 


No. 


Style 


(V) 
Min 


(V) 
Min 


IV) 
Min 


ICBO 

(ma) 


e 

Max 


IV) & 
Max 


(V) @ 
Min Max 


(A) 


(pF) 
Max 


(MHz) 
Min Ma 


© 1 
IA) 

x 












Max 




















TIP41A 


TO-220 




60 




400* 


60 


15 
30 


75 


3 

0.3 


4 
4 


1 .5 




6 




3 


0.5 


4A 
































TIP41B 


TO-220 




80 




400* 


80 


15 
30 


75 


3 

0.3 


4 
4 


1.5 




6 




3 


0.5 


4A 


































TIP41C 


TO-220 




100 




400* 


100 


15 
30 


75 


3 

0.3 


4 
4 


1.5 




6 




3 


0.5 


4A 
































TIP61 


TO-220 




40 




200* 


40 


15 
40 


100 


0.5 
0.05 


4 
4 


0.7 




0.5 




3 


0.05 


4F 
































TIP61A 


TO-220 




60 




200* 


60 


15 
40 


100 


0.5 
0.05 


4 
4 


0.7 




0.5 




3 


005 


4F 






























T1P61B 


TO-220 




80 




200* 80 


15 
40 


100 


0.5 
0.05 


4 
4 


0.7 




0.5 




3 


0.05 


4F 


TIP61C 


TO-220 




100 




200* 


100 


15 
40 


100 


0.5 
0.05 


4 
4 


0.7 




0.5 




3 


0.05 


4F 


TIP110 


TO-220 




60 




1 mA 60 


500 
1000 




2 
1 


4 
4 


2.5 




2 






4J 


TIP111 


TO-220 




80 




1 mA 


80 


500 
1000 




2 
1 


4 
4 


2.5 




2 








4J 
































TIP112 


TO-220 




100 




1 mA 


100 


500 
1000 




2 
1 


4 
4 


2.5 




2 






4J 


TIP120 


TO-220 




60 




200 


60 


1000 
1000 




3 

0.5 


3 
3 


2.0 
4.0 




3 
5 






4K 


TIP121 


TO-220 




80 




200 80 


1000 
1000 




3 

0.5 


3 
3 


2.0 
4.0 




3 
5 






4K 


TIP122 


TO-220 




100 




200 


100 


1000 
1000 




3 

0.5 


3 
3 


2.0 
4.0 




3 
5 






4K 


TIP130 


TO-220 




60 




200 


60 


1000 
500 


15,000 


4 
1 


4 
4 


2.0 
3.0 




4 

6 






4K 


TIP131 


TO-220 




80 




200 


80 


1000 


15,000 


4 


4 


2.0 




4 






4K 
















500 




1 


4 


3.0 




6 








TIP132 


TO-220 




100 




200 


100 


1000 
500 


15,000 


4 

1 


4 
4 


2.0 
3.0 




4 
6 






4K 



1 



sjcnsjsueji NdN 







NPN Tran 



£3 DARLINGTON 


Type 
No. 


Case 
Style 


VcBO 
(VI 
Min 


Vr-cn 
v CEO 

(V) 
Min 


Vcort 
v bbU 

(V) 
Min 


'CES* 

'CBO a V CB 
(nA) (V) 


"FE ffl 'c & V C E 
Min Max Ml (VI 


(VI & (V) a 'C 
Max Min Max ,mA ' 


r. 

(pF) 

Max 


f T 

(MHzl @ 
Mm Max 






Max 








2N5305 


TO-92 
(74) 








100 25 


2000 20,000 2 5 


1.4 200 


10 


60 2 


2N5306 


TO-92 








100 25 


7000 70,000 2 5 


1 .4 200 


10 


60 2 




(74) 


















2 N 5307 


TO-92 
(74) 








100 40 


2000 20,000 2 5 
i 


1.4 200 


10 


60 2 


2N5308 


TO-92 
(74) 








100 40 


7000 70,000 2 5 


1.4 200 


10 


60 2 


92PU45 


TO-92+ 
(91) 


50 




12 


100 30 


4000 1A 5 
15,000 500 5 
25,000 200 5 


1.5 2.0 1A 
1 .0 200 




100 200 


92PU45A 


TO-92+ 
(91) 


60 




12 


100 40 


4000 1A 5 
15,000 500 5 
25,000 200 5 


1.5 2.0 1A 
1 .0 200 




1 00 200 


D40C1 


TO -202 
(35) 




30 




500' 30 


10,000 60,000 200 5 


1.5 2.0 500 


10 




D40C2 


TO-202 
(35) 




30 




500" 30 


40,000 200 5 


1 .5 2.0 500 


10 






















D40C3 


TO-202 
(351 




30 




500' 30 


90,000 200 5 


1 .5 2.0 500 


10 




D40C4 


TO-202 
135) 




40 




500' 40 


10,000 60,000 200 5 


1 .5 2.0 500 


10 




D40C5 


TO-202 
(35) 




40 




500' 40 


40,000 200 5 


1 .5 2.0 500 


10 






















D40C7 


TO-202 
1351 




50 




500* 50 


10,000 60,000 200 5 


1 .5 2.0 500 


10 






















D40C8 


TO-202 
(351 




50 




500 * 5 


40,000 200 5 


1.5 2.0 500 


10 






















MPSA12 


TO-92 
(721 


20 






100 15 


20,000 10 5 


1.0 10 
























MPSA13 


TO-92 
(72) 


30 






100 30 
















MPSA14 


TO-92 
(72) 


30 






100 30 


20.000 100 5 1.5 100 I 
10,000 10 5 


126 10 





s 



DUAL DIFFERENTIAL AMPS 



Type 
No. 


Style 


v CBO 
(VI 


v CEO 
(VI 


v EBO 
(V) 


'CBO 
InAI C 


, V CB 
(VI 




HFE 

Max 


^ ImAl 


hfei 

H FE2 

1%) 
Max 


Vbe 1 

-Vbe 2 

IraV) 

Max 


AV EE 1 

-v E e 2 

AT 


C b 
(pF) 


't 
(MHz) 


NF 
(dBI 


Condition 


No. 




Min 


Min 


Min 


Max 




(MV/X) 
Max 


Max 


Min Max 


Max 


2N24S3 


TO-78 


60 


30 


7 


5 


60 


150 


600 


1 


10 


5 


10 


8 


60 


7 


1 


07 














80 




0.01 




3 














2N2453A 


TO-78 


80 


50 


7 


5 


60 


150 
80 


600 


1 

0.01 


10 


5 
3 


5 


4 


60 


4 


1 


07 


2N2639 


TO-78 


45 


45 


5 


10 


45 


65 
55 
50 


300 


1 

0.1 
0.01 


10 


5 


10 


8 


80 


4 


2 


07 


2N2640 


TO-78 


45 


45 


5 


10 


45 


65 
55 
50 


300 


1 

0.1 
0.01 


20 


10 


20 


8 


80 


4 


2 


07 


2N2641 


TO-78 


45 


45 


5 


10 


45 


65 
55 
50 


300 


1 

0.1 
0.01 








8 


80 


4 


2 


07 


2N2642 


TO-78 


45 


45 


5 


10 


45 


130 
110 
100 


300 


1 

0.1 
0.01 


10 


5 


10 


8 


80 


4 


2 


07 


2N2643 


TO-78 


45 


45 


5 


10 


45 


130 
110 
100 


300 


1 

0.1 
0.01 


20 


10 


20 


8 


80 


4 


2 


07 


2N2644 


TO-78 


45 


45 


5 


10 


45 


130 
110 
100 


300 


1 

0.1 
0.01 








8 


80 


4 


2 


07 


2N2722 


TO-78 


45 


45 


5 


1 


30 


120 
100 
50 


250 


0.1 

0.01 

0.001 


10 


5 


20 


6 


100 


4 


2 


07 


2N2903 


TO-78 


60 


30 


7 


10 


50 


125 
60 


625 


1 

0.1 


20 


10 


20 


8 


60 


7 


1 


07 


2N2903A 


TO-78 


60 


30 


7 


10 


50 


125 


625 


1 


10 


5 


10 


8 


60 


7 


1 


07 














60 




0.01 


















2N2913 


TO-78 


45 


45 


6 


10 


45 


150 
100 




1 

0.1 








6 


60 


4 


1 


07 














60 


240 


0.01 


















2N2914 


TO-78 


45 


45 


6 


10 


45 


300 
225 
150 


600 


1 

0.1 
0.01 








6 


60 


3 


1 


07 



TEST CONDITIONS: 

(1) l C « 10M, V CE =5V,f = 1kHz. (2) l C » 10 nA, 



V CE = 5V,f= 15.7kHz. (31 l c = 100 mA, V ce = 5V, f = 1kHz. 



sjojsisueji NdN 







NPN Transistors 



23 



DUAL DIFFERENTIAL AMPS (Continued) 





















Vbe 1 
-v be 2 

Max 


AV EE ' 
-V EE 2 
AT 

(mV/H 












Type 
No. 


Case 
Style 


V C BO 
(V) 
Min 


VcEO 
(V) 
Min 


VgBO 
IV) 
Min 


'CBO 

(nAI © 
Max 


V CB 

IV 1 
IVI 


HFE 
Min Max 


(mAI 


HFE1 
HFE2 

1%) 


C b 
IpF) 
Max 


Mi 


*t 
(MHz) 
n Max 


IMF 
(dB) 
Max 


Test 
Condition 


Process 






















Max 


Max 














2N2915 


TO-78 


45 


45 


6 


10 


45 


150 
100 




1 

0.1 


10 


5 
3 


10 


6 


60 




4 


1 


07 
















60 


240 


0.01 




5 














2N2915A 


TO-78 


45 


45 


6 


10 


45 


150 




1 


10 


2 


5 


6 


60 


160 


4 


; 1 


07 
















100 
60 


240 


0.1 
0.01 




1.5 
2 
















2N2916 


TO-78 


45 


45 


6 


10 


45 


300 
225 
1 50 


600 


1 

0.1 
0.01 


10 


3 


10 


6 


60 




3 


1 - 1 

- 


07 


2N2916A 


TO-78 


45 


45 


6 


10 


45 


300 
225 
150 


600 


1 

0.1 
0.01 


10 


2 

1.5 
2 


5 


6 


60 


160 


3 




07 


2N2917 


TO-78 


45 


45 


6 


10 


45 


150 
100 
60 


240 


1 

0.1 
0.01 


20 


10 

5 

10 


20 


6 


60 




4 




07 


2N2918 


TO-78 


45 


45 


6 


10 


45 


300 
225 




1 

0.1 


20 


10 

5 


20 


6 


60 




3 




07 
















150 


600 


0.01 




10 
















2N2919 


TO-78 


60 


60 


6 


2 


45 


150 
100 
60 


240 


1 

0.1 
0.01 


10 


5 
3 
5 


10 


6 


60 




4 




07 


2N2919A 


TO-78 


60 


60 


6 


2 


46 


150 
100 
60 


240 


1 

0.1 
0.01 


10 


2 

1.5 

2 ' 


5 


6 


60 


160 


4 




07 


2N2920 


TO-78 


60 


60 


6 


2 


45 


300 
225 
150 


600 


1 

0.1 
0.01 


10 


5 
3 
5 


10 


6 


60 




3 




07 


2N2920 


TO-78 


70 


60 


6 


2 


45 


300 




1 


10 


5 


10 


5 


60 


400 


3 




07 
















235 




0.1 




3 






























176 


600 


0.01 




5 
















2N2920A 


TO-78 


60 


60 


6 


2 


45 


300 




1 


10 


2 


5 


6 


60 


160 


3 




07 
















225 
150 


600 


0.1 
0.01 




1.5 
2 
















2N2972 


TO-71 


45 


45 


6 


10 


45 


150 
100 
60 


240 


1 

0.1 
0.01 








6 


60 




4 




07 


2N2973 


TO-71 


45 


45 


6 


10 


45 


300 
225 
150 


600 


1 

0.1 
0.01 








6 


60 




3 




07 



Am DUAL DIFFERENTIAL AMPS (Continued) 



Type 
No. 


Case 
Style 


v CBO 
(V) 
Min 


VcEO 
(V) 
Min 


v EBO 
(V) 
Min 


'CBO v 
(nA, • CB 
Max 


Min Max ImA) 


hfei 

HFE2 

1%) 

Max 


Vbe 1 
-v BE 2 

(mVI 
Max 


AV EE 1 
-V EE 2 

AT 
(|iV/£l 
Max 


Cob 
(pF) 
Max 


«t 
(MHz) 
Min Max 


NF 
IdB) 
Max 


Test 
Condition 


Process 
No. 


2N2974 


TO-71 


45 


45 


6 


10 45 


150 1 
100 0.1 
60 240 0.01 


10 


5 

3 
5 


10 


6 


60 


4 




07 


2N2975 


TO-71 


45 


45 


6 


10 45 


300 1 
225 0.1 
120 600 0.01 


10 


5 
3 
5 


10 


6 


60 


3 




07 


2N2976 


TO-71 


45 


45 


6 


10 45 


150 1 
100 0.1 
60 240 0.01 


20 


10 

5 

10 


20 


6 


60 


4 





07 


2N2977 


TO-71 


45 


45 


6 


10 45 


300 1 
225 0.1 
120 600 0.01 


20 


10 

5 

10 


20 


6 


60 


3 




07 


2N2978 


TO-71 


60 


60 


6 


2 45 


150 1 
100 0.1 
60 240 0.01 


10 


5 
3 
5 


10 


6 


60 


4 




07 


2N2979 


TO-71 


60 


60 


6 


2 45 


300 1 
225 0.1 
120 600 0.01 


10 


5 
3 
5 


10 


6 


60 


3 




07 


2N3587 


TO-78 


60 


45 


6 


10 40 


80 500 1 

50 0.1 


10 


20 


20 


8 


80 200 


10 


3 


07 


2N3580 


TO-78 


60 


50 


6 


10 45 


300 1 
225 0.1 
150 600 0.01 
80 0.001 


10 


3 


5 


6 


60 240 


3 


2 


07 


2N3907 


TO-78 


60 


45 


6 


10 45 


120 1 
70 500 0.1 
60 300 0.01 


10 


2.5 

1 

2 


5 


6 


60 240 


4 


1 


07 


2N3908 


TO-78 


60 


60 


6 


2 45 


200 1 
125 300 0.1 
100 500 0.01 
40 0.001 


10 


2.5 
1 


5 


6 


60 240 


3 


1 


07 



TEST CONDITIONS: 

(II l C = 10mA, V CE = 5V,f = 1kHz. (21 l c =10(iA,V CE = 5V,f = 15.7kHz. (3) l c = 100/iA, V CE * 5V, f = 1kHz. 



sjojsisueji NdN 



PNP Transistors 



Mm SATURATED SWITCHES 



Type No. 


Case 
Style 


VcBO 
(V) 
Min 


VcEO 
(VI 
Min 


VebO 
(VI 
Min 


'CES" 
'CBO • 
(nA) 
Max 


VCB 
(V) 


h FE e 
Min Max 


' c 8 
(mA) 


VCE 
(V) 


VcE(SAT) 
(VI 
Max 


VbE(SAT) 
(V) 

Min Max 


ImA) 


Cob 
(pFl 
Max 


«T 

(MHz) « 
Min Max 


. 'c 

(mA) 


<off 
(nsl 
Max 


NF 
IdB) 
Max 


Test 
Condition 


Process 
No. 


2N869 


TO-52 


25 




5 


10 


15 


20 


120 


10 


5 


1.0 


1.0 


10 


9 


100 


10 








64 


2N869A 


TO-52 


25 


18 


5 


10 


15 


25 
40 
30 
40 


120 
120 


100 
30 
10 
10 


1 

0.5 
0.3 
5 


0.15 
0.2 


0.78 0.98 
0.85 1.2 


10 
30 


6 


400 


10 


80 




1 


64 


2N995 


TO-52 


20 


15 


4 


5 


15 


35 


140 


20 


1 


0.2 


95 


20 


10 


100 


10 








64 


2N995A 


TO-52 


20 


15 


4 


5 


15 


25 
25 
25 
35 


140 


100 
50 
20 
1 


1 
1 
1 
1 


0.2 
0.5 


0.95 

1.7 


20 
100 


6 


100 


10 


90 




2 


64 


2N2894 


TO-52 


12 


12 


4 


10- 


6 


25 
40 
30 


150 


100 

30 

10 


1 

0.5 
0.3 


0.15 

0.2 

0.5 


0.78 0.98 
0.85 1 .2 
1.7 


10 
30 
100 


6 


400 


30 


90 




2 


64 


2N2894A 


TO-52 


12 


12 


4.5 


50* 


10 


30 
40 
30 
20 


120 


100 
30 
10 
1 


1 

0.5 
0.3 

0.5 


0.13 
0.19 
0.45 


0.78 0.92 
0.85 1.15 
1 1.5 


10 
30 
100 


4.5 


800 


30 


25 




3 


64 


2N3012 


TO-52 


12 


12 


4 


80" 


6 


20 
30 
25 


120 


100 

30 

10 


1 

0.5 
0.3 


0.15 

0.2 

0.5 


0.78 0.98 
0.85 1.2 
1.7 


10 
30 
100 


6 


400 


30 


75 




2 


64 


2N3209 


TO-52 


20 


20 


4 


80* 


10 


15 
30 
20 


120 


100 

30 

10 


1 

0.5 
3 


0.15 

0.2 
0.6 


0.78 0.98 
0.85 1 .2 
1.7 


10 
30 
100 


5 


400 


30 


90 




2 


64 


2N3244 


TO-39 


40 


40 


5 


50 


30 


25 
50 
60 


150 


750 
500 
150 


5 
1 
T 


0.3 
0.5 


1.1 

0.75 1 .5 


150 
500 


25 


175 


50 


185 




4 


70 


2N3245 


TO-39 


50 


50 


5 


50 


50 


20 
30 
35 


90 


1 A 
500 
150 


5 
1 
1 


0.35 

0.6 

1.2 


1.1 

0.75 1.5 
2 


150 
500 
1A 


25 


150 


50 


165 




4 


70 


2N3248 


TO-52 


15 


12 


5 






25 
35 
50 
50 
50 


150 


100 
50 
10 
1 

0.1 


1 
1 
1 
1 
1 


0.125 

0.25 

0.4 


0.6 0.9 
0.7 1.1 
1.3 


10 
50 
100 


8 


250 


20 


100 




5 


64 


2N3249 


TO-52 


15 


12 


5 






35 

75 

100 

100 

100 


300 


100 
50 
10 
1 

0.1 


1 
1 
1 
1 
1 


0.125 

0.25 

0.45 


0.6 0.9 
0.7 1.1 
1.3 


10 
50 
100 


8 


300 


20 


100 




5 


64 



AM SATURATED SWITCHES (Continued) 



Type No. 


Case 
Style 


v CBO 
(V) 
Min 


v CEO 
(V) 
Min 


v EBO 
(V) 
Min 


'CES* 
'CBO e 
InA) 
Max 


V C B 

(VI 


Min 


"EE a 
Max 


'c & 

(mA) 


V C E 
(V) 


VCE(SAT) 
(VI 
Max 


VBE(SAT) 
IV) 

Min Max 


(mA) 


Cob 
(pF) 
Max 


»T 

(MHz) @ 
Min Max 


ic 

mA) 


«off 
(ns) 
Max 


NF 

(dB) 
Max 


Test 
Condition 


Process 
No. 


2N3304 


TO-52 


6 


6 


4 


10' 


3 


20 
30 
15 


120 


50 
10 
1 


1 

0.3 
0.5 


0.15 
0.16 
0.5 


0.7 
0.8 


0.8 
1 

1.5 


1 

10 
50 


3.5 


500 


10 


60 




7 


65 


2N3451 


TO-52 


6 


6 


4 


10" 


3 


20 
30 


120 


50 
10 


1 

0.3 


0.16 
0.5 


0.8 


1.0 
1.5 


10 
50 


5.5 


500 


10 


60 




7 


65 
































25 


175 


50 


90 






70 


2N3467 


TO-39 


40 


40 


5 


100 


30 


40 
40 
40 


120 


1 

500 
150 


5 
1 
1 


0.3 
0.5 


0.8 


1.0 
1.2 


150 
500 




4 


2 N 3468 


TO-39 


50 


50 


5 


100 


30 


20 
25 
25 


75 


1 

500 
150 


5 
1 
1 


0.35 
0.6 


0.8 


1.0 
1.2 


150 
500 


25 


150 


50 


90 




4 


70 




























250 


10 


90 




8 


64 


2N3545 


TO-52 


20 


20 


5 


10 


10 


30 
35 
40 
30 


120 


100 
50 
10 
1 


1 
1 
1 
1 


0.2 
0.3 
0.5 


0.6 


085 

1.1 

1.3 


10 
50 
100 


8 




2N3546 


TO-52 


15 


12 


4.5 


10 


10 


15 
25 
30 
20 


120 


100 
50 
10 
1 


1 

1 
1 


0.15 
0.25 
0.5 


0.7 
0.8 


0.9 
1.3 
1.6 


10 
50 
100 


6 


700 


10 


30 




9 


64 


2N3576 


TO-52 


20 


15 


5 


10 


15 


10 
40 


120 


100 
10 


1 

0.5 


0.15 
0.5 


0.75 


0.95 
1.1 


10 
100 


4.5 


400 


10 


50 




5 


64 


2N3639 


TO-92 
172) 


Same as PN3639, s 


ee page 2-5 for explanation 




























65 


2N3640 


TO-92 
(72) 


Same as 


PN3640, see page 2-5 for explanation 




























65 


2N4208 


TO-52 


12 


12 


4.5 


10' 


6 


30 




50 


1 


0.13 




0.8 


1 


3 


700 


10 


20 




5 


65 
















30 
15 


120 


10 
1 


0.3 
0.5 


0.15 
0.5 


0.8 


0.95 
1.5 


10 
50 
















2N4209 


TO-52 


15 


15 


4.5 


10" 


8 


40 




50 


1 


0.15 




0.8 


1 


3 


850 


10 


20 




5 


65 
















50 
35 


120 


10 
1 


0.3 
0.5 


0.18 
0.6 


0.8 


0.95 
1.5 


10 

50 
















2N4258 


TO-92 


Same as PN4258, see page 2-5 for explanation 




























66 




(721 








































2N4258A 


TO-92 
(72) 


Same as 


PN4258A, see page 2-5 for explanation 




























65 



TEST CONDITIONS: 

(1) l C = 30mA, V CC = 3V, l B 1 = 3mA, l B 2 = 1.5mA. (2) l c =30mA, V cc = 3V, l B 1 - l B 2 - 1.5mA, (3) l C " 30mA, V CC = 3V, l B 1 = l B 2 - 3mA. (4) Ic = 500mA, V cc = 30V, l B ' - l B 2 - 50mA. 
(5) l c = 10mA, V CC ■ 3V, Ig1 = Ig2 = 1mA. (6) l c = 10mA. V cc - 1.5V, l B 1 = l B 2 = 1mA. (7) l c • 10mA, V cc ■ 1.5V, l B 1 - l B 2 = 500 mA. (8) l c - 10mA, V cc - 2V, l B ' = l B 2 > 1mA. (9) l c - 50mA, 
VCC " 3V, Ib 1 " IB 2 " 5mA. (101 l c = 1 A, V cc - 30V, l B 1 = l B 2 - 100mA. 



sjois|Subji dNd 



PNP Transistors 



JLM SATURATED SWITCHES (Continued) 







VcBO 
(V) 
Min 


VcEO 
(V) 
Min 


Vebo 

(VI 
Min 


'CES* 
'CBO 8 
(nA) 












^CE(SAT) 
(VI 
Max 




















Type No. 


Case 
Style 


VCB 
(V) 


Min 


"EE « 
Max 


ImA) 


V C E 
(VI 


VBEISATI 
(VI 

Min Max 


a 'C 
(mAI 


C K 

(pF) 
Max 


*T 

(MHz) C 
Min Max 


a 'c 

(mAI 


*off 
(ml 
Max 


NF 
IdBI 
Max 


Test 
Condition 


Process 
No. 










Max 


























2N5022 


TO-39 


50 


50 


5 


100' 


30 


25 




1A 


5 


0.2 


0.8 


1.0 


100 


25 


170 


50 


90 




4 


70 














25 
15 


100 


500 
100 


1 
1 


0.4 
0.8 


1.4 
1.75 


500 
1A 
















2N5023 


TO-39 


30 


30 


5 


100* 


20 


40 




1A 


5 


0.17 


0.8 


1.0 


100 


25 


200 


50 


90 




4 


70 
















40 
30 


100 


500 
100 


1 
1 


0.35 
0.7 


1.4 
1.75 


500 
1A 
















2NSOB6 


TO 52 


15 


15 


4.5 


so- 


10 


20 




100 


1 


0.13 


0.72 


0.92 


10 


4.5 


600 


30 


35 




3 


64 
















30 
20 
12 


100 


30 
10 


0.5 
0.3 
0.5 


0.19 
0.45 


0.8 
0.96 


1.15 
1.5 


30 
100 
































1 
















2N5057 


TO-52 


15 


15 


4.5 


so* 


10 


30 
40 
30 
20 


100 


100 

30 
10 
■j 


1 

0.5 
0.3 
0.5 


0.13 
0.19 
0.45 


0.72 

0.8 

0.95 


0.92 
1.15 
1.5 


10 
30 
100 


4.5 


800 


30 


35 




3 


64 




























2N5140 


TO -92 
172) 


Same as 


PN5140, 


ee page 2-5 for explanation 




























65 


2N5771 


TO-92 
(721 


15 


15 


4.5 


10 8 


40 
50 
35 


120 


50 
10 
1 


1.0 
0.3 
OS 


0.15 
0.18 
0.6 


0.8 


0.8 

0.95 

1.5 


1 

10 

50 


3 


850 


10 


20 




6 


65 


2N5910 


TO-92 
(721 


Same as PN5910, 


ee page 2-5 for explanation 




























65 


DH3467CD 


Ceramic 

DIP 

(401 


40 


40 


5 


100 


30 


40 
40 
40 


120 


1A 
500 
160 


5 


1.0 
0.5 
0.3 


0.8 


1.6 
1.2 
1.0 


1A 

500 
150 


25 


175 


50 


90 




4 


70 




DH3467CN 


Molded 

DIP 

(39) 


40 


40 


5 


100 


30 


40 
40 
40 


120 


1A 
500 
160 




1.0 
0.5 
0.3 


0.8 


1.6 
1.2 
1.0 


1A 
500 
150 


25 


175 


50 


90 




4 


70 


DH3468CD 


Ceramic 

DIP 

(40) 


50 


50 


5 


100 


30 


20 
25 
25 


75 


1A 
500 
150 




1.2 
0.6 
0.36 


0.8 


1.6 
1.2 
1.0 


1A 
500 
150 


25 


150 


50 


90 




4 


70 


DH3468CN 


Molded 

DIP 

139) 


50 


50 


5 


100 


30 


20 
25 
25 


75 


1A 
500 
150 




1.2 
0.6 
0.35 


0.8 


1.6 
1.2 
1.0 


1A 
500 
150 


25 


150 


50 


90 




4 


70 


MPS3639 


TO-92 
(72) 


Same as 


PN3639, see page 2-5 for explanation 




























66 


MPS3640 


TO-92 
(72) 


Same as PN3640, see page 2-5 for explanation 






























65 



mm SATURATED SWITCHES (Continued) 



Type No. 


Case 
Style 


VcBO 
(V) 
Min 


VcEO 
(V) 
Min 


v EBO 
(V) 
Min 


'CES* 
'CBO a 
(nAI 
Max 


V C B 
IV) 


Min 


n FE a 
Max 


'« & 
\mM 


VCE 
(VI 


V CE(SAT) 
(V) 
Max 


V BE(SAT) 
(V) 

Min Max 


(mAI 


Cob 
(pF) 
Max 


f T 
(MHzl 
Min Max 


I 'c 

" ImAI 


<x>H 
Ins) 
Max 


NF 
<dB) 
Max 


Ti 

Cone 


NS3762 


TO -39 


40 


40 


5 






30 
30 
35 
40 
35 


120 


1.5A 

1A 

500 

150 

10 


5 

1.5 
1 
1 
1 


0.9 
0.5 
0.22 
0.15 




1.4 
1.2 
1.0 
0.8 


1A 
500 
150 
10 


18 


180 


50 


115 




1 


NS3763 


TO-39 


60 


60 


5 






20 
20 
35 
40 
35 


80 


1 .5A 
1A 
500 
1 50 
10 


5 

1.5 

1 

^ 

1 


0.9 
0.5 
0.22 
15 




1.4 
1.2 
1.0 
0.8 


1A 
500 
150 
10 


18 


180 


50 


115 




1 


PN3639 


TO-92 
(72) 


6 


6 


4 


10" 


3 


20 
30 


120 


50 
10 


1.0 
0.3 


0.16 
0.5 


0.8 


1.0 
1.5 


10 
50 


3.5 


300 


10 


60 




7 


PN3640 


TO-92 
(72) 


12 


12 


4 


10' 


6 


20 
30 


120 


50 
10 


1.0 
0.3 


0.2 
0.6 


0.8 


1.0 
1.6 


10 
50 


3.5 


300 


10 


75 




i 


PN4258 


TO-92 
(72) 


12 


12 


4.5 


10' 


6 


30 
30 
15 


120 


50 
10 
1 


1 

3 

0.5 


0.15 

0.5 


0.7 


0.95 
1.5 


10 
50 


3 


700 


10 


20 




6 


PN4258A 


TO-92 


12 


12 


4.5 


10' 


6 


30 




50 


1 


0.15 


0.7 


0.95 


10 


3 


700 


10 


18 




6 




(72) 












30 


120 


10 
1 


3 . 




































15 




0.5 


0.5 




1.5 


50 














PN5140 


TO-92 
(72) 


5 


5 


4 


50* 


3 


20 


40 


10 


1 


0.2 
0.75 




1.2 


10 
50 


5 


400 


10 


20 




6 


PN5910 


TO-92 
(72) 


20 


20 


4.5 


10' 


10 


30 
30 
15 


120 


50 
10 
1 


1 

0.3 
0.5 


0.15 
0.5 


0.75 


0.95 
1.5 


10 
50 


3 


700 


10 


20 




6 



TEST CONDITIONS: 

(1) lc ■ 30mA, Vcc = 3V, Ifl 1 = 3mA, 1 B 2 « 1.5mA. (2) l c =30mA, V cc - 3V, l B 1 - l B 2 = 1.5mA. (3) lc = 30mA, V cc - 3V, l B 1 - l B 2 = 3mA. (4) lc = 500mA, V cc - 30V, Ip, 1 » 
(SI l c - 10mA, V cc - 3V, l B 1 = l B 2 = 1mA. (6) l C - 10mA, V cc = 1.5V, "b 1 = ' B 2 = 1mA - I 7 ' ! C " 10mA, V cc - 1.5V, l B 1 = l B 2 = 500 ^A. 18) l c = 10mA, V cc = 2V, l B 1 = l B 2 = 1mA. (9 
Vcc " 3V, l B 1 » l B 2 ' 5mA. 1101 l c = 1 A, V cc - 30V, l B 1 = l B 2 = 100mA. 



SJOJSISIJ 



PNP Traru 



Jui LOW LEVEL AMPS 



Typ. 
No. 


Case 
Style 


VCBO 

(ul 
IVI 

Min 


VCEO 
(ul 

Min 


VEBO 

(ul 
I VI 

Min 


ICBO ., 
i„ai ra V CB 
' 1 (V) 
Max 


n FE a 'C g, V CE 
Min Max (mA) (V) 


V CEISAT) "BEISATI ,_ 
(mi o (ul a C 

Max Min Max lmM ' 


Cob 
Max 


,T l C 

IMHZ) Iff . - . 

Min Max ,mAI 


NF 

(Aa\ ia ^ 
Max 


2N2604 


TO-46 


60 


45 


6 


10 45 


350 10 5 
60 0.5 5 
40 120 0.01 5 


0.5 0.7 0.9 10 


6 


30 0.5 


4 1 


2N2604 
J.JTX. JTXV 


TO-46 


80 


60 


6 


10 50 


60 350 10 5 
60 0.5 5 
40 120 0.01 5 


0.5 0.7 0.9 10 


6 


30 140 0.5 


3 1 


2N2605 


TO-46 


60 


45 


6 


10 45 


600 10 5 
150 0.5 5 
100 300 0.01 5 


0.5 0.7 0.9 10 


6 


30 0.5 


3 1 


2N2605 
J.JTX, JTXV 


TO-46 


70 


60 


6 


10 50 


600 10 5 
150 0.5 5 
100 300 0.01 5 


0.5 0.7 0.9 10 


6 


30 140 0.5 


3 1 


2N3547 


TO-18 


60 


60 


6 


25 45 


76 10 5 
100 500 1 5 
60 0.1 5 


1.0 1.0 10 


8 


45 1 


5 1 


2N3540 


TO-18 


60 


45 


6 


10 45 


600 10 5 
150 0.1 5 
100 300 0.01 5 


1.0 1.0 10 


8 


60 150 1 


4 1 


2N3649 


TO-18 


60 


60 


6 


10 45 


800 10 5 
200 1 5 
150 0.1 5 
100 500 0.01 5 


1.0 1.0 10 


8 


60 150 1 


4 1 


2N3550 


TO-18 


60 


45 


8 


1 45 


800 10 5 
300 1 5 
250 0.1 5 
200 600 0.01 5 
125 0.001 5 


0.5 0.7 0.9 5 


8 


60 150 1 


4 1 


2N3799 


TO-18 


60 


60 


5 


10 50 


300 0.1 6 
300 900 0.5 5 
300 0.1 5 
225 0.01 5 
75 0.001 5 


0.25 0.8 1 
0.2 0.7 0.1 


4 


30 0.5 


1.5 1 


2N3962 


TO-18 


60 


60 


6 


10 50 


90 50 5 
100 10 5 
100 450 1 5 
100 0.1 5 
100 300 0.01 5 
60 0.001 5 


0.25 0.9 10 
0.4 0.95 50 


6 


40 160 0.5 


3 1 



LOW LEVEL AMPS (Continued) 



Type 
No. 


Case 
Style 


VCBO 
(V) 
Min 


VCEO 
(V) 
Min 


VEBO 
(V) 
Min 


,CB0 V CB 
Max 


"FE @ 'C & V CE 
Min Max (mA) (VI 


v CEtSAT) VBE(SAT) 

(V| & (V) @ C 
Max Min Max 


C„b 
(pF) 
Max 


* T ic 
(MHz) e , ~. 
... „ (mA) 
Mm Max 


Max 


Process 
No. 


2N3963 


TO- 18 


80 


80 


6 


10 70 


90 50 5 
100 10 5 
100 450 1 5 
100 0.1 5 
100 300 0.01 5 
60 0.001 5 


0.25 0.9 10 
0.4 0.95 50 


6 


40 160 0.5 


3 1 
r 


62 


2N3964 


TO-18 


45 


45 


6 


10 40 


180 50 5 
200 10 5 
250 600 1 5 
250 1 5 
250 500 0.01 5 
180 0.001 5 


0.25 0.9 10 
0.4 0.95 50 


6 


50 160 0.5 


2 1 


62 


2N3965 


TO-18 


60 


60 


6 


10 50 


180 50 5 
200 10 5 
250 600 1 5 
250 0.1 5 
250 500 0.01 5 
180 0.001 5 


0.25 0.9 10 
0.4 0.95 50 


6 


50 160 0.5 


2 1 


62 


2N4058 


TO-92 
(74) 


30 


30 


6 


100 20 


100 400 0.1 5 


0.7 10 






5 1 


62 


2N4059 


TO-92 
(74) 


30 


30 


6 


100 20 


45 660 1 6 


0.7 10 








62 


2N4061 


TO-92 
(74) 


30 


30 


6 


100 20 


90 330 1 5 


0.7 10 








62 


2N4062 


TO-92 
(74) 


30 


30 


6 


100 20 


180 660 1 5 


07 10 








62 


2N4248 


TO-92 
(72) 


Same as PN4248, see page 2-8 for explanation 


62 


2N4249 


TO-92 
(72) 


Same as PN4249, see page 2-8 for explanation 



62 


2N4250 


TO-92 
(72) 


Same as PN4250, see page 2-8 for explanation 


62 


2N4250A 


TO-92 
(72) 


Same as PN4250A, see page 2-8 for explanation 


62 


2N4288 


TO-92 
(74) 


30 


25 


6 


50 25 


75 10 5 
150 600 1 5 
100 0.1 5 


0.35 0.8 1 


8 


40 1 




62 


2N4289 


TO-92 
(74) 


60 


45 


7 


10 45 


75 10 5 
150 600 1 5 
100 0.1 5 


0.35 0.8 1 


8 


40 1 


4 1 


62 



sjoisisueji dNd 



PNP Transistors 



SiA LOW LEVEL AMPS (Continued) 



Type 
No. 


Case 
Style 


VCBO 
(VI 
Min 


VCEO 
(VI 
Min 


VEBO 
(VI 
Min 


' CBO V CB 
(nA) S CB 

Max 


"FE e l C & V CE 
Min Max (mA) (V) 


VCEISATI VbE(SAT) 

(V) & (VI @ . C A1 
Max Min Max ,mAI 


C b 
(pF) 
Max 


,T ic 

(MHz) @ C 
Min Ma, ,mA) 


NF . 

idBie Fr6q 

Max ,kH " 


Process 
No. 


2N4964 


TO-92 
(72) 


Same as MPSA70. see below for explanation 


62 


2N4965 


TO-92 
(72) 


Same as 2N5086 , see below for explanation 


62 


2N5086 


TO-92 
(72) 


50 


50 




50 35 


150 10 5 
150 1 5 
150 500 0.1 5 


0.3 10 


4 


40 0.5 


3 1 


62 


2N5087 


TO-92 
172) 


50 


50 




50 35 


10 5 
1 5 
0.1 5 


0.3 10 


4 


40 0.5 


2 1 


62 


2N5227 


TO-92 
(72) 


30 


30 


3 


100 10 


50 700 2 10 
30 0.1 10 


0.4 1.0 10 


5 


100 10 




62 


MPSA70 


TO-92 
(72) 




40 


4 


100 30 


40 400 5 10 


0.25 10 


4 


125 5 




62 


MPS6523 


TO-92 
(72) 




25 


4 


50 20 


300 600 2 10 
150 0.1 10 


0.5 50 


4 




3 1 


62 


PN4248 


TO-92 
(72) 


40 


40 


5 


10 40 


50 0.1 5 


0.25 10 


6 






62 


PN4249 


TO-92 
(72) 


60 


60 


5 


10 40 


100 300 0.1 5 


0.25 10 


6 




3 1 


62 


PN4260 


TO-92 
(72) 


40 


40 






250 700 0.1 5 


0.25 10 


6 




2 1 


62 


PN4250A 


TO-92 
(721 


60 


60 


5 I 10 50 I 250 700 0.1 5 0.25 10 
I I I 


6 




2 1 


62 




GENERAL PURPOSE AMPS AND SWITCHES 



_ 



Type 
No. 


Case 
Style 


VcBO 
(V) 
Min 


VCEO 
(V) 
Min 


v EBO 
(V) 
Min 


<CBO 

(nA)®> 
Max 


V C B 

(VI 


h 

Min 


Max 


ImAl" 


VCE 
(VI 


V CE(SAT) 
(V) 
Max 


V BE(SAT) 
& (V) @ 
Min Max 


'c 

(mA) 


Cob 
(pF) 
Max 


*T 

(MHz) @ 
Min Max 


'c 

(mA) 


toff 
(ml 
Max 


NF 
(dB) 
Min 


Test 
Condition 


Process 
No. 


2N722 


TO-18 


50 


35 


5 


100 


30 


30 
25 


90 


150 
5 


10 
10 


1.5 


1.3 


150 


45 


60 


50 








63 


2N1132 


TO-5 


50 


35 


2 


100 


30 


30 
25 


90 


150 
5 


10 
10 


1.5 


1.3 


150 


45 


60 


50 








63 


2N2696 


TO-18 


25 


25 




25 


10 


20 
30 


130 


300 
50 


2 
1 


0.25 
1.0 


1.1 
2.0 


50 
300 


20 


100 


50 


170 




1 


63 



JuM GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


VCBO 
(V) 
Min 


VCEO 
(V) 
Mm 


V E BO 
(VI 
Min 


'CBO v 
(riA) @ K '° 
Max 


n FE o 'c ^CE 
Min Max (mA) (V) 


V CE(SAT) V BE (SAT) 

(V) & (V) @ {t ^ A) 
Max Min Max 


Cob 
(pF) 
Max 


M ,MH M 
Mm Max 


toff 
Ins) 
Max 


NF 
IdB) 
Min 


Test 
Condition 


2N2904 


TO-5 


60 


40 


5 


20 50 


20 500 10 
40 120 150 10 
35 10 10 
25 1 10 
20 0.1 10 


0.4 13 150 
1.6 2.6 500 


8 


200 50 


100 




2 


2N2904 

J.JTX, JTXV 


TO-B 


60 


40 


5 


20 50 


20 500 10 
40 120 150 10 
35 10 10 
25 1 10 
20 0.1 10 


0.4 1.3 150 
1.6 2.6 500 


8 


200 50 


175 




2 


2N2904A 


TO-5 


60 


60 


5 


10 50 


40 500 10 
40 150 10 
40 10 10 
40 120 1 10 
40 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 60 


100 




2 


2N2904A 
J.JTX, JTXV 


TO-5 


60 


60 


5 


1 1 


40 600 10 
40 150 10 
40 10 10 
4U l^U 1 1U 
40 01 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


17S 




2 


2N2905 


TO-5 


60 


40 


5 


20 50 


30 500 10 
100 300 1 50 10 
75 10 10 
50 1 10 
35 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


100 




2 


2N290S 
J.JTX, JTXV 


TO-5 


60 


40 


5 


20 50 


30 500 10 
100 300 150 10 
75 10 10 
50 1 10 
35 0.1 10 


0.4 1.3 150 
1.6 2.6 500 


8 


200 50 



200 




2 


2N2905A 


TO-5 
k 


60 


60 


5 


10 50 


50 500 10 
100 300 1 50 10 
100 10 10 
100 1 10 
75 0.1 10 


0.4 1.3 150 
1.6 2.6 500 


8 


200 50 


100 




2 



TEST CONDITIONS: 

ID Ic - 300mA. V C C - 10V. I B ' = l B 2 = 30mA. I2I l c " 150mA, V cc - 6V, l B 1 " Ib 2 = 15mA. (3) l c = 300mA, V cc = 15V, la 1 = l B 2 « 30mA. (4) l c = 300mA, V CC - 30V, l B 1 => l B 2 
15) l c = 10mA, V CC - 3V. I B 1 = l B 2 = 1mA. (6) l c = 100 fiA, V CE = 5V, f - 100Hz. (7) l c = 30 juA, V CE = 5V, f = 1kHz. (8) l C » 100 |iA. V CE = 5V, f = 1kHz. (9) l c = 250 jiA, V ( 
f - 1kHz (10) l c -10MA.VcE~BV.f -1kHz. (11) l c - 50mA, V cc • 30V, l B ' - l B 2-5mA. (12) l c - 150mA, V cc ■ 30V, l B 1 =■ l B 2 = 15mA. (13) l c = 50mA, V cc = 10V, l B ' =l B 2 = 5m/ 



sjoisjsuej 



PNP Transistors 




GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


VCBO 
IV) 
Min 


VCEO 
(VI 
Mm 


V E BO 
(VI 
Min 


'CBO v 
InA) @ CB 
Max 


"FE @ 'c j, V C E 
Min Max ImAI IV) 


V CEISATI V BE(SAT | 

(V) & (V) 9 (m C A) 
Max Min Max 


c ob 
(pF) 
Max 


* T lr 
(MHzl @ , C A , 

Min Max lmAI 


•off 
(nsl 
Max 


NF 
IdB) 
Min 


Test 
Condition 


Process 
No. 


2N2905A 
J, JTX, JTXV 


TO-5 


60 


60 


5 


10 50 


50 500 10 
100 300 150 10 
100 10 10 
100 1 10 
75 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


200 




2 


63 


2N2906 


TO- 18 


60 


40 


5 


20 50 


20 500 10 
40 120 150 10 
35 10 10 
26 1 10 
20 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


100 




2 


63 


2 N 2906 

J, JTX, JTXV 


TO-18 


60 


40 


S 


20 50 


20 500 10 
40 120 150 10 
35 10 10 
25 1 10 
20 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 



175 




2 


63 


2N2906A 


TO-18 


60 


60 


5 


10 50 


40 500 10 
40 120 150 10 
40 10 10 
40 1 10 
40 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


100 




2 


63 


2N2906A 
J, JTX, JTXV 


TO-18 


60 


60 


5 


10 50 


40 500 10 
40 120 150 10 
40 10 10 
40 1 10 
40 0.1 10 


0.4 1 .3 1 50 
1 .6 2 6 500 


8 


200 50 


175 




2 


63 


2N2907 


TO-18 


60 


40 


5 


20 50 


35 500 10 
100 300 1 50 10 
75 10 10 
50 1 10 
35 0.1 10 


0.4 1.3 150 

1 .6 2.6 500 


8 


200 50 


100 




2 


63 


2N2907 

J, JTX, JTXV 


TO-18 


60 


40 


5 


20 50 


30 500 10 
100 300 1 50 10 
75 10 10 
50 1 10 
35 0.1 10 


0.4 13 150 
1 .6 2.6 500 


8 


200 50 


200 




2 


63 


2N2907A 


TO-18 


60 


60 


5 


10 50 


50 500 10 
100 300 1 50 10 
100 10 10 
100 1 10 
75 0.1 10 


0.4 1.3 150 
1.6 2 6 500 


8 


200 50 


100 




2 


63 




s 



GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


V C BO 
IV) 
Min 


VCEO 
(VI 
Min 


VEBO 
(VI 
Min 


'CBO 
InAI <G 
Max 


V C B 
(V) 


h 

Min 


FE a 
Max 


' c & 
(mAI 


VCE 
(VI 


V CE(SATI 
(V) 
Max 


VBEISATI 
& (VI @ 
Min Max 


ic 

(mAI 


(pFI 
Max 


*T 

(MHz) @ 
Min Max 


'C 
(mAI 


•off 
Insl 
Max 


NF 
IdBI 
Min 


Test 
Condition 


Process 
No. 


2N2907A 
J.JTX.JTXV 


TO-18 


60 


60 


5 


10 


50 


50 

100 

100 

100 

75 


300 


500 
150 
10 
1 

0.1 


10 
10 
10 
10 
10 


0.4 
1.6 


1.3 
2.6 


150 
500 


8 


200 


50 


200 




2 


63 


2N3072 


TO-5 


60 


60 


4 


10* 


30 


15 
30 


130 


300 
50 


2 
1 


0.25 
1.0 


1.2 
2.0 


50 
300 


10 


130 


50 


100 




3 


63 


2N3073 


TO-18 


60 


60 


4 


to* 


30 


15 

30 


130 


300 
50 


2 
1 


0.25 
1.0 


1.2 
2.0 


50 
300 


10 


130 


50 


100 




3 


63 


2N3120 


TO-5 


45 


45 


4 


10* 


30 


15 
30 


130 


300 
50 


2 
1 


0.25 
1.0 


1.2 
2.0 


50 
500 


10 


130 


50 


100 




4 


63 


2N3121 


TO-18 


45 


45 


4 


10* 


30 


15 
30 


130 


300 
50 


2 
1 


0.25 
1 .0 


1.2 
2.0 


50 
500 


10 


130 


50 


100 




4 


63 


2N3133 


TO-5 


50 


35 


4 


50 


30 


10 
40 

25 


120 


150 
150 
1 


1 

10 
10 


0.6 


1.5 


150 


10 


200 


50 


150 




2 


63 


2N3134 


TO-5 


50 


35 


4 


50 


30 


50 

100 

50 


300 


150 
150 
1 


1 

10 
10 


0.6 


1.5 


150 


10 


200 


50 


150 




2 


63 


2N3135 


TO-18 


50 


35 


4 


50 


30 


25 
40 
10 


120 


150 
150 
1 


1 

10 
10 


0.6 


1.5 


150 


10 


200 


50 


150 




2 


63 


2N3136 


TO-18 


50 


35 


4 


50 


30 


25 

100 

50 


300 


150 
150 
1 


1 

10 
10 


0.6 


1.5 


150 


10 


200 


50 


157 




2 


63 


2N3250 


TO-18 


50 


40 


5 




15 
50 
45 
40 


150 


50 
10 
1 

0.1 


1 
1 
1 
1 


0.25 
0.5 


0.6 0.9 
1.2 


10 

50 


6 


250 


10 


225 


6 


5/6 


69 


2N3250A 


TO-18 


60 


60 


5 




IS 
50 
45 
40 


150 


50 
10 
1 

0.1 


1 

1 
1 
1 


0.25 
0.5 


0.6 0.9 
1.2 


10 

50 


6 


250 


10 


225 


6 


5/6 


69 



TEST CONDITIONS: 

(1) l C = 300mA, V CC = 10V, l B 1 = Ig2 = 30mA. (21 l c = 150mA, V cc ■= 6V, l B 1 = l B 2 - 15mA. (31 l c = 300mA, V cc - 15V, Igl = Ig2 * 30mA. (41 l c = 300mA, V cc = 30V, l B 1 = l B 2 ■= 30mA. 
(B) l C - 10mA, V CC = 3V. I B 1 = l B 2 = 1mA. (6) l c = 100 mA, V CE = 5V, f = 100Hz. (71 l c = 30 mA, V ce = 5V, f = 1kHz. (8) l c V 100 mA, V CE - 5V, f = 1kHz. (91 l c - 250 uA, V CE = 5V, 
f = 1kHz. (101 l c = 10mA, V CE =5V, f = 1kHz. (11) l c = 50mA, V cc = 30V, l B 1 - Ig2 = 5mA. (12) l c = 1 50mA, V cc - 30V, l B ' = l B 2= 15mA. (13) l c = 50mA, V CC = 10V, l B 1 » l B 2 = 5mA. 



sjoiSjSue.il dNd 



PNP Transistors 




GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


V C BO 
(V) 
Min 


v CEO 
(V) 
Min 


VEBO 
(V) 
Min 


'CBO v 

(nAIS. 

Max 


n FE a 'C & V CE 
Min Max ImA) IV) 


V CE(SATI V 8E (SAT) |„ 
(V) & (V) @ 
Max Min Max 


c ob 

IpF) 
Max 


'T , 
(MHz) @ , .. 
Mm Max 


•off 
(ns) 
Max 


NF 
IdB) 
Min 


Condition 


No 


2N3250A 


TO- 18 


60 


60 


5 




15 50 1 


0.2 0.6 0.9 10 


6 


250 10 


225 


6 


5/6 


69 


J, JTX, JTXV 












50 1 50 10 1 
45 1 1 
40 0.1 1 


0.5 1 .2 50 














2N3251 


TO-18 


50 


40 


5 




30 50 1 


0.25 0.6 0.9 10 


6 


300 20 


250 


6 


5/6 


69 












100 300 10 1 
90 1 1 
80 0.1 1 


0.5 1 .2 50 














2N3251A 


TO 18 


60 


60 


5 




30 50 1 


0.25 0.6 0.9 10 


6 


300 10 


250 


6 


5/6 


69 














100 300 10 1 
90 1 1 
80 0.1 1 


0.5 1 .2 50 














J, JTX, JTXV 


























69 


60 


60 


5 




30 50 1 
100 300 10 1 
90 1 1 
80 0.1 1 


0.25 06 0.9 10 
0.5 1.2 50 


6 


juu yuu i u 


250 


6 


5/6 




























2N3502 


TO-5 


45 


45 


5 


10 30 


50 500 10 
100 300 1 50 10 
140 10 10 


0.25 1.0 50 
0.4 1.3 150 


8 


200 50 


100 


4 


4/7 


63 














135 1 10 
120 0.1 10 
80 01 10 


1 2 300 
1 .6 2 500 














2N3503 


TO-5 


60 


60 


5 


10 50 


50 500 10 
100 300 150 10 


0.25 

1 50 


8 


200 50 


100 


4 


4/7 


63 














140 10 10 
135 1 10 


04 1.3 150 
1 2 300 


























120 0.1 10 
80 0.01 10 


1 .6 2 500 














2N3504 


TO-18 


45 


45 


5 


10 30 


50 500 10 
100 300 150 10 
140 10 10 
135 1 10 
120 0.1 10 
80 0.01 10 


025 1 50 
04 1 .3 1 50 
1.6 2 500 


8 


200 50 


100 


4 


4/7 


63 


























2N3505 


TO-18 


60 


60 


5 


10 50 


100 300 1 50 10 
115 300 50 1 
140 10 10 
135 1 10 
120 0.1 10 


0.25 1 50 


8 


200 50 


100 


4 


4/7 


63 














0.4 1.3 150 
1 2 300 
1 .6 2 500 














2N3638 


TO-92 
(72) 


Same as PN3638, see page 2-16 for explanation 


63 



GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Case 
Style 


VcBO 
IV) 
Min 


v CEO 
(V) 
Min 


v EBO 
IV) 
Min 


■CBO 
InAI « 
Max 


V C B 

IV) 


h 

Min 


Max 


(mA) 


V C E 
(V) 


V CE(SATI 
IV) 
Max 


V BE(SAT) 

& ivi e 

Min Max 


'c 

ImA) 


Cob 
IpF) 
Max 


»T 

(MHz) t 
Min Max 


■c 
mA 


'off 
(nsl 
Max 


NF 
IdBI 
Min 


Test 
Condition 


Process 
No. 


2N3638A 


TO-92 

/701 
\ 1 1\ 


Same as PN3638A, see page 2-17 for explanation 


63 


2N3644 


TO-92 
(72) 


Same as PN3644, see page 2-17 for explanation 


63 


2N3702 


TO-92 
\ Ih) 


40 


25 


5 


100 


20 


60 


300 


50 


5 


0.25 




50 


1 2 


1 00 


50 








63 


2N3703 


TO-92 


50 


30 


5 


100 


20 


30 


1 50 


50 


g 


25 




50 


1 2 


100 


50 








63 


2N3905 


TO-92 

1791 


40 


40 


5 




15 
30 
50 
40 
30 


150 


100 
50 
10 
1 

0.1 




0.25 
0.4 


0.65 0.85 
0.95 


10 
50 


4.5 


200 


10 


260 


5 


5/8 


66 


2N3906 


TO-92 
(721 


40 


40 


5 






30 
60 
100 


300 


100 

50 

10 




0.25 
0.4 


0.65 0.85 
0.95 


10 
50 


4.5 


250 


10 


300 


4 


5/8 


66 
















80 
60 




1 

0.1 
























2N4121 


TO-92 
(72) 


Same as PN41 21 , see page 2-17 for explanation 


























66 


2N4122 


TO-92 
(72) 




Same as PN4122, see page 2-17 for explanation 


























66 


2N4125 


TO-92 
(72) 


30 


30 


4 


50 


20 


25 
50 


150 


50 
2 


1 
1 


0.4 


0.95 


50 


4.5 


200 


10 




5 


8 


66 


2N4126 


TO-92 
(72) 


25 


25 


4 


50 


20 


60 
120 


360 


50 
2 


1 
1 


0.4 


0.95 


50 


4.5 


250 


10 




4 


8 


66 


2N4142 


TO-92 
172) 


Same as PN4142, s 


ee page 2-17 for explanation 






















63 


2N4143 


TO-92 
(721 


Same as PN4143, s 


ee page 2-17 for explanation 


























63 


2N4290 


TO-92 
(74) 


30 


20 


5 


500 


20 


50 
40 
20 


300 


100 
10 

0.1 


10 
10 
10 


0.4 


1.5 


100 


10 


100 


10 








63 



TEST CONDITIONS: 

(1) l C = 300mA, V CC = 10V, l B 1 - Irj2 ■ 30mA. (21 l c = 150mA, V cc - 6V, l B 1 » l B 2 <t 15mA. 13) \q - 300mA, V C C " 15V, l B 1 = l B 2 = 30mA. (4) l C = 300mA, V CC = 30V, l B 1 = l B 2 - 30mA. 
(5) l C - 10mA, V CC - 3V, l B 1 - l B 2 - 1mA. (6) l C ' 100 juA, V CE = 5V. f = 100Hz. (7) l c = 30 (lA. V CE = 5V, f = 1kHz. (8) l c - 100 /jA, V ce = 5V, f = 1kHz. (9) l C = 250 M, V CE = 5V, 
f =1kHz. (10) l C - 10 M A, V CE = 5V,f = 1kHz. (11) l c = 50mA, V cc = 30V, l B 1 = l B 2 = 5mA. (12) l c = 150mA, V cc = 30V. I B 1 = l B 2= 15mA. (13) l c - 50mA, V CC = 10V, Is 1 r l B 2 = 5mA. 



sjotsjsueji dNd 



PNP Trar 



3 



GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 

No. 


Case 
Style 


VcBO 
(VI 
Min 


VCEO 
IV) 
Min 


v EBO 
(V) 
Min 


'CBO v 
Max 


•>FE S 'C » V CE 
Min Max ImAI (V) 


VCE(SAT) VpjE(SAT) lo 
(V) & (V) @ ^ 
Max Min Max 


Cob 
(pFI 
Max 


(MHz) @ , C 
... .. (mA) 
Mm Max 


'off 
Ins) 
Max 


NF 
IdB) 
Min 


Test 
Conditio 


2N4291 


TO-92 


40 


30 


6 


200 30 


100 300 100 10 


0.4 1.5 100 


10 


100 10 










(74) 










50 10 10 
30 0.1 10 










2N4402 


TO-92 
(72) 


40 


40 


5 




20 500 2 
50 150 150 2 
50 10 1 


0.4 0.7 0.95 150 
0.75 1.3 500 


10 


150 20 


255 




4 














30 1 1 














2N4403 


TO-92 
(72) 


40 


40 


5 




20 500 2 
100 300 1 50 2 
100 10 1 


0.4 0.75 0.95 150 


10 


200 20 


255 




4 














30 1 1 
60 0.1 1 


0.75 1.3 500 












2N4916 


TO-92 
(72! 


Same as PN4916, see page 2-18 for explanation 










2N4917 


TO-92 
(72) 


Same as PN4917, see page 2-18 for explanation 


2N4971 


TO-92 
(72) 


Same as PN2906, see page 2-16 for explanation 


2N4972 


TO-92 
(72) 


Same as PN2907, see page 2-16 for explanation 


2N5138 


TO-92 


Same as PN5138, see page 2-18 for explanation 




(72) 




2N5139 


TO-92 
(72I 


Same as PN5139, see page 2-18 for explanation 


2N5142 


TO-92 
(72) 


Same as PN5142, see page 2-18 for explanation 






2N5143 


TO-92 
(72) 


Same as PN5143, see page 2-18 for explanation 


2N5221 


TO-92 
(72) 


15 


15 


3 


100 10 


30 600 50 10 
30 10 10 


0.5 1.1 150 


15 


100 20 








2N5226 


TO-92 
(72) 


25 


25 


4 


300 15 


30 600 50 10 
25 10 10 


0.8 1.0 100 


20 


50 20 








2N5356 


TO-92 
(74) 


25 


25 


4 


100 25 


40 120 50 1 


0.25 50 


8 




































2N5355 


TO-92 
(74) 


25 


25 


4 


100 25 


100 300 50 1 


0.25 50 


8 










2N5365 


TO-92 
(74) 


40 


40 


4 


100 40 


20 300 5 
40 120 50 1 
32 2 1 


0.25 1.1 50 
1.0 2.0 300 


8 











GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 


Case 


v CBO 


VCEO 


v EBO 


ICBO 


VCB 

(V) 


h 


Max 




V C E 
(VI 


V CE(SAT) 


V BEISAT> 




C b 




'c 


l off 
(nsl 
Max 


IMF 


Test 


Process 


> 'c & 


'C 


(MHz) <a 
Min Max 


(dB) 
Min 


No. 


Style 


(V) 
Min 


(V) 
Min 


(V) 
Min 


InA) @ 
Max 


Min 


(mA) 


IV) 
Max 


& (V) @ 
Min Max 


(mA) 


IpF) 
Max 


(mA) 


Condition 


No. 


2N5366 


TO-92 
(74) 


40 


40 


4 


100 


40 


40 

100 

80 


300 


300 

50 

2 


5 
1 


0.25 
1 


1.1 
2.0 


50 
300 


8 












63 


2N5400 


TO-92 
(72) 


130 


120 


5 


100 


100 


40 
40 

30 


1 80 


50 
10 

1 


5 
5 

5 


02 
0.5 


1 .0 
1.0 


10 
50 


6 


100 400 


10 




8 


9 


74 


2N5401 


TO-92 


160 


150 


5 


50 


120 


50 




50 


g 


2 


1 


10 


g 


1 nn inn 


10 




g 


g 


74 




(72! 












60 


240 


10 


5 


































50 


1 


5 


0.5 


1.0 


50 
















2N5817 


TO-92 


50 


40 


5 


100 


25 


25 




500 


2 


0.75 


1 .2 


500 


15 


100 


50 








63 




(77! 












100 


200 


2 


2 




















EN2907 


TO-92 
(72) 


Same as PN2907, see page 2-16 for explanation 


























63 










































MPSL51 


TO-92 
(72) 


100 


100 


4 


1 mA 


50 


40 


250 


50 


5 


0.25 
0.3 


1.2 
1.2 


10 
50 


8 


60 


10 








74 


MPS3638 


TO-92 


Same as 


PN3638.. 


ee page 2-16 for explanation 


























63 




(72) 








































MPS3638A 


TO-92 


Same as PN3638A, see page 2-17 for explanation 


























63 




(72) 








































MPS3644 


TO-92 


Same as 


PN3644," 


ee page 2-17 for explanation 


























63 




(72) 








































MPS3645 


TO-92 


Same as 


PN3645, . 


ee page 2-17 for explanation 


























63 




























(72) 








































MPS3702 


TO-92 
(72) 


40 


25 


5 


100 


20 


60 


300 


50 


5 


0.25 




50 


12 


100 


50 








63 


MPS3703 


TO-92 
(72) 


50 


30 


5 


100 


20 


30 


150 


50 


5 


0.25 




50 


12 


100 


50 








63 






































MPS6516 


TO-92 
(72) 


40 


40 


4 


50 


30 


30 




100 


10 


0.5 




50 


4 












66 














50 


100 


2 


10 


















MPS6517 


TO-92 


40 


40 


4 


50 


30 


60 




100 


10 


0.5 




50 


4 












66 




(72) 












90 


180 


2 


10 






















MPS6518 


TO-92 
(72) 




40 


4 


500 


30 


90 
150 


300 


100 

2 


10 
10 


0.5 




50 


4 












66 


MPS6522 


TO-92 




25 


4 


50 


20 


200 


400 


2 


10 


0.5 




50 


4 








3 


10 


66 




(72) 










100 





0.1 


10 























TEST CONDITIONS: 

(1) l c - 300mA. V CC - 10V, l B 1 = lj,2 • 30mA. (2) l C - 150mA, V C c " 6V, l B 1 = l B 2 = 15mA. (31 l C - 300mA, V cc - 15V, Ig 1 - ln.2 - 30mA. (41 l c = 300mA, V CC - 30V, l B 1 = l B 2 - 30mA. 
(5) I C = 10mA. V CC - 3V, l B 1 - l B 2 = 1mA. (6) l C = 100 nA, V CE = 5V, f = 100Hz. (7) l C - 30 pA, V CE = 5V, f = 1kHz. (8) l c - 100 mA, V CE - 5V, f - 1kHz. (9) l c - 250 mA. V CE = 5V, 
f- 1kHz. (10) l C = 10 M, V CE = 5V,f = 1kHz. (11) l C = 50mA, V cc = 30V, l B 1 =l B 2 = 5mA. (12) l C • 150mA, V cc = 30V, l B 1 = l B 2 = 15mA. (131 l c - 50mA, V CC - 10V, l B 1 » l B 2= 5mA. 



SJOlSjSUBJl dNd 



PNP Transistors 

, 



MJM GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Can 
Style 


VCBO 
(V) 
Min 


V C EO 
(V) 
Min 


v EBO 
(V) 
Min 


'CBO v 
InAI ^B 
Max 


••FE @ 'C & VCE 


V CE(SATI V BE(SATI . 
IV) & (V) 9 (m C A| 
Max Min Max 


c ob 
(pF=) 
Max 


IMHZ| @ ImAl 

■ mm ImA) 

Mm Max 


•off 
Ins) 
Max 


NF 
(dB) 
Min 


Test 
Condition 


Process 


MPS6533 


TO-92 


40 


40 


4 


50 30 


25 500 10 


0.5 1.0 100 


6 










63 




(721 










40 120 100 1 
30 10 1 














MPS6534 


TO-92 
(72) 


40 


40 


4 


50 30 


50 500 10 
90 270 100 1 


0.3 1.0 100 


6 










63 














60 10 1 
















MPS6535 


TO-92 
(72) 


30 


30 


4 


100 20 


30 100 1 


0.5 1.2 100 


6 










63 


NS3905 


TO-18 


40 


40 


5 




15 100 1 


0.25 0.65 0.85 10 


4.5 


200 10 


260 


5 


5/8 


66 














30 50 1 
50 150 10 1 
40 1 1 
30 0.1 1 


0.4 0.95 50 














NS3906 


TO-18 


40 


40 


5 




30 100 1 
60 50 1 
100 300 10 1 


0.25 0.65 0.85 10 


4.5 


250 10 


300 


4 


5/8 


66 




















80 1 1 
60 0.1 1 
















PN2906 


TO-92 
(72) 


60 


40 


5 


20 50 


90 Rnn 1 n 

Z.\J 3W I U 

40 120 150 10 




g 


200 50 






















35 10 10 
25 1 10 
20 0.1 10 


1 .6 2.6 500 








































PN2906A 


TO-92 
(72) 


60 


60 


5 


10 50 


40 500 10 
40 120 150 10 
40 10 10 
40 1 10 


0.4 1 .3 1 50 
1 .6 2.6 500 


8 


200 50 


100 




2 


63 














40 0.1 10 
















PN2907 


TO-92 
(72) 


60 


40 


5 


20 50 


30 500 10 
100 300 150 10 
75 10 10 
50 1 10 
35 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


100 




2 


63 


PN2907A 


TO-92 
(72) 


60 


60 


5 


20 50 


50 500 10 
100 300 150 10 
100 10 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


100 




2 


63 














100 1 10 
75 0.1 10 
















PN3638 


TO-92 
(72) 


25 


25 


4 


35* 15 


20 300 2 
20 50 1 
30 10 10 


0.25 1.1 50 
1.0 0.8 2.0 300 


20 


100 50 


170 




1 


63 



Mm GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Type 
No. 


Caw 
Style 


VcBO 
(V) 
Min 


V C EO 
(V) 
Min 


VebO 
(VI 
Min 


'CBO v 
InAI© ^B 
Max 


n FE « ' c ft VcE 

Min Max (mAI (VI 


V CE(SATI V BE( SATI .„ 
(V) & (VI @ , c 

Ma» Min U„ lmA ' 

Max Min Max 


c ob 
(pFI 


(MHz) & , C A . 

Min M»« ' m ' 

Min Max 


•off 
ln<) 


NF 
(dB) 


Test 
Condition 


Process 

No. 


PN3638A 


TO-92 
I72) 


25 


25 


4 


25* 15 


20 300 2 
100 50 1 
100 10 10 
80 1 10 


0.25 1.1 50 
1.0 0.8 2.0 300 


10 


150 50 


170 




1 


63 


PN3644 


TO-92 
(72) 


45 


45 


5 


35' 30 


20 300 2 
100 300 150 10 
80 240 50 1 


0,25 1.0 50 
0.4 1.3 150 


8 


200 20 


100 




4 


63 














100 10 10 
80 1 10 
40 0.1 10 


1.0 0.8 2.0 300 














PN3645 


TO-92 
(72! 


60 


60 


5 


35' 50 


20 300 2 
100 300 150 10 


0.25 1.0 50 


8 


200 20 


100 




4 


63 














80 240 50 1 
100 10 10 
80 1 10 
40 0.1 10 


0.4 1.3 150 
1.0 0.8 2.0 300 














PN4121 


TO-92 
(72) 


40 


40 


5 


25- 30 


15 50 1 
70 200 10 1 
60 1 1 
40 0.1 1 


0.13 0.75 1 
0.14 0.7 0.9 10 
0.3 1 .1 50 


4.5 


400 10 


150 


4 


11/8 


66 


PN4122 


TO-92 
(72! 


40 


40 


5 


25' 30 


30 50 1 
150 300 10 1 
150 1 1 
100 0.1 1 


0.13 0.75 1 

0.14 0.7 0.9 10 
0.3 1.1 50 


4.5 


450 10 


150 


4 


11/8 


66 


PN4142 


TO-92 


60 


40 


6 




20 500 10 
20 150 1 
40 120 150 10 
35 10 10 
25 1 10 
20 0.1 10 


0.4 13 150 
1 .6 2.6 500 


8 


200 50 


100 




12 


63 




























PN4143 


TO-92 
(72) 


60 


40 


5 




30 500 . 10 
50 150 1 
100 300 1 50 10 
75 10 10 
50 1 10 
35 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


100 




12 


63 



TEST CONDITIONS: 

(1) I C • 300mA. V CC - 10V, l B 1 = l B 2 . 30mA. (21 l c - 150mA, V cc = 6V. I B 1 - l B 2 = 15mA. (31 l c = 300mA, V cc - 15V, l B 1 - l B 2 = 30mA. (4) l c = 300mA, V cc - 30V, l B 1 • l B 2 - 30mA. 
15) l C = 10mA, V CC " 3V, l B 1 - l B 2 = 1mA. (6) l C - 100 »A, V CE = 5V. f = 100Hz. (71 l C - 30 mA, V CE = 5V, f = 1kHz. (8) l C " 100 mA, V CE = 5V, f = 1kHz. (9) l C - 250 «A, V CE = 5V. 
f = 1kHz. (TO) l C = 10/uA, V CE = 5V,f- 1kHz. (11) l c - 50mA. V CC > 30V, l B 1 - l B 2 = 5mA. (12) l c = 150mA, V cc = 30V, l B 1 = l B 2= 15mA. (13) l c = 50mA. V cc = 10V, l B 1 - l B 2 = 5mA. 



SJOlS|SUBJl dNd 



PNP Transistors 



mm GENERAL PURPOSE AMPS AND SWITCHES (Continued) 



Typ« 
No. 


Case 
Style 


V CBO 

(V) 
Min 


v CEO 
(V) 
Min 


v EBO 

(V) 
Min 


'CBO v 
Max 


hFE a 'C J V CE 
Min Max (mA) (V) 


V CE(SAT) V BE(SAT) . 
(VI & IV) © 
Max Min Max 


c ob 
(pF) 
Max 


«_ 

(MHz) <a c 
... .. (mA) 
Mm Max 


toff 
Ins) 
Max 


NF 
IdBI 
Min 


Test 
Condition 


Process 
No. 


PN4916 


TO-92 
(72I 


30 


30 


5 


25" 15 


15 200 50 1 
70 10 1 
60 1 1 
40 0.1 1 


0.13 0.75 1 
0.14 0.7 0.9 10 
0.3 0.75 1.1 50 


4.5 


400 10 


150 


4 


13/8 


66 


PN4917 


TO-92 
(72) 


30 


30 


5 


25- 15 


30 50 1 
150 300 10 1 
150 1 1 
100 0.1 1 


0.13 0.75 1 
0.14 0.7 0.9 10 
0.3 0.75 1.1 50 


4.5 


450 10 


150 


4 


13/8 


66 


PN5138 


TO-92 
(72) 


30 


30 


5 


50 20 


50 10 10 
50 1 10 
50 800 0.1 10 


0.3 1.0 10 


7 


30 0.5 








66 


PN51 39 


(72) 








50* 1 5 


ID OU U 


no n7 in in 




300 1 






1 3 


66 












40 10 1 
40 1 10 
30 0.1 10 


0.5 0.75 1.25 50 














PN5142 


TO-92 
(72) 


20 


20 


4 


50" 12 


15 300 10 
30 50 1 


0.5 1.5 50 
0.2 0.8 2.5 300 


10 


100 50 


200 




1 


63 


PN5143 


TO-92 
(72) 


20 


20 


4 


50' 12 


15 300 10 
30 50 1 


0.5 1 .5 50 
0.2 0.8 2.5 300 


10 


100 50 


200 




1 


63 


TN2905 


TO-92+ 
(91) 


60 


40 


5 


20 50 


30 500 10 
100 300 150 10 
75 10 10 
50 1 10 
35 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


100 




2 


63 


TN2905A 


TO-92+ 
(91) 


60 


60 


5 


10 50 


50 500 10 
100 300 150 10 
100 10 10 
100 1 10 
75 0.1 10 


0.4 1.3 150 
1 .6 2.6 500 


8 


200 50 


100 




2 


63 



TEST CONDITIONS: 

(1) lc = 300mA, V cc = 10V. I B 1 = l B 2 = 30mA. (2) l c = 150mA, V cc = 6V, If) 1 = l g 2 = 15mA. (3) Iq * 300mA, V cc = 15V, l B 1 = i B 2 = 30mA. (41 l c - 300mA, V cc = 30V, Ig 1 = l B J = 30mA. 
(5) l c = 10mA, V CC = 3V, Ifj1 = l B 2 = 1mA. (6) l C - 100 mA, V C E - 5V. f = 100Hz. (7) l c = 30 mA, V ce = 5V, f - 1kHz. (8) l c = 100 mA, V CE = 5V, f = 1kHz. (9) l C - 250 wA, V CE - 5V, 
f = 1kHz. (10) l C > 10 mA, V CE = 5V, f = 1kHz. (11) l c = 50mA, V CC = 30V, l B 1 . l B 2 = 5mA. (12) l c - 1 50mA, V CC = 30V, l B 1 = l B 2« 15mA. (13) l c = 50mA, V cc = 10V, l B 1 = l S 2 - 5mA. 




£2 

AM medium power 



Type 

No. 



Case 
Style 



V C BO 
(V) 
Min 



VCEO 
(V) 
Min 



VEBO 
IV) 
Min 



ICBO 

InA) ( 



V C B 

IV) 



Min Max 



In 



VCE 



ImAI™ (V) 



V CE(SAT) V BE(SAT) 



(V) 



IV) @ 
Min Max 



'C 
ImA) 



c ob 
IpF) 
Max 



»T 
(MHz) 



ImA) 



•off 
Ins) 
Max 



NF 
IdB) 
Max 



2 N 3634 



140 



140 



100 100 



25 
50 
50 
45 
40 



150 
50 
10 
1 

0.1 



10 
10 
10 
10 
10 



0.3 
0.5 



0.8 10 
0.65 0.9 50 



10 



600 



2N3634 
J. JTX 



30 
50 
50 
45 
25 



150 10 

50 10 

10 10 

1 to 

0.1 10 



0.3 
0.6 



0.8 10 
0.65 0.9 50 



150 800 30 



2N3635 



100 100 



50 

100 300 

100 

90 

80 



150 10 

50 10 

10 10 

1 10 

0.1 10 



0.3 
0.5 



0.8 10 
0.65 0.9 50 



30 



2N3635 
J. JTX 



100 100 



60 

100 300 

100 

90 

55 



150 

50 

10 

1 

0.1 



10 
10 
10 
10 
10 



0.3 
0.6 



0.8 10 
0.65 0.9 50 



200 850 30 



2N3636 



25 
50 
50 
45 
40 



150 10 

50 10 

10 10 

1 10 

0.1 10 



0.3 
0.5 



0.8 10 
0.65 0.9 50 



2N3636 
J, JTX 



100 175 



30 
50 
50 
45 
25 



150 



150 
50 
10 
1 

0.1 



10 
10 
10 
10 
10 



0.3 
0.6 



0.8 10 
0.65 0.9 50 



150 800 30 



2N3637 



100 100 



50 

100 300 

100 

90 

80 



150 10 

50 10 

10 10 

1 10 

0.1 10 



0.3 
0.5 



0.8 10 
0.65 0.9 50 



2N3637 
J, JTX 



100 175 



60 
100 

'00 300 

90 
55 



150 
50 
10 
1 

0.1 



10 
10 
10 
10 
10 



0.3 
0.6 



0.8 10 
0.65 0.9 50 



200 



850 30 



TEST CONDITIONS: 

111 lc = 50mA, V C c = 100V, l B 1 = Ip2 . 
V CC - 10V, f= 1kHz. 



5mA. (2) I C = 500 mA, V CE = 10V, f = 1kHz. (31 l C = 500mA, V cc = 30V, l B 1 = l B 2 = 50mA. Ml l C ■ 160mA, V cc - 30V, I B 1 = I B 2 = 15mA - < 5 ' 'c = 1 

sjo)s;suej. 



PNP Transistors 



Jjf MEDIUM POWER (Continued) 



Type 

No. 


Case 
Style 


v CBO 
(V) 
Min 


V C EO 
(V) 
Min 


vebo 

(VI 
Min 


', CB .?« V CB 
Max 


h 

Min 


FF „ 
re @ 

Max 


l c 
(mA) & 


V CE 
(V) 


V CE(SAT) 
(V) & 
Max 


V BE(SAT) 

(VI 9 
Min Max 


'c 

ImAI 


C Q b 
(pF) 
Max 


«T 

(MHz) (3 
Min Max 


'c 

(mAI 


«off 
(nil 
Max 


NF 
(dBI 
Max 


Test 
Condition 


Process 
No. 


2N4030 


TO-39 


60 


60 


5 


50 50 


15 




1A 


5 


1.0 




1A 


20 


100 


400 


50 


400 




3 


67 














25 
40 

30 


1 20 


500 
100 
0.1 


5 

5 

c 

O 


0.5 
0.15 


0.9 


500 
150 


















2N4031 


TO-39 


80 


80 


5 


50 60 


10 
25 




1A 
500 


5 
5 


0.5 
0.15 


0.9 


500 
150 


20 


100 


400 


50 


400 




3 


67 














40 

30 


120 


100 

0.1 


5 
5 
























2N4032 


TO-39 


60 


60 


5 


50 50 


40 
70 
100 


300 


1A 
500 
100 


5 
5 
5 


1 

0.5 
0.15 


0.9 


1A 
500 
150 


2a 


150 


500 


50 


400 




3 


67 














75 




0.1 


5 
























2N4033 


TO-39 


80 


80 


5 


50 60 


25 
70 
100 
75 


300 


1A 
500 
100 
0.1 


5 
5 
5 
6 


0.5 
0.15 


0.9 


500 
150 


20 


150 


500 


50 


400 




3 


67 


2N4036 


TO-39 


90 


65 


7 


20 60 


20 
40 
20 


140 


500 
150 
0.1 


10 
10 
10 


0.6 


1.4 


150 


30 


60 




50 


700 




4 


67 


2N4037 


TO-39 


60 


40 


7 


250 60 


5.0 
15 


250 


150 
1 


10 
10 


1.4 




150 


30 


60 




50 








67 


2N4234 


TO-39 




40 




100mA 40 


10 
20 
30 
40 


150 


1A 
500 
250 
100 


1 
1 
1 
1 


0.6 


1.5 


1A 


100 


3 




100 








67 




TO-39 




60 




100nA 60 


10 




1A 


1 


0.6 


1.5 


1A 


100 


3 




100 








67 






20 
30 
40 


150 


500 
250 
100 


1 
t 
1 










2N4236 


TO-39 




80 




100 (i A 80 


10 
20 
30 
40 


150 


1A 
500 
250 
100 


1 
1 
1 
1 


0.6 


1.5 


1A 


100 


3 




100 








67 


2N4314 


TO-39 


90 


66 




250 60 


50 
15 


250 


150 
1 


10 
10 


1.4 




150 


30 


60 




50 








67 


2N4354 


TO-92 
(72) 






































Same as PN4354, s 


ee page 2-25 for explanation 




























67 


2N435B 


TO-92 


Same as 


PN4355.S 


ee page 2-25 for explanation 






























67 




(72) 















































































s 



MEDIUM POWER (Continued) 



Type 
No. 


Case 
Style 


v CBO 
(V) 
Min 


v CEO 
(V) 
Min 


VEBO 
IV) 
Min 


'CBO v 
(nA) e « 
Max 


Min Max (mAI (V) 


V CE(SATI V BE(SAT) . 

iv) & (V) e c 

Max Min Max ' ' 


C D b 
(pFI 
Max 


(MHz) @ , \. 
Mm Max 


'off 
Ins) 
Max 


NF 
(dBI 
Max 


Test 
Condition 


Process 
No. 


2N4366 


TO-92 
(72) 


Same as PN4356 , see page 2-25 for explanation 


67 


2N6554 


TO-202 
(35) 


60 


60 


6 


100 40 


25 500 1 
60 250 1 
80 300 50 1 
60 10 1 


1.0 1A 


18 


75 250 100 








78 


0.5 250 




2N6555 


TO-202 
(35) 


80 


80 


5 


1 00 60 


25 500 1 
60 250 1 
80 300 50 1 
60 10 1 


1 .0 1 A 
0.5 250 


18 


ic led 1 nn 
/b ^bU 1 UU 








78 


2N6556 


TO-202 
(35) 


100 


100 


5 


100 80 


25 500 1 
60 250 1 
80 300 50 1 
60 10 1 


1.0 1A 
0.5 250 


18 


75 250 100 








78 


40319 


TO-39 




40 




250 15 


35 200 50 4 


1.4 150 












67 


92PE77A 


TO-92+ 
(90) 




45 




100 60 


25 500 2 
40 250 2 
40 50 2 


0.5 500 
1.0 1A 


30 


50 200 








78 


92PE77B 


TO-92+ 
(90I 




60 




100 80 


25 500 2 
40 250 2 
40 50 2 


0.5 500 
1.0 1A 


30 


50 200 








78 


92PE77C 


TO-92+ 
(90) 




80 




100 100 


25 500 2 
40 250 2 
40 50 2 


0.5 500 
1.0 1A 


30 


50 200 








78 


92PU51 


TO-92+ 
191) 




30 




100 40 


50 1A 1 
60 100 1 
55 10 1 


0.5 1A 


30 


50 50 








77 


92PU51A 


TO-92+ 
(91) 




40 




100 50 


50 1A 1 
60 100 1 
55 10 1 


0.5 1A 


30 


50 50 








77 


92PU55 


TO-92+ 
(91) 




60 




100 40 


20 500 1 
50 250 1 
80 50 1 


0.35 250 


30 


50 200 








79 


92PU56 


TO-92+ 
(91) 




80 




100 60 


20 500 1 
50 250 1 
80 50 1 


0.35 250 


30 


50 200 








79 



' CONDITIONS: 

(1) l C = 50mA, V CC i 100V. I B 1 = Iq2 = 5mA. (2) l c - 500 (iA, V CE = 10V, f = 1kHz. (31 l C = 500mA, V cc = 30V, l B 1 = l B 2 = 50mA. (4) l c = 1 50mA, V cc = 30V, l B 1 = Ig2= 15mA. (51 l c = 100mA. 
V CC = 10V,f = 1kHz. 



sjO)s;sueji <jNd 



PNP Transistors 



ro 



^3 MEDIUM POWER (Continued) 


Type 


Case 


VcBO 
(V) 


v CEO 
(V) 


v EBO 
(VI 


', CB ? v CB 

(nA) @ « 
Max 


hpp If Vr-p 
"l-fc @ ** g, ct 
Min Max (mAI (VI 


V CE(SATI V BEISAT) .„ 
(VI 8. (VI @, C A , 
Max Mm Max 


C Q b 
(pFI 


(MHz) @ , C A1 
■» (mAI 
Mm Max 


•off 
(nsl 


NF 
(dBI 


Test 
Condition 


Process 
No. 


No. 


Style 


Min 


Min 


Min 


Max 


Max 


Max 


92PU57 


TO-92+ 
(911 




100 




100 80 


20 500 1 
50 250 1 


0.35 250 


30 


50 200 








79 


92PU20O 


TO-92+ 
(91 ) 


100 


80 




100 80 


100 300 350 2 

1 fin in **) 
1UU 1U £ 


0.35 350 


20 


500 100 








79 


D41D1 


T 0-202 




30 




100* 45 


10 1A 2 
bu 1 bu 1 UU Z 


0.5 1.5 500 












78 


D41D2 


TO-202 
(35) 




30 




100* 45 


20 1A 2 

lid **»/*tn inn o 
l*U JUU TOO 2 


0.5 1.5 500 












78 


D41D4 


TO-202 
(35) 




45 




100' 60 


10 1A 2 
50 150 100 2 


0.5 1.5 500 












78 


D41D5 


TO-202 
(35) 




45 




100" 60 


20 1A 2 
120 360 100 2 


0.5 1.5 500 












78 


D41D7 


TO-202 




60 




100* 75 


10 1A 2 
oU 1 DU 1 UU I 


1.0 1.5 500 












78 


D41D8 


TO-202 
(35) 




60 




100- 75 


20 1A 2 
1 on Tfifi inn o 

1 C\i OOU lUU J 


1 .0 1 .5 500 












78 


D41D10 


TO-202 
(35) 




75 




100* 90 


10 1A 2 

tin icn ifin i 
OU 1 DU 1 uu z 


1.0 1.5 500 












78 


D41D11 


TO-202 
(35) 




75 




100* 90 


20 1A 2 


1.0 1.5 500 












78 


























041 D13 


TO-202 
(35) 




75 




100* 90 


50 150 100 2 


1 .0 1 .5 500 












78 


D41D14 


TO-202 
(35) 




75 




100* 90 


120 360 100 2 


1 .0 1 .5 500 












78 


041 E1 


TO-202 
(35) 




30 




100* 40 


10 1A 2 
50 100 2 


1.0 1.3 1A 












78 


D41E5 


TO-202 
(35) 




60 




100* 70 


10 1A 2 
50 100 2 


1.0 1.3 1A 












78 


• D41E7 


TO-202 
(35) 




80 




100* 90 


10 1A 2 
50 100 2 


1.0 1.3 1A 













78 


D43C1 


TO-202 
(36) 




30 




1 nA* 30 


10 1A 1 

25 200 1 


0.5 1.3 1A 


30 










77 


D43C2 


TO-202 
(36) 




30 




1mA* 30 


20 1A 1 
40 120 200 1 


0.5 1.3 1A 


30 










77 


D43C3 


TO-202 
(36) 




30 




1 mA* 30 


20 2A 1 
40 200 1 


0.5 1.3 1A 


30 










77 


























D43C4 


TO-202 
(36) 




45 




1 mA* 45 


10 1A 1 
25 200 1 


0.5 1.3 1A 


30 










77 



Am MEDIUM POWER (Continued) 



Type 
No. 


Case 
Style 


v CBO 
(V) 
Min 


V C EO 
(V) 
Min 


VebO 
IV) 
Min 


'CBO v 
(nA) m 
Max ' ' 


"FE e IC g,V C E 
Min Max ImA) (V) 


V CE(SAT) V BE ( SAT ) 
(V) 8. IV) 
Max Min Max 


c ob 
(pFI 
Max 


* T ic 

(MHz) & ^ j 
Min Max 


'off 
(ns) 
Max 


NF 
IdB) 
Max 


Test 
Condit ; 


D43C5 


TO-202 
(36) 




45 




1 «A* 45 


20 1A 1 
40 120 200 1 


0.5 1.3 1A 


30 










D43C6 


TO-202 
(36) 




45 




1 |iA* 45 


20 2A 1 
40 200 1 


0.5 1.3 1A 


30 










D43C7 


TO-202 
(36) 




60 




1(iA* 60 


10 1A 1 
25 200 1 


0.5 1.3 1A 


30 










D43C8 


TO-202 
(36) 




60 




1mA- 60 


20 1A 1 
40 120 200 1 


0.5 1.3 1A 


30 










D43C9 


TO-202 
(36) 




60 




1 nA' 60 


20 2A 1 
40 200 1 


0.5 1.3 1A 


30 










D43C10 


TO-202 
(36) 




80 




10mA' 90 


10 1A 1 
25 200 1 


0.5 1.3 1A 


100 










D43C11 


TO-202 
136) 




80 




10)*A- 90 


20 1A 1 
40 120 200 1 


0.5 1.3 1A 


100 










D43C12 


TO-202 
(36) 




80 




10wA- 90 


20 2A 1 
40 120 200 1 


0.5 1.3 1A 


100 










MPSA55 


TO-92 
(721 




60 


4 


100 60 


50 100 1 
50 10 1 


0.25 100 




50 100 








MPSA56 


TO-92 
(72) 




80 


4 


100 80 


50 100 1 
50 10 1 




0.25 100 




50 100 










TO-92 
(721 


Same as PN4354 , see page 2-25 for explanation 


MPS4355 


TO-92 
172) 


Same as PN4355, see page 2-25 for explanation 


MPS4356 


TO-92 
(72) 


Same as PN4356, see page 2-25 for explanation 


MPS6562 


TO-92 
1721 






5 


100 20 


50 200 500 1 
50 100 1 
35 10 1 


0.5 500 


30 


60 10 








MPS6563 


TO-92 
(72) 






5 


100 20 


50 200 350 1 
50 100 1 
35 10 1 


0.5 350 


30 


60 10 








NSD202 


TO-202 
(35) 


60 


45 


5 


100 60 


25 1A 5 
40 500 5 
50 150 100 5 
40 10 5 


0.2 0.9 100 
0.4 1.2 500 


30 


60 50 









TEST CONDITIONS: 

(1) l c = 50mA, V CC = 100V, l B 1 = l B 2 = 5mA. (2) l c = 500 (iA, VcE = 10V, f - 1kHz. (3) l c = 500mA, V cc = 30V. l B 1 = l B 2 = 50mA. (4) l c • 150mA, V cc - 30V, l B 1 = l B 2 = 15mA. 15) l c 
V CC = 10V, f = 1kHz. 



SJOlSjSUt 



PNP Transistors 



2 



MEDIUM POWER (Continued) 





Case 
Style 


v CBO 
IV) 
Min 


VCEO 
(V) 
Min 


V E BO 
(V) 
Min 


'CBO v 

(nA) ® « 
Max 11 


"EE e 'C gV C E 
Min Max (mA) (V) 


VCEISATI VBEISATI 

(V) & (V) ® (m A) 
Max Min Max 


c ob 
(pF) 
Max 


,T ic 

Min Max 


<off 
Insl 
Max 


NF 




Process 
No. 


Type 
No. 


(dBI 
Max 


Test 
Condition 


NSD203 


TO-202 
(351 


60 


45 


5 


100 60 


30 1 A 5 
50 500 5 
120 360 100 5 
50 10 5 


0.2 0.9 100 


30 


60 50 








77 


NSD204 


TO-202 
(351 


100 


80 


7 


100 100 


10 1A 5 
50 150 100 5 
20 10 5 


0.2 0.9 100 
0.5 1 .2 500 


30 


60 50 








79 


NSD205 


TO-202 


100 


80 


7 


100 100 


10 1A 5 


0.2 0.9 100 


30 


60 50 








79 




(35) 










120 360 100 5 
20 10 5 


0.5 1 .2 500 














NSD206 


TO-202 
(35) 


140 


100 


7 


100 140 


25 500 5 
50 150 100 5 


0.2 0.9 100 


30 


60 50 








79 














20 10 5 


0.5 1.2 500 














NSD6180 


TO-202 
(35) 




75 




500 80 


10 1A 2 
40 250 500 2 
30 50 2 


0.5 1 .2 500 


30 


50 50 








78 










NSD6181 


TO-202 
135) 




50 




500 60 


10 1A 2 
40 250 500 2 
30 50 2 


0.5 1.2 500 


30 


50 50 








78 


NSDU51 


TO-202 
(35) 


40 


30 


5 


100 30 


50 1A 1 
60 100 1 
55 10 1 


0.7 1A 


30 


50 50 








77 


NSDU51A 


TO-202 
(351 


50 


40 


6 


100 40 


50 1A 1 
60 100 1 
55 10 1 


0.7 1A 


30 


50 50 








77 


NSDU52 


TO-202 
(35) 


60 


40 


5 


100 40 


30 500 10 
50 300 150 10 
50 10 10 


0.4 1.3 150 


20 


150 20 








77 


NSDU55 


TO-202 
(35) 


60 


60 


4 


100 60 


20 500 1 
50 250 1 
80 50 1 


0.35 250 


30 


50 200 








78 








NSDU56 


TO-202 
(35) 


80 


80 


4 


100 80 


20 500 1 
50 250 1 


0.35 250 


30 


50 200 








79 














80 50 1 
















NSDU57 


TO-202 


100 


100 


4 


100 100 


20 500 1 


0.35 250 


30 


50 200 








79 




(35) 










50 250 1 
80 50 1 
















NSE170 


TO-202 
(36) 




40 




100 60 


12 1.5A 1 
30 500 1 
50 250 100 1 


0.9 1.5 1.5A 




50 100 








77 












0.3 500 















s 



MEDIUM POWER (Continued) 







v CBO 
(V) 
Min 


VCEO 
(V) 
Min 


VEBO 
(V) 
Min 














V BE(SAT) 
& (V) 
Min Max 


















Type 
No. 


Case 
Style 


'CBO 
InA) ts 
Max 


VCB 
(V) 


h 

Min 


FE £ 
Max 


(mAI* 


VCE 
(V) 


V CE(SAT) 
(V) 
Max 


a 'C 
ImAI 


Cob 
(pF) 
Max 


*T 

(MHz) e 
Min Max 


'c 

ImAI 


'off 
(ns) 
Max 


NF 
(dBI 
Max 


Test 
Condition 


Process 
No. 


NSE171 


TO-202 

\JO) 




60 




100 


80 


12 
30 
50 


250 


1.5A 

500 

100 


1 

1 

1 


0.9 
0.3 


1.5 


1.5A 
500 




50 


100 








78 


PN4354 


TO-92 
(72) 


60 


60 


5 


50 


50 


30 
40 
50 




500 
100 
10 


10 
10 
10 


0.15 
0.5 


0.9 
1.1 


150 
500 


30 


100 500 


50 


400 


3 


3/5 


67 


500 














40 

25 




1 

0.1 


10 
10 


















PN4355 


TO-92 
(72) 


60 


60 


5 


50 


50 


75 
75 




500 
100 


10 
10 


0.15 


0.9 


150 


30 


100 500 


50 


400 


3 


3/5 


67 
















100 

75 

60 


400 


10 
1 

0.1 


10 
10 
10 


0.5 


1.1 


500 
















PN4366 


TO-92 
(72) 


80 


80 


5 


50 


50 


30 
40 
50 


250 


500 
100 
10 


10 
10 
10 


0.15 
05 


0.9 
1.1 


150 
500 


30 


100 500 


50 


400 


3 


3/5 


67 














40 

25 




1 

0.1 


10 
10 






















TN4036 


TO-92+ 


90 


65 


7 


20 


60 


20 




500 


10 


0.65 


1.4 


150 


30 


60 


50 


700 




4 


67 




(91) 












40 
20 


140 


150 

0.1 


10 
10 


















TN4037 


TO-92+ 
(911 


60 


40 
































7 


250 


60 


50 
15 


2 


150 
1 


10 
10 


1.4 




150 


30 


60 100 


50 








67 



TEST CONDITIONS: 

(1) l C = 50mA, V CC = 100V, l B 1 • l B 2 ; 5mA. (2) l c = 500 nA, V C E = 10V, f = 1 kHz. (3) l C - 500mA, V cc - 30V, l B 1 = l B 2 = 50mA. (4) l c = 150mA, V cc = 30V, l B 1 - l B 2= 16mA. (5) l c = 100 |iA, 
V CC = 10V, f= 1kHz 



sjoisisueji dNd 



3 



POWER 



Type 
No. 


Case 
Style 


(V) 
Min 


v CEO 
(V) 
Min 


(V) 
Min 


Ices* 

'CEXt 
ImA) 
Max 


V C B 
(VI 


Min 


n FE a 

Max 


(Al * 


V C E 
(V) 


V CE(SAT) 
(V) 


V BE(SATI 
8, (VI ( 
Min Max 


i> 'c 
' (A) 


**ob 
(pF) 


'T 

(MHz) § 
Min Max 


ic 

(Al 


Process 


2N4918 


TO-126 




40 




100 


40 


10 
20 
40 


100 


1 

0.5 
0.05 


J 


0.6 


1.3 


1 


100 


3 


025 


3C 


2N4919 


TO-126 




60 




100 


60 


10 
20 
40 


100 


1 

0.5 
0.05 




0.6 


1.3 


1 


100 


3 


0.25 


3C 


2N4920 


TO-126 




80 




100 


80 


10 
20 
40 


100 


1 

0.5 
0.05 




0.6 


1.3 


1 


100 


3 


0.25 


3C 


2N5193 


TO-126 




40 




100 


40 


10 
25 


100 


4 

1.5 


2 
2 


0.6 
1.2 







1.5 
4 




2 


1 


3E 


2N5194 


TO-126 




60 




100 


60 


10 
25 


100 


4 

1.5 


2 
2 


0.6 
1.2 




1.5 

4 




2 1 


3E 


2N5195 


TO-126 




80 




100 


80 










0.6 
1.2 




1.5 
4 








3E 






7 

20 


80 


4 

1.5 


2 
2 






2 


1 


2N6034 


TO-126 




40 




500 


40 


100 


15,000 


4 


3 


2.0 




2 


200 


25 


0.75 


3J 
















750 
500 


2 

0.05 


3 
3 


3.0 


4.0 


4 










2N6035 


TO-126 




60 




500 


60 


100 
750 
500 


1 5.000 


4 

2 

0.5 


3 
3 
3 


2.0 
3.0 


4.0 


2 
4 


200 


25 


0.75 


3J 


2N6036 


TO-126 




80 




500 


80 


100 
750 
500 


15,000 


4 

2 

0.5 


3 
3 
3 


2.0 
3.0 


4.0 


2 
4 


200 


25 


0.75 


3J 


2N6106 


TO-220 
Lead 




70 




100* 


75 


5 

JU 




1DU 


6.5 


4 
4 


1.0 




2 

6 5 


250 


10 


0.5 


5E 




Form + 
Clip 






























2N6107 


TO-220 




70 




100* 


75 


5 

30 


150 


6.5 
2 


4 
4 


1.0 
2.0 




2 

6.5 


250 


10 


0.5 


5E 


2N6108 


TO-220 
Lead 
Form + 
Clip 




50 




100 f 


56 


5 

30 




6.5 
2.5 


4 
4 


1.0 
2.0 




2.5 
6.5 


250 


10 


05 


5E 






150 




2N6109 


TO-220 




50 




100 f 


56 


5 

30 


150 


6.5 
2,5 


4 
4 


1.0 
2.0 




2.5 
6.5 


250 


10 


0.5 


5E 


2N6110 


TO-220 
Lead 
Form + 
Clip 




30 




IOC 








6.5 
3 










250 


10 


0.5 


5E 






37.5 


5 

30 


150 


4 
4 


1.0 
2.0 




3 

6.5 



































MJM POWER (Continued) 







v CB0 
1V) 
Min 


VCEO 
(V) 
Min 


v E bo 

(V) 
Min 


'CES' 
'CEX* @ 

(MA) 

Max 

























Type 

No. 


Case 
Style 


V C B 

(V) 


Min 


n FE 

Ma> 


* (A) & 


V C E 
(V) 


VCE(SAT) 
(V) 
Max 


V BE(SAT) 
& (V) 
Min Max 


I 

® IAI 


Cob 
(pF) 
Max 


«T 

{MHz) IS 
Min Max 


'C 

I A) 


Process 


2Nol 1 1 


TO- 220 




30 




100 f 


37.5 


5 

30 


150 


6.5 
3 


4 
4 


1.0 
2.0 




3 

6.5 


250 


10 


0.5 


5E 


2ND 1 24 


xn ion 




45 




mn 


4 R 


10 
25 




4 


2 


0.6 




1.5 
4 




1 

2.5 


1 


5E 










100 


1.5 


2 


1.4 










2Nfa l/o 


TO-220 




60 




100 


60 


10 
25 


100 


4 

1.5 


2 
2 


0.6 
1.4 




1.5 
4 




2.5 




5c 


























2N61 26 


TO-220 




80 




100 


80 


7 

20 


80 


4 

1.5. 


2 
2 


0.6 
1.4 




1 .5 




2.5 1 


5E 






















2N6132 


TO-220 




40 




100 


40 


7 

20 


100 


7 

2.5 


4 
4 


1 4 








2.5 1 


5E 


2NS133 


TO-220 




GO 




100 


60 


7 

on 


inn 


7 

1 R 


4 

A 


1 .4 




7 




2.5 




5E 






























9 Nfi 1 3d 

Z INO 1 OH 


TO-220 




80 




100 


60 


5 
20 


100 


7 

2.5 


4 
4 


2.0 




7 




2.5 




5E 
































2N6489 


TO-220 




40 




soot 


45 


5 

20 


150 


15 
5 


4 
4 


1.3 
3.5 




5 
15 




5 




5A 


























TO-220 




60 




500f 


65 


5 
20 


150 


15 
5 


4 
4 


1.3 
3.5 




5 

15 




5 




5A 


























2N6491 


TO-220 




80 




500 f 


85 


5 

20 


150 


15 
5 


4 
4 


1.3 
3.5 




5 

15 




5 




5A 


























D45C1 


TO-220 




30 




10' 


40 


10 
25 




1 




0.5 


1.3 


1 


125 


3 


0.02 


6F 


















0.2 


















D45C2 


TO-220 




30 




10* 


40 


20 




1 

0.2 




0.5 


1.3 


1 


125 


3 


0.02 


5F 
















40 


120 


















D45C3 


TO-220 




30 




10* 


40 


20 




2 




0.5 


1.3 


1 


126 


3 


002 


5E 














40 




0.2 


















D45C4 


TO-220 




45 




10* 


56 


10 
25 




| 




0.5 


1.3 


1 


125' 




0.02 


5F 


















0.2 


















D45C5 


TO-220 




45 




10' 


55 


20 
40 


120 


1 




0.5 


1.3 


1 


125 


3 


0.02 


5F 














0.2 














D45C6 


TO-220 




45 




10* 


56 


20 
40 




2 

0.2 




0.5 


1.3 


1 


125 


3 


0.02 


5E 


































D45C7 


TO-220 




60 




10' 


70 


10 
25 




1 

0.2 




0.5 


1.3 


1 


125 


3 


0.02 


5F 







































sjojsjsueji dNd 



PNP Transistors 



2 



POWER (Continued) 



Type 
No. 


Case 
Style 


V C BO 
(V) 
Min 


V C EO 
(V) 
Min 


v EBO 
(VI 
Min 


'CES* 
'CEXt e 
(MA) 


VCB 

IV) 


Min 


he- 
"FE 

Max 


S ,A C . * 


Lb 

(VI 


V CE(SATI 
(VI s 
Max 


V BEISAT) 

(VI 
Min Max 


(A) 


C b 
(pFI 
Max 


* T <C 

(MHil » J- 
Min Max 


Process 


































D45C8 


TO-220 




60 




10" 


70 


20 




1 


1 


0.5 


1.3 


1 


125 


3 0.02 


5F 
















40 




0.2 






































D45C9 


TO-220 




60 




10' 


70 


20 




2 


1 


0.6 


1.3 


1 


125 


3 0.02 


5E 














40 




0.2 












D45C10 


TO-220 




80 




10* 


90 


10 




1 


1 


0.5 


1.3 


1 


126 


3 0.02 


5F 














25 




0.2 


1 










D45C11 


TO-220 




80 




10' 


90 


20 




1 


J 


0:6 


1.3 


1 


125 


3 0.02 


5E 
















40 


120 


0.2 












D45C12 


TO-220 




80 




10' 


90 


20 




2 


1 


0.5 


1.3 


1 


125 


3 002 


5E 
















40 




0.2 
















D45H1 


TO-220 




30 




10 


30 


20 




4 


; 


1.0 


1.5 


8 






5A 
















35 




2 - 










































D45H2 


TO-220 




30 




10 


30 


40 
60 




4 

2 




1.0 


1.5 


8 






5A 


D45H4 


TO-220 




45 




10 


45 


20 
35 




4 

2 


; 


1.0 


1.5 


8 






5A 


D45H5 


TO-220 




45 




10 


45 


40 




4 


| 


1.0 


1.5 


8 






5A 
















60 




2 












































D45H7 


TO-220 




60 




10 


60 


20 




4 




1.0 


1.5 


8 






5A 
















35 




2 












































D45H8 


TO-220 




60 




10 


60 


4Q 




4 


1 


1.0 


1.5 


8 






5A 














60 




2 
















D45H10 


TO-220 




80 




10 


80 


20 
35 





4 

2 


j 


1.0 


1.5 


8 






5A 


D45H11 


TO-220 




80 




10 


80 


40 
60 




4 

2 




1.0 


1.5 


8 






5A 
































MJE170 


TO-126 




40 




0.1 


60 


12 
30 




1.5 
0.5 




1.7 
0.9 


2.0 
1.5 


3 

1.5 


50 


50 0.1 


77 














50 


250 


0.1 




0.3 




0.5 








MJE171 


TO-126 




60 




0.1 


80 


12 
30 
50 




1.5 




1.7 


2.0 


3 


50 


50 0.1 


78 










250 


0.5 
0.1 




OS 

0.3 


1.5 


1.5 
0.5 








MJE172 


TO-126 




80 




0.1 


100 


12 
30 
50 


250 


1.5 
0.5 
0.1 




1.7 
0.9 
0.3 


2.0 
1.5 


3 

1.5 
0.5 


50 


50 0.1 


79 


MJE370 


TO-126 




30 




100 


30 


25 




1 














3C 


MJE371 


TO-126 




40 




100 


40 


40 




1 










3E 


MJE700 


TO-126 




60 




200 60 


750 




1.6 


3 


2.5 




1.5 




1 1.5 


3J 



22 

iJ POWER (Continued) 



Type 
No. 


Case 
Style 


v CBO 
(V) 
Min 


v CEO 
(V) 
Min 


v EBO 
(V) 
Min 


Ices* 

ICEXt @ 
(nAI 
Max 


VCB 

(V) 


Min 


n FE e 
Max 


(Al 8 


, v CE 

(VI 


V CEISATI V BE (SATI 
(V) & (VI 
Max Min Max 


@ 'c 

(A) 


c ob 
(pFI 
Max 


*T 

(MHz) e 
Min Max 


"c 

(A) 


Process 






























MJE701 


TO-126 




60 




200 


60 


750 


2 


3 


2.8 


2 




1 1.5 


3J 


MJE702 


TO- 126 




80 




200 


80 


750 





1.5 


3 


2.5 


1.5 




1 


1.5 


3J 


IVU c /uo 


TO-1 26 




80 




200 


80 


750 




2 


Q 


2.8 


2 




1 


1.5 


3J 


MJE710 


TO-126 




40 




100+ 


40 


8 




1 




1.0 1.3 


1.5 








77 












- 




20 




0.5 




0.4 


0.5 






















40 




0.1 5 




0.15 


0.15 








MJE711 


TO-126 




60 




100+ 60 


8 




1 




1.0 1.3 


1.5 






n a 


78 
















20 




0.5 




0.4 


0.5 
























40 




0.15 




0.15 


0.15 










MJE712 


TO-1 26 




80 




100+ 


80 


8 

20 




1 

0.5 




1.0 1.3 
0.4 


1.5 
0.5 








79 
















40 




0.15 




0.15 


0.15 










NSP42 


TO-220 




40 




400* 


40 


15 
30 


75 


3 

0.3 


4 
4 


1.5 


5 




3 


0.5 


5E 


NSP42A 


TO-220 




60 




400* 


60 


15 

30 


76 


3 

0.3 


4 




5 




3 


0.5 


5E 






4 


1.5 




NSP42B 


TO-220 




80 




400* 


80 


15 
30 


75 


3 

0.3 


4 

4 


1.5 


5 




3 


0.5 


5E 


NSP42C 


TO-220 




100 




400* 


100 


15 
30 


75 


3 

0.3 


4 
4 


1.5 


5 




3 


0.5 


5E 


NSP105 


TO-220 




50 




100 


50 


25 


100 


2 


2 










5A 


























NSP370 


TO-220 




30 




100 


30 


25 1 1 








5F 


NSP371 


TO-220 




40 




100 


40 


40 














5F 


























NSP576 


TO-220 


45 


45 




100 


45 


25 1 1 


0.6 


1 




3 


0.5 


5F 












NSP578 


TO-220 


60 


60 




100 


60 


25 1 1 


0.6 


1 




3 


0.5 


5F 


NSP580 


TO-220 


80 


80 




100 


80 


15 1 1 


0.8 1 




3 


0.5 


5F 


NSP582 


TO-220 


100 


100 




100 


100 


15 








0.8 1 




3 


0.5 


5F 


NSP586 


TO-220 


45 


45 




100 


45 


25 
40 




2 

0.5 


2 
2 


0.8 


2 




3 


0.25 


5E 


NSP588 


TO-220 


60 


60 




100 


60 


20 




2 


2 


0.8 


2 




3 


0.25 


5E 
















40 




0.5 


2 








































NSP590 


TO-220 


80 


80 




100 


80 


15 
30 




2 

0.5 


2 
2 


0.8 


2 




3 


0.25 


5E 


NSPS96 


TO-220 


45 


45 




100 


45 


25 
40 




3 
1 


2 
2 


1.0 


3 




3 


0.25 


5E 


NSP598 


TO-220 


60 


60 




100 


60 


25 
40 




3 
1 


2 
2 


1.0 


3 




3 


0.25 


5E 





































sjojsisueji dNd 



PNP Tran 




POWER (Continued) 



Typ« 

No. 


Cm 
Style 


VcBO 

(V) 
Min 


VCEO 
(V) 
Min 


VEBO 

IV) 
Min 


ices' 

ICEXt m V CB 
IpAl (VI 
Max 


her If* Vpe 
Min Max (A) (VI 


VCE(SAT) V BE |SAT) , 

(v) & (v) © ~ 

Max Min Max 


C„b 
(pF) 
Max 


H ic 

(MHz) «? ~| 
Min Max 


NSP600 


TO-220 


80 


80 




100 80 


15 3 2 
30 1 2 


1.0 3 




3 0.25 


NSP602 


TO-220 




100 




100 100 


15 3 2 


1.0 3 




3 0.25 


NSP692 


TO-220 




45 




200 45 


750 3 3 


2.5 3 




1 3 


NSP696A 


TO-220 




45 




200 45 


750 4 3 


2.8 4 




1 3 


NSP698 


TO-220 




60 




200 60 


750 3 3 


2.5 3 




1 3 


NSP698A 


TO-220 




60 




200 60 


750 4 3 


2.8 4 




1 3 


NSP700 


TO-220 




80 




200 80 


750 3 3 


2.5 3 




1 3 


NSP700A 


TO-220 




80 




200 80 


750 4 3 


2.8 4 




1 3 


NSP702 


TO-220 




100 




200 100 


750 3 3 


2.5 3 




1 3 


ItOr^U 1 \J 


70-220 




40 




400 40 


15 3 4 
25 125 1 4 


15 5 
1 .0 3.5 




3 0.5 




TO-220 




60 




400 60 


15 3 4 
25 125 1 4 


1 .5 5 
1 .0 3.5 




3 0.5 


NSP2090 


TO-220 




60 




200 60 


750 3 3 


2.5 3 




1 3 


NSP2091 


TO-220 




60 




200 60 


750 4 3 


2.5 4 




1 3 


NSP2092 


TO-220 




80 




200 80 


750 3 3 


2.5 3 




1 3 


NSP2093 


TO-220 




80 




200 80 


750 4 3 


2.5 4 




1 3 


NSP2370 


TO-220 




40 




200* 40 


10 1 4 
40 200 0.2 4 


0.7 1 




3 0.6 


NSP2490 


TO-220 




40 




200* 40 


8 3 4 
20 100 1 4 


1.2 3 
0.6 1 




3 0.5 


NSP2491 


TO-220 




60 




200* 60 


8 3 4 


1.2 3 




3 0.5 














20 100 1 4 


0.6 1 






NSP2955 


TO-220 




60 




100 70 


5 10 4 
20 70 4 4 


8.0 10 

1.1 4 




2 0.5 






















NSP3740 


TO-220 




60 




100 60 


10 1 1 


0.6 1 


100 


3 0.1 




Lead 










20 0.6 1 










Bend + 
Clip 










30 100 0.25 1 
40 0.1 1 
























NSP3741 


TO-220 
Lead 
Bend + 
Clip 




80 




100 80 


10 1 1 
20 0.5 1 
30 100 0.25 1 


0.6 1 


100 


3 0.100 















AM POWER (Continued) 













ices' 

'CEXt e 
(ma) 






















Type 
No. 


Case 
Style 


v CBO 
(VI 
Min 


VCEO 
(VI 


v EBO 
(V) 
Min 


V C B 

(V) 


Min 


n FE 

Max 


9 (Al 


8, V CE 
(V) 


V CE(SAT) Vbe(SAT) 
(VI & (VI 
Max Min Max 


® 'c 

(Al 


c ob 
(pF) 
Max 


[MHz) <9> 
Min Max 


ic 

(Al 


Process 












Max 












NSP4918 


TO-220 




40 




100 


40 


10 




1 


1 


0.6 1 .3 1 




3 


0.25 


5F 














20 
40 


100 


0.5 
0.05 


1 
1 










NSP4919 


TO-220 




60 




100 


60 


10 
20 


100 


1 

0.5 


1 
1 


0.6 1 .3 


1 




3 


0.25 


5F 
















40 




0.05 


1 












NSP4920 


TO-220 




80 




100 


80 


10 

20' 
40 




1 


1 


0.6 1.3 


1 




3 


0.25 


5F 
















100 


0.5 
0.05 


1 
1 














NSP5193 


TO-220 




40 






100 


40 


10 

25 

















1 


5E 






100 


4 

1.5 


2 
2 


1.4 

0.6 


4 

1.5 




2 


NSP5194 


TO-220 




60 






100 


60 









2 
2 


1.4 
0.6 






2 


1 


5E 






10 
25 


100 


4 

1.5 


4 

1.5 




NSP5195 


TO-220 




80 




100 


80 


70 
20 
















1 


5E 






80 


4 

1.5 


2 
2 


1.4 
0.6 


4 

1.5 




2 


NSP5974 


TO-220 




40 




100* 









300 


2 


0.5 


5A 






60 


7 

20 
40 


120 


b 

2.5 
0.5 


Z 
2 
2 


1.7 z.b 
0.6 


5 

2.5 


NSP5975 


TO-220 




60 




100+ 


80 


7 

20 
40 


120 


5 

2.5 
0.5 


2 
2 
2 


1.7 2.5 


5 


300 


2 


0.5 


5A 
















0.6 


2.5 










NSP5976 


TO-220 




80 




100+ 


100 


7 

20 
40 




5 

2.5 
0.5 


2 
2 
2 


1 .7 2.5 
0.6 


5 

2.5 


300 


2 




0.5 


5A 






120 


NSP5980 


TO-220 




40 




100+ 


60 


7 

20 


120 


8 
4 


2 

2 i 


1.7 2.6 


8 


350 


2 


0.5 


5A 
















40 




1 


2 


0.6 


4 








NSP5981 


TO-220 




60 




100+ 


80 


7 




8 


2 


1.7 2.5 


8 


350 


2 


0.5 


5A 














20 
40 


120 


4 
1 


2 
2 


0.6 


4 








NSP5982 


TO-220 




80 




100+ 


100 


7 

20 


120 


8 
4 


2 
2 


1.7 2.5 8 


350 


2 


0.5 


5A 














40 




1 


2 


0.6 


4 








TIP30 


TO-220 




40 




200' 


40 


15 
40 


75 


1 

0.2 


4 
4 


0.7 


1 




3 


02 


5F 


TIP30A 


TO-220 




60 




200* 


60 


15 


75 


1 


4 


0.7 


1 




3 


0.2 


5F 














40 




0.2 


4 










TIP30B 


TO-220 




80 




200' 


80 


15 
40 


75 


1 

0.2 


4 
4 


0.7 


1 




3 


0.2 


5F 





































sjojsisueji dNd 



PNP Transistors 



AM POWER (Continued) 







VcBO 

(V) 
Min 


VCEO 
(V) 
Min 


VEBO 
IV) 
Mm 


'CES' 
'CEXt 9 
((iAI 






















Type 
No. 


Ca«e 
Style 


VCB 

(VI 


Min 


Max 


@ (A) 


VCE 
(V) 


VCEISAT) V BE | SAT ) 
(V) & (V) 
Max Min Max 


(A) 


c ob 
(pF) 
Max 


»T 

(MHz) e 
Min Max 


'C 

(A) 












Max 


















TIP30C 


TO-220 




100 




200' 


100 


15 
40 


75 


1 

0.2 


4 
4 


0.7 


1 




3 


0.2 


5F 


TIP32 


TO-220 




40 




200" 


40 


10 

25 


50 


3 
1 


4 
4 


1.2 3 




3 


0.5 


5F 


TIP32A 


TO-220 




60 




200* 


60 


10 


50 


3 


4 


1.2 


3 




3 


0.5 


5F 














25 


1 


4 










TIP32B 


TO-220 




80 




200" 


80 


10 
25 


50 


3 
1 


4 
4 


1.2 


3 




3 


0.5 


5F 


TIP32C 


TO-220 




100 




200' 


100 


10 
25 


50 


3 


4 


1.2 


3 




3 


0.5 


5F 


TIP42 


TO-220 




40 




400- 


40 


15 

30 


75 


3 

0.3 


4 
4 


1.5 


6 




3 


0.5 


5A 


TIP42A 


TO-220 




60 




400' 


60 


15 
30 


75 


3 

0.3 


4 
4 


1.5 


6 




3 


0.5 


5A 


TIP42B 


TO-220 




80 




400' 


80 


15 
30 


75 


3 

0.3 


4 
4 


1.5 


6 




3 


0.5 


5A 


TIP42C 


TO-220 




100 




400* 100 


15 

30 


75 


3 

0.3 




1.5 


6 




3 


0.5 


5A 






4 
4 




TIP62 


TO-220 




40 




200* 


40 


16 
40 


100 


0.5 
0.05 


4 
4 


0.7 


0.5 




3 


0.05 


5F 


TIP62A 


TO-220 




60 




200* 


60 


15 
40 


100 


0.5 
0.05 


4 
4 


0.7 


0.5 




3 


0.05 


5F 


TIP62B 


TO-220 




80 






200" 


80 


15 
40 


100 


0.5 
0.05 


4 
4 


0.7 


0.5 




3 


0.05 


5F 


TIP62C 


TO-220 




100 




200' 


100 


15 


100 


0.5 


4 


0.7 


0.5 




3 


0.05 


5F 
















40 




0.05 


4 














TIP11S 


TO-220 




60 




1 mA 


60 


500 
1000 




2 
1 


4 
4 


2.5 


2 






5J 


TIP116 


TO-220 




80 




1 mA 


80 


500 
1000 




2 
1 


4 
4 


2.5 


2 






5J 


TIP117 


TO-220 




100 




1 mA 


100 


500 




2 


4 


2.5 


2 








5J 
















1000 




1 


4 












TIP125 


TO-220 




60 




200 


60 


1000 
1000 




3 

0.5 


3 
3 


4.0 
2.0 


5 
3 






5K 


TIP126 


TO-220 




80 




200 


80 


1000 




3 


3 


4.0 


6 








5K 










1000 




0.5 


3 


2.0 


3 










TIP127 


TO-220 




100 




200 


100 


1000 
1000 




3 

0.5 


3 
3 


4.0 

2.0 


5 

3 






5K 



AM POWER (Continued) 



Type 
No. 


Case 
Style 


VcBO 
(VI 
Min 


V C EO 
(V) 
Min 


v EBO 
(V) 
Min 


'CES' 
'CEXt 
(MAI 
Max 


VCB 

(VI 


Min 


n FE a 
Max 


'C 
(A) 




ft VcE 
* (V) 


V CE(SAT) 
(V) 
Max 


V BE(SAT) .„ 
& (VI ( J= 
Min Max 


C b 
IpFI 
Max 


*T 

(MHzl @ 
Min Max 


'C 

(A) 


Process 


TIP135 


TO-220 




60 




200 


60 


1000 
500 


15,000 


4 
1 


4 
4 


3.0 
2.0 


6 
4 


200 




5K 


TIP136 


TO-220 




80 




200 


80 


1000 
500 


15,000 


4 
1 


4 
4 


3.0 
2.0 


6 
4 


200 




5K 


TIP137 


TO-220 




100 




200 


100 


1000 
500 


16,000 


4 
1 


4 
4 


3.0 
2.0 


6 
4 


200 




5K 



JuM DUAL DIFFERENTIAL AMPS 



Type 
No. 


Case 
Style 


v CBO 
(V) 
Min 


V C EO 
(V) 
Min 


VEBO 
(VI 
Min 


ICBO 
(nAI 9 
Max 


V C B 

(VI 


Min 


HFE 

Max 


9 'C 
(mAI 


HFE 1 
HFE 2 

<%l 


Vbe 1 
_V BE 2 

(mV> 
Max 


AV BE 1 
_V 8E 2 

AT 
<MV/°CI 


Cob 
(pF) 
Max 


Min 


(MHzl 

Max 


NF 
(dBI 
Max 


Test 
Condition 


No. 


















Max 


Max 












2N3347 


TO-78 


60 


45 


6 


10 


45 


60 
40 


300 


1 

0.01 


10 


5 


10 


6 


60 


240 


4 




62 


2N3348 


TO-78 


60 


45 


6 


10 


46 


60 
40 


300 


1 

0.01 


20 


10 


20 


6 


60 


240 


4 




62 


2N3349 


TO-78 


60 


45 


6 


10 


45 


60 
40 


300 


1 

0.01 


40 


20 


40 


6 


60 


240 


4 




62 


2N3350 


TO-78 


60 


45 


6 


10 


45 


150 
100 


300 


1 

0.01 


10 


5 


10 


6 


60 


240 


4 




62 


2N3351 


TO-78 


60 


45 


6 


10 


45 


150 
100 


300 


1 

0.01 


20 


10 


20 


6 


60 


240 


4 




62 


2N3352 


TO-78 


60 


45 


6 


10 


45 


150 
100 


300 


1 

0.01 


40 


20 


40 


6 


60 


240 


4 




62 


2N3726 


TO-78 


45 


45 


5 


10 


30 


115 




50 


10 


5 


20 


8 


200 


600 


4 


2 


62 














13B 
120 
80 


350 


1 

0.1 
0.01 




















2N3727 


TO-78 


45 


45 


5 


10 


30 


115 




50 


10 


2.5 


10 


8 


200 


600 


4 


2 


62 
















135 


350 


1 


































120 


0.1 


































80 




0.01 





















TEST CONDITIONS: 

(1) l C - 10 (»A, V CE = 5V, f = 15.7kHz. 12) l C . 30 »A, V CE - 6V, f - 1kHz. (3) l C - 100 (lA. V CE • 10V, f = 1kHz. (4) l C = 20 mA, V CE = SV, f = 1kHz. 



sjojsjsueji dNd 



PNP Transistors 



AM DUAL DIFFERENTIAL AMPS (Continued) 



Type 
No. 


Case 
Style 


v CBO 

(V) 
Min 


(V) 
Min 


V EBO 
(VI 
Min 


. 

'CBO v 

(nAI @ , CB 
Max 




HFE 2 

(%l 

Max 


Vbe 1 


AU„ 1 

- iv BE 
i/ 2 


**ob 
(pFI 
Max 


'T 

(MHz) 
Min Max 


NF 




No. 
Process 


Min 


HFE 

Max 


e ' c 

(mAI 


-v B e 2 

(mVI 
Max 


V BE 

AT 
(mV/°CI 
Max 


(dBI 
Max 


Test 
Condition 


2N3800 


TO-71 


60 


60 


5 


10 50 


125 




10 








4 


100 500 


3 


4 


62 








150 
150 
150 
100 


450 
450 
450 


1 

0.5 
0.1 
0.01 








' ~ 









2 N 3806 


TQ 78 — 


60 


60 





10 50 


1 25 
150 


450 


1 

1 










1 nn con 






62 














150 


450 


0.5 






























150 


450 


0.1 






























100 




0.01 
















































2N3807 


TO-78 


60 


60 




10 50 


250 
300 


900 


10 








4 


100 500 


1.5 


3 


62 














1 






























300 


900 


0.5 






























300 


900 


0.1 






























225 




0.01 


















2N3808 


TO-78 


60 


60 


5 


10 50 


125 
150 
150 
150 


450 
450 
450 


10 
1 

0.5 
0.1 


20 


5 


20 


4 


100 500 


3 


3 


62 














100 




0.01 


















2N3809 


TO-78 


60 


60 


5 


10 50 


250 




10 


20 


5 


20 


4 


100 500 


1.5 


3 


62 














300 


900 


1 






























300 


900 


0.5 




























300 
250 


900 


0.1 
0.01 


















2N3810 


TO-78 


60 


60 


5 


10 50 


125 




10 


10 


3 


10 


4 


100 500 


3 


3 


62 














150 
150 
150 
100 


460 
450 
450 


1 

0.5 
0.1 
0.01 


















2N3810 


TO-78 


60 


60 




10 50 


125 






10 








100 500 






62 


5 




10 


5 


10 


5 


3 


3 


J, JTX, 












150 


450 


1 


















JTXV 












150 


450 


0.5 






























150 


450 


0.1 






























100 




0.01 

















































£i DUAL DIFFERENTIAL AMPS (Continued) 




















Type 


Case 


V C BO 
(V) 
Min 


VcEO 
IVI 
Min 


v EBO 

(VI 
Min 


'CBO v 
Max IVI 


H FE g, lc 
Min Max (mA) 


HFE 1 
HFE 2 
IKI 


Vbe 1 

-V BE 2 
(mV) 


AV BE 1 

-vbe 2 

AT 
l*iV/° C) 
Max 


C D b 
(pFI 
Max 


H 

IMHz) 
Min Max 


NF 
(dBI 


Test 
Condition 


No. 
Process 








Max 


Max 






2N3810A 


TO-78 


60 


60 


5 


10 50 


125 10 
150 450 1 
150 450 0.5 
150 450 0.1 


5 


1.5 


5 


4 


100 500 


3 


3 


62 














100 0.01 


















2N3811 


TO-78 


60 


60 


5 


10 50 


250 10 
300 900 1 
300 900 0.5 
300 900 0.1 
225 0.01 


10 


3 


10 


4 


100 500 


1.5 


3 


62 


2N3811 


TO-78 


60 


60 


5 


10 50 


250 10 


10 


3 


10 


5 


100 500 


1.5 


3 


62 


J, JTX, 












300 900 1 


















JTXV 












300 900 0.5 
300 900 0.1 
225 0.01 


















2N381 1 A 


TO-78 


60 


60 


5 


10 50 


250 10 
300 900 1 
300 900 0.5 
300 900 01 
225 0.01 


5 


1.5 


5 


4 


100 500 


1.5 


3 


62 


2N4015 


TO-78 


60 


60 


5 


10 50 


115 50 
135 350 1 
120 0.1 
80 0.01 


10 


5 


20 


8 


200 600 


4 


2 


62 












2N4016 


TO-78 


60 


60 


5 


10 50 


115 50 
135 350 1 
120 0.1 
80 0.01 


10 


2.5 


10 


8 


200 600 


4 


2 


62 


2N4017 


TO-78 


80 


80 


6 


10 70 


90 50 
100 10 
100 500 1 
100 0.1 








6 


40 160 


3 


4 


62 














100 350 0.01 






























60 0.001 


















TEST CONDITIONS: 




























(1) l C = 10 mA, V C E - 5V,f= 15.7kHz. (2) l c 


= 30 M A, V CE = 5V, f = 1kHz. (3) l C = 100 mA. V CE = 10V, f 


- 1kHz. (4) 


I C = 20mA, V C E = 5V, f=1kHz. 







































sjojsisueji dNd 



PNP Tra 



'A 



DUAL DIFFERENTIA! 



MPS (Po 



Type 


Caw 


V CB o 
(V) 


VCEO 
(V) 


V E BO 

(VI 


'CBO 
InAI 


a V CB 




HFE 


■ £ 

(mAI 


H FE 1 
HFE 2 

(%> 

Max 


VBE 1 
_V Bf 2 


AV BE 1 

-v B e 2 

AT 


Cob 
IpFI 
Max 




<T 
(MHz) 


NF 

(dBI 


Test 
Condition 




No. 


Style 


Min 


Min 


Min 


Max 


* (VI 


Min 


Max 


ImVI 
Max 


(iAf/°C) 
Max 


Min 


Max 


Max 




2N4018 


TO-7B 


60 


60 


6 


10 


SO 


90 
100 
100 
100 


600 


50 
10 
1 

0.1 








6 


40 


160 


3 


4 


















100 


600 


0.01 


































60 




0.001 




















2N4019 


TO-78 


46 


45 


6 


10 


30 


180 




50 








6 


50 


160 


2 


4 
















200 
250 


600 


10 


































1 


































250 




0.1 


































250 


500 


0.01 


































180 




0.001 




















2N4020 


TO-78 


45 


45 


6 


10 


30 


180 




50 


20 


5 


20 


6 


50 


160 


2 


4 












200 
250 
250 
250 
180 


600 
500 
500 


10 
1 

0.1 

0.01 

0.001 


















2N4021 


T078 


60 


60 


6 


10 


50 


90 

100 

100 

100 

100 

60 


600 
400 

350 


60 
10 
1 

0.1 

0.01 

0.001 


20 


6 


20 


6 


40 


160 


3 


4 




2N4023 


TO-78 


46 


45 


6 


10 


30 


180 
200 
250 
250 
250 


600 
500 
500 


50 
10 

1 

0.1 
0.01 


10 


3 


10 


6 


50 


160 


2 


4 


















180 




0.001 




















2N4024 


TO-78 


60 


60 


6 


10 


50 


90 

100 

100 


600 


50 
10 
1 


10 


3 


10 


6 


40 


160 


3 


4 


















100 
100 


400 
350 


0.1 
0.01 


































































60 




0.001 




















2N4025 


TO-78 


60 


60 


6 


10 


50 


180 




50 


10 


3 


10 


6 


50 


160 


2 


4 


















200 
250 
250 


600 
550 


10 
1 

0.1 



































250 
180 


500 


0.01 
0.001 





















TEST CONDITIONS: 

(1) l C = 10^A, V CE - 5V,f= 15.7kHz. (2) I C = 30mA, V CE • 5V, f = 1kHz. (3) l C = 100 mA, V C E " 10V, f» 1kHz. (4) l C ■ 20juA, V CE « 5V, f = 1kHz. 



9B 



■1 



Pro Electron Series 



'II 



to 



Type 

No. 


Case 
Style 


VCES* 
VCBO 
(V) 
Min 


V C EO 
(VI 
Min 


Vebo 

(V) 
Min 


Ices* 

!CB0 a V CB 
(nAl (V) 
Max 


hfe 

hfe 'C g, V CE 
1 kHz* (mA) (V) 
Min Max 


(VI (mA) 
Mm Max 


Cob 
(pFI 
Max 


fT ic 
(MHz) e, 1 -, 
ui (mA) 
Mm Max 


•off 

(ns) 
Max 


NF 
(dB) 
Max 


Test 
Condition 


Process 
No. 


BC107 


TO- 18 


50 


45 


6 


15* 50 


40 0.01 5 
125 500* 2 5 
40 0.01 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 


150 10 




10 




04 


BC107A 


TO-18 


50 


45 


6 


15* 50 


125 260* 2 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 


150 10 




10 


' " 


04 


BC1078 


TO-18 


50 


45 


6 


15* 50 


40 0.01 5 
240 500* 2 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 


150 10 




10 




04 


BC10S 


TO-18 


30 


20 


5 


15* 30 


40 0.01 5 
125 900* 2 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 


150 10 




10 




04 


BC108A 


TO-18 


30 


20 


5 


15* 30 


40 0.01 5 
125 260* 2 5 


0.6 100 
0.2 100 
55 7* 2 


4.5 


150 10 




10 


— ; 


04 


BC108B 


TO-18 


30 


20 


5 


15* 30 


40 0.01 5 
240 500* 2 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 


150 10 




10 


— ■ 


04 


BC108C 


TO-18 


30 


20 


5 


15* 30 


40 0.01 5 
450 900* 2 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 


150 10 




10 


1 


04 


BC109 


TO-18 


30 






1 5* 30 


-inn n ni c 
1UU U.U1 O 

240 900" 2 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 


1 50 1 




4 




04 


Dpi nop 


TO-18 


30 








1 nn r\ n 1 r; 
I UU U.U 1 _) 

240 500* 2 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 












BC109C 


TO-18 


30 


20 


5 


15* 30 


100 0.01 5 
450 900" 2 5 


0.6 100 
0.2 10 
0.55 0.7* 2 


4.5 


150 10 




4 




04 


BC140 


TO-39 


80* 


40 


7 


100* 60 


40 250 100 1 


1.0 1.8* 1 A 


25 


50 50 


850 




2 


14 


BC140-6 


TO-39 


80* 


40 


7 


100* 60 


40 100 100 1 


1.0 1.8* 1A 


25 


50 50 


850 




2 


14 


BC140-10 


TO-39 


80* 


40 


7 


100* 60 


63 160 100 1 


1.0 1.8* 1A 


25 


50 50 


850 




2 


14 


BC140-16 


TO-39 


80* 


40 


7 


100* 60 


100 250 100 1 


1.0 1.8* 1A 


25 


50 50 


850 




2 


14 


BC141 


TO-39 


100* 


60 


7 


100* 60 


40 250 100 1 


1.0 1.8* 1A 


25 


50 50 


850 




2 


14 


BC1416 


TO-39 


100* 


60 


7 


100* 60 


40 100 100 1 


1.0 1.8* 1A 


25 


50 50 


850 




2 


14 


BC141-10 


TO-39 


100* 


60 


7 


100* 60 


63 160 100 1 


1.0 1.8* 1A 


25 


50 50 


850 




2 


14 


BC143 


TO-5 


60 


60 


5 


50 40 


20 200 2 


1 .5 1 .5 500 
200 


20 


60 50 






2 


63 



Type 
No. 


Case 
Style 


VCES - 
v CBO 
(V) 


VCEO 
(V) 

Min 


VebO 
(V) 
Min 


'CES* 

'CBO @ V CB 
InA) (V) 
Max 


HFE 

1 kHz* (mAI (V) 
Mtn Max 


V . C ... T , V BE(SAT) 

<v. '» v «r*» , ,c a. 

Max 

Min Max 


(pE) 
Max 


(MHz) @ C A , 
... ,. (mAI 
Mm Max 


*off 
(ns) 
Max 


NE 
(dB) 
Max 


Test 
Condition 


Process 
No. 
























BC 146-1 


TO-92 
1741 


20 


20 


4 


50 40 


100 2 1 
80 200 0.2 0.2 


1 .5 1 .5 500 
200 


20 


60 50 






2 


04 


BC 146-2 


TO-92 
(741 


20 










1 .5 1 .5 500 
200 


20 


. 






2 


04 


20 


4 


50 40 


140 2 1 
140 350 0.2 0.2 


60 50 


BC 146-3 


TO-92 


20 


20 


4 


50 40 


280 2 1 


1.5 1.5 500 


20 


60 50 






2 


04 




(74) 










280 550 0.2 0.2 


200 














BC160 


TO-39 


40* 


5 


40 


100 40 , 


40 250 100 1 


1 .0 1 .7* 1 A 


30 


50 50 


650 




2 


67 


BC160-6 


TO-39 


40* 


5 


40 


100 40 


40 100 100 1 


1.0 1.7* 1A 


30 


50 50 


650 




2 


67 


BC160-10 


TO-39 


40* 


5 


40 


100 40 


63 160 100 1 


1.0 1.7* 1A 


30 


50 B0 


650 




2 


67 


BC160-16 


TO-39 


40* 


5 


40 


100 40 


100 250 100 1 


1.0 1.7* 1 A 


30 


50 50 


650 




2 


67 




TO-39 








100 60 










650 






67 


BC161 


60* 


5 


60 


40 250 100 1 


1.0 1.7* 1A 


30 


50 50 




2 


BC161-6 


TO-39 


60* 


5 


60 


100 60 


40 100 100 1 


1.0 1.7* 1 A 


30 


50 50 


650 




2 


67 


BC161-10 


TO-39 


60* 


5 


60 


100 60 


63 160 100 1 


1.0 1.7* 1 A 


30 


50 50 


650 




2 


67 


BC161-16 


TO-39 


60* 


5 


60 


100 60 


100 250 100 1 


1.0 1.7* 1A 


30 


50 50 


650 




2 


67 


BC167 


TO-92 
(74) 


60* 


45 


6 


15* 50 


110 2 5 
125 500* 2 5 


0.2 10 
0.6 100 


4.5 


150 10 




10 


1 


04 
















0.55 0.7" 2 














BC167A 


TO-92 
(74) 


60* 


45 


6 


15* 50 


110 260* 2 5 
125 2 5 


0.2 10 
0.6 100 


4.5 


150 10 




10 


1 


04 










0.55 0.7* 2 












BC167B 


TO-92 
(74) 


60* 


45 


6 


15* 50 


110 500* 2 5 
240 2 5 


0.2 10 
0.6 - 100 


4.5 


150 10 




10 


1 


04 














0.55 0.7* 2 














BC168 


TO-92 
(74) 




20 


5 


15* 30 


110 2 5 
125 900 * 2 5 


0.2 10 
0.6 100 
0.55 0.70* 2 


4.5 


150 10 




10 


1 


04 


















BC168A 


TO-92 
(74) 




20 


5 


15* 30 


110 2 5 
125 260* 2 5 


0.2 10 
0.6 100 


4.5 


150 10 




10 


1 


04 
















0.55 0.70* 2 














BC168B 


TO-92 
(74) 




20 


5 


15* 30 


110 2 5 
240 500* 2 5 


0.2 10 
0.6 100 
0.55 0.70* 2 


4.5 


150 10 




10 


1 


04 



TEST CONDITIONS: 

(1) l C = 200 (lA, V CE = 5V, f = 1kHz. (2) l c = 100mA, V cc - 20V, lp,1 = l B 2 • 5mA. (3) l c = 200 liA, V CE = 2V, f = 1kHz. (4) l c - 100mA, V cc = 10V, lp,1 = l B 2 = 10mA. (5) l C = 10mA, V cc = 3V, 
l B 1 = | B 2 = imA. (6) l C = 100 uA, V CE = 5V, f = 1kHz. (7) l c = 1mA, V CE = 10V, f = 200kHz. (81 l c = 1mA, V CE - 5V, f = 1kHz. (9) l c = 150mA, V cc = 6V, l B 1 = l B 2 = 15mA. (10) l C = 200 /jA, 
V CE = 5V,f =1kHz. (ID lc = 150mA, V CC = 10V, Ig! = l B 2 = 75mA. (12) l c = 300mA, V cc = 25V, l B 1 = l B 2 = 30mA. (13) l c = 10 uA, V CE = 5V, f ■'WB. (14) l c = 500mA, V cc = 25V, l B 1 = 50mA. 
I B 2 »25mA. (15) l c - 10mA, V BE = 2V, l B ' = 3mA, l B 2 = 1mA. (16) l c = 100mA, l B 1 = 40mA, l B 2 = 20mA. 



S9U8S uojpaig ojd 



Pro Electron Series 



23 


No. 


Case 
Style 


VCES" 
^CBO 

(V) 


v CEO 
(V) 


VebO 

(V) 


Ices* 

'CBO a ^CB 
(nA) IV) 
Max 


HFE 

h fr _ \ n Vr-c 
fe @ C & CE 
1 kHz* tmA) (V) 


V CE(SAT) VHcinNl* lr 


C b 
(pF) 


,T <C 

(MHz) @, C „, 
... ,, (mA) 


*o« 
(nsl 


NF 
(dB) 


Test 
Conditron 


Process 
No. 


Min 


Min 


Min 


Min Max 


Min Max 


Max 


Mm Max 


Max 


Max 


RPIfiRP 


TO-92 
(74) 




20 


5 


1 5* 30 


110 2 5 
450 900* 2 5 


02 10 
0.6 100 
0.55 0.70" 2 


4 5 


1 50 10 




10 




04 


BC169 


TO-92 
(74) 




20 


5 


15* 30 


110 2 5 
240 900* 2 5 


2 10 
0.6 100 
0.55 0.70" 2 


4 5 


1 50 10 




4 




04 


BC169B 


TO-92 
(74) 




20 


5 


1 5* 30 


110 2 5 
240 500* 2 5 


0.2 1 
0.6 100 
0.55 0.70* 2 


4.5 


1 50 10 




4 




04 


tJL I09L. 


(74) 










110 2 5 
450 900* 2 5 


0.2 10 
0.6 100 
0.55 0.70" 2 














BC1 77 


TO-18 


50 


45 


5 


100 20 


110 2 5 
125 500" 2 5 


0.1 o U./o lU 
0.75* 2 
1.0" 100 


4.5 


1 50 10 




10 




71 




TO-1 8 










125 260* 2 5 


U. I O U./O I u 

0.75* 2 
1.0* 100 




1 50 10 




1 




71 




TO-18 


50 


45 




1 00 20 


110 2 5 
240 500* 2 5 


n 1 r n 7R 1 n 

U. ID U./o I U 

0.76* 2 
1.0* 100 


4 5 


1 50 10 




1 




71 


BC177VI 


TO-18 


50 


45 


5 


100 20 


110 2 5 


0.18 0.78 10 


4.5 


150 10 




10 


! 


71 


BC1 78 


TO-18 


30 


25 


5 


100 20 


110 2 5 
125 900* 2 5 


0.18 0.78 10 
0.75* 2 
1.0* 100 


4.5 


1 50 10 




1 




71 


BC178A 


TO 18 


30 


25 


5 


100 20 


110 2 5 
125 260* 2 5 


0.18 0.78 10 
0.75* 2 
1.0* 100 


4.5 


150 10 




10 




71 


BC178B 


TO-18 


30 


25 


5 


100 20 


110 2 5 

240 500* 2 5 


0,18 0.78 10 
0.75* 2 
1.0* 100 


4.5 


150 10 




10 




71 


BC179 


TO-18 


25 


20 


5 


100 20 


110 2 5 
125 900* 2 5 


0.18 0.78 10 
0.75* 2 
1.0* 100 


4.5 


150 10 




4 




71 


BC179A 


TO-18 


25 


20 


5 


100 20 


110 2 5 
125 260* 2 5 


0.18 0.78 10 
0.75* 2 
1.0* 100 


4.5 


150 10 




4 




71 



Type 
No. 


Case 
Style 


VCES* 
v CBO 
(V) 
Min 


v CEO 
(V) 
Min 


VEBO 
(V) 
Min 


'CES* 

'CBO & V CB 
InA) (V) 
Max 


HFE 

h fe a 'C s V CE 
1 kHz- (mA) (V) 
Min Max 


Vot.oat. V BE(SAT) 
C vT' . V BE<°NI' • fe 

Max tVI 

Min Max 


C b 
IpF) 
Max 


(MHz) <B> C 
Min Max lmAI 


'off 
Ins) 
Max 


NF 
(dB) 
Max 


Test 
Condition 


Process 
No. 


BC179B 


TO-18 


25 


20 


5 


100 20 


110 2 5 
240 500' 2 5 


0.18 0.78 10 
0.75* 2 
1.0* 100 


4.5 


150 10 




4 




71 


BC182 


TO-92 
(77] 


60 


50 


5 


15 50 


40 0.01 5 
80 100 5 
125 500- 2 5 


0.6 12 100 
035 10 
0.55 0.70* 2 


5 


150 10 




10 




04 


BC182A 


TO-92 
(77! 


60 


50 


5 


15 50 


40 0.01 5 
80 100 5 
125 260' 2 5 


0.6 1.2 100 
0.25 10 
0.55 0.70" 2 


5 




150 10 




10 




04 




























BC182B 


TO-92 
(77) 


60 


50 


5 


15 50 


40 0.01 5 
80 100 5 
240 500' 2 5 


0.6 1.2 100 
0.25 10 
0.55 0.70* 2 


5 


150 10 




10 




04 


BC182L 


TO 92 
(74) 


60 


50 


5 


15 50 


40 0.01 5 
80 100 5 
125 500* 2 5 


0.6 1.2 100 
0.25 10 
0.55 0.70* 2 


5 




150 10 




10 




04 


























BC182LA 


TO-92 
(74) 


60 


50 


5 


15 50 


40 0.01 5 
80 100 5 
125 260* 2 5 


0.6 1.2 100 
0.25 10 
055 0.70* 2 


5 




150 10 




10 




04 




























BC 1 82 LB 


TO-92 
(74) 


60 


50 


5 


15 50 


40 0.01 5 
80 100 5 
240 500* 2 5 


0.6 1.2 100 
0.26 10 
0.56 0.70* 2 


5 




150 10 




10 




04 




























BC183 


TO-92 
(77) 


45 


30 


5 


15 30 


40 0.01 5 
80 100 5 
125 900* 2 5 


0.6 1.2 100 
0.25 10 
0.55 0.70* 2 


5 




150 10 




10 




04 




























BC183A 


TO-92 
(77) 


45 


30 


5 


15 30 


40 0.01 5 
80 100 5 




0.6 1.2 100 

0.25 10 
0.55 0.70* 2 


5 




150 10 




10 




04 














125 260- 2 5 
















BC183B 


TO-92 
(77) 


45 


30 


5 


15 30 


40 0.01 5 
80 100 5 
240 500* 2 5 


0.6 1.2 100 
0.25 10 
0.55 0.70* 2 


5 


150 10 




10 




04 


























BC183C 


TO-92 
177) 


45 


30 


5 


15 30 


40 0.01 5 
80 100 5 
450 900* 2 5 


0.6 1.2 100 
0.26 10 
0.55 70 * 2 


5 


150 10 




10 




04 





























TEST CONDITIONS: 

(1) l C = 200 uA, V CE = SV, f - 1kHz. (2) l c = 100mA, V C C " 20V, l B 1 " l B 2 = 5mA. (3) l C " 200 M. V CE : - 2V,f = 1kHz. (4) l C » 100mA, V cc = 10V, l B 1 ■ l B 2 = 10mA. (5! I c - 10mA. V cc = 3V. 
I B 1 = | B 2 = lmA . (6) l c = 100 M, V C E = 5V. f = 1kHz. (71 l C ■= 1mA, V CE = 10V, f = 200kHz. (8) l C « 1mA, V CE = 5V, f - 1kHz. (91 l C « 150mA, V cc = 6V, lp,1 = l B 2 = 15mA (10) l c • 200 (iA, 
V CE • 5V, f -1kHz. (11) l C = 150mA, V C C ' 10V, l B ' - l B 2« 75mA. (12) l C - 300mA, V cc = 25V. Ifjl = l B 2» 30mA. (13) l C - 10»iA, V CE = 5V, f ■= WB (14) l c - 500mA, V CC = 25V, l B ' =50mA, 
l B 2 = 25mA. (15) l c - 10mA, V BE - 2V, l B 1 = 3mA, l B 2 = 1mA. (16) l C - 100mA, l B 1 = 40mA, l B 2 ■ 20mA. 



sauas uojpaig oj<j 



Pro Electron Series 



S3 



Type 
No. 


Case 
Style 


V C ES* 
v CBO 
(VI 
Min 


v CEO 
(VI 
Min 


VebO 

(V) 
Min 


'CES* 
'CBO s 
(nAI 
Mas 


VCB 

(V) 


1 

Min 


HFE 

h fe ff 
kHz* 
Mas 


, 'c R 

(mA) 


V C E 
(V) 


VCEISATI 

IV) 

Mas 


V BE(SATI 
. V B E(ONI* e 
(V) 

Min Max 


'c 

(mAI 


<-ob 

ipt-J 

Max 


«T 
(MHzl 
Min Mas 


(mAI 


'off 
(ns) 
Mas 


NF 
(dB) 
Max 


Test 
Condition 


Process 
No. 


BC183L 


TO-92 
(74) 


45 


30 


5 


15 


30 


40 
80 
125 


900' 


0.01 
100 
2 


5 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


100 
10 

2 


5 


150 


10 




10 


1 


04 






























BC183LA 


TO-92 
(74) 


45 


30 


5 


15 


30 


40 
80 
125 


260' 


0.01 
100 

2 


5 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


100 

10 

2 


5 


150 


10 




10 




04 






























BC183LB 


TO-92 
(74) 


45 


30 


5 


1 5 


30 


40 
80 
240 


500* 


0.01 
100 
2 


5 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


100 

10 

2 


5 


150 


10 




10 




































BC183LC 


TO-92 
(74) 


45 


30 


5 


15 


30 


40 
80 
450 


900* 


0.01 
100 
2 


5 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


100 

10 

2 


5 


150 


10 




10 




04 






























BC184 


TO-92 
1771 


45 


30 


50 


15 


30 


100 
130 
240 


900* 


0.01 
100 
2 


5 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


100 
10 


5 


150 


10 




4 




04 


















2 
















BC184B 


TO-92 
(77) 


45 


30 


50 


15 


30 


100 
130 
240 


500* 


0.01 
100 
2 


5 
5 
5 


0.6 
0.25 


0.55 




1.2 

0.70* 


100 
10 

2 


5 


150 


10 




4 


1 


04 
































BC184C 


TO-92 
(77) 


45 


30 


50 


15 


30 


100 
130 
450 


900* 


0.01 
100 

2 


5 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


100 

10 

2 


5 


150 


10 




4 




04 


































BC184L 


TO-92 
(74) 


45 


30 


50 


15 


30 


100 
130 
240 




900* 


0.01 
100 

2 


5 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


100 

10 

2 


5 


150 


10 




4 




04 


































R f 1 ft A I R 


TO-92 
(74) 


45 


30 


50 


15 


30 


100 
130 
240 


500* 


01 
100 
2 


■ 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


1 00 
10 

2 


g 


150 


10 




4 




04 


BC184LC 


TO-92 
(741 


45 


30 


50 


15 


30 


100 
130 
450 


900* 


0.01 
100 
2 


5 
5 
5 


0.6 
0.25 


0.55 


1.2 
0.70* 


100 
10 

2 


5 


150 


10 




4 




04 




























BC212 


TO-92 
(77) 


60 


50 


5 


15 


30 


60 


400* 


2 


5 


0.6 
0.25 


0.6 


1.1 

0.72* 


100 

10 

2 


10 


200 


10 




10 




63 






























BC212A 


TO-92 
(77) 


60 


50 


5 


15 


30 


100 


300* 


2 


5 


0.6 
0.25 


0.6 


1.1 

0.72* 


100 
10 

2 


10 


200 10 




10 




63 


BC212B 


TO-92 
(77) 


60 


50 














0.6 

0.25 




1.1 

0.72' 


100 
10 

2 


10 


200 


10 




10 




63 


5 


15 


30 


200 


400* 


0.01 
100 
2 


5 


0.6 









Case 


VCES* 
"CBO 


v CEO 
(V) 


v EBO 
(VI 


'CES* 
'CBO a 


V C B 




H F E 

h fe a 'C „. 


VCE 


V CE(SAT) 
IV) 
Max 


V BE(SAT) 
». v BE(ONl" a 


'c 


"on 
(pF) 
Max 


f-r 
(MHz) 
Min Max 


Ir 

a c 


l ott 
(nsl 
Max 


NF 
IdBI 
Max 


Test 


Process 


No. 


Style 


(V) 
Min 


Min 


Min 


(nAI 
Max 


(V) 


1 kHz* 
Min Max 


ImAI 


IV) 


Min 


(V) 

Max 


(mAI 


" (mAI 


Condition 


No 


BC212L 


TO-92 
(74! 


60 


50 


5 


15 


30 


40 
60 


300 


0.01 
2 


5 
5 


0.6 
0.25 




1.1 


100 
10 


10 


200 


10 




10 




63 














60* 




2 


5 




0.6 


0.72* 


2 
















BC212LA 


TO-92 
(74) 


60 


50 


5 


15 


30 


40 
60 
100 


300* 


0.01 

2 

2 


5 
5 
5 


0.6 
0.25 


0.6 


1.1 

0.72* 


100 
10 

2 


10 


200 


10 




10 


— ; ' 


63 


BC212LB 


TO-92 
(74) 


60 


50 


5 


15 


30 


40 
60 
200 


400* 


0.01 

2 

2 


5 
5 
5 


0.6 
J 


0.6 


1.1 

0.72* 


100 
10 

2 


10 


200 


10 




10 


i 


63 


BC213 


TO-92 
(77) 


45 


30 


5 


15 


30 


40 
60 
80 




0.01 

2 

2 ' 


5 
5 

5 


0.6 
0.25 




1.1 

0.72* 


100 
10 

2 


10 


200 


10 




10 




63 


600* 


0.6 






BC213A 


TO-92 


45 


30 


5 


15 


30 


40 




0.01 


5 


0.6 




1.1 


100 


10 


200 


10 




10 


j 


63 




(77) 












60 
100 




2 
2 


5 
5 


0.25 






10 

2 




























300* 


0.6 


0.72* 
















BC213B 


TO-92 
(77) 


45 


30 


5 


15 


30 


40 
60 




0.01 
2 


5 
5 


0.6 
0.25 




1.1 


100 
10 


10 


200 


10 




10 




63 
















200 


400* 


2 


5 




0.6 


0.72* 


2 












































BC213C 


TO-92 
(77) 


45 


30 


5 


15 


30 


40 
60 




0.01 

2 


5 
5 


0.6 
0.25 




1.1 


100 
10 


10 


200 


10 




10 




63 
















350 


600* 


2 


5 




0.6 


0.72* 


2 












































BC213L 


TO-92 
(74) 


45 


30 


5 


15 


30 


40 
80 


400 


0.01 
2 


5 
5 


0.6 
0.25 




1.1 


100 
10 


10 


200 


10 




10 




63 
















80* 




2 


5 




0.6 


0.72* 


2 














































BC213LA 


TO-92 
(74) 


45 


30 


5 


15 


30 


40 
80 




0.01 
2 


5 
5 


0.6 
0.25 




1.1 


100 
10 


10 


200 


10 




10 




63 
















100 


300* 


2 


5 




0.6 


0.72* 


2 
















































BC213LB 


TO-92 
(74) 


45 


30 


5 


15 


30 


40 
80 




0.01 

2 


5 
5 


0.6 
025 




1.1 


100 
10 


10 


200 


10 




10 




63 
















200 


400* 


2 


5 




0.6 


0.72* 


2 















































TEST CONDITIONS: 

(II l c = 200 mA, V CE = 5V, f = 1kHz. (2) lc - 100mA, V cc = 20V, Ip, 1 = l B 2 = 5mA. (31 l c = 200 nA, V CE - 2V, f - 1kHz. (41 l c = 100mA, V c c = 10V, l B 1 - lp,2 ; 10mA. (5) l c = 10mA, V cc f 3V, 
l B 1 = l B 2 = 1mA. (6) l C = 100 mA, V CE = 5V, f = 1kHz. (7) l c = 1mA, V CE = 10V, f = 200kHz. (81 l C = 1mA, V CE = 5V, f = 1kHz. (9) l c = 150mA, V cc f 6V, lp,1 - lp,2 = 15mA. (10rl C - 200 mA, 
VCE = 5V,f =1kHz. (Ill l c = 150mA, V cc - 10V, l g 1 = l B 2»75mA. 112) l c = 300mA, V cc = 25V, l B 1 = l B 2 = 30mA. (131 l c = 10 (iA, V CE = 5V, f = WB. (14) l c = 500mA, V cc = 25V, l B 1 =50mA, 
l B 2 = 25mA. (15) l c = 10mA, V BE - 2V, l B 1 = 3mA, l B 2 = 1mA. 116) l C = 100mA, l B ' > 40mA, l B 2 = 20mA. 




sauas uoipa|3 ojd 



Pro Electron Series 



Type 
No. 


Case 
Style 


VCES' 
VcBO 
(V) 
Min 


v CEO 
(V) 
Min 


v EBO 
(V) 
Min 


!CES* 

'CBO o ^CB 
(nAI (V) 
Max 


h F e 

hf e ,, In - Vrc 
1 kHz* (mAI (V) 
Min Max 


,H„ .. , . V BE(SAT) 

C V£ 1 „ v BE<ON)* a 'c 
(VI a beion. „ ^ 

Min Max 


Cob 
(pFI 
Max 


f T 

lr 

(MHz) 8 , 
... ,, (mA) 
Mm Max 


off 
(ns) 
Max 


NF 
(dB) 
Max 


Test 
Condition 


Process 
No. 


BC213LC 


TO -92 
(74) 


45 


30 


5 


15 30 


40 0.01 5 
80 2 5 
350 600 * 2 5 


0.6 1.1 100 
0.25 10 
0.6 0.72* 2 


10 


200 10 




10 


1 


63 




























BC214 


TO-92 
(77) 


45 


30 


5 


15 30 




40 0.01 5 

80 2 5 

140 600* 2 5 


0.6 1.1 100 
0.25 10 
0.6 0.72* 2 


10 


200 10 




2 


1 


63 


























BC214A 


TO-92 
(77) 


45 


30 


5 


15 30 


40 0.01 5 
80 2 5 
100 300* 2 5 




0.6 1.1 100 
0.25 10 
0.6 0.72* 2 


10 


200 10 




2 


1 


63 


























BC214B 


TO-92 
(77) 


45 


30 


■ 


15 30 


do n m r 

HKJ U.U I O 

80 2 5 
200 400* 2 5 


n ft 11 1 nn 
0.25 10 
0.6 0.72* 2 


1 


200 1 




2 




63 


























BC214C 


TO-92 
(77) 


45 


30 


5 


15 30 


40 0.01 5 
80 2 5 
350 600* 2 5 


0.6 1.1 100 
0.25 10 
0.6 0.72* 2 


10 


200 10 




2 


1 


63 


























BC214L 


TO-92 
(74) 


46 


30 


5 


15 30 


100 0.01 5 
140 400 2 5 
120 100 5 
140* 2 5 


0.6 1.1 100 
0.25 10 
0.6 0.72* 2 


10 


200 10 




2 


1 


63 


























BC214LB 


TO-92 
(74) 


45 


30 


5 


15 30 


100 0.01 5 
140 2 5 
120 100 5 
200 400 * 2 5 


0.6 1.1 100 
0.25 10 
0.6 0.72* 2 


10 


200 10 




2 


1 


63 
























BC214LC 


TO-92 
(74) 


45 


30 


5 


15 30 


100 0.01 5 
140 2 5 
120 100 5 
350 600* 2 5 


0.6 1.1 100 
25 10 
0.6 0.72 * 2 


10 


200 10 




2 


1 


63 




























BC237-92 


TO-92 
(77) 


50 


45 


6 


50 20 


100 0.01 5 
140 2 5 
120 100 5 


0.25 0.77* 10 
0.6 100 


4.5 






10 


1 


04 








125 500* 2 5 


0.55 0.70* 2 








BC237A-92 


TO-92 
(77) 


50 


45 


6 


50 20 


100 0.01 5 
140 2 5 


0.25 0.77* 10 
0.6 100 


4.5 






10 


1 


04 














120 100 5 
125 500* 2 5 


0.55 0.70* 2 














BC237B-92 


TO-92 

(77) 


50 


45 


6 


50 20 


100 0.01 5 
140 2 5 


0.25 0.77* 10 
0.6 100 


4.5 






10 


1 


04 








120 100 5 
240 500* 2 5 


0.55 0.70* 2 













Type 

No. 


Case 
Style 


VCES* 


v CEO 
(V) 
Min 


v EBO 
(V) 
Min 


ices* 


VCB 
(V) 




Hfe 




V CE 

(V) 


VCE(SAT) 
(V) 
Max 


V BE(SATI 




C b 
(pF) 
Max 


f-r 


•off 

(nil 
Max 


NF 


Test 
Condition 


Process 
No. 


v CBO 
IV) 
Min 


'CBO . 

(nA) 

Max 


1 

Min 


hfe , 
kHz* 
Max 


1 ' c & 
(mAI 


& V BE (ONI* @ 
(VI 

Min Max 


'c 

(mAI 


(MHzl 
Min Max 


» 'c 

" (mA) 


IdB) 
Max 


BC238-92 


TO-92 
(771 


30 


20 


5 


50 


20 


100 




0.01 


5 


0.25 




0.77* 


10 


4.5 






10 


1 


04 






140 
120 
125 


900* 


2 

100 

2 


5 
5 
5 




0.55 


0.6 
0.70* 


100 

2 






BC238A-92 


TO-92 


30 


20 


5 


50 


20 


100 




0.01 


5 


0.25 




0.77* 


10 


4.5 








10 


1 


04 


(771 




140 
120 
125 


260* 


2 

100 

2 


5 
5 
5 




0.55 


0.6 
0.70* 


100 

2, t 










BC238B-92 


TO-92 
(77) 


30 


20 


5 


50 


20 


100 




0.01 


5 


0.25 




0.77* 


10 


4.5 






10 


1 


04 






140 
120 
240 


500* 


2 

100 

2 


5 
5 
5 




0.55 


0.6 
0.70" 


100 

2 




BC238C-92 


TO-92 


30 


20 


5 


50 


20 


100 




0.01 


5 


0.25 




0.77* 


10 


4.5 






10 


1 


04 




(77) 








140 
1 20 
450 


900* 


2 

100 

2 


5 
5 
5 




0.55 


0.6 
0.70* 


100 
2 










BC239-92 


TO-92 
(771 


30 


20 


5 


50 


20 


100 




0.01 
2 

100 

2 


5 
5 
5 
5 


0.25 


0.55 


0.77* 


10 


4.5 






4 


1 


04 










140 
120 
240 


900* 


0.6 
0.70 


100 
2 


BC239B-92 


TO-92 


30 


20 


5 


50 


20 


100 




0.01 


5 


0.25 




0.77" 


10 


4.5 








4 


1 


04 




(77) 




140 
120 
240 


500* 


2 

100 
2 


5 
5 
5 




0.55 


0.6 
0.70 


100 

2 






BC239C-92 


TO-92 


30 


20 


5 


50 


20 


100 




0.01 


5 


0.25 




0.77* 


10 
100 

2 


4.5 








4 


1 


04 


(77) 










140 




2 

100 

2 


5 
5 
5 




0.55 


0.6 
0.70 






BC261A 


TO- 18 




45 




50 


45 


100 




0.01 


5 


0.25 




0.9 


10 


4.5 






6 


3 


71 
















140 




2 


5 


0.6 






100 






























120 




100 


5 






































125 


260* 


2 


5 

























TEST CONDITIONS: 

(1) l C = 200 |iA, V CE = 5V, f = 1kHz. (2) l c = 100mA, V cc = 20V, l B ' = l B 2 = 5mA. (31 l c = 200 mA, V ce » 2V, f"= 1kHz. (4) l c = 100mA, V cc = 10V, l B 1 = l B 2 = 10mA. (5) l c = 10mA, V cc - 3V, 
l B 1 = l B 2 = 1mA. (6) l c = 100 mA, V CE = 5V, f = 1kHz. (7) l c = 1mA, V CE = 10V, f = 200kHz. (8) l C = 1mA, V CE = 5V,f = 1kHz. (91 l c = 150mA, V cc = 6V, l B 1 = l B 2= 15mA. (101 l c = 200 mA, 
VCE " 5V,f =1kHz. (11) l c = 150mA, V cc = 10V, l B ' = l B 2 = 75mA. (12) l C = 300mA, V cc = 25V, l B 1 = l B 2 = 30mA. (13) l c = 10/xA, V CE = 5V, f » WB. (14) l c = 500mA, V cc = 25V, l B ' =50mA, 
l B 2 - 25mA. 115) I C = 10mA, V BE = 2V, l B 1 = 3mA, l B 2 = 1mA. (16) l c = 100mA, l B 1 - 40mA, l B 2 = 20mA. 



S9U9S UOjp9|3 OJd 



Pro Electro 



2 








































Type 
No. 


Style 


VCES* 
v CBO 
(VI 
Min 


v CEO 
(V) 
Min 


v EBO 

(VI 
Min 


ices" 

'CBO s 

InA) 

Max 


V C B 

(VI 


1 kHz" 
Min Max 


' C 8. 
(mAI 


V CE 
(VI 


V CE(SAT) 
(V) 
Max 


V BE(SAT) 
& v BEIONI* a 
(V) 

Min Max 


'c 

(mAI 


c ob 
(pF) 
Max 


(MHz) @ . C Ak 
Mm Max 


•off 
(nsl 
Max 


NF 
IdBI 
Max 


Ti 

Co nd 


BC261B 


TO-18 




45 




50 


45 


100 




0.01 


5 


0.25 


0.9 


10 








6 


3 














140 
120 
240 


500* 


2 

100 
2 


5 
5 
5 


0.6 




100 




BC262A 


TO-18 




20 


5 


50 


20 


100 




0.01 


5 


0.25 


0.9 


10 








6 


3 










140 
120 
125 


260* 


2 

100 

2 


5 

5 
5 


0.6 




100 




BC262B 


TO-18 




20 


5 


50 


20 


100 




0.01 


5 


0.25 


0.9 


10 








6 


3 












140 
120 
240 


500* 


100 
2 


5 
5 
5 


0.6 




100 


BC263A 


TO-18 




20 


5 


50 


20 


100 




0.01 


5 


0.25 


0.9 


10 








2.5 


3 












140 

120 
125 


260* 


2 

100 

2 


5 
5 
5 


0.6 




100 








8C263B 


TO-18 




20 


5 


60 


20 


100 




0.01 


5 


0.25 


0.9 


10 








2.5 


3 






140 

120 
240 


500* 


2 

100 
2 


5 
5 
5 


0.6 




100 






BC307-92 


TO-92 


50 


45 


5 


100 


20 


100 




0.01 


5 


0.18 


0.78 


10 








10 


1 




I77I 










140 
120 

75 


500' 


2 

100 
2 


5 
5 
5 




1 rv 
0.75* 


2 


BC307A-92 


TO-92 


50 


45 


5 


100 


20 


100 




0.01 


5 


0.18 


0.78 


10 








10 


1 


(77) 










140 

120 
125 


260* 


2 

100 

2 


5 
5 
5 




1 .0* 
0.75* 


100 
2 


BC307B-92 


TO-92 
(77! 


50 


45 


5 


100 


20 


100 




0.01 


5 


0.18 


0.78 


10 








10 


1 




140 
120 




2 


5 




1.0" 


100 




BC308-92 


TO-92 
(77) 


30 


25 


5 


100 


20 


100 




0.01 


5 


0.18 


0.78 


10 








10 


1 






140 

120 
125 


900* 


2 

100 

2 


5 
5 
5 




1.0* 
0.75* 


100 

2 




BC308A-92 


TO-92 


30 


25 


5 


100 


20 


100 




0.01 


5 


0.18 


0.78 


10 








10 


1 




(77! 












140 




2 


5 




1.0* 


100 


























120 




100 


5 
































125 


260* 


2 


5 




0.75* 


2 

















vces' 

v CBO 
(V) 
Min 


VcEO 
(V) 
Min 


VebO 
(V) 
Min 


'CES* 


VCB 

IV) 




HFE 


(mA) 


V C E 

(V) 


VCE(SAT) 


V BE(SATI 




c ob 




"off 


NF 


Test 
Condition 


Type 

No. 


Case 
Style 


ICBO g 
InA) 

Max 


"fe 
1 kHz' 

Min Max 


IV) 
Max 


g, v BEIONI* e 
& IV) @ 
Min Max 


1 ' A) 


<pF> 
Max 


,MHZ| ®lmAI 
Min Max ,mAI 


Int) 
Max 


IdB) 
Max 








































BC308B-92 


TO-92 
(77) 


30 


25 


5 


100 


20 


100 
140 


400 


0.01 

2 - 


5 
5 


0.18 




0.78 
1.0* 


10 
100 

2 








10 


1 
















120 

240 


500* 


100 
2 


5 
5 






0.75* 












BC308C-92 


TO-92 
(77) 


30 


25 


5 


100 


20 


100 
140 


400 


0.01 
7 


5 
5 


0.18 




0.78 
1.0* 


10 
100 








10 


1 














120 
450 


900* 


100 

2 


5 
5 






0.75* 


2 












— 


TO-92 
(77) 


25 


20 


g 


100 


20 


100 
140 


400 


0.01 

IP 


5 
5 


0.18 




0.78 
1.0 


10 
100 








4 


1 
















120 
125 


900* 


100 
2 


5 
5 






0.75 


2 












BC309B-92 


TO-92 
(77) 


25 


20 


5 


100 


20 


100 
140 
120 
240 




0.01 
2 

100 
2 


5 
5 
5 
5 


0.18 




0.78 
1.0 


10 
100 








4 


1 


1 














500* 






0.75 


2 












BC309C-92 


TO-92 
(77) 


25 


20 


5 


100 


20 


100 
140 
120 


400 


0.01 

2 

100 


5 
5 
5 




0.8 




0.78 
1.0 


10 
100 








4 


1 
















450 


900- 


2 


5 






0.75* 


2 












BC317 


TO-92 
(72) 


50 


45 


6 


30 


20 


110 
125 


450 
500* 


2 
2 


5 
5 


0.2 
0.5 




0.77* 


10 
100 


4 






6 


1 


















0.57 


0.72* 


2 












BC317A 


TO-92 
(72) 


50 


45 


6 


30 


20 


110 

125 


220 
2R0* 


2 

2 


5 
5 


0.2 
0.5 




0.77* 


10 
100 


4 






6 


1 


















0.57 


0.72* 


2 












BC317B 


TO-92 
(72) 


50 


45 


6 


30 


20 


200 
240 


450 
500* 


2 

2 


5 
5 


0.2 
0.5 




0.77* 


10 
100 


4 






6 


1 




















0.57 


0.72* 


2 












BC318 


TO-92 
(72) 


30 


20 


5 


30 


20 


110 
125 


800 
900* 


2 

2 


5 
5 


0.2 
0.5 




0.77* 


10 
100 


4 






6 


1 


















0.57 


0.72* 


2 












BC318A 


TO-92 
(72) 


30 


20 


5 


30 


20 


110 


220 
2Kfl* 


2 
2 


5 
R 


0.2 
0.5 




0.77* 


10 
100 


4 






6 


1 


















0.57 


0.72* 


2 













TEST CONDITIONS: 

(1) l C = 200 |uA, V CE = 5V. f - 1kHz. (2) l c = 100mA, V cc = 20V, l B ' - In? = 5mA. (3) l C • 200 (iA, V CE = 2V, f = 1kHz. (41 l c = 100mA, V CC - 10V. Ie 1 = l B 2 - 10mA. (5) l c = 10mA, V cc 
l B 1 . | B 2 - 1mA. (6) l c - 100 mA, V CE = 5V. f = 1kHz. 17) l c - 1mA, V CE - 10V, f = 200kHz. (8) l C = 1mA, V CE - 6V. f - 1kHz. (9) l C = 150mA, V cc = 6V, Ig' - l B 2= 15mA. (10) l c = 2 
V CE = 5V,f -1kHz. (11) l c = 150mA, V cc - 10V, l B 1 - l B 2 = 75mA. (12) l c - 300mA, V cc = 25V, l B 1 - l B 2 = 30mA. (13) l c - 10M, V CE = 5V, f = WB. 114) l C = 500mA, V cc = 25V, Is 1 - 
l B 2 = 25mA. (15) l c = 10mA, V BE = 2V. I B 1 = 3mA, l B 2 - 1mA. (16) l c = 100mA, Ib 1 = 40mA, l B 2 = 20mA. 



saues uojpdj 



Pro Electron Series 



2 



Type 
No. 


Case 
Style 


VCES* 
VcBO 
(VI 
Min 


V C EO 
(V) 


v EBO 
(V) 


'CES* 
'CBO g 

InAI 


V C B 
IV) 


HFE 

h «e a 
1 IiHi- 


' C & 
ImAI 


»CE 
(V) 


V CE(SAT) 
(V) 


V BE(SAT) 
& Vbe(ON)' e 
(V) 


'c 

ImA) 


c ob 
(pF) 


T lr 
(MHz) ©,**. 
»>- u (mA) 


'off 
(ns) 


NF 

IdB) 


Test 
Condition 


Process 
No. 






Min 


Min 


Max 


Min 


Max 






Max 


Min Max 


Max 


Mm Max 


Max 


Max 


BC318B 


TO-29 
172) 


30 


20 


5 


30 


20 


200 

94n 


450 
5nn- 


2 

2 


5 
■ 


0.2 
0.5 


0.77* 


10 
100 


4 






6 


1 


04 




















R7 fl 77* 


2 














BC318C 


TO -92 


30 


20 


5 


30 


20 


100 




0.01 


5 


0.2 


0.77* 


10 


4 






6 


1 


04 


(72) 












450 


800 


2 


5 


5 




100 




























450 


900* 


2 


5 


0.57 0.72* 


2 














BC319 


(72) 




20 


5 


30 


20 


40 
200 


800 


0.01 
2 


5 
5 


0.2 
0.5 


0.77* 


100 












04 














240 


900 * 


2 


5 




0.57 0.72* 


2 














BC319B 


TO-92 


30 


20 


5 


30 


20 


200 


450 


2 


g 


0.2 


0.77* 


10 


4 






4 


1 


04 




(72) 












240 


500* 


2 


5 


0.5 




100 
































0.57 0.72* 


2 














BC319C 


TO-92 


30 


20 


5 


30 


20 


100 




0.01 


5 


0.2 


0.77* 


10 


4 






4 




04 




(72) 












420 


800 


2 


5 


0.5 




100 


























450 


900 # 


2 


5 




0.57 0.72* 


2 














BC327 


TO-92 
(77) 


sot 


45 


5 


100* 


45 


40 
100 


600 


300 
100 




0.7 


12* 


500 
300 


4 






4 


1 


67 


BC327-10 


TO-92 
(77) 


50* 


45 


5 


100* 


45 


40 

63 




300 
100 




0.7 




500 
300 


4 






4 


1 


67 


160 




1.2* 








BC327-16 


TO-92 


60* 


45 


5 


100* 


45 


40 




300 




0.7 




500 


4 






4 


1 


67 




(77) 












100 


250 


100 






1.2* 


300 














BC327-25 


TO-92 
(77) 


50* 


45 


5 


100* 


45 


40 

160 


400 


300 
100 




0.7 


1.2* 


500 
300 


4 






4 


1 


67 


BC328 


TO-92 
(77) 


30* 


25 


5 


100* 


25 


40 
100 


600 


300 
100 




0.7 


1.2 


500 
300 


4 






4 


1 


67 


BC328-10 


TO-92 
(77) 


30* 


25 


5 


100* 


25 


40 

63 


160 


300 
100 




0.7 


1.2 


500 
300 


4 






4 




67 


BC328-16 


TO-92 
177) 


30* 


25 


5 


100* 


25 


40 
100 


250 


300 
100 




0.7 


1.2 


500 
300 


4 






4 




67 


BC328-25 


TO-92 
(77) 


30* 


25 


5 


100* 


25 


40 
160 


400 


300 
100 




0.7 


1.2 


500 
300 


4 






4 




67 


BC337 


TO-92 


50* 


45 


5 


100* 


45 


40 




300 




0.7 




500 


4 






4 




14 




(77) 












100 


600 


100 






1.2* 


300 










































8C377-10 


TO-92 
(77) 


50* 


45 


5 


100* 


45 


40 

63 


160 


300 
100 




0.7 


1.2* 


500 
300 


4 






4 




14 


BC337 16 


TO-92 
(77) 


50* 


45 


5 


100* 


45 


40 




300 




0.7 




500 
300 


4 






4 




14 












100 


250 


100 






1.2* 














BC337-25 


TO-92 
(771 


50* 


45 


5 


100* 


45 


40 
160 


400 


300 
100 




0.7 


1.2* 


500 
300 


4 






4 




14 











































s 









VCEO 
(VI 
Min 


v EBO 
IV) 
Mm 


I/-CC* 

'CeS 




"FE 


V CEISATI 
(VI 
Max 


V BE(SATI 




C b 
IpFI 
ax 




•off 
Ins) 
ax 


NF 






Type 
No. 


Case 
Style 


VcBO 
(V) 
Min 


'CBO s 

(nA) 

Max 


VCB 

(V) 


h fa (§ 
1 kHz* 

Min Max 


(mA) 


V CE 
(V) 


& VbEIONI* e 
(VI 

Min Max 


ImA) 


(MHz) »,\. 
Min Max <mA1 


(dB) 
ax 


Test 
Condition 


Process 
No. 


BC338 


TO-92 
(77! 


30 t 


25 


5 

— 


100* 


25 


40 
100 


600 


300 
100 


1 


0.7 




1.2' 


500 
300 


4 






4 


1 


14 


BC338-10 


TO-92 


30 f 


25 




100* 


25 


40 




300 


1 


0.7 






500 


4 






4 


j— ; 


14 




(77) 












63 


160 


100 


1 






1.2* 


300 














BC338-16 


TO-92 
(77) 


30 + 


25 


5 


100 T 


25 


40 
100 


250 


300 
100 


1 
1 


7 





1.2* 


500 
300 


4 






4 




14 


BC338-25 


TO-92 
(77) 


30* 


25 


5 


100+ 


25 


40 

160 


400 


300 
100 


1 

1 


0.7 




1 2* 


500 
300 


4 






4 


1 


14 


BC485 


TO-92 


45 


45 


5 


100 


30 


15 




1A 


5 


0.5 




1.2 


500 


4 






4 




14 


(77) 










40 

60 


400 


10 
100 


2 
2 






.12* 


300 












BC48SA 


TO-92 


45 


45 


5 


100 


30 


15 




1A 


5 


0.5 




1.2 


500 


4 






4 




14 




(77) 












40 

100 


250 


10 
100 


2 

2 






1 .2* 


300 












BC485B 


TO-92 


45 


45 


5 


100 


30 


15 




1A 


5 


0.5 




1.2 


500 


4 






4 




14 




(77) 












40 

160 


400 


10 






















BC485L 


TO-92 


45 


45 


5 


100 


30 


15 




1A 


5 


0.5 




1.2 


500 


4 






4 




14 


(77) 








40 

60 


150 


10 
100 


2 

2 






1.2* 


300 












BC547 


TO-92 


50 


45 


6 


10 


20 




0.25 




0.77* 


10 


4.5 






10 




04 


(77) 












125 


500* 


2 


5 


0.6 


0.55 


0.70* 


100 
2 














BC547A 


TO-92 


50 


45 


6 


10 


20 










0.25 




0.77* 


10 


4.5 






10 




04 




(77) 












125 


260* 


2 


5 


0.6 


0.55 


0.70* 


100 

2 












BC547B 


TO-92 


50 


45 


6 


10 


20 




0.25 




0.77* 
0.70* 


10 


4.5 






10 




04 




(77) 












240 


500* 


2 


5 


0.6 


0.55 


100 

2 












BC547C 


TO-92 


50 


45 


6 


10 


20 










0.25 




0.77* 


10 


4.5 






10 




04 


(77) 








450 


900* 


2 


5 


0.6 


0.55 


0.70* 


100 
2 











TEST CONDITIONS: 

(1) l c = 200 >iA. V CE = 5V. f » 1kHz. (2) lc = 100mA, Vcc " 20V, l B 1 " l B 2 = 6mA - (31 >C = 200 yA, Vgg = 2V, f = 1kHz. (4) l c = 100mA, V c c = 10V, l B 1 « l B 2 = 10mA. (5) l c = 10mA, V cc = 3V, 
l B 1 = | g 2 = lmA . (6) l c = 100 |iA, V CE = 5V, f =■ 1kHz (7) l C - 1mA, V CE =■ 10V, f = 200kHz. (8) l C = 1mA, V CE = 5V, f = 1kHz. (9) l c = 150mA, V CC = 6V, Ib 1 <■ l B 2 = 15mA. (10) l c = 200 mA, 
V CE - 5V.f =1kHz. (11) l c = 150mA, V CC • 10V, Ig1 = l B 2 = 75mA. (12) l C = 300mA, V cc = 25V, l g 1 - l B 2 = 30mA. (13) l C = 10 mA, V CE - 5V, f = WB. (14) l C = 500mA, V cc - 25V, Ig1 = 50mA, 
l B 2 = 25mA. (151 l C = 10mA, V BE = 2V, Ig1 = 3mA, l B 2 - 1mA. (16) l C = 100mA, l B 1 = 40mA, l B 2 ■ 20mA. 



S9U9S UOJJ09I3 OJd 



Pro Electron Series 



3 



Type 
No. 



Case 
Style 



V CES* 
VCBO 
IV) 
Min 



VCEO 
IV) 
Min 



VEBO 

(V) 
Min 



'CES 
'CBO | 
InA) 
Max 



V C B 

IV) 



"fe 9 'C & VCE 
1 kHz* ImA) IV) 
Min Max 



VCEISAT) 
(V) 
Max 



VBEISAT) 
„, v BEION>' 
IV) 



ic 

ImA) 



Min 



Max 



Cob 
IpF) 
Max 



(MHz) & C A , 
... ., ImA) 
Mm Max 



•off 



NF 
IdB) 
Max 



Test 
Condition 



Process 
No. 



BC548 



TO-92 
(771 



30 



20 



0.25 
0.6 



900 " 2 



0.77" 
0.70* 



10 

100 

2 



4.5 



10 



TO-92 
(77) 



0.25 
0.6 



260" 2 



0.77* 
0.70* 



10 

100 

2 



TO-92 
(77) 



20 



0.25 
0.6 



500* 2 



0.77* 
0.70* 



10 
100 

2 



04 



BC548C 



TO-92 

(77) 



0.25 
0.6 



0.77* 
0.70* 



10 

100 

2 



TO-92 
(77) 



0.25 
0.6 



900 * 2 



0.77* 
0.70 



10 
100 

2 



TO-92 
(771 



0.25 
0.6 



240 



500* 2 



0.77* 
0.70 



10 

100 

2 



BC549C 



BC550 



TO-92 

(77) 



900* 2 



0.77* 
0.70 



10 
100 
2 



TO-92 
(77) 



0.25 
0.6 



900* 2 



0.77* 
0.70 



10 
100 

2 



BC550B 



TO-92 
(77) 



0.25 
0.6 



240 



500" 2 



0.77* 
0.70 



10 

100 

2 



TO-92 
(77) 



0.25 
0.6 



900 * 2 



0.77* 
0.70 



10 
100 

2 



TO-92 
(77) 



0.3 
0.65 



260* 2 



0.6 



0.82* 
0.75* 



10 

100 

2 



TO-92 
(77) 



0.3 
0.65 



260" 2 



0.82* 
0.75* 



10 
100 

2 



TO-92 
(77) 



0.3 
0.65 



500* 2 



0.82* 
0.75* 



10 
100 

2 



Type 
No. 


Case 
Style 


V CES* 
v CBO 
(V) 


v CEO 
(V) 


VebO 
(V) 


'CES" 

'CBO g, V CB 
InA) (V) 


Hfe 

hfe @ 'C & V CE 
1 kHz* ImA) (V) 


VmsA-n V BE(SATI 

(VI 8, V "E<ON|- « 'C 


c ob 
(pFI 


' T >C 

(MHz) @ L 
„ ImA) 


•off 
(ns) 


NF 
IdB) 


Tes 
Condi! 






Min 


Min 


Min Max 


Max tV ' lmA ' 
Min Max 


Max 


Mm Max 


Max 


Max 


BC558 


TO-92 
(771 


30 


25 


5 


100 20 




0.3 0.82* 10 
0.65 100 
n fi n 9 

u.o u./o z 








10 


1 












/ o ouu z o 












BC558A 


TO-92 
(77) 


30 


25 


5 


100 20 




0.3 0.82* 10 
0.65 100 
0.6 0.75 2 








10 


\ 












19*1 9fin» 9 R 












BC558B 


TO-92 
(77) 


30 


25 


5 


100 20 




0.3 0.82* 10 
0.65 100 
n fi n 7fi 9 

U.O U . / 3 Z 








10 














9an Rnn* 9 «•; 
ZHU ouu z o 












BC558C 


TO-92 
(77) 


30 


25 


5 


100 20 




0.3 0.82' 10 
0.65 100 

u .0 u . / *j z 








10 


! 












AKr\ qnn* 9 R 












BC559 


TO 92 
(77) 


25 


20 


5 


100 20 


1 


0.3 0.82* 10 
0.65 100 








4 


1 














19R Rnn» 9 r 


0.6 0.75* 2 












BC559A 


TO-92 
(77) 


25 


20 


5 


100 20 




0.3 0.82- 10 
0.65 100 
0.6 0.75* 2 








4 


1 












125 260* 2 5 












BC559B 


TO-92 
(77) 


25 


20 


5 


100 20 




0.3 0.82- 10 
0.65 100 








4 
















240 500- 2 5 


0.6 0.75- 2 












BC559C 


TO-92 
(77) 


25 


20 


5 


100 20 




0.3 0.82* 10 
0.65 100 
0.6 0.75- 2 








4 














450 900- 2 5 












BC560 


TO-92 
(77) 


50 


45 


5 


100 45 


125 500* 2 5 


0.3 0.82* 10 
0.65 100 
0.6 0.75" 2 








2 




BC560A 


TO-92 
(77) 


50 


45 


5 


100 45 


125 260" 2 5 


0.3 0.82" 10 
0.65 100 
0.6 0.75" 2 








2 




BC560B 


TO-92 
(77) 


50 


45 




100 45 
















5 


240 500" 2 5 


0.3 0.82* 10 
0.65 100 
0.6 0.75* 2 








2 





TEST CONDITIONS: 

(II l c f 200 fiA, V CE = 5V, f = 1kHz. (2) l c = 100mA, V cc • 20V, l B 1 = l B 2 = 5mA. (3) l C = 200 mA, V CE = 2V, f = 1kHz. (4) l c = 100mA, V cc = 10V. I g 1 =■ l B 2 = 10mA. 15) l c - 10mA. 
I B 1 = l B 2 = 1mA. (6) l C = 100 mA, V ce = 5V, f = 1kHz. (7) l c = 1mA, V CE = 10V, f - 200kHz. (8) l c = 1mA. V CE = 5V, f = 1kHz. (9) l c = 150mA, V cc - 6V, l B 1 = l B 2 = 15mA. 1101 l ( 
V CE = 5V, f -1kHz. (11) l c = 150mA. V CC « 10V, l g 1 = l B 2= 75mA. (12) l c = 300mA, V cc - 25V, l B 1 = l B 2 = 30mA (13) l c = 10*iA, V CE = 5V, f = WB. (14) l c - 500mA, V CC - 25V. I| 
l B 2 - 25mA. (151 l c - 10mA, V BE = 2V, l B ' - 3mA, l B 2 = 1mA. (16) l C = 100mA, l B 1 ■ 40mA, l B 2 = 20mA. 



S9U9S UOJJC 




Pro Electron Series 

. . 



Tvpe 
No. 


Case 
Style 


V C ES" 
v CBO 
IV) 
Min 


VcEO 
IV) 
Min 


Vebo 

(VI 
Min 


'CES* 

'CBO s V CB 
(nA) (V) 
Max 


HFE 

hfe @ IC & V CE 
1 kHz' * (mA) (V) 
Min Max 


Vr-cc-x, V BEISAT) 
Mm Max 


Cob 
(pF) 
Max 


ft 

T lr 
(MHz) (a \. 

»„ (mA) 
Mm Max 


*off 
(nsl 
Max 


NF 

IdB) 
Max 


Test 
Condition 


Process 
No 






























BC560C 


TO-92 
(77! 


50 


45 


5 


100 45 


450 900* 2 5 


0.3 0.82* 10 
0.65 1 00 
0.6 0.75* 2 








2 


1 


71 


BCY56 


TO-18 


45 
























45 


5 


100 20 


40 10 5 
100 450 2 5 
125 500* 2 5 
40 0.01 5 


0.6 0.7* 2 




5 


1 


04 




























BCY57 


TO-18 


25 


20 


5 


100 20 


200 10 5 
200 800 2 5 
240 900* 2 5 
100 0.01 5 


0.6 0.7* 2 








5 


1 


04 




























BCY5S 


TO-18 




32 


7 


10 1 " 32 


40 100 1 
80 1000 10 1 


0.35 0.6 0.85 10 
0.7 0.75 1.2 100 
0.55 0.7* 2 


6 


125 10 


800 


6 


4/1 


04 














125 700* 2 5 














BCY58-7 


TO-18 




32 


7 


10+ 32 


40 100 1 
80 1000 10 1 
125 250* 2 5 


0.35 0.6 0.85 10 
0.7 0.75 1.2 100 
0.55 0.7* 2 


6 


125 10 


800 


6 


4/1 


04 


























BCY58-8 


TO-18 




32 


7 


10+ 32 


40 100 1 
80 1000 10 1 
175 350* 2 5 


0.35 0.6 0.85 10 
0.7 0.75 1.2 100 
0.55 0.7* 2 


6 


125 10 


800 


6 


4/1 


04 


























BCY58-9 


TO-18 




32 


7 


10+ 32 


40 1 00 1 

on 1 nnri m i 
OU IUUU IU 1 

250 500* 2 5 


0.35 0.6 0.85 10 

n ~i n"7C 11 1 n/i 
U./ U./O t .Z IUU 

0.55 0.7* 2 


6 


125 10 


800 


6 


4/1 


04 


























BCY58-10 


TO-18 




32 


7 


10 1 " 32 


40 100 1 
80 1000 10 1 


0.35 0.6 0.85 10 
0.7 0.75 1.2 100 
0.55 0.7* 2 


6 


125 10 


800 


6 


4/1 


04 














350 700* 2 5 














BCY59 


TO-18 




45 


7 


10 f 45 


40 100 1 
80 1000 10 1 
125 700* 2 5 


0.35 0.6 0.85 10 
0.7 0.75 1 .2 


6 

100 


125 10 


800 


6 


4/1 


04 














0.55 0.7* 2 












BCY59-7 


TO-18 




45 


7 


10 f 45 


40 100 1 
30 1000 10 1 
125 250" 2 5 


0.35 0.6 0.85 10 
0.7 0.75 1.2 100 
0.55 0.7* 2 


6 


125 10 


800 


6 


4/1 


04 


























BCY59-8 


TO-18 




45 


7 


10+ 45 


40 100 1 
80 1000 10 1 
175 350* 2 5 


0.35 0.6 0.85 10 
0.7 0.75 1.2 100 
0.55 0.7* 2 


6 

100 


125 10 


800 


6 


4/1 


04 
























BCY59-9 


TO-18 




45 


7 


10* 45 


40 100 1 
80 1000 10 1 
250 500* 2 5 


0.35 0.6 0.85 10 
0.7 0.75 1.2 100 
0.55 0.7* 2 


6 


125 10 


800 


6 


4/1 


04 


























BCY59-10 


TO-18 




45 


7 


10t 45 


40 100 1 
80 1000 10 1 
350 700* 2 5 


0.35 0.6 0.85 10 
0.7 0.75 1.2 100 
0.55 0.7* 2 


6 


125 10 


800 


6 


4/1 


04 



Type 
No. 


Case 
Style 


V CES* 
v CBO 
(V) 
Min 


v CEO 
(V) 
Min 


v EBO 
(V) 
Min 


'CES* 
'CBO , 
(nA) 
Max 


, V CB 

(V) 


H F E 

"fe , 
1 kHz» 
Min Max 


J 'C g, 
(mA) 


V C E 
(VI 


V CE(SAT) 
(V) 
Max 


V BE(SATI 
& V B EIONf g, 
(V) 

Min Max 


ic 

ImAI 


^ob 
IpF) 
Max 


<T 
IMHzl 
Min Max 


(mA) 


'off 
Ins) 
Max 


NF 
IdBI 
Max 


Test 
Condition 


Process 

No. 


BCY70 


TO-18 


50 


40 


5 


10 


40 


40 
45 
50 
15 




0.1 
1 

10 
50 




0.25 
0.5 


0.6 0.9 
1 .2 


10 
50 


6 


250 


10 


420 


6 


5/6 


71 


BCY71 


TO- 18 


45 


45 


5 


500 


45 


40 




0.01 

0.1 

1 





0.25 


0.6 0.9 


10 


6 


200 


10 




2 


6 


71 
















80 
90 








































100 


600 


10 


1 


0.5 


1.2 


50 
















BCY71 A 


TO-18 


45 


45 


5 


500 


45 


40 
80 
90 




0.01 
0.1 

1 




0.25 


0.6 0.9 


10 


6 


300 


10 


420 


2 




71 




1 
1 
1 


6 
















100 


600 


10 




0.5 


1.2 


50 
















BCY72 


TO-18 


25 


25 


5 


500 


20 


40 




1 




0.25 




10 


6 


200 


10 


420 


6 


5/6 


71 






50 




10 


! 


0.5 


1.2 


50 






BD135 


TO-126 


45 


45 


5 


100 


30 


25 




500 


2 


0.5 


1.0' 


500 




50 


50 


420 


6 


5/6 


37 














40 


250 


50 


2 












BC136 


TO-126 


45 


45 


5 


100 


30 


25 




500 


2 


0.5 


1.0* 


500 




50 


50 








77 










40 


250 


50 


2 














BD137 


TO-126 


60 


60 


5 


100 


30 


25 




500 


2 


0.5 


1.0' 


500 




50 


50 


420 


6 


5/6 


38 
















40 


160 


50 


2 


















BD138 


TO-126 


60 


60 


5 


100 


30 


25 




500 


2 


0.5 


1.0' 


500 




50 


50 








78 












40 


160 


50 


2 


















BD139 


TO-126 


80 


80 


5 


100 


30 


25 




500 


2 


0.5 


1.0' 


500 




50 


50 


420 


6 


5/6 


39 












40 


160 


50 


2 














BD140 


TO-126 


80 


80 


5 


100 


30 


25 




500 


2 


0.6 


1 .0* 


500 




50 


50 


420 


6 


5/6 


79 












40 


160 


50 


2 




















B0201 


TO-220 


60 


45 


5 


10 uA 


40 


30 
30 
75 




3A 


2 


1.0 


1.5« 


3A 




3 


300 


420 


6 


5/6 


4A 








235 


1A 
500 


2 
1 














BD202 


TO-220 


60 


45 


5 


IOjjA 


40 


30 
30 
75 




3A 


2 


1.0 


1.5' 


3A 
1 




3 


300 


420 


6 


5/6 


5A 


BD233 


TO-126 


45 


45 




100 /iA 


45 


25 




1A 


2 


0.6 


1.3' 


1A 





3 


250 


420 


6 


5/6 


2C 
















40 




150 


2 























TEST CONDITIONS: 

(II Ic - 200 (iA, V C E = 5V, f = 1kHz. (2) l c 100mA, V cc = 20V, Ip, 1 ■ l B 2 = 5mA. (3) l c = 200 mA, V ce " 2V, f = 1kHz. (4) l c = 100mA, V cc - 10V, Ib 1 - l B 2 = 10mA. (51 l c = 10mA, V cc = 3V, 
l B 1 = | B 2 = imA. (6) l c = 100 (iA, V CE = 5V, f » 1kHz. (7) l c = 1mA, V CE = 10V, f = 200kHz. (8) Ic = 1mA, Vce = 5V, f = 1kHz. (91 l c = 150mA, V cc " 6V, l B 1 = Ifi 2 = 15mA. (10) Ic ■ 200 m A, 
V C E - 5V,f =1kHz. (111 l c = 150mA, V C C * 1<> v . 'B 1 " *B 2 = 75mA. (12) l c " 300mA, V cc = 25V, Ib 1 " Ifl 2 " 30mA. (13) l c » 10jiA, V C E " 5V, f » WB. (14) l c = 500mA, V C C = 25V, lp.1 =50mA, 
l B 2 = 25mA. (15) l c = 10mA, V B E =2V, l B 1 - 3mA, l B 2 - 1mA. (161 l c - 100mA, l B 1 = 40mA, l B 2 - 20mA. 



saues uoipaig ojd 



Pro Electron Series 



Type 
No. 


Case 

Style 


V CES 

VCBO 
(VI 


VCEO 
(V) 
Min 


v EBO 

(VI 
Min 


ices* 

'CBO a 
InAI 


V C B 

(VI 




"FE 
"f. 
1 kHz' 


(mA) 


V C E 

IV) 


VcE(SAT) 
(VI 
Max 


V BE(SATI 
. VbeIONI' a 
& (V) ® 


'C 

(mA) 


Cob 
(pF) 
Max 


(MHz) «, C A1 
... ,, ImA) 
Mm Max 


'off 
Ins) 
Max 


NF 
(dBI 
Max 


Test 
Condition 


Process 
No 






Min 


Max 




Min Max 






Min Max 








BD234 


TO-126 


45 


45 




100 M A 


45 


25 




1A 


2 


0.6 


1.3* 


1A 




3 


250 


420 


6 


5/6 


3C 














40 




150 


2 






















BD235 


TO-126 


60 


60 




100 mA 


60 


25 
40 




1A 
150 


2 
2 


0.6 


1.3' 


1A 




3 


250 


420 


6 


5/6 


2C 


BD236 


TO-126 


60 


60 




100 uA 


60 


25 
40 




1A 
150 


2 
2 


0.6 


1 .3* 


1A 




3 


250 


420 


6 


5/6 


3C 


BD237 


TO-126 


80 


80 




100 mA 


80 


25 




1A 


2 


0.6 


1.3* 


1A 




3 


250 


420 


6 


5/6 


2C 












40 




150 


2 


















BD238 


TO-126 




80 




100 mA 


80 


25 




1 A 


2 


0.6 


1.3* 


1 A 




3 


250 


420 


6 


5/6 


3C 










40 




150 


2 






BD239 


TO-220 




45 




200 mA* 


45 


15 




1A 


4 


0.7 


1.3" 


1A 




3 


200 


420 


6 


5/6 


4F(2CI 












40 




200 


4 


















BD239A 


TO-220 




60 




200 mA* 


60 


15 




1A 


4 


0.7 


1.3* 


1A 




3 


200 


420 


6 


5/6 


4F(2C) 










40 




200 


4 














BD239B 


TO-220 




80 




200 mA" 


80 


15 




1A 


4 


0.7 


1.3* 


1A 




3 


200 


420 


6 


5/6 


4FI2CI 












40 




200 


4 


















BD239C 


TO-220 




100 




200 mA* 


100 


15 




1A 


4 


0.7 


1.3* 


1A 




3 


200 


420 


6 


5/6 


4F12C) 












40 




200 


4 














BD240 


TO-220 




45 




200 uA • 


45 






1A 


4 


0.7 


1.3" 


1A 




3 


200 


420 


6 


5/6 


5F(3C) 










40 




200 


4 














BD240A 


TO-220 


80 


60 




200 mA" 


60 


15 




1A 


4 


07 


i_as 


1A 




3 


200 


420 


6 


5/6 


5FI3C) 




40 




200 


4 










BD240B 


TO-220 


80 


80 




200 mA* 


80 


15 
40 




1A 
200 


4 
4 


0.7 


1.3* 


1A 




3 


200 


420 


6 


5/6 


5F(3C) 


BD240C 


TO-220 


80 


100 




200 mA- 


100 


15 
40 








0.7 


1.3* 


1A 












5/6 


5FI3CI 






1A 
200 


4 
4 




3 


200 


420 


6 


BD241 


TO-220 


80 


45 




200 mA* 


45 


10 
25 




3A 
1A 


4 
4 


1.3 


1.8* 


3A 




3 


500 


420 


6 


5/6 


4FI2C) 


BD241A 


TO-220 


80 


60 




200 mA* 


60 


10 
25 




3A 
1A 


4 
4 


1.3 


1.8* 


3A 




3 


500 


420 


6 


5/6 


4FI2C) 


BD2410 


TO-220 


80 


80 




200 mA* 


80 


10 
25 




3A 
1A 


4 
4 


1.3 


1.8* 


3A 




3 


500 


420 


6 


5/6 


4FI2CI 


BD241C 


TO-220 


80 


100 




200 mA* 


100 


10 

25 




3A 
1A 


4 
4 


1.3 


1.8* 


3A 




3 


500 


420 


6 


5/6 


4FI2C) 


BD242 


TO-220 


80 


45 




200 mA" 


45 


10 
25 




3A 
1A 


4 
4 


1.2 


1.8* 


3A 




3 


500 


420 


6 


5/6 


5EI3EI 


BD242A 


TO-220 


80 


60 




200 m A* 


60 


10 
26 




3A 
1A 


4 
4 


1.2 


1.8* 


3A 




3 


500 


420 


6 


5/6 


5EI3EI 

















































V CES* 


v CEO 

(VI 


v EBO 

(V) 


'CES 






H F E 






V CE(SATI 
(VI 
Max 


V BE(SAT) 




c ob 
(pF) 
Max 


■T 
(MHz) 
Min Max 




•off 
Insl 
ax 


NF 
IdB) 
ax 






Type 
No. 


Case 
Style 


v CBO 
(VI 


'CBO <a 
(nAI 


V C B 
IV) 


"fe ( 
1 kHz* 


(mAI 


V C E 
(V) 


& v BE(ONI* @ 
IV) 


ic 

(mA) 


(mAI 


Test 
Conditron 


Process 
No 






Min 






Max 




Mm 


Max 






Min Max 










BD242B 


TO-220 


80 


80 




200 uA* 


80 


10 




3A 


4 


1.2 


1.8* 


3A 


3 


3 


500 


420 


6 


5/6 


5EI3E) 
















25 




1A 


4 






















BD242C 


TO -220 


80 


100 




200 fiA* 


100 


10 




3A 


4 


1.2 


1.8* 


3A 




3 


500 


420 


6 


5/6 


5EI3E) 
















25 




1A 


4 






















BD370A 


TO-92+ 


80 


45 




100 


45 


25 


400 


500 


2 


0.7 


1.2? 


1A 


30 


50 


200 


420 


6 


5/6 


78 




(911 












40 


100 


1 


















BD370A-10 


TO-92+ 


80 


45 




100 


45 


25 




500 


2 


0.7 


1.2« 


1A 


30 


50 


200 


420 


6 


5/6 


78 




1911 












63 


160 


100 


1 






















BD370A-16 


TO-92+ 
(91) 


80 


45 




100 


45 


26 


250 


500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 














100 


100 


1 






















BD370A-25 


TO-92+ 


80 


45 




100 


45 


25 




500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 




(91) 












160 


400 


100 


1 


















BD370B 


TO-92+ 
(911 


80 


60 




100 


60 


25 
40 


400 


500 
100 


2 
1 


0.7 


1.2' 


1A 


30 


50 


200 


420 


6 


5/6 


78 


BD370B-10 


TO-92+ 


80 


60 




100 


60 


25 


160 


500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 




(91) 












63 


100 


1 






















BD370B-16 


TO-92+ 


80 


60 




100 


60 


25 




500 


2 


0.7 


1.2* 


1 A 


30 


50 


200 


420 


6 


5/6 


78 




(91) 












100 


250 


100 


1 






















BD370B-25 


TO-92+ 
(91) 


80 


60 




100 


60 


25 


400 


500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 














160 


100 


1 






















BD370C 


TO-92+ 


80 


80 




100 


80 


25 




500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 




(91) 












40 


400 


100 


1 


















BD370-6 


TO-92+ 
(91) 


80 


80 




100 


80 


25 


100 


500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 














40 


100 


1 






















BD370C-10 


TO -92+ 
191) 


80 


80 




100 


80 


25 




500 


2 


0.7 


1.2* 


1 A 


30 


50 


200 


420 


6 


5/6 


78 












63 


160 


100 


1 






















BD370C-16 


TO-92+ 


80 


80 




100 


80 


25 


250 


500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 




(91) 












100 


100 


1 






















BD370D 


TO-92+ 
(91) 


80 


100 




100 


80 


25 




500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


79 














40 


400 


100 


1 


















BD370D-6 


TO-92+ 
(91) 


80 


100 




100 


80 


25 


100 


500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


79 












40 


100 


1 























TEST CONDITIONS: 

(1) l C = 200 »jA. V CE = 5V, f - 1kHz. (2) l c = 100mA, V C C = 20V, l B 1 = l B 2 = 5mA. (3) l C " 200 ^A, V C E - 2V, f ■= 1kHz. (4) l c = 100mA, V cc = 10V, l B 1 = l B 2 = 10mA. (5) l c = 10mA, V cc = 3V, 
I B 1 " 'B 2 = 1mA - <6> lc = 100 mA, V CE = 5V, f = 1kHz. (7) l C J 1mA, V CE ■ 10V, f - 200kHz. (8) l C = 1mA, V CE = 5V, f = 1kHz. (9) l c = 150mA, V cc = 6V, l B ' = l B 2 = 15mA. (10) l C = 200 n A, 
V CE = 5V, f =1kHz. (11) l c = 150mA, V cc = 10V. I B ' = l B 2 = ?5mA. (121 l c - 300mA, V cc • 25V, l B 1 = l B 2 = 30mA. 113) l c = 10,uA, V CE - 5V, f = WB. (14) l c • 500mA, V cc - 25V, l B ' » 50mA, 
l B 2 « 25mA. (15) l C = 10mA, V BE = 2V, l B 1 - 3mA. I g 2 = 1mA. (16) l C - 100mA, Is 1 " 40mA, l B 2 m 20mA. 



sauas uojpa|3 ojd 



Pro Electron Series 



Type 

No. 


Style 


V CES* 
v CBO 
(VI 
Min 


V C EO 
(VI 
Min 


VEBO 
(VI 
Min 


'CES* 

'CBO g, V CB 
(nA) (V) 
Max 


HFE 

"fe g 'C & V C E 
1 kHz* (mA) (V) 
Min Max 


Mm Max 


Cob 
(pF) 
Max 


*t 

IMHzl <&, C A , 
... ,, (mA) 
Mm Max 


«o« 
Insl 
Max 


NF 

IdBI 
Max 


Condition 


Procsss 

No. 


BD370D-10 


TO-92+ 
(91) 


80 


100 




100 80 


25 500 2 
63 160 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


79 


BD371 A 


TO-92+ 
(91) 


80 


45 




100 45 


25 500 2 
40 400 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371A-10 


TO-92+ 


80 


45 




100 45 


25 500 2 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 




191) 










63 160 100 1 
















BD371A-16 


TO-92+ 
191) 


80 


45 




100 45 


25 500 2 
100 250 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371A-25 


TO-92+ 


80 


45 




100 45 


25 500 2 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 




(91) 










160 400 100 1 
















BD371B 


TO-92+ 
(91) 


80 


60 




100 60 


25 500 2 
40 400 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371B-10 


TO-92+ 
(91) 


80 


60 




100 60 


25 500 2 
63 160 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371B-16 


TO-92+ 
(91) 


80 


60 




100 60 


25 500 2 
inn ?Rn inn i 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371B-25 


TO-92+ 
191 ) 


80 


60 




100 60 


25 500 2 
160 400 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371C 


TO-92+ 
(91) 


80 


80 




100 80 


25 500 2 
40 ann inn 1 

HU HW 1 UU 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371C-6 


TO-92+ 
(911 


80 


80 




100 80 


25 500 2 - 
40 100 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371C-10 


TO-92+ 

(Q1 \ 


80 


80 




100 80 


25 500 2 

J 1 DO 1 UU 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371C-16 


TO-92+ 
(91) 


80 


80 




100 80 


25 500 2 
100 250 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD371D 


TO-92+ 
(91) 


80 


100 




100 100 


25 500 2 
40 400 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


39 


BD371D-6 


TO-92+ 
191) 


80 


100 




100 100 


25 500 2 
40 100 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


39 


BD371D-10 


TO-92+ 
(911 


80 


100 




100 100 


25 500 2 
63 160 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


39 


BD372A 


TO-92+ 
(90) 


80 


45 




100 45 


25 500 2 
40 400 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


78 


BD372A-10 


TO-92+ 
(90) 


80 


45 




100 45 


25 500 2 
63 160 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


78 


BD372A-16 


TO-92+ 
(90) 


80 


45 




100 45 


25 500 2 
100 250 100 1 


0.7 1.2* 1A 


30 


50 200 


420 


6 


5/6 


78 



Type 
No. 


Caw 
Style 


V CES 
v CBO 
(VI 
Min 


v CEO 
(V) 
Min 


VEBO 

(V) 
Min 


'CES 
'CBO e 
(nA) 
Max 


V C B 

(V) 


HFE 

If. 

1 kHz' 


(mA> 


V C E 

(VI 


V CE(SATI 
(VI 8, 
Max 


Vnr It* A TV 

Vbeioni* & 

<v> 


'c 

ImAI 


Cob 
IpFI 


<T 
(MHzl 
Min Max 


(mAI 


•off 
(ns) 


NF 

IdB) 


Test 
Condition 


Process 
No. 












Mm 


Max 








iflin Max 


















BD372A-25 


TO-92+ 
I90I 


80 


45 




100 


45 


25 
160 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 


BD372B 


TO-92 
I90I 


80 


60 




100 


60 


25 
40 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 


BD372B-10 


TO-92 
(901 


80 


60 




100 


60 


25 
63 


■ee 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 


BD372B-16 


TO-92 
(901 


80 


60 




100 


60 


25 
100 


250 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 


B0372B-25 


TO-92 
(901 


80 


60 




100 


60 


25 
160 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 


BD372C 


TO-92+ 
(901 


80 


80 




100 


80 


25 
40 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 


B0372C-6 


TO-92+ 
(90) 


80 


80 




100 


80 


25 
40 


100 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 


BD372C-10 


TO-92+ 
(901 


80 


80 




100 


80 


25 
63 


160 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 


BD372C-16 


TO-92+ 


80 


80 




100 


80 


25 


250 


500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


78 




(90) 












100 


100 


1 






















B0372D 


TO-92+ 
(90) 


80 


100 




100 


100 


25 
40 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


79 


BD372D-6 


TO-92+ 
(901 


80 


100 




100 


100 


25 
40 


100 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


79 


BD372D-10 


TO-92+ 
(901 


80 


100 




100 


100 


25 
63 


160 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


79 


BD373A 


TO-92+ 
(901 


80 


45 




100 


45 


25 
40 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373A-10 


TO-92+ 
(90) 


80 


45 




100 


45 


25 
63 


160 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373A-16 


TO-92+ 
(90) 


80 


45 




100 


45 


25 
100 


250 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373A-25 


TO-92+ 
(901 


80 


45 




100 


45 


25 
160 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 



TEST CONDITIONS: 

(II l C * 200 tiA, V CE • 5V, f = 1kHz. (2) l c M 100mA, V cc - 20V. I B 1 = lf.2 ■ 5mA. (31 l C - 200 jiA. V CE - 2V. f - 1kHz. (4) l c = 100mA, V cc » 10V, l B ' - l B 2 = 10mA. (51 l c * 10mA, V CC = 3V, 
l B 1 > l B 2 ■ 1mA. (6) l C - 100 iiA, V CE = 5V, f - 1kHz. (71 l c = 1mA, V CE - 10V, f = 200kHz. (81 l C = 1mA, V CE = 5V, f = 1kHz. (9) l c = 150mA, V cc • 6V, l B 1 = l B 2 - 15mA. (10) l C - 200 ^A, 
V CE - 5V,f =1kHz. (11) l c = 150mA, V cc = 10V, l B ' = Ip2 =- 75mA. (12) l c " 300mA. V cc ■ 25V, l B 1 = l B 2= 30mA. (13) l c - 10>jA, V ce - 5V, f = WB. (14| l c » 500mA, V cc - 25V, l B ' =50mA, 
l B 2 • 25mA. (15) l c - 10mA, V BE - 2V, l B 1 - 3mA, l B 2 - 1mA. (161 l C - 100mA, l B 1 - 40mA, l B 2 = 20mA. 



sauas uojpaig ojd 



Pro Electron Series 





No. 


Style 


VCES* 

VCBO 

(V) 

Min 


V C EO 
(V) 
Min 


VEBO 

(VI 
Min 


'CES" 
'CBO g 
(nAl 
Max 


V CB 

(V) 


H F E 

hfe , 
1 kHz" 
Min Max 


a c & 
(mA) 


V CE 
(VI 


VCE(SAT) 
(V) 
Max 


V BE(SAT) 
i v BE(ONl" (5J 
(VI 

Min Max 


'C 
(mAl 


C D b 
IpFI 
Max 


Mi 


' T Ir 
MHzl @> C A , 

n Max 


•off 

(nsl 
Max 


NF 

IdBI 
Max 


Test 
Condition 


No. 


BD373B 


TO-92+ 
(90) 


80 


60 




100 


60 


25 
40 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373B-10 


TO-92-f 
(90) 


80 


60 




100 


60 


25 
63 


160 


500 
100 


2 
1 


0.7 


1.2* 


1 A 


30 


50 


200 


420 


6 


5/6 


38 


BD373B-16 


TO-92+ 
(90) 


80 


60 




100 


60 


25 
100 


250 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373B-25 


TO-92+ 
(90) 


80 


60 




100 


60 


25 
160 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373C 


TO-92+ 
(90) 


80 


80 




100 


80 


25 
40 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373C-6 


TO-92+ 
(90) 


80 


80 




100 


80 


25 
40 


100 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373C-10 


TO-92+ 
(90) 


80 


80 




100 


80 


25 
63 


160 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD373C-16 


TO-92+ 


80 


80 




100 


80 


25 




500 


2 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


38 




(90) 












100 


250 


100 


1 






















BD373D 


TO-92+ 
(90) 


80 


100 




100 


100 


25 
40 


400 


500 
100 


2 
1 


0.7 


1.2* 


1A 


30 


50 


200 


420 


6 


5/6 


39 


BD373D-6 


TO-92+ 
(90) 


80 


100 




100 


100 


25 
40 


100 


500 
100 


2 
1 


0.7 


1.2* 


1 A 


30 


50 


200 


420 


6 


5/6 


39 


BD373D-10 


TO-92+ 
(90) 


80 


100 




100 


100 


25 
63 


160 


500 
100 


2 
1 


0.7 


1 .2* 


1 A 


30 


50 


200 


420 


6 


5/6 


39 


BD375 


TO-126 


50 


45 




2 uA 


45 


20 
40 


375 


1A 
150 


2 
2 


1.0 


1.5* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD375-6 


TO-126 


50 


45 




2 mA 


45 


20 
40 


100 


1A 
150 


2 
2 


1.0 


1.5* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD375-10 


TO-126 


50 


45 




2 mA 


45 


20 




1A 


2 


1.0 


1.5* 


1A 


30 


50 


200 


420 


6 


5/6 


38 
















63 


160 


150 


2 






















BD375-16 


TO-126 


50 


45 




2 mA 


45 


20 
100 


250 


1 A 
150 


2 
2 


1.0 


1.5* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD375-25 


TO-126 


50 


45 




2 (iA 


45 


20 
150 


375 


1A 
150 


2 
2 


1.0 


1.5* 


1A 


30 


50 


200 


420 


6 


5/6 


38 


BD376 


TO-126 


50 


45 




2 >jA 


45 


20 
40 


375 


1A 
150 


2 
2 


1.0 


1.5* 


1A 


30 


60 


200 


420 


6 


5/6 


78 


BD376-6 


TO-126 


50 


45 




2 mA 


45 


20 




1A 


2 


1.0 


1.5* 


1A 


30 


50 


200 


420 


6 


5/6 


78 
















40 


100 


150 


2 






















BD376-10 


TO-126 


50 


45 




2 wA 


45 


20 




1A 


2 


1.0 


1.5* 


1A 


30 


50 


200 


420 


6 


5/6 


78 
















63 


160 


150 


2 























Type 
No. 


Case 
Style 


V CES* 
v CBO 
(VI 
Min 


v CEO 
IV) 
Min 


v EBO 
(V) 
Min 


'CES* 

!CBO @ V CB 
(nAl (VI 
Max 


H FE 

"fa g, lc & V CE 
1 kHz" (mAl (VI 
Min Max 


(V (mA 

Ma * » xi 

Mm Max 


C b 
(pFI 
Max 


(MHz) ffl c 
(mAl 

Mm Max 


•off 
(nsl 
Max 


NF 
IdBI 
Max 


Test 
Condition 


Process 
No 


BD376-16 


TO-126 


50 


45 




2 >iA 45 


20 1 A 2 
100 200 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 




BD376-25 


TO-126 


50 


45 




2 mA 45 


20 1A 2 
150 375 150 2 


1.0 1.5* 1 A 


30 


50 200 


420 


6 


5/6 


78 


BD377 


TO-126 



75 




60 




2 mA 60 


20 1A 2 
40 375 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


38 














20 1A 2 
40 100 150 2 


1 .0 1 .5* 1 A 


30 


50 200 


420 


6 


5/6 


38 


BD377-10 


TO-126 


75 


60 




2 mA 60 


20 1A 2 
63 160 150 2 


1.0 1.5* 1 A 


30 


50 200 


420 


6 


5/6 


38 


BD377-16 


TO-126 


75 


60 




2 mA 60 


20 1A 2 
100 250 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD377-25 


TO-126 


75 


60 




2 mA 60 


20 1A 2 
150 375 150 2 


1.0 15* 1A 


30 


50 200 


420 


6 


5/6 


38 


BD378 


TO-126 


75 


60 




2pA 60 


20 1A 2 
40 375 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


78 


BD378-6 


TO-126 


75 


60 




2,uA 60 


20 1A 2 
40 100 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


78 


BD378-10 


TO-126 


75 


60 




2 mA 60 


20 1A 2 
63 160 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


78 


BD378-16 


TO-126 


75 


60 




2nA 60 


20 1A 2 
100 250 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


78 


BD378-25 


TO 126 


75 


60 




2 mA 60 


20 1A 2 
150 375 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


78 


BD379 


TO-126 


100 


80 




2 mA 80 


20 1A 2 
40 375 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


39 


BD379-6 


TO-126 


100 


80 




2/jA 80 


20 1 A 2 
40 100 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


39 


BD379-10 


TO-126 


100 


80 




2(iA 80 


20 1A 2 
63 160 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


39 


BD379-16 


TO-126 


100 


80 




2 mA 80 


20 1A 2 
100 250 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


39 



TEST CONDITIONS: 

(1) lc - 200 /J A, V CE = 5V, f = 1kHz. (2) l c = 100mA, V cc = 20V. I B 1 = l B 2 = 5mA. (3) l c « 200 >x A, V CE - 2V. f * 1kHz. (4) l c = 100mA. V cc - 10V, Igl = l B 2 ' 10mA. (5) l c ' 10mA, V cc - 3V 
IB 1 = l B 2 - 1mA. 161 l C *. 100 jiA. V CE = 5V, f = 1kHz. 17) l C S 1mA, V CE - 10V. f . 200kHz. (8) l C ■ 1mA. V CE - 5V, f - 1kHz. (91 l c . 150mA, V cc . 6V, l B 1 • l B 2 ' 15mA. I10I l c 200 »A, 
V CE - 5V, f =1kHz. (11) l c = 150mA, V cc - 10V, Ig1 = l B 2 ' 75mA. (121 l c = 300mA, V cc = 25V, l B 1 = Ig2 = 30mA. 113) l c = 10 mA, V CE = 5V, f = WB. 114) l c = 500mA, V cc = 25V. I B 1 = 50mA, 
l B 2 = 25mA. (15) l c = 10mA, V BE = 2V, l g 1 = 3mA, l B 2 - 1mA. 1161 l c - 100mA, l g 1 = 40mA, Ig 2 = 20mA. 




Pro Electron Series 





Type 
No. 


Case 
Style 


VCES' 
VcBO 
(VI 
Min 


v CEO 
(VI 
Min 


V EB 

(V) 
Min 


'CES" 

'CBO @ V CB 
<nA) (V) 
Max 


hfe 

h fe @ 'C & V CE 
1 kHz* (mAI (V) 
Min Max 


(V) ImA] 
Mm Max 


c ob 
(pF) 
Max 


' T >C 
(MHz) » c 

Min Max 


'off 
Ins) 
Max 


NF 
IdB) 
Max 


Test 
Condition 


Process 
No. 


BD379-25 


TO- 126 


100 


80 




2»i A 80 


20 1A 2 
150 375 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


39 


BD380 


TO-126 


100 


80 




2<iA 80 


20 1A 2 
40 375 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


79 


SD380-6 


TO- 126 


100 


80 




2(i A 80 


20 1A 2 
40 100 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


79 


BD380-10 


TO 126 


100 


80 




2jjA 80 


20 1A 2 
63 160 150 2 


1.0 15* 1 A 


30 


50 200 


420 


6 


5/6 


79 


BD380-16 


TO-126 


100 


80 




2 mA 80 


20 1A 2 
100 250 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


79 


BD380-25 


TO-126 


100 


80 




2 mA 80 


20 1A 2 
150 375 150 2 


1.0 1.5* 1A 


30 


50 200 


420 


6 


5/6 


79 


BD433 


TO-126 


22 f 


22 


5 


100 tiA 22 


50 2A 1 
85 475 500 1 
40 10 5 


0.5 1.1* 2A 




3 250 


420 


6 


5/6 


2E 


BD434 


TO-126 


22 1 


22 


5 


100 mA 22 


50 2A 1 
85 475 500 1 
40 10 5 


0.5 1.1* 2A 


30 


3 250 


420 


6 


5/6 


3E 


BD435 


TO-126 


32 f 


32 


5 


100 m A 32 


50 2A 1 
85 475 500 1 
40 10 5 


0.5 1.1* 2A 


30 


3 250 


420 


6 


5/6 


2E 


BD436 


TO-126 


32 t 


32 


5 


100 mA 32 


50 2A 1 
85 475 500 1 
40 10 5 


0.5 1.1* 2A 


30 


3 250 


420 


6 


5/6 


3E 


BD437 


TO-126 


45t 




5 


1UU fiA HO 


40 2A 1 
40 236 500 1 
30 10 5 


u.o 1 .£ ZA 


30 


3 250 


420 


6 


5/6 


2E 


BD438 


TO-126 


45+ 


45 


5 


100 (j A 46 


40 2A 1 
40 236 500 1 
30 10 5 


6 1.2* 2A 


30 


3 250 


420 


6 


5/6 


3E 


BD439 


TO-126 


60' 


60 


5 


100 m A 60 


25 2A 1 
40 236 500 1 
20 10 5 


0.8 15* 2A 


30 


3 250 


420 


6 


5/6 


2E 


BD440 


TO-126 


60 f 


60 


5 


100 MA 60 


25 2A 1 
40 236 500 1 
20 10 5 


0.8 1 .5* 2A 


80 


3 250 


420 


6 


5/6 


3E 


BD441 


TO-126 


80 t 


80 


5 


100|jA 80 


15 2A 1 
40 236 500 1 

16 10 5 


0.8 1 .5* 2A 


30 


3 250 


420 


6 


5/6 


2E 



Type 
No. 


Case 
Style 


V CES" 
v CBO 
(VI 
Min 


VcEO 
(VI 
Min 


v EBO 

(VI 
Min 


'CES* 

'CBO e V CB 
(nA) IV) 
Max 


hfe 

h fe e !C & V CE 
1 kHz* (mA) (VI 
Min Max 


VrFKATI Vb EISAT) 

' ' (VI (mA) 
Mm Max 


c ob 
(pF) 
Max 


IMHzl e> c 
* m A) 

Mm Max 


'off 

Ins) 
Max 


NF 
IdB) 
Max 


Test 
Condition 


Process 
No 


BD442 


TO-126 


80+ 


80 


5 


100jjA 80 


15 2A 1 
40 236 500 1 
15 10 5 


0.8 1.5* 2A 


30 


3 250 


420 


6 


5/6 


3E 


BD533 


TO-220 


80+ 


45 


5 


100jiA 45 


25 2A 2 
40 500 2 
20 10 5 


0.8 1 .5* 2A 


30 


3 250 


420 


6 


5/6 


4E 


BD534 


TO-220 


80 + 


45 


5 


100 jj A 45 


25 2A 2 
40 500 2 
20 10 5 


0.8 1.6* 2A 


30 


3 250 


420 


6 


5/6 


5E 


BD535 


TO-220 


80 t 


60 


5 


100 mA 60 


25 2A 2 
40 600 2 
20 10 5 


0.8 1.5* 2A 


30 


3 250 


420 


6 


5/6 


4E 


BD536 


TO-220 


80+ 


60 


5 


100mA 60 


25 2A 2 
40 500 2 
20 10 5 


0.8 1.5* 2A 


30 


3 250 


420 


6 


5/6 


5E 


BD537 


TO-220 


80+ 


80 


5 


1 00 juA 80 


15 2A 2 
40 500 2 
15 10 5 


0.8 1.5* 2A 


30 


3 250 


420 


6 


5/6 


4E 


BD538 


TO-220 


80+ 


80 


5 


100 m A 80 


15 2A 2 
40 500 2 
15 10 5 


0.8 1.5* 2A 


30 


3 250 


420 


6 


5/6 


5E 


BD633 


TO-220 


45 


45 


5 


200 mA+ 45 


25 1A 2 
40 25 2 


0.6 1.3* 1A 


30 


3 250 


420 


6 


5/6 


IF 


BD634 


TO-220 


45 


45 


5 


200 mA+ 45 


25 1A 2 
40 25 2 


0.6 1.3* 1A 


30 


3 260 


420 


6 


5/6 


5F 


BD635 


TO-220 


60 


60 


5 


200jjA+ 60 


25 1 A 2 
40 25 2 


0.6 1.3* 1A 


30 


3 250 


420 


6 




4F 


BD636 


TO-220 


60 


60 


5 


200 >iA+ 60 


25 1A 2 
40 25 2 


0.6 1.3* 1A 


30 


3 250 


420 




5/6 


5F 


BD637 


TO-220 


100 


80 


5 


200 mA+ 100 


25 1A 2 
40 25 2 


0.6 1.3* 1A 


30 


3 250 


420 


6 


5/6 


4F 


BD638 


TO-220 


100 


80 


5 


200 mA+ 100 


25 1A 2 
40 25 2 


0.6 1.3 1A 


30 


3 250 


420 


6 


5/6 


6F 



TEST CONDITIONS: 

(II l C = 200 |iA, V CE = 5V, f = 1kHz. (2) l c = 100mA, V cc = 20V, I B 1 = l B 2 = 5mA. (3) l c ■ 200 mA, V ce = 2V, f - 1kHz. (41 l c = 100mA, V cc = 10V, Igl = Irj2 = 10mA. (5) l C = 10mA, V CC = 3V, 
l B + - l B 2 = 1mA. 161 l c = 100 tiA, V CE = 5V, f - 1kHz. (7) l c - 1mA, V CE - 10V, f = 200kHz. 18) l C - 1mA, V CE = 5V, f = 1kHz. (9) l c = 150mA, V cc = 6V, l B + = l B 2 = 15mA. (10) l c = 200 mA, 
VCE " 5V,f =1kHz. (11) l C = 150mA, V cc - 10V, l B 1 * l B 2= 75mA. 112) l c - 300mA, V cc = 25V, l B 1 = l B 2 » 30mA. (13) l c = 10 mA, V ce = 5V, f = WB. (14| l c = 500mA, V cc ■ 25V, l B + =50mA, 
l B 2 = 25mA. (151 l c = 10mA, V BE = 2V, l B + = 3mA, l B 2 - 1mA. 116) l C = 100mA, l g 1 ■ 40mA, l B 2 - 20mA. 



CO 



sauas uojpaig ojd 



Pro Electrc 



23 



Type 

No. 


Style 


V CES" 
VcBO 
(VI 


v CEO 
(VI 
Min 


v EBO 
(V) 
Min 


>CES* 
'CBO @ 
InA) 


V CB 

(V) 


Hfe 

h fe 
1 kHz- 


1 — 

® c & 
ImAI 


V CE 
IVI 


V CEISAT) 
(VI 


V BE(SATI 
. VbeION)* 
IVI 


, 'c 

" ImAI 


c ob 
IpF) 
Max 


' T lr 
(MHz) @ 

M .« (mAI 
Mm Max 


•off 
(ns) 
Max 


NF 
IdB) 
Max 


Te 
Cond 






Min 


Max 




Min Max 






Max 


Mm Max 






BD675 


TO. 126 




45 




200 jjA 


45 


750 


1.5A 


3 


25 


2.5- 


1.5A 




1 1.5A 








BD675A 


TO-126 




45 




200 h A 


45 


750 


2A 


3 


2.8 


2.5" 


2A 




1 I 5A 








BD676 


TO-126 




45 




200 M 


45 


750 


1.5A 


3V 


2.5 


2 5- 


1 5A 




1 1.5A 


























tfUb /OA 


TO-1 26 




45 




200 ^A 


45 


750 


2A 


3V 


2.8 


2 5' 


2A 




1 1 ,5A 








BD677 






60 




200 nA 


60 


750 


1.5A 


3V 




2.5- 


1.5A 












TO-126 






2.5 




1 1 5A 








BD677A 


TO-126 




60 




200 «A 


60 


750 


2A 


3V 


2.8 


2.5' 


2A 




1 1.5A 








BD678 


TO 126 




60 




200 »jA 


60 


750 


1.5A 


3V 


2.5 


2.5 - 


1.5A 




1 1 5A 








BD678A 


TO-126 




M 




200 „A 


60 


750 


2A 


3V 


2.8 


2.5- 


2A 




1 1.5A 


















200 /uA 


80 


750 




«JV 


2.5 


2.5 - 


1.5A 












BD679A 


TO-126 




80 




200n A 


80 


750 


2A 


3V 


2.8 


2 5' 


2A 




1 1 5 A 








B D680 


TO-126 




80 




200 mA 


80 


750 


1 5A 


3 V 


2.5 


2.5- 


1.5A 




1 1 5A 








BD680A 


TO-126 




80 




200 mA 


80 


750 


2A 


3V 


2.8 


2.5- 






1 1.5A 








BD681 


TO-126 




100 






750 


1.5A 


3V 


















2UU KA 


10U 


Z.b 


2.5" 


1.5A 




1 1.5A 








BD682 


TO-126 




!O0 




200 m A 


100 


750 


1 ,5A 


3V 


2.5 


2 5' 


1 .5A 




1 I.5A 








BD733 


TO-220 


25 


25 


5 


200 jjA 1 


25 


50 
40 


2A 
20 


1 

4 


0.6 


t'.f 


2A 




1 1.5A 








BD734 


TO-220 


25 


25 


■ 


200 MA f 


25 


50 
40 


2A 
20 


1 
4 


0.6 


i.r 


2A 




1 1 5A 








BD735 


TO-220 


35 


35 


5 


200 (iAt 


35 


40 
40 


2A 
20 


1 

4 


0.6 


Li- 


2A 




1 1.5A 








BD736 


TO-220 


35 


35 


5 


200 mA* 


35 


40 


2A 


1 


0.6 


Li." 


2A 




1 1.5A 




















40 


20 


4 














BD737 


TO 220 


45 


45 


5 


200MA f 


45 


40 


2A 


1 


0.8 








1 1.5A 






















40 


20 


4 
















































BD738 


TO-220 


45 


45 


5 


200 juA* 


45 


40 
40 


2A 
20 


1 
4 


0.8 


1.1* 


2A 




1 1.5A 








BF167 


T072 

(28) 


40 


30 


4 


100^ 


30 


26 


4 


10 




0.84- 


4 
























BF180 


TO-72 
(25) 


30 


20 


3 


100 


20 


13 
6 


2 

12 


10 
7 


















BF181 


TO-72 
(25) 


30 


20 


3 


100 


20 


13 
6 


2 

12 


10 

7 


















BF182 


TO-72 
(25) 


25 


20 


3 


100 


20 


10 
6 


2 

12 


10 
7 



















BF194 



TO-92 
(78) 



Same as BF254, see page 3-27 for explanation 



_ 







V C ES* 


v CEO 
(VI 
Min 


v EBO 

(V) 
Min 


Ices" 


H F E 


(VI 8 (mAI 

Ma * ». >• 

Mm Max 


c ob 
(pFI 
Max 




•off 

(nsl 
Max 


NF 


Test 
Conditron 


Type 
No. 


Case 
Style 


v CBO 
(VI 
Min 


'CBO a V CB 
InAI IVI 
Max 


hfe @ 'C g, V CE 
1 kHz* (mAI (VI 
Min Max 


(MHz) », C A , 
Mm Max 


IdBI 
Max 


BF195 


TO-92 
(78) 


Same as BF255, see below for explanation 


BF196 


TO-92 
(78) 


Same as BF198, see below for explanation 


BF197 


TO-92 


Same as BF199, see below for explanation 




(78) 




BF198 


TO-92 
(78) 


40 


30 


4 


100 40 


26 4 10 

6 12 7 


0.85" 4 












BF199 


TO-92 
(78) 


40 


25 


4 


100 40 


38 7 10 
6 12 7 






1100tyu 7 








BF200 


TO-72 
(25) 


30 


20 


3 


100 40 


15 3 10 
6 12 7 














BF233-2 




30 


30 












150 1 








TO-92 
(711 


4 


100 10 


40 70 1 10 
6 12 7 


0.65 0.74* 1 


1.0 








BF233-3 


TO-92 
(71) 


30 


30 


4 


100 10 


60 100 1 10 
6 12 7 


0.65 0.74' 1 


1.0 


150 1 








BF233-4 


TO-92 
(71) 


30 


30 


4 


100 10 


90 150 1 10 
6 12 7 


0.65 0.74- 1 


1.0 


150 1 








BF233 5 


TO-92 
(71) 


30 


30 


4 


100 10 


140 220 1 10 
6 12 7 


0.65 0.74" 1 


1.0 


150 1 








BF240 


TO-92 


40 


40 


4 


100 20 


67 222 1 10 


0.65 0.74- 1 


0.34 






3.5 


7 


(78) 




6 12 7 












BF241 


TO-92 
(78) 


40 


40 


4 


100 20 


36 125 1 10 
6 12 7 


6.65 0.74" 1 


0.34 






3.5 


7 


BF254 


TO-92 
(78) 


30 


20 


5 


100 20 


67 220 1 10 
6 12 7 


0.65 0.74" 1 


0.34 






3.5 


7 


BF255 


TO-92 
(78) 


30 


20 


5 


100 20 


35 125 1 10 
6 12 7 


0.65 0.74* 1 


0.34 






3.5 


7 


BF257 


TO-39 


160 


160 


5 


50 100 


25 30 10 
6 12 7 


1.0 0.65 0.74* 30 


0.34 






3.5 


7 


























BF258 


TO-39 


250 


250 


5 


50 200 


25 30 10 
6 12 7 


1.0 0.65 0.74* 30 


0.34 






3.5 


7 



TEST CONDITIONS: 

(1) l c ■ 200 mA. V CE « 5V, f = 1kHz. (21 l c «. 100mA. V cc = 20V, Ig 1 " l B 2 ' 5mA. (31 l c = 200 nA, V CE ■ 2V, f = 1kHz. (4) l c - 100mA, V c c ■ 10V. I B ■ » l g 2 • 10mA. (5) l c = 10mA, V ( 
l B 1 = l B 2 = 1mA. (61 f c = 100 |iA, V CE • 5V, f ■ 1kHz. (71 l c = 1mA, V CE - 10V, f = 200kHz. (81 l C = 1mA, V CE = 5V, f = 1kHz. (91 l c t 150mA, V cc i 6V, l B 1 ■ l B 2 ■ 15mA. (10) l c = 
V CE = 5V, f =1kHz. (111 l c = 150mA. V CC = 10V, l B 1 " l B 2 = 75mA. (121 l c = 300mA, V cc = 25V, l B 1 - l B 2 « 30mA. (13) l c = 10 wA, V CE " 5V, f = WB. (14) l C " 500mA, V CC ■ 25V, Igl 
l B 2 . 25mA. (15) l c - 10mA, V BE a 2V, l B 1 • 3mA, l B 2 = 1mA. (16) l C • 100mA, l B ' = 40mA, l B 2 = 20mA. 



S3U9S UOJ)3< 



Pro Electron Series 



CO 



Type 
No. 


Case 
Style 


V C ES" 
VCBO 
IVI 
Min 


VCEO 
IV) 
Min 


v EBO 

IVI 
Min 


ices - 

'CBO a V CB 
(nAI IVI 
Max 


hfe 

"fe e IC S V CE 
1 kHz* (mAI (V) 
Min Max 


v„ r ,o. T , V BEISATI 

fvj & ^BEIONI* @ >c 

Max (VI (mA ' 
Min Max 


c ob 

IpFI 


(MHz) @, C ., 

Mi„ u.. lmAI 
Ivltn Max 


'off 

Ins) 


NF 
IdBI 


Test 
Condition 


Process 
No 


BF259 


TO-39 


300 


300 


5 


50 250 


25 30 10 
6 12 7 


1.0 0.65 0.74' 30 


0.34 






3.5 


7 


48 


8F457 


TO-126 


160 


160 


5 


50 100 


25 30 10 
6 12 7 


1.0 0.65 0.74* 30 


0.34 






3.5 


7 


48 


BF458 


TO-126 


250 


250 


5 


50 200 


25 30 10 
6 12 7 


1.0 0.65 0.74* 30 


0.34 






3.5 


7 


48 


BF459 


TO-126 


300 


300 


5 


50 250 


25 30 10 
6 12 7 


1.0 0.65 0.74" 30 


0.34 






3.5 


7 


48 


BFX13 


TO-18 


20 


15 


5 


50 15 


10 100 2 
50 250 10 0.35 
18 12 


2 0.78 1 
0.25 0.7 0.9 10 
1.5 1.5 100 


6 


150 10 




10 


8 


66 


BFX29 


TO-5 


20 


15 


5 


50 50 


40 150 10 
50 50 10 
50 10 10 
40 110 
20 0.1 10 


0.4 1.3 150 
0.9 30 


12 


100 50 


150 




9 


63 


BFX30 


TO-5 


65 


65 


5 


50 50 


10 150 0.4 
20 50 0.4 
50 200 10 0.4 
40 1 0.4 


0.9 30 
1.3 150 


12 




290 




4 


63 


BFX37 


TO-18 


60 


60 


6 


20+ 50 


100 10 5 
100 1 5 
0.85 0.1 5 
70 300 0.01 5 


0.4 1 .0 50 
0.25 0.9 10 


6 


40 0,5 




3 


10 


62 


BFX65 


TO-18 


45 


45 


6 


10* 40 


1 00 10 5 
100 1 5 
100 0.1 5 
40 0.01 5 


0.25 0.9 10 


6.5 






3 


10 


62 


BFX84 


TO-39 


45 


45 


6 


500 100 


15 1A 10 
20 500 10 
30 150 10 
20 10 10 


0.15 1.2 10 
0.35 1.3 150 
1 .0 1 .5 500 
1.6 2.0 1A 


12 


50 50 


360 




9 


14 


BFX85 


TO-39 


45 


45 


6 


50 80 


1b 1A 10 
30 500 10 
70 150 10 
50 10 10 


0.15 1.2 10 
0.35 1 .3 1 50 
1 .0 1 .5 500 
1.6 2.0 1A 


12 


50 50 


360 




9 


14 


BFX86 


TO-39 


45 


45 


6 


50 30 


15 1A 10 
30 500 10 
70 150 10 
50 10 10 


0.15 1.2 10 
0.36 1 .3 1 50 
1 .0 1 .5 500 
1.6 2.0 1A 


12 


50 50 


360 




9 


14 



Type 
No 


Cue 
Style 


V CES" 
V C BO 
IV) 
Min 


v CEO 
IV) 
Min 


v EBO 
IVI 
Min 


ices* 

'CBO a V CB 
(nA) IV) 
Max 


hfe 

"fe e 'C & V CE 
1 kHz' (mA) (VI 

Min Mat 

'vim iviax 


Max 


C b 
IpFI 
Max 


IMHzl @, C A , 
... „ ImA) 
Mm Max 


'off 
Ins) 
Max 


NF 
IdB) 
Max 


Test 
Condition 


Process 
No 


8FX87 


TO-5 


45 


50 


Q 


50 40 


25 500 10 
40 150 10 
40 10 10 
40 1 10 


4 1.3 150 
0.9 30 


12 


100 50 


1 50 




9 


63 


BFX88 


TO-5 


45 


40 


6 


50 30 


26 500 10 
40 150 10 
40 10 10 
40 1 10 


0.4 1.3 150 
9 30 


12 


100 50 


150 




9 


63 


BFY72 


TO-5 


50 


28 


5 


20* 40 


15 500 1 
45 150 150 10 
30 10 10 
20 1 10 
15 0.1 10 


0.7 1.6 500 
0.25 12 150 


8 


250 60 


170 




12 


20 


BFY76 


TO- 18 


45 


45 


6 


20* 30 


140 1 5 
80 0.5 5 
30 200 0.01 5 


35 1 


6 


12 0.05 




4 


13 


07 


BSX21 


TO-18 


45 


80 


6 


40 jj A 120 


20 4 3 0.9" 4 | 60 4 









07 


BSX45-6 


TO-39 


80+ 


40 


7 


10* 60 


40 100 100 1 








650 




1 1 


14 


BSX45-10 


TO-39 


80* 


40 


7 


10* 60 


63 160 100 1 


2.0 1A 
1.0 500 


20 


60 50 


650 




11 


14 


BSX45-16 


TO-39 


80+ 


40 


7 


10* 60 


100 250 100 1 


2.0 1A 
1 .0 500 


20 


60 50 


650 




11 


14 


BSX46-6 


TO-39 


100+ 


60 


7 


10* 60 


40 100 100 1 


2.0 1A 
1 .0 500 


25 


60 50 


650 




11 


14 


3SX46-10 


TO-39 


100* 


60 


7 


10* 60 


63 160 100 1 


2.0 1A 
1 .0 500 


25 


60 50 


650 




1 1 


14 


8SX46-16 


TO-39 


100* 


60 


7 


10+ 60 


100 250 100 1 


2.0 1A 
1 .0 500 


26 


60 50 


650 




1 1 


14 


BSX48 


TO-18 


50 


25 


5 


120 50 


17 100 1 


1 .5 1 .5 500 


6 


250 30 


110 




14 


20 


BSX88 


TO-52 


40 


15 


5 


25 20 


30 120 10 1 
15 0.5 1 


0.4 0.72 0.8 10 


6 


300 10 


75 




15 


21 



TEST CONDITIONS: 

(1) l C = 200 >iA, V CE • 5V, f « 1kHz. (21 l C = 100mA, V cc = 20V, l B 1 - l B 2 = 5mA. (3) l c • 200 mA, V CE • 2V, f ■ 1kHz. (4) l c = 100mA, V CC - '0V. Id,' = l B 2 = 10mA. (5) l c = 10mA, V cc ■ 3V, 
l B ' - l B 2 » 1mA. (61 l C - 100 mA, V ce = 5V, f = 1kHz 17) l c - 1mA, V CE " 10V, f = 200kHz. (8) l c - 1mA, V CE ■ 5V, f = 1kHz. (9) i c * 150mA, V cc = 6V, l e 1 = Ig2 = 15mA. (10) l c ■ 200 jjA, 
V CE -5V.f-1kHz. (11) l C = 150mA. V CC = 10V. Ig1 - l B 2 = 75mA. (12) l C - 300mA. V cc - 25V, l B 1 = l B 2 - 30mA. (131 l c = 10(.A. V CE « 5V, f = WB. 1141 l c • 500mA, V cc = 25V, l B 1 -50mA, 
l B 2 - 25mA. 115) l c - 10mA, V BE « 2V, l B 1 • 3mA, l B 2 - 1mA. (16) l c - 100mA, l B ' - 40mA, l B 2 - 20mA. 



sauas uojpa|3 0Jd 



Pro Electron 



Type 
No. 


Case 
Style 


V CES* 
v CBO 
IV) 
Min 


VcEO 
IVI 
Min 


v EBO 

IV) 
Min 


'CES - 

'CBO « V CB 
InAl (VI 
Max 


hfe 

nfe e 'C & V CE 
1 kHz" ImAI IVI 
Min Max 


(VI ImAI 
Mm Max 


Cob 
InFI 
Max 


* T ic 

(MHzl @> , , 
<mA) 

Mm Max 


'oft 
Ins) 
Max 


NF 
IdB) 
Max 


Test 
Conditror 


BSY38 


TO-52 


20 


12 


5 


100 20 


15 45 100 1 
30 60 10 0.35 


0.6 1.5 100 
0.25 0.7 0.85 10 


5 


200 10 


45 




16 


BSY39 


TO-52 


20 


12 


5 


100 20 


20 70 100 1 
40 120 10 0.35 


0.6 1.5 100 
0.25 0.7 0.85 10 


5 


200 10 


45 




16 


BSY51 


TOS 


60 


25 


5 


100 30 


20 70 100 1 
40 120 150 10 


1 .0 1 .3 1 50 


9 


130 50 


45 




16 


BSY52 


TO-5 


60 


25 


5 


100 30 


20 70 100 1 
100 300 150 10 


1.0 1.3 150 


9 


130 50 


45 




16 


BSY53 


TO-5 


75 


30 


7 


10 60 


20 500 10 
40 120 150 10 
35 10 10 
20 0.1 10 


0.6 1.3 150 
2.0 500 


9 


150 50 


45 




16 


BSY54 


TO-5 


75 


30 


7 


10 60 


40 500 10 
100 300 150 10 
75 10 10 
35 0.1 10 


0.6 1.3 150 
2.0 500 


9 


150 50 


45 




16 


BSY95A 


TO-52 


20 


15 


5 


50 16 


50 200 10 0.35 
30 1 0.35 


0.35 0.67 0.87 10 


6 


200 10 


50 




16 



TEST CONDITIONS: 

(1) l c = 200 mA, V ce = 5V. f = 1kHz .121 l c => 100mA, V<x = 20V, Ib 1 = f B 2 = 5mA - < 3 I 'C - 200 juA, VcE - 2V. f = 1kHz. (4) l c = 100mA, V c c - 10V, Ig 1 = l g 2 » 10mA. (5) Ic ■ 10mA, V c 
I FJ 1 ■ l B 2 ' 1mA. (61 l c « 100 tiA, V CE ■ 5V, f ■ 1kHz. (7) l c = 1mA, V CE = 10V, f ■ 200kHz. (8) l c - 1mA, V CE - 5V.f • 1kHz. (91 l c » 150mA, V cc = 6V, l B 1 ■ l B 2 = 15mA. 110) l c = I 
V CE - 5V,f =1kHz. (11) l c . 150mA, V C C " 10V, l B ' = l B 2 = 75mA. (121 l c - 300mA, V cc f 25V, l B 1 ■ l g 2 = 30mA. (13) l c = 10 (jA, V CE ■ 5V, f = WB. (141 I c - 500mA, V cc = 25V, Ig' > 
l B 2 « 25mA. (151 l c = 10mA, V BE * 2V, 1 B 1 • 3mA, l B 2 - 1mA. (16) l c = 100mA, Ig 1 ' 40mA, l B 2 =20mA. 



JEIDA Series 



JEIDA SERIES 



Type 
No. 


Case 
Style 


V CES 
v CBO 
(VI 
Min 


VcEO 
IV) 
Min 


v EBO 
(V) 
Min 


'CES 
'CBO s 

InA) 

Max 


VCB 

IV) 


Hr-E 

1 kHz' 
Min Max 


ic 

(mA) 


& V C E 
IV) 


V CE(SATI 
(VI & 
Max 


Vbeisat) 

VbEIONI' a, 

IVI 
Min Max 


'c 

ImAI 


Cob 
(pF) 
Max 


»T 

IMHzl C 
Min Max 


ImA) 


•off 
Insl 
Max 


NF 
IdBI 
Max 


Test 
Condition 


Process 
No. 


2SA719 


TO-92 
(741 


30 


25 


5 


100 


20 


40 
60 


340 


500 
150 


10 
10 


0.6 


1.5 


500 




200 


50 








63 


2SA738 


TO-126 


25 


25 


5 


20 it A 


25 


20 
35 


320 


1 5A 
500 


2 
2 


1.0 


IB" 


2A 
1.5A 














77 


2SC313 


TO-72 
125) 


30 


19 


2 


500 


10 


35 


120 


10 


10 


1.0 




20 


2 


600 


10 








42 


2SC372 


TO-92 
174) 


35 


30 


4 


500 


18 


200 


400 


2 


12 


0.4 




10 


3.5 


80 


1 








04 


2SC380 


1 0-9? 
174) 


35 


30 


4 


500 


18 


40 


240 


2 


12 


1 .3 




10 


3.2 


400 


1 








23 


2SC385 


TO-92 
174) 


30 


15 


3 


500 


15 


20 




8 


3 








1.5 


600 


8 








43 


2SC387 


TO-92 
(741 


30 


16 


3 


500 


15 


20 




8 


3 


0.6 


1.2 


10 


1.5 


650 


8 








43 


2SC388 


TO-92 
(74) 


25 


25 


3 


25 


10 


20 


200 


12.5 


12.5 


0.2 


1.5 


15 


2 


300 


12.5 








46 


2SC394 


TO-92 
(74) 


35 


30 


4 


500 


18 


40 
16 


240 


2 

0.1 


12 
10 








3.5 


100 


1 








23 


2SC398 


TO-72 
(25) 


20 


20 


3 


50 


10 


20 


200 


4 


5 








0.5 


250 


4 




4.5 


1 


44 


2SC399 


TO-72 
(25) 


20 


20 


3 


50 


10 


20 


200 


4 


5 








0.5 


250 


4 




5.0 


1 


44 


2SC454 


TO-92 
(74) 


30 


30 


5 


500 


18 


100 


320 


2 


12 


0.5 


0.32" 


1 

2 


3.5 








25 


2 


27 


2SC458 


TO-92 
(74) 


30 


30 


5 


500 


18 


100 


500 


2 


12 


0.5 


0.75" 


1 

2 


3 5 








10 


2 


27 


2SC460 


TO-92 
(74) 


30 


30 


5 


500 


18 


35 


200 


2 


12 


1.1 


0.75' 


1 

2 


3.5 








6.5 


3 


27 


2SC461 


TO-92 
(74) 


30 


30 


5 


600 


18 


35 


200 


2 


12 


1.1 


0.75- 


2 
1 


3.5 












27 


2SC463 


TO-72 
(251 


35 


35 


4 


100 


10 


30 


150 


2 


10 


0.2 




10 


0.6 








4 


4 


44 


2SC464 


TO-72 
(25) 


30 


19 


2 


500 


10 


20' 




1 


6 


1.0 




20 


2.0 


600 


10 








42 


2SC466 


TO-72 
(25) 


30 


19 


2 


500 


10 


20' 




1 


6 


1.0 




20 


2.0 


600 


10 








42 


2SC49G 


TO-126 


70 


50 


5 


1 pA 


30 


40 


240 


50 


2 


0.8 


i.r 


500 


10 


50 


10 








14 


2SC535 


TO-92 
(74! 


30 


20 


4 


500 


10 




200 












1.2 


450 


1 




5.5 


5 


42 


2SC536 


TO-92 
(74! 


40 


30 


5 


1 mA 


35 


60 


960 


1 


6 




















04 




JEIDA SERIES (Continued) 



Type 
No. 


Case 
Style 


VCES' 
v CBO 

(VI 

Min 


VcEO 
(V) 
Min 


v EBO 
(V) 
Min 


'CES* 

'fl? « 
(nAI 

Max 


V C B 
(VI 


HFE 

h f" e 

1 kHz' 
Min Max 


A,* 
(mA) 


V C E 
(V) 


VCE(SAT) v«^J.- 
(vi & Vbe ° NI ® 
(V) 

Max mm, >. 

Mm Max 


to 

ImAI 


c ob 
(pFI 
Max 


«T 

(MHzl @ 
Min Max 


ic 

(mA) 


toff 
(nsl 
Max 


NF 
(dBI 
Max 


Test 
Condition 


Process 
No. 


2SC562 


TO-72 
(28) 


40 


30 


4 


1 m a 


10 


26 




4 


10 






0.22 


220 500 


4 








45 


2SC563 


TO-72 
(28) 


40 


25 


4 


10 ma 


40 


38 




7 


10 






0.32 


360 820 


5 








47 


2SC644 


TO -92 
(74) 


30 


25 


5 


1 MA 


40 


90 


700 


2 


5 














5 


6 


04 


2SC682 


TO-72 
(25) 


20 


20 


3 


100 


10 


20 


200 


2 


10 








400 


2 








44 


2SC683 


TO-72 
(25) 


20 


20 


3 


100 


10 


20 


200 


2 


10 






0.6 


400 


2 




4 


4 


44 


2SC684 


TO-92 
(74) 


30 


19 


2 






40 




10 


10 


1.0 


20 


2 


900 


10 








42 


2SC717 


TO-92 
(74) 


30 


19 


2 


500 


10 


40 




1 


6 


1.0 


20 


2 


600 


10 








43 


2SC733 


TO-92 
(74) 


35 


30 


5 


100 


18 


70 


700 


2 


6 


0.3 


10 




80 


1 




10 


2 I 


04 


2SC735 


TO-92 
(74) 


35 


30 


5 


100 


18 


25 
70 


400 


400 
100 


5 
1 


0.25 


100 


















TO-72 
(25) 


30 


20 


3 






25 




2 


1 








den QKn 
4ou you 










41 


2SC762 


TO-72 
(25) 


30 


20 


3 






22 




2 


1 o 








450 770 


2 








41 


2SC784 


TO-92 
(74) 


40 


30 


4 


500 




18 


25 


140 


1 


6 




0.9 








6 


5 


42 


2SC785 


TO-92 
(74) 


40 


30 


4 


500 


18 


25 


140 


1 


6 






0.9 












42 


2SC828 


TO-92 
(74) 


30 


25 


5 


1 mA 


10 


65 


700 


2 


5 


















04 


2SC829 


TO-92 


30 


20 


5 


1 mA 


10 


40 


500 


1 


10 






1.6 












23 


(74) 
























2SC947 


TO-72 
(25I 


25 


20 


3 






10 




2 


10 






0.3 


400 1000 


3 








41 








































42 


2SC1047 


TO-92 
(74) 


30 


20 


3 






40 


500 


1 


6 






1.0 


450 


1 








2SC1117 


TO-72 
(25) 


20 


20 


3 






60 


320 


2 


10 






45 


600 


2 




7 


4 


41 



TEST CONDITIONS: 

(11 V AG = 1.4V, V cc = 12V, f = 200MHz. (2) l c = 0.1mA, V CE = 6V, f = 1kHz. (3) l c = 2mA, V CE = 6V, f = 1MHz. (41 l C = 2mA, V CC - 10V, f = 200MHz. (5) l C = 1mA, V CE = 6V, f = 100MHz. 
I6I I C = 0.2mA, V CE = 5V.f = 0.1kHz. (7| l c = 1mA, V CE = 10V, f = 5MHz. 



JElDi 




JEIDA SERIES (Continued) 



Type 
No. 


Case 
Style 


VCES- 
v CBO 

(V) 

Min 


v CEO 
(V) 
Min 


v EBO 
(V) 
Min 


'CES* 

'CBO s V CB 
In A) (VI 
Max 


"FE 

hf» lc - V c e 
1 kHi» InAI (VI 
Min Max 


(V) (mA) 
Mm Max 


Cob 
(pF) 
Max 


* T li 
Mm Max 


•off 
(ns) 
Max 


NF 
(dB) 
Max 


Te 
Cond 


2SC1205 


TO-92 
(74! 


30 


30 


5 


500 18 


35 200 2 12 


1.1 1 
0.75" 2 


3.5 










2SC1215 


TO-92 
(74! 


30 


20 


3 


100 10 


25 2 10 


0.72' 2 


1.5 


650 10 








2SC1306 


TO-220 


65 




4 


10 mA 40 


30 150 500 10 


0.6 1A 


30 


200 150 








2SC1335" 


TO-92 
(74) 


30 


30 


5 


500 18 


160 1200 2 12 


0.5 10 
0.75' 2 


3.5 






6 


2 


2SC1342 


TO-92 
(74) 


30 


20 


4 


500 10 


35 200 1 6 


1.2 10 


1.5 


150 1 




8.5 


5 


2SC1344 


TO-92 
(74) 


30 


30 


5 


500 18 


160 1200 2 12 


0.5 0.75* 2 
10 


3.5 






8 


2 


2SC1359 


TO-92 
(74) 


30 


20 


5 


100 10 


50 220 1 10 




1.5 


150 1 




4 


7 


2SC1678 


TO-220 


65 




4 


10 mA 30 


15 500 5 
10 1.5A 5 


1 .0 500 


45 


100 100 








2SC1318' 


TO-92 
(74) 


60 


50 


5 


100 20 


40 500 10 
60 340 15.0 10 


0.6 1 .5 500 




200 50 








CS901 1 


TO-92 
(72) 




18 


3 


50 18 


29 280 1 5 














CS9012 


TO-92 
I72I 




25 


3 




64 202 5 1 


1 .0 250 












CS9013 


TO-92 
(72) 




25 


3 




64 202 5 1 


1.0 250 












CS9014 


TO-92 
(72) 




18 


3 


50 18 


60 1000 1 5 


0.5 1 












CS9015 


TO-92 
(72) 




18 


3 


50 18 


60 1000 1 5 


0.5 1 




































CS9016 


TO-92 
(72) 




20 


3 


50 18 


29 146 1 5 


3 1 10 












CS9018 


TO-92 
I72I 




12 


2 


50 15 


29 198 1 5 


0.6 10 













TEST CONDITIONS: 

ID V AG - 1.4V, V CC = 12V, f - 200MHz. (2) l c = 0.1mA, V CE = 6V, f = 1kHz. (31 l c = 2mA, V CE = 6V, f = 1MHz. (41 l C = 2mA, V cc = 10V, f = 200MHz. (5) l C = 1mA, V CE - 6V. f 
(6) l c = 0.2mA, V CE « 5V,f = 0.1kHz. I7| l c i l m A, V CE = 10V, f - 5MHz. 



£N National 

J£d Semiconductor 



NA/NB TRANSISTOR SERIES SELECTION GUIDE 

GENERAL DESCRIPTION 

The NA series of transistors are complementary power series which provide minimum collector saturation voltages at low drive 
conditions and feature matched HFE, guaranteed Vbe (° n ). Vbe (sat). Vce ' sat '' etc ' ' or est ' mat ' n 9 circuit performance at 
limit conditions. They are ideal for use with the NB series in complementary audio power amplifier applications. In addition, 
the collector breakdown voltages range from 20 to 60 Volts, which allows great flexibility in other power applications, such 
as converters/inverters, servo amplifiers, etc. The NB series of transistors are complementary general-purpose devices which 
cover a wide range of applications from low-noise equalizer preamplifiers to 1.5 Amp class B drivers. This series provides low 
leakage, low V C e (sat), high HFE and three different types of collector breakdown voltages (35, 50 and 65 Volts) for multi- 
purpose usage and total flexibility. 



NA - APPLICATIONS 

• 0.1 to 25 Watts fully complementary 
audio power amplifiers 

• Converters/Inverters 

• Power control circuits 

• Switching/linear regulators 

• High current switching circuits 

• Servo amplifiers 



NB - APPLICATIONS 

• Low noise equalizer preamplifiers 

• Class A general purpose amplifiers 

• Class B drivers 

• Oscillators 

• Control/Switching circuits 

• Display/line drivers 

• Servo amplifiers 



NA SERIES - - COMPLEMENTARY POWER TRANSISTORS 



device types end retings 



PART # 


AVAILABLE 


Vce (max) 


lc (mix) 






NPN 


PNP 


PACKAGES 


VOLTS 


AMPS 


HFE 


DESCRIPTION 


NA01 


NA02 


TO-92 


20 


0.8 


Matched 


0.8A complementary power transistors 


NA11 


NA12 


TO-92 


20 


1.0 


Matched 


1.0A complementary power transistors 


NA21 


NA22 


TO-92, TO-92 PLUS 


20 


1.5 


Matched 


1 .5A complementary power transistors 


NA31 


NA32 


TO-92 PLUS, TO-202 


30 


2.0 


Matched 


2.0A complementary power transistors 


NA41 


NA42 


TO-1 26, TO-220 


30 


2.5 


Guaranteed min 


2.5A complementary power transistors 


NA51 


NA52 


TO-1 26. TO-220 


45 


3.5 


Guaranteed min 


3.5A complementary power transistors 


NA61 


NA62 


TO-1 26, TO-220 


45 


4.5 


Guaranteed min 


4.5A complementary power transistors 


NA71 


NA72 


TO-1 26, TO-220 


60 


3.5 


Guaranteed min 


3.5A complementary power transistors 



NB SERIES - - GENERAL PURPOSE COMPLEMENTARY TRANSISTORS 
device types and ratings 



PART # 


AVAILABLE 


Vce (max) 


IC (max! 


V C E (sat) 




NPN 


PNP 


PACKAGES 


VOLTS 


AMPS 


max 


Ic/lb ImAI 


DESCRIPTION 


NB011 


NB021 


TO-92 


35 


0.03 


0.3 


10/0.5 


30mA general purpose transistors 


NB012 


NB022 


TO-92 


50 


0.03 


0.3 


10/0.5 


30mA general purpose transistors 


NB013 


NB023 


TO-92 


35 


0.03 


0.3 


10/0.5 


30mA low noise transistors 


NB014 


NB024 


TO-92 


50 


0.03 


0.3 


10/0.5 


30mA low noise transistors 


NB111 


NB121 


TO-92 


35 


0.1 


0.3 


40/0.8 


1 00mA general purpose transistors 


NB112 


NB122 


TO-92 


50 


0.1 


0.3 


40/0.8 


100mA general purpose transistors 


NB113 


NB123 


TO-92 


65 


0.1 


0.3 


40/0.8 


100mA general purpose transistors 


NB211 


NB221 


TO-92, TO-92 PLUS 


35 


0.5 


0.4 


100/2 


500mA medium current drivers 


NB212 


NB222 


TO-92, TO-92 PLUS 


50 


0.5 


0.4 


100/2 


500mA medium current drivers 


NB213 


NB223 


TO-92, TO-92 PLUS 


65 


0.5 


0.4 


100/2 


500mA medium current drivers 


NB311 


NB321 


TO-92. TO-92 PLUS, TO-202 


35 


1.5 


0.5 


300/10 


1 .5A complementary power drivers 


NB312 


NB322 


TO-92, TO-92 PLUS, TO-202 


50 


1.5 


0.5 


300/10 


1 -5A complementary power drivers 


NB313 


NB323 


TO-92, TO-92 PLUS, TO-202 


65 


1.5 


0.5 


300/10 


1 ,5A complementary power drivers 



5-2 



AUDIO OUTPUT POWER - - Battery operated "OTL" amplifiers 



OPERATING CONDITIONS 


(1) OUTPUT POWER 

minimum 


# 10% THO 

typical 


RECOMMENDED 

OUTPUT DEVICES 


RECOMMENDED 
DRIVER DEVICES 


6 Volts/SH single-bootstrapping 

fi Ui-Ji c/R O «ir»nlo-Hi-ii-it<trar»ninn 

6 Votts/4ft single-bootstrapping 


380 mW 
680 mW 


380 mW 
480 mW 

860 mW 


NA01 / NA02 
IMA1 1 / NA12 
NA21 / NA22 


NB111 /NB121 
NB111 / NB121 
IMB111 /NB121 


6 Volts/4ftdouble-oootstrapplng 
9 Volts/8ft single-bootstrapping 
9 Volts/4 ft single-bootstrapping 


920 mW 
800 mW 
1.4 W 


LOW 
1 .0 w 
1.8 W 


NA21 / NA22 

MA 14 1 H'AIO 

IMAil / NA/^ 
NA21 / NA22 


NB111 NB121 

Kl O 1 1 1 / MQ1 *? 1 
V* D 1 11 / ri B 1 t. I 

NB111 /NB121 


9 Volts /4 £2 double-bootstrapping 
14 Volts iBft single-bootstrapping 
14 Votts/4 ft single-bootstrapping 


1.9 W 
2.0 W 
3.8 W 


2.2 W 

2.3 W 
4.2 W 


NA21 / NA22 
NA21 / NA22 
NA31 / NA32 

' ' 


NB111 / NB121 
NB111 /NB121 
NB211 /NB221 


AUDIO OUTPUT POWER - 


— AC operated "OTL" amplifiers 







0) 
3 

</> 

55' 



C/> 
CD 

c5" 

(/> 

(/> 

CD 

o 

If 

5' 

o 

c 

mm* 

a 

CD 



OUTPUT POWER (mini 


LOAD 


(21 REQUIRED SUPPLY 


RECOMMENDED 


RECOMMENDED 


e 10% THO 


IMPEDENCE 


VOLTAGE (mini 


OUTPUT DEVICES 


DRIVER DEVICES 


3 Watts 


8ft 


15 


NA31 / NA32 


NB211 /NB221 


4 Watts 


8ft 


17 


NA31 / NA32 


NB211 / NB221 


6 Watts 


8ft 


20 


NA41 / NA42 


NB211 /NB221 


8 Watts 


eft 


23 


NASI / NAS2 


NB212/NB222 


12 Watts 


an 


27 


NA51 / NA52 


NB312/NB322 


15 Watts 


an 


32 


NA71 / NA72 

' 


NB312/NB322 


18 Watts 


an 


36 


NA71/NA72 


NB313/NB323 


24 Watts 


an 


40 


NA71 /NA72 


NB313/NB323 


3 Watts 


4ft 


11 


NA31 / NA32 


NB211 / NB221 


4 Watts 


4ft 


13 


NA31 /NA32 




6 Watts 


4ft 


16 


NA41 / NA42 


1MBZ i i / Not* i 


8 Watts 


4ft 


18 


NA51 / NA52 


NB211 /NB221 


12 Watts 


4ft 


20 


NA51 / NA52 


NB311 /NB321 


IS Watts 


4ft 


23 


NA61 / NA62 


NB312/NB322 


18 Watts 


4ft 


26 


NA61 / NA62 


NB312 / NB322 


24 Watts 


4ft 


30 


NA61 / NA62 


NB312/NB322 



NOTES : (1) Minimum Output Power tevels shown are obtained by considering transistor parameter variations only, and do not include 
external component value tolerances. 
(2) Voltage drops across emitter ballest resistors of the output devices are not included as part of the minimum required supply 
voltages; voltages specified are dc and under full load condition. 



PACKAGE OUTLINES 



TO-92 TO-92 PLUS 



TO-202 



TO-126 



TO-220 







5 3 




National 
Semiconductor 



NA01 (NPN) goOmA complementary power transistors 
IMA021PNP) 



features 

■ 20 Volt/800 mA Amp rating 

■ Low Vce (sat) and Vbe (sat) characteristics at 
l c = 500 mA. I B = 50 mA 

■ Guaranteed V BE (on) characteristics at low 
current for stable biasing 

■ Matched HFE groupings for complementary applications 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ 0.2 to 1 Watt audio power amplifiers 

■ Medium power switching circuits 
» Converter/Inverter circuits 

■ Circuits for toys 



package and lead coding 



TO-92 




PACKAGE CODE 




LEAD 


T092 


1 


2 


3 


E 


E 


B 


C 


F 


E 


C 


B 


H 


C 


B 


E 



maximum ratings 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 


VcEO 


20 


Vdc 


Collector-Base Voltage 


V CB 


25 


Vdc 


Emitter-Base Voltage 


V EB 


5.0 


Vdc 


Collector Current (continuous) 


lc (max) 


800 


mA 


Power Dissipation (T A = 25°C) 


Pd 






TO-92 




0.6 


W 


Power Dissipation (Tp = 25°C) 


Pd 






TO-92 




1.0 


W 


Thermal Resistance 








TO-92 


*JA 


208 


°C/W 




0JC 


125 


°CAV 


Temperature, Junction and Storage 


Tj, Tstg 


-55to+ 150 


°C 



3 ordering information 



POLARITY 



"1" for NPN 
"2" for PNP 



J 

NA0XXX 



PACKAGE/LEAD CODE 

refer to (Tj 

HFE GROUPING 

refer to [5"] 



54 



electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


RV CE0 


Collector-Emitter 
Sustaining Voltage 


l c = 1 mA 


20 






V 


B^CBO 


Collector-Base 
Breakdown Voltage 


l c = 100nA 


25 






V 


bv E bo 


Emitter-Base 
Breakdown Voltage 


l E = 10/jA 


5 






V 


iceo 


Collector-Emitter 
Leakage Current 


V ce ■ 15V 






100 


MA 


ICBO 


Collector-Base 
Leakage Current 


V CB = 20V 






1 


MA 


V B e (on) 


Base-Emitter Voltage 


l c = 10 mA, V CE =3V 


630 


680 


730 


mV 


V BE (sat) 


Base-Emitter 
Saturation Voltage 


l c = 400 mA, l B « 10 mA 




0.9 


1.0 


V 


V ce (sat) 


Collector Emitter 
Saturation Voltage 


l c ■ 400 mA, l B « 10 mA 




0.3 


0.5 


V 


Cob 


Collector Output Capacitance 
NPN types 
PNP types 


V CB * 10V, f = 1 MHz 




4.5 
7.0 




pF 
pF 


ft 


Current Gain Bandwidth 
Product 


l c = 100 mA, V CE ■ 3V 


50 


200 




MHz 



5 HFE groupings 



6 physical dimensions 

TO-92 



p7~[ max power dissipation 




s 

i 



1.0 

08 
0.6 
04 

0.2 




GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


G 


DC Current Gain 


l c = 100 mA, V CE = 3V 


68 


85 


110 


1:1.6 


H 


DC Current Gain 


l c = 100 mA, V CE * 3V 


100 


127 


160 


1:1.6 


1 

J 


DC Current Gain 


l c - 100 mA, V C E =3V 


140 


180 


240 


1:1.6 


DC Current Gain 


l c ■ 100 mA, V CE = 3V 


200 


260 


350 


1:1.6 


X 


DC Current Gain 


l c = 100 mA, V C e = 3V 


30 


58 


110 


1:3.5 


Y 


DC Current Gain 


l c = 100 mA, Vce = 3V 


100 


190 


350 


1:3.5 



x 

< 



25 50 75 100 1 26 150 175 200 
TEMPERATURE (Tl - - °C 

























T 


= CASE TEMPERATURE 

1 1 1 1 










,T = 


AMBIENT TEMPERATt 


RE 

























































5-5 



> 

o 



> 
o 

jo 

Z 



8 



typical performance characteristics 



< 

i 



SOA 

dc safe operating area 



(A) 



0.5 

0.2 
0.1 
0.05 

0.02 
0.01 

















Tc * 25°C 




















00 m 


A 








































































































































































1 





0.1 0.2 0.5 1 2 5 10 20 30 

COLLECTOR TO EMITTER VOLTAGE <V C E> - -V 

HFE1/HFE2 

current gain linearity ratio (C) 



0.5 
0.3 
0.2 



















VCE 


» 1V 


























PN] 





































































































0.01 0.02 0.05 0.1 0.2 0.5 0.8 1 2 

COLLECTOR CURRENT dc) - - A 



< 



< 

o 



s 



o 
N 



5 



Cob 

collector to base capacitance 



(B) 































EMI 


TTER 


-OF 


































"npaT"" 



























































































0.1 0.2 0.5 1 2 3 6 7 10 

COLLECTOR TO BASE VOLTAGE (V C B> - - V 



HFE1/HFE2 

current gain linearity ratio 



(D) 



1 

0.5 

0.3 
0.2 



















VCE = 10V 








































-/V 


Hi 

























































































0.01 0.02 0.05 0.1 0.2 0.6 0.8 1 

COLLECTOR CURRENT dc) A 



> 

UJ 

< 
h 
_' 
o 

> 

UJ 

N 
N 
s 

UJ 

o 
I— 
a: 
O 



VcE(sat) 

collector to emitter saturation voltage 



IE) 



2 
1 

0.5 

0.2 
0.1 
0.05 

0.02 
0.01 















TESTTIME = 300juS 










































































































— HF 


; = 1 


ji 















































































0.01 0.02 0.05 0.1 0.2 0.5 0.8 1 

COLLECTOR CURRENT (l C )--A 



> 

I 



< 



> 

OC 
UJ 

t 



O 0.5 



VBE(sat) 















TEST TIME = 300juS 






































J— ■ 



















































0.01 0.02 0.05 0.1 0.2 0.5 0.8 1 2 

COLLECTOR CURRENT (l C ) - - A 



9 typical applications 




Q1 NB111EH/J Q3 NA01EG/J 
Q2 NR001E Q4 NA01EG/J 

Figure A. 380mW 6V/80 OTL Amplifier 




01 NB111EH/J 
Q2 NR001E 



Q3 NA01EG/J 
Q4 NA01EG/J 



Figure B. 650mW 12V /25Q. OTL Amplifier 



JT 
I 



INPUT 
O— 



3 



V CC - 9V 

o 



1201 J : 8S2 
TRANSFORMER 



3C 



Q1 NB111EH/J Q2 NA01EG/J Q3 NA01EG/J 
Figure C. 1 .2W Audio Amplifier 



TOROID 
TRANSFORMER 




Ql NAOIEX 
Figure D. Typical Converter Circuit 




• TOKO (/CAN 
1A478 YEZ 




Ql NB021EY 
Q2 NB021EY 



Q3 NB021EY 
Q4 NAOIEX 



Figure E. Touch-on /T ouch -off Electronic Switch 



Ql NAOIEX 
Figure F. 40KHz Ultrasonic Transmitter 



NA11 (NPIM) 1 a complementary power transistors 
NA12(PNP) 



features 

■ 20 Volt/1 Amp rating 

■ Low V c e (sat) and Vbe (sat) characteristics at 
l c » 400 mA, l B = 10 mA 

■ Guaranteed V BE (on) characteristics at low 
current for stable biasing 

■ Matched HFE groupings for complementary applications 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ 0.2 to 1 Watt audio power amplifiers 

■ Medium power switching circuits 

■ Converter/Inverter circuits 

■ Circuits for toys 



package and lead coding 

TO-92 




PACKAGE CODE 




LEAD 


TO-92 


1 


2 


3 


E 


E 


B 


C 


F 


E 


C 


B 


H 


C 


B 


E 



maximum ratings 



PARAMETER 

1 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 


VCEO 


20 


V 0C 


Collector-Base Voltage 


V CB 


25 


Vdc 


Emitter-Base Voltage 


Veb 


5.0 


Vdc 


Collector Current (continuous) 


lc (max) 


1.0 


A 


Power Dissipation (T A = 25°C) 


Pd 






TO-92 




0.6 


W 


Power Dissipation (Tc = 25°C) 


Pd 






TO-92 




1.0 


W 


Thermal Resistance 








TO-92 


0JA 


208 


"CAN 




0JC 


125 


°C/W 


Temperature, Junction and Storage 


Tj. Tstg 


-55 to + 150 


°C 



3 ordering information 



POLARITY 



"V'forNPN 
"2" for PNP 



r 

NA1XXX 

L 



PACKAGE/LEAD CODE 

refer to jT] 



HFE GROUPING 

refer to [§] 



S 8 



electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVcEO 


Collector-Emitter 
Sustaining Voltage 


l c = 1 mA 


20 






V 


BV C BO 


Collector-Base 
Breakdown Voltage 


l c = IOOuA 


25 






V 


bVebo 


Emitter-Base 
Breakdown Voltage 


l E = 10uA 


5 






V 


ICEO 


Collector-Emitter 
Leakage Current 


V CE = 15V 






100 


"A 


ICBO 


Collector-Base 
Leakage Current 


V CB * 20V 






1 


MA 


V BE (on) 


Base-Emitter Voltage 


l c = 10 mA, V CE = 3V 


630 


680 


730 


mV 


V BE (sat) 


Base-Emitter 
Saturation Voltage 


l c = 500 mA, l B = 50 mA 




0.95 


1.5 


V 


V CE (sat) 


Collector-Emitter 
Saturation Voltage 


l c " 500 mA, l B = 50 mA 




0.2 


0.5 


V 


Cob 


Collector Output Capacitance 
NPN types 
PNP types 


V CB = 10V, f = 1 MHz 




4.5 
7.0 




pF 
pF 


ft 


Current Gain Bandwidth 
Product 


l c = 100 mA, V CE = 3V 


50 


200 




MHz 



5 HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


G 


DC Current Gain 


lc = 


100mA,V CE =3V 


68 


85 


110 


1 


1.6 


H 


DC Current Gain 


"c = 


100 mA, V CE = 3V 


100 


127 


160 


1 


1.6 


1 


DC Current Gain 


! c - 


100 mA, V CE =3V 


140 


180 


240 


1 


1.6 


J 


DC Current Gain 


lc- 


100 mA, V CE = 3V 


200 


260 


350 


1 


1.6 


X 


DC Current Gain 


"c = 


100mA,V CE =3V 


30 


58 


110 


1 


3.5 


Y 


DC Current Gain 


lc = 


100 mA, V CE = 3V 


100 


190 


350 


1 


3.5 



physical dimensions 

TO-92 



p7~| max power dissipation 




i 
i 

ra 

E 
□ 

o 
I- 
< 



S 

o 

Q_ 

s 

X 



























CASE TEMPERATURE 














I I 
AMBIENT TEMP 


:RAT 


JRE 

























































2S 50 75 100 125 150 175 200 
TEMPERATURE (T) °C 



5-9 



8 



typical performance characteristics 



< 

i 
i 



SOA 

dc safe operating area 



(A) 



2 
1 

0.5 

0.2 
0.1 
0.05 

0.02 
0.01 

















T C = 25°C 


















1 fi 


mp 

















































































































































































0.1 0.2 0.5 1 2 5 10 20 30 

COLLECTOR TO EMITTER VOLTAGE (Vqe) - -V 



HFE1/HFE2 

current gain linearity ratio 



IC) 

















V C E = 1V 
















p 


NP- 




















NPN 












fi 









































































0.5 
0.3 
0.2 
0.1 

0.01 0.02 0.05 0.1 0.2 0.5 0.8 1 2 

COLLECTOR CURRENT (If;) A 



< 

Q_ 
< 



o 



o 
H 

< 



Cob 

collector to base capacitance 



(B) 





























tmi 


I IbH 


-Uh 


CN 



















































































3 o.i 



COLLECTOR TO BASE VO LTAGE (V C B> - - V 



HFE1/HFE2 

current gain linearity ratio 



(D) 



0.3 
0.2 

0.1 

















VCE * 10V 


















•PN 


> 




















^P 


H 

















































































0.01 0.02 0.05 0.1 0.2 0.5 0.8 1 2 

COLLECTOR CURRENT (Ifj) A 



> 
I 
I 



< 

h- 
■J 
O 
> 

az 
t 



VcE(sat) 

collector to emitter saturation voltage 



(E) 



0.5 

0.2 
0.1 
0.05 

0.02 
0.01 















TEST TIME ■ 300pS 














































































































































































I 



















0.01 0.02 0.05 0.1 0.2 0.5 0.8 1 

COLLECTOR CURRENT (Irj) -- A 



VBE(sat) 

base to emitter saturation voltage 



(F) 



0.5 
0.3 















TEST TIME = 300mS 


































-VJFEJ 


3 






















"50" 

































0.01 0.02 0.05 0.1 0.2 0.5 0.8 1 

COLLECTOR CURRENT Oc) — A 



5-10 



9 typical applications 




INPUT x , 




Q1 NB111EH/J 
Q2 NR001E 



Q3 NA11EG/J 
Q4 NA12EG/J 



Figure A. 380mW 6V/8S2 OTL Amplifier 



Q1 NB111EH/J 
Q2 NftOOlE 



Q3 NA11EG/J 
Q4 NA12EG/J 



Figure B. 6S0mW 1 2V/25T2 OTL Amplifier 



r 
T 



INPUT 
O — 



s 



12012 : 8S2 
TRANSFORMER 



2 

; 

3 







i 













4 



Q1 NB111EH/J Q2 NAUEG/J Q3 NA1IEG/J 
Figure C. 1 .2W Audio Amplifier 



Q1 NA11EX Q2 NB111EY 

Figure D. Typical Converter Circuit 




40KHi 
TRANSDUCES 




Ql NB021EY 
Q2 NB021EY 



Q3 NB021EY 
04 NA11EX 



Ql NA11EX 



Figure E. Touch-on/Touch-off Electronic Switch 



Figure F. 40KHz Ultrasonic Transmitter 



NA21(NPN) 
NA22(PNP) 



1.5Amp complementary power transistors 



features 

■ 20 Volt/1 .5 Amp rating 

■ 1.2 Watts practical power dissipation (TO-92 PLUSTM) 

■ Low V CE (sat) and V BE (sat) characteristics at 
l c = 700mA, l B = 14 mA 

■ Guaranteed V BE (on) characteristics at small 
current for stable biasing 

■ Matched HFE groupings for complementary applications 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ 0.5 — 2 Watt audio power amplifiers 

■ Medium power switching circuits 

■ Converter/Inverter circuits 

■ Toy circuits 



package and lead coding 

TO-92 PLUS ™ 



TO-92 




PACKAGE CODE 


LEAD 






TO-92 








TO-92 


PLUS 


1 


2 


3 


E 


X 


E 


B 


c 


F 


Y 


E 


C 


B 




Z 


B 


C 


E 


H 




C 


B 


E 



maximum ratings 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 


V CE 


20 


V D c 


Collector-Base Voltage 


V CB 


25 


Vdc 


Emitter-Base Voltage 


Veb 


5.0 


Vdc 


Collector Current (continuous) 


lc (max) 


1.5 


A 


Power Dissipation (T A = 25°C) 


Pd 






TO-92 




0.6 


w 


TO-92 PLUS 




0.75 


w 


Power Dissipation (Tc = 25°C) 


Pd 






T092 




1.0 


w 


TO 92 PLUS 




2.5 


w 


Thermal Resistance 








TO-92 


9 JA 16 JC 


208/1 25 


°C/W 


TO-92 PLUS 


0JA /fljC 


167/50 


°c/w 


Temperature, Junction and Storage 


T i, T stg 


-55 to + 150 


°c 




1 


' 





ordering information 



'V'forNPN 



-POLARITY ... 



2" for PNP 



\ 

N A 2 XX X 

L 



PACKAGE/LEAD CODE 

refer to \T\ 

-HFE GROUPING 

refer to \b} 



5-12 



[4~| electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


□w 

BVceO 


L-oi lector- emitter 
Sustaining Voltage 


\q = 1 mA 










BV CB0 


L.oitector-oase 
Breakdown Voltage 


'C IUUJHM 


25 










Emitter-Base 
Breakdown Voltage 


I E = 1 /jA 


c 
O 






w 

V 


•ceo 


Collector-Emitter 
Leakage Current 


V C6 = 15V 






100 


ma 


ICBO 


Collector-Base 
Leakage Current 


V CB = 20V 






1 


ma 


V BE (on) 


Base-Emitter Voltage 


l c = 10mA, V CE = 3V 


630 


680 


730 


mV 


Vbe (sat) 


Base-Emitter 
Saturation Voltage 


l c = 700 mA, l B = 14mA 




0.9 


1.0 


V 




Col lector- Emitter 
Saturation Voltage 

NPN types 
PNP types 


| c = 700 mA, Ib = 14 mA 




0.35 
0.65 


0.5 
1 


V 
V 


Cob 


Collector Output Capacitance 
NPN types 
PNP types 


V CB ■ 10V, f = 1 MHz 




0.45 
0.7 




pF 
pF 


h 


Current Gain Bandwidth 
Product 


lc = 100 mA, V C E = 3V 


50 


200 




MHz 



5 HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


G 


DC Current Gain 


"c = 


100 mA, V CE = 3V 


68 


85 


110 


1 


1.6 


H 


DC Current Gain 


lc = 


100 mA, V CE = 3V 


100 


127 


160 


1 


1.6 


I 


DC Current Gain 


Ic- 


100 mA, V C E = 3V 


140 


180 


240 


1 


1.6 


i 


DC Current Gain 


ic- 


100 mA, V C e =3V 


200 


260 


350 


1 


1.6 


x 


DC Current Gain 


le* 


100 mA, V C e = 3V 


30 


58 


110 


1 


3.5 


Y 


DC Current Gain 


ic = 


100 mA, V CE = 3V 


100 


190 


350 


1 


3.5 



6 physical dimensions 



S 



heatsink information 



TO-92 PLUS 



TO-92 




□ 



4^T 





"T-T" 



0.030 
STEEL SHEET 



TO-92 PLUS package with heat- 
sink shown on right permits 1.6 
Watts power dissipation and 
combined Thermal Resistance 
0JA = 78°C/W. If used without 
heatsink and PCB land area at 
collector lead > 1 sq. inch, 
P D = 1.2W. 



5-13 



8 typical performance characteristics 



SOA 

dc safe operating area 



(A) 



< 

1 




1 


2 






t- 


1 


UJ 


0.5 


cc 




CC 




=> 

:J 


0.2 


a: 

a 


0.1 


K- 




O 

ui 


0.05 


—1 




..J 
o 


0.02 








0.01 

















Tc • 25°C 













































































































































































































).1 0.2 0.5 1 2 5 10 20 30 

COLLECTOR TO EMITTER VOLTAGE (V C £) - - V 



HFE1/HFE2 

current gain linearity ratio 



(C) 



< 



2 
1 

).5 
0.3 
0.2 



0.1 

















VCE = 1V 






















p 


m 































"S 





























































0.01 0.02 0.05 1 0.2 0.5 1 2 3 
COLLECTOR CURRENT He) - - A 



> 

I 



VCE(sat) 

collector to emitter saturation voltage 



(E) 



CD 
< 
I- 
I 

O 
> 



1 

0.5 

0.2 
0.1 
0.05 

0.02 
0.01 













TEST TIME - 300juS 










































L 






































































vo — 
















w 

































0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 
COLLECTOR CURRENT 0c> - - A 



> 
1 

1 



s 

UJ 

o 
1- 

Ul 



Cob 

collector to base capacitance 



(8) 



EMITTER-OPEN 



i 
< 




0.1 0.2 0.5 1 2 3 5 7 10 

COLLECTOR TO BASE VOLTAGE (Vcb) - - V 



HFE1/HFE2 

current gain linearity ratio 



(D) 












< 




at 

UI 


2 


U_ 
X 


1 


L?. 




tii 




r«.> 




~~* 


0.5 


% 

cz 


0.3 









0.2 




0.1 

















VCE= 10V 






















P 


w 












/ 






NPN 













































































0.01 0.02 0.05 0.1 0.2 0.6 1 2 3 
COLLECTOR CURRENT Oc) A 



VBE(sat) 

base to emitter saturation voltage 



(F) 



0.5 
0.3 













TEST TIME = 300mS 






























1 


«* 




















Hf 


: = 5 


1 



























0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 
COLLECTOR CURRENT dc) - - A 



9 typical applications 




Q1 NB011EY Q3 NR001E QS NA22EG/J 
Q2 NB111EH/JQ4 NA2IEG/J 

Figure A. 700mW 6V/4H OTL Amplifier 



Q1 NB011EY Q3 NR001E Q5 NA21 EG/J 
Q2 NB011EY 04 NB111EYQ6 NA22EG/J 

Figure B. 950mW 6V/4J2 OTL Amplifier 




Q1 NB011EY Q3 NR001E Q5 NA21 EG/J 
02 NB011EY Q4 NB111EYQ6 NA22EG/J 

Figure C. 2W 9V/4H OTL Amplifier 




Q1 NB011EY 03 NR001E Q5 NA22EG/J 
Q2 NB111EH/JQ4 NA21EG/J 

Figure D. 2.2W 14V/8fi OTL Amplifier 



TO«OIO 
T8»«SF0R«ER 




Q1 NA21EX Q2 NB111EY 
Figure E. Typical Converter Circuit 




Q1 NB111EQ2 NA21YG/J Q3 NA21YG/J 
Figure F. 2W Audio Amplifier 



NA31 (NPN) 
NA32 (PNP) 

features 



2 Amp complementary power transistors 

(T) packages and lead coding 



■ 30 Volt/2 Amp rating 

■ 1.2 Watts practical power dissipation (TO-92 PLUS™ ) 

■ 1.75 Watts free air power dissipation (TO-202) 

■ Low V CE(sat ) and V B E(satl characteristics at 
l c = 12A, l B =30mA 

■ Matched HFE groupings for complementary applications 
• "Epoxy B" packaging concept for excellent reliability 

applications 

■ 4-Watt audio power amplifiers 

■ Medium power switching circuits 

■ Converter/Inverter circuits 

■ TV receivers 

(2) maximum ratings 



TO-92 PLUS ™ 




PACKAGE CODE 


LEAD 


TO-92 PLUS 


TO-202 


1 


2 


3 


X 


K 


E 


B 


C 


Y 


L 


E 


C 


B 


Z 


M 


B 


C 


E 



PARAMETER 



SYMBOL 



RATING 



UNIT 



Collector-Emitter Voltage 
Collector-Base Voltage 
Emitter-Base Voltage 
Collector Current (continuous) 
Power Dissipation (T A = 25°C) 

TO-92 PLUS 

TO-202 
Power Dissipation (T c = 25°C) 

TO 92 PLUS 

TO-202 
Thermal Resistance 

TO-92 PLUS 

TO 202 

Temperature, Junction and Storage 



VCEO 
V CB 
V E B 
lc (max) 
Pd 



Pd 



0ja/#jc 
9ja/«jc 
Tj, T stg 



30 

35 
5.0 
2.0 

0.75 
1.75 

2.5 
10 

167/50 
72/12.5 
-55 to + 150 



V D C 
V DC 
Vdc 
A 

W 

w 

w 
w 

°C/W 

°c/w 
°c 



{3} ordering information 



-POLARITY 



'1" for NPN 
"2" for PNP 



N A 3 X X X 

L. 



-PACKAGE/LEAD CODE 

refer to (T| 

-HFE GROUPING 

refer to f§] 



5-16 



(4) electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVcEO 


Collector-Emitter 
Sustaining Voltage 


l c = 1 mA 


30 






V 


BV CBO 


Collector-Base 
Breakdown Voltage 


l c = 100 juA 


35 






V 


bVebo 


Emitter-Base 
Breakdown Voltage 


l E = 10mA 


5 






V 


'ceo 


Collector-Emitter 
Leakage Current 


V CE = 25 V 






100 


ma 


ICBO 


Collector-Base 


V CB = 30V 






1 




V BE(on} 
v BE(sat> 


Base-Emitter Voltage 

Base-Emitter 
Saturation Voltage 


l c = 15 mA, V CE = 5V 
l c = 1.2A,l B = 30 mA 


600 


650 


700 


mV 




0.95 


1.2 


V 


v CE(sat) 


Collector-Emitter 
Saturation Voltage 


l c r 12A, l B = 30 mA 




0.5 


1 


V 


v BE(sat) 


Base-Emitter 
Saturation Voltage 


l c = 1.2A, l B = 120 mA 




1.0 


1.4 


V 


VcE(sat) 


Collector-Emitter 
Saturation Voltage 


l c - 1.2A, l B = 120 mA 




0.25 


0.5 


V 


C ob 


Collector Output Capcita nee 
NPN types 
PNP types 


V CB = 10V, f = 1 MHz 




10 
17 




pF 
pF 


ft 


Current Gain Bandwidth 
Product 


l c = 300 mA, V CE = 5V 


20 






MHz 



[D HFE groupings 



GROUPING 



PARAMETER 



CONDITIONS 



MIN 



TYP 



MAX 



RATIO 



G 
H 
I 
J 
X 
Y 



DC Current Gain 
DC Current Gain 
DC Current Gain 
DC Current Gain 
DC Current Gain 
DC Current Gain 



l c =300 mA, V CE = 5V 
l c - 300 mA, V CE = 5V 
l c ■ 300 mA, V CE = 5V 
l c = 300 mA, V CE = 5V 
l c = 300 mA, V CE = 5V 
l c = 300 mA, V CE =5V 



68 
100 
140 
200 
30 



100 



_ 



85 
127 
180 
260 
58 

M 



: 



110 
160 
240 
350 
110 

350 



1:1.6 
1:1.6 
1:1.6 
1:1.6 
1:3.5 
1:3.5 



{§} physical dimensions 



(Z) heatsink information 



TO-202 



TO-92 PLUS 




TO-92 PLUS package 
with heatsink shown on 
right permits 1.6 Watts 
power dissipation and 
combined Thermal Re- 
sistance JA = 78°C/W. 
If used without heat- 
sink and PCB land area 
at collector lead > 1 sq. 
inch, P D - 1.2W. 



TO-202 package with 
heatsink shown on right 
permits 3 Watts Pq and 
JA = 42°C/W. 



solder 
tab here 




0.040 
ALUMINIUM 
SHEET 



5-17 



CL 

z 
a 

CO 

< 



Q. 

z 

T— 

CO 

< 



[8j typical performance characteristics 



< 

I 
I 



SOA 

dc safe operating area 









1 


UJ 


0.5 


cc 


0.3 


cc 




=3 


0.2 


tJ 




CC 


0.1 


o 




r- 

O 


0.05 


UJ 

—1 


0.03 


—I 


0.02 


O 


u 






0.01 



(A) 

















Tc = 25°C 



































































































































































































0.1 0.2 0.3 0.5 1 2 3 5 10 30 

COLLECTOR TO EMITTER VOLTAGE (VcE> — V 



Cob 

output capacitance 



(B) 



LU 



< 
IX 

< 



< 

CD 













EMITTER-OPEN 






































































































PNP 


















NPN 









5 10 15 20 25 30 35 40 

COLLECTOR TO BASE VOLTAGE <Vcb> — V 



> 

| 



< 

y- 
_j 
o 
> 



HFE1/HFE2 

current gain linearity ratio 



(C) 




0.01 0.2 0.03 0.05 0.1 0.2 0.3 0.5 



COLLECTOR CURRENT Oc) — A 

VCE(sat) 

collector to emitter saturation voltage (E) 



0.5 

0.3 
0.2 

0.1 

0.05 
0.03 
0.02 













TEST TIME • 300 /jS 




































M 












IC 


















IB 


- 40 




















IC 


10 


















IB 































0.01 0.02 0.03 05 0.1 0.2 0.3 0.5 1 2 

COLLECTOR CURRENT dc) — A 



HFE1/HFE2 

current gain linearity ratio 



(D) 








1- 




< 




oc 




LU 

u_ 


2 


X 




a 




LU 


1 


— 1 


5 


< 






OR 


0.3 




0.2 




0.1 

















VCE - 10V 






























































































PN 















































0.01 0.02 03 0.05 0.1 



0.2 0.3 



COLLECTOR CURRENT 0c) — A 

VBE (sat) 

base to emitter saturation voltage 



(F) 













TEST TIME = 300 










































































IB 


















IC 
IE 


'.. 40" 
1 















































t 0.5 

Ei 0.3 

o 

S 0.1 

< 01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 
CD 

COLLECTOR CURRENT (lc> — A 



5-18 



(§) typical applications 




Q] NB021EY 

Q2 NB211EY 

Q 3 NR001E 

Q 4 NA31YG/I 

rl Q5 NA32YG/I 

m 



Figure A. 4 Watt/ 8 Ohm OTL Amplifier 




Ql N B 01 1 E U 

Q 2 NB211EH/J 

Q3 NR001E 

Q4 NA31YG/I 

Q5 NA32YG/I 



Figure B. 4 Watt/ 4 Ohm OTL Amplifer 



Vcc- 12V 



4r 

[1 NA31KX 

♦ IC-2Am 



RECORD 
HEAD 



3q 



MICROPHONE 



Figure C. Relay Driver 




NA41 (NPN) 

NA42(PNP) 2 5Amp complementary power transistors 
features Q] packages and lead 

■ 30 Volt/2.5 Amp rating -fO-1 26 

■ Available in TO-126 and TO-220 packages 

■ Low Vce (sat) and V BE (sat) characteristics at 
l c = 16 A, l B =40 mA 

■ Matched HFE groupings for complementary 
applications 

■ "Epoxy B" packaging concept for excellent reliability 



coding 

TO-220 



applications 

■ 4 to 7 Watt, 4 or 8 Ohm audio power amplifiers 

■ High current switching circuits 

■ Converter/I m/erter circuits 

■ TV receivers 




B C E 



B C E 



PACKAG 
TO 126 


E CODE 
TO 220 


U 


W 



maximum ratings 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 


Vce 


30 


V D c 


Collector-Base Voltage 


V CB 


35 


Vdc 


Emitter-Base Voltage 


v EB 


4 


v D c 


Collector Current (continuous) 


l c (max) 


2.5 


A 


Power Dissipation (T A = 25° C) 


P D 






TO-126 




1.7 


w 


TO-220 




1.8 


w 


Power Dissipation (T c = 25°C) 


Pd 






TO-126 




25 


w 


TO-220 




25 


w 


Thermal Resistance 








TO-126 


<?ja/0jc 


73.5/5 


°c/w 


TO-220 


0ja/0jc 


69.4/5 


°c/w 


Temperature, Junction and Storage 


Tj, Tstg 


-55 to + 150 


°c 



ordering information 



"1" for NPN 
-POLARITY .. 2 .. for pNp 



- PACKAGE/LEAD CODE 

refer to (TJ 



N A 4 XX X 

L 



-HFE GROUPING 

refer to foH 



5-20 

: 



electrical characteristics Tc = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVcER 


Collector-Emitter 
Sustaining Voltage 


l c = 10 mA, R = 1 K 


30 






V 


BVcBO 


Collector-Base 
Breakdown Voltage 


l c = lOOuA 


35 






V 


8V EB0 


Emitter-Base 
Breakdown Voltage 


l E = 100uA 


4 






V 


ICER 


Collector-Emitter 
1 pakaap Puripnt 


V CE = 20V, R = 1 K 






500 


uA 


'CBO 


Collector-Base 
Leakage Current 


V CB = 25V 






200 


uA 


V BE (on) 


Base-Emitter Voltage 


l c = 10 mA, V CE = 10V 


510 


590 


670 


mV 


V BE (sat) 


Base-Emitter 
Saturation Voltage 


l c = 1.6A, l B = 40 mA 






1.2 


V 






V BE (sat) 


Base-Emitter 
Saturation Voltage 


l c = 1.6A, l B ■ 160 mA 






1.4 


V 


V CE (sat) 


Collector-Emitter 
Saturation Voltage 


l c = 1.6A, l B =40 mA 






1.2 


V 


V CE (sat) 


Collector-Emitter 


l c = 1.6A, l B = 160 mA 






0.6 


V 


Cob 


Saturation Voltage 












Collector Output Capacitance 
NPN types 
PNP types 


V CB = 10V, f = 1 MHz 




35 
65 




pF 
pF 



5 HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


G 
H 
1 

X 
Y 


DC Current Gain 
DC Current Gain 
DC Current Gain 
DC Current Gain 
DC Current Gain 


l c - 300 mA, V C E ~ 10V 
l c = 300 mA, V C E = 10V 
l c = 300 mA, V CE = 10V 
l c = 300 mA, V CE = 10V 
l c = 300 mA, V C e " 10V 


68 
100 
140 
30 
100 


85 
127 
180 
58 
190 


110 
160 
240 
110 

350 


1:1.6 
1:1.6 
1:1.6 
1:3.5 
1:3.5 



6 physical dimensions 











TO-126 






M - 120 

a no 


3'TVP 
1 


©' 

1 2 3 


MB i 

0.150 ' 
—'7- 0.M5 — 
" 43S 






_j. : 1 

»°« Sis! 
BH& BB 

i 





TO-220 



p7~| heatsink information 

I,-'. ..-».. 

The TO-126 and TO-220 packages used 
with heatsink shown below permits about 
8.7 Watts Power Dissipation and #ca = 
9.4° C/W. 



1 095 

: o los 



02S RAD L g 



X 

2 PLACES 



"3w • 



0.05 inch aluminium sheet 



I- MS 




Mount transistor 
_ under heatsink 
and apply ther- 
mally conductive 
compound bet- 
ween contact 
surfaces. 



5-21 



8 



typical performance characteristics 



< 

i 

1 5 



SOA 

dc safe operating area 



(A) 



> 

I 



0.3 
0.2 













T C = 25°C 




2.5 Amp 
































TO-126 
and 






























TO-220 









































1 2 3 5 10 20 30 50 

COLLECTOR TO EMITTER VOLTAGE (Vce)--V 

HFE1/HFE2 

current gain linearity ratio (C) 



o 

< 



0.5 
0.3 
0.2 

0.1 






















VCE = W 




























_ PI 


JP 










































NP 








Npr 


1 — 









































































2 0.05 0.1 0.2 0.5 1 2 

COLLECTOR CURRENT <I C ) - - A 



VCE(sat) 

collector to emitter saturation voltage 



(E) 



0.5 
0.3 
0.2 

0.1 
0.05 
0.03 
0.02 
0.01 

















TEST TIME = 300mS 
























































HF 


E > 


2( 










































































HFE 


- 10 









































































































0.01 0.02 



0.05 0.1 0.2 



COLLECTOR CURRENT Oc) 



1 2 

--A 



Cob 

collector to base capacitance 



(B) 




o 



0.1 0.2 0.5 1 2 5 10 20 50 70 

COLLECTOR TO BASE VOLTAGE (Vcb> - - V 



HFE1/HFE2 



0.5 
0.3 























VCE ■ 10V 




























p 


IP 


























NP 


1 - 
















NP 


N 
















NP- 5 " 
























- p 



































0.01 0.02 0.05 0.1 0.2 



> 

I 



COLLECTOR CURRENT Oc) A 

VBE(sat) 



base to emitter saturation voltage 




0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 

COLLECTOR CURRENT (l C )--A 



5-22 



VCC ■ 24V 

o 



— ■— i/yr 
35V 




Figure A. 6 Watt, 8 Ohm OTL Amplifier 



Q1 NB021EY 

Q2 NB211YY 

03 NR001E 

Q4 NA41U 

Q5 NA42U 




Figure B. 6 Watt, 4 Ohm OTL Amplifier 



Q1 


NB021EY 


Q2 


NB211YY 


Q3 


NR001E 


Q4 


NA41U 


Q5 


NA42U 



VlN 

o- 



NA42U 



GND 

o — 



NB3UV ] 

1 T 



VlN 
O- 



NA41U 



GND 
O- 



LM7BL SERIES 



i O 



Figure C. Linear Regulator Circuit 



Figure D. Switching Regulator Circuit 



NA51(NPN) 

3.5Amp complementary power transistors 

NA52(PNP) 



features 

i 45 Volt/3.5 Amp rating 

i Available in TO-1 26 and TO-220 packages 

i Low V C e (sat) and V BE (sat) characteristics at 
l c = 2A, l B = 80 mA 

i Guaranteed V C e (sat) and V BE (sat) at 
Ic = 3A, lrj = 160 mA for improved short- 
circuit protection design in audio amplifier 

i "Epoxy B" packaging concept for excellent reliability 

applications 

■ 6 to 14 Watt, 4 or 8 Ohm audio power amplifier 

i High current switching circuits 

i Converter/Inverter circuits 

i TV receivers 



packages and lead coding 



TO-1 26 



TO-220 




B c E 



b c 



maximum ratings 



PACKAG 
TO 126 


E CODE 
TO 220 


U 


W 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 
Collector-8ase Voltage 
Emitter-Base Voltage 
Collector Current (continuous) 
Power Dissipation (T A = 25°C) 

TO-1 26 

TO-220 
Power Dissipation (T c ■ 25°C) 

TO-126 

TO-220 
Thermal Resistance 


V C E 
V C B 

Veb 

Ic (max) 

Pd 


45 
50 
4 

3.5 

1.8 
2.0 

30 
30 


Vdc 
Vdc 
Vdc 

-4 A 

W 

w 

w 
w 


TO-126 
TO-220 

Temperature, Junction and Storage 


"ja/Cjc 

"ja/0jc 
Tj, Tstg 


69.4/4.17 
62.5/4.17 
-55 to + 1 50 


°c/w 

°C/W 

°c 


. 

3 ordering information 




- 

1 


"1" for NPN 
POLARITY 



N A 5 XX 

L 



PACKAGE/LEAD CODE 

refer to [T] 



4 electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVrcn 
° v CE R 


Collector-Emitter 
Sustaining Voltage 


l c = 10 mA, R = 1K 


45 






V 


BVcBO 


Collector-Base 
Breakdown Voltage 


IC - IUUUA 


OU 








BVebo 


Emitter-Base 
Breakdown Voltage 


IE " 1UU|/A 


A 

** 






w 

V 


>CER 


Collector-Emitter 
Leakage Current 


V C E = 35V, R = 1K 






1 


mA 














ICBO 


Collector-Base 
Leakage Current 


V CB = 40V 






0.5 


mA 


V BE (on) 


Base-Emitter Voltage 


l c = 15 mA. V CE = 10V 


520 


600 


680 


mV 


VgE (sat) 


Base-Emitter 
Saturation Voltage 


1 — OA 1 - on m A 
- Zf\, \ q - oU mA 






1 1 
1 .O 


W 
V 


V B e (sat) 


Base-Emitter 
Saturation Voltage 


1 OA 1 — 1 cn m A 

lc - 3A, Iq - 160 mA 






1 .6 


V 


V CE (sat) 


Collector-Emitter 
Saturation Voltage 


l c = 2A, l B = 80mA 






1.5 


V 


VCE 'sat) 


Collector-Emitter 


1 „ — OA |_ — 1 Cfl — A 
IC JM , ?g 1 OU ITIM 






c 
O 


V 




Saturation Voltage 












HFEt 


DC Current Gain 


l c = 500 mA, V CE - 10V 


30 


100 




ratio 


Cob 


Collector Output Capacitance 
NPN types 
PNP types 


V CB = 10V,f = 1 MHz 




35 
65 




pF 
pF 



5 physical dimensions 



6 heatsink information 




The TO-126 and TO-220 packages 
used with heatsink shown below 
permits about 9.2 Watts power 
dissipation and flcA = 9.4°C/W. 



U 

T IZM 
, ' MAX 



m 



, • us, 

Sr^m »■■— i" "i— 



X 

1 

I 'LACES 



I 



-as -I 




TO-220 



0.05 inch aluminium sheet 

Mount transistor under heatsink and 
apply thermally conductive compound 
between contact surfaces. 



[ 7 | typical performance characteristics 



< 

i 
i 



< 

s 

cc 
o 



> 
I 
I 



> 



SOA 

dc safe operating area 



(A) 



0.3 
0.2 



1 1 

or Akin 






T C = 25°C 




1 










































TO-126^ 














TC 


■220 

































































1 2 3 5 10 20 30 45 50 

COLLECTOR TO EMITTER VOLTAGE (V C e) - - V 

HFEl/HFE2 

current gain linearity ratio (C) 



0.5 
0,3 
0.2 























V C E = 1V 




























_ PN 












































. NP 


N 




- MOM 


































































— 






s - 





























0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 

COLLECTOR CURRENT (l C ) - - A 



VCE(sat) 

collector to emitter saturation voltage 



(E) 



0.3 
0.2 

0.1 

0.05 
0.03 
0.02 
0.01 
0. 

















TEST TIME- 300/jS 
























































HFE 




20 








































































HFE = 


10 











































































01 0. 02 0. 05 0. 1 0.2 0. 5 1 

COLLECTOR CURRENT <I C > - - A 



■ 

Cob 

collector to base capacitance 



(B) 



Q- 
< 



LU 




0.1 0.2 0.5 1 2 5 10 20 50 70 

COLLECTOR TO BASE VOLTAGE (V C b) - - V 

HFE1/HFE2 

current gain linearity ratio (D) 



o 






2 


< 




CC 




LU 


1 


X 




O 




LU 


0.5 


N 


—i 




< 


0.3 






cc 


0.2 


o 










0.1 























VCE ' 10V 




























_ PP 


P 












































YPN 




























» 




















- P 




\ 































■ 

I 
I 



< 
I- 

I 

o 
> 



0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 

COLLECTOR CURRENT «c) - - A 

VBE(sat) 

base to emitter saturation voltage (F) 




0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 

COLLECTOR CURRENT (l C )--A 



526 



1(VF 




QJ 

Q2 


NB021EY 
NB122EY 


Q3 


NR001E 


CM 


NB112EY 


05 


NB312E 


1 Q6 


NB322E 


| N Q8 


NA52W 
NA51W 


J 





Figure A. 12 Watt. 8 Ohm OTL Amplifier 




Q1 NB021EY 

Q2 NB122EY 

Q3 NR001E 

Q4 NB112EY 

Q5 NB312E 

QG NB322E 

IJ* Q8 NA51W 



VlN 

O- 



GNO 

o— 



NB311Y J 



o- 



VOUT 



GNO 

a- 



V 



LM78L SERIES 



-o 



Figure C. Linear Regulator Circuit 



Figure D. Switching Regulator Circuit 



5-27 



£5| National 

jlA Semiconductor 



NA61 (NPN) 
NA62 

features 



4.5Amp complementary power transistors 

[T| packages and lead coding 



45 Volt/4.5 Amp rating 
Available in TO-126 and TO-220 packages 
Low V C e ("t) a nd V BE (sat) characteristics at 
l c = 3A, l B = 150 mA 
Guaranteed V CE (sat) and V BE (sat) at 
l c = 4.5A, l B = 300 mA for improved short- 
circuit protection design in audio amplifiers 
"Epoxy B" packaging concept for excellent reliability 



TO-126 



TO-220 



applications 

10 to 25 Watt, 4 Ohm audio power amplifiers 
High current switching circuits 
Converter/Inverter circuits 
TV receivers 




B C E 



B C 



maximum ratings 



PACKAG 
TO 126 


E CODE 
TO 220 


U 


W 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 
Collector-Base Voltage 


V C E 


45 


v D c 


V C B 


50 


V DC 


Emitter-Base Voltage 


Veb 


4 


Vdc 


Collector Current (continuous) 


l c (max) 


4.5 


A 


Power Dissipation (T A = 25°C) 


P D 






TO-126 




1.8 


w 


TO-220 




2.0 


w 


Power Dissipation (T c = 25°C) 


Pd 






TO-126 




40 


w 


TO-220 




40 


w 


Thermal Resistance 








TO-126 


0ja/0jc 


69.4/3.125 


°c/w 


TO-220 




62.5/3.125 


°C/W 


Temperature, Junction and Storage 


Tj, Tstg 


-55 to + 1 50 


°c 



3 o 



rdering information 



N A 6 X X 

L 



POLARITY 



"V'for NPN 
"2" for PNP 



- PACKAGE/LEAD CODE 

refer to [T] 



5-28 



4 electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVcer 


Collector-Emitter 
Sustaining Voltage 


l c = 10 mA, R = IK 


45 






V 


BVcBO 


Collector-Base 
Breakdown Voltage 


l c = 100/jA 


50 






V 


BVebo 


Emitter-Base 
Breakdown Voltage 


l E = 100mA 


4 






V 


'CER 


Collector-Emitter 
Leakage Current 


V CE = 35V, R = 1 K 






2 


mA 


ICBO 


Collector-Base 
Leakage Current 


V CB =40V 






1 


mA 


V BE (on) 


Base-Emitter Voltage 


l c = 20mA,V CE = 10V 


520 


600 


680 


mV 


V BE (sat) 


Base-Emitter 
Saturation Voltage 


l c = 3A, l B = 150 mA 






1.5 


V 


V B e (sat) 


Base-Emitter 
Saturation Voltage 


l c = 4.5A, l B = 300 mA 






2 


V 


V CE (sat) 


Collector-Emitter 
Saturation Voltage 


l c = 3A, l B - 150 mA 






2-..- 


V 


V CE (sat) 


Collector-Emitter 
Saturation Voltage 


l c = 4.5A, l B = 300 mA 






5 


V 


HFE-, 


DC Current Gain 


l c = 500 mA, V CE = 10V 


30 


100 




ratio 


Cob 


Collector Output Capacitance 
NPN types 
PNP types 


V CB = 10V, f = 1 MHz 




40 

70 




pF 
pF 



5 physical dimensions 



6 heatsink information 







rvtr 


©' 


a i4i i 

DIM 

r~ 042S- 

* 0*3b 


P 


1 1 J 


h 


■ 






III 


Ik W 

L 





The TO-126 and TO-220 packages 
used with heatsink shown below 
permits about 10 Watts power 
dissipation and C A = 9.4°C/W. 



i«. ^_ "» 

1=3 11 
tm J * 



TO-126 



1.25 





0.05 inch aluminium sheet 

Mount transistor under heatsink and 
apply thermally conductive compound 
between contact surfaces. 



529 



7 



typical performance characteristics 



SOA 

dc safe operating area 



(A) 



0.3 
0.2 





1 

4.5 Am 


P 




Tc » 25°C 








































IU-I2S 
and 














T 


U-220 

























































1 2 3 5 10 20 30 45 50 100 

COLLECTOR TO EMITTER VOLTAGE (Vce) - - V 



HFE1/HFE2 

current gain linearity ratio 



(C) 



0.5 
0.3 
0.2 





















vce = iv 
























? r- 


















































■ 









































































0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 

COLLECTOR CURRENT (If) - - A 

VCE (sat) 

collector to emitter saturation voltage IE) 



i 

0.5 

0.3 
0.2 

0.1 

0.05 
0.03 
0.02 
0.01 

















TEST TIME = 300/LiS 


































































hfp = ; 























































HFE 


- 1 















>— 





































































0.01 0.02.03 .05 0.1 0.2 



0.5 



Cob 

collector to base capacitance 



(B) 



300 
200 



< 
a. 

< 
o 

UJ 

1 

o 
t- 



s 



O 

< 



as 



> 
I 

I 





















EMITTER-OPEN 












































F 


VP 
























































n 













































































0.1 0.2 0.5 1 2 5 10 20 50 70 

COLLECTOR TO BASE VOLTAGE (Vcb) - - V 



HFE1/HFE2 

current gain linearity ratio 



(D) 



0.3 
0.2 























vce = iov 
























































?«v 


















< 















































































0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 

COLLECTOR CURRENT He) - -A 



VBE(sat) 

base to emitter saturation voltage 



(F) 




COLLECTOR CURRENT (Iq) - - A 



0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 

COLLECTOR CURRENT c) --A 



8 typical applications 



10uF 



±r 
1 



% S56K 



INPUT 
O 



4 7„F 
100P 



2.9K 5 



t 



, V R K^H^3 OSS 




YCC-?SV ' 



I 412 



Figure A. 25 Watt OTL Amplifier 



±L 
1 



| i*of Id 




2.4K 




Figure B. 18 Watt OTL Amplifier 

TOR010 TRANSFORMER 



I 




Q1 


NB022EY 


Q2 


NB123EY 


Q3 


NR001E 


Q4 


NB113EY 


Q5 


NB111EY 


Q6 


NB121EY 


Q7 


NB313Y 


Q8 


NB323Y 


Q9 


NA62W 


Q10 


NA61W 






Q1 


NB022EY 


Q2 


NB122EY 


Q3 


NR001E 


Q4 


NB112EY 


Q5 


NB111EY 


Q6 


NB121EY 


Q7 


NB313Y 


Q8 


NB323Y 


Q9 


NA62W 


Q10 


NA61W 




TO 



DISTRIBUTOR 



3! 3£'« -p 
i i i- 



)0 



39K 



_L BREAKER I 



Q1 NA61W 
Q2 NAB1W 
NB111EY 



Figure C. Capacitor Discharge Ignition System 



NA71 (NPN) 

NA72(PNP) 3 5Amp com P ,ement a r V power transistors 



features 

■ 60 Volt/3.5 Amp rating 

■ Available irj TO-126 and TO-220 packages 

■ Low V C £ (sat) and V B e characteristics at 
■c = 2 A, l B = 100mA 

■ Guaranteed V CE (sat) and V B e <"t) «t 
l c = 3A, l B = 200mA for improved short 
circuited protection design in audio amplifiers 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ 10— 25 Watt 8 Ohm audio power amplifiers 

■ High current switching circuits 

■ Converter/Inverter circuits 

■ TV receivers 



p~l packages and lead coding 



TO-126 



TO-220 




B C e 



B C E 



2 maximum ratings 



PACKAG 
TO 126 


E CODE 
TO 220 


U 


W 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 


V C E 


60 


V DC 


Collector-Base Voltage 


V CB 


65 


Vdc 


Emitter-Base Voltage 


Veb 


4 


Vdc 


Collector Current (continuous) 


lc (max) 


3.5 


A 


Power Dissipation (T A = 25°C) 


Po 






TO-126 




1.8 


W 


TO-220 




2.0 


W 


Power Dissipation (T c = 25° C) 


Pd 






TO-126 




40 


W 


TO220 




40 


w 


Thermal Resistance 








TO-126 


W0JC 


69.4/3.125 


°c/w 


TO-220 


0JA#jc 


62.5/3.125 


°c/w 


Temperature. Junction and Storage 


Tj, Tstg 


-55to+ 150 


°c 



[3] ordering information 



"1" for NPN 



-POLARITY -2-forPNP 

- PACKAGE/LEAD CODE 

refer to [T] 



5-32 



o i m du i_ 


f MiinniL i t_ i » 












Q\/ 


Collector-Emitter 
Sustaining Voltage 


Irj - 1 u m A, n - 1 1\ 


CA 

OU 






XI 
V 


BVcBO 


Collector-Base 
Breakdown Voltage 




DO 






w 

V 


BV E bo 


Emitter-Base 
Breakdown Voltage 


Iff - tUU fjif\ 


A 

4 






w 

V 


'CER 


Collector-Emitter 
Leakage Current 


Vfj E duv, n — i r^ 






o 
£ 


mA 
FTIM 


'CBO 


Collector-Base 
Leakage Current 


Vcb = 55V 






1 


_ A 

mM 


V BE (on) 


Base-Emitter Voltage 


l c = 20mA, V CE = 10V 


520 


600 


680 


mV 


V Be (sat) 


Base -Emitter 
Saturation Voltage 


I — OA I — 1 nn ™ a 
>C *A, lg - TOO nriA 






1 .5 


V 


V B e (sat) 


Base-Emitter 
Saturation Voltage 


I — O A I — OAA m A 

lc - 3A, >b - 200 mA 






2 


V 


V CE (sat) 


Collector-Emitter 
Saturation Voltage 


lc " 2A, lg = 100 mA 






2 


V 


Vce I 53 *) 


Collector-Emitter 
Saturation Voltage 


■ oa i nnn . a 

lc ■ oA, lg - zOO mA 






5 


V 


HFE, 


DC Current Gain 


l c = 500 mA, V CE = 10V 


30 


100 




ratio 


Cob 


Collector Ouput Capacitance 
NPN types 
PNP types 


V CB = 10V, f = 1 MHz 




40 

70 




pF 
PF 



5 physical dimensions 



6 heatsink information 




The TO- 126 and TO-220 packages 
used with heatsink shown below 
permits about 10 Watts power 
dissipation and 9ca = 9.4°C/W. 



7ll 



TO-126 





0.05 inch aluminium sheet 

Mount transistor under heatsink and 
apply thermally conductive compound 
between contact surfaces. 



5-33 



[~7~] typical performance characteristics 



< 

i 
i 



SOA 

dc safe operating area 



(A) 



S 



I- 
< 



< 



> 

I 
I 



< 
I- 
—I 

o 
> 

CO 
UJ 



0.3 
0. 















T C = 25°C 




3.5Amp 




































T0-2 


20 s 
















T0-1 


26 V 






1 























































1 2 3 5 10 20 30 50 60 100 

COLLECTOR TO EMITTER VOLTAGE (Vce> - - V 

HFE1/HFE2 



current gain linearity ratio 



(C) 





0.2 
0.1 























VCE = 'V 















































































































































































0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 
COLLECTOR CURRENT (lc) - - A 

VCE (sat) 

collector to emitter saturation voltage (E) 



0.5 
0.3 
0.2 

0.1 

0.05 
0.O3 
0.02 



=; 0.01 

















TEST TIME = 300/uS 




































































-HF 


E = 




















































IFE = 


10 



















































































0.01 0.02 0.CB0.CE 0.1 0.2 0.5 1 2 3 5 
COLLECTOR CURRENT dc) - - A 



I 

I 

1 



< 

o- 
< 



2 

o 

s 



4 



> 

I 



C3 
< 



Cob 

collector to I 



(B) 





















EMITTER-OPEN 


■ ■ 








































































m 




















































































1 






1 — 


■ 













0.1 0.2 0.5 1 2 5 10 20 50 70 
COLLECTOR TO BASE VOLTAGE (Vcb) - - V 

HFE1/HFE2 



current gain linearity ratio 



ID) 



0.5 



0.2 























V CE = 10V 
























































w 




















V 











































































































0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 
COLLECTOR CURRENT (lc) - - A 

VBE(sat) 

base to emitter saturation voltage (F) 




0.01 0.02 0.05 0.1 0.2 



COLLECTOR CURRENT (lc) A 

■ 



5-34 



8 



typical applications 




Figure A. 25 Watt OTL Amplifier 



Figure B. 18 Watt OTL Amplifier 



vim 
O- 



NA72U 



LM75L SERIES 



12V 




Q1 


N8022EY 


Q2 


NB123EY 


03 


NR001E 


Q4 


NB113EY 


Q5 


N8111EY 


Q6 


NB121EY 


Q7 


NB313Y 


08 


NB323Y 


09 


NA72W 


Q10 


NA71W 


01 


NB022EY 


02 


NB123EY 


Q3 


NR001E 


04 


NB113EY 


Q5 


N8111EY 


06 


NB121EY 


Q7 


NB313Y 


08 


NB323Y 


09 


NA72W 


Q10 


NA71W 



VOUT 



NA71U 



FL0URESCEMT 
LAMP 



• i it 

M 



3l! 



touoiu 
transformer 



Figure C. Switching Regulator Circuit 



Figure D. Battery Lantern Circuit 



GJJ National 

4lm Semiconductor 



NB011.012(NPN) , n . Qnarol „ „. r , nc . (nre 

NB021.022(PNP) 30mA generai Purpose transistors 



features 



1 package and lead coding 



■ 35 to 50 Volt at 30 mA collector ratings 

■ 300 mV guaranteed V C e (sat) characteristics at 
lc ■ 10 mA and l B = 0.5 mA 

■ Matched HFE groupings for complementary applications 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ Small signal amplifier circuits 

■ Equalizer preamplifiers 

■ Low current switching circuits 

■ TV receivers 




PACKAGE CODE 




LEAD 


TO-92 


1 


2 


3 


E 


E 


B 


C 


f 


E 


C 


B 


H 


C 


B 


E 



maximum ratings 



PARAMETER 


SYMBOL 


NB011 
NB021 


NB012 
NB022 


UNIT 


Collector-Emitter Voltage 


V C EO 


35 


50 


V DC 


Collector-Base Voltage 


V CB 


40 


55 


Vdc 


Emitter-Base Voltage 


V EB 


5 


5 


v DC 


Collector Current (continuous) 


l c (max) 


30 


30 


mA DC 


Power Dissipation (T^ * 25°C) 


Pd 


0.6 


0.6 


W 


Power Dissipation (Tc = 25°C) 


Po 


1.0 


1.0 


W 


Thermal Resistance 


*JA 


208 


208 


"CM 


■ 

Temperature, Junction and Storage 


0JC 
Tj.Tstg 


125 
-55 to + 1 50 


125 

-55 to + 150 


°C/W 

°C 



ordering information 



POLARITY 



•V'forNPN 
"2" for PNP 



NB0XXXX 



VOLTAGE RATING 

refer to |T] 



PACKAGE/LEAD CODE 

refer to [7] 

HFE GROUPING 

refer to \b\ 



TTs — 



electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BV CEO 


fr\l 1 ftctnr.Fm i ttar Qi ictaininn V/riltafiP 
1 \ ctiui 1 1 1 1 1 Lici Juo tan liny vui layc 

NB01 1/021 
NB01 2/022 


lc = 


1 mA 


35 
50 






V 
V 


BVcBO 


Collector-Base Breakdown Voltage 
NB01 1/021 
NB01 2/022 


lc = 


100(xA 


40 

55 






V 
V 


bVebo 


Emitter-Base Breakdown Voltage 


If = 


10mA 


5 






V 


'CEO 


Collector-Emitter Leakage Current 


V CE 


= 30V NB01 1/021 
45V NB01 2/022 






1 

I 


HA 


ICBO 


Collector-Base Leakage Current 


Mr- a 
v Co 


= 35V NB01 1/021 
50V NB01 2/022 






0.1 
0.1 


fA 

ma 


Iebo 


Emitter-Base Leakage Current 


Veb 


= 4V 






0.1 


ma 


v B E >* al ' 


Rasp-Fmittpr Saturation Vnltaap 


lc = 


10 mA, l B = 0.5 mA 




0.75 


0.95 


v 


V CE (sat) 


Collector-Emitter Saturation Voltage 


lc = 


10 mA, l B = 0.5 mA 




0.1 


0.3 


V 


Cob 


Collector Output Capacitance 
NPN types 
PNP types 


V C B 


= 10V, f = 1 MHz 




2 
3 




PF 
pF 


ft 


Current Gain Bandwidth Product 


"c = 


1 mA, V CE = 5V 


50 


120 




MHz 



5 HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


1 


DC Current Gain 


lc = 


1 mA,V CE = 5V 


140 


180 


240 


1 


1.6 


J 


DC Current Gain 


lc = 


1 mA, V CE = 5V 


200 


260 


350 


1 


1.6 


K 


DC Current Gain 


lc = 


1 mA, V C e = 5V 


300 


380 


500 


1 


1.6 


L 


DC Current Gain 


lc = 


1 mA, V C e = 5V 


450 


580 


750 


1 


1.6 


T 


DC Current Gain 


"c = 


1 mA, V CE = 5V 


100 


150 


240 


1 


2.4 


U 


DC Current Gain 


lc = 


1 mA, V CE = 5V 


200 


320 


500 


1 


2.4 




DC Current Gain 


lc = 


1 mA,V C E =5V 


450 


700 


1100 


1 


2.4 


Y 


DC Current Gain 


■c = 


1 mA, V C E = 5V 


100 


190 


350 


1 


3.5 


Z 


DC Current Gain 


lc = 


1 mA, V C E =5V 


300 


580 


1100 


1 


3.5 



6 physical dimensions 



|~7~] max power dissipation 




3 

I 
I 



■056^ I gf | 
.045 ~" ■+ 046 



X 


1.2 


to 

s 




a. 


1.0 


z. 




o 


0.8 






< 




a- 


0.6 






o 




rc 


0.4 


LU 

S 




o 
a. 


0.2 


2 




=> 
25 





X 








1 



























^-T 


■ CASE TEMPERATURE 










1 i I I 1 

s~\ = AMBIENT TEMPERATL 


RE 

























































28 50 75 1 00 1 25 1 50 175 200 
TEMPERATURE (T) °C 



5-37 



HFE1/HFE2 

current gain linearity ratio 



(A) 



LU 
U_ 

X 

S 0.5 

N 

-1 

< 0.3 
cc 

Z 0.2 
0.1 



























































I 

NPN 

PNP 






PNP 




























NP 


N 

































































































or 
o 



> 

I 



o 
> 



0.01 0.03 0.1 0.3 1 3 10 30 

COLLECTOR CURRENT (Iq) - - mA 

VCE(sat) 

collector to emitter saturation voltage (C) 




> 

I 
I 



UJ 

o 



^ 0.01 0.03 0.1 0.3 1 3 10 30 

° COLLECTOR CURRENT (lc)--mA 

} Cob 

— output capacitance 



t to 

u 

< 

a. 
< 



(E) 























EMITTER-OPEN 














































































P 


NP 






















-N 


PN 













































HFE1/HFE2 

current gain linearity ratio 



(B) 



0.5 
0.3 
0.2 



























VCE = 10V 
































Nf 






pr 


IP 


























PN 




u 


PN 



































































































0.01 0.03 0.1 0.3 1 3 1 

COLLECTOR CURRENT (Iq) mA 



VBE(sat) 

bate to emitter saturation voltage (p) 



0.6 
0.5 























TEST TIME = 300/uS 
























































































HI 


E_« 


10 






























Hf 


E ■ 


50 















































0.01 0.03 0.1 0.3 1 3 10 30 

COLLECTOR CURRENT (l C ) - - mA 

hoe 

common emitter output admittance (F) 



0.3 
o.i 

0.03 
0.01 
0.003 



< 

S 
< 

fc 

I 

= 0.001 























VcE = 10V.f = 1 KHz 
















































I I 1 

















































































































































































































































































0.1 0.3 1 3 10 30 100 

COLLECTOR TO BASE VOLTAGE (V C b) - - V 



0.01 0.03 0.1 0.3 1 3 10 30 

COLLECTOR CURRENT (l C ) - - mA 



5-38 




01 NB013EU 02 NB013EU 03 NB011EY 
04 NB013EU 05 NB021 E Y 06 NB0I1EY 
07 NB011EY Q8 NR051EB Q9NB011EY 



CO 



< 
■o 

o 

5L 

03 

TJ 

■o 

o 

5' 

3 



Figure A. High Quality Preamplifier with Tone Control Circuit 




— W- 




Ql NR041E Q2 NB013EU Q3 NB011EY 



Figure B. Battery Operated Recording/Playback Cassette Circuit 



Ql NB013EY ♦ Gain = 60KWV L ■ BmH 

02 NB023EY ♦ Input (moetlancc Qu - 50 

03 NB011EY = IK Ohm N1=40T 

04 NB01TEY ♦ Output noise N2 = 360T 

05 NB011EY = IOmVrms N3 =■ 40T 



Figure C. High Gain Ultrasonic Amplifier 



(dNd)ZZO'LZOgN (NdN)ZI-O'UOaN 




National 
Semiconductor 



NB013.014 (NPN) 
NB023,024(PNP) 



30mA low noise transistors 



features 

■ 35 to 50 Volt at 30mA collector ratings 

■ 300mV guaranteed Vce (sat) characteristics at 
lc = 10mA and le = 0.5mA 

■ 1dB typical wide-band Noise Figure 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ Low noise amplifier circuits 

■ Equalizer preamplifiers 



Pn package and lead coding 




PACKAGE CODE 




LEAD 


T092 


' 1 


2 


3 


E 


E 


B 


C 


F 


E 


C 


B 


H 


C 


B 


E 



maximum ratings 







NB013 


NB014 


UNIT 


PARAMETER 


SYMBOL 


NB023 


NB024 


Collector-Emitter Voltage 


VcEO 


35 


50 


V DC 


Collector-Base Voltage 


V CB 


40 


55 


Vdc 


Emitter-Base Voltage 


Veb 


5 


5 


Vdc 


Collector Current (continuous) 


l c (max) 


30 


30 


mAoc 


Power Dissipation (T A = 25°C) 


Pd 


0.6 


0.6 


W 


Power Dissipation (Tc = 25°C) 


P D 


1.0 


1.0 


W 


Thermal Resistance 


"jA 


208 


208 


°C/W 




0JC 


125 


125 


°C/W 


Temperature, Junction and Storage 


Tj. Tstg 


-55 to + 150 


-55 to + 1 50 


°c 



3 ordering information 



r 

NB0XXXX 



"1" for NPN 
-POLARITY -2-forPNP 

-VOLTAGE RATING 

refer to [J] 



PACKAGE/LEAD CODE 

refer to |T) 

-HFE GROUPING 

refer to [5] 



5-40 



4J electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVcEO 


Collector-Emitter Sustaining Voltage 
N B0 13/023 
NB014/024 


l c - 1 mA 


35 
50 






V 
V 


McBO 


Collector-Base Breakdown Voltage 
NB013/023 
NB014/024 


l c = 100fiA 


40 

55 






V 
V 


BVebo 


Emitter-Base Breakdown Voltage 


l E = 10/jA 


5 






V 


!CE0 


Collector-Emitter Leakage Current 


V CE = 30V NB013/023 
45V NB014/024 






1 
1 


AlA 
uA 


'CBO 


Collector-Base Leakage Current 


V CB ■ 35V NB013/023 
50V NB014/024 






50 
50 


nA 
nA 


•ebo 


Emitter-Base Leakage Current 


V EB =4V 






0.1 


,/A 


V B e (sat) 


Base-Emitter Saturation Voltage 


l c = 10 mA, l B = 0.5 mA 




0.75 


0.95 


V 


V CE (sat> 


Collector-Emitter Saturation Voltage 


l c = 10 mA, l B ■ 0.5 mA 


0.1 


0.3 


V 


Cob 


Collector Output Capacitance 
NPN types 
PNP types 


V CB ■ 10V, f = 1 MHz 




2 
3 




pF 
pF 


ft 


Current Gain Bandwidth Product 


l c = 1 mA, V CE =5V 


50 


120 




MHz 


NF 


Noise Figure 


l c = 10uA, V C E = 5V 

R s = 10K,BW= 15.7 KHz 




1 


4 


dB 



HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


1 


DC Current Gain 


l c = 100/jA, V CE =5V 


140 


180 


240 


1 


1.6 


J 


DC Current Gain 


l c = 100mA, V CE = 5V 


200 


260 


350 


1 


1.6 


K 


DC Current Gain 


l c = 100nA,V C E=5V 


300 


380 


500 


1 


1.6 


L 


DC Current Gain 


l c = IOOj/A, V CE ■ 5V 


450 


580 


750 


1 


1.6 


T 


DC Current Gain 


l c = 100nA, V CE = 5V 


100 


150 


240 


1 


2.4 


U 


DC Current Gain 


l c - lOOfiA, V C E " 5V 


200 


320 


500 


1 


2.4 


V 


DC Current Gain 


l c = 100mA, V CE =5V 


450 


700 


1100 


1 


2.4 


Y 


DC Current Gain 


l c = lOOfiA, V CE = 5V 


100 


190 


350 


1 


3.5 


Z 


DC Current Gain 


l c = 100/jA, V C e " 5V 


300 


580 


1100 


1 


3.5 



6 physical dimensions 



|~7~| max power dissipation 




i 
i 



P 1.0 



0.4 



o 



X 



























= CASE TEMPERATURE 

i i i I 










^T = 


AMBI 


ENT ' 


EMP 


ERAT 


JRE 

























































"26 SO 75 1 00 1 25 1 50 175 200 
TEMPERATURE (TI - - °C 



5-41 



It i_ I / ■ ii i.i 
current gain linearity ratio 



(A) 



o 
< 



0-3 
0.2 





























V 


c 


PN 


V 
>N 

N 




p 


JP 






























PN 



































































































> 
I 

I 



0.01 0.03 0.1 0.3 1 3 10 30 

COLLECTOR CURRENT (lc) - - mA 

VcE(sat) 

collector to emitter saturation voltage (C) 




)01 0.03 0.1 0.3 1 3 10 

COLLECTOR CURRENT (lc) - - mA 







o 




t— 




< 


1 


CO 




LU 
Li_ 




X 




o 

LU 


0.5 


M 








< 


0.3 






cc 




O 


0.2 


z 






0.1 



< 



k- ■( ■ ■ I k— ' 

current gain linearity ratio 



(B) 





























V 


CE 


< 1( 

u 


IV 

p 


Pf 


JP 




























ph 




N 


3 N 



































































































0.01 0.03 0.1 0.3 



I ' 

I I 

I 0.3 

oa 
o 

£ 0.1 

in 

u 

0.03 
0.01 

o 
< 

I- 0.003 
a. 

■3 0.001 



COLLECTOR CURRENT (l C )--mA 

hoe 

common emitter output admittance 























V C E = 10V, f = 1 KHz 









































































































































































































































































































































0.1 



COLLECTOR CURRENT (lc) - - mA 



< 

< 



< 
O 



Cob 

output capacitance 



(E) 























EMITTER-OPEN 


















































































PNP 
























































NPN 













0.1 0.3 1 3 10 30 100 

COLLECTOR TO BASE VOLTAGE (Vcb> - - V 





10 


CO 


9 


TD 




I 
I 


8 


uT 


7 


z 


6 


LU 
CC 


5 


ZD 




to 


4 


U. 




LU 


3 


V3 




o 


2 


z 






1 








NF 

wide band noise figure 



IF) 



Vce = 5V, BW= 15.7 KHz 



.A - PNP types, lc " 10mA 
B - PNP types, lc = 100/uA 
C- NPN types, lc = 10"A 
D - NPN types, lc= ICIOuA - 




3K 10K 30K 

SOURCE RESISTANCE (Rg) - - Ohm 




01 NB013EU 02 NB013EU 03 NB011EY 
Q4 NB013EU Q5 MB021EY 06 NB0I1EY 
Q7 NB011EY QB NR051 EB 



to 



< 
■o 

o' 

SL 

o> 
■o 
■o 

o 

0) 

r* 

o 

3 

in 



Figure A. High Quality Preamplifier with Tone Control Circuit 





Ql NR041E 



Q2 NB013EU 



Q3 NB011EY 



01 NB013EY 

02 NB023EY 

03 NB011EY 

04 NB011EY 

05 NB011EY 



♦ 0«in. 60K Vi V 

♦ Input impedance 

- IK Ohm 

♦ Output noise 

- tOmV n 



Nl -40T 
N2 ■ 360T 
N3 - 40T 



Figure B. Battery Operated Recording/Playback Cassette Circuit 



Figure C. High Gain Ultrasonic 



(dNd^zo'ezoaN '(NdN)no'ei-oaN 



National 
SlA Semiconductor 



KIV2 1 i; 1 1 1 22; 1 1 1 2 3 3(PNP) 1 °° mA genera ' P^'P™ translators 



features 

■ 35 to 65 Volt at 100mA collector ratings 

■ 300mV guaranteed V CE (sat) characteristics at 
l c = 40mA and l B = 0.8mA 

■ Matched HFE groupings for complementary applications 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ Small signal amplifier circuits 

■ Medium current level switching circuits 
• LED drivers 

■ TV receivers 



m package and lead coding 



TO-92 




PACKAGE CODE 


LEAD 


TO-92 

! 


1 


2 


3 


E 


E 


B 


C 


F 


E 


C 


B 


H 


C 


B 


E 



2J maximum ratings 







NB111 


NB112 


NB113 




PARAMETER 


SYMBOL 


NB121 


NB122 


NB123 


UNIT 


Collector-Emitter Voltage 


VCEO 


35 


50 


65 


Vdc 


Collector-Base Voltage 


V CB 


40 


55 


70 


Vdc 


Emitter-Base Voltage 


V EB 


6 


6 


6 


Vdc 


Collector Current (continuous) 


l c (max) 


100 


100 


100 


mA DC 


Power Dissipation (T A = 25°C) 


Pd 


0.6 


0.6 


0.6 


W 


Power Dissipation (T c = 25°C) 


Pd 


1.0 


1.0 


1.0 


W 


Thermal Resistance 


0JA 


208 


208 


208 


°C/W 




0jc 


125 


125 


125 


°C/W 


Temperature, Junction 


Tj, Tstg 




-55 to + 150 




°C 


and Storage 


-55 to + 150 


-55 to + 1 50 



3] ordering information 



I 

NB1XXXX 



"V'for NPN 
•POLARITY "2"forPNP 

■VOLTAGE RATING 

refer to [T] 

• PACKAGE/LEAD CODE 
refer to \T\ 
■ HFE GROUPING 

refer to (jf| 



5-44 



4 electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVceo 


Collector-Emitter Sustaining Voltage 
NB1 1 1/121 
NB112/122 
NB113/123 


l c = 1 mA 


35 
50 
65 






V 
V 
V 


° v CBO 


Collector-Base Breakdown Voltage 
NB111/121 
NB112/122 
NB113/1 23 


l c " 100uA 


40 
55 
70 






V 
V 
V 


BV EB0 


Emitter-Base Breakdown Voltage 


l E = IOuA 


6 






V 


'CEO 


Collector-Emitter Leakage Current 


V CE * 30V NB111/121 

A CXI MQ110/1O1 

45V NB1 1//1 22 
60V NB1 13/123 






1 
1 
1 


MA 
^A 
MA 


'CBO 


Collector-Base Leakage Current 


V CB = 35V NB111/121 
50V NB112/122 
65V NB1 13/123 






0.1 
0.1 
0.1 


ma 

HA 
HA 


1 E BO 


Emitter-Base Leakage Current 


V EB = 5V 






0.1 


MA 


V BE(sat) 


Base-Emitter Saturation Voltage 


l c =40 mA, l B = 0.8 mA 




0.8 


0.95 


V 


VcElsatl 


Collector-Emitter Saturation Voltage 


\q ~ 4U mA, lg - U.O (DA 




0.1 5 


U.J 


V 


Hf E 1 


DC Current Gain 


l c * 100mA, V ce = 5V 


50 






ratio 


Cob 


Collector Ouput Capacitance 
NPN types 
PNP types 


V CB = 10V. f = 1MHz 




2 
3 




pF 
pF 


U 


Current Gain Bandwidth Product 


l c = 15 mA, V CE = 5V 


100 






MHz 



5J HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


H 


DC Current Gain 


lc 


= 15 mA, V CE » 5V 


100 


127 


160 


1:1.6 


I 


DC Current Gain 


lc 


= 15 mA, V C e = 5V 


140 


180 


240 


1:1.6 


J 


DC Current Gain 


lc 


= 15 mA, V CE " 5V 


200 


260 


350 


1:1.6 


Y 


DC Current Gain 


lc 


= 15 mA, V CE = 5V 


100 


190 


350 


1:3.5 



6 physical dimensions 



IT] max power dissipation 




s 

i 

i 

x 12 



0.4 
0.2 



.065 
046 



r~ r 

























/ 


= CASE TEMPERATUR 
I I I 


E 










T = 


AMBIENT TEMPERAT 


URE 

























































25 50 75 1 00 125 1 50 175 200 
TEMPERATURE (T) - - °C 



545 



HFE1/HFE2 

current gain linearity ratio 



(A) 



x 
a 

uj 0.5 



0.3 
0.2 













PNP 












Vce = >V 




















NPN 












s 
































p» 

































































0.1 0.3 1 3 10 20 50 100 

COLLECTOR CURRENT (lrj> - - mA 



> 
I 



o 

> 



1= 

s 



VCE(sat) 

collector to emitter saturation voltage 



(C) 



S 0.03 



















TEST TIME = 300/uS 






















































PNP > 






























''NPN 












<FE = 


50 


































PNP, 




















4FE = 


10 














-N 












-1 

















































0.3 1 3 10 20 50 

COLLECTOR CURRENT He) - - mA 



< 
s 

o 



> 

I 
I 



< 



o 
> 



0.3 
0.2 



nrti / r-ircz 

current gain linearity ratio 



<B> 





-H 


P- 
















VCE " 10V 








N 


W. 
IP 


























Pl 




n 

























































































0.3 1 3 10 20 50 100 

COLLECTOR CURRENT (lrj) - - mA 



VBE(sat) 

base to emitter saturation voltage 



(D) 



0.5 
0.3 
0.2 



HFE = 10 
HFE = 50 



TEST TIME ■ 300juS 



0.3 1 3 10 20 50 

COLLECTOR CURRENT 0c> - - mA 



< 

Q. 

s 



t- 

O 



Cob 

output capacitance 



(E) 





















EMITTER - OPEN 




































































































1 


PN 

















































0.1 0.3 1 3 10 20 50 100 

COLLECTOR TO BASE VOLTAGE (Vcb> - - V 



P 



2 
1 

0.5 
0.3 
0.2 



hoe 

common emitter output admittance (F) 



















VcE = 10V,f = 1 KHz 










































































































































































































' 









































0.3 1 3 10 20 50 

COLLECTOR CURRENT (l C ) - - mA 



5-46 



9 typical applications 




Figure A. 6 Watt, 8 Ohm OTL Amplifier 




v c c= 1BV 



Q1 NB021EY 

Q2 NB211EY 

Q3 NR001E 

Q4 NA31YG/I 

Q5 NA32YG/I 



I .V ) i 

Figure B. 4 Watt, 8 Ohm OTL Amplifier 



HORIZONTAL 
PREDRIVER 





HOR. 




AMP 



SYN-SEP 

AND 
FILTERS 



NB212EY 
NB222EY 



CRT . 
DEFLECTION p 
YOKE 



VERTICAL 
PREDRIVER 





VERT. 




AMP 



Figure C. TV processor/predriver applications 



SEG OUTPUTS 



CALCULATOR 
OR 
CLOCK 



I I I 



I 



LED ARRAY 
I I I 



' NB21 1 EY 



DIG OUTPUTS 

Figure D. Calculator/Clock driver application 




National 
Semiconductor 



NB211.212.213(NPN) 
NB221.222.223(PNP) 



500mA medium current driver transistors 



features 



35 to 65 Volt at 500 mA collector ratings 
1 .2 Watts practical power dissipation (TO-92 PLUS™ ) 
400 mV guaranteed Vce (s«t) characteristics at 
lc * 100mA and l B = 2 mA 

Matched HFE groupings for complementary applications 
"Epoxy B" packaging concept for excellent reliability 



|~1~| package and lead coding 

TO-92 TO-92 PLUS™ 



applications 

■ 4 to 6 Watt amplifier class A drivers 

■ Medium current level switching circuits 

■ LED drivers 

■ TV receivers 




PACKAGE CODE 
TO-92 
TO-92 PLUS 


1 


LEAD 

2 


3 


E X 


E 


B 


C 


F Y 


E 


c 


B 


Z 


B 


C 


E 


H 


C 


6 


E 





2 


maximum ratings 








NB211 


NB212 


NB213 






PARAMETER 


SYMBOL 


NB221 


NB222 


NB223 


UNIT 




Collector-Emitter Voltage 


V C EO 


35 


50 


65 


Vdc 




Collector-Base Voltage 


V C B 


40 


55 


70 


Vdc 




Emitter-Base Voltage 


V EB 


6.0 


6.0 


6.0 


Vdc 




Collector Current (continuous) 
Power Dissipation (T A ■ 25°C) 


l c (max) 
Pd 




500 


500 


mA 




TO-92 




0.6 


0.6 


0.6 


W 




TO-92 PLUS 




0.75 


0.75 


0.75 


W 




Power Dissipation {Tq = 25°C) 


Pd 












TO-92 




1.0 
2.5 


1.0 
2.5 


1.0 

2.5 


W 
W 




TO-92 PLUS 






Thermal Resistance 














TO-92 


<?ja/0jc 


208/125 


208/125 


208/125 


°C/W 




TO-92 PLUS 


0ja/0jc 


167/50 


167/50 


167/50 


°C/W 




Temperature, Junction and Storage 


Tj, Tstg 


-55 to +150 


-55 to +150 


-55 to +150 


°C 



ordering information 



I f 



-POLARITY " 1 " forNPN 
PULARITY » 2 " f or p N p 



VOLTAGE RATING 

refer to \T\ 



- PACKAGE/LEAD CODE 

refer to |~2~] 
-HFE GROUPING 

refer to (T) 



548 



[4~| electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVcEO 


Collector-Emitter Sustaining Voltage 
NB21 1/221 

KID 01 *3 /OOO 

NB21 3/223 


l c = 1 mA 


35 
50 
65 






V 
V 


BVcBO 


Col lector- Base Breakdown Voltage 
NB21 1/221 
NR91 9/999 

NB213/223 


l c = lOQuA 


40 

55 
70 






V 

v 

V 


BVebo 


Emitter-Base Breakdown Voltage 


Ie = ICtylA 


6 






V 


'ceo 


Collector-Emitter Leakage Current 


Vce = 30V NB21 1/221 
45V NB21 2/222 
60V NB213/223 






10 
10 
10 


"A 
|iA 
MA 


ICBO 


Collector Base Leakage Current 


V C b = 35V NB211/221 






0.5 


fA 






50V NB21 2/222 
65V NB213/223 






0.5 
0.5 


//A 
"A 


•ebo 


Emitter-Base Leakage Current 


V EB = 5V 






0.1 


"A 


V BE (sat) 


Base-Emitter Saturation Voltage 


l c = 100 mA, l B = 2mA 




0.8 


0.95 


V 


V CE (sat) 


Collector-Emitter Saturation Voltage 
DC Current Gain 


l c = 100 mA, l B - 2 mA 




0.2 


0.4 


V 


HFE1 


l c = 1 mA,V CE = 5V 


30 






ratio 


Cob 


Collector Output Capacitance 
NPN types 
PNP types 


V CB » 10V, f = 1 MHz 




3.5 
4.5 




pF 
pF 


h 


Current Gain Bandwidth Product 


l c = 20mA, V CE = 6V 


50 






MHz 



5 HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


G 


DC Current Gain 


l c = 30mA, V CE = 5V 


68 


85 


110 


1:1.6 


H 


DC Current Gain 


l c = 30 mA, V C e = 5V 


100 


127 


160 


1:1.6 




DC Current Gain 


l c = 30mA, V CE =5V 


140 


180 


240 


1:1.6 


J 


DC Current Gain 


l c = 30mA, V CE = 5V 


200 


260 


350 


1:1.6 


X 


DC Current Gain 


l c = 30mA,V CE =5V 


30 


58 


110 


1:3.5 


Y 


DC Current Gain 


l c = 30 mA, V C e =5V 


100 


190 


250 


1:3.5 



6 physical dimensions 



\~7~\ heatsink information 



TO-92 PLUS 



TO-92 






t 1 
Si 



0.030 
STEEL SHEET 



TO-92 PLUS package with heat- 
sink shown on right permits 1.6 
Watts power dissipation and 
combined Thermal Resistance 
0JA = 78°C/W. If used without 
heatsink and PCB land area at 
collector lead > 1 sq. inch, 
P D = 1 .2W. 



5-49 



8 typical performance characteristics 



< 

i 
i 



0.5 
0.3 
0.2 

0.1 
0.05 
0.03 
0.02 



SOA 

dc safe operating area 



(A) 



-I o.oi 



g 0.005 
0.003 



















T C = 25°C 










































































































i 






















































































NB211/NB221 - 


















NB212/NB222- 




■I* 


1 












"NB213/NB223 - 




1- 


T 



0.1 0.2 0.3 0.5 1 2 3 5 10 20 355065 

COLLECTOR TO EMITTER VOLTAGE (Vqe) - - V 



■ 



u_ 

a. 


I 

1 

o 


20 


u 




CE 




z 






10 






u 


7 


< 




Q_ 




< 


5 


O 




ASE 


3 


m 




O 




1- 


2 


cc 




o 




1- 




o 





UJ 
_l 





—J 




o 




o 





Cob 

output capacitance 



(B) 













EMITTER-OPEN 
















































PNP_ 


















NPN 



























5 10 15 20 26 30 36 40 

COLLECTOR TO BASE VOLTAGE <Vcb> - - V 



HFE1/HFE2 

current gain linearity ratio 



HFE1 



0.5 
0.3 
0.2 

0.1 



(C) 





















V C E = 1V 

















































































































































0.001 .003 0.01 .02 .03 .05 0.1 0.2 0.3 0.5 1 

COLLECTOR CURRENT (lc) - - A 



0.5 

0.3 
0.2 

0.1 





















V C E = 10V 














































































































- 































0.001 .003 0.01 .02.03 0.05 0.1 0.20.3 0.5 1 

COLLECTOR CURRENT (l C > - - A 



> 

I 
I 

LU 
U 
> 

Ul 
< 

I 

O 
> 



VcE(sat) 



10 

5 
3 
2 

1 

0.5 
0.3 
0.2 

0.1 
















TEST TIME * 300/jS 












































<; 


































































r < 




























HFE = 50 
















.05 
.03 






HF 


E = 1 










































0.001 .003 0.01 .02 .03 .05 0.1 0.2 0.5 1 

COLLECTOR CURRENT (Ip) - - A 



< 

I 
I 



VBE(sat) 

base to emitter saturation voltage (F) 



2 
1.5 



0.6 
0.5 

0.3 

















TEST TIME = 300iiS 


































— 1 
























HF 


E = 


SO 



























































0.001 .003 0.01 .02 03 .05 0.1 0.2 0.5 

COLLECTOR CURRENT (l C l- -A 




5-50 



9J typical applications 



*22K 
47K % ^68K X 



47uF 



100 =: 
p 



GND 



-JrV- . 

160K ::di 
^d 2 



v cc . 40 v 



120 
Q 2 



3-6 K 5 



68K X ^ ^68o J |c>3 



15K *680 



ifc 100 ^ lop * ) Q6 r^~ 



160? 2 



__K — 
— k0 4 

1.2K 



3.6 K 



a, 



i;12oJ i_ liiF ° 
j— T I 60V 



150 



100 0.5 £ 30V 

fc — -fie 

5 100 0.5 5 



1000 uF 




9 6.2 



8n 



Q1 


NB022EY 


Q2 


NB123EY 


Q3 


NR001E 

nil uu 1 1- 


Q4 


NB1 13EY 


Q5 


NB111EY 


06 


NB121EY 


Q7 


NB313Y 


as 


NB323Y 


09 


NA72W 


Q10 


NA71W 




Figure A. 25 Watt OTL Amplifier 



Q1 NB011EY 

Q2 NB111EH/J 

Q3 NR001 

04 NA21EG/J 

•"05 NA22EG/J 



■5V 



-t>>-r -0 



Figure B. 700mW 6VMn OTL Amplifier 



~L NB111 

1 



EY 



Figure C. High fan-out TTL driver 















HOR. 
PREDRIVER 




HOR. 
AMP 








Ld 








SYN-SEP 


NB112EY 




CRT 
DEFL | 


AND 


** NB122EY 

I 




YOKE ( 


FILTERS 
















VERT, 




VERT. 








PREDRIVER 




AMP 





SEG O/P 
I 

i i i r 



CALCULATOR 
OR 
CLOCK 



IT 



DIG O/P 



J L 



LED ARRAY 



NB111EY OR 
NB211EY 



Figure D. TV processor/predriver applications 



Figure E. Calculator/Clock driver application 



5-51 




National 
Semiconductor 



J!SolHlo'olo!EUK 1-5Amp complementary powerdrivers 
NB321, 322,323(PNP) 



features 

■ 35 to 65 Volt at 1.5 Amp collector ratings 

■ LowVcE (sat)andVBE (sat) characteristics with 
l c = 300 mA and l B = 10 mA drive 

■ Available in TO-92, TO-92 PLUSTM and TO-202 

packages 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ Driver stages in high-power audio amplifiers 

■ Medium-power switching circuits 

■ Converter/inverter circuits 

■ TV receivers 



(T| packages and lead coding 

TO-202 



TO-92 



TO-92 PLUS™ 




I maximum ratings 



PACKAGE CODE 


LEAD 






TO-92 










TO-92 


PLUS 


TO-202 


1 


2 


3 


E 


X 


K 


E 


B 


C 


F 


Y 


L 


E 


C 


B 




Z 


M 


B 


C 


E 


H 






C 


B 


E 



PARAMETER 


SYMBOL 


NB311 
NB321 


NB312 
NB322 


NB313 
NB323 


UNIT 


Collector-Emitter Voltage 


V C EO 


35 


50 


65 


V D c 


Collector-Base Voltage 


V C B 


40 


55 


70 


Vdc 


Emitter-Base Voltage 


V EB 


6 


6 


6 


Vdc 


Collector Current (continuous) 


lc 


1.5 


1.5 


1.5 


Adc 


Power Dissipation (T A = 25°C) 


P D 










TO-92 




0.6 


0.6 


0.6 


w 


TO-92 PLUS 




0.75 


0.75 


0.75 


w 


TO-202 




1.75 


1.75 


1.75 


w 


Power Dissipation (T c = 25°C) 


p d 










TO-92 




1.0 


1.0 


1.0 


w 


TO-92 PLUS 




2.5 


2.5 


2.5 


w 


TO-202 




10 


10 


10 


w 


Temperature, Junction 
and Storage 


T j. T stg 


-55 to +150 


-55 to +150 


-55 to +150 


°c 



(~3~] ordering information 



N B 3 



(f 
X X 



POLARITY 



X 

L 



•V forNPN 
"2" for PNP 



VOLTAGE RATING 

refer to [T] 

PACKAGE/LEAD CODE 

refer to Q] 



5-52 



[4) electrical characteristics 


T c = 25°C 










SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVcEO 


Collector-Emitter 
Sustaining Voltage 
NB31 1/321 
NB31 2/322 
NB31 3/323 


lc = 1 mA 


35 
50 
65 






V 
V 
V 


BVcBO 


Collector-Base 

□ 1 caMJUWI 1 VUI Loyc 

NB31 1/321 
NB31 2/322 
NB3 13/323 


l c = 100 mA 


40 
55 
70 






V 
V 


BVebo 


Emitter-Base 
Breakdown Voltage 


l E = 10/iA 


6 






V 


!CEO 


Ct~\\ Ipctnr-Fmit'tpr 

njU 1 LUI LINIltCI 

Leakage Current 


V CE = 30V NB31 1/321 
45V NB31 2/322 
60V NB31 3/323 






50 
50 
50 


ma 
ma 

tiA 


'CBO 


Collector-Base 
Leakage Current 


V CB =35V NB31 1/321 
duv iNDoiz/oZ*; 
65V NB313/323 






0.5 
0.5 
0.5 


ma 
ma 

HA 


!ebo 


Emitter-Base 
Leakage Current 


Veb ~ oV 






0.5 


juA 


VBE(sat) 


Base-Emitter 

^atiirntinn X/nltano 


I — ion m A I — i n m A 




0.9 


1 


V 


v CE(sat) 


Collector-Emitter 
Saturation Voltage 


l c = 300 mA, l B = 10 mA 




0.15 


0.5 


V 


Hfe, 


DC Current Gain 


l c = 1 mA, V C e - 10V 


30 








Hfe 2 


DC Current Gain 


l c = 100 mA, V C e = 10V 


50 








Cob 


Collector Output 


V C B = 10V, f = 1 MHz 












Capacitance 

NPN types 
PNP types 






lu 
17 




pF 
pF 


ft 


Current Gain 
Bandwidth Product 


l c = 100 mA, V C e = 10V 


20 






MHz 



physical dimensions 

TO-202 




5-53 



f6] typical performance characteristics 



< 

• i 



SOA 

dc safe operating area 



(A) 







i— 


1 


ae 


0.5 


RR 


0.3 


a 


0.2 






0.1 


o 




F 

o 


0.05 


Ui 
_ J 


0.03 


—1 


0.02 


a 


o 


0.01 



















Tr* - 9C°P 


















. L to 




















A- 






















































































! I 








































B311/NB321- 
R317/NR3W- 


















N 


















NB313/NB323- 




h 





0.1 0.2 0.3 0.5 1 2 3 5 10 20 35 50 65 

COLLECTOR TO EMITTER VOLTAGE (VcE> V 



HFE1/HFE2 

current gain linearity ratio 



(C) 



0.3 
0.2 

















V C E = IV 














































































NPN 


















PNP > 















































> 

I 
I 



o 
> 



s 



0.01 0.02 .03 0.05 0.1 0.2 0.3 0.5 1 2 

COLLECTOR CURRENT Hc)--A 

VCE(sat) 

collector to emitter saturation voltage (E) 




TEST TIME = 300mS 



0.01 0.02 .03 .05 0.1 0.2 0.3 0.5 1 2 

COLLECTOR CURRENT (Iq) — A 



Cob 

output capacitance 



(B) 



< 



< 
CO 

o 




EMITTER-OPEN 



PNP 



NPN 



15 20 25 30 35 40 



COLLECTOR TO BASE VOLTAGE (V C B> - 



HFE1/HFE2 

current gain linearity ratio (D) 



INI 



2 

'■ 1 

0.5 



< 

| 0.3 
° 0.2 

0.1 

















VCE = 10V 
















































































N 
















PNP 















































> 



0.01 0.02 .03 0.05 0.1 0.2 0.3 0.5 1 2 

COLLECTOR CURRENT (If;) A 

VBE(sat) 

base to emitter saturation voltage (F) 



0.5 
0.3 















TEST TIME = 300mS 






















































IC 


-=10 


















IB 


















- IC MO- 
















IB 















































0.01 0.02 .03 .05 0.1 



COLLECTOR CURRENT 0c> -- A 



5-54 



(T) typical applications 



-vW— 

180K 



V CC =A0V 



3.6 K 5 



*22K 
X 

" VR I 
10K 



i' 1 680 T lo 3 



i -120 



09 



r _L 6ov 



150 



00 0.5 % 30V 



1000 




Figure A. 25 Watt OTL Amplifier 



VCC=30V 

o 




Figure B. 12 Watt OTL Amplifier 



Q1 NB022EY 

Q2 NB123EY 

Q3 NR001E 

Q4 NB113EY 

Q5 NB111EY 

Q6 NB121EY 

Q7 NB313Y 

Q8 NB323Y 

Q9 NA72W 

Q10 NA71W 



Q1 NB021EY 

Q2 NB122EY 

Q3 NR001E 

Q4 NB112EY 

Q5 NB312E 

Q6 NB322E 

Q7 NA52W 

Q8 NA51W 



T0R0ID 

VCC TRANSFORMER 

° 27 



— r 



T 
f 



Figure C. Typical Converter Circuit 




Figure D. Typical TV Horizontal Driver Application 



NR421(NPN) VHF amplif ier/FM converter transistor 

| 1 | package and lead coding 



featu res 

■ 0.65pF typical feedback capacitance for excellent 
RF stability 

■ Guaranteed collector-base time constant and 
RF output resistance 

■ 150mV typical V CE (sat) characteristics at 
lc = 10 mA, and l B = 0.5 mA 

■ 2 dB typical noise figure at 200 MHz 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ VHF RF amplifiers/converters 

■ CB radios 

■ Low-power RF oscillators 



TO-92 




PACKAGE CODE 




LEAD 




TO-92 


1 


2 


3 


□ 


B 


E 


C 


F 


E 


C 


B 



2 maximum ratings 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 


Vceo 


30 


v D c 


Collector-Base Voltage 


N?CB 


35 


v D c 


Emitter-Base Voltage 


V EB 


3 


Vdc 


Collector Current (continuous) 


lc (max) 


30 


mApc 


Power Dissipation (Ta = 25°C) 


P D 


0.6 


W 


Power Dissipation (T c = 25°C) 


Pd 


1.0 


W 


Thermal Resistance 


0JA 


208 


°C/W 




0JC 


125 


°C/W 


Temperature, Junction and Storage 


Tj.Tstg 


-55 to + 150 


°C 



ordering information 



-PACKAGE/LEAD CODE 

refer to Q] 



NR421XX 



-HFE GROUPING 

refer to QF] 



[a] electrical characteristics Tc = 25°c 



SYMBOL 



PARAMETER 



CONDITIONS 



MIN 



TYP 



MAX 



UNIT 



BVcEO 
BVcbO 
BVebo 
ICBO 

V BE (sat) 

V CE <*«> 

Ccb 

Cob 

rb'Cc 

Roep 



Collector-Emitter Sustaining Voltage 

Collector-Base Breakdown Voltage 

Emitter-Base Breakdown Voltage 

Collector-Base Leakage Current 

Base-Emitter Saturation Voltage 

Collector-Emitter Saturation Voltage 

Common Emitter Collector 
Feedback Capacitance 

Collector Output Capacitance 

Collector Base Time Constant 

Common Emitter Output Resistance 

Current Gain Bandwidth Product 





I c - 1 mA 
l c = 100(J A 
l E = 10m A 
V CB = 30V 

l c = 10 mA, l B = 0.5 mA 
Ic ■ 10 mA, l B =0.5 mA 
V CB = 10V, f = 1 MHz 

V CB = 10V, f = 1 MHz 

l c = 2mA, V CE = 5V 

l c = 2 mA, V CE = 5V 
f « 200 MHz 

l c = 2mA, V CE = 5V 



30 
35 
3 



5 
450 



5.5 

830 
150 
0.65 

0.9 
8 

700 



0.1 
950 
300 

0.9 

1.3 
20 



V 
V 
V 
MA 
mV 
mV 
PF 

pF 

PS 

KOhm 
MHz 



5 HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


E 


DC Current Gain 


l c = 2mA, V C E = 5V 


30 


38 


50 


1:1.6 


F 


DC Current Gain 


l c = 2mA, V C E = 5V 


45 


58 


75 


1:1.6 


G 


DC Current Gain 


l c - 2 mA, V CE = 5V 


68 


85 


110 


1:1.6 


H 


DC Current Gain 


l c = 2 mA, V CE = 5V 


100 


127 


160 


1:1.6 


R 


DC Current Gain 


l c = 2mA,V C E = 5V 


20 


32 


50 


1:2.4 


S 


DC Current Gain 


l c = 2 mA, V ce = 5V 


45 


70 


110 


1:2.4 


1 


DC Current Gain 


l c = 2mA,V CE = 5V 


100 


150 


240 


1:2.4 



— . 

6J physical dimensions 





|7| max power dissipation 



TO -92 




■e 

i 



X 

1 


1.2 


o 
a. 


1.0 


z 




o 


0.8 


p 


MISS 


0.6 


a 


0.4 


I 


0.2 


X 




=> 

I 





X 




MA 





























T= C 


\SET 


EMPE 


RATI 


RE 










I 1 

J = 


I 1 

AMBI 


I 1 

:NT1 


I 1 

EMPE 


I 

RATI 


JRE 

























































25 60 75 100 12S ISO 175 200 
TEMPERATURE (T) — °C 



~ CI 



typical performance characteristics 



HFE1/HFE2 

currant linearity ratio 



(A) 



0.5 

03 
0.2 



0.1 























V C E ■ 5V 


















































s 



















































































0.1 0.3 1 3 10 

COLLECTOR CURRENT 0c) - - mA 



SO 



Yie 

common emitter input admittance 



(C) 











VcE"5V,lc = 2mA 










1 

cnnun. 








300MH 


i 












100MH 


z 








cm 














1 













1 2 3 5 7 10 

INPUT CONDUCTANCE (gie) -r 



20 30 



Yfe 

common emitter forward transfer admittance (E) 



50 



10 







VCE = 6V,lc = 2mA 












S00I 


A Hz 


300 


«Hz 










l 100 


MHz 






50M 


Hz \ 
i J» 





> 

1 




be) - 








UJ 

o 




> 




UJ 

a 




< 


5 


o 


3 


> 


2 


cc 

UJ 


1 


1= 

z 


0.5 


UJ 

o 


0.2 


1- 


0.1 


UJ 




0.06 


cc 




o 


0.02 


o 


0.01 



VcE(sat)/VBE(on) 

collector /bate to emitter voltage 



(B) 













V B E (ON) - - VCE ■ 5V 
VCE (SAT) — HFE = 20 
































I 

-v B e (0 


N)- 






































































VCE (SAT) 























































































































10 20 30 50 70 1 00 

FORWARD TRANSFER CONDUCTANCE (gfe) ■ - mmho 



1 



f 

E 
I 

I 



< 
t 



< 

CC 

o 



> 



0.1 0.3 1 3 10 50 

COLLECTOR CURRENT «c) - - mA 

Yoe 

common emitter output admittance (D) 



0.5 
0.3 

















VCE = 5V,lc = 2mA 










































500 


Ml 


Iz 
















300 


MHz 
















r 1 


DOMH 


z 














- 5 


)MHz 









































0.01 0.02 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 



OUTPUT CONDUCTANCE (goe) 

Yre 

common emitter reverie transfer admittance (F) 



o 
3 
2 

1 

0.7 
0.5 








VCE = 5V. lc = 2mA 








1 










-p— 500MHz - 

W onnti u. 




























0.3 








100MHz 






0.2 
0.1 


















DUNinz 

1 







0.3 0.5 0.7 1 2 3 5 

REVERSE TRANSFER CONDUCTANCE (-ore) - - j/mho 



MKCIES NR461ES 




I performance (88-108 MHz) 



AM performance (525-1650 KHz) 



• 30dB quieting sensitivity: 2£IV 

• limiting sensitivity: 7/iV 

• AM rejection: 40dB 

• AFC holding range: 800KHZ 

• stereo separation: 40dB 



• maximum sensitivity: 100J/V/M 

• 20dB quieting sensitivity: 280JiV/M 

• selectivity ±10KHz: -28dB 

• AGC figure of merit: 52dB 

• overload distortion: 3% 



Figure A. AM/FM/Casiette Home Stereo Circuit 



• 10% THD output power: 3W + 3W 

• frequency response: 50Hz - 1 5KHz 

• channel separation: 45dB 

• tone control range: ±10dB 

• typical system dist: 0.5% 



(NdNHZttJN 



National 
ALm Semiconductor 



NR431 (NPN) HF amplif ier/FM converter transistor 

\ 1 | package and lead coding 



features 

■ l.lpF typical collector feedback capacitance 

■ 5K Ohm minimum RF output resistance at 1 00 MHz 

■ 150mV typical Vce ( sat > characteristics at 
lc = 10 mA, and l B = 0.5 mA 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ High frequency amplifiers/converters 

■ CB radios 

■ Low power RF oscillators 

| 2 | maximum ratings 



TO-92 




PACKAGE CODE 




LEAD 


TO-92 


1 


2 


3 


E 


E 


B 


C 


F 


E 


C 


B 


H 


C 


B 


E 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 


V C EO 


15 


v D c 


Collector-Base Voltage 


V C B 


18 


v DC 


Emitter-Base Voltage 


Veb 


3 


Vdc 


Collector Current (continuous) 


l c (max) 


30 


mA DC 


Power Dissipation (T^ " 25° C) 


P D 


0.6 


W 


Power Dissipation (T c = 25°C) 


Pd 


1.0 


W 


Thermal Resistance 


9ja 


208 


°CAV 






125 


°C/W 


Temperature, Junction and Storage 


Tj, Tstg 


-55to + 150 


°C 



3 ordering information 



NR431XX 



PACKAGE/LEAD CODE 

refer to (Tj 



HFE GROUPING 

refer to [J] 



5-60 



[a] electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BVcEO 


Collector-Emitter Sustaining Voltage 


l c = 1 mA 


15 






V 


BV CB0 


Collector-Base Breakdown Voltage 


l c = 100uA 


18 






V 


BVebo 


Emitter-Base Breakdown Voltage 


l E = 10mA 


3 


5.6 




V 


1 C BO 


Collector-Base Leakage Current 


V C b = 15V 






0.1 


uA 


V BE (sat) 


Base-Emitter Saturation Voltage 


l c = 10 mA, l B ■ 0.5 mA 




830 


950 


mV 


V CE (sat) 


Collector-Emitter Saturation Voltage 


l c = 10 mA, IB =0.5 mA 




150 


300 


mV 


Ccb 


Common Emitter Collector 
Feedback Capacitance 


V C B = 10V, f = 1 MHz 




1.1 


1.4 


pF 


Cob 


Collector Output Capacitance 


V CB = 10V, f = 1 MHz 




1.4 


1.7 


pF 


Roep 


Common Emitter Output Resistance 


l c = 1mA, V CE = 5V 
f = 100 MHz 


5 






KOhm 


ft 


Current Gain Bandwidth Product 


l c = 1mA, V CE =5V 


350 


600 




MHz 



5| HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


E 


DC Current Gain 


l c = 1 mA, V CE = 5V 


30 


38 


50 


1 


1.6 


F 


DC Current Gain 


l c = 1 mA, V CE " 5V 


45 


58 


75 


1 


1.6 


G 


DC Current Gain 


l c = 1 mA, V CE = 5V 


68 


85 


110 


1 


1.6 


R 


DC Current Gain 


l c « 1 mA, V CE = 5V 


20 


32 


50 


1 


2.4 


S 


DC Current Gain 


l c = 1 mA. V CE = 5V 


45 


70 


110 


1 


2.4 



6J physical dimensions 



[7] max power dissipation 



TO-92 




.045 ~ -T - 045 



I 

* 1-2 

■ 

E 

£> 1.0 
z 

0.8 
K 

< 

1 0.6 

° 0.4 

I 

P 0.2 



X 

< 



























= CA 


SE TE 


MPEF 


ATU 

I ; 












T = / 


I 

\MBIE 


I 

NTT 


EMPE 


I 

RATU 


RE 

























































25 50 75 100 125 150 175 200 
TEMPERATURE (T) °C 



5-61 



< 



0.5 
0.3 



HFE1/HFE2 

current linearity ratio 



(A) 















- 

— 








V C E = 5V 
















1 













































































































0.1 0.3 1 3 10 

COLLECTOR CURRENT (lrj> - - mA 



> 
I 

CD 
> 
UJ 

o 
> 



t 

1 

UJ 

a 

P 

UJ 

< 

eo 
tc 
a 



VcE(sat)/VBE(on) 

collector/base to emitter voltage 



0.5 

0.2 
0.1 
0.05 

0.02 
0.01 



(B) 













Vbe(ON)-- Vce = 6V 
Vce(SAT) HFE-20 
















































































VBE >U"i 




















































j 






































































| 




— 












— ' 


— 


— 



















0.3 1 3 10 

COLLECTOR CURRENT (Irj) - - mA 



S 
z 
< 



< 
S 



100 

50 

30 
20 

10 

5 
3 
2 
1 

0.5 
0.3 
0.2 



Yie 

common emitter input admittance 



(C) 









V/f*r= KV7 1/* - 1mA 












I 












,>» 300MHz 




















^ 100MHz 










30MHz 
























10MHz 























0.2 0.3 0.5 1 2 3 5 10 

INPUT CONDUCTANCE (gie) - - mmho 

Yfe 

common emitter forward transfer admittance (E) 







VCE = 5V, lr= 1mA 


















300MHz 






















, 100MHz 








" 30MHz 












10MHz 








, 









20 30 



50 70 1 00 



8 
< 



FORWARD TRANSFER CONDUCTANCE (gfe) - - mmho 



Yoe 

common emitter output admittance (D) 



0.6 
0.3 
0.2 

















VcE = 5V,lc= 1mA 














































Ml 


Z ' 


















MH 


301 
















100 


! 
















KM 


tHl 




























































• 10MHz 

I I 

















0.005 0.01 0.02 0.03.05 0.1 0.2 0.3 0.5 1 

OUTPUT CONDUCTANCE (goe) - - mmho 

> 

Yre 

common emitter reverse transfer admittance (F) 



5 

0.3 
0.2 

0.1 
0.05 









VCE = 5V,I C = 1mA 








































100MHz 






















' 30t 


»Hz 




















d 10MHz 

I I 







0.3 0.5 07 1 2 3 5 

REVERSE TRANSFER CONDUCTANCE (-gre) - -■umho 



562 



40P 40P 




LI SWG//22, N -5.5T. Dia = 4mm 
L2 SWG#22, N=4T, Dia -4mm 
L3 SWG#22,N-4T, D. B -3mm 



L4 SWG #28, N - 20T, Dia = 3mm L = 0.75^iH 
L5 95T : 8T, L = 600/JH, 0.(1 ■ 300 
L7 N ■ 1 .5T, PHILIPS #431 2—020—34401 



SLEEP slow 

FAST *L*fiM' 

SNOOZE 



L6 



T1-T3 



T4 



T5 



T6 



T7 



T8 



3!G ^2 Dig M 



TOKO n VMO- 2A1B8R 



TOKO09AAC- 7AI21A 



TOKO" IS4FC - BA5243N TOKON B.ZC - 1 A6»1« 



TOK0» VCC -4A3I5EK 



FM performance (88-108 MHz) 

• 30dB quieting sensitivity: 5/*V 

• limiting sensitivity: 20/iV 

• AM rejection: 40dB 

• AFC holding range: 800KHZ 

• Bandwidth: 180 KHz 



AM performance (525-1650 KHz) 

• maximum sensitivity; IOOjUV/M 

• 20dB quieting sensitivity: 280/iV/M 

• selectivity ± 10KHz: -28dB 

• AGC figure of merit: 40dB 

• overload distortion: 6% 



AUDIO performance 

• gain at 1 KHz: 200 

• 10% THD output power. 900mW 

• frequency response: 70Hz— 12KHz 

• typical system dist: 0.8% 

• alarm tone frequency: 600Hz 



- 



Figure A. AM/FM clock radio 







(NdNHCttiN 



yw\ National 

KA Semiconductor 



NR461(NPN) low-noise RF/IF transistor 



features 

■ Low Ccb for excellent RF stability 

■ High Roep for simplified RF coupling designs 

■ 70mV typical V CE (sat) characteristics at 
l c = 10 mA, and l B = 0.5 mA 

■ 1.1 dB typical noise figure at 1 MHz 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ MW/SW/CB radios 

■ 0.1 to 50 MHz frequency converters 

■ 455KHZ to 10.7 MHz IF stages 

■ Low-power RF oscillators 



[T| package and lead coding 



TO-92 




PACKAGE CODE 




LEAD 


TO-92 


1 


2 


3 


E 


E 


B 


C 


F 


E 


C 


B 


H 


C 


B 


E 



|2j maximum ratings 



PARAMETER 


SYMBOL 


RATING 


UNIT 


Collector-Emitter Voltage 


V C EO 


30 


v D c 


Collector-Base Voltage 


V CB 


35 


v dc 


Emitter-Base Voltage 


Veb 


4 


v D c 


Collector Current (continuous) 


l c (max) 


30 


mAoc 


Power Dissipation (T A = 25°C) 


P D 


0.6 


W 


Power Dissipation (T c = 25°C) 


Pd 


1.0 


W 


Thermal Resistance 


0JA 


208 


°C/W 




8jC 


125 


°C/W 


Temperature, Junction and Storage 


Tj, Tstg 


-55 to + 150 


°C 



3 ordering information 



NR461XX 



PACKAGE/LEAD CODE 

refer to (Tj 



HFE GROUPING 

refer to [f] 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


DV CEO 


Pfillprtnr-Emitlpr ^u^tainina Voltaop 


l c • 1 mA 


30 






v 


DV CBO 


fVil Iprtnr-Ra^p Rrpafcrtnwn Vnltaae 


| c = 1 0O/iA 


35 






v 


BV E bo 


Emitter-Base Breakdown Voltage 


l E = 10/nA 


4 


5.5 




V 


'CBO 


Collector-Base Leakage Current 


V CB = 30V 






0.1 


IUA 


V BE (sat) 


Base-Emitter Saturation Voltage 


lc = 10 mA, l B =0.5 mA 




760 


950 


mV 


V CE isatj 


uonecror-cmmer odiurdiion vuiidyc 


lr = 10 mil In = n R mA 




7fl 


onn 


in v 


Ccb 


Common Emitter Collector 


V CB " 10V, f = 1 MHz 




0.9 


1.1 


pF 




Feedback Capacitance 












Roep 


Common Emitter Output Resistance 


l c = 1 mA, V C E - 5V 














f = 455 KHz 


100 






KOhm 






f = 10.7 MHz 


20 






KOhm 


ft 


Current Gain Bandwidth Product 


l c = 1 mA, V C e " 5V 


180 


300 




MHz 



4 electrical characteristics t c = 25°c 



5| HFE groupings 



GROUPING 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


RATIO 


E 


DC Current Gain 


l c = 1 mA, V C e " 5V 


30 


38 


50 


1 


1.6 


F 


DC Current Gain 


l c = 1 mA, V C e = 5V 


45 


58 


75 


1 


1.6 


G 


DC Current Gain 


l c = 1 mA, V CE = 5V 


68 


85 


110 


1 


1.6 


H 


DC Current Gain 


l c = 1 mA, V CE =5V 


100 


127 


160 


1 


1.6 


R 


DC Current Gain 


l c = 1mA.V CE = 5V 


20 


32 


50 


1 


2.4 


S 


DC Current Gain 


l c = 1 mA, V CE = 5V 


45 


70 


110 


1 


2.4 


T 


DC Current Gain 


l c = 1mA,V CE = 5V 


100 


150 


240 


1 


2.4 



physical dimensions 

TO-92 



[f] max power dissipation 




s 

1 
1 

-r ' a 
I 

§ 10 

z 

0.8 
_ 

1 0.6 



O 0.2 



























T=C 




EMPE 


RATI 


RE 












1 = 


1 ' 

AMBI 


1 1 

:NT ' 


1 1 

EMPE 


1 

RATI 


JRE 

























































26 60 75 100 1 26 150 175 200 
TEMPERATURE (T) °C 



5-65 



2 0.! 
< 



0.1 



I1FE1/I-IFE2 

current linearity 



(A) 





















V CE * 5V 























































































































































0.1 0.3 1 3 10 

COLLECTOR CURRENT He) - - mA 



50 



vucodiw v be ion; 

collector /base to emitter voltage 



V B E (ON) - - V C E - 5V 
VCE (SAT) HFE = 20 




0.3 1 3 10 

COLLECTOR CURRENT (l C > - - mA 



< 
l- 
o 



100 



Yie 

common emitter input admittance 



(C) 



30 
10 
3 
1 

0.3 
0.1 
0.03 



0.01 
0.2 







VCE = 5V,lc = 1mA 
















45MHz 












1 / 












10MHz af 






















2MHz J 














455KH2 J 































0.3 0.6 0.7 1 

I NPUT CONDUCTANCE (gie) - - mmho 

Yfe 

common emitter forward transfer admittance (E) 



30 
10 
3 
t 

0.3 
0.1 









VCE = 5V,lc = 1">A 






















Jinn/ 





























- 10MHz - 




































V- 2MHz J 












1 














• 4S 


5KHz 



















10 20 30 50 70 100 200 



E 

a. 


10K 


1 
1 


3K 


1 


IK 






UJ 

o 


300 




BE 




< 


100 


| 




LJJ 


30 


O 


CO 




=> 


10 


CO 




1- 




=> 


3 


Q_ 




t- 




=> 


1 


O 


3 



Yoe 

common emitter output admittance (D) 













VCE = 


5V. Ic= 1mA 


















































































I 45MHz 




















































P 10MHz 
















I 


















u 


r i 


















2MHz _ 


















I 




































455KHz 
















1 















I 



5 7 10 20 30 60 70 100 200 300 
OUTPUT CONDUCTANCE (goe) - - /mho 

Yre 

common emitter reverse transfer admittance (F) 



300 
100 



1 


r 


VCE = 5V, lc = 1mA 


45MHz 




















10MH 


z 


































!MHz 












1 ' 




















( 


* 455KHZ 










1 









FORWARD TR 



ANCE (gfe) - - mmho cr 



0.1 0.2 0.3 0.5 0.7 1 2 

REVERSE TRANSFER CONDUCTANCE <-gre> - - jurtlho 



5-66 



3461ES NR461ES NR461ES ' 




FM performance (88-108 MHz) 

• 30d8 quieting sensitivity 2{iV 

• limiting sensitivity: 7/iV 

• AM rejection: 40dB 

• AFC holding range: 800KHZ 

• stereo separation: 40dB 



AM performance 1525-1650 KHz) 

• maximum sensitivity: 100)JV/M 

• 20dB quieting sensitivity: 280/JV/M 

• selectivity ±10KHz: -28dB 

• AGC figure of merit: 52dB 

• overload distortion: 3% 



TO«0«VHC 1AMS0X I0KO0RJ 

AUDIO performance 

• 10% THD output power: 3W + 3W 

• frequency response: 50Hz — 15KHz 

• channel separation: 45dB 

• tone control range: ±10dB 

• typical system dist: 0.5% 



Figure A. AM/FM/Cassette Home Stereo Circuit 



(NdN)i9f«N 



National 
dJM Semiconductor 



NR041 (NPN) low- level signal switching transistor 

package and lead coding 



features 



■ 40m V guaranteed Vce (sat) characteristics at 
lc = 1mA and lg = 0.1mA 

■ Linear collector characteristics 

■ 1dB typical wide-band Noise Figure 

■ "Epoxy B" packaging concept for excellent reliability 

applications 

■ ALC device for CB microphone circuits 

■ Cassette circuits 

■ Audio signal switches 

■ Envelope modulators for musical equipment 



TO-92 




PACKAGE CODE 




LEAD 


TO-92 


1 


2 


3 


E 


E 


B 


C 


F 


E 


C 


B 


H 


C 


B 


E 



maximum ratings 



PARAMETER 


SYMBOL 


RATING 


UNIT 




Collector-Emitter Voltage 


Vceo 


20 


Vdc 


Collector-Base Voltage 


V CB 


20 


Vdc 


Emitter-Base Voltage 


v EB 


5 


v DC 


Collector Current (continuous) 


lc (max) 


30 


mA DC 


Power Dissipation (T A = 25°C) 


P D 


0.6 


W 


Power Dissipation (Tc = 25°C) 


P D 


1.0 


W 


Thermal Resistance 


0JA 


208 


°C/W 




0JC 


125 


°C/W 


Temperature, Junction and Storage 


Tj, Tstg 


- 55 to +1 50 


°c 



3 ordering information 



NR041 X 



-PACKAGE/LEAD CODE 
refer to |T) 



5-68 



I 4 | electrical characteristics t c = 25°c 



SYMBOL 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNIT 


BV CE0 


Collector-Emitter Sustaining Voltage 


l c = 1 mA 


20 






V 


BV CB0 


Collector-Base Breakdown Voltage 


l c = 100/jA 


20 






V 


bVebo 


Emitter-Base Breakdown Voltage 


I e = 10mA 


5 






V 


'ceo 


Collector-Emitter Leakage Current 


V CE = 15V 






1 


£a 


ICBO 


Collector-Base Leakage Current 


V CB = 15V 






50 


nA 


Iebo 


Emitter-Base Leakage Current 


V EB =4V 






0.1 


fA 


V BE (sat) 


Base-Emitter Saturation Voltage 


l c = 1 mA, l B = 0.1 mA 




0.65 


0.8 


V 


V CE (sat) 


Collector-Emitter Saturation Voltage 


lc = 1 mA, l B = 0.1 mA 




25 


40 


mV 


COb 


Collector Output Capacitance 


V CB = 10V, f = 1 MHz 




2 




pF 


NF 


Noise Figure 


l c = 10uA, V CE = 5V 
R s = 10K. BW= 15.7 KHz 




1 




dB 



5 physical dimensions 



6 max power dissipation 




5-69 



[ 7 | typical performance characteristics 



LU 
< 



5000 
— I 

o 

> 2000 
DC 

LU > 

§! 



VcE(sat)/VBE(sat) 

collector /base to emitter saturation voltage 



O LU 

h- 00 

LU > 

to H, 

s " 
> 

cc ' 
o 



500 
200 
50 
20 



TEST TIME = 300mS 
1 — r— 

780mV, 



vbe(sat) HFE = 10 



VCE(SAT) HFE = 10 




0.01 0.03 0.1 0.3 



COLLECTOR CURRENT 0c) - - mA 



30 
?0 



Cob 

output capacitance 



< 

a- 
< 



< 

cc 

o 



=! 1 

















EMITTER-OPEN 



























































































































0.1 0.3 1 3 10 30 100 

COLLECTOR TO BASE VOLTAGE (Vcb) - - V 



Attenuation 

attenuation vs control voltag e 



60 
0.1 

















SEE TEST CIRCUIT 










TEST 


CI 




I 

IIT R 
























































































1 




ria 


ni 














\ 




NCi i i 



0.3 1 3 10 30 

CONTROL VOLTAGE (V cont ! - - V 



I > 

I I 

-o I 

> 

1 § 

s > 

t LU 

2 <= 

l| 

CC o 

o > 

a cc 

a. o 



THD-Vo/Vcont 











TEST CIRCUIT A 
V||\| » 20mV r.m.s. 








THE 


■v„- 

TCIRC 
= 50mV 


THD-V 










TES 
VlN 


JIT 
r.m 


5 ^ 
s. / 


n 



















0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 

OUTPUT VOLTAGE TO INPUT VOLTAGE RATIO 



Dynamic range Test circuits 




NOTE: ATTENUATION - 20 log, 



5-70 



8 typical applications 



MIC i — 

of 

HEAD J— 

5f 



r 



-^- nm ^ 100K im^f 

B.8K 100 

— i — W * * -W- 

w 

— )l — 



ERASE 
ANO 
BIAS 
CIRCUIT 



Ops 



270K 



-)| — m- 




. — 1(- 



680K 



"O w- 



220pF 



=L S.SK 5 



)BEC 

Opb 



01 NR04IE Q2 NB011EU IC ALM387N 



Figure A. 60dB ALC Range Record/Playback Preamplifier 



-6- 



V CC = UV 
~l ■ 10mA 




« — 

LM380> 



260mV 



6B0K 



I" 



Q1 — Oil NR041E 



Figure B. 10 Channel Program Selector 




SQUELCH 

Figure C. Squelch Circuit 



IK Hi 
SINE WAVE 
GENERATOR 




Figure D. Ringing Tone Generator 



5-71 



CM 
O 

(0 
W 
0) 

o 
o 




National 
Semiconductor 




Process 02 NPN Small Signal 



DESCRIPTION 

Process 02 is a non-overlay double diffused, silicon 
device. 

APPLICATION 

An economical device, good for all-around applica- 
tions from DC to low radio frequencies. Ideal for 
use in audio, radio and television applications. 

PRINCIPAL DEVICE TYPES 

TO-92: MPS-A20 

MPS-6573-6 



PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BV C E0 


IC = 1 mA, Ib = 


40 






V 


BVEBO 


If = 100 mA, lc= o 


4.0 






V 


ICBO 


V C B = 30V, l E = 




100 




nA 


HFE 


IC = 5 mA, VcE = 10V 


40 


400 






VBE(ON) 


IC= 5 mA, V CE = 10V 






0.85 


V 


VCE(SAT) 


IC = 10 mA, Ib = 1 mA 






0.25 


V 


ft 


l C = 5 mA, V C E = 10V, f = 100 MHz 


125 






MHz 


Cob 


VCB= 10V, I £ = 0, f = 100 kHz 






4.0 









m National Process 04 NPN Small Signal 

£m Semiconductor 

DESCRIPTION 

Process 04 is a non-overlay double diffused silicon 
epitaxial device. Complement to Process 71. 

APPLICATION 

This device was designed for low noise, high gain, 
general purpose amplifier application. From 1 mA 
to 100 mA collector current. 

PRINCIPAL DEVICE TYPES 

TO-18 BC107 Series 

TO-92IECB) 2N2923 Series 
TO-92IEBC) MPS2923 Series 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


NF (spot) 


l c = 200 mA, V ce = 5V 
f = 1 kHz, R s = 2k 




2.0 


4.0 


dB 


TO 18 


c* 


V CB = 10V, f = 1 MHz 




3.2 


3.5 


pF 


TO 18 


c*. 


V EB = 0.5V, f = 1 MHz 




7.6 


8.5 


pF 


TO-18 


% 


V CE s 5V, l c = 10 mA 


150 


350 




MHz 




h FE 


V C e ■ 5V > 'c = 100 mA 


50 


250 


500 






h FE 


V CE = 5V, l c = 2 mA 


50 


250 


750 






h FE 


V CE * 5V, l c = 100 mA 


75 


250 


300 






h FE 


V C E = 1V, l c = 100 mA 


30 


100 


150 






V CE(sat> 


l c ? 10 mA, l B = 1 mA 




0.040 


0.080 


V 




V CE(sat) 


l c = 100 mA, l B = 10 mA 




0.120 


0.180 


V 




V BE(sat) 


l c = 10 mA, l B = 1 mA 




0.75 


0.85 


V 




V BE(sat) 


l c = 100 mA, l B = 10 mA 




0.89 


0.95 


V 




BV CBO 


U = 10^A 


50 


40 


120 


V 




BVceo 


l c = 10 mA 


20 


45 


55 


V 




BV EBO 


l E = 10 uA 


7.0 






V 




'CBO 


V CB - 40V 






10 


NA 




'ebo 


V EB = 4V 






10 


NA 






6-4 



Process 04 



Pulsed DC Current Gain us 
Collector Current 



1 1 II 1 

V - = *v 


























































































































r, 


= 1 


5 


: 































































































































Base-Emitter On Voltage us 
Collector Current 



l c - COLLECTOR CURRENT (mA) 




Base-Emitter Saturation Voltage 
us Collector Current 



- 


1 

c/ 


1 1 1 












































25 




















"T 


c - 


































































T 




C 















































































COLLECTOR CURRENT ImAI 



.01 .1 1 10 100 

lc - COLLECTOR CURRENT (mAl 



Collector-Emitter Saturation Contours of Constant Gain Input Capacitance vs 

Voltage vs Collector Current Bandwidth Product (Fjl Reverse Bias Voltage 




l c - COLLECTOR CURRENT (mA) 



Output Capacitance vs Reverse 
Bias Voltage 















II Ml 
i c r ° 


li 
1 j 














( = i 











































- 













































Maximum Power 
Dissipation vs 
Ambient Temperature 




REVERSE BIAS VOLTAGE IV] 



50 100 150 200 
T a AMBIENT TEMPERATURE < C) 



Maximum Power Dissipa- 
tion vs Case Temperature 




i ° 



100 150 200 
T c - CASE TEMPERATURE 10 



6-5 



Noise Figure vs Source Noise Figure us Collector 

Resistance Current 1 Noise Figure vs Frequency 





National 
Jut Semiconductor 




Process 05 NPN Darlington 



DESCRIPTION 

Process 05 is a monolithic double diffused, silicon 
epitaxial Darlington. 

APPLICATION 

This device is designed for applications requiring 
extremely high current gain at collector currents 
to 1 Amp. 

PRINCIPAL DEVICE TYPES 

TO-92, MPS-A12 (EBC), 2N5306 (ECB) 



o 
o 
o 
to 
to 

o 

01 



PARAMETER 



TEST CONDITIONS 



Ml N 



TYP 



MAX 



UNITS 



NOTES 



NF 

h FE 

V CE(SAT) 



h F E 
BV CES 
'CES 
ICBO 

!ebo 



l c = 1 mA. V CE - 5V, R s = 100 k, f = 1 kHz 

V CB = 10V, l E =0, f = 1 MHz 

l c = 10 mA, V CE = 5V 
l c = 100 mA, V CE = 5V 

10 mA, 0.01 mA 
100 mA, 0.1 mA 

10 mA, 5V 
100 mA, 5V 

l c = 10 mA, V CE = 5.0V, f = 1 kHz 

l c = 100 /jA 

V CE = 15V, V BE =0 

V CB = 15V,I E =0 

V EB = 10V, l c = 



5,000 
5,000 



2 
4 

50,000 
100,000 



1.2 
1.25 



30 



80,000 
40 



200,000 
250,000 

1.0 
1.5 

1.4 
2.0 



50 
100 
100 
100 



dB 
pF 



V 
nA 
nA 
nA 



6-7 



Process 05 



DC Pulse Current Gain 
vs Collector Current 



Base-Emitter On Voltage 
vs Collector Current 



1 1 


1! 
SV 





















































































































































































































I MO 



Maximum Power Dissipa- 
tion vs Case Temperature 



■ 

□ 

£ 

=> 
S 

i 

J ■ 







































\l 


033 


ISIE 


EL) 












ST 




























J 


IKC 


VAft 











































S Ml 

h 

1 



j . 



Maximum Power Dissipation 
TO-202 vs Case and Ambient 
Temperature 



T c - CASf TEMFERATURE CCI 




Maximum Power 
tion vs Ambient 
Temperature 




SO 100 ISO 200 

T A - AMBIENT TEMPERATURE CCI 

*One square inch of copper run 



Collector-Emitter Saturation 
Voltage vs Collector Current 



t > 

X u 

Hi ,» 

a. « 

6 = 



I a 



l c - COLLECTOR CURRENT ImA) 



Base-Emitter Saturation Voltage 
vs Collector Current 




i 

i 

J 



Input Capacitance vs 
Reverse Bias Voltage 




Output Capacitance vs 
Reverse Bias Voltage 




REVERSE VOLTAGE (V) 



Small Signal Currant < 
Collector Current 




Collector-Base Diode R< 
Currant vs Temperature 




Co I lector- Emitter Break- 
down Voltage vs Resistance 




6-8 



yWA National 

4Lm Semiconductor 



Process 07 NPN Small Signal 



DESCRIPTION 




Process 07 a nonoverlay, double diffused, silicon 
epitaxial device. Complement to Process 62. 

APPLICATION 

This device was designed for low noise, high gain 
general purpose amplifier applications. From 1 ,uA 
to 25 mA collector current. 

PRINCIPAL DEVICE TYPES 



TO- 18 
TO-92 



2N930 

2N5088 (EBC), 2N3392 (ECB) 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


NF (spot) 


l c = 10 /jA, V ce = 5V, R s = 10k, f = 100 Hz, 
P BW = 20 Hz 




3 


10 


dB 




NF (spot) 


P BW = 200 Hz 




1 


3 


dB 




NF (spot) 


l c = 10 mA, V ce = 5V, R s = 10k, f = 10 kHz, 
P BW = 2 kHz 




1 


3 


dB 




NF (wide band) 


l c = 10,uA,VcE=5V,R s = 10k, 
P BW = 15.7 kHz 




1 




dB 




hfe 


l c = 500 mA, V ce = 5V, f = 20 MHz 


5 


7 








C cb 


V CB " 5V 




1.7 


2.5 


pF 


TO-18 


c eb 


V EB = 0.50V 




4.5 


6.0 


pF 


TO-18 


h FE 


l c - 1 juA, V CE = 5V 


35 


170 


450 






h FE 


l c - 10mA.V CE =5V 


45 


230 


670 






h FE 

hFE 


l c = 100 fiA, V CE = 5V 


60 


300 


830 






le = 500 mA, V CE = 5V 


65 


335 


950 






h FE 


l c = 1 mA, V CE = 5V 


70 


350 


1000 






hFE 


l c = 10 mA, V CE = 5V 


65 


320 


900 






V CE(SATI 


l c = 1 mA, l B = 0.10 mA 




0.06 


0.10 


V 




V CE(SAT) 

Vbeisati 


l c = 10 mA, l B = 1 mA 




0.08 


0.15 


V 




l c = 1 mA, l B ' 0.1 mA 




0.65 


0.75 


V 




V BE(SAT) 


l c = 10 mA, l B = 1 mA 




0.70 


0.85 


V 




BVcEO 


l c = 10 mA 


60 


80 


100 


V 




BVcBO 


l c = 100 uA 


60 






V 




BV EB0 


l c = 10juA 


8 






V 




'CBO 


V CB = 45V 






10 


nA 




'ebo 














V EB = 4V 






10 


nA 





6-9 



Pulsed DC Current Gain 
vs Collector Current 

























































































































































































































- 






V«-SV 
















T A -M*C 



Small Signal Current Gain 
vs Collector Current 




.1 i w in oi .1 i io loo 



Base-Emitter On Voltage 
vs Collector Current 




l c - COLLECTOR CURRENT lmA> 



l c - COLLECTOR CURRENT (mA) 



Collector Saturation 
Voltage vs Collector 
Current 



S o-is 
< 

> 0.20 

| 0.18 

I ... 

a 

5 0.05 



1 II 


i 























































































































V 


























♦ 


1 


c 









































































01 10 II I 

lc - COLLECTOR CURRENT (mft) 



Input and Output 
Capacitance vs 
Reverse Bias Voltage 



1 ! 


























































































































\. = 































































<0 M 11.0 160 100 
REVERSE BIAS VOLTAGE (V) 



! Emitter Saturation 
Voltage vs Collector 
Current 




Normalized Collector 
Cutoff Current vs 
Ambient Temperature 




100 US ISO 
T„ - AMBIENT TEMPERATURE ("CI 



Contours of Constant 
Gain Bandwidth 
Product (fj) 




0.1 1.0 10 

l c - COLLECTOR CURRENT (mAl 




| . ■ m 

■? T A - AMBIENT TEM 



TEMPERATURE f C> 



Maximum Power Dissipa- 
tion vs Case Temperature 



1 - MAXIMUM POWER DISSIPATION fmW] 
























































10 


18 
























s 


\ 


•tTO-92- 






























N 






J ° 


SO 100 ISO 100 
T c - CASE TEMPERATURE (°CI 



Wide Band Noise Figure vs 
Source Resistance 



I 



53 3 



o 





V CE '5.0V | [ 






POWER BANDW 


I1T 















h 








i 














!«- 1 


an, .a J 




































_ 




3tfOi 


















































i 


III 



















Ik 2k Sk 10k 20k SOk 100k 

Rj - SOURCE RESISTANCE <fl) 



Contours of Constant 
Narrow Band Noise 
Figure 




1 10 100 1000 

l c - COLLECTOR CURRENT ijiA) 



6-10 



Narrow Band Noise 
Figure 




lc - COLLECTOR CURRENT (pAJ 



Narrow Band Noise 
Figure 




COLLECTOR CURRENT <uA) 



Contours of Constant 
Narrow Band Noise 
Figure 




not 0.1 to to 

l c - COLLECTOR CURRENT ImA] 



Noise Figure vs 
Frequency 




io-> io-» io-> 10-' i 10 io= 

t- FREQUENCY (MHil 



SMALL SIGNAL CHARACTERISTICS (f - 1.0 kHz) 



SYMBOL 


CHARACTERISTIC 


TYP. 


UNITS 




TEST CONDITIONS 


h ie 


Input Resistance 


15 


kn 


'c 


= 1.0 mA V CE = 5.0V 


n oe 


Output Conductance 


15 


umho 


lc 


= 1.0 mA V CE = 5.0V 


Ke 


Voltage Feedback Ratio 


425 


X10" 6 


lc 


= 1.0 mA V CE =5.0V 


hfe 


Small Signal Current Gain 


400 




lc 


= 1.0mA V CE = 5.0V 




Input Resistance 


27 


ohms 


lc 


= 1.0 mA V CB = 5.0V 




National 
£m Semiconductor 



[ — ~ ' ~ 



nPL, 



in 



10.203) 
0010 
10.7621" 



0055 0.030 
.1337) (0 762) 



Process 08 NPN High Voltage 

DESCRIPTION 

Complements Process 73. 
APPLICATION 

This device was designed as a general purpose 
amplifier and switch for applications requiring 
high line voltages. 

PRINCIPAL DEVICE TYPES 

TO-39 2N3501 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


BVceo 


l c = 10 mA 


100 


160 


185 


V 




BVcBO 


l C = 10mA 


100 






V 




bVebo 


l E = 10/uA 


6 






V 




ICBO 


V CB " 50V 






50 


nA 




'ebo 


V EB =4V 






25 


nA 




hpE 


l c = 0.1 mA, V CE = 10V 


20 


40 








h F E 


l c = 1 mA, V CE = 10V 


25 


70 








hFE 


l c = 10 mA, V CE = 10V 


35 


95 








n FE 
h FE 

V CE(SATI 


l c = 150 mA, V CE = 10V 
l c = 300 mA, V CE = 10V 
l c = 150 mA, l B = 15 mA 


40 

15 


100 
40 


300 












0.25 


0.4 


V 




V BE(SATI 


l c = 150 mA, l B = 15 mA 




0.9 


1.2 


V 




Cob 


V CB = 10V 




7.5 


10 


pF 




C|B 


V EB = 0.5V 




65 


80 


pF 




f T 


l c = 20 mA, V CE = 20V, f = 100 MHz 


150 


200 




MHz 















6 12 



Process 08 






6-13 



Zg\ National 

ij Semiconductor 



Process 09 NPN Medium Power 



DESCRIPTION 




Process 09 is a nonoverlay double diffused silicon 
epitaxial device. 

APPLICATION 

This device was designed for general pur pose audio 
amplifier applications at collector currents to one 
Amp. 

PRINCIPAL DEVICE TYPES 

TO-92 CS9013 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Cob 


v CB = iov 




5 


10 


pF 


C| B 


V EB - 5V 




25 


35 


pF 


NF 


V CE ' 10V. I c = 1 mA 




1.0 




dB 


<T 


R s = Ik.f = 1 kHz 

V C E = 10V, l c = 100 mA 




400 




MHz 


h FE 


V CE = 10V, l c = 1 mA 


50 


170 


290 




n FE 


V CE • 1.0V, l c = 50 mA 


60 


200 


350 




h FE 


V CE = 1.0V, l c = 500 mA 


50 


160 


280 




h FE 


V CE S 10V, l c = 1A 


35 


120 


200 










VCE(SAT) 


l c = 150 mA, l B = 15 mA 




0.09 . 




V 


V CE(SATI 


l c = 500 mA, l B = 50 mA 




0.24 




•V 


V BE(SATI 


l c = 150 mA, l B = 15 mA 




0.86 




V 


V BE (SAT) 


l c = 500 mA, l B = 50 mA 




1.0 




V 


BVcBO 


l c = 100 M 




100 






BVcEO 


l c = 10 mA 


20 


25 


30 




BV EBO 


l E = 1 M A 




7.5 






'CBO 


V CB = 40V 






50 


nA 


!ebo 


V EB = 4.0V 






50 


nA 



NOTES 



6-14 




Maximum Power 
Dissipation vs 
Case Temperature 




50 100 150 

T c - CASE TEMPERATURE ( 



Collector-Base Diode 
Reverse Current vs 
Temperature 




25 50 75 100 125 
Tj - JUNCTION TEMPERATURE ( CI 



Col lector-Emitter Saturation 
> Voltage vs Collector Current 

S 0,6 




1.0 10 100 1000 

l c - COLLECTOR CURRENT (mA) 



Base- Emitter Saturation 
Voltage vs Collector 



3 12 

1 



5 8 

a 



j 

S 0.2 



! Mill 












"ii 







































































































Capacitance vs Reverse 
Bias Voltage 



















— 
tm 


1 l l 
































































\c.„ 








































































































c 






= 





























































l c - COLLECTOR CURRENT (mA) 



1 10 50 

REVERSE BIAS VOLTAGE (V) 



Contours of Constant 
Gain Bandwidth 
Product (f-r> 




10 100 1000 

l c - COLLECTOR CURRENT (mA) 



Noise Figure vs 
Frequency 




6-15 



DESCRIPTION 




Process 12 is a nonoverlay, double diffused silicon 
epitaxial device. Complement to Process 67. 

APPLICATION 

This device was designed for general purpose 
medium power amplifiers and switches requiring 
collector currents up to 1 amp and collector 
voltages between 80 and 140 volts. 

PRINCIPAL DEVICE TYPES 



TO-92 
TO-39 
TO-202 
TO-92+ 



MPSA05 
2N3019 
NSD106 

TN3019, TN3020 



PAR AMFTF R 


tf*;t rnMniTinw<5 

1 Co 1 t^L/lvl-SI 1 IVJIJo 


MIN 


TYP 


MAX 


UNITS 


NOTES 


'on 


l c = 150 mA, l B1 = 15 mA 




50 


60 


ns 


Fig. I 


toff 
hf. 

re 


l c = 150 mA, l B2 = 15 mA 




400 


500 


ns 




l c = 50 mA, V CE = 10V, f = 20 MHz 


4.0 


6.5 








Ccb 


V CB = 10V 




6.5 


10 


pF 


TO-39 




v EB u -° 




50 


fin 


Pr 




NF 


l c = 100/iA, V ce = 10V, R s = 1k 
f= 1 kHz, PBW = 200Hz 




1.5 


4 


dB 




h FE 


l c = 100 mA, V ce = 10V 


20 


100 








h FE 


l c = 1 mA, V CE = 10V 


30 


130 








h FE 


l c = 10 mA, V CE = 10V 


40 


150 








h F E 


l c = 150 mA, V CE = 10V 


40 


170 


300 






r>FE 


l c = 500 mA, V CE = 10V 


30 


130 








N=E 


l c = 1A, V CE = 10V 


20 


40 








V CE(SAT) 


l c = 100 mA, l B = 10 mA 




0.1 


0.2 


V 




V CE(SAT) 


l c = 500 mA, l B = 50 mA 




0.25 


0.5 


V 




V BE(SAT) 


l c = 100 mA, l B = 10 mA 




0.82 


0.90 


V 




V BE(SAT) 


l c = 500 mA, l B = 50 mA 




1.0 


1.20 


V 




BV CEO 


l c = 10 mA 


65 


80 


100 


V 




BV CBO 


l c = 100 juA 


120 






V 




BVces 


l c = 10 UA 


120 






V 




BV EBO 


l c = 10/jA 


7 






V 




'CBO 


V CB = 90V 






50 


nA 




'ebo 


V EB = 5V 






50 


nA 





6-16 



Process 12 



Pulsed DC Current Gail 
vs Collector Current 



Base-Emitter On Voltage 
vs Collector Current 



Maximum Power 
Dissipation vs 
Ambient Temperature 




0.1 t-0 10 100 1.000 10.000 
Ic - COLLECTOR CURRENT (mA) 



l c - COLLECTOR CURRENT (AMPSI 



1000 £ 



| 50 100 150 200 

T A - AMBIENT TEMPERATURE CO 

"One square inch of copper run 



Maximum Power 
Dissipation vs Case 
Temperature 







































\l 


39 


(STEEL) 






















— 


— 
















ro-! 


(K0 


VAR 










































I 50 100 150 200 

T C -CASE TEMPERATURE (°C) 



Collector Reverse Current 
vs Ambient Temperature 



Emitter Cutoff Current 
vs Ambient Temperature 




Small Signal Current 
Gain at 20 MHz 





















f * 20 MHi 










































V 


BB- 


IQv 
































































































































































H 1 


1J 


\ 
























I 







Collector-Base and Emitter 
Base Capacitance vs 
Reverse Bias Voltage 



u 88 

s 









1-1 


MHi 




























e '0 















REVERSE BIAS VOLTAGE |1 



Noise Figure vs 
Collector Current 




Noise Figure vs Frequency 




Collector Saturation 
Voltage vs Collector 
Current 




J 0.1 1.0 10 100 1.000 10 
* Ic - COLLECTOR CURRENT (mA) 



Base Saturation Voltage 
vs Collector Current 





i 


1 
















10 


























i 








I 


























1 




•25 

ik 1 
























































1 T 




•10 


c 











































0.1 1.0 10 1 00 1.000 10.01 



Safe Operating Area TO-39 
With "Wake Field" Type 
296-4 Heat Sink 




V,,- COLLECTOR EMITTER VOLTAGE tV| 



Switching Times vs 
Collector Current 




lc - COLLECTOR CURRENT (mA) 



6-17 



Process 12 



Maximum Power Dissipation 

Turn On and Turn Off Safe Operating Area TO-202 vs Case and Ambient 

Times vs Collector Current TO-202 Temperature 




FIGURE 1. t on , t off Test Circuit 



SMALL SIGNAL CHARACTERISTICS (f = 1.0 kHz) 



SYMBOL 


CHARACTERISTIC 


TYP. 


UNITS 


TEST CONDITIONS 




Input Resistance 


3000 


ohms 


l c = 1.0 mA 


V CE = 5.0V 


hoe 


Output Conductance 


8.0 


fimhos 


l c = 1.0 mA 


V CE = 5.0V 


h ro 


Voltage Feedback Ratio 


2.1 


x10" 4 


l c = 1.0 mA 


V CE = 5.0V 


hfe 


Small Signal Current Gain 


100 




l c = 1.0 mA 


V CE = 5.0V 















TYPICAL COMMON EMITTER CHARACTERISTICS (f = 1.0 kHz) 




6-18 



VW\ National 

&M Semiconductor 




Process 13 NPN Medium Power 



DESCRIPTION 

Process 13 is a nonoverlay. Complement to Process 
63. 

APPLICATION 

These devices were designed for use as medium 
power amplifiers and switches requiring collector 
currents of .1 mA to one Amp. 

PRINCIPAL DEVICE TYPES 

TO 92 2N4401 (EBC), 2N3704 (ECB) 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


ton 


l c = 150 mA, I B 1 - 15 mA 




25 


35 


ns 




toff 


l c = 150 mA, l B 2 = 15 mA 




200 


285 


ns 




hfe 


l c = 20 mA, V CE = 10V, f = 100 MHz 


1.8 


2.5 








NF (spot) 


l c = 100 AlA, V CE = 10V 

R s = 1 kfi, f = 1 kHz, PBW = 200 Hz 




1.2 


4.0 


dB 




Cob 


V CB = 10 V 




4.5 




pF 




c ib 


V EB - .5V 




22 




pF 




h FE 


V CE = 1.0V, l c = 100 juA 


15 


80 


150 






h F E 


V C E ■ 10V, l c = 1.0 mA 


25 


110 


250 






h FE 


V C E ■ 10V, l c - 10 mA 


35 


135 


300 






h FE 


V C e ■ 10V, l c = 150 mA 


40 


140 


300 






"EE 


V CE ' 1 0V, l c = 500 mA 


25 


100 


200 






h FE 


V CE = 5.0V, l c = 1A 


15 


45 


75 






V CE(SATI 


l c = 150 mA, l B = 15 mA 




0.1 


0.2 


V 




V CE(SAT) 


l c = 500 mA, l B = 50 mA 




0.26 


0.36 


V 




V BE(SATI 


l c = 150 mA, l B = 15 mA 




0.87 


0.97 


V 




V BE (SAT) 


l c = 500 mA, l B = 50 mA 




1.0 


1.2 


V 




BV CB0 


l c i 1.0 MA 


60 


100 


140 


V 




BVcES 


l c = 10 mA 


60 






V 




BVcEO 


l c = 10 mA 


30 


40 


55 


V 




BV E BO 


l E = 1.0 mA 


6.0 






V 




ICBO 


V CB = 40V 






50 


nA 




!ebo 


V EB = 4V 






50 

' 


nA 

' 





o 
o 

<D 
W 
(A 

00 



6-19 



DC Pulse Current Gain 
vs Collector Current 




Base-Emitter On Voltage 
vs Collector Current 



1 10 100 

Ic - COLLECTOR CURRENT (mA) 































































































v 




IV. T. 


= 25 


C 










^, V ce = 10V.T fl =25 C 










• 








?5 C 







































l c - COLLECTOR CURRENT (mA) 



Maximum Power 
Dissipation vs Ambient 
Temperature 



s 


E 1600 
° MOO 

I 1200 
5 1000 
S 800 
| 600 

1 400 

^ 200 

J • 






















































Vrc 


92+ 






























Ti 






3 






































SO 100 150 20 



T« - AMBIENT TEMPERATURE ( C) 

*One square inch of copper run 



Maximum Power 
Dissipation vs Case 
Temperature 




Input Capacitance vs 
Reverse Bias Voltage 




Output Capacitance vs 
Reverse Bias Voltage 




- CASE TEMPERATURE ( C) 



REVERSE BIAS VOLTAGE (V) 



REVERSE BIAS VOLTAGE (V) 



Collector to Base Diode 
Reverse Current vs 
Temperature 




25 50 75 100 125 
JUNCTION TEMPERATURE (C) 



Collector-Emitter 
Saturation Voltage vs 
Collector Current 























1 




h 






































































































































i 


















- 

























































Base-Emitter Saturation 
Voltage vs Collector 
Current 



lc- COLLECTOR CURRENT fmAI 




1 10 100 1000 

COLLECTOR CURRENT (mA) 



6-20 




SMALL SIGNAL CHARACTERISTICS (f = 1.0 kHz) 



SYMBOL 


CHARACTERISTIC 


TYP 


UNITS 


TEST CONDITIONS 


hie 


Input Resistance 


600 


ohms 


l c = 10 mA, V CE - 10V 


h oe 


Output Conductance 


50 


/jmhos 


l c = 10 mA, V CE = 10V 


h fe 


Small Signal Current Gain 


170 




l c = 10 mA, V CE - 10V 


n re 


Voltage Feedback Ratio 


120 


x10 -6 


l c = 10 mA, V CE = 10V 




s 



National 
Semiconductor 



Process 14 NPN Medium Power 



DESCRIPTION 




Process 14 is a nonoverlay double diffused silicon 
epitaxial device. Complement to Process 67. 



APPLICATION 

This device was designed for general purpose audio 
amplifier applications at collector currents to 
500 mA. 



PRINCIPAL DEVICE TYPES 

TO-39 BFY50 
TO-92 MPS6560 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


Cob 


V CB = 10V 




8 


10 


pF 




c ib 


V EB = 0.5V 




55 


65 


pF 




h fe 


l c = 50 mA, V CE = 10V, f = 20 MHz 


5 


10 








h F E 


l c = 0.1mA, V CE = 1V 


20 


60 








h FE 


l c = 1 mA, V CE = 1V 


20 


80 








h FE 


l c = 10 mA, V CE = 1V 


20 


100 


400 






h F E 


l c = 150 mA, V CE = 1V 


45 


160 


300 






h FE 


l c = 500 mA, V CE = 1 V 


20 


70 








V CEISATI 


l c = 10 mA, l B = 1 mA 




0.04 


0.10 


V 




V CE(SAT> 


l c = 150 mA, l B = 10 mA 




0.10 


0.15 


V 




V BE(SAT) 


l c = 10 mA, l B = 1 mA 




0.70 


0.90 


V 




V 8E(SATI 


l c = 150 mA, l B - 10 mA 




0.80 


1.0 


V 




BVcEO 


lc = 1 mA 


40 


50 


60 


V 




BVcBO 


l c = 100 mA 


80 






V 




BV EBO 


l E = 10 mA 


7 






V 




ICBO 


V CB ' 30 






50 


nA 




'eBO 


V EB = 3 






50 


nA 





6-22 




DESCRIPTION 

Process 16 is a nonoverlay, double diffused, 
epitaxial silicon device. I 



APPLICATION 

This device was designed for general purpose high 
voltage amplifiers and gas discharge display driving. 



PRINCIPAL DEVICE TYPES 



TO-92 



2N5551 



■ 



PARAMETER 



TEST CONDITIONS 



MIN 



TYP 



MAX 



UNITS 



BVceo 
BV C bo 
BV EBO 

'cBO 

Iebo 
h FE 
h FE 
h FE 

V CE(SAT) 

V CE(SAT) 

VbE(SAT) 

V BE(SAT) 

h 

Cob 



lc = 
lc = 
l E - 

V CB 

V EB 

>e- 
b = 
% = 

lc = 
lc = 
lc = 
lc = 
lc = 

V CB 
V CB 

V EB 



1.0 mA 
100 uA 
10mA 
= 120V 
= 4.0V 

1 .0 mA, V CE = 5.0V 

10 mA, V CE = 5.0V 

50 mA, V CE = 5.0V 

10 mA, l B = 1.0 mA 

50 mA, l B = 5.0 mA 

10 mA, l B = 1.0 mA 

50 mA, l B = 5 mA 

10 mA, V CE = 10V, f = 100 MHz 

= 10V 

= 10V 

= 0.5V 



100 
120 
6 



50 
50 
20 



100 



155 



0.5 

0.3 

105 

132 
60 
0.07 
0.12 
0.75 
0.83 

220 
2.67 
2.53 
17 



180 



50 

50 
300 
300 

0.15 
0.25 
1.0 
1.2 
300 
6.0 
4.0 
30 



V 
V 
V 
nA 
nA 



V 
V 
V 
V 
MHz 
pF 
pF 
PF 



6-24 



DC Pulse Current Gain 
vs Collector Current 




lc - COLLECTOR CURRENT (mfl) 



Base-Emitter on Voltage 
vs Collector Current 




1 



lc - COLLECTOR CURRENT (mA) 



Process 16 



Maximum Power 
Dissipation vs 
Ambient Temperature 




50 100 150 20 
T A - AMBIENT TEMPERATURE I X) 



Maximum Power 
Dissipation vs 
Case Temperature 



I 2400 

> ztoo 



S 1200 

S 




so ioo iso ; 

T c - CASE TEMPERATURE ( C C) 



Base-Emitter Saturation 
Voltage vs Collector Current 




Collector-Emitter Saturation 
Voltage vs Collector Current 



l c - COLLECTOR CURRENT |n>A) 




lc- COLLECTOR CURRENT ImA) 



Col lector- Emitter 
Breakdown Voltage With 
Resistance Between 
Emitter- Base 




Small Signal Current Gain 
vs Collector Current 



1 III 

FREO 20 MHi 












1" 


H 

























































































































Input and Output 
Capacitance vs Reverse 
Bias Voltage 



l c - COLLECTOR 




- COLLECTOR VOLTAGE (V) 



Contours of Constant 
Gain Bandwidth 
Product (f j) 




6-25 



s 



National 
Semiconductor 



■ 



Process 19 NPN Medium Power 



DESCRIPTION 




mm 



Process 19 is nonoverlay double diffused, gold 
doped, silicon epitaxial device. Complement to 
Process 63. 

APPLICATION 

j 

These devices were designed for use as medium 
power amplifiers and switches requiring collector 
currents of 0.1 to 500 mA. 

PRINCIPAL DEVICE TYPES 



TO-92 



PN2222 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


*o n 


l c = 150 mA, l B i =15 mA 




25 


35 


ns 




'off 


l c = 150 mA, l B2 " 15 mA 




200 


285 


ns' 




n fe 


l c = 20 mA, V CE = 20V, f = 100 MHz 


2.5 


3.5 








c tb 


V CB «= 10V 




3.0 


6.0 


pF 






V EB = 0.5V 




18 


25 


pF 




NF (spotl 


l c = 100 mA, V ce = 10V 

R s = 1 kfi, f = 1 kHz, PBW » 200 Hz 




1.2 


4.0 


dB 




"FE 


l c = 100 mA, V ce = 10V 


20 


100 








h FE 


lp = 1 mA, V CE = 10V 


30 


160 








hp E 


l c = 10 mA, V CE = 10V 


40 


200 


300 






h FE 


l c = 150 mA, V CE = 10V 


45 


180 


540 






h FE 


l c = 500 mA, V CE = 10V 


25 


90 








h FE 


l c = 1A, V CE = 10V 


15 


30 








V CE(SAT) 


l c = 100 mA, l B = 10 mA 




0.12 


0.50 


V 




VcE(SAT) 


l c = 500 mA, l B = 50 mA 




0.35 


1.0 


V 




VfiEISAT) 


l c = 100 mA, l B = 10 mA 




0.90 


1:2 


V 




VbE(SAT) 


l c = 500 mA, l B = 50 mA 




1.1 


1.5 


V 




BV CEO 


l c = 10 mA 


30 


50 


60 


V 




B v cbo 


l c = 100 mA 


45 






V 




BV CES 


l c = 10 mA 


45 




85 


V 




BV EBO 


l E = 10mA 


6 






V 




'CBO 


V CB = 60V 






50 


nA 




'ebo 


V EB = 3V 






50 


nA 





6-26 



Process 19 



DC Pulse Currant Gain 
vs Collector Current 




Li 1 to 106 

It - COLL ECTOR CURRENT ta« 



Base-Emitter On Voltage 
vs Collector Currant 




le - COLLECTOR CURRENT (~AI 



Maximum Power 
Dissipation vs 
Ambient Temperature 



s soo 




T A - AMBIENT TEMPERATURE TCI 

*One square inch of copper run 

Emitter Transition and 
Output Capacitance vs 
Reverse Bias Voltage 




Maximum Power 
Dissipation vs 
Case Temperature 




Contours of Constant 
Gain Bandwidth 
Product ifj) 




TO 10 100 1.000 

l c -COLLECTOR CURRENT ImAi 



Base-Emitter Saturation 
Voltage vs Collector 
Current 




Collector-Emitter Saturation 
Voltage vs Collector 
Current 



l c - COLLECTOR CURRENT ImAI 




6-27 




National 
Semiconductor 




0JW3 



Process 20 NPN Medium Power 



DESCRIPTION 

Process 20 is nonoverlay double diffused, gold 
doped, silicon epitaxial device. Complement to 
Process 63. 

APPLICATION 

These devices were designed for use as medium 
power amplifiers and switches requiring collector 
currents of 0.1 to 500 mA. 

PRINCIPAL DEVICE TYPES 



TO-5 

TO-18 

TO-92 

TO-105 

TO-106 



2N2219A 

2N2222A 

MPS3642 

2N3643 

2N4141 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


'on 




I c = 150 mA, l B , = 15 mA 




25 


35 


ns 




toff 


l c = 150 mA, l B2 = 15 mA 




200 


285 


ns 




n fe 


l c = 20 mA, V CE = 20V, f - 100 MHz 


2.5 


3.5 








C eb 


V CB » 10V 




3.0 


6.0 


pF 




c ib 


V EB = 0.5V 




19 


25 


pF 




NF (spot) 


l c = 100 pA, V CE = 10V 




1.2 


4.0 


dB 




R s = 1 kH, f = 1 kHz, PBW = 200 Hz 






hr-E 


l c A 100 mA, V ce = 10V 


30 


100 








hp E 


l c = 1 mA, V CE = 10V 


40 


195 








h FE 


l c = 10 mA, V CE = 10V 


50 


240 


500 






h FE 


l c = 150 mA, V CE = 10V 


50 


180 


500 






h FE 


l c = 500 mA, V CE = 10V 


30 


90 








h FE 


l c = 1A, V CE = 10V 


15 


30 








VcE(SAT) 


l c = 100 mA, l B = 10 mA 




0.12 


0.50 


V 




V CE(SAT) 


l c = 500 mA, l B = 50 mA 




0.35 


1.0 


V 




V BE<SAT) 


l c = 100 mA, l B = 10 mA 




0.90 


.1.2 


V 




V BE(SAT) 


l c = 500 mA, l B * 50 mA 




1.00 


1.5 


V 




BVceo 


l c = 10 mA 


40 






V 




BVcbo 


l c = 100 ^A 


70 






V 




BVebo 


l E = 10 mA 


6 






V 




'CBO 


V CB = 60V 






50 


nA 




'ebo 


V EB =3V 






50 


nA 









































6-28 



Process 20 



DC Pulse Current Gain vs Base-Emitter On Voltage 

Collector Current vs Collector Current 




Collector Reverse Current 
vs Ambient Temperature 




Emitter Cutoff Current 
vs Ambient Temperature 




T a - AMBIENT TEMPERATURE fCl 



-AMBIENT TEMPERATURE (CI 



Maximum Power Maximum Power 

Dissipation vs Dissipation vs 

Ambient Temperature Case Temperature 







SMALL SIGNAL CHARACTERISTICS (f = 1.0 kHz) 



SYMBOL 


CHARACTERISTIC 


TYP 


UNITS 


TEST CONDITIONS 


h,. 


Input Resistance 


700 


ohms 


l c = 10mA V CE = 10V 


h„ 


Output Conductance 


120 


jimhos 


l c = 10mA V CE = 10V 


hf. 


Small Signal Current Gain 


240 




l c = 10mA V CE = 10V 


h„ 


Voltage Feedback Ratio 


460 


x10~ 6 


l c = 10mA V CE = 10V 





National 
Semiconductor 




Process 21 
NPN High Speed Switch 



DESCRIPTION 

Process 21 is an overlay, double diffused, gold 
doped silicon epitaxial device. Complement to 
Process 65. 

APPLICATION 

This device was designed for high speed saturated 
switching at collector currents of 10 to 100 mA. 

PRINCIPAL DEVICE TYPES 



TO-18 
TO-92 



2N2369A 
MPS2369 (EBCI 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


t s 


Ibi = !b2 = lc = 10 mA 




7 


13 


ns 


Fig. 1 


ton 


l c = 10 mA, I B 1 = 3 mA 




9 


12 


ns 


Fig. 2 


toff 


l c = 10 mA, l B2 = 1.50 mA 




10 


18 


ns 


Fig. 2 


hfe 


l c = 10 mA, V CE = 10V, f = 100 MHz 


5.0 


6.5 








c cb 


V CB = 5V 




2.0 


4.0 


pF 


TO-18 


Ceb 


V EB = 0.5V 




4.0 


5.0 


pF 


TO-18 


h FE 


l c = 1 mA, V CE » 1V 


30 


65 


150 






h FE 


l c = 10 mA, V CE = 1V 


30 


70 


150 






h FE 


l c fc 50 mA, V CE = 1V 


25 


55 


150 






h FE 


l c = 100 mA, V CE ■ 1V 


20 


30 


150 






h FE 


l c = 10 mA, V CE = 0.35V 


30 


65 


150 






h FE 


l c = 30 mA, V CE = 0.4V 


30 


60 


150 






VcE(SAT) 


l c = 10 mA, l B = 1 mA 




0.15 


0.2 


V 




V CE(SATI 


l c = 100 mA, l B = 10 mA 




0.35 


0.5 


V 




Vbeisati 


l c = 10 mA, l B = 1 mA 




0.80 


0.85 


V 




Vbeisat) 


l c ■ 100 mA, l B = 10 mA 




1.0 


1.5 


V 




BVcEO 


l c = 10 mA 


12 


15 


19 


V 




BV CB0 


lc = io/ja 


50 


55 


60 


V 




bv E bo 


l E = 10mA 


4.5 






V 




ICBO 


V CB = 25V 






50 


nA 




'ebo 


V EB - 3V 






50 


nA 





o 
o 

CD 

(/> 
0) 

ro 



6-31 



Pulse DC Current Gain 
vs Collector Current 



Base-Emitter On Voltage 
vs Collector Current 




2 0.4 

■ 

i 



J • 









llll! 


-1 




| W„ MIV 










■ 


C 








■ 








il 










































- 




1 














. T, 



























































































l c - COLLECTOR CUBBENTta.l 



l c - COLLECTOB CUBBENT taAl 



Collector Saturation 
Voltage vs Collector 



> 
5 

I " 

? 1.0 

S 


Current 
















-l« 


10 1 














































































1 " 




r c .« 
































8 u 
I ... 








I 


•in 






t 






c 














1 1 il 


1*1 so 



L. - COLLECTOR CURRENT Ml 



Base Saturation Voltage 
vs Collector Current 



5 0.9 
I 0.0 



















l c = 10li 


























































C 










































































ft 
















DO 


c 


























- 















































11 0.5 1 f 10 50 100 500 

l c - COLLECTOR CURRENT Ml 



Process 21 



Contours of Constant 
Gain Bandwidth 
Product (fx) 




1.0 2.0 5.0 II 20 SO 100 3 
l c - COLLECTOR CURRENT (mA) 



Emitter Transition and 
Output Capacitances vs 
Reverse Bias Voltage 




5 1J 5 10 

REVERSE BIAS VOLTAGE IV) 




Process 21 



Switching Times vs 
Collector Current 



:V«-J.tv 
l c - II I, ,-11 1. , 




Switching Times vs 
Ambient Temperature 









M , 
























N 












U 












1, 






'c ' 
»ce 


• ■A. 

3.0V 


s, ' 3 


8 mA 


a, ■ 


.5 .I' 



Average Propagation Delay 
Per Trans 
Voltage 





































































: 


































AVERAGED OVER TEN STAGES 
SEE PROPAGATION DELAY CIRCUIT 











T» - AMBIENT TEMPERATURE (°C) 



V cc -SUmY VOLTAGE 00 



Storage Time vs Turn 
On and Turn Off Base 
Currents 



_ l c • 'On 

V - 1 


A 














V 




























































■u 


















- t. 














































■ 



















































































2.0 «0 6.1 1.0 II 
- TURN ON BASE CURRENT (mAt 



s Time vs Turn 
3n and Turn Off Base 
Currents 



1 

S J ' 

8 

3 

« -6.0 

i 

t -«.fl 

a 

■ 

§ -u 













! 


/ 1M 


nt 
3 




















- 4 


ft 












/ 












'/ 
















































































1 1 




















Ic-JOmA 
V CC =3.BV 



















I 2.0 4.0 60 BO II 12 
1.1 - TURN ON BASE CURRENT {mAI 



Storage Time vs Turn 
On and Turn Off Base 
Currents 




R 6 10 IB 20 25 30 
l B1 - TURN ON BASE CURRENT (mA) 



Fall Time vs Turn On and 
Turn Off Base Current 




Fall Time vs Turn On 

and Turn Off Base Currents 




I., - TURN ON 



• 2J «J U II IB 12 
l Bt - TURN ON BASE CURRENT (mA) 



Fall Time vs Turn On and 
Turn Off Base Currents 




l B , - TURN ON BASE CURRENT fmA) 



Delay Time vs Base Emitter 
Off Voltage and Turn On 
Base Current 




Rise Time vs Turn On 
Base Current and 
Collector Current 



5 




6-33 



v -@ — H 



Pulse Genersioi 

V, N Hnc Time < 1 in 

Source lmped»nw - S0i> 




■4V V ■ 



FIGURE 1. Charge Storage Time Measurement Circuit 



V, N Rin Tito < 1 m 



Duty Cyeto<2K 




V M - -3V 
V 1N .+15.I5V 



B.I 

22on i 

3.3 ten 

-vwf — L 



son 

10023 »iF> 



0.1 tiF 1.1 nf 



X 







\ 


— 




/ 


> 

«... 

V.B" 




UT 


- — — w 



To 
Inp 

R« Timtilm 



FIGURE 2. t on , t Q ff Measurement Circuit 



PULSE GENERATOR 
i, 0.5 ni 

z =son 



lp d = A«ti((> Propagaiion p« Tr.mrsior 




FIGURE 3. Circuit For 



of Propagation Delay 



6-34 



National 



4Ld Semiconductor 



Process 22 NPN Small Signal 



DESCRIPTION 




Process 22 is an overlay, double diffused, gold 
doped silicon epitaxial device. Complement to 
Process 64. 

APPLICATION 

This device was designed for high speed logic 
and core driver applications to 300 mA. 

PRINCIPAL DEVICE TYPES 



TO-52 
TO -92 



2N3013 
2N5772 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


t. 


l c = 10 mA, l B1 * l B2 = 10 mA 




12 


18 


ns 


Fig. 1 


*on 


l c = 300 mA, l B , = l B2 = 30 mA 




10 


18 


ns 


Fig. 2 


toff 


l c » 300 mA, l B1 = l B2 => 30 mA 




18 


30 


ns 








C b 


V CB = 5V 




3.2 


5.0 


pF 


TO- 18 


Cob 


V EB = 0.5V 




6.2 


8.0 


pF 


TO- 18 


hf. 


l c = 30 mA, V CE = 10V, f = 100 MHz 


3.5 


7.0 


10 






n FE 


V CE = 1V, 10 mA 


20 


50 


150 






n FE 


Vce 8 IV, l c =30 mA 


20 


50 


150 






h FE 


V C E " IV, l c » 100 mA 


20 


48 


150 






h FE 


Vce = 1V, l c - 300 mA 


15 


30 


120 






h FE 


V CE = 0.4V, l c = 30 mA 


20 


50 


150 






h FE 


V CE • 0.5V, l c = 100 mA 


20 


50 


150 






V CE(SAT) 


l c = 30 mA, l B = 3 mA 




0.14 


0.20 


V 




V CE(SAT) 


l c » 100 mA, l B = 10 mA 




0.20 


0.28 


V 




V CE(SAT) 


l c = 300 mA, l B - 30 mA 
l c = 30 mA, l 8 = 3 mA 




0.40 


0.50 


V 




V BE(SAT) 




0.80 


0.95 


V" 




V 8E(SAT) 


p c = 100 mA, l B = 10 mA 




0.92 


1.2 


V 




V BE(SAT) 


l c * 300 mA, l B = 30 mA 




1.1 


1.7 


V 




BV CBO 


l c = 100 MA 


40 


50 




V 




BVceo 


l c = 10 mA 


15 


18 




V 




BV EBO 


l E - 100 /JA 


5.0 


5.7 




V 




'CBO 


V CB = 20V 






50 


nA 




'ebo 


V EB = 3V 

' 1 




50 


nA 





6-35 



Process 22 



DC Pulse Current Gain 
vs Collector Current 



1 M 

a 



6b C 
25 C 




Base-Emitter On Voltage 
vs Collector Current 




Base Saturation Voltage 
vs Collector Current 




l c - COLLECTOR CURRENT (mAl 



l c - COLLECTOR CURRENT ImAI 



10 20 SO 100 200 ! 

I e COLLECTOR CURRENT ImA) 



Collector Saturation 
Voltage vs Collector 
Current 




10 20 50 100 200 5 

l c - COLLECTOR CURRENT (inA) 



Collector Reverse Current 
vs Reverse Bias Voltage 



5 « 




10 20 30 40 

Vet - COLLECTOR EMITTER VOLTAGE IV) 



Collector Reverse Current 
vs Ambient Temperature 



C 01 
S 0.05 



111 

V ce ■ 20V | 



















































































































































T fl - AMBIENT TEMPERATURE I C] 



Input and Output 
Capacitance vs Reverse 
Bias Voltage 




Contours of Constant 
Gain Bandwidth 
Product (f-|-> 




Switching Times vs 
Collector Current 




REVERSE BIAS VOLTAGE (VI 



l c - COLLECTOR CURRENT 1mA> 



20 SO 1 00 200 

l c COLLECTOR CURRENT ImA. 



6-36 




Fall Time vs Turn On and Fall Time vs Turn On and Fall Time vs Turn On and 

Turn Off Base Currents Turn Off Base Currents Turn Off Base Currents 




Z.D 4 6.0 SO 10 B Q 10 IS 20 2b o 20 40 GO 80 100 

l B , - TURN ON BASE CURRENT (mAI l B , - TURN ON BASE CURRENT (mA) l B1 - TURN ON BASE CURRENT (mAI 



Delay Time vs Base Rise Time vs Collector 

Emitter Off Voltage and and Turn On Base 

Turn On Base Current Currents 




6 37 




O V„ ■ -3.BV 



x: 



_n_ 

Puhe Width >mm 

Z, N • W. 



sr 



1 KII 3 (if S 33H 05 jjF 



T 



■ 



1 



-O To fcmpi.ns Stop* 
RiwTimtO.DM 
Input Z^IWKfl 



FIGURE 1. t on , t off Test Circuit 



Pulu Gm«ntoi 
W, N Bi»Twte<t« 
S«™ Im^te*. ■ son 



soon 



-i( — © 



' 50QS? 



FIGURE 2. Charge Storage Time Measurement Circuit 



6-38 




National 
Semiconductor 




Process 23 NPN Small Signal 



DESCRIPTION 

Process 23 is an overlay, double diffused gold 
doped silicon epitaxial device. Complement to 
Process 66. 

APPLICATION 

This device is designed as general purpose amplifier 
and switch. The useful dynamic range extends to 
100 mA as a switch and to 100 MHz as an 
amplifier. 

PRINCIPAL DEVICE TYPES 



o 
o 

CD 
IN) 

w 



TO-18 
TO92 



NS3904 
2 N 3904 



PARAMETER 



TEST CONDITIONS 



MIN 



TYP 



MAX 



UNITS 



NOTES 



toff 
C b 
Cib 
NF 

hfe 

h FE 
hr-E 
h FE 
h FE 
h FE 

V CE(SAT) 

V BE(SAT) 

V CE(SAT) 

VbE(SAT) 

BVcBO 

BVcEO 

BV EB0 

'CBO 

'ebo 



l c = 10 mA, I B i = 1 mA 

l c = 10 mA, l B2 = 1 mA 

V CB = 5V,f = 1 MHz 

V EB = 0.5V, f = 1 MHz 

V CE = 5V, l c = 100 mA, R s M 1 kS2, 
P BW = 15.7 kHz 

l c = 10 mA, V CE = 20V, f = 100 MHz 

l c = 100 mA, V ce = 5V 

l c = 1 mA, V CE = 5V 

l c = 10 mA, V CE = 5V 

l c = 50 mA, V C e ■ 5V 

l c = 100 mA, V CE = 5V 

l c = 10 mA, l B = 1 mA 

l c = 10 mA, l B = 1 mA 

l c = 50 mA, l B = 5 mA 

l c = 50 mA, l B = 5 mA 

l c = 10uA 

l c = 1 mA 

l c = 10mA 

V CB = 25V 

V EB = 4V 



2.0 
40 
70 
50 
30 
20 



60 
30 
6.0 



30 
150 

2.7 
5.5 

2.0 

5.0 
100 
150 
150 
120 
50 
0.07 
0.70 
0.10 
0.75 
90 
40 



70 
250 
4.0 

8.0 

5.0 

7.0 

300 

300 

350 

200 

100 
0.10 
0.80 
0.15 
0.85 

120 
50 
8.0 
50 
50 



ns 
ns 
pF 
pF 



dB 



V 

V 

V 

V 

V 

V 

V 
nA 
nA 



Fig. 1 
Fig. 2 
TO-18 
TO-18 



639 



Pulsed DC Current Gain Base-Emitter On Voltage 



vs Collector Current 



vs Collector Current 



Process 23 

Maximum Power 
Dissipation vs 
Ambient Temperature 



£ 120 
x 

8 

I » 

K 

£ *0 





■ 


s.ov- 




























































- 












































1 




































































Maximum Power 
Dissipation vs 
Case Temperature 




Noise Figure vs 
Frequency 




l c - COLLECTOR CURRENT Ml 



VCEISATI « IC 




VBE(SAT) « <C 




lc - COLLECTOR CURRENT jmA) 



Collector Cutoff Current 




Noise Figure vs 
Source Resistance 



1 



■■ll ■r.Niinrjviiifi 

maacj/um m'Mw 


-ft 






in / 1 iiiii 




w 
















ftftbr 












W- 


-ft 












00 u A 1 1 




























it 














































III! f - i-o 





|5 jo 

»S .is 

ii " 















11- 




















— 


















- 




C 











































































































































1 10 1 

lc - COLLECTOR CURRENT CrnAI 



Current Gain and Phase 
Angle vs Frequency 




Contours of Constant Gain 
Bandwidth Product (fr) 




6-40 



Current Gain 



n r/*n«ivic i cno \ v^e — iu v d q, i - i .u ivnz., i ^ - 
Output Admittance Input Impedance 



Voltage Feedback Ratio 





l c -COLLECTOR CURRENT (mA) 



Charge Data 



l c - COLLECTOR CURRENT (mfii 



l c - COLLECTOR CURRENT (mA) 



l c - COLLECTOR CURRENT (mA) 



Turn On Time 



Rise Time 




l c - COLLECTOR CURRENT (mA) 





- COLLECTOR CURRENT (mA) 



l c - COLLECTOR CURRENT (mA) 



Storage Time 



Fall Time 




£ too 

i 















■1- 


b; 
40V 
10 
























~1 










1 5°C 




c> 




















































































Tj ■ 


25° 


E 







l c - COLLECTOR CURRENT (n>A) 



l c - COLLECTOR CURREKTlmAI 



TRANSIENT CHARACTERISTICS (-Tj = 25°C - Ti = 125°C) 



FIGURE 1 




10<t 1 <BO0fu 
DUTY CYCLE -Jx 





FIGURE 2. Storage and Fall Time Equivalent Test Circuit 



6-41 



_^ , 




PARAMETER 


TEST CONDITIONS 


MIN 


TVP 


MAX 


UNITS 


NOTES 


'on 


l c = 500 mA, l B1 =50 mA 




12 


35 


ns 


Fig. 1 


'off 


l c = 500 mA, I B2 =50 mA 




50 


60 


ns 


Fig. 1 




l c > 50 mA, V CE = 10V, f = 100 MHz 


2.5 


4.25 








Ccb 


V CB = 10V 




5.5 


10 


pF 




Ceb 


V EB = 0.5V 




45 


55 


pF 




h fe 


l c = 10 mA, V C g = 1V 


40 


60 


120 






h fe 


l c = 100 mA, V CE = IV 


45 


90 


150 






hfe 


l c = 300 mA, V CE = 1V 


35 


66 


120 






hfe 


l c = 500 mA. V CE = IV 


25 


50 


100 






hfe 


l c « 800 mA, V CE = IV 


20 


28 


40 






hfe 


l c = TA, V CE = IV 


15 


25 


35 






hfe 


l c s 800 mA, V CE p 2V 


25 


38 


60 






hfe 


l c = 1A. V CE = 5V 


25 


40 


60 






VCEISATI 


l c = 10 mA, l B = 1 mA 




0.155 


0.20 


V 




VcEISATI 


l c = 100 mA, l B = 10 mA 




0.155 


0.20 


V 




V CE(SATI 


l c = 300 mA, l B = 30 mA 




0.240 


0.40 


V 




V CE(SAT) 


l c = 500 mA, l B = 50 mA 




0.350 


0.50 


V 




V CE(SAT> 


l c - 800 mA, 80 mA 




0.50 


0.80 


V 




V CE(SATI 


l c ■ 1A, ! B = 100 mA 




0.70 


1.20 


V 




V BEISATI 


l c * 10 mA, l B = 1 mA 




0.66 


0.70 


V 








0.77 








V BE(SAT) 


l c = 100 mA, l B = 10 mA 




0.85 


V 




VBEISATI 


l c = 300 mA, l B = 30 mA 




0.88 


1.20 


V 




V BEISATI 


l c = 500 mA, B = 50 mA 




0.95 


1.20 






V BE(SATI 


l c ' 800 mA, l B = 80 mA 




1.10 


1.50 


V 




V BE(SATI 


l c " 1A, l B = 100 mA 




1.18 


1.70 


V 




BVcEO 


l c = 1 mA 


40 


45 


50 


V 




BVcbo 


l c - 100f/A 


80 


100 


130 


V 




bv eb0 


l c ■ 10,uA 


6.0 






V 




'CBO 


V CB " 40V 






1.0 


MA 




'ebO 


V EB ■ 4V 






1.0 

1 


PA 

















6-42 



Process 25 



DC Pulse Current Gain 
vs Collector Current 




i.i 10 in ii 

lc- COLLECTOR CURRENT!-* 



Base-Emitter On Voltage 
vs Collector Current 



2 u 

< 

I u 

° 0.6 

i 

£ D.4 

| 

j . 















Vc.-SV 


























= 26 C 

































































































0.1 1.0 10 

l c - COLLECTOR CURRENT (mA) 



Base Saturation Voltage 
vs Collector Current 




Collector Saturation 
Voltage vs Collector 
Current 




JS 1.1 10 100 IHO 



lc -■COLLECTOR CURRENT ImAI 



Collector Cutoff Current 
vs Ambient Temperature 




= 0.1 



J 0.01 ' — ' — I — ' — I — ' — ' — I — I — I — 

25 50 75 100 125 
T, - AMBIENT TEMPERATURE (°C) 



Collector Cutoff Current 
vs Reverse Bias Voltage 




20 40 60 80 

V ce - COLLECTOR-BASE VOLTAGE (V| 



Input and Output 
Capacitance vs 
Reverse Bias 




Contours of Constant 
Bandwidth Product (f T l 




Turn On and Turn Off 
Times vs Collector Current 



1 «o 
I 











1 lui'iBi-ic/io 


























-14 






















































































































1 


it 



REVERSE BIAS VOLTAGE IV) 



lc - COLLECTOR CURRENT ImA) 



l c - COLLECTOR CURRENT (mA) 



Maximum Power 
Dissipation vs 
Ambient Temperature 




T* - AMBIENT TEMPERATURE (°Ct 

*One square inch of copper run 



Maximum Power 
Dissipation vs 
Case Temperature 




T c - CASE TEMPERATURE CCJ 



Switching Times vs 
Ambient Temperature 




T A - AMBIENT TEMPERATURE <°C) 



6-43 



Process 25 



Delay Time vs Turn On 

Switching Times vs Base Current and Reverse Rise Time vs Collector and 

Collector Current Base Emitter Voltage Turn On Base Currents 




Storage Time vs Turn 
On and Turn Off 
Base Currents 




Storage Time vs Turn 
On and Turn Off Base 
Currents 




Storage Time vs Turn 
On and Turn Off Base 
Currents 



1, 








7 






/ 




/ 










35 m 












/ 


45 in 














V cc = 30V 



Fall Time vs Turn On and 
Turn Off Base Currents 




10 20 30 40 
l B1 -TURN0N BASE CURRENT ImA] 



Fall Time vs Turn On and 
Turn Off Base Currents 




50 100 150 2D 

'bi - TURN -ON BASE CURRENT ImA) 



Fall Time vs Turn On and 
Turn Off Base Currents 




SWITCHING TIME TEST CIRCUIT 



-UV »MV 




6-44 



yw\ National 

SLA Semiconductor 



Process 27 NPN Small Signal 



DESCRIPTION 




Process 27 is a nonoverlay, double diffused, 
silicon epitaxial device. Complement to Process 69. 

APPLICATION 

This device is designed for general purpose am- 
plifier and switch applications, useful from audio 
to RF frequencies. 

PRINCIPAL DEVICE TYPES 

TO-18 2N915 

TO-92 MPSA20 (EBC) 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


NF (wide band) 


V C e =5, l c = 100 mA, f BW = 15.7 kHz 




1.5 




dB 




NF (spot) 


V CE = 5V, l c = 100 uA,f = 1kHz 
R s = 1k 




1.5 


3.0 


dB 




C C b 


V CB = 10V, f = 1 MHz 




2.0 


2.5 


pF 


TO-18 




V C B = 10V, f = 1 MHz 




2.5 


3.0 


pF 


TO-18 


c lb 


V EB = 0.50V, f = 1 MHz 




5.5 


7.0 


pF 


TO-18 


H 


V CE = 10V, l c = 10 mA 


100 


500 




MHz 




ton 


V CE = 10V, l c = 10 mA, l B1 = 1 mA 


30 


40 


50 


ns 




toff 


V CE - 10V, l c = 10 mA, l B2 = 1 mA 


400 


600 


700 


ns 




h FE 


V CE = 10V, l c = 100 uA 


40 


115 


340 






h FE 


V CE = 10V, l c = 1 mA 


50 


150 


450 






h FE 


V CE = 10V, l c = 10 mA 


62 


185 


560 






h FE 


V CE = 10V, l c = 50 mA 


45 


130 


400 






VcEBAT) 


l c = 10 mA, l B = 1 mA 




0.055 


0.10 


V 




Vbeisati 


lc = 10 mA, I B = 1 mA 




0.770 


1.0 


V 




BV CB0 


l c = 100 mA 


50 


70 




V 




BVcEO 


IC - 10 mA 


30 


45 


60 


V 






bv eb0 


l E = 10 mA 


5.0 


6.5 




V 




ICBO 


V CB = 40 






50 


nA 




Iebo 


V EB =4.0 






50 


nA 





6-45 




Base Saturation Voltage t on And t Q ff vs Collector Switching Times vs Noise Figure vs 

vs Collector Current Current Collector Current Frequency 




Lc - COLLECTOR CURRENT imA! I,. -COLLECTOR CURRENT <«A> lc - COLLECTOR CURRENT ImA) * - FREQUENCY (Hi) 



6-46 




Input Admittance vs 
Collector Current 




COMMON EMITTER Y PARAMETERS 



Output Admittance vs 
Collector Current 



V CE =5.DV 
. f = 10.7 MHi 







































































K. 





















Forward Transfer 
Admittance vs 
Collector Current 















= 5.0V 














0.7 






























































< 


r 














<* 





































Reverse Transfer 
Admittance vs 
Collector Current 



03 



V CE = 5.0V 
.1 = 10.7 MHz 



l c - COLLECTOR CURRENT fmA) 



l c - COLLECTOR CURRENT ImAI 



l c -COLLECTOR CURRENT ImAI 



l c - COLLECTOR CURRENT (mA) 



COMMON EMITTER H PARAMETERS 



Small Signal Input 
Resistance vs Collector 
Current 



Small Signal Output 
Conductance vs 
Collector Current 




lc - COLLECTOR CURRENT (tnA) 



1.0 10 20 

l c - COLLECTOR CURRENT (mA) 



Small Signal Current Gain 
vs Collector Current 



Small Signal Voltage 
Feedback Ratio vs 
Collector Current 




v ce MOV 
f = 1.0 kHi 



l c - COLLECTOR CURRENT (mA) 



1.0 10 20 

lc - COLLECTOR CURRENT (mA> 



6-47 




National 
Semiconductor 




Process 29 NPN HF Amp 



DESCRIPTION 

Process 29 is an overlay double diffused, silicon 
epitaxial device. 

APPLICATION 



This device was designed for use in high frequency 
receiver front end designs requiring good NF from 
low driving R s . 

PRINCIPAL DEVICE TYPES 

TO-92-MPS 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


IC = 1 rnA 




80 






V 


BV C BO 


ic - 100 mA 




80 






• aii >v 


bvebo 


l£ = 100 uA 




4.0 






V 


'CBO 


V C B = 60V 








50 


nA 


lEBO 


V£B = 3.0V 








50 


nA 


HFE 


V C E= 10V, l C = 1.5 mA 




30 


70 


150 




VCE(SAT) 


Iq = 10 mA, Ib = 1 mA 






0.12 


0.25 


V 


ft 


VCE= 10V, l C = 1.5 mA f = 


100 MHz ■ 


80 


180 




MHz 


Ccb 


V C B = 10V 






1.0 


1.6 


PF 


h oe 


l C = 1.5 mA, V C E = 10V, f = 


1.0 kHz 




2.0 


5.0 


,umho 


NF 


IC= 1.5 mA, VcE= 10V, R s 


= 50J2, f = 1.0 MHz 




1.7 


2.0 


dB 




Current Gain 
Bandwidth Product 




1.0 3.0 SO 7.0 10 

l c - COLLECTOR CURRENT (mA oc ) 



Collector-Base Capacitance 
vs Voltage 



% s.o 
| 



S i.o 
m 

8 



i 1 mi 

. f - t n mu. Mil 


1 1 1 





































































































































































































1.0 2.0 5.0 10 20 50 100 
V CB - COLLECTOR-BASE VOLTAGE {VI 




11.270) 0.010 

10.254)" 




DESCRIPTION 

Process 35 is a double diffused silicon epitaxial 
device. 

APPLICATION 

This device is designed for use in the output stage 
of 4W AM Citizens Band (27 MHz) transmitters 
with capabilities to withstand infinite VSWR at 
rated output. 

PRINCIPAL DEVICE TYPES 



U 008 

(0.203) 



TO-39 

TO-126 

TO-220 



MRF8004 

MRF472 

2SC1678 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Pout 


f = 27 MHz, l c (Avg) = 415 mA, (Figure 1) 


3.0 


3.5 




w 


n 


V CC = 12V, P, N =0.4W 


60 


70 




% 


hfe 


l c = 100 mA, V CE = 5V, f = 20 MHz 


6.0 


12 






c ob 


V CB = 10V 




25 


35 


pF 


H FE 


l c = 100 mA, V CE = 1V 


30 


70 


150 




V C ES 


l c = 1.0A, l B = 100 mA 




0.2 


0.5 


V 


BV CER 


( e * 1 mA, R BE = 10^ 


65 






V 


BV EBO 


l E = 100 jiA 


3 






V 


'cBO 


V CB = 40V 






10 


MA 


'ceo 


V CE - 40V 






100 


MA 


'ebo 


V EB = 2.0V 






10 


MA 


SOA 


V CE = 30V, t = 1 sec 


500 






mA 



Safe Operating Area Curve 



Safe Operating Area Curve 





1 3 5 10 30 50 100 

V CE - COLLECTOR-EMITTER VOLTAGE (V) 



1 5 10 50 100 1k 

V CE - COLLECTOR EMITTER VOLTAGE (V) 



6-50 





CI, C2 = 9.0-180 pF ARC0 463 
C3,C4 = 5.0-80 pF AFIC0 462 
C5 = 0.0VFDisc 
C6 = O.lfF Disc 

RFC 1 4 turns No. 32 enameled wire wound on Indiana General Bead No. 57 1692 
RFC 2 15 ,-;H choke. J.W. Millet -4624 
LI - 0.22 molded choke 
LI - molded choke 



FIGURE I. 27 MHz Test Circuit 



6-51 



s 



National Process 36 NPN High Voltage Power 

Semiconductor 




DESCRIPTION 

Process 36 a non-overlay double-diffused silicon epitaxial 
device. 

APPLICATION 

This device is designed for use in horizontal driver, 
class A off-line amplifier and off-line switching applica- 
tions. 

PRINCIPAL DEVICE TYPES 

2N5655 MJE340 MJE343 
2IM5656 MJE341 MJE344 
2N5657 MJE342 



PARAMETER 


CONDITIONS 


M1N 


TYP 


MAX 


UNITS 


t> v CEO 


ICE i i"n 


200 


300 






BVCBO 


ICB = 100 A 


225 


325 




V 


BVEBO 


lEB ■ 10/M 


6 






V 


'CEO 


Vqe " 200V 






50 


MA 


ICBO 


V C B = 225V 






1 


pA 


lEBO 


V EB = 5V 

l C = 50 mA, V C E = 10V* 


25 


190 


1 


HA 


HFE 


l C » 100 mA, V C E = 10V* 
IC= 250 mA, Vce= 10V* 
IC = 500 mA, V CE = 10V* 


30 
15 
10 


200 

60 

25 


300 




VCE(SAT) 


l C = 100 mA, l B = 10 mA* 




0.08 


0.5 


V 


VCE(SAT) 


l C = 500 mA, l B = 100 mA* 




0.175 


0.5 


V 


VBE(SAT) 


l C = 500 mA, l B = 100 mA* 




0.9 


1.2 


V 


v BE(ON) 


l C = 100 mA, V C E = 10V* 




0.7 


1.0 


V 


ft 


l C • 50 mA, V CE = 10V, f = 20 MHz 


10 


60 




MHz 


Cob 


V CB • 10V 






15 


pF 


Cib 


V B E = 0.5V 






125 


PF 


I SB 


Vqe = 100V, T = 1 second 


200 






mA 


PD(MAX) 


TO-126 
TO-202 






25 
15 


W 
W 


Ojc 


TO-126 
TO-202 






5.0 
8.33 


°c/w 
°c/w 


0]fK 


TO 202 






69.4 


°c/w 



Pulse test, pulse width = 300 lis 



6-52 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




1 10 10D 

l c - COLLECTOR CURRENT (mAl 



Collector-Emitter Saturation 
Voltage vs Collector Current 




10 100 Ik 

l c - COLLECTOR CURRENT (mA) 



Process 36 



Base-Emitter Saturation 
Voltage vs Collector Current 



p 0.2 



T c «-40 C 



T c = 25 C 




. T C = 125 C 



1 10 100 

l c - COLLECTOR CURRENT (mA) 



Base-Emitter ON Voltage vs 
Collector Current 



1 0.4 







II 














-Tc 




40 


C 


























T ( 
















25 C 
































h 




25 C 








































Vrr 




ov 
















II 1 III 



1 10 100 Ih 

lp - COLLECTOR CURRENT (mA) 



Contours of Constant Gain 
Bandwidth Product (f t } 




ID 100 
l C - COLLECTOR CURRENT (mA) 



Collector-Base and Emitter- 
Base Capacitance vs Reverse 
Bias Voltage 




0.1 1 10 100 

REVERSE BIAS VOLTAGE (V) 



Typical Switching Time vs 
Collector Current 





1k 




3600 




3200 




2800 


i 


Z400 




2k 




1600 




1200 




800 




400 




1 



| | | | || 


11 


1 I.I! 

— Iir= 10 





























































































































- 




























































>0N 
— H 



10 100 Ik 

l c - COLLECTOR CURRENT (mAl 



Safe Operating Area 
TO-126 











100 ms: 




































I 




























] r 


11 




DEI 


ER 


LI 

HI 


MIT 

Mil 






= 1 


- GVBVrcn 



















































































































































10 100 350 Ik 

V CE - COLLECTOR VOLTAGE IV) 



Safe Operating Area 
TO 202 







— 
















10 ms 










i 




















































Maximum Power Dissipation 
vs Case Temperature 



5 30 



































































































r TD-126 

Xl i i 


C 

h 


VI 




























f- 










































































































































TC 


2 


12 


8 1 


3 


c/v 




















1 - 


























1 













V CE - COLLECTOR VOLTAGE (V) 



5 SO 100 150 

Tr; — CASE TEMPERATURE ( 



6-53 



U 
O 




DESCRIPTION 

Process 37 is a double diffused silicon epitaxial 
planar device. Complement to Process 77. 

APPLICATION 

This device was designed for general purpose 
medium power amplifiers and switching circuits 
that require collector currents to 1A. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVceo 


l c = 10 mA 


25 




45 


V 


BV C bo 


l c = 100/iA 


50 






V 


BV EBO 


l E - 100nA 


5 


7 




V 


'cBO 


Vcb = BV CEO 




50 


500 


nA 


1 


V E8 • 5V 




0.1 


100 


fA 


h F E 


l c = 500 mA, V CE - 1V 


100 




400 




VcE(SAT) 


l c = 1A, l B - 0.1A 




0.2 


0.5 


V 


Vbeisati 


l c = 1A, l B . Q 1A 




0.95 


1.5 


V 


f T 


l c - 100 mA, V CE - 10V 




300 




MHz 


CoBO 


V CB = 10V 






20 


pF 



PRINCIPAL DEVICE TYPES 



TO-202 (Package 35) 

NSD102 
NSD103 
NSDU01 
NSDU01 A 

TO-202 (Package 36) 

D42C1 
D42C2 
D42C3 
D42C4 
D42C5 
D42C6 
NSE180 

92 PLUS (Package 90) 

92PE37A 
BD373A 



92 PLUS (Package 91) 

92PU01 
92PU01A 

TO-126 (Package 38) 
BD135 



Power Dissipation 

vsCase Temperature TO-126 



Maximum Power Dissipation 
vs Ambient Temperature 




25 SO 7S 1U !2S ISO 
Tc - CASE TEMPERATURE I CI 




T 4 - AMBIENT TEMPERATURE ( CI 

*One square inch of copper run 




Base -Emitter 
Saturation Voltage 
vs Collector Current 




Collector-Emitter 
Voltage vs Collector 
Current 



Gain Bandwidth 
Product vs Collector 
Current 




l c - COLLECTOR CURRENT (mA) 



l c - COLLECTOR CURRENT (mA) 



t ID 100 

lc - COLLECTOR CURRENT (mA) 





National 
Semiconductor 



Process 38 NPN Medium Power 




/ / / / 



/ / / ; .■> r T 3 . 



0.031 
10.7171 



DESCRIPTION 

Process 38 is a double diffused silicon epitaxial 
planar device. Complement to Process 78. 

APPLICATION 

This device was designed for general purpose 
medium power amplifier and switching circuits 
that require collector currents to 1 A. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BV CEO 


l c = 10 mA 


45 




80 


V 


BVcbo 


l c = 100/jA 


90 




160 


V 






BV EBO 


l E = 100/iA 


5 


7 




V 


'cBO 


V CB = BV CEO 




50 


500 


nA 


'ebo 


V EB = 5V 




0.1 


100 


MA 


h FE 


l c = 100 mA. V CE = 1V 


150 




500 




V CE(SAT) 


l c = 500 mA, l B = 50 mA 




0.2 


0.5 


V 










V BE(SAT) 


l c = 500 mA, l B = 50 mA 




0.8 


1.4 


V 


f T 


l c = 100 mA, V CE = 10V 




250 




MHz 


C OBO 


V CB = 10V 






15 


pF 



PRINCIPAL DEVICE TYPES 

TO-202 (Package 35) 92 PLUS (Package 91 ) 

NSDU05 92PU05 
NSD6178 BD371B 
NSD6179 BD371C 

TO-202 (Package 36) TO-126 (Package 38) 

D42C7 BD137 

D42C8 

D42C9 

NSE181 

92 PLUS (Package 90) 

92PE37B 
BD373B 
BD373C 



Power Dissipation 

vs Case Temperature TO-126 



Maximum Power Dissipation 
vs Ambient Temperature 




25 50 75 100 125 150 
U - CASE TEMPERATURE CO 




1 A - AMBIENT TEMPERATURE I 

*One square inch of copper run 



o-oo 



Process 38 



Typical Normalized Pulsed Typical Normalized Pulsed Base-Emitter "ON" 

Current Gain vs Collector Current Gain vs Collector Voltage vs Collector 

Current Current Current 






DESCRIPTION 

Process 39 is a double diffused silicon epitaxial 
planar device. Complement to Process 79. 

APPLICATION 

This device was designed for general purpose 
medium power amplifier and switching circuits 
that require collector currents to 1 A. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVceo 


l c = 10 mA 


80 






110 


V 


BV CB o 


l c = 100fjA 


160 






220 


V 


BV EBO 


i E = ^oo^A 


5 


7 






V 


'cBO 


V CB = BV CEO 




50 




500 


nA 


'ebo 


V EB = 5V 




0.1 




100 


MA 


h FE 


l c = 100 mA, V CE = 1 V 


100 






350 




V CE(SAT) 


l c = 500 mA, l B = 50 mA 




0.2 




0.5 


V 


V BE (SAT) 


l c = 500 mA, l B = 50 mA 




0.95 




1.5 


V 


*T 


l c = 100 mA, V CE = 10V 




120 






MHz 


Co BO 


V C8 = 10V 








12 





PRINCIPAL DEVICE 

TO-202 (Package 35) 

NSD104 
NSD105 
NSD106 
NSDU06 
NSDU07 

92 PLUS (Package 90) 

92PE37C 
BD373D 

92 PLUS (Package 91) 

92PU06 
92PU07 
BD371D 

TO-126 (Package 38) 

BD139 




6-58 



Process 39 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




Base-Emitter "ON" 
Voltage vs Collector 
Current 




l c - COLLECTOR CURRENT (mA) 



l c - COLLECTOR CURRENT <mAI 



l c - COLLECTOR CURRENT (mA) 



Base- Emitter 
Saturation Voltage 
vs Collector Current 




Collector-Emitter 
Saturation Voltage 
vs Collector Current 



= ~ 0.6 



1 II 

- 'c 

- = 1 






















Si 




































fr~" 














T c ""'-'« cj 1 || 




II 




T t - 25 C 






L 


1+ 


mm 
mat? 



Gain Bandwidth 
Product vs Collector 
Current 




l c - COLLECTOR CURRENT (mA) 



l c - COLLECTOR CURRENT (mA) 



Collector-Base Capaci- 
tance vs Collector-Base 
Voltage 




Safe Operating Area 
TO-202 




Maximum Power Dissipation 
vs Ambient Temperature 
(TO-202 > 




Vcs - COLLECTOR-BASE VOLTAGE (V) 



V cc - COLLECTOR EMITTER VOLTAGE (Vj 



H M IS 100 1ZS ISO 
T x - AMBIENT TEMPERATURE CO 



6-59 



yr\ National 

SlA Semiconductor 




Ptocgss 41 
NPN AGC-UHF, Amp Mixer 



DESCRIPTION 

Process 41 is an overlay double diffused, silicon 
device. 

APPLICATION 

This device was designed for use in extremely 
low noise UHF/VHF preamplifiers operated 
common-emitter or common base, and in UHF 
mixers. Exhibits forward AGC characteristics 
between 3-10 mA. 



UHF (TO-72 and Micro Disc Only) VHF (TO-92 Only) 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


N F 


f = 800 MHz, V CB = 10V, l c = 2 mA, 
Common Base, IY S I = Optimum 




5.5 




dB 


TO-72 


NF 


f = 800 MHz, V CB = 10V, l c = 2 mA, 




7.0 


9.5 


dB 


TO-72 




Common Base, 1Y S I = 10 ± i0 mmhos 












Pg 


f = 800 MHz, V CB = 10V, l c = 2 mA, 
Common Base, R L = 500S2 


7.5 : 


9.0 




dB 


TO-72 


NF 


f \ 450 MHz, V CE = 10V, l c = 2 mA, 
Common-Emitter, R s = 75J2 




2.0 




dB 


TO-72 


NF 


f =200 MHz, V CB = 10V, l c =3mA, 
Common Base, Ft s = 100f2 




2.5 


3.0 


dB 


Fig. 1 


Pg 


f = 200 MHz, V CB = 10V, l c = 3 mA, 
Common Base, R L = 1 kH 


13 


16 




dB 


Fig. 1 


rb'Cc 


f = 79.8 MHz, V CB = 10V, l c = 3 mA, 




2.5 


5.0 


ps 


TO-72 


hfe 


f = 100 MHz, V CE = 10V, l c = 2 mA 


6.0 


7.5 










f= 1.0 MHz, V CB = 10V, l E =0 




0.28 


0.35 


pF 


TO-72 


c„ 


f = 1.0 MHz, V CE = 10V, l B = 




0.12 
0.19 


0.20 
0.30 


pF 
pF 


TO-72 
TO-92 


h FE 


V CE = 10V, l c = 2 mA 


30 


75 


200 






BV CEO 


l c = 1 mA 


30 






V 




BV CBO 


l c = io^a 


30 






V 




BV EBO 




3.0 


4.0 




V 




'CBO 


V CB = 20V 






100 


nA 




Iebo 


V EB = 2.5V 






50 


nA 



















PRINCIPAL DEVICE TYPES 



TO-72 (Package 25) 

BF180 
BF181 
BF200 



TO-92 (Package 7B) 

MPSH08 
MPSH07 



6-60 



Process 41 



DC Pulse Current Gain 
vs Collector Current 



g 120 
R too 



0.01 1 1 

lc - COLLECTOR CURRENT (mA) 



Common Base Noise 
Figure vs Frequency @ 
Optimum Source IY5I 



l 11 1 — 1 — r-r 

I OPTIMUM iY s 
MHi IN mmho 



200 10.5 -j4 



4 



12 5 10 20 50 100200 500 1000 
f- FREQUENCY (MHz) 



Normalized Common 
Base Gain vs Emitter 
Current vs Operating 
Frequency 



Contours of Constant 
Gain Bandwidth 
Product (f-j-) 




COLLECTOR CUHRENT (mA) 



COMMON BASE Y PARAMETERS VS FREQUENCY 



Input Admittance 
vs Frequency 



Reverse Transfer 
Admittance vs Frequency 



Forward Transfer 
Admittance vs Frequency 



Output Admittance 
vs Frequency 




10 20 50 100 200 600 1000 
1 - FREQUENCY IMHj] 



10 20 50 100 200 500 1000 
1 - FREQUENCY (MHr) 



10 20 50 100 200 500 1000 
f - FREQUENCY (MHz) 



10 20 50 100 200 500 1000 
( - FREQUENCY (MHz) 



CONTOURS OF CONSTANT NOISE FIGURES 



Common Base Noise 
Figure vs Source lYgl 




Common Base Noise 
Figure vs Source IYg I 




Common Base Noise 
Figure vs Source lYgl 



G s - SOURCE CONDUCTANCE (mmho) 



G s -SOURCE CONDUCTANCE (mmho) 




G s - SOURCE CONDUCTANCE 



Vcc = 10V O— Wr 



T 



1 00 

• (g\ I 



000 




LI -Ohmite Z-235 RF choke 
L2-6T No. 14wire,1"Lx1/4"IDts 
ccld side 

All capacitance in |)F, all 



FIGURE 1. Common Base 200 MHz PG and NF Circuit 



an overlay double diffused silicon 
)N 

as designed for use in low noise 
>lif iers with collector current in the 
i mA range in common emitter or 
mode of operation, and low fre- 
ight output UHF oscillators. 

DEVICE TYPES 

2N5179 

2SC535 (ECB), MPS-H10 (BEC) 



PAR AMFTFR 


tfst conditions 

6 I— O 1 V* \_/ 1 H \J III V_» IvO 


MIN 


TYP 


MAX 


UNITS 


NOTES 


PG 


f - 450 MHz, V CE = 10V, \q = 2 mA 


10 


13 




dB 


Fig. 1 


NF 


f ■ 450 MHz, V CE = 10V, l c = 2 mA 

R g = son 




3.0 


5.0 


dB 


Fig. 1 


Pout 


f = 500 MHz, V CB = 15V, l E = 8 mA 


30 


50 




mW 


TO-92 
Fig. 3 


pg 


f - 200 MHz, V CE = 10V, l c = 2 mA 


22 


27 




dB 


Fig. 2 


NF 


f = 200 MHz, V CE = 10V, l c = 2 mA 
R s = 1200 




2.0 


3.5 


dB 


Fig. 2 


h». 


f = 100 MHz, V CE - 10V, l c = 5 mA 


6.0 


10.5 


15 






rb'Cc 


f - 79.8 MHz, V CE - 10V, l c = 5 mA 




3.5 


10 


PS 


TO-72 


Ccb 


f = 1 .0 MHz, V CB = 10V, l E = 




0.4 


0.5 


PF 


TO-72 


^ce 


f = 1.0 MHz, V CE = 10V, l B =0 




0.2 


0.3 


pF 


TO-72 


C* 


f = 1.0 MHz, V EB = 0.5V, l c = 




0.8 


1.5 


PF 


TO-72 


h F E 


V CE - 10V, l c = 5 mA 


30 


90 


200 






h F E 


V CE = 6V, l c - 1 mA 


25 


75 








V CE(SAT) 


lc = 10 mA, l B = 5 mA 




0.07 


0.2 


V 




BV C EO 


l c - 1 mA 


20 


30 


40 


V 




BV CBO 


! c - 100 uA 


35 






V 




BV EBO 


l E = 10 nA 


4.0 






V 




ICBO 


V CB = 30V 






100 


nA 




Iebo 


V EB = 3V 






50 


nA 





6-62 




Process 42 





COMMON BASE Y PARAMETERS VS FREQUENCY 



Input Admittance vs 
Frequency 









1 

U,b 




Vce = 10V 
' l c = 5 mA 




























h,, 









200 500 1000 

I - FREQUENCY plHtl 



Reverse Transfer 
Admittance vs 
Frequency 




Forward Transfer 
Admittance vs 
Frequency 



o C 



































































































































































v CE = 


gv 










i c = 5 mA 



I0D 200 500 

f - FREQUENCY (MHi) 



Output Admittance vs 
Frequency 




Input Admittance vs 
Frequency 



COMMON EMITTER Y PARAMETERS VS FREQUENCY 



Forward Transfer 
Admittance vs 
Frequency 



Admittance vs 
Frequency 


















-o 
















































V 




T\ 






l c =2mA 

.Jill 




Process 42 



Output Admittance vs 
Frequency 



V CE = 10V 
l c =2mA 




























































































So. 















I - FREQUENCY IMHi] 



I - frequency (MHi) 



INPUT /Tv 

an 



r. 



x — 



?" 

1 



4 \ J 



CI. CI. C3. C7. CI - a 10 pf VARIAIl [ CAPACITOR 

C! - PLASTIC TUBULAR TRIMMER CAPACITOR IA0JUSTE0 ANO FIXEO FOR A TRANSISTOR 

HAVING A TYPICAL VALUE OF C,» (0.3b »F1| 
C4 - 100 if BUTTON TYPE FEE0THR0U6H CAPACITOR 
Ci - 1000 pf FEEQTHROUGH CAPACITOR 
CI - 470 >F LEADLESS CERAMIC DISC CAPACITOR 
LI. U - 1" lENQTH OF 1/*" DIAMETER COPPER BAR STOCK 

12 - l/I LOOP Bk 14 AWG ENAMELED WIRE PARALLEL TO AND APPROIIMATELY tff 

FROM tl 
III - i Ml POTENTIOMETER 

n-tm 



m 

i 


IK 

i- 

mm 


T1 






FIGURE I. 



Gain and Nona Fkjurs Circuit 



FIGURE 2. Nautralizad 200-MHz PF & NF Circuit 




h , ? JLfl — 



1. 1 TURNS NO. II AWS WIRE. 1/S INCH 00. 1 f M INCH LONG. 
I. I TURNS NO. a AWE WIRE. VII INCH 00, l/I INCH LOIN. 



FIGURE 3. 500 MHz Oscillator Circuit 




National 
Semiconductor 



Process 43 
NPN VHF/UHF Oscillator 




DESCRIPTION 

Process 43 is an overlay double diffused, silicon 
epitaxial device. 

APPLICATION 

This device was designed for use as RF amplifiers, 
oscillators and multipliers with collector current 
in the 1 mA to 2 mA range. 

PRINCIPAL DEVICE TYPES 

TO-72 2N918 
TO-92 PN3563, PN5130 (EBC), 

2N3663 (ECB) 



PARAMETER 



TEST CONDITIONS 



MIN 



TYP 



MAX 



UNITS 



NOTES 



G PE 
NF 

PO 
PO 
h f . 

rb'Cc 

C b 

c. b 

h FE 

VcEISATI 
V BE(SATI 
BVcEO 

BV CBO 



E BO 



CBO 



f = 200 MHz, l c = 5 mA, V CE i 10V 

f = 60 MHz, l c = 1 mA, V CE = 10V 
R s = 200U 

f = 500 MHz, l c = 8 mA, V CE = 15V 

f • 900 MHz, l c = 8 mA, V CE = 15V 

l c = 5 mA, V CE = 10V, f = 100 MHz 

f = 79.8 MHz, V CE = 10V, l E = 8 mA 

V CB = 10V, l E =0 

V EB = 0.5V, l c = 

l c = 1 mA, V CE = 1V 

l c = 5 mA, V CE = 10V 

l c = 10 mA, l B = 1 mA 

l c = 10 mA, l B = 1 mA 

l c = 3 mA 



100/aA 
10uA 
= 15V 
= 3V 



15 



20 
3.0 
6.0 



25 
40 



15 
30 
4.0 



18 

3.5 

35 
8.0 
9.0 

10 
1.2 
1.4 
5 

80 
0.25 

20 



5.0 



25 
1.7 
2.0 

200 
0.40 
0.95 
24 



50 
50 



dB 
dB 

mW 
mW 

ps 
pF 
pF 



V 
V 
V 
V 
V 
nA 
nA 



Neutralized 



Fig. 1 



TO-72 



6-65 





FIGURE 1. 500 MHz Oscillator Circuit 



COMMON EMITTER Y PARAMETERS VS FREQUENCY 



Process 43 



Input Admittance vs 
Collector Current-Output 

Short Circuit 




Admittance vs 
Current-Output 
Short Circuit 



f = 10.7 MHi 

v CI . ov 










































































































































































i 
























f 

































t 2 « I I 

Ic-COUICTtm CURRENT lm. 



Input Admittance vs 
Collector Current-Output 
Short Circuit 




Forward Transfer 
Admittance vs 
Current-Output 
Short Circuit 




Input Admittance vs 
Frequency -Out put 
Short Circuit 




tO 20 » 100 200 soo tm 



Forward Transfer 
Admittance vs 
Frequency -Output 
Open Circuit 




Admittance vs 
Collector Current-Input 
Short Circuit 















I- 10.7 UAH* 
















CI 


10 
































































































































k 





































l c - COLLECTOR CURRENT taA) 



Output Admittance vs 
Collector Current ! nput 
Short Circuit 




I » 

£ 



Admittance vs 
Collector Current-Input 
Short Circuit 



v« ■ iov 

1 I I 



• ! « I I II 

Ic - COLLECTOR CURRENT 1mA) 

Output Admittance vs 
Collector Current-Input 
Short Circuit 



I 5 

















■ 1M MHz 






























-« 


— E= 


v — 




























•a 


-10V 


















~r 


















»cr-S 


W 




























9 1 


C! 


in 



















2 4 I I II 

l c - COLLECTOR CURRENT (mA) 



Admittance vs 
Frequency-Input 
Short Circuit 



Cc-lOmA 












1 




10V 



































































































































































































I - FREQUENCY {Mb) 



Output Admittance v 
Frequency-Input 
Short Circuit 



K - 5 mA 
















10V 
















t 





































































































































SO 100 200 500 1W 



6-67 



National 



mm Semiconductor 



Process 44 NPN AGC-RF Amp 



DESCRIPTION 




Process 44 is an overlay double diffused, silicon 
device. 

APPLICATION 

This device was designed for use as a low noise 
VHF amplifier with forward AGC capability. 

PRINCIPAL DEVICE TYPES 



TO-72 
TO-92 



SE5020 

MPS6568, MPS-H30 (BEC) 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


NF 


f = 200 MHz, l c = 2 mA, V CE = 10V, 

r s = son 




2.0 


3.3 


dB 


Fig. 1 


Pg 


f = 200 MHz, l c = 2 mA, V CE = 10V, 

r s = son 


20 


24 




dB 


Fig. 1 


N F 


f = 45 MHz, l c =4 mA, V CE = 10V, 
R s = 50S2 




3.0 


5.0 


dB 


Fig. 2 


Pg 


f = 45 MHz, l c =4mA, V CE = 10V, 

R s = son 


23 


26 




dB 


Fig. 2 


AGC 


f = 200 MHz, V AGC at 30 dB Down 


4.0 


4.5 


5.0 


V 


Fig. 1 


AGC 




4.3 


5.0 


5.6 


V 




f = 45 MHz, V AGC at 30 dB Down 


Fig. 2 


C cb V 


V CB = 10V, l E =0 




0.35 


0.50 


pF 


TO-72 








0.45 


0.55 


pF 


TO-92 


n fe 


V CE = 10V, l c = 4 mA, f = 100 MHz 


3.75 


5.5 


8.0 






h FE 


l c =4 mA, V CE = 5V 


30 


70 


200 






VcE(SAT) 


l c = 10 mA, l B = 5 mA 




1.0 


2.0 


V 




V BE(SAT) 


l c = 10 mA, l B = 5 mA 




0.85 


0.95 


V 




BV CEO 


l c ■ 1 mA 


30 






V 




BV CBO 


l c = 100 uA 


30 






V 




BVebq 


l E = 10/iA 


4.0 






V 




'CBO 


V CB = 20V 






100 


nA 




!ebo 


V EB = 3V 






50 


nA 





■ 



6-68 



Pulsed DC Current Gain 
vs Collector Current 




Base-Emitter On Voltage 
vs Collector Current 




l c - COLLECTOR CURRENT ImA) 



1.0 10 100 

l c - COLLECTOR CURRENT ImA) 



Process 44 



Power Gain vs Frequency 



i 

■ 

i » 















jl 


CB ■ 15V 

l - 3.0 m A 














1 












MM 

NFIITflAI I7f n 










\ COMMON 


EMITTER 










































UN* 

COM 


EU1 
MO 


R 

1 E 


L 

M 


ZED 
ITER 




















1 

UNNEUT 


AL 


Z 


D 












COMMON BASE 



SO 100 I 
f- FREQUENCY (MHz) 



o 
o 
© 

CO 
CO 



Maximum Power 
Dissipation vs 
Ambient Temperature 



400 

1 JOD 



i 

«? 




Collector Cutoff Current 
vs Ambient Temperature 



- AMBIENT TEMPERATURE (XI 




Collector to Base 
Capacitance vs Collector 
to Base Voltage 



3 0.2 
S 



f * 1.0 MM* 
-TO-72 



V CB - COLLECTOR TO BASE VOLTAGE (V) 



Collector to Emitter 
Capacitance vs Collector 
to Emitter Voltage 




4.0 1.0 12 II It 

- COLLECTOR TO EMITTER VOLTAGE (V) 



Distribution of Collector 
to Emitter Capacitance 



Z 0-2" 

DC 

5 0.15 

S 0.11 

I 

J 































































T0-7Z 





































































































































































































2 2 10 30 50 70 90 91 9 

PERCENTILE DISTRIBUTION (W 



Distribution of Collector 
to Base Capacitance 




PERCENTILE DISTRIBUTION 1%) 



Contours of Constant Gain 
Bandwidth Product (fr) 




2 3.0 44 5.0 7.0 10 
l c - COLLECTOR CURRENT tmA) 



Noise Figure and Source 
Resistance vs Frequency 




Noise Figure vs Source 
Resistance and Collector 
Current 



| 

£ ion 

I - 













- V C6 - 15V 














= 60 


MHr 












1 


















2J 

— 2.50B 
3.0dB 
=3.6'dB 
= 4.0dB 


dB 


























_M 


d8 



















































LI 05 1J SJ 

l E - EMITTER CURRENT (mA) 



6-69 



COMMON EMITTER PERFORMANCE 



Power Gain and Noise 
Figure vs Automatic Gain 
Control Voltage 




1.0 U 3.0 4.0 5.0 6.0 
V» GC - AUTOMATIC GAIN CONTROL VOLTAGE (V) 



Power Gain and Noise 
Figure vs Collector 
Current 



14 




15 


1? 


■ 


I " 


10 

i i 


NOISE FIG 


5 S.0 
o 

i • 






£ -s o 


M 


1 


.? -10 


40 




-is 


20 




-» 




2.0 40 60 
l c - COLLECTOR CURRENT (mA) 



Maximum Available Gain 
vs Collector Current 



1 


■10 


MM 


30 




20 


< 
< 

S 


10 




1 


< 

o 


-w 


1 


-a 



















V c6 . 17V 


















1 i 20 


CM 













































































































































































































































2.0 4.0 CO SO 10 
l c - COLLECTOR CURRENT (mA) 



r Gain and Noise 
Figure vs Automatic 
Gain Control Voltage 




1.0 21 3.0 4.0 5.0 6.0 
- AUTOMATIC GAIN CONTROL VOLTAGE (VI 



Power Gain and Noise 
Figure vs Collector 
Current 



1 45 ft 




Hi (at 


IBilf 


2) 














1 


b c 




25 


c / 








\ 

J 
































BS 
















L 


















-26°C- 


— T" 
i\ 







Maximum Available Gain 
vs Collector Current 




lc - COLLECTOR CURRENT (mA) 



2.0 4.0 8.0 8 10 
lc - COLLECTOR CURRENT (mA) 




6-70 



COMMON EMITTER Y PARAMETERS VS FREQUENCY 



Process 44 



Input Admittance vs 
Collector Current- 
Output Short Circuit 




2 4.0 6 9 10 12 
l c - COLLECTOR CURRENT [mAI 



Reverse Transfer 
Admittance vs Collector 
Current-Input Short 
Circuit 



= 12V 



2.0 4.D 6.0 1.0 10 
1 C - COLLECTOR CURRENT (mA) 



Forward Transfer 
Admittance vs Collector 
Current-Output Short 
Circuit 



i 

X 100 







f 










V 
















1 = 4 


Mb 






































s 






































































s 



























































































































2.0 4.0 6.0 8.0 10 
l c -COLLECTOR CURRENT (mA) 



Output Admittance vs 
Collector Current- 
Input Short Circuit 



f 

j OS 



2.0 4.0 6.0 8 10 
lq - COLLECTOR CURRENT (mA) 



Input Admittance vs 
Emitter Current- 
Output Short Circuit 




2.0 4.0 6.0 10 10 
l E - EMITTER CURRENT (mA) 



Reverse Transfer 
Admittance vs Emitter 
Current-Input Short 
Circuit 



















f i GO MHi 




























































In 




















V CE =SBV. 1 


m 
































































% 








m 












L 














■ 5V 




































\ 1 1 















2 4.0 6.0 1.0 10 
l E - EMITTER CURRENT (mA) 



Forward Transfer 
Admittance vs Emitter 
Current-Output Short 
Circuit 

































CE ' 1 


V 


















-11 
















15 


V 


I" 


-h 














i.. 


































































b 






CI 




ov 


































Vcs 


15V 


















NJiv 




















IT 









2.0 4.0 6.0 8.0 10 
l E - EMITTER CURRENT (mA) 



Output Admittance vs 
Emitter Current Input 
Short Circuit 



f 60 






























































V 
















v 


CE 


= 5.0V 


































































15 


V 












v ( 


Ho, 


15 


IL 






b, 


- 


















5 OV 







































2.0 4.0 6.0 8.0 10 
It - EMITTER CURRENT (mA) 



Input Admittance vs 
Collector Current- 
Output Short Circuit 




Reverse Transfer 
Admittance vs Collector 
Current-Input Short 
Circuit 





1 












V CE = 12V 




3 














1 


20 


IM 


Hi 




































































































b 































































































l c - COLLECTOR CURRENT (mA) 



2.0 4.0 6.0 8 10 
\ c - COLLECTOR CURRENT (mA) 



Forward Transfer 
Admittance vs Collector 
Current-Output Short 
Circuit 




Output Admittance vs 
Collector Current - Input 
Short Circuit 




COLLECTOR CURRENT ImA) 



2 4 6 8 (0 12 
l c - COLLECTOR CURRENT (mA) 



Input Admittance vs 
Frequency - Output 
Short Circuit 




S.O 10 SO 100 
f - FREQUENCY (MHil 



Reverse Transfer 
Admittance vs Frequency 
Output Short Circuit 



I U 

I i.o 

< 

t 



l E = 2.0 mA 



Forward Transfer 
Admittance vs Frequency 
Input Short Circuit 



Output Admittance vs 
Frequency - Input 
Short Circuit 



SO 10 50 100 

f - FREQUENCY (MHi) 




50 10 SO 100 500 1000 
1 - FREQUENCY (MHi) 



SO 10 50 100 

I - FREQUENCY (MHil 



6-71 



Process 44 



COMMON BASE Y PARAMETERS VS FREQUENCY 



Input Admittance vs 
Collector Current- 
Output Short Circuit 



















-ttv 














— 




























































































\ 
























>« 

































2.0 4.1 60 SO II 
l c - COLLECTOR CURRENT |r»A) 



Reverse Transadmtttance 
vs Collector Current- 
Input Short Circuit 

? - 


j, 

i '" 

1 « 

1 

« 20 

1 " M 


1 " 

|-,« 

5 -ISO 

a 

3 200 

K 

|-M 

i 300 

IP 


V c . " 1W 

f . 700 UHt 


















































































* 




















































2.0 4.0 1.0 1.0 10 > 



lc - COLLECTOR CURRENT (itiA) 



Forward Transadmittance 
vs Collector Current- 
Output Short Circuit 

"5 



Output Admittance vs 
Collector Current- 
Input Short Circuit 




l c - COLLECTOR CURRENT [mA) 



Maximum Stable Gain 
vs Collector Current 
Common Base 
Configuration 




2.0 4.0 60 
l c - COLLECTOR C 



Common Base 
Configuration Stability 
Factor-k vs Collector 
Current 




l c COLLECTOR CURRENT (mAl 



Rollrtt it.b.l.ty helm "fa" * defined w: R 



Maximum Stable Gain vs 
Frequency Common 
Base Configuration 




... p 

1U0.F \ 




h-0 



FIGURE 3. 200 MHz Common Base Power Gain, 
Noise Figure, Automatic Gain Control 
Test Circuit. 



6-72 



National 
Jud Semiconductor 




Process 45 NPN AGC-IF Amp 



DESCRIPTION 

Process 45 is an overlay double diffused silicon 
device, with a Faraday shield diffusion. 

APPLICATION 

This device was designed for use as a forward AGC 
amplifier in IF amplifiers without neutralization. 

PRINCIPAL DEVICE TYPES 



TO-72 
TO-92 



SE5055 (pkg 281 
MPS-H32 (BEC) 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


Pg 


f = 45 MHz, V CE = 10V, l c = 3 mA, 
R G = 50S2 


27.0 


29.5 




dB 


Fig. 1 


NF 


T - 4b MHz, V CE 1UV, lc - J mA, 
R G = 5012 




2.8 


5.0 


dB 


Fig. 1 


c re 


V CB = 10V, l E = 




0.13 


0.22 


pF 


TO-72 


c„ 


V CB = 10V, l E =0 




0.20 


0.30 


pF 


TO-92 


V AG c 


f = 45 MHz, V cc * 12V 
30 dB Gain Reduction 


3.8 


4.4 


5.0 


V 


Fig. 1 


V AG c 


f » 45 MHz, V cc = 12V 
50 dB Gain Reduction 




6.8 


8.0 


V 


Fig. 1 


s 


V CE = 10V, l c =2mA,f = 100 MHz 


3.0 


5.5 










V CE = 10V, l c = 2 mA 


30 


80 


200 






h FE 


V CE = 10V, l c = 10 mA 


18 


35 








V CE(SAT) 


l c = 10 mA, l B = 5 mA 




. 1.0 


2.0 


V 




^BEISATI 


l c = 10 mA, l B = 5 mA 




0.92 


1.0 


V 




BV C eo 


l c = 1 mA 


30 






V 




BV C bo 


l c = 100 uA 


30 






V 




BV EBO 


l E = 10uA 


4.0 






V 




IcBO 


V CB « 20V 






100 


nA 




'ebo 


V EB =3V 






50 


nA 



















o 
o 
o 

(/> 

v> 



6-73 



DC Current Gain vs 
Collector Current 



DC Pulse Current Gain 
vs Collector Current 




20 4.0 6.0 1.0 
l c - COLLECTOR CURRENT (mAf 



l c - COLLECTOR CURRENT (mA) 



Process 45 



Base-Emitter On Voltage 
vs Collector Current 





1 Mill 












T. ■ 


25 C 












f 








T«- 














1M'( 















































































1.0 10 1H 

- COLLECTOR CURRENT (mA) 



Maximum Power 
Dissipation vs 
Ambient Temperature 



Collector Saturation 

Collector Cutoff Current Voltage vs Collector Base Saturation Voltage 

Noise Figure vs Frequency vs Ambient Temperature £ Current _ vs Collector Current 




1 - FREQUENCY IMHi) T A - AMBIENT TEMPERATURE (°C) * l c - COLLECTOR CURRENT (mA) l c - COLLECTOR CURRENT (mA) 




COMMON EMITTER Y PARAMETERS VS FREQUENCY 



Process 45 



Collector Current 
Output Short Circuit 



v ct = 


10V 














f ■ 


ib 














































9 


















































































1 





| 004 



Reverse Transfer 
Admittance vs Collector 
Current-Input Short 
Circuit 















V CE - 10V 








- 








1 - 




11 


























- 





























































































Forward Transfer 
Admittance vs Collector 
Current - Output Short 
Circuit 



Output Admittance vs 
Collector Current- 
Input Short Circuit 



l c - COLLECTOR CURRENT ImA) 



It - COLLECTOR CURRENT (mA) 




Input Admittance vs 
Collector Voltage- 
Output Short Circuit 




Reverse Transfer 
Admittance vs Collector 
Voltage - Input Short 
Circuit 



nzr 






l c ■ 2 mA 






- 


















































L 



















































































V e , - C011ECT0R EMITTER V0LTACE M 



!.» 1.0 S.O 80 10 
« - COLLECTOR VOLTAGE IVI 



Forward Transfer 
Admittance vs Collector 
Voltage-Output Short 
Circuit 



S 





2 OmA 
5MHI -p 


; 




ft 




















44- 




s 









Output Admittance vs 
Collector Voltage- 
Input Short Circuit 




V CI - COLLECTOR VOLTAGE (V) 



V ce - COLLECTOR EMITTER VOLTAGE (VI 



Input Admittance vs Reverse Transadmittance Forward Transadmittance Output Admittance vs 

Frequency - Output vs Frequency - Input vs Frequency - Output Frequency - Input 

Short Circuit Short Circuit Short Circuit Short Circuit 




I - FREQUENCY (MHz) t - FREQUENCY {MHz, , . FREQUENCY (MHi) | - FREQUENCY (MHz) 



6-75 



Process 45 

COMMON EMITTER PERFORMANCE 



Maximum Available Gain 
vs Collector Current 




Maximum Available Gain 
vs Frequency 




20 30 «0 SO 
f - FREQUENCY IMHtl 



Maximum Stable Gain 
vs Collector Current 




20 4 <0 ID 

l c - COLLECTOR CURRENT ImA) 



Collector Current 




I C -C011ECT0R CURRENT Ml 



Automatic Gain Control 
and Noise Figure vs 
Automatic Gain Control 
Voltage 







V cc = 12V 
- 1 = 45 MHi 















1.0 2.0 3.0 4.0 5.0 6.0 7.0 

Vagc - AUTOMATIC GAIN CONTROL 
VOLTAGE (V) 



Power Gain and Noise 
Figure vs Collector 
Current 




1.0 4 J 6 10 tO 1? 
4 - COLLECTOR CURRENT (mA) 




FIGURE 1. SE5055 45 MHz Gain, Noise Figure, AGC Circuit 



6-76 



National 
AjM Semiconductor 



D.0020 
[0.0508) 




Process 46 NPN RF-IF Amp 



DESCRIPTION 

Process 46 is an overlay double diffused, silicon 
epitaxial device. 

APPLICATION 

This device was designed for linear RF amplifier 
applications up to 100 MHz with collector current 
in the 1 mA to 30 mA range. 

PRINCIPAL DEVICE TYPES 

TO-92 ST5025 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 




f = 45 MHz, V CE = 10V, l c = 10 mA 


25 


28 




dB 




c cb 


V CB = 10V 




0.8 


1.0 


pF 


TO-92 


9oe 


f = 45 MHz, V CE = 10V, l c = 10 mA 






200 


Mm ho 




h,e 


l c = 10 mA, V CE = 10V, f = 100 MHz 


3.0 


4.50 








h FE 


l c = 10 mA, V CE = 10V 


30 


100 


250 






V CE(SAT) 


l c = 20 mA, l B = 1 mA 




0.2 


0.6 


V 




BVceo 


l c = 1 mA 


30 


55 




V 




BVcbo 


l c = 100 uA 


35 






V 




BV EBO 


l c = 10/iA 


4.0 






V 




'cbo 


V CB = 30V 






50 


nA 




'E80 


V EB =3V 






50 


nA 





6-77 



Process 46 



Maximum Power 

DC Pulse Current Gain Base-Emitter On Voltage Dissipation vs 

vs Collector Current vs Collector Current Ambient Temperature 




Maximum Power Reverse Transfer 

Dissipation vs Case Capacitance vs Reverse Contours of Constant Gain 

Temperature Bias Voltage Bandwidth Product (f j) 





Process 46 





o 
o 




DESCRIPTION 

Process 47 is an overlay double diffused, silicon 
epitaxial device, with a Faraday shield diffusion. 

APPLICATION 

This device was designed for common-emitter 
low noise amplifier and mixer applications in the 
100 fiA to 15 mA range to 300 MHz, and low 
frequency drift common-base VHF oscillator 
applications with high output levels for driving 
FET mixers. 

PRINCIPAL DEVICE TYPES 



TO-72 
TO-92 



SE5035 

ST5030B, MPSH24, MPSH11 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


Pg 


f = 45 MHz, V CE = 10V, l c =4 mA 


29 


33 




dB 


Fig. 1 


Pg 


f = 200 MHz, V CE = 10V, l c = 2 mA 


17 


19.5 




dB 


Unneutralized 
Fig. 3 


NF 


f = 200 MHz, V CE = 10V, l c = 2 mA, 
R s = 50ft 




2.0 


4.0 


dB 


Fig. 3 


rb'Cc 


f = 79.8 MHz, V CB - 10V, l E = 5 mA 




6.5 


15.0 


ps 




h f . 


f = 100 MHz, V CE = 15V, l c = 7 mA 


6 


10 








c ib 


V E e = 0.5V, l c =0 




2.0 


3.0 


pF 


TO-92 


C cb 


V CB = 10V, l E =0 


0.25 


0.33 


0.40 


pF 


TO-92 


9oe 


f = 45 MHz, V CE = 15V, l c = 7 mA 






125 


umho 




roep 


f = 10.7 MHz, V CE = 10V, l c = 2 mA 


100k 






n 




h FE 


V CE = 15V, l c = 7 mA 


40 


100 


200 






V CE(SAT> 


l c = 20 mA, l B = 1 mA 




0.3 


1.0 


V 




V BE{SAT) 


l c = 10 mA, l B = 5 mA 




0.85 


0.92 


V 




BV CEO 


l c f 10 mA 


20 


30 




V 




BV CB o 


l c = 100 ^A 


35 


45 




V 




BV ESO 


l E = IOuA 


4.0 






V 




'cBO 


V CB = 30V 






50 


nA 




'ebo 


V EB =3V 






50 


nA 





■ 



6-80 



Process 47 



DC Pulse Current Gein 
vs Collector Current 



I 

s « 

s 







































































1 










N 


! 












T. 


■2S-C 




































































1 



















































































































Base-Emitter On Voltage 
vs Collector Current 



i 

j? 0.5 



V C6 ^ 1BV 

































































































































































































































































Maximum Power 
Dissipation vs 
Ambient Temperature 




Maximum Power 
Dissipation vs 
Case Temperature 




■ 100 150 

T c - CASE TEMPERATURE <°C) 



vs Re 



Bias Voltage 





3.0 




u 


s 




1 


18 




U 


I 










J 



Collector-Base Diode 
Reverse Current vs 
Temperature 



S 100 











































■ V 


1 - 


30V 































































































































































































REVERSE BIAS VOLTAGE (V) 



25 50 75 100 125 
Tj - JUNCTION TEMPERATURE CO 



DC Current Gain vs 
Collector Current 

















v c , . 10V 
















T. 


2< 


•c 



































































































































































•*•"'« 

lc - COLLECTOR CURRENT M\ 



Contours of Constant 
Gain Bandwidth 
Product Iff) 




Max Stable Gain vs 
Collector Current 























































































































































FREQUENCY- «5MH. 



6-81 



Process 47 

COMMON EMITTER VS FREQUENCY Y PARAMETERS 



Input Admittance vs Input Admittance vs Input Admittance vs Input Admittance vs 

Collector Current Collector Current Collector Voltage Frequency 




„ I — I — I — I — I — I — I — I — I — I — I „ I — I — I — I — I — I — I — I — I — I — I o I — I — I — I — i — I — I — I — I — 1 — 1 o 11111 1 1 — 1 — LJ - 

I I I 11 II ■ 20 4.0 8 IS 4 11] IS 20 SO 100 S00 

l c - COLLECTOR CURRENT |mAI l c - COLLECTOR CURRENT tmA) Vet " COLLECTOR VOLTAGE IV) I - FREQUENCY IMHil 



i 



Forward Transfer 
Admittance vs 
Collector Current 



i 

2 .0 



- 15V 



k 



'Ms 



4 1 II 16 20 24 
l c - COLLECTOR CURRENT (mAI 



Forward Transfer 
Admittance vs 
Collector Current 




Forward Transfer 
Admittance vs 
Collector Voltage 



Forward Transfer 
Admittance vs 
Frequency 




lc - COLLECTOR CURRENT (mA) 



V C £ - COLLECTOR VOLTAGE |V| 



f- FREQUENCY IMH;) 



Reverse Transfer 
Admittance vs 
Collector Current 



FREQUENCY - 45 MHi - 



Reverse Transfer 
Admittance vs 
Collector Current 




Reverse Transfer 
Admittance vs 
Collector Voltage 

















l c * 7 mA 
f «MHi 




































V 1 1 




















































































































-In 











I 4 6 8 10 12 14 IS 18 20 
V CE - COLLECTOR VOLTAGE (V) 



Reverse Transfer 
Admittance vs 
Frequency 




F - FREQUENCY 1MB; 



Output Admittance vs Output Admittance vs Output Admittance vs Output Admittance vs 

Collector Current Collector Current Collector Voltage Frequency 




1 000 



6-82 



Process 47 



Figure vs Collector 
Current 



I 



*»■ 

I-2W 
FIG. 2 


12V 

MHi 


1 










1 


"Tl 



Z.0 4.0 6.0 8.0 10 
lc - COLLECTOR CURRENT (mA) 



Conversion Gain vs 
Collector Current 



f,F =45 MHz 
~fo =200 MHt 
-f LO -245MHi 
_V M -1W 

FIG.1 



1 2 3 4 5 
l c - COLLECTOR CURRENT (mA) 



I r • i T, | OUTFIT! 

(-i •""'1(4 Hh* 

_, ~ wi< _L 27on< _L 




Ll-0hmrtiRFi;Z23S 
Tl-himirv Sturm #34 *ut 

r dM. 

ry! UimlHt.ii 
dom muni (Mr , OtOO 

cart (10.7 MHz) 



FIGURE 1. 45 MHz Power Gain Circuit 



BKofttfcjry uf wrir. SMi, " 
ItWYHmm 

I Sk. -2S pF. 

FIGURE 2. 200 MHz Conversion Gain Test Circuit 




200 MHz OUTPUT 
INTO SO OHMS 



LI - OHMITE Z 235 RFC 

L2 - «T #14 WIH£. 1"L X l/4' IO TAPPED 1-1/2 T FROM COLD S 
ALL CAPACITANCE IN pF, ALL RESISTANCE IN OHMS. 

FIGURE 3. Unnaturalized 200 MHz PG IMF Ten Circuit 



6-83 




National 
Semiconductor 




Process 48 
NPN High Voltage Video Output 



DESCRIPTION 

Process 48 is a nonoverlay triple diffused, silicon 
device with a field plate. 

APPLICATION 

This device was designed for application as a video 
output to drive color CRT. 

PRINCIPAL DEVICE TYPES 



TO-39 
TO-202 



SE7056 

SV7056, NSD134 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 




Ccb 


V CB = 20 V 




2.5 


3.5 


pF 


TO-39 


"fe 
h fo 


f = 20 MHz, V CE = 100 V 

l c = 15 mA 

l c = 1 mA, V CE = 10V 


2.5 
15 


4.0 
50 








hfe 


l c = 10 mA, V CE = 10V 


40 


80 


160 






hfe 


l c =30mA, V CE = 10V 


30 


100 








V CE(SAT) 


l c = 20 mA, l B = 2 mA 




0.35 


1.0 


V 




Vbe(SAT) 


l c = 20 mA, l B = 2 mA 




0.74 


0.85 


V 




c ab 


V EB = 0.5V 




45 


70 


pF 




BVceo 


l c = 5 mA 


220 


280 


320 


V 




BV CBO 


l c = 100 mA 


320 


410 


470 


V 




BV EBO 


I e = 100mA 


7.0 






V 




'cBO 


V CB = 150V 






100 


nA 




'ebo 


V EB =6V 






100 


nA 





6-84 



Process 48 



DC Pulse Current Gain 
vc Collector Current 



Base-Emitter On Voltage 
vs Collector Current 



Maximum Power 
Dissipation vs 
Ambient Temperature 




11 1 10 

l c - COLLECTOR 



Guaranteed Maximum DC 
Power Dissipation vs 
Collector-Emitter Voltage, 
TO-39 



Collector to Base and 
Emitter to Base 
Capacitance vs Reverse 
Bias Voltage 



T A - AMBIENT TEMPERATURE fd 

One square inch of copper run 



Contours of Constant 
Gain Bandwidth Product 



Maximum Power 
Dissipation vs Case 
Temperature 









































□ 3 


1ST 


EL) 






































1 


39 


KB 


ARt 











































SO 100 150 200 
T c - CASE TEMPERATURE I 



Collector-Base Diode 
Reverse Current vs 
Temperature 





1 1 








T c = 25°C 








T c =S0°C 








— r 








T c = 1W"C 








l c {MAXi = 0.25A 








T c - 1S0°C 








T c •= 200°C 








V„ - COLLECTOR EMITTER VOLTAGE IV) 



REVERSE BIAS VOLTAGE IV) 



II 20 SO 

It - COLLECTOR CURRENT ImA) 



2S SO 75 100 
Tj - JUNCTION TEMPERATURE CO 



Collector Cutoff Current 
vs Collector Voltage 




SO 100 ISO 200 250 300 
Vc - COLLECTOR TO BASE VOLTAGE IV) 



Base Saturation Voltage 
vs Collector Current 




to II 

l c - COLLECTOR CURRENT (.») 



Collector Saturation 
Voltage vs Collector 
Current 




lc - COLLECTOR CURRENT |mA) 




6-85 




National 
Semiconductor 




Process 49 NPN RF Amp 



DESCRIPTION 

Process 49 is an overlay double diffused silicon 
epitaxial device. 

APPLICATION 

This device was designed for general RF amplifier 
and mixer applications to 250 MHz with collector 
current in the 1 mA to 20 mA range. 

PRINCIPAL DEVICE TYPES 

TO-92 (BEC) MPS6544, MPSH20 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


Pg 


f = 45 MHz, V CE = 10V, l c = 10 mA 


25 


30 




dB 






V C E * 10V, l c = 10 mA 


400 


700 




MHz 




rb'Cc 


f = 31.9 MHz, V CE = 10V, l c = 8 mA 




7.5 


20.0 


PS 


TO-92 


Ccb 


f = 1.0MHz,V CB = 10V, l E =0 




0.55 


0.65 


pF 


TO-92 


n FE 


V CE " 10V, l c = 10 mA 


30 


100 


250 






n FE 


V C E = 10V, l c =4mA 


30 


90 








V BE(ON) 


V CE = 10V, l c » 10 mA 




0.80 


0.95 


V 




VcElSAT) 


l c = 30 mA, l c = 3 mA 




0.15 


0.50 


V 




Soe 


f - 45 MHz, V CE » 10V, l c = 10 mA 






100 


umhos 




roep 


f * 4.5 MHz, V CE - 10V, l c = 2 mA 


80k 






n 




BV CE o 


l c = 1 mA 


30 


40 


55 


V 




BVcbo 


l c = 100 mA 


45 






V 




bv eb0 


l E = 10/jA 


4.0 






V 




ICBO 


V CB = 30V 






100 


nA 




Iebo 


V EB =3.0V 






50 


nA 





6-86 



Process 49 



DC Pulse Current Gain vs 
Collector Current 



or 

T A = 12B°C 



V ce -10V. 

I I 



~i — r 

■ 7S°C 



- T A - -25°C " 



Input Admittance vs 
Collector Current 




Input Admittance vs 
Frequency 



l c - COLLECTOR CURRENT (mA) 




Maximum Power 
Dissipation vs 
Case Temperature 




50 100 150 

T c - CASE TEMPERATURE (°CI 



Reverse Transfer Admittance 
vs Collector Current 



V cl = 20V- 
I ■ « MHi 
T* ■ 15 C 

i I 



-Li 



Reverse Transfer 
Admittance vs 
Frequency 



| 

ll 



V CE = 10V 
l c = 4 mA 








1 




2 


5 1 


















































"fc. — 

























l c - COLLECTOR CURRENT (mA) 



I - FREQUENCY (MHz) 



Maximum Power Forward Transfer Forward Transfer 

Dissipation vs Admittance vs Admittance vs 

Ambient Temperature Collector Current Frequency 




J 1. 10 100 4 1 II 16 SO 100 SO0 



REVERSE 8IAS VOLTAGE (VI ( c - COLLECTOR CURRENT (mA) 1 - FREQUENCY (MHz) 



6-87 



Small Signal Current Gain 
vs Collector Current 




l c - COLLECTOR CURRENT |mA> 



Conversion Gain vs 
Collector Current 



V CE = 10V 

Osc INJECTION = 200 m 
lose ; 250 MHi 
f I4 *213MNi 
I. ■ 45 MHi 



t c - COLLECTOR CURRENT 1mA} 



Conversion Gain vs 
Oscillator Injection Level 



€ 30 



■ 213 MHj 
> 45 MHi 



V, OSCILLATION INJECTION ImV) 




FIGURE 2. 200 MHz Conversion Gain Test Circuit 




National 
Semiconductor 




Process 60 PNP Medium Power 



DESCRIPTION 

Complements Process 09. 
APPLICATION 

These devices are designed for general purpose 
amplifier applications at collector currents to 
500 mA. 

PRINCIPAL DEVICE TYPES 

TO-92 MPS6563 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


Cob 


V CB = 10V 




8 


12 


pF 




Cm 


V EB - iv 




22 


26 


pF 




NF 


V CE • 10V, l c = 1 mA 




0.5 




dB 




R s = Ik.f = 1 kHz 










H 


V CE = 10V, l c = 100 mA 




400 




MHz 




h F E 


V C e = IV, l c = 1 mA 


55 


160 


325 






hFE 


Vce = IV, l c =50 mA 


50 


150 


300 






"FE 


V CE = 1V, l c = 150 mA 


40 


125 


245 






hFE 


Vce = IV, l c =500 mA 


20 


65 


125 






VCEISAT) 


l c = 150 mA, l B = 15 mA 




0.1 


0.2 


V 




VcEISATI 


l c = 500 mA, l B = 50 mA 




0.3 


0.5 


V 




V BE(SATI 


l c = 150 mA, l B = 15 mA 




0.8 


0.96 


V 




V BE (SAT) 


l c = 500 mA, l B = 50 mA 




0.98 


1.2 


V 




!CES 


V CE = 20V 






100 


nA 




'CEO 


v CE - 20V 






100 


nA 




BVcBO 


l c = 100 (JA 


40 






V 




BV E BO 


l E = 10/jA 


7 


8 




V 




BVcEO 


l c = 10 mA 


20 


30 


40 


V 





6-89 



Process 60 



Base-Emitter Saturation 

DC Pulse Current Gain Collector-Emitter Saturation Voltage vs Collector 

vs Collector Current Voltage vs Collector Current Current 




l c - COLLECTOR CURRENT CmAI lc - COLLECTOR CURRENT (mA) l e - COLLECTOR CURRENT ImAI 



Base-Emitter On Voltage 
vs Collector Current 




Collector-Base Capacitance 
vs Reverse Bias Voltage 




Input Capacitance vs 
Reverse Bias Voltage 



I c - COLLECTOR CURRENT (mA) 



REVERSE BIAS VOLTAGE (V) 



REVERSE BIAS VOLTAGE (V) 



Collector-Base Diode 

Reverse Current vs Noise Figure Contours of Constant Gain 

Temperature vs Frequency Bandwidth Product (fj) 




Tj - JUNCTION TEMPERATURE ( C) I - FREQUENCY (kHz) I,. COLLECTOR CURRENT (mA) 



6-90 



Process 60 




Small Signal Output Small Signal Voltage 

Conductance vs Feedback Ratio vs 

Collector Current Collector Current 




tc - COLLECTOR CURRENT <mA] l c - COLLECTOR CURRENT (mA) 



Maximum Power Dissipa- 
tion vs Ambient 
Temperature 




T a - AMBIENT TEMPERATURE I C) 



*One square inch of copper run 



Maximum Power Dissipa- 
tion vs Case Temperature 




6-91 



CM 
(O 

V) 
(0 

© 
o 
o 




National 
Semiconductor 




Process 62 PNP Small Signal 



DESCRIPTION 

Process 62 is a nonoverlay double diffused, silicon 
epitaxial device. Complement to Process 07. 

APPLICATION 

These devices are designed for low level, high gain, 
low noise general purpose amplifier applications. 

PRINCIPAL DEVICE TYPES 

TO-18 2N3550 
TO-46 2N2605 

TO-92 2N5086 (EBC), 2N4058 (ECB) 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


NF 


V CE = 5V, l c = 10fiA, R s = lOkfi, 
P BW = 15.70 kHz 




1.20 


3 


dB 




h fe 


V CE = 5V, l c = 500 juA, f = 20 MHz 


5 


6 








c. b 


V EB = 0.5V 




6 


7 


pF 




C cb 


V CB f 5V 




3.5 


5 






h FE 


l c = 10/jA, V ce =5V 


50 


200 


400 






h FE 


l c = 100 /uA, V ce = 5V 


50 


250 


500 






h FE 


l c i 500 MA, V ce = 5V 


100 


260 


600 






h FE 


l c = 1 mA, V CE = 5V 


50 


270 


500 






h FE 


l c = 10 mA, V CE ■ 5V 


50 


270 


500 






VcE(SAT) 


l c = 1 mA, l B = 0.1mA 




0.05 


0.10 


V 




V CE(SAT) 


l c = 10 mA, l B = 1 mA 




0.08 


0.12 


V 




V BE(SAT) 


l c = 1 mA, l B = 0.1 mA 




0.68 


0.70 


V 




^BEISAT) 


l c = 10 mA, l B = 1 mA 




0.77 


0.90 


V 




BVceo 


l c = 1 mA 


35 


65 


70 


V 




BV CBO 


l c = 100 MA 


65 






V 




BV EBO 


l E = 10f/A 


7 






V 




'cBO 


V CB =45V 






50 


nA 




'ebo 


V EB = 5V 






50 


nA 





692 



Process 62 



Maximum Power Maximum Power 

DC Pulse Current Gain Base-Emitter On Voltage Dissipation vs Dissipation vs 

vs Collector Current vs Collector Current Ambient Temperature Case Temperature 




Collector and Base Input and Output Contours of Constant 

Collector Cutoff Current Saturation Voltage vs Capacitances vs Reverse Gain Bandwidth 

vs Ambient Temperature Collector Current Bias Voltage Product (fj) 




Collector-Base Diode Contours of Constant Contours of Constant Contours of Constant 

Current vs Temperature Narrow Band Noise Figure Narrow Band Noise Figure Narrow Band Noise Figure 




6-93 



Contours of Constant 
Narrow Band Noise Figure 




0.01 01 1.0 10 

lc ™ COlLECTOfl CURRENT (roA) 



Process 62 



Equivalent Input Noise 
Voltage and Noise Current 
vs Collector Current 




Wide Band Noise Figure 

vs Source Resistance Noise Figure vs Frequency 




R s - SOURCE RESISTANCE (li I i - FREQUENCY (Hi) 



SMALL SIGNAL CHARACTERISTICS <f = 1.0 kHz) 



SYMBOL 


CHARACTERISTIC 


MIN. 


TYP. 


MAX. 


UNITS 




TEST CONDITIONS 


n ie 


Input Resistance 


2.5 


8.0 


20 


kfi 


lc 


= 1 .0 mA V CE = -5.0V 


h oe 


Output Conductance 


5.0 


19 


50 


umho 


"c 


= 1.0 mA V CE = -5.0V 


hre 


Voltage Feedback Ratio 






10 


x10~ 4 


lc 


= 1.0 mA V CE = -5.0V 




Small Signal Current Gain 


100 


250 


800 




lc 


= 1.0 mA V C6 = -5.0V 





National 
Semiconductor 




Process 63 PNP Medium Power 



DESCRIPTION 

Process 63 is a nonoverlay double diffused, silicon 
epitaxial device. Complement to Process 20. 

APPLICATION 

This device was designed for use as general purpose 
amplifiers and switches requiring collector currents 
to 500 mA. 

PRINCIPAL DEVICE TYPES 

TO-5 2N2905A 

TO-18 2N2907A 

TO-92 2N4403 (EBC), 2N3702 (ECB) 

TO-105 2N3645 

TO-106 2N4143 

TO-92+ TN2905A 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


ton 


l c = 150 mA, l B1 =15 mA 




30 


45 


ns 


Fig. 1 


toff 


l c = 150 mA, l B2 = 15 mA 




220 


290 


ns 


Fig. 2 


c cb 


V CB = 10V 




6 


8 


pF 


TO-18 


c. b 


V EB = 0.50V 




15 


18 


pF 


TO-18 




l c = 20 mA, V CE = 20V, f = 100 MHz 


1.5 


2.5 








NF (spot) 


l c = 100 mA, V ce = 10V, R s = 1k 
f = 1 kHz 




1.5 


3 


dB 




h FE 


l c = 1 mA, V CE = 10V 


50 


140 


400 






h FE 


l c = 10 mA, V CE = 10V 


50 


140 


400 






h FE 


l c = 100 mA, V CE = 10V 


50 


95 


400 






n F E 


i e = 150 mA, V CE - 10V 


40 


150 


350 






h FE 


l c = 500 mA, V CE = 10V 


40 


50 


200 






VcElSATI 


l c = 150 mA, l B = 15 mA 




0.25 


0.40 


V 




V CE(SATI 


l c = 500 mA, l B = 50 mA 




0.60 


1.00 


V 




Vbeisat) 


l c = 150 mA, l B = 15 mA 




0.90 


1.3 


V 




V BE(SAT) 


l c = 500 mA, l B = 50 mA 




1.10 


1.6 


V 




BVceo 


l c = 10 mA 


35 


50 


65 


V 




BV CBO 


l c = 100 /jA 


45 


70 


95 


V 




BV CES 


i c = 10nA 


0.45 




90 


V 




BV EBO 


l E = 10pA 


7 






V 




IcBO 


V CB =40V 






50 


nA 




!ebo 


V EB =3V 






50 


nA 





6-95 















-16V 




< 200 NS 





~-j<M««s[-— , 



O 



FIGURE 1. Saturated Turn-On Switching Time Test Circuit 



FIGURE 2. Saturated Turn-Off Switching Time Test Circuit 



SMALL SIGNAL CHARACTERISTICS (f = 1.0 kHz) 



SYMBOL 


CHARACTERISTIC 


MIN. 


TYP. 


MAX. 


UNITS 


TEST CONDITIONS 


h le 


Input Resistance 




480 


2000 


ohms 


l c = 10 mA 


V CE = -10V 


Ke 


Output Conductance 




80 


1200 


Mtnhos 


l c = 10 mA 


V CE =-10V 


Ke 


Voltage Feedback Ratio 




162 


1500 


X10" 6 


l c * 10 mA 


V CE = -10V 


h,e 


Small Signal Current Gain 


100 








l c = 10 mA 


V CE =-10V 







TYPICAL COMMON EMITTER CHARACTERISTICS (f = 1.0 kHz) 




V„ - COLIECTOH VOlTACf IVI T. - AMBIENT TEMPERATURE (*C1 



6-97 



ffflk National 

Jud Semiconductor 




Process 64 
PNP High Speed Switch 



DESCRIPTION 

Process 64 is an overlay double diffused, gold 
doped silicon epitaxial device. Complement to 
Process 22. 



APPLICATION 

This device was designed for high speed saturated 
switching applications at collector currents to 
200 mA. 



PRINCIPAL DEVICE TYPES 



TO-52 
TO-92 



2N2894A 
PN4313 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


ton 




I c = 30 mA, l B1 = 3 mA 




10 


20 


ns 


Fig. 1 


*off 


l c = 30 mA, l B2 = 3 mA 




21 


30 


ns 


Fig. 1 


t, 


! c = I b i = !b2 " 10mA 




15 


20 


ns 




Cob 


V CE = 5V 




3.0 


4.5 


pF 


TO-18 


c ib 


V EB = 0.5V 




5.0 


6.0 


pF 


TO- 18 


hfe 


f = 100 MHz, l c = 30 mA, V CE = 10V 


8 


12 








hr-E 


l c = 1 mA, V CE = 1V 


20 


65 








h FE 


l c = 10 mA, V CE = 1V 


30 


95 














h F E 


l c = 30 mA, V CE = 1V 


40 


95 


130 






h FE 


l c = 100 mA, V CE = 1V 


30 


85 








V CE(SAT) 


l c = 10 mA, l B = 1 mA 




0.08 


0.15 


V 




V CE(SAT) 


l c = 30 mA, l B = 3 mA 




0.11 


0.19 


V 




V CE(SAT) 


r G = 100 mA, l B = 10 mA 




0.28 


0.45 


V 




V BE(SAT) 


l c = 10 mA, l B = 1 mA 




0.80 


0.92 


V 




V BE(SAT) 


l c = 30 mA, l B = 3 mA 




0.90 


1.15 


V 




V BE(SAT) 


l c = 100 mA, l B = 10 mA 




1 10 


1.50 


V 




BVceo 


l c = 10 mA 


12 




15 


V 




BV CBO 


l c = 100 mA 


12 




15 


V 




BV EBO 


l E = 10 /iA 


4.5 






V 




Ices 


V CE = 10V 






50 


nA 





6-98 



Process 64 



Pulsed DC Current Gain 
vs Collector Current 




Base-Emitter On Voltage 
vs Collector Current 




Base Saturation Voltage 
vs Cotlector Current 



2 -u 
< 

1 -u 
S 

1 -" 











































































1 


























































-W 


E 












































































25 


C 










C 











































































l c - COLLECTOR CURRENT ImAI 



I -1 -10 -100-^00 

f c - COLLECTOR CURRENT fmAI 



Collector Saturation 
Voltage vs Collector 
Current 



I -0 02 
< -0.0) 



k 


■ 1 


Is 






















































































m 


°C 




















-55 C 






















































! 


1 









































-1 -10 -100-200 

- COLLECTOR CURRENT ImA) 



Collector-Base Reverse 
Current vs Reverse Bias 

I Voltage 

5 too 




Collector-Base Diode 
Reverse Current vs 
Temperature 




V CE - COLLECTOR EMITTER VOLTAGE (V) 



i 50 75 100 125 150 
T A ~ AMBIENT TEMPERATURE ("CI 




Process 64 



Switching Times vs 
Collector Current 













I C '10I BI = HI B , 
V CC =-30V 


































































t 






















V 






















1 1, ■ 





































































1.0 2.0 GO 10 20 SO 100 ZOO 
i c ~ COLLECTOR CURRENT ImA) 



PULSE GENERATOR 
t, < 1.0 ra 
PW = 400ns 
PPi = 1 SO 

z IN - mi 



> MQ 
OR < 



ZK |^ 



TO SAMPLING SCOPE 



1,<1.0m 
Z,„>t00K 



Switching Times vs 
Temperature 




-SO SO 100 

T A - AMBIENT TEMPERATURE t°C) 



FIGURE 1. Switching Time Test Circuit 



Delay Time vs Turn On 
Base Current and Reverse 
Base-Emitter Voltage 



Rise Time vs Collector 
and Turn On Base 
Currents 




l 81 - TURN ON BASE CURRENT luAl 



10 2.0 SO 10 20 SO 100 
l c - COLLECTOR CURRENT (mA) 



Storage Time vs Turn On 
and Turn Off Base 
Currents 




l„ - TURN OFF BASE CURRENT |mA) 



Storage Time vs 
Turn On and Turn Off 
Base Currents 





1 

20 n, 












-J- 




M 














1 


M 








;*-"*" 


l c = 30 mA 
V cc = -3.0V 



2 4.0 6.0 8 10 
l B , - TURN OFF BASE CURRENT ImAI 



Storage Time vs 

Turn On and Turn Off Fall Time vs Turn On and Fall Time vs Turn On and Fall Times vs Turn On and 

Base Currents Turn Off Base Currents Turn Off Base Currents Turn Off Base Currents 




SO 10 IS 20 ZS 30 5 1.0 IS 2 25 30 2.0 4.0 CO 1.0 10 SO 10 15 20 2S JO 

l BI - TURN OFF BASE CURRENT (mA) l„ - TURN OFF BASE CURRENT (mA) | BI _ TURN OFF BASE CURRENT ImA) - TURN OFF BASE CURRENT ImA) 



Process 64 



COMMON EMITTER VS FREQUENCY Y PARAMETERS 




Output Admittance vs 
Collector Current and 
Voltage-Input Short 
Circuit 



f = 100 mc 








1 1 1 












\ 


CE 




i 


n / 




























































v — 
















































































-H+- 



-1 -I -S -10 -10 -so - 
l c - COLLECTOR CURRENT (mA] 



Forward Transfer 
Admittance vs 
Collector Current and 
Voltage -Output 
Short Circuit 



f 1C 






1 1 

"V ce ■ -10V 




























-— v c 


H+H 

( = -10V - 

l : 




Ik 









-Z -5 -10 -20 -50 - 
l c - COLLECTOR CURRENT (mA) 



Reverse Transfer 
Admittance vs 
Frequency-Input 
Short Circuit 



Reverse Transfer 
Admittance vs Collector 
Current and Voltage- 
Input Short Circuit 




l c -COLLECTOR CURRENT lmA| 



Noise Figure vs Source 
Resistance and Collector 
Current 















V 


i 


18 

I OS 

js 




























b\ 






































i 






IdBX 
























I* 


I = 


z 

1.0 

















-001 -0-1 -1.0 -10 

l c - COLLECTOR CURRENT ImA) 



Noise Figure vs 



i 



le-0b 
»« ■ 'OV 



1(T 3 I0" J 10"' 1 10 10 1 10 3 
I - FREQUENCY (mel 



M.A.G. vs Frequency 




Propagation Delay Time vs 
Collector Supply Voltage 




f - FREQUENCY (nwl 



V„ - COLLECTOR SUPPLY VOLTAGE (VI 



6-101 




DESCRIPTION 

Process 65 is an overlay double diffused, gold 
doped, silicon epitaxial device. 

APPLICATION 

This device was designed for very high speed 
saturate switching at collector currents to 50 mA. 

PRINCIPAL DEVICE TYPES 

TO-18 2N4208 

TO-92 MPS3640, 2N5771 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


^off 


l c = 10 mA, l B2 ■ 1 mA 




18 


25 


ns 


Fig. 1 




l c = 10 mA, l B i " 1 mA 




11 


15 


ns 


Fig. 1 


u 


lc = !bi = ! B2 = 10 m A 




15 


20 


ns 




C Q {j 


V CB i 5V 




2 


3 


PF 


TO-18 


C| b 


V EB = -5V 




2.5 


3.5 


pF 




h f . 


V CE = 10V, l c = 10 mA, f - 100 MHz 


6.5 


9 








hf. 


l c - 1 mA, V CE = IV 


20 


60 








h«. 


l c = 10 mA, V CE = 1V 


30 


85 


120 






h,. 


l c = 50mA, V CE = IV 


20 


75 








h„ 


l c = 100 mA, V CE = IV 


20 


60 








h„ 


l c = 1 mA, V CE » .5V 


20 


60 








h„ 


l c = 10 mA, V CE - .3V 


20 


67 


150 






hf. 


l c = 50mA, V CE = 1.0V 


20 


60 








V CE(SAT) 


l c ■ 1 mA, l B " .1 mA 




0.10 


0.13 


V 




VcE(SAT) 


l c = 10 mA, l B « 1 mA 




0.12 


0.15 


V 




VcE(SAT) 


l c = 50 mA, l B = 5 mA 




0.25 


0.50 


V 




VbE(SAT) 


l c * 1 mA, l B = .1 mA 




0.73 


0.8 


V 




VbE(SAT) 


l c » 10 mA, l B = 1 mA 




0.88 


0.95 


V 




V BE(SAT) 


l c = 50 mA, l B = 5 mA 




1.00 


1.5 


V 




BV CEO 


l c = 3 mA 


12 


15 


20 


V 




BV CB o 


i c » ioom 


25 


30 


40 


V 




BV EBO 


l c = 10/jA 


4.5 






V 




ICBO 


V CB = 3V 






50 


nA 





6-102 





Input and Output Contours of Constant Maximum Power Maximum Power 

Capacitance vs Reverse Gain Bandwidth Dissipation vs Dissipation vs 

Bias Voltage Product (fy) Ambient Temperature Case Temperature 




REVERSE SIAS VOLTAGE (VI t c - COLLECTOR CURRENT (mA) — AMBIENT TEMPERATURE CC) T c - CASE TEMPERATURE ( C) 



6-103 



Process 65 



Switching Times vs 
Collector Current 



Switching Times vs 
Ambient Temperature 



Delay Time vs Turn On 
Base Current and 
Reverse Base-Emitter 
Voltage 




10 2.0 3.0 4.0 5.0 

l B1 - TURN ON BASE CURRENT {mA> 



Rise Time vs Collector 
and Turn On Base Currents 



v C(: = 


-1 5 


V 




















— — 


- — 1 


- i m , 












10 ■ 












-Mb' 









l c - COLLECTOR CURRENT (mA) 



Storage Time vs Turn Storage Time vs Turn Storage Time vs Turn Fall Time vs Turn On 

On and Turn Off Base On and Turn Off Base On and Turn Off Base and Turn Off Base 

Currents Currents Currents Currents 




1 0.2 0.3 0.4 0.5 1.0 1.0 3 4.0 5 2.0 4,0 6.0 8.0 tO 1 02 0.3 0.4 01 

l 8! - TURN-OFF BASE CURRENT (r*A) - TURN-OFF BASE CURRENT ImA) l BI - TURN-OFF BASE CURRENT (mA) l BT -TURN OFF BASE CURRENT ImA) 



Fall Time vs Turn On Fall Time vs Turn On 

and Turn Off Base and Turn Off Base 

Currents Currents 




FIGURE 1. t on and t Q ff Test Circuit 



DESCRIPTION 



Process 66 is a nonoverlay double diffused, gold 
doped, silicon epitaxial device. Complement to 
Process 23. 

APPLICATION 

This device was designed for general purpose 
amplifier and switching applications at collector 
currents of 10 to 100 mA. 

PRINCIPAL DEVICE TYPES 

TO-92 2N3906 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


L off 


lc = 10 mA, l B2 - 


1 mA 






125 


300 


ns 




L o n 


■ — 1 n m A I 

'c — ' ^ mM, i - 


1mA 

I rnrt 






30 


70 


ns 




Cob 


V CR = 5V 








3.0 


4.5 


pF 


TO-92 


c, b 


V EB = 0.5V 








6.0 


10.0 


pF 


TO-92 


h„ 


f = 100 MHz, V CE 


= 20V, l c = 


- 10 mA 


2.5 


6.0 








NF 

(wide band) 


l c = 100 HA, V CE 


= 5V, R s = 


1 k£2 




2.0 


4.0 


dB 






l c =0.1 mA, V CE 


= 1V 




40 


80 








h*» 


l c = 1 mA, V CE = 


1V 




50 


120 










l c = 10 mA, V CE 


= IV 




50 


150 


300 






h,. 


l c = 50 mA, V CE 


= 1V 




40 


110 








h, 8 


l c = 100 mA, V c 


E = 1V 




20 


40 








VcE(SAT) 


l c = 10 mA, l B = 


1 mA 






0.07 


0.25 


V 




VcE(SAT) 


l c = 50 mA, l B = 


5 mA 






0.12 


0.40 


V 




V BE<SAT> 


l c = 10 mA, l B = 


1 mA 






0.75 


0.85 


V 




V BE(SAT) 


l c = 50 mA, l B = 


5 mA 






0.85 


0.95 


V 




BVceo 


l c = 1 mA 






30 


45 


60 


V 




BVcbo 


l c = 100 mA 






45 




70 


V 




BV CES 


l c = 10/jA 






45 




70 


V 




BV EBO 


l c = 10M 






5.0 






V 




'CBO 


V CB » 25V 










50 


nA 




'ebo 


V EB =4V 








50 


nA 






6-105 




Maximum Power - Collector-Emitter Base-Emitter Saturation 

Dissipation vs Z Saturation Voltage vs _ Voltage vs Collector Contours of Constant Gain 

Case Temperature TO-92 £ Collector Current Z Current Bandwidth Product (fj) 




Collector-Base Diode 
Reverse Current vs 
Temperature 



1000 




25 50 75 100 125 



Tj JUNCTION TEMPERATURE ("0 



Common Base Open 
Circuit Input and Output 
Capacitance vs Reverse 
Bias Voltage 



1 1 

c . 










! Mill! 
1* ■ is°c 
















T0-B2 1 1 I 



















































































































































































01 1.0 10 

REVERSE BIAS VOLTAGE IV) 



Noise Figure vs Frequency 

















l|i "1 


= 5.0V 


















































































n 


•1 


00 


i 
































































■■ ■ 1.0 


mA R 




00. 


1 












lillllll 1 lllllll 










- 


c = 100^AR s = 2.0lin 

lillllll 1 lllllll 













0.1 1.0 10 100 

t - FREQUENCY IWil 



Noise Figure vs 
Source Resistance 




0.1 1.0 10 100 

R s - SOURCE RESISTANCE (MJ 



6-106 



Process 66 



Input Impedance 



Output Admittance 




l c - COLLECTOR CURRENT (mAt 




COLLECTOR CURRENT ImA) 



Current Gain 



Voltage Feedback Ratio 





l c - COLLECTOR CURRENT (mAI 



Turn On and Turn 
Off Times vs Collector 
Current 











































« 


k 
























** 






























































■ 1 


-lei 













- Vbeioffi = 0.SV 
" «.ir >•< • 1.2 " lc' 

1 III 






















o — 











Switching Times vs 
Collector Current 









In. ' 


l„,-l 

-H- 


II . 










_ t, - 





































I C -C011ECT0R CURRENT imA) 



l c - COLLECTOR CURRENT ImAI 



6-107 




National 
Semiconductor 



Process 67 PNP Medium Power 




DESCRIPTION 

Process 67 is a nonoverlay double diffused silicon 
device. Complement to Process 12. 

APPLICATION 

This device is designed for general purpose ampli- 
fier and switching applications at currents to one 
amp. 

PRINCIPAL DEVICE TYPES 



TO-39 
TO-92 
TO-92+ 



2N4033 

MPS4356, MPSA55 
TN4033 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


ton 


l c = 500 mA, l B , =50 mA 


20 


25 


60 


ns 




toff 


l c = 500 mA, l B2 = 50 mA 


200 


250 


400 


ns 




Cob 


V CB = 10V 




11 


15 


pF 


TO-39 


Cib 


V EB = 0.50V 




65 


90 


pF 


TO-39 


h fB 


V CE = 10V, l c = 50 mA, f = 100 MHz 


1.5 


2 








NF (spot) 


l c = 100 mA, R s = 1k, V CE = 10V, 
f = 1 kHz 




0.5 


4 


dB 




h FE 


l c = 0.10 mA, V CE = 10V 


36 


135 








n FE 


l c = 1.0 mA, V CE = 10V 


40 


145 








h FE 


l c * 10 mA, V CE = 10V 


42 


160 


370 






h FE 


l c = 100 mA, V CE = 10V 


40 


150 


350 






h FE 


l c = 500 mA, V CE = 10V 


35 


130 








h FE 


lc = 1A, V CE = 10V 


25 


100 








V CE(SATI 


l c = 150 mA, l B = 15 mA 




0.15 


0.2 


V 




V CE(SAT) 


l c = 500 mA, l B - 50 mA 




0.4 


0.5 


V 




Vbe<sat) 


l c = 150 mA, l B = 15 mA 




0.8 


1.0 


V 




V BE(SAT) 


l c = 500 mA, l 8 = 50 mA 




0.95 


1.2 


V 




BVceo 


l c = 10 mA 


60 


80 


90 


V 




BV CBO 


l c = 100 /uA 


80 


120 




V 




BV E bo 


l E = 10pA 


6 






V 




Icbo 


V CB =60V 






50 


nA 




'ebo 


V EB =4V 






50 


nA 





6-108 



Process 67 



DC Pulse Current Gain 
vs Collector Current 



















'a 


■ 10V j 





























































































































































































































l c -COLLECTOR CURRENT (mA) 



Safe Operating Area TO-39 
With "Wake Field" Type 
296-4 Heat Sink 



Base-Emitter On 
Voltage vs 
Collector Current 



Maximum F 
Dissipation vs 
Ambient Temperature 




11 1.0 io 

l c - COLLECTOR CURRENT 



Gain Bandwidth Product 
vs Collector Current 




V ce - COLLECTOR EMITTER VOLTAGE (VI 



Z.O ZD SO 100 ; 

l c - COLLECTOR CURRENT (mA) 



T ft - AMBIENT TEMPERATURE ! CI 

*One square inch of copper run 

Common Base Open 
Circuit Input and Output 
Capacitance vs F 
Bias Voltage 



Maximum Power 
Dissipation vs 
Case Temperature 









































□ 3 


(ST 


ELI 






































! 


30 


(KO 


AR) 
































TCI 


92 " 









-CASE TEMPERATURE I C] 



Collector-Emitter 
Saturation Voltage vs 
Collector Current 




-0.1 -0.2 -0,5 -1.0 -Z.O -5.0 -10 -20 
REVERSE BIAS VOLTAGE (VI 



20 50 100 ZOO S0O Ik 
lc - COLLECTOR CURRENT (mA) 




Turn On and Turn Off 
Times vs Collector Current 




10 100 



l c - COLLECTOR CURRENT (mA| 



6-109 




DESCRIPTION 

Process 69 is a nonoverlay double diffused, silicon 
epitaxial device. Complements Process 27. 

APPLICATION 

This device was designed for general purpose 
amplifier and switching applications to collector 
currents of 100 mA. 

PRINCIPAL DEVICE TYPES 

TO-18 2N3251A 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


'ON 


I. — in mA In = 1 m A 






70 


ns 




x 

lOFF 


I — 1 f\ n-i A I _ — 1 m A 

\q — iu rriM, ig - i mM 








ns 




NF 


" CE ^ 3 V , Iq — l UU fJ.f\, T — ( KHZ 

R s = 1 kH 




1.7 


4.5 


dB 




Cob 


V CE = 5V 




4 


5.0 


pF 




C|B 


V EB = IV 




6.5 


8.0 


pF 




h 


V C E =20V, l c = 10 mA 


250 


450 




MHz 




h FE 


V C E = iv, lc " 100 mA 


40 


150 


270 






h FE 


V C E " 1V , l c = 1 mA 


55 


175 


315 






h FE 


VcE = 'V, lc = 10 mA 


50 


150 


270 






h FE 


V C e = !V. I c = 50 mA 


15 


85 


150 






h FE 


V C G - 1V, l c = 100 mA 




18 


35 






VCE(SAT) 


l c = 10 mA, l B = 1 mA 




0.15 


0.25 


V 




VCEISATI 


lc = 50 mA, l B = 5 mA 




0.25 


0.50 


V 




Vbeisati 


l c = 10 mA, l B = 1 mA 




0.74 


0.90 


V 




VbE(SAT) 


lc = 50 mA, l B = 5 mA 




0.90 


1.20 


V 




ICBO 


V CB = 30V 




1.5 


50 


nA 




Iebo 


V EB = 4V 




0.05 


50 


nA 




BVcbO 


l c = 10 mA 


50 


70 


95 






BVebo 


l c = 10mA 


5.0 










BVcEO 


l c = 1 mA 


40 


50 


60 






bVces 


l c = 10 mA 




70 









6-110 



Process 69 



DC Pulsed Current Gain Base-Emitter On Voltage Dissipation vs 




l c - COLLECTOR CURRENT ImA) 'c - COLLECTOR CURRENT (mfl) T » - AMBIENT TEMPERATURE I CI 



Maximum Power Collector-Base Diode Collector-Emitter 

Dissipation vs Reverse Current Saturation Voltage vs 

Case Temperature vs Temperature Collector Current 




Base-Emitter On Voltage Output Capacitance vs Input Capacitance vs 

vs Collector Current Reverse Bias Voltage Reverse Bias Voltage 




1 10 50 .1 1 10 50 .1 IS 



l c COLLECTOR CURRENT 1mA) REVERSE BIAS VOLTAGE (V) REVERSE BIAS VOLTAGE IV) 



Contours of Constant Gain 
Bandwidth Product (fj) 



Rb'cc vs Collector Current 














.. 
















































V 


CI " 


10 


'J 








1 ^\ 












V, E 


; 























































































Noise Figure vs Frequency 



I, - COLLECTOR CURRENT ImA) 



l c - COLLECTOR CURRENT ImA) 




6-111 



Process 69 



Small Signal Input 
Noise Figure vs Collector Resistance vs 

Current Collector Current 




Small Signal Current Gain 
vs Collector Current 




1 ™° 

i 

g | 1 LJJ 1 1 l_U 

t i6 n 

l c - COLLECTOR CURRENT (mA) 



Small Signal Voltage 
Feedback Ratio vs 
Collector Current 




l c - COLLECTOR CURRENT 



Small Signal Output 

Conductance vs Turn On and Turn Off 

Collector Current Times vs Collector Current 




Switching Times vs 
Collector Current 













fa' 


« = Ir-flO ! 














-1 














^ t. 
















■ If 
































































































Lj — 
















1 







TO 10 100 

lc — COLLECTOR CURRENT (mA) 



6-112 



Ggl National 

£A Semiconductor 



03(1 



(0.762) 
0.0036 

(o.oaBO) -1 



2 



0009 1 330 
(D~229) 10762) 



Process 70 PNP Memory Driver 



DESCRIPTION 

Process 70 is a nonoverlay double diffused, gold 
doped, silicon epitaxial device. Complement to 
process 25. 



APPLICATION 

This device was designed primarily for high speed 
saturated switching applications. 



PRINCIPAL DEVICE TYPES 



TO-39 
TO-92+ 



2N3467 
TN3467 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 




l c ■ 500 mA, l B1 = 50 mA 




20 


40 


ns 


Fig. 1 


toFF 


l c = 500 mA, l B2 ■ 50 mA 




60 


90 


ns 


Fig. 2 


s 


l c = 50mA,V CE = -10V, f= 100 MHz 


1.75 


2.9 










V CB - -10V 




15 


20 


pF 




c iD 


V* - -0.5V 




65 


80 


pF 




h FE 


l c = 100mA, V CE =~1V 


40 


100 


200 






h FE 


l c = 500 mA, V CE = -1V 


40 


75 


120 






h FE 


to- 1 Amp, V CE = -1V 


40 


85 








VcEISATI 


l c - 150 mA, l B = 15 mA 




0.165 


0.3 


V 




V CE(SATI 


l c = 500 mA, l B = 50 mA 




0.30 


0.5 


V 




V CE(SAT) 


l c = 1 Amp, l 3 = 100 mA 




0.50 


1.0 


V 




V BE(SAT) 


lp.x 150 mA, l B = 15 mA 




0.80 


1.0 


V 




V BE(SAT) 


l c = 500 mA, l B = 50 mA 




0.95 


1.2 


V 




V BE(SAT) 


l c = 1 Amp, l B = 100 mA 




1.1 


1.6 


V 




BV CEO 


l c = 10mA 


30 


40 


50 


V 




B V CBO 


!c = lO/iA 


40 


60 


80 


v 




BV EBO 


l E * 10A1A 


5 


8.0 




v 




'cBO 


V CB = 30V 




10 


100 


nA 




'CEX 


V CE = -30V, V BE(OFF , = 3V 




10 


100 


nA 




W 


V CE = -30V, V BE(OFF) =3V 




10 


120 


nA 

















o 
o 

(D 

(ft 
(ft 

->l 
O 



6-113 



Process 70 



DC Pulse Current Gain 
vs Collector Current 




Collector-Emitter Satura- 
tion Voltage vs 
Collector Current 




Base-Emitter Satura- 
tion Voltage vs 
Collector Current 



if 
II 
II 

l o 

II 









"I 
T 


i 

. - -55"C s 


j_N| 






■2 


ft', 


































= 100 c 














'c 
l B = 10 















l c - COLLECTOR CURRENT (mA) 



l c - COLLECTOR CURRENT (mA) 



10 SO 100 II 

l c - COLLECTOR CURRENT (mA) 



Input & Output Capacitance 
vs Reverse Bias Voltage 




i i il 

REVERSE BIAS VOLTAGE (V) 



BVcER ™ R BE 
I C = 10 mA 




10k 100k 1M 



Delay Time vs Turn On 
Base Current and Reverse 
Base Emitter Voltage 




nun 



l e , - TURN ON BASE CURRENT (mA) 



Storage Time vs Turn On 
and Turn Off Bass Currents 



o -10 




-20 -30 -40 -50 
l B , - TURN ON BASE CURRENT (mA) 



Storage Time vs Turn On 
and Turn Off Base Currents 




Fall Time vs Turn On and 
Turn Off Base Currents 




l B , - TURN ON BASE CURRENT (mA) 



-10 -20 -30 -40 -50 
i BI - TURN ON BASE CURRENT (mA) 



Fall Time vs Turn On and 
Turn Off Base Currents 




Switching Times vs 
Ambient Temperature 




Rise Time vs Collector 
Current and Turn On Base 
Current 




>„, - TURN ON BASE CURRENT (mA) 



T„ - AMBIENT TEMPERATURE ( a C) 



l c - COLLECTOR CURRENT (mA) 



6-114 



Turn On and Turn Off 
Times vs Collector Current 




fe- COLLECTOR CUBBEIIT (ma) 



Process 70 



Switching Times vs 
Collector Current 




l c - COLLECTOR CURRENT (niA) 



Maximum Power Dissipa- 
tion vs Ambient 
Temperature 




T A - AMBIENT TEMPERATURE TCI 

*One square inch of copper run 



Maximum Power Dissipa- 
tion vs Case Temperature 




T c - CASE TEMPERATURE (°C) 



'If 

-I0.»V l_| 



P.W. - 200 111 
RISE TIME ^ 2 nt 
DUTY CYCLE ■ » 




tl.IV j— I 

v|_/ 




2<|,<HKH 
t,<Si* 

DUTY CYCLE = 2% 



FIGURE 1. t on Equivalent Test Circuit FIGURE 2. t off Equivalent Test Circuit 



6-115 



(0 
CO 

a> 
o 
o 




National 
Semiconductor 




Process 71 PNP Small Signal 



DESCRIPTION 

Process 71 is a nonoverlay, double diffused, 
silicon device. Complement to Process 04. 



APPLICATION 

This device was designed for general purpose 
amplifier applications at collector currents to 
20 mA. 



PRINCIPAL DEVICE TYPES 



TO-18 
TO-92 



BC177 Series 
BC560 Series 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


NF (spot) 


l c = 200/iA, V C = 5V, R s = 2k, 
f = 1 kHz 




0.5 


2.50 


dB 




h fe 


l c = 10 mA, V CE = 5V, f = 100 MHz 


3 


5 










V CB = 10V 




4 


6 


pF 


TO-18 


c ib 


V EB = 0.50V 




8 


12 


pF 


TO-18 


h FE 


l c = 100 uA, V CE = 5V 


40 


140 


400 






n FE 


l c = 1 mA, V CE = 5V 


40 


140 


400 






h FE 


l c = 10 mA, V CE = 5V 


40 


130 








h FE 


l c = 20 mA, V CE = 5V 


40 


125 








VcE(SAT) 


l c = 1 mA, l B = 0.10 mA 




0.04 


0.10 


V 




V CE(SAT) 


l c = 10 mA, l B = 1 mA 




0.055 


0.11 


V 




V BE(SAT) 


l c = 1 mA, l B = 0.10 mA 




0.8 


0.95 


V 




Vbeisati 


l c = 10 mA, l B = 1 mA 




0.9 


1.0 


V 




BVceo 


l c = 1 mA 


40 


50 




V 




BV CBO 


l c = 100 uA 


40 






V 




BV EBO 


l E = 10/LiA 


5 


6 




V 




>CBO 


V CB =30V 






50 


nA 




'ebo 


V EB =3V 






50 


nA 

















6-116 



DC Pulse Current Gain 
vs Collector Current 





= 

















































































































































































































































































Base-Emitter On Voltage 
vs Collector Current 



cc 0.6 
1 











































- 


S I 


















































(10 






























































1 ll 





Maximum Power 
Dissipation vs 
Ambient Temperature 



Process 71 



Maximum Power 
Dissipation vs 
Ambient Temperature 




O 
O 
(D 

</> 
(0 



l c - COLLECTOR CURRENT 1mA) 



l c - COLLECTOR CURRENT OnA) 



T A - AMBIENT TEMPERATURE ( C) 



- AMBIENT TEMPERATURE ( C) 



Collector-Emitter 
Saturation Voltage vs 
Collector Current 



£ =• 0.16 

li 



1 1 ■■« 





/i 


























■ 






















I 




























































































































































• 







































































Capacitance vs Reverse 
Bias Voltage 



Collector-Base Diode 
Reverse Current vs 
Temperature 




l c - COLLECTOR CURRENT ImA) 



REVERSE BIAS VOLTAGE (V) 



25 50 75 TOO 125 
Tj - JUNCTION TEMPERATURE IX) 



Small Signal Current Gain 
vs Collector Current 



3 i 




l c - COLLECTOR CURRENT <mAt 



Small Signal Input 

Capacitance vs Reverse Noise Figure vs Source Resistance vs 

Bias Voltage Resistance Noise Figure vs Frequency Collector Current 




1.0 10 100 100 Ik 10k 0.01 0.1 1.0 10 100 01 1.0 10 zo 

I - FREQUENCY (MHD R s -SOURCE RESISTANCE ISil FREQUENCY [kHz) l c - COLLECTOR CURRENT ImA) 



Small Signal Output 
Conductance vs 
Collector Current 




1.0 10 20 

l c - COLLECTOR CURRENT ImA) 



Small Signal Current Gain 
vs Collector Current 



£ 50 



10 10 20 

l c - COLLECTOR CURRENT ImA) 



Small Signal Voltage 
Feedback Ratio vs 
Collector Current 




1.0 10 20 

1 C - COLLECTOR CURRENT ( m A) 



6-117 

. 



CO 

r» 

(0 
</> 
0> 

o 
o 



JOT National 

Jut Semiconductor 



ZZ2IZZ 



(0.203) 
0.036 



(0.966) 



.0055 0.036 
(0.139?) (Q~914) 



Process 73 PNP High Voltage 



DESCRIPTION 

Process 73 is nonoverlay doubled diffused, silicon 
epitaxial device. Complement to Process 08. 

APPLICATION 

This device was designed as a general purpose 
amplifier and switch for applications requiring 
high line voltages. 

PRINCIPAL DEVICE TYPES 



TO-39 
TO-92+ 



2N3634 
TN3634 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


BV C EO 


l c = 10mA 


105 


160 


180 


V 




BVcbo 


l c = 100 MA 


145 




250 


V 




bv E bo 


y = 10;i(A 


5 


7 




y 




ICBO 


V CB " 100V 






100 


nA 




Iebo 


V EB =3V 






50 


nA 




h FE 


l c =0.1 mA, V CE = 10V 


40 


80 








h FE 


l c = 1 mA, V CE = 10V 


45 


90 








h FE 


l c = 10 mA, V CE = 10V 


50 


100 








h FE 


l c = 50mA, V CE = 10V 


55 


135 


270 






VcEBAT! 


l c = 50 mA, l B = 5 mA 




0.15 


0.3 


V 




V BEISAT) 


l c = 50 mA, l 8 = 5 mA 




0.75 


0.9 






Cob 


V CB = 20V 




8 


10 


pF 




C IB 


V EB = 1.0V 




50 


75 


pF 




Ft 


l c = 30 mA, V CE = 30V, f = 100 MHz 


150 


225 




MHz 





6-118 



Process 73 



DC Pulse Current Gait 
us Collector Current 



S 160 



1 ■ 




















c 




































































N 








































































































































\ 





























l c - COLLECTOR CURRENT fmA) 



Base-Emitter On Voltage 
vs Collector Current 




l c - COLLECTOR CURRENT (mA} 



Maximum Power 
Dissipation vs 
Ambient Temperature 




T„ - AMBIENT TEMPERATURE ( CI 

*One square inch of copper run 



Maximum Power 
Dissipation vs 
Case Temperature 




50 100 ISO 

- CASE TEMPERATURE | C) 



Base-Emitter Saturation 
Voltage vs Collector Current 



Vbksaii - BASE-EMITTER 
SATURATION VOLTAGE (V) 


"lc 




- 












































*■ f 


- 






























































































01 1.0 10 100 10 



Collector-Emitter Saturation 
Voltage vs Collector Current 




l c - COLLECTOR CURRENT imAI 



l c - COLLECTOR CURRENT (mA) 



Collector-Emitter 
Breakdown Voltage With 
Resistance Between 
Emitter-Base 




Small Signal Current Gain 
vs Collector Current 




Input and Output 
Capacitance vs Reverse 
Bias Voltage 



r 


E 







i (, 


H.- 


































































































= 


















































































"c 











































RESISTANCE (hi!) 



I c - COLLECTOR CURRENT ImAI 



1 10 100 

REVERSE BIAS VOLTAGE (V) 



6-119 



DESCRIPTION 




Process 74 is nonoverlay double diffused, silicon 
epitaxial device. Complement to Process 16. 



APPLICATION 

This device was designed as a general purpose 
amplifier and switch for applications requiring 
high line voltages 

PRINCIPAL DEVICE TYPES 

TO-92 2N 5401, MPSL51 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


NOTES 


BVceo 


l c = 1 mA 


105 


170 


210 


V 




BV CB0 


l c = 100 nA 


150 




275 


V 




bv EB o 


l E = 10mA 


6 










'CBO 


V CB = 100 V 






100 


nA 




!ebo 


V EB =3V 






50 


nA 






l c = 1 mA, V CE = 5V 


30 


60 








h FE 


l c m 10 mA, V CE = 5V 


40 


150 


240 






h PE 


l c = 50 mA, V CE = 5V 


40 


60 








VCEISAT) 


l c = 50 mA, l B = 5 mA 




0.18 


0.25 






Vbeisati 


l c = 50 mA, l B = 5 mA 




0.77 


1.0 






Cob 


V CB = 10V 




8 


12 


pF 




h 


l c = 10 mA, V CE = 10V, f = 100 MHz 


100 


160 


300 


MHz 





6-120 




Maximum Power Dissipation 

vs Case Temperature Base-Emitter Saturation Collector-Emitter Saturation 

TO-92 Voltage vs Collector Current Voltage vs Collector Current 





6-121 




National 
Semiconductor 




Process 77 PNP Medium Power 



DESCRIPTION 

Process 77 is a double diffused silicon epitaxial 
planar device. Complement to Process 37. 

APPLICATION 

This device was designed for general purpose 
medium power amplifier and switching circuits 
that require collector currents to 1A. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BV CEO 


l c = 10mA 


25 




45 


V 


BV CBO 


l c = 100uA 


40 






V 


BV EBO 


l E = 100/uA 


5 


7 




V 


'cBO 


V CB = BV CEO 




50 


500 


nA 


'ebo 


V EB = 5V 




0.1 


100 


«A 


h FE 


l c = 500 mA, V CE = 1V 


50 




250 




V CE(SAT) 


l c = 1A. I B - 0.1A 




0.3 


0.5 


V 


V BE(SAT) 


l c = 1A, l B = 0.1A 




1.0 


1.5 


V 


*T 


l c = 100 mA, V CE - 10V 




200 




MHz 


C OBO 


V CB - 10V 






20 


pF 



PRINCIPAL DEVICE TYPES 

TO-202 (Package 35) 92 PLUS (Package 91 ) 



NSD202 
NSD203 
NSDU51 
NSDU51A 

TO-202 (Package 36) 

D43C1 
D43C2 
D43C3 
D43C4 
D43C5 
D43C6 
NSE170 

92 PLUS (Package 90) 

92PE77A 
BD372A 



92PU51 

92PU51A 

BD370A 

TO-126 (Package 38) 

BD136 



Power Dissipation vs Case 



1 


Temperature TO-126 


HUM POWER DISSIPATION (mWI 


IUM POWER DISSIPATION (A 










































































































































































s 














































* 210 










i 












t j ' 


I . 


2f> so ?s in us i 



Maximum Power Dissipation 
vs Ambient Temperature 




T A - AMBIENT TEMPERATURE I 

One square inch of copper run 



6-122 




Co I lector- Emitter 
Saturation Voltage 
vs Collector Current 




10 100 Ik 

l c - COLLECTOR CURRENT tmA> 



Gain Bandwidth 
Product vs Collector 
Current 




n mo 

l c - COLLECTOR CURRENT (mA) 



Co I lector -Base Capacitance 
vs Col lector -Base Voltage 



5 
3 

J 



V„ - COLLECTOR-BASE VOLTAGE IV) 





National 
Semiconductor 



Process 78 PNP Medium Power 




DESCRIPTION 

Process 78 is a double diffused silicon epitaxial 
planar device complement to Process 38. 

APPLICATION 

This device was designed for general purpose 
medium power amplifier and switching circuits 
that require collector currents to 1A. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVceo 


l c » 10 mA 


45 




80 


V 


BV CBO 


l c • 100mA 


75 




110 


V 


BV EBC 


\\ = 100(iA 


5 


7 




V 


'CBO 


V CB ■ BV CEO 




50 


500 


nA 


'ebo 


V EB =5V 




0.1 


100 


MA 


h F E 


l c f 100 mA, V CE - 1V 


50 




250 




V CE(SAT) 


l c = 500 mA, l B - 50 mA 




0.2 ' 


0.5 


V 


V BE(SAT) 


l c = 500 mA, l B = 50 mA 




0.95 


1.4 


V 


fj 


l c = 100 mA, V CE = 10V 


50 






MHz 


Cqbo 


V CB = 10V 






15 


pF 



PRINCIPAL DEVICE TYPES 

TO-202 (Package 35) TO 126 (Package 38) 

NSDU55 BD138 

NSD6180 

NSD6181 



TO-202 (Package 36) 

D43C7 
D43C8 
D43C9 
NSE171 



92 PLUS (Package 90) 

92PE77B 
BD372B 
BD372C 

92 PLUS (Package 91) 

92PU55 
BD370B 
BD370C 



6-124 




Process 78 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




Base-Emitter 'ON" 
Voltage vs Collector 
Current 









V CE - 10V j-40 C).J 










v CE = iov Bitter 

V ee MOV (125 CI 1 ' 




v, 






































E =1V 125 C) 









































































































Base-Emitter 
Saturation Voltage 
vs Collector Current 




! c - COLLECTOR CURRENT (roA) 



l c - COLLECTOR CURRENT imAI 



l c ■ COLLECTOR CURRENT (mA) 



Co I lector- Emitter 
Saturation Voltage 
vs Collector Current 




Gain Bandwidth 
Product vs Collector 
Current 




Collector-Base Capacitance 
vs Collector-Base Voltage 



l c -COLLECTOR CURRENT ImAI 



t c - COLLECTOR CURRENT ImA) 



J ' 



V ce - COLLECTOR-BASE VOLTAGE (VI 



Safe Operating Area 
TO-202 




Maximum Power Dissipation 
vs Ambient Temperature 































































ras 


















































































_ 






























aft- 








F 































2S 50 75 



V CE - COLLECTOR EMITTER VOLTAGE IV) 



6-125 




National 
Semiconductor 



0.031 
10.717) 




Process 79 PNP Medium Power 

DESCRIPTION 

Process 79 is a double diffused silicon epitaxial 
planar device complement to Process 39. 

APPLICATION 

This device was designed for general purpose 
medium power amplifier and switching circuits 
that require collector currents to 1 A. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVceo 




l c = 10 mA 


80 




110 


V 


BV CBO 




l c = 100 /J A 


110 




140 


V 


BV EBO 




l E = 100 uA 


5 


7 




V 


'CBO 




V CB = BV CEO 




50 


500 


nA 


'ebo 




V EB = 5V 




0.1 


100 


MA 


h FE 




l c = 100 mA, V CE = IV 


25 




150 




V CE(SAT> 




l c = 500 mA, l B = 50 mA 




0.2 


0.5 


V 


V BE (SAT) 




l c - 500 mA, l B = 50 mA 




0.9 


1.4 


V 


»T 




l c = 100 mA, V CE = 10V 


50 


120 




MHz 


CoBO 




V CB = 10V 






15 


pF 



PRINCIPAL DEVICE TYPES 

TO-202 (Package 35) 

NSD204 
NSD205 
NSD206 
NSDU56 
NSDU57 

92 PLUS (Package 90) 

92PE77C 
BD372D 

92 PLUS (Package 91) 

92PU56 
92PU57 
BD370D 

TO-126 (Package 38) 

BD140 

6-126 



Power Dissipation vs Case 
« Temperature TO-126 




m , . 

| IS SO IS 100 125 ISO 
* T C - CASE TEMPERATURE CCI 



Maximum Power Dissipation 
vs Ambient Temperature 

— ,6D0 I — I — I — 1 — I — I — I — I — 
1 uoo 




T A - AMBIENT TEMPERATURE i d 



*One square inch of copper run 




Collector-Emitter 
Saturation Voltage 
vs Collector Current 




Gain Bandwidth 
Product vs Collector 
Current 




Collector-Base Capacitance 
vs Collector-Base Voltage 



l c - COLLECTOR CURRENT (mA( 



l c - COLLECTOR CURRENT ImAI 



V CB - COLLECTOR BASE VOLTAGE (V) 



Maximum Power Dissipation 
Safe Operating Area vs Ambient Temperature 

TO-202 (TO-202) 




ansistors 




National 
Semiconductor 




Process 2C/4F NPN Epitaxial Power 



DESCRIPTION 

Process 2C/4F is a double epitaxial silicon mesa 
with diffused emitter. 

APPLICATION 

This device was designed for general purpose 
power amplifier and switching circuits where a 
large safe operating area is required. 



D A D A fYTt tTTD 


1 Cb 1 LUNUI 1 lUIMi 










BV CEO 


l c = 100 mA, (Note 1) 


30 




100 


V 


BV CBO 


l c = 1 mA 


60 




200 


V 


BV EBO 


l E e 1mA 


5 


8 




V 


'ceo 


V CE - BV CEO - 10V 






300 


mA 


'cBO 


Vcb " BV CEO 




0.1 


10 


«A 


'ebo 


V EB j- 5V 




10 


100 


//A 


h FE 


l c » 1.0A. V CE = 1V, (Note 1) 


15 




200 




V CE<SAT) 


l c • 2.0A, l B = 0.3A. (Note 1) 






0.5 


V 


V BE(ON) 


l E = 2.0A. V CE = 2.0V, (Note 1) 






1.0 


V 


SOA 


TO 220, V CE = 25V t = 1 sec 


1.6 






A 


SOA 


TO 126, V CE = 33.3V, t = 1 sec 


0.9 






A 


SOA 


TO 202, V CE - 30V, t= 1 sec 


0.4 






A 


*T 


l c = 0.5A, V CE = 2V 


4 






MHz 


«d 
t, 


lc = 1A. I B , • l B2 =0.1A. 
V cc - 40V 

k '* 1 A, l B1 - l B2 «0.1A, 
V cc = 40V 




0.05 

0.25 




IB 


t, 


lc - US Ibi • l B2 =0.1A. 
V cc * <0V 




0.75 




0S 


t< 


lc * 1A, l B1 - l B2 -0.1 A, 
V cc " 40V 




0.25 




*8 


Pd(maxi 


TO-220 
TO-126 
TO-202 


40 

30 
12.5 






W 
W 
W 




TO 220 
TO-126 
TO202 






3.125 
4.167 
10.0 


°C/W 
°C/W 

°c/w 



Note 1 : Pulsed measurement = 300ms pulse width. 



PRINCIPAL DEVICE TYPES 

TO-220 (Package 37) TO-126 (Package 38) 

DC44C1 NSP520 TIP29B TIP61A 2N4921 

DC44C2 NSP521 TIP29C TIP61B 2N4922 

DC44C4 NSP4921 TIP31 TIP61C 2IM4923 

DC44C5 NSP4922 TIP31A MJE520 

DC44C7 NSP4923 TIP31B MJE521 

DC44C8 TIP29 TIP31C 

DC44C10 TIP29A TIP61 



7-2 



Process 2C/4F 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




o.i i 3 ia 

I- - COLLECTOR CURRENT (AMPS) 



Base-Emitter "ON" 
Voltage vs Collector 
Current 




0.1 1 3 10 

l c - COLLECTOR CURRENT (AMPS) 



Base-Emitter Saturation 
Voltage vs Collector 
Current 




0.1 1 1 10 

c - COLLECTOR CURRENT (AMPS) 



Collector-Emitter 
Saturation Voltage 
vs Collector Current 




II D.1 1 3 10 

l c - COLLECTOR CURRENT (AMPS) 



Gain Bandwidth 
Product vs Collector 
Current 




02 1 
l c - COLLECTOR CURRENT (AMPS) 



Co (lector- Base Capacitance 
vs Collector-Base Voltage 



J ' 



V M - COLLECTOR 0ASE VOLTAGE IV) 



Safe Operating Area 
TO-220 




1 5 10 20 50 100 

V CE - COLLECTOR EMITTER VOLTAGE IV) 



Safe Operating Area 
TO-126 




1 5 10 20 50 100 

V ci - COLLECTOR EMITTER VOLTACE (V) 



Safe Operating Area 
TO-202 




12 5 10 20 SO 100 

R EMITTER VOLTACE (VI 



Vet - COLLECTOR E 



Maximum Power 
Dissipation vs Case 
Temperature 




T c -CASE TEMPERATURE I'C) 



Switching Circuit 



in. 



OUTV CYCLE ■ 1.05* 
PWMS-lOus 

GENERATOR HPI900A 



_L _1_ CI = 5 mFd 3 



le ■ 1 A 

• ioo'Ia 



X 



73 




National Process 2E/4E NPN Epitaxial Power 

Semiconductor 




DESCRIPTION 

Process 2E/4E is a double epitaxial silicon mesa 
with diffused emitter. 

APPLICATION 

This device was designed for general purpose 
power amplifier and switching circuits where a 
large safe operation area is required. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


UV CEO 


1 — inn rr. A IMnto 1 t 

\q — iuu mA, (Note j j 




30 


60 


1 00 


y 


BV CBO 


l c = 1 mA 




50 




200 


V 


BV EBO 


l E = 1mA 




5 


8 




V 


'ceo 


V CE - BV ceo - 10V 






50 


300 


*lA 


'cBO 








10 


too 


fA 


'ebo 


V EB = 5V 






50 


1000 


KA 


h FE 


l c = 1.5A, V CE « 20V, (Note 1) 




20 




200 




V CEISATI 


Iq = 4.UA, l B — U.DA, U^Ote 1 1 








0.6 


V 


Vbeion) 


l c =4.0A, V CE = 2.0V, (Note 1) 








1.3 


V 


SOA 


TO-220, V CE = 33.3V. t = 1 sec 




1.5 






A 


SOA 


TO- 126, V CE = 33.3V, t = 1 sec 




1.2 






A 


SOA 


TO 202. V CE = 30V, t = 1 sec 




0.5 






A 


fx 


l c =0.5A, V CE = 2V, f = 1 MHz 




4 






MHz 


»d 
t r 


l c = 1.0A, l B1 = 0.1A, l B2 = 0.1A, 
V CC " 30V 

l c - 1.0A, l B1 =0.1 A, l B2 =0.1A, 
V cc " 30V 






0.10 

0.25 




lis 
US 


<S 


l c = 1.0A, l B , =0.1 A, l B2 =0.1 A, 
V cc = 30V 






0.35 




MS 


t, 


ic = 1.0A, l B1 =0.1 A, l B2 =0.1 A, 
V cc " 30V 






0.23 






P D(MAX) 


TO-220 
TO-126 
TO-202 




50 
40 
15 






w 
w 
w 




TO-220 
TO-126 
TO-202 








2.5 

3.125 

8.33 


°c/w 
°c/w 
°c/w 



Note 1: Pulsed measurement = 300ms pulse width 

PRINCIPAL DEVICE TYPES 

TO-220 (Package 37) 

2N5293 2N5298 2N6130 2N6291 D44C9 

2N5294 2N6121 2N6131 2N6292 D44C11 

2N5295 2N6122 2N6288 2N6293 D44C12 NSP5190 2N5192 

2N5296 2N6123 2N6289 D44C3 NSP41 NSP5192 

2N5297 2N6129 2N6290 D44C6 



TO-126 (Package 38) 

NSP41B 2N5190 
NSP41C 2N5191 



N.SP41 A NSP5193 



7-4 



Process 2E/4E 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




I 1.1 IIS 

If COLLECTOR CURRENT (AMPS) 



Base-Emitter "ON" 
Voltage vs Collector 
Current 




Base-Emitter Saturation 
Voltage vs Collector 
Current 




l c - COLLECTOR CURRENT (AMPS) 



l c - COLIECTOR CURRENT (AMPS) 



Col lector -Emitter 
Saturation Voltage 
vs Collector Current 




Gain Bandwidth 
Product vs Collector 
Current 




COLLECTOR CURRENT (AMPS I 



0.01 1 2 

■ COLLECTOR CURRENT IA 



Typical Collector 
Capacitance vs Collector- 




V ca - COLLECTOR BASE VOLTAGE (1 



Safe Operating Area 
TO-220 




II S 10 20 SO 100 
V CE - COLLECTOR EMITTER VOLTAGE 'VI 



Safe Operating Area 
TO-126 




2 S 10 20 SO 100 

- COLLECTOR EMITTER VOLTAGE (V) 



Safe Operating Area 
TO-202 




1 2 5 10 20 50 100 

V CE - COLLECTOR EMITTER VOLTAGE (V) 



Maximum Power 
Dissipation vs Case 

Temperature Switching Circuit 




7 5 



National 
JSji Semiconductor 




Process 2 J/4 J 

NPN Power Darlington 



DESCRIPTION 

Process 2J/4J is a double epitaxial silicon mesa 
device. Complement to Process 3J/5J. 

APPLICATION 

This device was designed for use in driver and 
output stages of complementary audio amplifier 
circuits. It is also well suited for solenoid driver 
applications. 



PARAMETER 


Tfcal LUIMD1 I lUIMa 


MIIM 


TYP 


MAX 


UNITS 


BV CEO 


l c = 100 mA 


30 




100 


V 


BV CBO 


l c = 100/jA 


50 




120 


V 


BV EBO 


l E =2mA 


5 






V 


'ceo 


V CE - 1/2BV CEO 






0.5 


mA 


'cBO 


V CB " BV CE0 






200 


HA 


'ebo 


V EB - 5V 






2.0 


mA 


h FE 


l c * 2A, V CE = 3V 


500 




15,000 




^CE(SAT) 


l c = 5A, l B = 2.0 mA 






3.0 


V 


Vbeioni 


l c - 5A, V CE = 3V 






2.5 


V 


C OBO 


V CB * 10V 




30 




pF 


|h FE l 


l c = 1A, V CE = 3V, f = 1 MHz 




9 




MHz 


*ON 


l c = 6A, V CE = 30V, (Figure 1) 




1.25 




ft 


'off 


l c = 6A, V CE - 30V, (Figure 1} 




2.75 




IIS 


SOA 


TO-220, V CE = 33V, t = 1 sec 


1.5 






A 


SOA 


TO- 126, V CE =33V, t= 1 sec 


1.2 






A 


Pd(max) 


TO-220 


50 






W 


Pd(max) 


TO-126 


40 






W 




TO-220 






2.5 


°c/w 




TO-126 






3 125 


°c/w 



PRINCIPAL DEVICE TYPES 



TO-220 (Package 37) 
2N6386 NSP2101 
TIP110 NSP2102 
TIP111 NSP2103 
TIP112 
NSP2100 



TO-126 (Package 38) 
2N6037 MJE802 



2N6038 
2N6039 
MJE800 
MJE801 



MJE803 



7-6 



Process 2J/4J 




Col lector- Emitter 

Saturation Voltage Safe Operating Area Safe Operating Area 

vs Collector Current TO-126 TO-220 




l c - COLLECTOR CURRENT (AMPS) "cs - COLLECTOR EMITTER VOLTAGE IV) V CE - COLLECTOR EMITTER VOLTAGE (V) 



Maximum Power 

Dissipation vs Case Switching Times vs 

Temperature Collector Current 




T c - CASE TEMPERATURE I C] l c - COLLECTOR CURRENT (AMPS) 



V cc ■ 35V 

o 



TTl. 



f 



GENERATOR ■ HP19DQA 
DUTY CVCLE ■ 1* 
PULSE WIDTH ■ 5-1 M 

l c = 6A 

l B i. Ibi " 4 mA 



>B0 >R„. 



J 



I 



FIGURE 1 



DESCRIPTION 




Process 3C/5F is a double epitaxial silicon mesa 
with diffused emitter. 

APPLICATION 

This device was designed for general purpose 
power amplifier and switching circuits where a 
large safe operating area is required. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


IC = 100 mA 


30 




100 


V 


BVcBO 


IC = 1 mA 


50 




150 


V 


BVEBO 


l E = 1 mA 


5 


6.5 




V 


ICEO 


VCE = BV C EO-10V 




10 


300 


ma 


ICBO 


VCB - BVCEO 




0.1 


10 


M A 


^BO 


V EB = 5V 




10 


100 


ma 


hcc 
"rb 


Ir = 1 OA Vrc = 1 0V 


10 




120 




VCE(SAT) 


IC Z.Uf\, IB _ U.JA 






0.5 


V 


VBE(ON) 


IC = 2.0A, Vce " 2.0V 






1.1 


V 


SOA 


TO-220, Vce = 25V, t = 1 sec 


1.6 






A 


SOA 


TO-126, Vce - 33.3V, t - 1 sec 


0.9 






A 


SOA 


TO-202, Vce = 33.3V, t- 1 see 


0.375 






A 


ft 


l C = 0.5A, V CE = 2V 


4 






MHz 


td 






0.03 




MS 


tr 


IC = 1A. I B 1 T lB2 = 0.1A 




0.20 




MS 


ts 


V CC = 40V 




0.26 




MS 


tf 






0.20 




MS 


PD 


TO-220 






40 


W 




TO-126 






30 


W 




TO-202 






12.5 


W 




TO-220 






3.125 


°C/W 




TO 126 






4.167 


°C/W 




TO-202 






10.0 


°c/w 



Note 1 : Pulsed measurement B 300ms pulse width. 

PRINCIPAL DEVICE TYPES 

TO-220 (Package 37) 

D45C1 D45C7 NSP370 TIP30 
D45C2 D45C8 NSP4918 TIP30A 
D45C4 D45C10 NSP4919 TIP30B 



TO-126 (Package 38) 



TIP32 TIP62 2N4918 
TIP32A TIP62A 2N4919 
TIP62B 



TIP32B 



2N4920 



D45C5 D45C11 NSP4920 TIP30C TIP32C TIP62C MJE370 

7-8 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




l c - COLLECTOR CURRENT !AMPSI 



Collector-Emitter 
Saturation Voltage 
vs Collector Current 




0.1 13 5 

l c - COLLECTOR CURRENT (AMPS) 



Safe Operating Area 
TO-220 




1 5 ID 20 50 ICO 

V CE - COLLECTOR EMITTER VOLTAGE (V) 



Maximum Power 
Dissipation vs 
Case Temperature 




T c - CASE TEMPERATURE I C) 



Base-Emitter "ON" 
Voltage vs Collector 
Current 




0.1 13 5 

- COLLECTOR CURRENT IAMP5) 



Gain Bandwidth 
Product vs 
Collector Current 




l c - COLLECTOR CURRENT lAMPSl 



Safe Operating Area 
TO- 126 




1 5 10 20 50 (00 

V ce - COLLECTOR EMITTER VOLTAGE (V) 



Process 3C/5F 



Base- Emitter 
Saturation Voltage 
vs Collector Current 




l c - COLLECTOR CURRENT (AMPS) 



Typical Collector Capacitance 
vs Collector-Base Voltage 




§ • 



V ca - COl LECTOR BASE VOLTAGE (V) 



Safe Operating Area 
TO-202 




T 2 5 10 20 50 100 

V CE - COLLECTOR EMITTER VOLTAGE (V) 



Switching Circuit 



,v "L_r 

-isv I— I 



DUTY CYCLE • 1.0% 
PW = 5-10*. 

GENERATOR ■ HP19WA 




- T 



o 
o 
o 

(/) 

« 

w 
O 

01 

n 



LU 

w 

— 

LU 

CO 

Ui 
V) 

o 
o 
o 



National 
iyj Semiconductor 




Process 3E/5E PNP Epitaxial Power 



DESCRIPTION 

Process 3E/5E is a double epitaxial silicon mesa 
with diffused emitter. 

APPLICATION 

This device was designed for general purpose 
power amplifier and switching circuits where a 
large safe operation area is required. 



HAHAMfc 1 cn 


tect rnMniTinmc 
1 t o 1 UUIMUI 1 lUIMo 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


l c = 100 mA, (Note 1) 


30 


60 


100 


V 


av CB0 


l c = 1 mA 


40 




150 


V 


BV EBO 


l E = 1 mA 


5 


8 




V 


'ceo 


V CE = BV CEO 




50 


300 


MA 


'CBO 


V CB = BV CE0 




10 


1 00 


ma 


'ebo 


V EB = 5V 




50 


1000 


ma 


"FE 


l c = 1.5A, V CE = 2.0V, (Note 11 


20 




170 




VCE(SAT) 


l C = 1.0A. IB = 0.6A, (Note 1) 






0.65 


V 


VBE(ON) 


l C = 4.0A, V C E - 2.0V, (Note 1) 






1.3 


V 


SOA 


TO-220, Vce = 33.3V, t= 1 sec 


1.5 






A 


SOA 


TO-126, Vce = 33.3V, t= 1 sec 


1.2 






A 


SOA 


TO-202, Vce = 33.3V, t - 1 sec 


0.46 






A 


ft 


l C = 0.5A, V C E = 2V, f = 1 MHz 


4 






MHz 


td 


IC = 10A, Ibi - 0.1 A, l B 2 = 0.1 A, 

vce = 3ov 




0.10 




MS 


tr 


IC=10A, l B 1 =0.1A, l B 2 = 0.1A, 

v C e = 30v 




0.25 




fjs 


ts 


l C = 1.0A, l B 1 = 0.1 A, l B 2 = OTA, 
V C E = 30V 




0.40 




MS 


tf 


l C = 10A, l B 1 =0.1A, l B 2 = 0.1A, 
V C E " 30V 




0.23 




MS 


P D(MAX) 


TO-220 
TO-126 
TO-202 






50 
40 
15 


W 
W 
W 


6jc 


TO-220 






2.5 


°c/w 


TO-126 
TO-202 






3.125 
8.33 


°c/w 

°CAV 



Note 1: Pulsed measurement = 300ms pulse width 

PRINCIPAL DEVICE TYPES 

TO-220 (Package 37) 

2N6106 2N6124 D45C3 NSP42B 

2N6107 2N6125 D45C6 NSP42C 

2N6108 2N6126 D45C9 NSP371 

2N6109 2N6132 D45C12 NSP5193 MJE371 

2N6110 2N6133 NSP42 IMSP5194 

2N6111 2N6134 NSP42A NSP5195 



TO-126 (Package 38) 

2N5193 
2N5194 
2N5195 




7-10 




Collector -Emitter 
Saturation Voltage 
vs Collector Current 




Gain Bandwidth 
Product vs Collector 
Current 




_LM 



Ic - COLLECTOR CURRENT (AMPS) 



0.1 1 2 

l c - COLLECTOR CURRENT (AMPS) 



Collector-Base Capacitance 
vs Co I lector -Base Voltage 



I 

S 100 



- COLLECTOR BASE VOLTAGE (V) 



Safe Operating Area 
TO-220 



5 05 




12 5 10 20 SO 100 
V« - COLLECTOR EMITTER VOLTAGE (VI 



Safe Operating Area 
TO-126 




I S 10 10 SO ISO 
- COl LECTOR-EMITTER VOLTAGE (V) 



Safe Operating Area 
TO-202 




1 l S 10 20 SO 100 

V CE - COLLECTOR EMITTER VOLTAGE IV) 



Maximum Power 
Dissipation vs Case 
Temperature 




Switching Circuit 



0V 1_J 

-15V 



DUTY CYCLE ■ 1.0% 
PW' S 10m 
GENEHATGR = HP1900A 




T C -CASE TEMPERATURE 1 



7-11 




National 
Semiconductor 




Process 3J/5J 

PNP Power Darlington 



DESCRIPTION 

Process 3J/5J is a double epitaxial silicon mesa 
device. Complement to Process 2J/4J. 

APPLICATION 

This device was designed for use in driver and 
output stages of complementary audio amplifier 
circuits. It is also well suited for solenoid driver 
applications. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BV CEO 


l c = 100 mA 


30 




100 


V 


BV CBO 


l c = 100/jA 


50 




120 


V 


BV EBO 


l E ■ 2 mA 


5 






V 


'ceo 


V CE ' 1/2BV CEO 






0.5 


mA 


'cBO 


V CB = BV CEO 






200 


MA 


'ebo 


V EB = 5V 






2.0 


mA 


h FE 


l c = 2A, V CE = 3V 


500 








VcE(SAT) 


l c = 5A, l B = 2.0 mA 






3.3 


V 


Vbeioni 


l c = 5A, V CE =3V 






2.8 


V 


CoBO 


V CB f 10V 




35 




pF 


foi 


l c = 1A, V CE - 3V, f = 1 MHz 




4 ,. 






'on 


l c = 6A. V CE = 30V, (Figure 1) 




2.0 






'off 


i c = 6A. V CE = 30V, (Figure 1) 




2.6 






Pd(max) 


TO-220 


50 






W 


Pd(M AX) 


TO-126 


40 






W 


Sic 


TO-220 






2.5 


°c/w 


0,c 


TO 126 






3.125 


°c/w 



PRINCIPAL DEVICE TYPES 



TO-126 (Package 38) 

2N6034 
2N6035 
2N6036 
MJE700 
MJE701 
MJE702 
MJE703 



TO-220 (Package 37) 

TIP115 

TIP116 

TIP1 17 

NSP2090 

NSP2091 

NSP2092 

NSP2093 



7-12 



Process 3J/5J 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




0.6 1 S 10 

l c - COLLECTOR CURRENT (A) 



Base Emitter "ON" 
Voltiige vs Collector 
Currant 



Base-Emitter 
Saturation Voltage 
vs Collector Current 



Collector-Emitter 
Saturation Voltage 
vs Collector Current 




0.5 1 5 10 

l c - COLLECTOR CURRENT (A| 




Safe Operating Area 
TO-126 



0.5 1 5 10 

l c -COLLECTOR CURRENT !A1 



Safe Operating Area 
TO-220 


















































































































































































































- 












— 




















t 


IM 


T DETERMINED 1 












1 





COLLECTOR EMITTER VOLTAGE (VI 



V CE - COLLECTOR EMITTER VOLTAGE (V) 



Maximum Power 
Dissipation vs Case 
Temperature 



Switching Times vs 
Collector Current 





25 SO 75 100 125 ISO 
T c - CASE TEMPERATURE ("£) 



0.1 02 OS 1 2 S 10 
l c - COLLECTOR CURRENT (AMPS) 



V M = 35V 

o 



v — 1 1 



GENERATOR ■ H PI 900 A 
DUTY CYCLE = IS 
PULSE WIDTH ■ 5-tOus 



R a = 910 1 

-t-vw< 1 — r 

<S» >H„-1 Ski 

III— — 



— — J 



T 



Figure 1. 



7-13 




National 
Semiconductor 



Process 4A Epitaxial Power 



EM 



0. CD 



DESCRIPTION 

Process 4A is a double epitaxial silicon NPN mesa 
device with diffused emitter. 

APPLICATION 

This device was designed for general purpose 
power amplifier and switching circuits where a 
large safe operating area is required. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BV CEO 


l c = 200 mA, (Note 1) 


40 




100 


V 


BV ceo 


l c ■ 1 mA 


60 






V 


Dv EBO 


l E = 0.5 mA 


5 


7 




v 


'ceo 


Vrc = BVrcn - 10V 
*Ct w " CEO i«v 




10 


200 


MA 


'cBO 


V^n = BVr-co + 20V 
CB CEO 




1 


20 


uA 


1, 

'EBO 


V EB ° v 




1 


500 


LlA 


"FE 


i_ = 2 5 A = 2V 


20 




160 




V CE(SAT) 


l c = 4A, l B = 0.4 A 




0.4 


0.6 


V 


V BE(ON) 


l c = 5A, V CE =2V 




1.1 


1.3 


V 


SOA 


TO-3, l c = 3 A, t = 1 sec 


30 






V 


SOA 


TO-220, l c = 2 A, t = 1 sec 


30 






V 


ft 


l c = 0.5 A, V CE = 5V,f= 1 MHz 


2 


3 






u 


l c = 5 A, l B1 - l B2 = 0.5 A 
V cc = 40V 




0.07 




MS 


tr 


l c = 5 A, l 81 = l B2 =0.5 A, 
V cc = 40V 




0.8 




MS 


*. 


l c = 5 A. I B , = l B2 = 5 A. 
V cc = 40V 




0.4 




MS 


tf 


l c = 5 A, l B1 = l B2 =0.5 A, 
V cc ■ 40V 




0.5 




Ms 


Pdimaxi 


TO-3 


115 






W 


Pd(max) 


TO-220 


60 






W 




TO-3 






1.52 


°CAV 




TO 220 






2.08 


°c/w 



Note 1 : Pulsed measurement » 300 us pulse width 

PRINCIPAL DEVICE TYPES 

TO-220 (Package 37) 
NSP5977 NSP2021 
NSP5978 NSP205 
NSP5979 NSP3055 
NSP2020 2N6098. 2N6099 



2N6102, 2N6103 D44H1 

2N6100, 2N6101 D44H2 

2N6486 D44H4 

2N6487 D44H5 



D44H7 NSP2480 

D44H8 NSP2481 

D44H10 NSP2482 

D44H11 NSP2483 



TO-3 (Package 98) 

2N3055 2N5067 
2N4913 2N5068 
2N4914 2N5069 
2N4915 2N6569 



MJ2801 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




0.01 0.1 1 10 

l c - COLLECTOR CURRENT (A) 



Base-Emitter "ON" 
Voltage vs Collector 
Current 




0.01 0.1 1 10 

I c - COLLECTOR CURRENT (A) 



Safe Operating Area TO-3 




V CE - COLLECTOR EMITTER VOLTAGE (V) 



Col lector- Emitter 
Saturation Voltage 
vs Collector Current 




0.01 0.1 1 10 

l c - COLLECTOR CURRENT (A) 



Gain Bandwidth Product 
vs Collector Current 























i 


1 

= 


II 

V 

















































































































































0.1 0.5 1 3 10 

l c - COLLECTOR CURRENT (A) 



Safe Operating Area TO-220 




1 6 10 50 100 

V CE - COLLECTOR-EMITTER VOLTAGE (V) 



Process 4A 



Base-Emitter Saturation 
Voltage vs Collector 
Current 




l c - COLLECTOR CURRENT (A} 



Junction Capacitance 
vs Reverse Bias Voltage 




2 10 20 100 

V R - REVERSE BIAS VOLTAGE (V) 



Maximum Power 
Dissipation vs Case 
Temperature 




40 80 120 160 200 
T c -CASE TEMPERATURE (C) 



O 
O 
<t> 
</> 
W 

> 



CD 1 

fZn National Process 4B NPN 

8 £M Semiconductor Epitaxial Power 

0) 



o 




DESCRIPTION 

Process 4B is a double epitaxial silicon mesa transistor 
with diffused emitter. 

APPLICATION 

This device was designed for general purpose amplifier 
and switching circuits where a large safe operating area 
is required. 



PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


IC = 200 mA 


60 


80 


150 


V 


BVCBO 


IC = 500 uA 


60 






V 


bv E bo 


l£ = 100 uA 


5 


7 




V 


ICEO 


V C E = 30V 






1 


mA 


ICEX 


V C E = 60V, V B E = -1.5V 






0.5 


mA 


ICBO 


V CB = 60V 






0.5 


mA 


iebo 


V E B = 5V 






1 


mA 


hfe 


iq= 1A. V C E = 2V 


25 








hfe 


l C = 3A,V C E = 2V 


15 




100 




hfe 


IC = 8A, V C E * 4V 


5 








VCE(SAT) 


IC = 5A, l B = 0.5A 






1 


V 


VCE(SAT) 


l C = 8A, l B = 16A 






3 


V 


VBE(SAT) 


IC = 5A, Ib = 0.5A 






1.6 


V 


VBE(ON) 


l C = 3A, V C E = 2V 






1.5 


V 


Cobo 


V C B= 10V 






300 


pF 


ft 


IC = 0.5A, V C E = 10V, f = 1 MHz 


4 






MHz 


SOA 


TO-3 V C E = 45V t = 1 sec 


3.3 






A 


SOA 


TO-220, V C E = 45V, t = 1 sec 


1.55 






A 


PD(MAX) 


TO-3 


150 






W 


p D(MAX) 


TO-220 


70 






W 


»jc 


TO-3 






1.16 


°c/w 


°jc 


TO-220 






1.78 


°c/w 



PRINCIPAL DEVICE TYPES 

TO-3 

2N3713 2N5758 2N5877 

2N3714 2N5759 2N5878 

2N3715 2N5760 MJ2840 

2N3716 MJ2841 

7-16 




Base-Emitter ON Voltage vs Junction Capacitance vs Maximum Power Dissipation 

Collector Current Reverse Bias Voltage _ vs Case Temperature 




0.01 0.1 1 10 0-1 1 1G 100 ° 40 B0 120 160 200 

I C - COLLECTOR CURRENT (A) Vr " REVERSE BIAS VOLTAGE (V) T c - CASE TEMPERATURE ( C) 





PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


IC = 200 mA 


60 


80 


150 


V 


BVCBO 


IC = 500 fib. 


60 




100 


V 


BVEBO 


l E = 100 jiA 


5 






V 


ICEX 


V CE = 60V, V B E = -1.5V 






0.5 


mA 


ICBO 


V CB = 60V 






0.5 


mA 


lEBO 


V E B = 5V 






1.0 


mA 


HFE 


IC = 2A, VcE = 4V 


35 








hfe 


IC = 6A, VcE = 4V 


20 




100 




hfe 


l C = 12A, V C E = 4V 


5 








VCE(SAT) 


l C = 7A. I B = 0.7A 






1 


V 


VCE(SAT) 


IC= 12A, 1b = 2.4A 






4 


V 


VBE(SAT) 


IC = 7A, l B = 0.7A 






1.6 


V 


VBE(ON) 


IC= 12A, V CE = 4V 






2.5 


V 


Cobo 


V C B " 10V 






400 


pF 


SOA 


TO-3, VCE = 50V, t= 1 sec 


3.0 






A 


ft 


IC= 1A, V C E " 10V, f = 1 MHz 


4 






MHz 


PO(MAX) 


TO-3 


175 






W 


PD(MAX) 


TO-220 


75 






W 


0jc 


TO-3 






1.0 


°C/W 


9jc 


TO-220 






1.66 


°C/W 



PRINCIPAL DEVICE TYPES 



TO-3 

2N5632 2N5881 

2N5633 2N5882 

2N5634 BD351 



7-18 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 



Process 4C 




Base-Emitter ON Voltage vs 
Collector Current 




0.01 0.1 1 10 100 

If; - COLLECTOR CURRENT (Al 



Collector-Emitter Saturation 
Voltage vs Collector Current 




0.01 01 1 10 100 

i c - COLLECTOR CURRENT (A) 



Junction Capacitance vs 
Reverse Bias Voltage 




V B - REVERSE BIAS VOLTAGE IVI 



Safe Operating Area TO-3 




1 10 100 

V CE - COLLECTOR EMITTER VOLTAGE IV) 



Base-Emitter Saturation 
Voltage vs Collector Current 



CO 

I 

p 



2* ob 













































































1 


















































































Y 














































nfi 



































l c - COLLECTOR CURRENT IA) 



s 




z 


200 


- 


180 






1 


160 


a 


140 


EC 






120 


S 


a 


100 


B 


80 






X 

3 


60 




a 




20 


s 






Maximum Power Dissipation vs 
Case Temperature 





























































































-3 






































220 


















jfi 





















































- CASE TEMPERATURE TO 



o 
o 
© 

fit 



7-19 



National 
dui Semiconductor 



Process 4G NPN 
Epitaxial Power 




DESCRIPTION 

Process 4(3 is a double epitaxial silicon mesa transistor 
with diffused emitter. 

APPLICATION 

This device was designed for general purpose amplifier 
and switching circuits where a large safe operating area 
is required. 



PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVrFD 


IC - 200 mA 


60 


80 


150 


V 


BVCBO 


IC = 1 mA 


60 






V 


BVEBO 


I E = 1 00 yUA 


5 






V 


ICEO 


VcE = 30V 






2 


mA 


ICEX 


V C E = 60V, VbE = -1-5V 






1 


mA 


ICBO 


V C B = 60V 






1 


mA 


lEBO 


V B E = 5V 






1 


mA 


HFE 


l C = 3A, V C E = 4V 


35 








hfe 


l C = 10A, V C E = 4V 


20 




100 




hfe 


l C = 20A, V C E = 4V 


5 








vceisati 


lC = 15A, l B = 1.5A 






1 


V 


VCE(SAT) 


lC = 20A, Ib = 4A 






4 


V 


VBE(SAT) 


l C = 15A, l B = 1.5A 






1.8 


V 


VBE(ON) 


l C = 20A, V C E = 4V 






2.5 


V 


Cobo 


V C B = 10V 






500 


pF 


ft 


IC= 1A. V C E= 10V, f- 1 MHz 


4 






MHz 


PD(MAX) 


TO-3 


200 






W 


fl jc 


TO-3 






0.875 


°C/W 



PRINCIPAL DEVICE TYPES 

TO-3 

2N5629 
2N5630 
2N5631 
2N5885 
2N5886 
2N5301 
2N5302 
2N5303 
MJ802 



7-20 



yWA National 

£m Semiconductor 



Process 4K NPN 
Epitaxial Power 



I 




0.116 
(2.946) 



DESCRIPTION 

Process 4K is a double epitaxial silicon mesa Darlington 
transistor. 

APPLICATION 

The 4K was designed for general purpose amplifier 
and low-speed switching applications. 



PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


IC = 100 mA 


60 


30 


150 


V 


BVCBO 


IC = 500 /jA 


60 






V 


BVEBO 


I E = 5 mA 


5 






V 


'CEO 


V C E = 30V 






0.5 


mA 


ICEX 


VcE = 60V, Veb = 15V 






0.5 


mA 


lEBO 


V B E - 5V 






2.0 


mA 


hfe 


IC = 4A, V C E = 3V 


750 




18000 




hfe 


IC = 8A,V C E = 3V 


100 








VCE(SAT) 


IC = 4A . 'B = 16 mA 






2 


V 


VCE(SAT) 


IC = 8A, Ib = 80 mA 






3 


V 


VBE(SAT) 


IC = 8A, lB = 80mA 






4 


V 


VBE(ON) 


| C = 4A, VcE = 3V 






2.8 


V 


Cobo 


V C B= 10V 






200 


pF 


ft 


IC = 3A, V C E = 3V, f = 1 MHz 


4 






MHz 


P D(MAX) 


TO-3 


120 






W 


PD(MAX) 


TO-220 


60 






W 


#jc 


TO-3 






1.66 


°C7W 


0jc 


TO-220 






2.08 


°C/W 



PRINCIPAL DEVICE TYPES 



TO-3 

2N6055 
2N6056 
2N6383 
2N6384 



2N6385 
MJ1000 
MJ1001 



TO-220 
TIP121 
TIP122 
TIP130 
TIP131 



TIP132 
SE9300 
SE9301 
SE9302 



7-21 



Process 4K 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




0.1 1 10 

l c - COLLECTOR CURRENT (A) 



Collector Emitter Saturation 
Voltage vs Collector Current 




0.1 1 10 

If; - COLLECTOR CURRENT (A) 



Base-Emitter Saturation 
Voltage vs Collector Current 




0.1 1 10 

I C -C01LECT0RCURRENT (A) 



Base-Emitter ON Voltage vs 
Collector Current 

















Vr 






















































































































































/ 






-A 

r > 


f 












y 


































25 C 






































use 











0.01 0.1 1 10 

1 C - COLLECTOR CURRENT (A) 



Junction Capacitance vs Reverse 
Bias Voltage 




0.1 1 10 100 

V R - REVERSE BIAS VOLTAGE (V) 



Maximum Power Dissipation vs 
Case Temperature 
























— 






















3 






- 














































































r-4- 




- 






















— 



























































































































40 80 120 160 200 
T C - CASE TEMPERATURE I CI 



Safe Operating Area TO-3 



Safe Operating Area TO-220 




1 10 100 

V CE - COLLECTOR EMITTER VOLTAGE (VI 




1 10 100 

V CE - COLLECTOR-EMITTER VOLTAGE (VI 




7-22 



National 
mjM Semiconductor 



Process 5A Epitaxial Power 




DESCRIPTION 

Process 5A is a double epitaxial silicon PNP mesa 
device with a diffused emitter. 

APPLICATION 

This device was designed for general purpose 
power amplifier and switching circuits where a 
large safe operating area is required. 



PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BV CEO 


l c = 200 mA, (Note 1) 


40 




100 


V 




l c = 1 mA 


60 




150 


V 


BV EBO 


l E = 0.5 mA 


5 


7 




V 


'ceo 


V CE = BV CEO - 10V 




10 


200 


MA 


'cBO 


V CB = BV CEO +20V 




1 


20 


fA 


'ebo 


V EB = 5V 




1 


500 


uA 


n FE 


l c = 2.5A, V CE = 2V 


20 




200 




V CE(SAT) 


4 = 4 A, l B » 0.4 A 




0.5 


0.6 


V 


V BE(ON) 


l c = 5 A. V CE = 2V 




1.2 


1.3 


V 


SoA 


l c = 3 A, t = 1 sec 


30 






V 


f, 


l c = 0.5 A, V CE =5V, f = 1 MHz 


2 








td 


l c = 5 A. I B1 = l B2 = 0.5 A 
V cc " 40V 




0.03 




/JS 


tr 


l c = 5A, l B1 - l B2 =0.5 A, 
V cc ■ 40V 




0.27 




MS 


t, 


l c = 5 A, l B1 = l B2 =0.5 A, 
V cc = 40V 




0.3 




MS 


tf 


l c =5 A, l B1 = l B2 =0.5 A, 
V cc " 40V 




0.37 




MS 


P D(MAX) 


TO-220 


60 










TO-220 






2.08 



°C/W 



Note 1: Pulsed measurement = 300 Ms pulse width. 

PRINCIPAL DEVICE TYPES 

TO-220 

NSP5974 NSP2955 D45H4 

NSP5975 2N6489 D45H5 

NSP5976 2N6490 D45H7 

NSP2010 2N6491 D45H8 

NSP2011 D45H1 D45H10 

NSP105 D45H2 D45H11 



7-23 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




0.01 0.1 1 

l c - COLLECTOR CURRENT (A) 



Col lector- Emitter 
Saturation Voltage 
vs Collector Current 



1.4 

S3 • 
1| u 

as 

f 0.2 




T - Tin 


















u 



















. f 




















n 


s 


































































♦25" 


















































HI 


















































































c 






















- 





























0.01 0.1 1 10 

lc - COLLECTOR CURRENT (Al 



Base-Emitter Saturation 
Voltage vs Collector 
Current 



1 

—I* 


111! 
























B 




'J 














































































































40 


C 
























































2S 


:- 











































































0.01 0.1 1 10 

l c - COLLECTOR CURRENT (A) 



3^ 



Base-Emitter "ON" 
Voltage vs Collector 
Current 



1 1 1 


















u 








































































































10 












































- 


25 , c 


C 




















: 


125 







































0.01 0.1 1 10 

l c - COLLECTOR CURRENT (A) 



Gain Bandwidth Product 
vs Collector Current 




0.1 1 10 

l c - COLLECTOR CURRENT (A) 



Junction Capacitance 
vs Reverse Bias Voltage 




2 10 20 

V R - REVERSE BIAS VOLTAGE IV) 



Safe Operating Area TO-3 




t 10 100 

Vcj - COLLECTOR-EMITTER VOLTAGE (V) 



Safe Operating Area TO-220 
S ifln 



£ 1 




Maximum Power Dissipation 
vs Case Temperature 







1 


















1 u 


* — 












































































1 


0— 





































































































































Vce - COLLECTOR-EMITTER VOLTAGE (VI 



40 80 120 160 200 
T C -CASE TEMPERATURE ( CI 



7-24 



National 
£ji Semiconductor 



Process 5B PNP 
Epitaxial Power 




DESCRIPTION 



Process 5B is a double epitaxial silicon mesa transistor 
with diffused emitter. 

APPLICATION 

This device was designed for general purpose amplifier 
and switching circuits where a large safe operating area 
is required. 



PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


IC = 200 mA 


60 


80 


150 


V 


BV C BO 


IC '<= 500 AlA 


60 






V 


BVEBO 


l£ = 100 uA 


5 






V 


ICEO 


V C E = 30V 






2 


mA 


'CEX 


V C E = 60V, V B £ = -1.5V 






1 


mA 


ICBO 


V C B " 60V 






1 


mA 


iebo 


V B E = 5V 






1 


mA 


hfe 


IC " 1A, Vqe = 2V 


25 








hfe 


l C = 3A. V C E = 2V 


15 




100 




hfe 


IC = 8A, V C E = 4V 


5 








VCE(SAT) 


IC = 5A, l B = 0.5A 






1 


V 


VCE(SAT) 


IC = 8A, l B = 1.6A 






4 


V 


VBE(SAT) 


l C - 5A, l B = 0.5A 






1.8 


V 


vbeioni 


l C = 3A, V C E = 2V 






2.5 


V 


Cobo 


V C B = 10V 






500 


pF 


ft 


IC = 0.5A, VCE - 10V, f = 1 MHz 


4 






MHz 


Pd(MAX) 


TO 3 


150 






W 


p D(MAX) 


TO-220 


70 






W 


e jc 


TO-3 






1.16 


°c/w 


#jc 


TO-220 






1.78 


°c/w 



PRINCIPAL DEVICE TYPES 

T03 

2N3789 2N4908 2N6227 

2N3790 2N4909 2N6228 

2N3791 2N5875 MJ2940 

2N3792 2N5876 MJ2941 

2N4907 2N6226 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 























2V 




















1- - »CE 


































125 ( 






























- 






















































i 
^0 










— 





































































































































































































































0.01 0.1 1 

Iq - COLLECTOR CURRENT (A) 



Process 5B 



Collector-Emitter Saturation 
Voltage vs Collector Current 



1.4 

H£ 1.2 
E > 

is ' 

il °' 8 

|l 0-6 

15 04 





















il*' 1 






















10 jl 




























































































25 


c J 












































































































25 











































































0.01 0.1 1 10 

l c - COLLECTOR CURRENT (Al 



Base-Emitter Saturation Voltage 
vs Collector Current 




0.01 0.1 1 10 

l c - COLLECTOR CURRENT (Al 





7-26 




National 
Semiconductor 




Process 5C PNP 
Epitaxial Power 



DESCRIPTION 

Process 5C is a double epitaxial silicon mesa transistor 
with diffused emitter. 



APPLICATION 

This device was designed for general purpose amplifier 
and switching circuits where a large safe operating area 
is required. 



PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


IC = 200 mA 


60 


80 


150 


V 


BVcBO 


IC = 500 uA 


60 




100 


V 


BVEBO 


I E =100mA 


5 






V 


ICEX 


V CE r 60V < V BE = 1.5V 






0.5 


mA 


'CBO 


V C B = 60V 






0.5 


mA 


lEBO 


VEB = 5V 






1.0 


mA 


hfe 


IC = 2A, VcE = 4V 


35 








hfe 


IC= 6A, V C E = 4V 


20 




100 




hfe 


IC= 12A, V C E = 4V 


5 








V CE(SAT) 


l C =7A. I B = 7A 






1 


V 


VCE(SAT) 


IC = 12A, l B = 2.4A 






4 


V 


VBE(SAT) 


IC = 7A, l B = 0.7A 






1.6 


V 


VBE(ON) 


IC= 12A, VcE = 4V 






2.5 


V 


Cobo 


V C B = 10V 






600 


pF 


ft 


IC " 1A, VCE = 10V, f = 1 MHz 


4 - 






MHz 


PO(MAX) 


TO-3 


175 






W 


PD(MAX) 


TO-220 


75 






W 


0jc 


TO-3 






1.0 


°C/W 


Bjc 


TO-220 






1.66 


°C/W 



PRINCIPAL DEVICE TYPES 
TO-3 

2N6229 2N5879 
2N6230 2N5880 
2N6231 BD350 



o 

o 

<D 
Cfi 
Ol 

o 







Typical Normalized Pulsed 
Current Gain vs Collector 
Current 



Process 5C 



Collector-Emitter Saturation 
Voltage vs Collector Current 



Base-Emitter Saturation 
Voltage vs Collector 
Current 






0.01 0.1 1 10 100 

Ir; - COLLECTOR CURRENT (A) 



0.01 0.1 1 10 100 

l c - COLLECTOR CURRENT (At 



0.01 0.1 1 10 

l c - COLLECTOR CURRENT (A) 



Base-Emitter ON Voltage vs 
Collector Current 




0.01 0.1 1 10 

l c - COLLECTOR CURRENT (A) 



Maximum Power Dissipation vs 
Case Temperature 

















































TCI 


3 














































































TO 


•20 



































































20 40 60 00 100 120 140 160 180 200 
T c - CASE TEMPERATURE I 



Junction Capacitance vs Reverse 
Bias Voltage 




I 10 100 

V R - REVERSE BIAS VOLTAGE (VI 



Safe Operating Area TO-3 




1 10 100 

V CE - COLLECTOR EMITTER VOLTAGE IVI 



7-28 



National 
£m Semiconductor 



Process 5G PNP 
Epitaxial Power 



■■ 




DESCRIPTION 

Process 5G is a double epitaxial silicon mesa transistor 
with diffused emitter. 

APPLICATION 

This device was designed for general purpose amplifier 
and switching circuits where a large safe operating area 
is required. 



PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BVCEO 


IC = 200 mA 


60 


80 


150 


V 


BVcBO 


IC = 1 mA 


60 






V 


bvebo 


Ie>- 100 mA 


5 






V 


'CEO 


Vce = 30V 






2 


mA 


ICEX 


Vce * 60V, VbE ■ 1-5V 






1 


mA 


ICBO 


V C B = 60V 






1 


mA 


lEBO 


V EB = 5V 






1 


mA 


HFE 


IC = 3A, Vce = 4V 


35 








Hfe 


IC= 10A, V CE = 4V 


20 




100 




hfe • 


IC = 20A, V C E = 4V 


5 








VCE(SAT| 


IC= 15A, l B « 1.5A 






1 


V 


V CE(SAT) 


IC = 20A, l B = 4A 






4 


V 


VBE(SAT) 


IC = 15A, l B = 1.5A 






1.8 


V 


VBE(ON) 


IC = 20A, V C E = tv 






2.5 


V 


C-obo 


V C B = 10V 






800 


pF 


ft 


IC = 1A, V C E = 10V, f = 1 MHz 


4 






MHz 


PD(MAX) 




200 






W 


0jc 








0.875 


°c/w 



PRINCIPAL DEVICE TYPES 

TO-3 

2N6029 
2N6030 
2N6031 
MJ4502 



m 

v> 

(A 

a> 
o 
o 




National 
Semiconductor 



Process 5K PNP 
Epitaxial Power 




0.116 
(2.946) 



DESCRIPTION 

Process 5K is a double epitaxial silicon mesa Darlington 

transistor. 

APPLICATION 

The 5K was designed for general purpose amplifier 
and low-speed switching applications. 



PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


BV C EO 


IC = 100 mA 


60 


80 


150 


V 


BVCBO 


IC = 500 /jA 


60 






V 


BVEBO 


I E = 5 mA 


5 






V 


ICEO 


VcE = 30V 






0.5 


mA 


ICEX 


VCE = 60V, Veb = 1-5V 






0.5 


mA 


! EBO 


V B E = 5V 






2.0 


mA 


HFE 


IC { "A, V CE - 3V 


750 




18000 




hfe 


l C = 8A. V C E = 3V 


100 








VCE(SAT) 


IC = 4A . !B = 16 mA 






2 


V 


V CE(SAT) 


IC = 8A. IB * 80 mA 






3 


V 


VBE(SAT) 


Iq = 8A, Ib = 80 mA 






4 


V 


VBE(ON) 


I C = 4A, V C E ■ 3V 






2.8 


V 


Cobo 


V CB = 10V 






300 


pF 


ft 


Iq T 3A, V C E = 3V, f = 1 MHz 


4 






MHz 


PD(MAX) 


TO 3 


120 






W 


p D(MAX) 


TO 220 


60 






W 


8}c 


TO-3 






1.66 


°CAV 


9jc 


TO-220 






2.08 


°CAV 



PRINCIPAL 

TO-3 

2N6053 
2N6054 
MJ900 
MJ901 



DEVICE TYPES 
TO-220 

TIP125 TIP136 
TIP126 TIP137 
TIP127 SE9401 
TIP135 SE9402 



Process 5K 



Typical Normalized Pulsed 
Current Gain vs Collector 
Current 




0.01 0.1 1 

l c - COLLECTOR CURRENT (A) 



Collector-Emitter Saturation 
Voltage vs Collector Current 



a 3 



1 

-1.-1 





























































































i 




























i 


















> 
















































t 












-t 


c 
re 

5 C 






















i 



















0.1 i . to 

If; - COLLECTOR CURRENT (A) 



Base-Emitter Saturation 
Voltage vs Collector Current 



5§ 
> 3 



... 'c 




















'a 


2! 

































































/ 




















/ 


/ 







































C 






















r 

5 


r 
c 




































12S 


- 

c 



















0.1 I 10 

Iq - COLLECTOR CURRENT 1A) 



Base-Emitter ON Voltage vs 
Collector Current 





I M INN 












































































































































1 




















: 


















C 


















ft 






25 





















































Junction Capacitance vs 
Reverse Bias Voltage 




l c - COLLECTOR CURRENT IA) 



0.1 1 10 

V R - REVERSE BIAS VOLTAGE {VI 



Maximum Power Dissipation vs 
Case Temperature 




40 80 120 160 200 
T c - CASE TEMPERATURE ( CI 



Safe Operating Area TO 3 



Safe Operating Area TO 220 




1 10 100 

V CE " COLLECTOR EMITTER VOLTAGE (VI 




1 10 100 

V CE - COLLECTOR-EMITTER VOLTAGE (VI 



C 

o 




7-31 



JFET Selectior 



S3 



N-Channel 



SWITCHES/CHOPPERS 



Type 
No. 


Case 
Style 


bvgss 

BV GD0 
IV) 9 l G 
Min ImA) 


less 
•idgo 

InA) @ V DG 
Max IVI 


InA] 
Max 


'D(off) 
■ V DS 
IV) 


Vgs 

IV) 


V P 

IV) 



Min Max 


v D s 

(V) 


Id 

InA) 


Idss 

ImA) 
Mm Max C 


,V D S 
IV) 


'dslonl 

IW id 

Max ImA) 


IpF) 
Max 


Ciss 
IVI 


vgs 

IVI 


Max 


Wra 
v D s 

(V) 


vgs 

(VI 


Ion 
Insl 
Max 


•off 
Insl 
Max 




2N3824 


TO-72 


50 




0.1 


30 


0.1 


15 


-8 




8 


15 


.1 








250 




6 


15 





3 





-8 








2N3966 


TO-72 


30 




1 


20 


0.1 


10 


-7 


4 


6 


10 


10 


2 




20 


220 




6 


20 





1.5 





7 








2N3970 


TO 18 


40 




0.25' 


20 


0.25 


20 


-12 


4 


10 


20 




50 


150 


20 


30 




25 


20 





6 





-12 


20 


30 




2N3971 


TO- 18 


40 




0.25- 


20 


0.25 


20 


12 


2 


5 


20 




25 


75 


20 


60 




25 


20 





6 





-12 


30 


60 




2N3972 


TO-18 


40 




0.25- 


20 


0.25 


20 


-12 


0.5 


a 


20 




S 


30 


20 


100 




25 


20 





'6 





-12 


80 


100 




•2N4091 


TO- 18 


40 




0.2" 


20 


0.2 




-12 






20 




30 




20 


30 




16 


20 





5 







25 


40 




•2N4092 


TO-18 


40 




2' 


20 


0.2 




8 


2 




20 


! 


15 




20 


50 




16 


20 





5 





20 


35 


60 




•2N4093 


TO-18 


40 




02' 


20 


0.2 




-6 






20 




8 




20 


80 




16 


20 


o 


5 





- 20 


60 


80 




2N4391 


TO-18 


40 




0,1 


20 


0.1 


20 


-12 


4 


10 


20 




50 


150 


20 


30 




14 


20 




3.5 




-12 


20 


35 




2N4392 




40 






20 




20 


-7 






20 








20 


60 




14 


20 
















2N4393 


TO 18 


40 




0.1 


20 


1 


20 


-5 


0.5 


3 






5 






100 




14 


20 




3.5 







20 


80 




• 2TM4856 


TO-18 


40 




025 


20 


0.25 


15 -10 


4 


10 
















18 





10 


8 









25 




2N4856A 


TO 18 


40 1 


0.25 


20 


25 


15 


-10 


4 


10 


15 


5 


50 




15 




10 





-10 


A 





-10 


8 


20 




•2N4857 


TO-18 


40 1 


025 


20 


25 


15 


-10 


2 


Ml 


15 


.5 


2C 


100 


'5 


40 


18 





-10 


8 




-10 


10 


50 




2N4857A 


TO 18 


40 1 


0.25 


20 


0.25 


15 


-10 


2 


6 


15 


.5 


20 


100 


15 


40 


10 





-10 


3.5 





-10 


10 


40 




•2IM4858 


TO 18 


40 1 


0.25 


20 


0.25 


15 


10 


0.8 


4 


15 


' .5 


s 


80 


15 


60 


18 





10 


8 





-10 


20 


100 




2N4858A 


TO-18 


40 




0.25 


20 


0.25 


15 


-10 


0.8 


4 


15 


.5 


8 


80 


15 


60 




10 





-10 


35 





10 


16 


80 




•2N4859 


TO-18 


30 




0.25 


15 


0.25 


15 


-10 


4 


10 


15 


.5 


50 




15 


25 




18 





10 


8 





-10 


9 


25 




2N4859A 


TO-18 


30 




0.25 


15 


0.25 


15 


-10 


4 


10 


15 


.5 


50 




15 


25 




10 





-10 


4 





-10 


8 


20 




•2N4860 


TO-18 


30 




0.25 


15 


0.25 


15 


-10 


2 


e 


15 


.5 


20 


100 


15 


40 




18 





10 


8 





10 


10 


50 




2NI4860A 


TO-18 


30 




0.25 


15 


0.25 


15 


-10 


2 


6 


15 


.5 


20 


100 


15 


40 




10 





-10 


3.5 





-10 


10 


40 




•2N4861 


TO-18 


30 




0.25 


' 15 


0.25 


15 


-10 


0.8 


4 


15 


.5 


8 


80 


15 


60 




18 





-10 


8 





-10 


20 


100 




2N4861A 


TO-18 


30 




0.25 


15 


0.25 


15 


-10 


0.8 


4 


16 


.5 


8 


80 


15 


60 




10 





-10 


3.5 





-10 


16 


80 




2N5432 


T.O-52 


* 




0.2 


15 


0.2 


6 ' 


-10 




10 


5 


3 


150 




15 


5 


10 


30 





10 


15 





10 


5 


36 




2N5433 


TO- 52 






02 


15 


0.2 




-10 






5 


3 


100 




15 


1 


10 


30 





10 


15 





-10 


5 


36 




2N5434 


TO-52 


25 




0.2 


15 


0.2 


5 


-10 




4 5 3 


30 15 


10 10 


30 10 


15 





- 10 


5 


36 




2N5555 


TO-92 


25 


10 


1 15 


10 


12 


-10 


110) 


15 




15 


150 


5 


15 





1.2 





-10 


10 


25 





• Note. JAN qualified per applicable MIL-S-19500 specification. 



N-Channel F 



Type 
No. 


Case 
Style 


BVqsS 
BV GD0 

IVI S> 
Min U 


G 
A) 


'gss 
*'dgo 

(nAI @ Vqg 
Max (V) 


(nA) 
Max 


'Dloffl 
6> V DG 


Vgs 

IVI 


IVI 
Min Max 


V P 

<S> V DS 
IVI 


'd 

(nAI 




'DSS 
mAI 

@ 

Max 


v D s 

(VI 


r dslon 
Ifil e 
Max I 


I 

■D 
nAI 


IpF) @ 
Max 


^iss 

v D s 

(VI 


Vgs 

(VI 


Max 


C,ss 

v D s 

(VI 


vgs 

(VI 


Ion 
Insl 
Max 


'off 
(nsl 
Max 


Proc 
No 


' ; . 

2N5638 


TO 92 




10 














1121 






50 




20 


. 30 




















5 


2N5639 


TO-92 


30 


10 


1 


15 




15 


-8 




IS) 






25 




20 


60 




10 





12 


J 










5 


2N5640 


7 9.! 


30 


10 


l" 




1 




- 






■flU 




5 




20 


100 


1 


10 


6 


12 


4 





-e ; 








2N5653 


TO-92 


30 


10 


1 


15 


1 


15 


-12 




(12) 






40 




20 


50 




10 





-12 







-12 


9. 


15 


5" 


2N5654 


TO-92 


25 


10 


1 


15 


10 


15 


-8 




181 






15 




20 


100 




10 





1 2 







-8 


14 


30 


5 


J108 


TO-92 


25 






15 


3 


5 


10 




10 


5 


1000 


80 




15 


8 


10 


130 





- 10 


115 





-10 


t5 


l36 




JI09 


TO-92 










3 




-10 




6 


5 


1000 


40 




15 


12 


10 


130 





10 


tl5 





-10 


(5 


136 




J1 10 


TO-92 


25 






15 






-10 




4 




1000 


10 




15 




10 


130 





-10 


115 





■ 10 


15 


136 


& 


J111 


TO-92 


35 




I 


15 






- 10 


3 


10 




1000 


20 




15 


30 




110 





-10 


15 





-10 


(13 


135 


5 


jrij 


TO-92 


35 




■J - 


15 


! 




TO 


1 


' 5 


5 


1000 


5 




15 


50 




110 





-10 







10 


Tl 3 


135 


5 


J113 


TO-92 


35 




i 


15 


1 


5 


10 


5 


; 3 


-5; 


1000 


7 




15 


100 




no 





-10 


t5 





-10 


t13 


135 




J1 14 


TO-92 




1 15 


1 5 


-10 




10 




1000 


15 




15 


150 1 


t4 


-10 


t? 


10 


16 


t20 


91 


PN4091 


TO-92 


40 




1- 


20 


* 1 


20 


12 


5 


. 10 


20 


i 


30 




20 


30 




16 


20 







20 


o 


25 


40 


■ ; 5 


P1SJ4092 


TO-92 


40 




1" 


20 


1 




-8 


2 


7 


20 




15 




20 


50 




16 


20 





5 


20 


11 - 


35 


60 


5 


PN4093 


TO-92 


40 




?• 


20 








1 


5 


20 








20 


80 




16 








20 





60 


SO 


:i 5 


PN4391 




40 




i 


20 




20 


-12 


4 


10 


2B 




50 


150 


20 


30 




14 


20 





35 





-12 


20 


35 


: ~ 5 


PN4392 


TO-92 


40 




i 


20 


1 


20 


-7 




6 


20 


! 


25 


75 


20 


60 




14 


20 





3.5 







40 


80 


5 


PN4393 


TO-92 


40 




i 


20 


1 


20 


-5 


0-5 


3 


20 


I 


5 


30 


20 


100 




14 


20 





3.5 





. 5 


55 


130 


5 


PN4856 


T092 


40 




i 


20 




15 


10 


4 


■10 


15 


.5 


50 




15 


25 




18 





-10 


8 





- TO ; 


9 


25 


r * 


PN4857 


TO-92 


40 




1 


20 


1 


15 


-1Q 


3 


£ 


16 




20 


100 


15 


40 




18 





-10 


8 





- 10 


10 


50 


« 


PN4S58 


TO-92 


1 40 ' 




i ' 


20 


1 


lb 


10 


0,8 


3 15 


A 


9 


80 1 




60 




18 


a 


■10 


8 


O 


• -10 i 


20 


100 


5 


PN4859 


TO-92 


30 




i 


15 


1 


15 


-10 


4 


10 


15 


.5 


50 




15 


25 




18 





-10 


8 





-10 


9 


25 


5 


PN4860 


TO-92 


30 




i 


15 


1 


15 


-10 


2 


6 


15 


.5 


20 


100 


15 


40 




18 





-10 


8 





-10 


10 


50 


5 


PN4861 


TO-92 


30 




i 


15 


1 


15 


- 10 


0.8 


4 


15 


.5 


8 


80 


15 


60 




18 





-10 


8 





-10 


20 


100 




TIS73 


TO-92 


30 




2 


15 


2 


15 


-10 


4 


10 


15 


4 


50 




15 


25 




18 





- 10 


8 





-10 


9 


25 


I 


T1S74 


TO-92 


30 




2 


15 


2 


15 


-10 


2 


6 


15 


4 


20 


100 


15 


40 




18 





-10 


8 





-10 


10 


50 




TIS75 


TO-92 


30 




2 


15 


2 


15 


-10 


0.8 


4 


15 


4 


8 


80 


15 


60 




IS 





10 


8 





-10 


20 


100 


5 


U1897E 


TO-92 


40 




0.2- 


20 








5 


10 


20 


1 


30 




20 


30 


1 


16 


20 





5 





-20 


25 


40 


5 


U1898E 


TO-92 


40 




0.2- 


20 








2 


7 


20 


1 


lb 




20 


50 


1 


16 


20 





5 





20 


35 


60 


5 


U1899E 


TO-92 


40 




0.2- 


20 








1 


5 


20 


1 


8 




20 


80 


1 


16 


20 





5 





-20 


60 


80 


5 




apino uo;p9|9S 




SWITCHES/CHOPPERS (Continued) 



JFET Selection Guide 



53 



N-Channel FETs 



RF,VHF,UHF AMPLIFIERS 



Type 
No. 


Case 
Style 


BVGSS 

bvgdo 

(VI @ l G 
Min (mA) 


IpAl 
Max 


l G SS 
OGO 
8 V DG 
(VI 


Min 


IVI 

Max 


e v DS 

IVI 


'd 

InAI 


'dss 

ImAI 
Min Max 


" v DS 
IVI 


(mmho) @ Fteq 
Min IMHzl 


RelV 
(Mmho) @ 
Max 


o<) 

f 

IMHzl 


Ciss 

IpFI G>V DS 
Max (VI 


Vrc 
IVI 


IpFI @ 
Max 


c rs5 
v ds 

IVI 


vqs 

IVI 


(dBI « 
Max 


NF 

R G - Ik 
Freq 
IMHzl 


Process 
No. 


Pkg. 
No. 


2N3819 


TO-92 


2B 1 


2 


15 




8 


15 


2 


2 


20 


15 


1.6 


100 






8 


15 





4 


15 









50 


74 


2N3823 


TO-72 


30 1 


0.5 


20 




8 


15 


.5 


4 


20 


15 


3.2 


200 


200 


200 


6 


15 





2 


15 





2.5 


100 


50 


25 


2N4223 


TO-72 


30 10 


0.25 


20 


0.1 


8 


15 


.25 


3 


18 


15 


2.7 


200 


200 


200 


6 


15 





2 


15 





5 


200 


50 


25 


2N4224 


TO-72 


30 10 


0.5 


20 


0.1 


8 


15 


.6 


2 


20 


15 


1.7 


200 


200 


2O0 


6 


15 





2 


15 









50 


25 


2N4416 


TO-72 


30 1 


0.1 


20 




6 


16 


1 


5 


15 


15 


4 


400 


IO0 


400 


4 


15 





0.8 


15 





4 


400 


50 


25 


•2N4416A 


TO-72 


35 1 


1 20 








15 15 


15 


4 


4O0 


100 400 


4 


16 





0.8 


15 


o 


4 


4O0 


50 


25 


2N5078 


TO 72 


30 1 


0.25 


20 


0.5 


8 


16 




4 


25 


16 


4 


200 


150 


200 


6 


15 





2 


15 





3 


200 


50 


25 


2N5245 


TO-92 


30 1 


1 


20 


1 


6 


15 


10 


5 


15 


15 


4 


400 


100 


400 


4.6 


15 







15 





4 


400 


90 


77 


2N5246 


TO-92 


30 1 


1 


20 


0.5 


4 


15 


10 


1.6 


7 


15 


2.5 


400 


1O0 


400 


4.5 


15 





i 


15 









90 


77 


2N5247 


TO-92 


30 1 


1 


20 


1.6 8 15 


10 


a 


24 


15 


4 


400 


150 400 


4.5 


16 





T 


15 









90 


77 


2N5248 


TO-92 


30 1 


6 


20 


1 


8 


15 


10 


4 


20 


15 


3 


200 


200 


200 


6 15 





2 


15 







50 


74 


2N5397 


TO-72 




0.1 


15 




6 


10 


1 


10 


30 


10 


5.5 


450 


200 


450 


5 


10 


10m 


1.2 


10 


10m 


3.5 


450 


90 


29 


2N5398 


TO-72 


25 1 


0.1 


16 


16 10 1 


5 


40 


10 


5.0 


450 


400 


450 


5.5 


10 





1.3 


10 





3.2 


450 


90 


29 


2N5484 


TO-92 


25 1 


1 


20 


0.3 


3 


15 


10 


1 


5 


15 


2.5 


100 


76 


100 


5 


15 





1 


16 





3 


100 


50 


72 


2N5485 


TO-92 


26 1 


1 


20 


1 


A 


15 


10 


4 


10 


15 


3 


400 


100 


400 


5 


15 





i 


15 





4 


400 


60 


72 




TO-92 


25 1 










10 


8 


20 


15 


3.5 


400 


100 400 


5 16 





1 


15 





4 


400 


50 


72 


2N5668 


TO-92 


25 10 


2 


15 


0.2 


4 


15 


10 


1 


5 


15 


1 


100 


50 


100 


7 


15 





3 


15 





2.5 


100 


50 


72 


2NB669 


TO-92 


25 10 


2 


15 


1 


6 


15 


10 


4 


10 


16 


1.6 


100 


100 


100 


7 


15 





3 


15 





2.6 


100 


50 


72 


2NS670 


TO-92 


26 10 


2 


15 


2 


8 


15 


10 


8 


20 


16 


2.5 


100 


150 


100 


7 


15 





3 


15 





2.5 


100 


50 


72 


2N5949 


TO-92 


30 1 




15 


3 


7 


15 


100 


12 


18 


16 


3.0 


100 


76 


100 


6 


15 





2 


16 





5 


100 


50 


77 


2N5960 


TO-92 


30 1 


1 


16 


2.5 


6 


15 


100 


10 


15 


15 


3.0 


100 


75 


100 


6 


15 





2 


15 





5 


100 


50 


77 


2N6951 


TO-92 


30 1 


1 


15 


2 


5 


16 


100 


7 


13 


16 


3.0 


100 


75 


100 


6 


15 





2 


15 





5 


100 


50 


77 


2N5962 


TO-92 


30 1 


1 


15 


1.3 


3.5 


16 


100 


4 


8 


16 


1.0 


100 


75 


100 


6 


15 





2 


16 





5 


100 


60 


77 


2N5953 


TO-92 


30 1 


1 


15 


.8 


3 


15 


100 


2.5 


5 


15 


1.0 


100 


50 


100 


6 


15 





2 


15 





5 


100 


60 


77 


J300 


TO-92 


26 1 


0.6 


15 


1 


6 


10 


1 


6 


30 


10 


4.5 


.001 


200 


.001 


5.5 


10 


5m 


1.7 


10 


5m 


12 


100 


90 


72 


J304 


TO-92 


30 1 


0.1 


20 


2 


6 


15 


1 


5 


15 


15 


14.2 


400 


i80 


100 


t3 


16 





1.8 


15 





14 


400 


50 


72 


J305 


TO-92 


30 1 


0.1 


20 


.6 


3 


16 


1 


1 


8 


15 


t3.0 


400 


180 


100 


13 


15 





t.8 


15 





14 


400 


50 


72 


J308 


TO-92 


25 1 


1 


15 


1 


6.5 


10 


1 


12 


60 


10 


8 


001 


200 


.001 


7.5 





-10 


2.5 





-10 


11 J 


100 


92 


72 


J309 


TO-92 


26 1 


1 


15 


l 


4.0 


10 


1 


12 


30 


10 


10 


.001 


200 


.001 


7.5 





-10 


2.5 





-10 


11.5 


100 


92 


72 


J3 '° 


TO-92 


25 1 


1 


,5 


2 


6.5 








to 


8 


.001 


200 


.001 


7.6 





-10 


2.5 





-10 


11.5 


100 


92 


72 



• Note. JAN qualified per applicable MIL-S-19500 specification. 



22 



N-Channel FETs 



RF, VHF, UHF AMPLIFIERS (Continued) 



Type 

No. 


Case 
Style 


bvqss 
bv gdo 
iv) e i G 

Min 1/iAI 


IpA) 
Max 


'GSS 
DGO 

e v DG 

(VI 


Mm 


IVI 

Max 


V P 

e v DS 

IVI 


'd 

InAI 


'DSS 
ImAI S 
Min Max 


v DS 

IVI 


R e 

ImMhol 
Min 


*,s' 

@ Freq 
IMH2) 


R e IV 
luMhol @ 
Max 


os> 

f 

IMHzl 


C ISS 
IpFI (av DS 
Max IVI 


vqs 

IVI 


c r < 

IpFI @ 
Max 


Vds 

IV) 


v G s 

IV) 


NF 

IdB) @ R G = Ik 
Freq 

Max IMHzl 


Process 
No. 


Pkg. 
No. 


MPF102 


TO-92 


25 




2 


16 




8 


15 


2 


2 


20 


15 


1.6 


100 


100 


200 


7 


15 







15 









50 


72 


MPF106 


TO-92 


25 






20 


0.5 


4 


15 


.5 


4 


10 


15 


2.5 


0.001 






5 


15 







15 





4 


400 


50 


72 


MPF107 


TO-92 


25 






20 


2 


6 


15 


.5 


8 


20 


15 


4 


0.001 






5 


15 





1.2 


15 





4 


400 


50 


72 


MPF108 


TO-92 


25 


10 




15 


0.5 


8 


15 


10t 


1.5 


24 


15 


1.6 


100 


200 


100 


6.5 


15 





2.5 


15 





3 


100 


50 


72 


PN4223 


TO-92 


30 




0.25 


20 


0.1 


8 


15 


1 


3 


18 


15 


2.7 


200 


200 


200 


6 


15 





2 


15 





5 


200 


50 


72 


PN4224 


TO-92 


30 




0.25 


20 


0.1 


8 


15 


5 


2 


20 


15 


1.7 


200 


200 


200 


6 


15 





2 


15 









50 


72 


PN4416 


TO-92 


30 




0.1 


20 




6 




1 


5 


15 


15 


4 


400 


100 


400 


4 


15 





0.8 


IS 





4 


400 


50 


72 


U308 


TO-52 






0.15 


15 




a 


10 




12 


60 


10 


10 


0.001 


150 


100 







10m 


2.5 





10mA 




450 


92 


07 


U309 


TO-52 


25 




15 


15 


1 


4 


10 


t !.» 


12 


30 


10 


10 


0.001 




100 


5 





10m 


25 





10mA 


13 


450 


92 


07 


U310 


TO-52 


25 




0.15 


15 


2.5 


6 


10 


1 


24 


60 


10 


10 


0.001 


150 


100 




10 


10m 


2.5 


10 


10mA 


t3 


450 


92 


07 


U312 


TO-52 


25 




0.1 


15 




6 


10 


V 


10 


30 


10 


6 


0.001 






3.8 


10 


10m 


\3 


10 


10mA 


13.5 


450 


90 


07 


U320 


TO-39 


20 




3 


15 


2 


10 


5 


1m 


100 


500 


15 


75 


0.001 






30 





10 


15 





10 


12.5 


30 


58 


09 


U321 


TO-39 


25 




3 


15 


1 


4 - 


s 


1m 


80 


250 


15 


75 


0.001 






30 





10 


15 





10 


12.5 


30 


58 


09 


U322 


TO-39 


25 




3 


15 


3 


10 


5 


1m 


200 


700 


15 


75 


0.001 






30 





10 


15 





10 


12.5 


30 


58 


09 



N-Channel FETs 



LOW FREQUENCY— LOW NOISE AMPLIFIERS 



Type 

No. 


Case 
Style 


BV GSS 
IVI @ l G 
Min IriA) 


InAI 
Max 


GSS 

@ v DG 

IVI 


IV 

Mm 


v GS(OFFI 
@ V DS 
Max IVI 


'D 
InAI 


! DSS 
ImAI « 
Mm Max 


'Vds 

IVI 


«f,IRelY f! l 
(mmho) Vds 
Mm Max (VI 


f 

IMHzl 


G os 

1 min.) 

Max 


vds 

IV) 


*-iS5 
IpFI ®>V DS 
Max IVI 


VQS 
IVI 


Crss 
lpFI@V DS 
Max (V) 


_ e n 
nV/vHz le> 
Max 


t 

(Hzl 


Process 
No 


Pkg. 
No. 


2N4393 


TO-18 


40 


10 


1 


20 


0.5 


3.0 


20 


1.0 


5.0 


30 


20 


112 




20 


0.001 






14 


20 





3.5 


5.0IGSI 


18.0 


10 


51 


02 


2N5556 


TO-72 


30 


10 


1 


15 


0.2 


4.0 


15 


1.0 


0.5 


2.5 


15 


1.5 


6.5 


15 


0.001 


20 


15 


6.0 


15 





3.0 


15 


35 


10 


50 


25 


2N5557 


TO-72 


30 


10 


0.1 




0.8 


5.0 


15 


1.0 


2.0 


5.0 




1.5 


6.5 


15 


0.0O1 


20 


15 


6.0 


15 





3.0 


15 


35 


10 


50 


25 


2N5558 


TO-72 




10 


0.1 




1.5 


6.0 


15 


1.0 


4.0 


10 


15 


1.5 


6.6 


15 


0.001 


20 


15 


6.0 


15 





3.0 


15 


35 


10 


50 


25 


NF5101 


TO 72 


40 


1 


0.2 


15 


0.5 


M 


15 


to 


1.0 


12 


15 


3.5 




15 


0.001 


25 


15 


112 


15 





14 


15 


35 


lk 


51 


25 


NF6102 


TO-72 


40 




0.2 




0.7 


16 


15 


1.0 


4.0 


20 


15 


7.5 




15 


0.001 


25 


15 


112 


15 





t4 


15 


3.5 


Ik 


51 


25 


NF5103 


TO-72 


40 


1 


0.2 




1.2 


2.7 


15 


10 


10 


40 


15 


7.5 




15 


0.001 


26 


15 


112 


15 





|4 




3 5 


lk 


51 


25 


PF5101 


TO-92 


40 


1 


0.2 


15 


0.6 


1.1 


15 


10 


1.0 


12 


15 


3.5 




15 


001 


26 


15 


112 


15 





t4 


15 


3.5 


1k 


51 


72 


PF5102 


TO-92 


40 


1 


0.2 


15 


07 


1.6 


15 


1.0 


40 


20 


15 


7.5 




IS 


0001 


25 


16 


112 


15 





|4 


15 


3.5 


lk 


51 


72 


PF5103 


TO-92 


40 


1 


0.2 


15 


12 


2.7 


IS 


1.0 


10 


40 


15 


7.5 




15 


0.001 


26 


15 


112 


15 





14 


15 


3.5 


lk 


51 


72 


PN4393 


TO 106 


40 1.0 


.) 1 


20 


0.5 


.in 


20 


1 II 


5.0 


30 


20 


112 




20 


(1 001 




14 


20 





3 1 


5.0IGS) 





10 


51 


72 



apmo uoipaps 13df 



JFET Selection 




N-Channel 



ULTRA LOW INPUT CURRENT AMPS 



Transistor 
Type 


Case 
Style 


BV GSS 

Bv GO o 

(v) © i G 


IpAl 


'gss 

DGO 
© Vqg 


IVI 

Min 


Max 


Vp 

<s> V DS 
IVI 


>d 

InAI 


>DSS 

ImAI 
Min Max 


» v DS 

IVI 


Gfs 

l/imho) . 
Min Max 


' vos 

IVI 


G OSS 
Iwmhol ©Vqs 
Max IVI 


Cj M 
IpFI 9 
Max 


Vds 

IV) 


v gs 

IV) 


IpFI 
Max 


G rss 

e v D s 

(VI 


v GS 

IVI 




P 






Min (>jA) 


Max 


(VI 






























Max (Hz) 




*N4M7 


TO 72 


40 1 


10 






1.8 


10 




30 


90 


10 


20 


210 


10 




1U 




10 




1.5 


10 







'■ 




10-72 


40 1 


1 




0.6 


1.8 


10 


i 


30 


90 


10 


70 


210 


10 




10 


3 


10 





1.6 


10 











loZ 




10 


20 










80 




10 


80 


2S0 


10 

10 




10 


3 


10 




1.5 











2N41 ISA 




40 1 


1 


20 






10 


1 


80 


240 


10 


80 


250 


5 


10 




IO 




1.5 


10 









2N41 19 


TO-72 


40 1 


10 




2 


6 


10 




200 


600 


10 


too 


330 




10 


•p 









1.5 


10 









2N4119A 


TOW 


— 40 1 — 




20 


2 . 6 10 1 


200 


600 


ib 


100 


330 


io' 


10 


■0 


3 


10 





15 


10 











N-Channei 



GENERAL PURPOSE AMPS 



Transistor 
Type 


Caw 
Style 


BVgss 
•BVQDO 

IV) © l G 

Min 1/aAI 


InAI 
Max 


'gss 

DGO 
* V 0G 

IVI 


v P 

IV) © 
Min Max 


Vds 

IVI 


Id 

InAI 


'dss 

ImA) © VDS 
Mm Max (V) 


Gfs 

(mmho) @ Vqs 
Mm Max IVI 


G oss 

(umhoie Vds 

Max (VI 


G iB 
IpFI @ 


Vds 

IV) 


vgs 

IV) 


c rss 
IpFI© V DS 
Max IVI 


Vqs 

(VI 


(/fir) 

Max 


n 

? Freq 
IHzl 




2N3069 


TO- 18 


•50 1 


1 




30 




9.5 


30 


1000 


2 


10 


30 


1 


2.5 


30 


80 


30 


15 





-12 


1.5 


30 





125 


1000 




2N3070 


TO- 18 


•50 1 


1 




30 




4.5 


30 


1000 


0.5 


2.5 


30 


0.75 


2.5 


30 


30 


30 


15 





-8 


1.5 


30 





125 


1000 




2N3368 


TO- 18 


•40 1 


5 




30 




11.5 


20 


1000 


2 


12 


30 


1 


4 


30 


80 


30 


20 


8 





3 


30 









! 


2N 3369 


TO- 18 


•40 1 


5 




30 




6.5 


20 


1000 


0.5 


2.5 


30 


0.6 


2.5 


30 


30 


30 


20 


8 





3 


30 









t 


2N3370 


TO 18 


•40 1 


5 




30 




3.2 


20 


1000 


0.1 


0.6 


30 


0.3 


2.5 


30 


15 


30 


20 


8 





3 


30 









: 


2N3436 


TO-18 


•50 1 


0.5 




30 




9.8 


20 


1000 


3 


15 


20 


2.5 


10 


20 


35 


30 


18 





-10 


6 


30 





100 


1000 




2N3437 


TO- 18 


•50 1 


0.5 




30 




4.8 


20 


1O0O 


0.8 


4 


20 


1.6 


6 


20 


20 


30 


18 





-6 


6 


30 





100 


1000 


5 


2N3438 


TO-18 


•50 1 


0.5 




30 




2.3 


20 


1000 


0,2 


1 


20 


0.8 


4.6 


20 


5 


30 


18 





-4 


6 


30 





100 


1000 




2N3458 


TO-18 


•50 1 


0.25 




30 




7.8 


20 


1000 


3 


15 


20 


2.5 


10 


20 


35 


30 


18 





-10 


5 


30 





225 


20 




2N3459 


TO-18 


•50 1 


0.25 




30 




3.4 


20 


1000 


0.8 


4 


20 


1.6 


6 


20 


20 


30 


18 





-6 


5 


30 





155 


20 




2N3460 


TO-18 


•SO 1 


0.25 




30 




1.8 


20 


1000 


2 


1 


20 


08 


4.5 


20 


5 


30 


18 





-4 


6 


30 





155 


20 




2N3684 


TO-72 


50 1 


0.1 




30 




6 


20 


1 


2 5 


7.5 


20 


2 




20 


50 


20 


4 


20 





1.2 


20 





150 


100 


5 


2N3686 


TO-72 


50 1 


1 




30 




3.5 


20 






3 


20 


1.5 


2.S 


20 




20 


4 


20 





12 


20 





150 


100 


5 


2N3686 


10-72 


50 1 


0.1 




30 


0.6 


2 


20 




0.4 


1.2 


20 


1 




20 


10 


20 


- ! 


20 





1.2 


20 


p 


150 


100 


& 


2N3687 


TO-72 


50 1 


0.1 




30 


03 


1.2 


2C 


? i 


0.1 


0.5 


20 


0.6 


IS 


20 


S' 


20 


* 


20 


o : 


1.2 


20 


Q 


160 


100 


5 


2N3821 


TO-72 


50 1 


0.1 




30 




4 


15 


i 


0.5 


2.5 


15 


1.5 


4.5 


16 


10 


15 


6 


15 





3 


15 





200 


10 


5 


2N3822 


TO-72 


50 1 


0.1 




30 




6 


15 


.5 


2 


10 


15 


3 


6.5 


15 


20 


15 


6 


15 





3 


16 





200 


10 


5 


2N3967 


TO-72 


30 1 


0.1 




20 


2 


5 


20 


1 


2.5 


10 


20 


2.5 




20 


35 


201 


5 


20 


1 


1.3 


20 


1 


84 


100 


5 


2N3967A 


TO-72 


30 1 


0.1 




20 


2 


5 


20 


1 


2.5 


10 


20 


2.5 




20 


35 


201 


5 


20 


1 


1.3 


20 


• 


160 


10 


6 


2N3968 


TO-72 


30 1 


0.1 




20 




3 


20 


1 


1 


5 


20 


2 




20 


15 


20" 


5 


20 




1.3 


20 


t 


84 


100 


5 


2N3968A 


TO-72 


30 1 


0.1 




20 




3 


20 


1 


1 


5 


20 


2 




20 


15 


20" * 


5 


20 




1.3 


20 


t 


160 


10 


5i 


2N3969 


TO-72 


30 1 


0.1 




20 




1.7 


20 


1 


0.4 


2 


20 


1.3 




20 


5 


20tt 


5 


20 


tt 


1.3 


20 


1 


84 


100 


51 


2N3969A 


TO-72 


30 1 


0.1 




20 




1.7 


20 


1 


0.4 


2 


20 


1.3 




20 


5 


2011 


5 


20 


tt 


1.3 


20 


1 


160 


10 


5i 



»l D = 1mA t| D = 5 (K>A Hd = 250mA 6I d =100hA "Id-IOOmA tT t p = 40m A 



N-Channel FETs 



GENERAL PURPOSE AMPS (Continued) 



Transistor 
Type 


Case 
Style 


BV GSS 
*BV GD0 

IV) <9> l G 
Min IjiAI 


InAI 
Max 


'gss 

DGO 
@ V DG 
IVI 


Min 


V P 

IV) @ 
Max 


V DS 
IV] 


l D 

InA) 


'dss 

ImA) @> 
Min Max 


VDS 

(V) 


G fs 
Immho) ( 
Min Max 


Vds 

IV) 


G oss 
(limho)@ Vds 
Max IVI 


IpF) <s 
Max 


^iss 

Vds 

(VI 


v G s 

(V) 


(pF) @ 
Max 


v ds 

IV) 


V GS 
IVI 


e 

( =) 

Max 


Freq 
IHzl 


Process 
No. 


Pkg. 
No. 


2N4220 


TO-72 


30 


10 


0.1 




15 




4 


15 


.1 


0.5 


3 


15 


1 4 


15 


10 


15 


6 


15 





2 


15 









55 


25 


2N4220A 


TO-72 


30 


10 


0.1 




15 




4 


15 


.1 


0.5 


3 


15 


1 4 


15 


10 


15 


6 


15 





2 


15 





11b 


100 


55 


25 


2N4221 


TO-72 


30 


10 


0.1 




15 




6 


15 


.1 


2 


6 


15 


2 5 


15 


20 


15 


6 


15 





2 


15 









55 


25 


2N4221 A 


TO-72 


30 


10 


0.1 




15 




6 


15 


.1 


2 


6 


15 


2 5. 


1 5 


20 


15 


6 


1 5 





2 


15 


o 


1 1 5 


100 


55 




2N4222 


TO-72 


30 


10 


0.1 




15 




3 


15 


1 


5 


15 


15 


2.5 6 


15 


40 


15 


6 


15 





2 


15 









55 




2N4222A 


TO-72 


30 


10 


0. 1 




15 




g 


1 5 


1 


6 


15 


15 


2.5 6 


1 5 


40 


15 


6 


15 


o 


2 


15 


o 


1 15 


100 


55 




2M4338 


TO- 18 


50 




0.1 




30 


0.3 




15 




0.2 


0.6 


15 


6 18 




5 


15 


y 




q 


3 




o 


68 


1000 


52 


02 




TO 18 


50 








30 


0.6 




15 




0.5 


1.5 


15 




15 


15 


15 




15 




3 














/N4J4U 




50 


■ 






30 




3 


15 


100 


1.2 


3.6 


15 


1.3 3 


15 


30 


15 


7 


15 







15 










02 


-C' * H*>H 1 


TO 18 


50 


1 


1 




30 










3 


9 








60 


15 










15 






1000 






9MC1 rfi 
■tWNJ 3 1 UJ 




25 


10 






15 




4 








g 


15 


2 8 


15 


100 


15 




15 











100 








Zl v D 1 uh 




25 








15 










2 


g 








100 


15 






















2N51 05 




25 








1 5 




4 






5 


15 


15 


5 10 


15 


100 


15 


5 


15 


o 


1 


15 


o 






50 


25 


OKI CTCa 


TO-72 






0.1 






0.5 


3 


15 


100 






15 


1 3 


15 


10 


15 


6 


15 






15 






100 


55 




2N5359 


TO-72 


40 


1 


0.1 




20 


0.8 


4 


1 5 


100 


0.6 


1.6 


15 


1 2 3.6 . 


15 


10 


15 


6 


15 





2 


15 













2N5360 


TO-72 


40 




0. 1 




20 


0.8 


4 


15 


100 


0.5 


2.5 


15 


1.4 4.2 


15 


20 


15 


6 


15 





2 


15 












2N5361 




40 




0. 1 




20 


1 


6 


15 


100 


2.5 


g 


15 


1.5 4.5 


16 


20 


15 


6 


1 5 





2 


15 















TO 72 


40 








20 






15 


100 


4 


8 


15 


2 5.5 


1 5 


40 


15 


6 


15 
















25 




TO-72 


40 








20 


25 








7 


14 








40 


15 


g 




o 


2 






1 15 


100 


55 


25 


2MS364 


TO-72 


40 








20 










9 


18 




•>7 6 5 




60 


15 


g 






2 


15 




1 15 


100 


55 


25 


2N5457 




25 








15 










1 


5 








50 


15 


-j 




o 


3 


15 


o 






55 


72 


2N5458 


TO-92 


25 




1 




15 


1 


7 


15 


10 


2 


9 


15 


15 5.5 


15 


50 


15 


7 


15 





3 


15 









55 


72 


2N5459 


TO-92 


25 




1 




15 


2 


8 


16 


10 


4 


lb 




2 8 


16 ; 


50 


15 




16 





NHS 


<tSi 









56 


72 


2N5556 


TO-72 


30 




0.1 




15 


0.2 


4 


15 


1 


0.5 


2.5 


15 


1-5 6.5 


15 


20 


15 


6 


15 





3 


15 





36 


10 


50 


25 


2N5557 


TO-72 


30 




0.1 




15 


0.8 


5 


15 




2.0 


5.0 


15 


1-5 6.5 


15 


20 


15 


6 


15 





3 


15 





35 


10 


50 


25 


2N5558 


TO-72 


30 




0.1 




15 


1.5 


6 


15 


1 


4 


10 


15 


1-5 6.5 


15 


20 


15 


6 


15 





3 


15 





36 


10 


50 


25 


J201 


TO-92 


40 




0.1 




20 


0.3 


1.5 


20 


10 


0.2 


1.0 


20 


0.5 


20 


tl 


20 


t5 


20 





12 


20 





no 


1k 


52 


72 


J202 


TO-92 


40 




0.1 




20 


0.8 


4.0 


20 


10 


0.9 


4.5 


20 


1.0 


20 


13.5 


20 


15 


20 





t2 


20 





110 


Ik 


52 


72 


J203 


TO-92 


40 




0.1 




20 


2.0 


too 


20 


10 


4.0 


20 


20 


1.5 


20 


no 


20 


15 


20 





12 


20 





110 


1k 


52 


72 


J210 


TO-92 


25 




0.1 




15 


1 


3 


15 


1 


2 


15 


15 


4.0 12.0 


15 


150 


15 


t5 


15 





11.5 


15 





no 


1k 


90 


72 


J211 


TO-92 


25 




0.1 




15 


2.5 


4.5 


15 


1 


7 


20 


16 


70 12.0 


16 


200 


t5 


tS 


15 





tl.5 


15 





no 


1k 


90 


72 


J212 


TO-92 


25 




0.1 




15 


4 


6 


15 


■1 ' 


15 


40 


15 


7.0 12.0 


15 


200 15 


T5 


'5 





et.5 


15 





110 


Ik 


90 


72 


MPF103 


TO-92 


25 




1 




15 




6 


15 


1 


1 


5 


15 


1 5 


15 


50 


15 


7 


• 15 ! 





3 


15 









55 


72 


MPF104 


TO-92 


25 




1 




15 




7 


15 


1 


"1 


9 


16 


1.5 5.5 


15 


50 


ii 


7 


15 





3 


15 









55 


72 


MPF105 


TO-92 


25 




1 




15 




8 


15 


1 


4 


16 


15 


2 6 


15 


50 


16 


7 


15 





3 


15 









55 


72 


MPF109 


TO-92 


25 


10 


1 




15 


0.2 


8 


15 


10 


0.5 


24 


15 


0.8 6 


15 


75 


15 


7 


15 





3 


15 





115 


1000 


55 


72 



JFET Selection Guide 




N-Channel FETs 



GENERAL PURPOSE AMPS (Continued) 



Transistor 
Type 



Case 
Style 



BV G SS 

bvgdo 

IVI 9 l G 
Min IvA) 



'GSS 

'DGO 
InAI <e> Vqg 
Max IV) 



IVI 9 V DS l D 
Min Max (VI InAI 



'dss 

(mAI S> VDS 
Mm Max IVI 



Gfs 

(mmhol @ Vqs 
Mm Max (VI 



(nmhol@ Vqs 
Max (V) 



(pFI @ V DS 
Max (VI 



VQS 
(VI 



(pfi e v DS 

Max (VI 



VGS 
IVI 



( =v 



/@ Freq 
Max (Hzl 



Pkq. 
No. 



MPF111 
MPF112 
PN3684 
PN 3685 



TO-92 
TO-92 
TO-92 
TO-92 



20 
28 
50 




PIM4220 


TO-92 


30 


PN4221 


TO-92 


30 


PN4222 


TO-92 


30 


PN4302 


TO-92 


30 


PN4303 


TO-92 


30 


PN4304 


TO-92 


30 


PN5163 


TO-92 


25 


TIS58 


T092 


25 


TIS59 


TO-92 


25 



1 00 

loe 



10 


0.5 


10 


10 


10 


0.5 


10 


10 


30 


2 


5 


20 


30 




3 5 


20 



1000 
1000 

1 



0.4 
0.5 



6 

8 

4 

6 

10 

8 



1 
I 
1 

10 

10 
10 

1000 

20 

20 



0.5 


3 


15 


1 


2 


6 


15 


2 


5 


15 


15 


2.5 


0.5 


5 


20 


1 


4 


10 


20 


2 


0.5 


15 


20 


1 


1 


40 


15 


2 


2.5 


8 


15 


1.3 


6 


25 


15 


1.3 



10 
20 
40 
50 
50 
50 
200 



6 
6 
6 
6 
12 



15 
15 
15 
20 
20 
20 
15 
15 
15 









2 mA 
2 mA 






150 


20 




150 


20 




150 
150 




: 


20 


D 























100 


1000 





100 


1000 





125 


1000 





50 


1000 



52 
62 
52 
52 

55 
55 
55 
52 
52 
52 



2 mA 
2 mA 



S3 



N-Channel FETs 



GENERAL PURPOSE DUAL JFETs 









OPERATING CONDIT 


IONS FOB THESE CHARACTERISTICS 






































Type 
No. 


Case 

Style 


OP. CHAR. 
V DG l D 
(VI l„AI 


IVgsi-2 

v s 

ImVI 
Max 


DRIFT 

i|iV/"CI 
AV GS 
Ma. 


'g 

(pA, 
Max 


Min Max 


G oss CMRR 
Ijjmho) (dBI 
Max Min 


(V) 
Mm Max 


Mm 


vp 

VI 

Max 


'dss 

(mA) 
Min Max 


(mmhol 
Mm Max 


G 0SJ 
Ik mho I 
Max 


'GSS 
IpAl gj VpQ 
Max IV) 


c, M 

(pFI 
Max 


*-rsS 
(pFI 
Max 


BV 
(V) 
Min 


_"n 
(nV/v'H/) IP 
Max 


f 

(Hzl 


'DSS 
Match 

% 


Gf, ComIZ 
Match (^mho) 

% 


'Gl 'G2 
125 C 
inA) 


Process 
No. 


Pkg. 

No. 


2N3921 


TO-71 


10 


700 


5.0 


10 


250 


1500 


20 






-3.0 


10 10 


15 7,5 


35 


1000 


30 


18 


60 


50 


100 


1.0k 




5,0 




83 


12 


2N3922 


TO-71 


10 


700 


5.0 


25 


250 


1500 


20 






3.0 


1.0 10 


1.5 75 


35 


1000 


30 


18 


6.0 


50 


100 


1.0k 




5.0 




83 


12 


2N3934 


TO 71 


10 


200 


5.0 


10 


100 


300 


5.0 






See ?N 3954-6 as an improved replacement 






















12 


2N3935 


T0-71 


10 


700 


50 


25 


100 


300 


6.0 






Se 


i* 2N 3954-6 J 




























12 


™ 


10 71 


20 


700 


5.0 


5.0 


50 






0.5 40 


1 


* 5 


0.5 50 


1 3.0 


36 


100 


30 


4.0 


1.2 


50 


160 


100 


50 




10 


83 


12 


2N24K4 


TO 71 


20 


200 


5.0 


10 


50 






5 .0 




4.5 




1.0 30 


35 


100 


30 


4.0 


1.2 


50 


150 


100 






10 


83 


12 


2N39S5A 


TO 71 


20 


200 


50 




50 














10 3 




100 


30 


4.0 


1 2 


50 


150 


too 


5.0 


3.0 




83 


12 


?N38SC 


TO 71 


20 


200 


10 


25 


50 






5 4 






05 90 


1.0 3.0 




100 


30 


4.0 


1.2, 


50 


ISO 


100 


5,0 


50 


to 


S3 


12 


2N3956 


T071 


20 


200 


16 


SO 


50 






5 4 


1 


4 5 


0.5 50 


10 30 


35 


100 


30 


4:0 


1.2 


50 


150 


100 


5.0 


50 


10 


83 


12, 


2N39S7 


TO-71 


20 


200 


20 




50 






5 4.0 


to 


4 5 


0.5 5.0 






100 


30 


4.0 


12 


50 


150 


100 






10 


83 


12 


2N:1958 


TO-71 


30 


700 25 


TOO 










1.0 


4.5 


0.5 6.0. 




















83 ' 


12 


2N40B2 


TO-71 


10 


200 


15 


10 


100 


300 


10 






See 2N3954-6 as an improved replacement 






















12 


2N4083 


T0-71 


10 


2O0 


15 


25 


100 


300 


10 






See 2N3954 6 a 


, ..n irni.Mwi'd ii'pl.ictfm 
























12 


2N4084 


TO 71 


10 


700 


15 


10 


250 


1500 


20 


0.5 4,0 




30 


1.0 10 


1.5 7,5 


35 


1000 


JO 


18 


6.0 


50 


100 


1.0k 




5.0 




83 


12 


2N4085 


TO-71 


10 


700 


15 


25 


250 


1500 


20 






3.0 


1.0 10 


1.6 7.5 


35 


1000 


30 


18 


6.0 


50 


100 


1 0k 




50 




83 


12 



2N5045 
2N5046 
2N5047 
2N5196 
2N5197 
2N5198 
2N51W 
2N5452 
2N 5453 
2Nb454 
2N5545 
2N554S 
2N5M7 
2N5561 
2N5562 
2N5563 
J401 
J402 
J403 
J404 
J405 
J406 
J4l0 
J411 
J41? 
NPO8301 
NP 08302 
NPD8303 
NPO9801 
NPD9802 
NPD9803 
U231 
U232 
U233 
U234 
U235 
U401 
U402 
U403 
U404 
U405 
U406 



N-Channel FETs 



GENERAL PURPOSE DUAL JFETs (Continued) 




8-Pin 


























PROCESS IN DEVELOPMENT 
















Mim- 














































DIP 
















































8Pm 


20 


200 


10 


10 


250 




1200 




3 


4 


0.5 


3.5 






20 


2f<0 


20 


4,5 




40 


50 


100 




Mini- 


20 


200 


25 


25 


250 


600 


1200 


5 


3 


40 


05 


3.5 


05 6 


1 4 


20 


250 


20 


4 5 


1.2 


40 


50 


100 




DIP 


20 


200 


40 


80 


250 


600 


1200 


5.D 


03 


4.0 


05 


3.5 


05 6 


1 4 


20 


250 


20 


4 5 


1 2 


40 


50 


100 




8-Pin 


20 


200 




10 


100 


700 


1200 


50 


03 


4.0 


05 


35 


0.5 6 


1 4 


20 


100 


2U 


4 5 


1 2 


40 


50 


100 






20 


200 


10 


15 


100 


700 


1200 


5.0 


OJ 


40 


0.5 


3.5 


5 6 


1 4 


20 




20 


4.5 


1 2 


40 


50 


100 




DIP 


70 


200 




20 


100 


700 


1200 


s.o 


03 


CO 


0.5 


3.5 


05 6 


1 4 


20 


100 


20 


45 


1 2 


40 


50 


100 






























PROCESS IN DEVELOPMENT 
















TO- 71 


SO 


200 


5.0 


10 


50 


BOO 




10 


0.3 


4.0 




See2N3954 as a 


i improved replacement 


















TO 71 


20 


200 


10 


25 


50 


600 




10 


0.3 


4.0 




See 2N3955 a* a 


r> improved replacement 


















TO-71 


20 


200 


15 


50 


to 


BOO 




10 


0.3 


4.0 




See 2N 3956 as an improved replacemen 


















TO- 71 


20 


200 


20 


75 


50 


BOO 




10 


0.3 


4.0 




See 2N3957 as an improved replacemen 


















TO-71 


20 


200 


25 


100 


50 


600 




10 


0.3 


■1 




See 2N 3958 as .in improved replacemen 


















TO-71 














































TO-71 
















































TO-71 


























PROCESS IP 


DEVELOPMENT 


















TO-71 














































TO-71 














































TO-71 















































epmo uoipaias 13df 



JFET Selection Guide 



2 



N-Channel FETs 



LOW FREQUENCY— LOW NOISE DUAL J FETs 







OPERATING CONDITIONS FOR THESE CHARACTERISTICS 










































Typ« 

No. 


Cm* 
Style 


OP. CHAR. 

v DG 'd 

(V) (»A! 


"VGS1-2 1 

Vos 

ImV) 
Max 


DRIFT 

iuV/'CI 

*V G S 
Max 


*G 
IpA) 
Max 


Mm Max 


(nmho) 
Max 


CMRR 
IdBI 
Min 


(VI 

Min 


Mai 


Vp 

IV 

Mm 


Mjk 


'dss 

ImAI 
Min Max 


lumbal 
Mm Max 


(umhol 
Max 


'gss 

IpAl $ V DG 
Max (VI 


IpF) 
Max 


C rfc 
IpFi 
Max 


BV 

IV) 
Min 


(nVK Hi) 9 1 
Max (H*l 


'dss 

Match 

% 


Gf. 
Match 

X 


G<w»1-2 
Umho) 


>G1 'G2 
125°C 
(nA) 


No. 


Pk«. 
No. 


2N5515 


TO-71 


20 


700 


5.0 


5.0 


100 


500 


1000 


1.0 


100 


0.2 


3.8 


0.7 


4.0 


0.5 


7.5 


1.0 


4.0 


10 


250 


30 


+25 


+5.0 


40 


30 10 


5.0 


3.0 


0.1 


10 


95 


12 


2N5516 


TO-71 


20 


200 


5.0 


10 


100 


500 


1000 


1.0 


100 


0.2 


3.8 


0,7 


4.0 


0.5 


7 5 


1.0 


4 


10 


250 


30 


+25 


+5,0 


40 




10 


5.0 


3.0 


0.1 


10 


95 


12 


2N6517 


TO-71 


20 


200 


10 


20 


100 


500 


1000 


1.0 


90 


0.2 


:ia 


0.7 


4.0 


0,5 


7.5 


1.0 


4.0 


10 


250 


30 


+25 


+5.0 


40 




10 


5.0 


5.0 


0.1 


10 


95 


12 


2N5518 


TO-71 


20 


200 


15 


40 


100 


500 


1000 


1.0 




0.2 


3.8 


0.7 


A (1 


0.5 


7.5 


1.0 


■10 


10 


250 


30 


+25 


+5.0 


40 




10 


5.0 


5.0 


0.1 


10 


95 


12 


2N5519 


TO-71 


20 


200 


15 


80 


100 


500 


1000 


1.0. 




0.2 


3.8 


7 


A 


0.5 


J b 


1.0 


4.0 




250 


30 


+25 


+5.0 


40 




10 


10 


10 


0.1 


10 


95 


12 


2N6520 


TO-71 


20 


;oo 


50 


5.0 


100 


500 


1000 


1.0 


100 


0.2 


3.8 


0.7 


4 


0.5 


7.5 




4.0 




250 


30 


♦26 


♦5.0 


40 


1 


5 10 


50 


30 


0.1 


10 


95 


12 


2N5521 


TO-71 


20 


200 


50 


10 


100 


500 


1000 


1.0 


100 


0.2 


3.8 


7 


4 


0.5 


7.6 


1.0 


4.0 


10 


250 


30 


+26 


♦6.0 


40 




10 


50 


30 


0.1 


10 


95 


12 


2N5522 


TO-71 


20 


700 


10 


20 


100 


500 


1000 


1.0 


90 


0.2 


38 


07 


4.0 


0.5 


7.6 


1.0 


4.0 


10 


250 


30 


♦25 


♦5.0 


40 




10 


5.0 


6.0 


0.1 


10 


95 


12 


2N5523 


TO-71 


20 


200 


16 


40 


100 


500 


1000 


1.0 




0.2 


34 


0.7 


4,0 


0.5 


7.5 


1.0 


4.0 


10 


260 


30 


♦26 


• 6.0 


40 




10 


5.0 


5,0 


0.1 


10 


96 


12 


2N5524 


TO-71 


20 


200 


16 


80 


100 


S00 


1000 


1.0 




0.2 


3.8 


0,? 


4.0 


0.5 


7.5 


1.0 


4.0 


10 


250 


30 


♦26 


♦6.0 


40 




10 


10 


10 


0.1 


10 


95 


12 


2N8483 


TO-71 


20 


200 


5.0 


5.0 


100 


600 


1500 


1.0 


100 


0.2 


3.8 


07 


4.0 


0.5 


7.5 


1 


4 


10 


200 


30 


20 


3.5 


50 


10 10 


5.0 


3,0 


0.1 


10 


96 


12 


JN&4&4 


TO-71 


20 


200 


10 


10 


100 


500 


1500 


1.0 


100 


0.2 


38 


0.7 


4.0 


0.5 


7.5 


10 


4.0 


10 


200 


30 


20 


3,5 


50 






5.0 


3.0 


0.1 


10 


95 


12 



































































































N-Channel FETs 



WIDE BAND-LOW NOISE DUAL JFETs 



Type 
No. 


Cat* 
Styla 


OPERATING CONDITIONS FOR THESE CHARACTERISTICS 


v P 

(V) 
Mm Max 


■dss 

(mA) 
Mm Max 


Of. 

Uml.u) 

Mm Max 


lumhol 
Max 


'gss 

IpA) V DG 
Max 9 (V) 


C lK 
IpF) 
Max 


C rM 
IpFI 
Ma* 


BV 

(VI 
Mm 


(nV/v'Hzlgi 
Max 


) 

(Hi) 


■dss 

Match 
% 


Match 

% 


Goisl 2 

(Mmht)) 


l Gl'G2 
125^ 
(nAI 


No. 


Pkg. 
No. 


OP. CHAR. 

V D G 'd 
IV} (»A> 


'VGS1 2' 

vos 

(mVI 
Max 


DRIFT 

l^v/'ci 

AV GS 

Max 


'G 
IpA) 
Max 


timho* 
Mm Mai 


G OM 
(jimhol 
Max 


CMRR 
IdBI 
Mm 


V 9S 
(Vt 
Mm Max 


2N5564 


TO-71 


15 


2000 


50 


10 




7500 


45 









3.0 


5.0 


30 






100 


20 


12 


3.0 


40 


50 


10 


50 


6.0 






96 


12 


2N5565 


TO-71 


15 


2000 


10 


25 




7600 


45 






0.5 


3.0 


5.0 


30 






100 


20 


12 


3.0 


40 


50 


10 


so 


10 






96 


12 


2N6566 


TO-71 


15 


2000 


20 






7500 


45 






0.5 


3.0 


50 


30 






100 


20 


12 


3.0 


40 


50 


10 


50 


10 






96 


12 


2N56T1 


TO- 78 


10 


5000 




20 


100 


5000 10.000 


too 




0.3 4,0 




5.0 


7.0 


40 






100 


15 


5.0 


1.2 


25 


20 


10k 


50 


5.0 


20 


20 


93 


24 


2N5913 


TO-78 


10 


5000 




40 


100 


5000 10.000 


100 




0.3 4.0 


1.0 


5.0 


7.0 


40 






100 


16 


5.0 


1.2 


25 


20 


IG. 


5.0 


5.0 


20 


20 


93 


24 


NPD5564 


8-Pm 




2000 


50 


10 




7500 


45 






05 


3.0 


5 


30 






100 


20 


12 


3.0 


40 


50 


10 


50 


50 






96 


67 


NPD5565 




15 


2000 


10 


25 




7500 


45 






0.5 


3.0 


5 


30 






100 


20 


12 


3.0 


40 


50 


10 


50 


10 






96 


87 


NPD5566 


DIP 


IB 


2000 


20 


50 




7500 


45 






o ■> 


30 


5.0 


30 






100 


20 


12 


3 


40 


50 


10 


5.0 


10 






96 


67 


U257 


TO 78 


10 


5000 


100 






5000 10.000 


150 






1.0 


5.0 


5.0 


40 






100 


15 


5.0 






30 


10k 


15 


15 


20 




93 


24 































N-Channel FETs 




HV DG =35V 



S3 



N-Channel FETs 



ULTRA LOW LEAKAGE DUALS 







OPERATING CONDITIONS FOR THESE CHARACTERISTICS 


































Type 
No. 


Case 
Style 


tvj 


Op*f 
Cond. 

>D 

(mAI 


VGST-2 

v s 

tmV) 
Max 


DRIFT 

(nV/ a C) 
Max 


'G 
IpA) 
Max 


Gh 
(niMho) 
Min 


Go« V GS 
l„Mho) (V) 
Max Min 


Mix 


MiD 


(V> 


Max 


■dss 

ImA) 

Min 


Max 


Gf. 
(mmho) 
Min Max 


{fimho} 
Max 


(pA) 
Max 


'gss 
@> v GS 

IVl 


fpFI 
Max 


c rss 
IpR 
Max 


bv gss 

(V) 


'GHG2 
@ 125"C 
InAI 


Process 
No. 


Pk B . 

No. 


2N5902 


TO-78 


10 


30 


5 


5 


a 


50n 


1 


4 


0.6 




4.S 


30v 


0.5 


70*i 


0.25 


5 ' 


5 


20 


3 


1.5 


40 


7 


84 


24 


2N5903 


TO- 78 


10 


30 


5 


10 


3 


50„ 


1 


■I 






4,5 


30n 


O.b 


70n 


0.25 


5 


5 


20 


3 


1.5 


40 




84 


24 


2N5904 


TO-78 


10 


30 


10 


20 


3 


50fJ 


1 


4 


0.6 




4.5 


30v 


0.5 


70n 


0.25 


5 


5 


20 


3 


1.5 


40 




84 


24 


2NS906 


TO 78 


10 


30 


1 5 


40 


a 


50^ 




4 


O.G 




4 5 


30,j 




70^ 








20 




1.5 


40 




84 


24 


2N5906 


. TO 78 


10 


30 


6 






50/j 


1 


4 


0.6 




4.5 


30u 












20 




1.5 


40 


0.2 


84 


24 


2NS90? 


TO 78 


10 


30 


6 


10 




50*. 




4 


0.6 




4.5 


30n 












20 




1.5 


40 


0.2 


84 


7a 


2N5908 


TO 78 


10 


30 


10 


20 




&0fi 




4 


0.6 




4.6 


30*; 


0.5 


70n 


0.26 


5 


2 


20 


3 


1.5 


40 


02 


84 


74 




TO- 78 


10 


30 


1!> 


10 


i 




1 


4 


0.6 




4 


30* 


O'i 


70*i 


0^5 




2 


20 


3 


1.5 


40 


0.2 


84 


2 4 


U431 


T078 














































86 


74 


U42? 


TO-78 














































86 


24 


U423 
U424 


TO-78 
TO 78 


















PROCESS IN DEVELOPMENT 


















86 
86 


24 
24 



_ 








00 



JFET Selection Guide 



P-Channel FETs 




2N3382 
2N3384 
2N3386 
2N3993 
2N3993A 
2N 3994 
2N3994A 
2N5018 
2N5019 
•2N6114 
•2N5115 
•2N5I1B 
J174 
J176 
JI76 
J177 
P1086E 
P1087E 
U304 
U305 
U306 



TO-72 
TO-72 
TO-72 
TO-72 
TO-72 
TO-72 
TO-72 
TO- 18 
TO-18 
TO- 18 
TO-18 
TO-18 
TO-92 
TO-92 
TO-92 
TO-92 
TO-92 
TO-92 
TO-18 
TO-18 
TO-18 



15 
20 
20 
20 
20 
20 
20 
20 
20 
20 
20 
20 
20 



10 


-15 


10 




10 


-15 


.01 


10 




15 


76 


10 


-15 


5 




5 


-15 


.01 


5 




15 


150 


0.5 


-15 


12 


5 


10 


15 




30 


90 


15 


85 






7 


3 


4 


15 




15 


60 


15 


110 






6 


1 


4 


15 




5 


25 


15 


175 



45 
45 
27 
27 
27 



-15 
-15 
-15 
-15 




WM 

-16 
-15 
-16 
-15 
-16 



Note. JAN qualified per appl 



AMPLIFIERS 



icable MIL-S-19500 specification 




P-Channel FETs 



Transistor 
Type 


Case 
Style 


BVGSS 
BV GD0 
IVl @ l G 
Min IjjAI 


InAI 
Max 


'GSS 
DGO 

e v DG 

(V) 


IVl 

Min Max 


V P 

e v DS 

IVl 


l D 

IvAl 


'DSS 
ImAI IT 
Min Max 


vos 

(VI 


Gfs 
(mmho) 
Min Max 


@V DS 
IVl 


Goss 
Umhol@ Vds 
Max IVl 


IpF) 
Max 


Ciss 

Vds 

(VI 


vgs 

(VI 


IpFI 
Max 


c rss 

Vds 

IVl 


vgs 

IVl 


/ NV 

MS 

Max 


«n 

/@ Freq 
IHll 


Process 
No. 


Pkg. 
No. 


• 2IM2608 


TO-18 


30 


1 


10 


30 


1 4 


-5 


1 


0.9 


4.5 


6 


1 




5 






17 


-5 










125 


1000 


89 


11 


2N2609 


TO-18 


30 


1 


30 


30 


1 4 


-6 


1 


2 


10 


5 


2.5 




5 






30 


-5 










125 


1000 


88 


11 


2N3329 


TO-72 


20 


10 


10 


10 


5 


-15 


10 


1 


3 


10 


1 


2 


10/lmA 


20 


10 


20 


-10 










125 


1000 


89 


23 


2N3330 


TO-72 


20 


10 


10 


10 


6 


-15 


10 


2 


6 


10 


1.5 


3 


10/2mA 


40 


10 


20 


-10 










125 


1000 


89 


23 


2N3331 


TO-72 


20 


10 


10 


10 


8 


-15 


10 


5 


15 


10 


2 


4 


10/5mA 


100 


10 


20 


-10 










155 


1000 


89 


23 


2N3332 


TO-72 


20 


10 


10 


10 


6 


-15 


10 


1 


6 


10 


1 


2.2 


10/lmA 


20 


10 


20 


-10 










65 


1000 


89 


23 


2N4381 


TO-18 


25 


1 


1 


15 


1 5 


-15 


1 


3 


12 


15 


2 


6 


15 


75 


15 


20 


-15 





5 


-15 





20 


1000 


89 


11 



Note. JAN qualified per applicable Ml L-S-19500 specification 




P-Channel FETs 



AMPLIFIERS (Continued) 



Transistor 
Type 


Case 
Style 


bvqss 
BVgdo 
ivi e i G 

Mm lnAI 


>GSS 

'dgo 

InA] @ V D Q 
Max IVI 


Mm 


IVI 

Max 


V P 

@ v DS Id 

(VI lnAI 


loss 

ImAI 
Min Max 


e v DS 

(VI 


Gfs 
Imnho] 
Min Max 


@V D S 
IVI 


G oss 
(fjmhol @ Vds 
Max IVI 


IpFI 
Max 


^iss 

Vds 

(VI 


v G s 

(VI 


IpFI 
Max 


Crss 

Vds 

(VI 


v G s 

IVI 


/ NV 

\M 

Max 


)@ Freq 
IMil 


Process 
No. 


Pkg. 
No. 


2N5020 


TO- 18 


25 


1 


1 15 


0.3 


1.5 


-15 1 


0.3 


1.2 


15 


1 


3.5 


15 


20 


15 


25 


-15 





7 


-15 





30 


tooo 


89 


11 


2N5021 








1 15 


0.5 


2.5 






3.6 


15 


1.5 


6 




20 


15 


25 


-15 





7 


-15 





30 


1000 


89 


11 


2N5460 


TO-92 


40 


10 


5 20 


0.75 


6 


16 1 


1 


5 


15 


1 


4 


15 


50 


15 


7 


-15 





2 


-15 





115 


100 


89 


71 


2N5461 


TO-92 


40 


10 


5 20 


1 


7.5 


-15 1 


2 


9 


15 


1.5 


5 


15 


50 


15 


7, 


-15 





2 


-16 





115 


100 


89 


71 


2N546? 


TO-92 


40 


10 


5 20 


1.8 


9 


-IB 1 


4 


16 


15 


2 


6 


15 


50 


IS 


7 


-15 





2 


■ 15 





115 


100 


89 


71 


J270 


TO-92 


30 


1 


0.2 20 


0.5 


2.0 


15 .001 


2 


15 


15 


60 


150 


15 


200 


IS 


120 


15 





tS 


IS 





t10 


Ik 


88 


74 


J271 


TO-92 


30 


1 


02 20 


1.5 


4.5 


15 .001 


6 


50 


15 


80 


18.0 




500 


15 


t20 


16 





t5 


15 





110 


Ik 


88 


74 


PN4342 


TO -'J 2 


25 


10 


10 15 




5.5 


-10 1 


4 


12 


10 


2 


6 


10 


76 


10 


20 


-10 







-10 





80 


100 


89 


71 


PN4360 


TO-92 


20 


10 


10 15 


0.7 


10 


-10 1 


3 


30 


10 


2 


8 


10 


100 


10 


20 


-10 





5 


-10 





190 


100 


89 


71 


PN5033 


TO-92 


20 


10 


10 15 


0.3 


2.5 


-10 1 


0.3 


3.5 


10 


1 


5 


10 


20 


10 


25 


-10 





7 


-10 





100 


1000 


89 


71 


U301 


TO-18 


40 


1 


0.1 20 


2.5 


60 


-15 .001 


15 


60 




7 


11 


15 






20 


-15 


7 mA 


5.5 


-15 


5.5 mA 


40 


1000 


88 


11 




Pro-Electron FETs 



AMPLIFIERS 



Type No. 


Case 
Style 


bvqss 
bvgdo 

(VI (e> l G 
Min ImAI 


less 
Idgd 

lnAI@V GD 
Max IVI 


Min 


Vp 

(VI 9 V DS 
Max IVI 


Id 

(nAI 


v GS 

IVI 
Min Max 


@V DS 
IVI 


Id 

InA} 


Min 


loss 

mA) 

Max 


®V DS 
IVI 


Rel^FSI 
(mmhol @ f 
Min Max IMHzl 


Ci„ 
lpFI@V DS 
Typ IVI 


v G s 

(VI 


c r „ 

lpFI@V DS 
Typ IV) 


v G s 

(VI 


BF244A 


TO-92 


30 1 


5 


20 


5 


8 15 


10 


.4 


2.2 


15 


200 


2 


6.5 


15 


3 


6.5 


.001 


4 


20 




1 1 


20 




BF244B 


TO-92 


30 1 


5 


20 


.5 


8 15 


10 


1.6 


3.8 


15 


200 


6 


15 


15 


3 


6.5 


.001 


4 


20 




1.1 


20 




BF244C 


TO-92 


30 1 


5 


20 


.5 


8 15 


10 


3.2 


7.5 


15 


200 


12 


26 


15 


3 


6.5 


.001 


4 


20 




1.1 


20 




BF245A 


TO-92 


30 1 


5 


20 


.6 


8 15 


10 


.4 


2.2 


15 


200 


2 


6.5 


15 


3 


6.5 


.001 


4 


20 




1.1 


20 




BF245B 


TO-92 


30 1 


5 


20 


.5 


8 15 


10 


1.6 


3.8 


15 


200 


6 


15 


15 


3 


6.5 


.001 


4 


20 




1.1 


20 




BF245C 


TO-92 


30 1 


5 


20 


.5 


8 15 


10 


3.2 


7.5 


15 


200 


12 


25 


'.5 


3 


6.5 


.001 


4 


20 




1.1 


20 




BF246A 


TO-92 


25 1 


5 


15 


.6 


14.6 15 


10 


1.5 


4.0 


15 


200 


30 


80 


15 


8 




.001 


11 


15 





3.5 


15 





BF246B 


TO-92 


25 1 


S 


15 


.6 


14.5 15 


10 


3.0 


7.0 


15 


200 


60 


140 


15 


8 




.001 


11 


15 





3.5 


15 





BF246C 


TO-92 


26 1 


6 


15 


.6 


14.5 15 


10 


5.5 


12 


15 


200 


110 


250 


15 


8 




.001 


11 


15 





3.6 


15 





BF247A 


TO-92 


25 1 


5 


15 


.6 


14.5 15 


10 


1.5 


4.0 


15 


200 


30 


80 


15 


8 




.001 


11 


15 





3.5 


15 





BF247B 


TO-92 


25 1 


5 


15 


.6 


14.5 15 


10 


3.0 


7.0 


15 


200 


60 


140 


16 


8 




.001 


11 


15 





3.5 


15 





BF247C 


TO-92 


25 1 


5 


15 


.6 


14.5 15 


10 


5.5 


12 


15 


200 


110 


250 


15 


8 




.001 


11 


15 





3.5 


15 





BF256A 


TO-92 


30 1 


5 


20 








.5 


7.5 


15 


200 


3 


7 


15 


4.5 




.001 








.7 


20 




BF256B 


TO-92 


30 1 


5 


20 








.5 


7.5 


15 


200 


6 


13 


15 


4.5 




.001 








.7 


20 




BF256C 


TO-92 


30 1 


5 


20 








.5 


7.5 


15 


200 


11 


18 


15 


4.5 




.001 








.7 


20 




BC264A 


TO-92 


30 1 


10 


20 


.5 


15 


10 


.2 


1.2 


15 


1000 


2 


4.5 


15 


2.5 




.001 


4.0 


15 


-1 


1.2 


15 




BC264B 


TO-92 


30 1 


10 


20 


.6 


15 


10 


.4 


1.4 


15 


1500 


3.5 


6.5 


16 


3.0 




.001 


4.0 


15 


-1 


1.2 


15 




BC264C 


TO-92 


30 1 


10 


20 


.5 


15 


10 


.5 


1.5 


15 


2500 


6.0 


8.0 


15 


3.5 




.001 


4.0 


15 


1 


1.2 


15 




BC264D 


TO-92 


30 1 


10 


20 


.5 


15 


10 


.6 


1.6 


15 


3500 


7.0 


12.0 


IG 


4.0 




.001 


4.0 


15 


■ 1 


1.2 


15 





NF 

(dBI @ Rq - 1k 

"n" • 

IHzl" 

Max Typ IMHzl 



Process 

No. 



1.5 100 
1.5 100 
1.5 100 



7.5 
40" 
40" 
40' 
40- 



800 
800 
800 
10' 
10- 
10' 
10' 




21 




Process 50 N-Channel JFET 



DESCRIPTION 

Process 50 is designed primarily for RF amplifier 
and mixer applications. It will operate up to 
450 MHz with low noise figure and good power 
gain. These devices offer outstanding performance 
at VHF aircraft and communications frequencies. 
Their major advantage is low crossmodulation and 
intermodulation, low noise figure and good power 
gain. The device is also a good choice for analog 
switching where low capacitance is very important. 



GATE IS ALSO BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


V DS =0V, l G =-1 MA 




-25 


-40 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS = 15V, V GS = 0V 




1.0 


10 


20 


mA 


Forward Trans- 
conductance 


9fs 


V DS = 15V, V GS = 




3.0 


5.5 


7.0 


mmhos 


Forward Trans- 
conductance 


9h 


V DG * 15V, l D = 200 uA 






1.1 




mmhos 


Reverse Gate Leakage 


'gss 


V GS = -20V. V DS = 






-5.0 


-100 


pA 


"ON" Resistance 


'as 


V DS = 100 mV, V GS = 




100 


175 


500 


n 


Pinch Off Voltage 


Vgsioff) 


V DS = 15V, l D = 1 nA 




-0.7 


-3.5 


-6.0 


V 


Output Conductance 


3os 


V DG = 15V, l D = 1 mA, f = 


1 kHz 




10 




umhos 


Feedback Capacitance 


C r $s 


V DG = 15V, V GS = 






0.7 


0.9 


pF 


Input Capacitance 


Ciss 


V DS = 15V, V GS = 






3.5 


4.0 


pF 


Noise Voltage 


e„ 


V DG = 15V, l D = 1 mA, f = 


100 Hz 




8.0 




nV/VHz 


Noise Figure 


NF 


V DG = 15V, l D = 5 mA, 
R G = 1 kS2, f = 400 MHz 






2.2 


4.0 


dB 


Power Gain 




V DG = 15V, l D = 5mA, f = 


400 MHz 




12 




dB 



This process is available in the following device types. "Denotes preferred parts. 
TO-72 (CASE 25) 



2N3823 
2N3966 
2N4223 
2N4224 
2N4416 
'2N4416A 
2N5078 
2N5103 
2N5104 
2N5105 
2N5556 
2N5557 
2N5558 

TO-92 (CASE 72) 

*2N5484 
*2N5485 



*2N5486 
2N5555 
2N5668 
2N5669 
2N5670 

*J304 

*J305 
PN4223 
PN4224 

*PN4416 
PN5163 
MPF102 
MPF106 
MPF107 
MPF110 
MPF111 



TO-92 (CASE 74) 


BC264C 


2N3819 


BC264D 


2N5248 


BF245A 


BF244A 


BF245B 


BF244B 


BF245C 


BF244C 


BF256A 


TIS58 


BF256B 


TIS59 


BF256C 


TO-92 (CASE 77) 


QUALIFIED PER MIL-S-19500 


2N5949 


2N3823JAN, JANTX, JANTXV 


2N5950 


2N4416AJAN, JANTX, JANTXV 


2N5951 




2N5952 




2N5953 




BC264A 




BC264B 





9-2 



Process 50 

COMMON SOURCE COMMON GATE 



Input Admittance Input Admittance 




I - FREQUENCY (MHz) t - FREQUENCY (MHz) 



Forward Transadmittance Forward Transadmittance 




100 200 500 1000 100 200 500 1000 



f - FREQUENCY (MHz) f - FREQUENCY IMHzl 



Output Admittance 



J 1.0 



3 

j oo ' 




























































' 
















b„ 


X 10)- 
























































































-Vgs-0 
ICS) 




















































100 200 500 1000 

I -FREQUENCY (MHz) 



Output Admittance 



S I' 
t- 

t 

ZD 
O 

I 

J 

J o.oi 
™ 1 











































































^ 


,1X10 








































































































-Vos-151 
-V GS = 
(CGI 




















































200 500 1000 

f — FREQUENCY (MHz) 



Reverse Transadmittance Reverse Transadmittance 




I - FREQUENCY (MHz) f - FREQUENCY IMHz) 



9-4 



si 




Process 51 N-Channel JFET 



DESCRIPTION 

Process 51 is designed primarily for electronic 
switching applications such as low ON resis- 
tance analog switching. It features excellent C iss 
f dsion) t,me constant. The inherent zero offset 
voltage and low leakage current make these devices 
excellent for chopper stabilized amplifiers, sample 
and hold circuits, and reset switches. Low feed- 
through capacitance also allows them to handle 
video signals to 100 MHz. 



GATE IS ALSO BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 




V DS = 0V, l G =-1 pA 




-30 


-50 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS - 20V, V GS = 
Pulse Test 




5.0 


65 


170 


mA 


Reverse Gate Leakage 


'gss 


V GS £ -20V, V DS = 






-15 


-200 


PA 


"ON" Resistance 


r DS 


V DS = 100 mV, V GS = 




20 


35 


100 




Forward Trans- 
conductance 


9fs 


V DG = 15V, l D =2mA 






8.5 




mmhos 


Pinch Off Voltage 


Vgs(off) 


V DS = 20V, l D = 1 nA 




-0.5 


-4.5 


-9.0 


V 


Drain "OFF" Current 


'd(off) 


V DS = 20V. V GS =-10V 






15 


200 


PA 


Feedback Capacitance 
Input Capacitance 




V DG = 15V, l D = 5mA,f = 


1 MHz 




3.5 


4.0 


pF 


c iss 


V DS = 15V, l D = 5 mA, f = 


1 MHz 




12 


16 


pF 


Noise Voltage 


e n 


V DG = 15V, l D = 1 mA, f = 


100 Hz 




6.0 




nV/Vfiz 


Turn-On Time 


f on 


V DD = 10V, l D - 6.6 mA 






12 


20 


ns 


Turn-Off Time 


*off 


V DD = 10V, l D = 6.6 mA 






40 


80 


ns 



This process is available in the following device 
types. ".Denotes preferred parts. 



TO-18 (CASE 02) 

2N3970 

2N3971 

2N3972 
"2N4091 
*2N4092 
"2N4093 
*2N4391 
*2N4392 
*2N4393 
"2N4856 

2N4856A 
*2N4857 

2N4857A 
*2N4858 

2N4858A 

2N4859 

2N4859A 

2N4860 

2N4860A 



2N4861 
2N4861A 

TO-72 (CASE 25) 

*NF5101 
*NF5102 
*NF5103 

TO-92 (CASE 72) 

*2N5638 
*2N5639 
"2N5640 

2N5653 

2N5654 
*J111 
*J112 
*J113 
*PF5101 
*PF5102 
"PF5103 
*PN4091 



*PN4092 
*PN4093 
"PN4391 
*PN4392 
*PN4393 
"PN4856 
*PN4857 
"PN4858 
*PN4859 
*PN4860 
*PN4861 

U1897E 

U1898E 

U1899E 

TO-92 (CASE 74) 

BF246A 
BF246B 
BF246C 



TO-92 (CASE 77) 

BF247A 

BF247B 

BF247C 

TIS73 

TIS74 

TIS75 

QUALIFIED PER MIL-S-19500 



2N4091 JAN, 
2N4092 JAN, 
2N4093 JAN, 
2N4856 JAN, 
2N4857 JAN, 
2N4858 JAN, 
2N4859 JAN, 
2N4860 JAN, 
2N4861 JAN, 



JANTX 
JANTX 
JANTX, 
JANTX, 
JANTX 
JANTX, 
JANTX, 
JANTX, 
JANTX, 



JANTXV 
JANTXV 
JANTXV 
JANTXV 
JANTXV 
JANTXV 
JANTXV 



Process 51 



Common Drain-Source 

Transfer Characteristics Transfer Characteristics Parameter Interactions Characteristics 




Normalized Drain 

Resistance vs Drain Resistance vs Bias 

Transfer Characteristics Transfer Characteristics Current Voltage 





Noise Voltage vs 

Frequency Noise Voltage vs Current Turn-On Switching Turn-Off Switching 




9 6 



Process 52 N-Channel JFET 



DESCRIPTION 

Process 52 is designed primarily for low level audio and 
general purpose applications. These devices provide 
excellent performance as input stages for piezo electric 
transducers or other high impedance signal sources. 
Their high output impedance and high voltage break- 
down lend them to high gain audio and video amplifier 
applications. Source and drain are interchangeable. 

■ 



GATE IS ALSO BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 


BVQSS 


VDS = OV, l G = -1 fiA 




-40 


-70 




V 


Voltage 
















Drain Saturation Current 


!DSS 


V DS =20V,V G S = 0V 




0.2 


1.5 


12 


mA 


Forward Transconductance 


9fs 


VDS = 20V, V G S = ov 




1.0 


2.5 


5.0 


mmho 


Forward Transconductance 


Sfs 


V DS = 20V, l D = 200 ^A 






700 




pmlio 


Reverse Gate Leakage Current 


!GSS 


Vqs = -30V, V DS = ov 






-10 




pA 


Drain ON Resistance 


r DS 


V DS = 100 mV, V G S=0V 




250 


400 


2000 


n 


Gate Cutoff Voltage 


VGS(OFF).Vp 


Vqs= 15V, In - 1 nA 




-0.3 


1.0 


-8.0 


V 


Output Conductance 


9os 


Vdg = 15 V, l D = 200 jiA 






2.0 




jumho 


Feedback Capacitance 


Crss 


V DG = 15V, V G S = 0V, f = 


1 MHz 




1.3 


1.8 


pF 


Input Capacitance 


Ciss 


v DG = i5v, v G s = ov, f = 


1 MHz 




5 


6 


pF 


Noise Voltage 


e n 


Vqg f 15V - 'd - 200 fiA, f 


= 1 00 Hz 




10 




nV/x/Hz 




This process is available in the following device types. 
"Denotes preferred parts. 



TO-18 (CASE 02) 


TO-72 (CASE 25) 


TO-92 (CASE 72) 


2N3069 


*2N3684 


*J201 


2N3070 


*2N3685 


*J202 


2N3071 


*2N3686 


*J203 


2N3368 


*2N3687 


*PN3684 


2N3369 


2N3967 


*PN3685 


2N3370 


2N3967A 


*PN3686 


2N3458 


2N3968 


*PN3687 


2N3459 


2N3968A 


*PN4302 


2N3460 


2N3969 


*PN4303 


*2N4338 


2N3969A 


*PN4304 


*2N4339 






*2N4340 






*2N4341 







Process 52 



Transfer Characteristics 




-1 -2 -3 

V GS - GATE-SOURCE VOLTAGE IV) 



Transfer Characteristics 




-I -2 -1 -4 
V GS - GATE-SOURCE VOLTAGE (VI 



Common Drain-Source 
Characteristics 



TYPVusio 
T«.!5"C 


FF) 




i.V 




















-v GS = ov 








ri-L 
















.S--0-25V 
1 — 1 — r— 














V G S--0-5V 






-III' 














V GS - -0.75V 










_V GS --1V_ 


-JU — 




V CS ■ -I-25V 



1 2 3 4 5 

V 0S - DRAIN-SOURCE VOLTAGE (V) 



Transfer Characteristics 



Transfer Characteristics 



Parameter Interactions 



1 

1 

K 

i- 

I 

f 




-1 -2 -3 

V G S - GATE SOURCE VOLTAGE (VI 



1 

< 

I 




VGS(OFF)--1-9V 
| y T A .-55'C 

T A -125'C 

v GS(OFF| • -3-JV 
J^T A --55"C 
T A -25C 
T A = 125 C 



D -1 -2 -3 -4 -5 
V 0S - GATE-SOURCE VOLTAGE (VI 



EC O 
ZJ *" 
V- o 
< 

5< 

< EC 
EC H- 
G9 | 




Vqs - D PULSED 
r DS fii1mA.V GS -lI 

v G s<OFF)evos-i5v 
Mid 



0.1 0.2 OS 1 2 & 10 
VGS(OFF) - GATE CUTOFF VOLTAGE tV> 



Output Conductance vs Drain 
Current 




Transconductance vs Drain 
Current 




0.01 0.1 1 10 

\q - DRAIN CURRENT (mA) 



Channel Resistance vs 
Temperature 































































"I 


S(0 


: F| 


-1 


tv 


















































'a 


SIO 


fl 


-j 


V 




































1 

v D s- 
Vgs- 
i 


■oil 

(IV 


nV 



-7S -25 26 J5 125 175 
T A - AMBIENT TEMPERATURE ( a CI 



Noise Voltage vs Frequency 



Leakage Current vs Voltage 



Capacitance vs Voltage 





I- FREQUENCY (km) 



10 20 30 40 50 
V a,- - DRAIN GATE VOLTAGE (VI 



j 

















— 1 — 1 — 

= 1 MHz 
































































DS' 


15\ 














5| 


1 


































Vb 


r" 


V) 










t, 


s IVoS-5VI 

































-2-4-6 -1 -10 
V G S - GATE-SOURCE VOLTAGE (V) 




Process 53 N-Channel JFET 



DESCRIPTION 

Process 53 is designed primarily for low current 
DC and audio applications. These devices provide 
excellent performance as input stages for sub pico- 
amp instrumentation or any high impedance signal 
sources. 

■ 



GATE IS BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


V DS = 0V, l G =-1 uA 


-40 


-60 




V 


Zero Gate Voltage 
Drain Current 


loss 


V DS = 10V, V GS =0 


0.02 


0.25 


1.0 


mA 


Forward Trans- 
conductance 


9ts 


V DS = 10V, V GS =0 


80 


250 


350 


umho 


Forward Trans- 
conductance 


9f S 


V DG = 15V, l D = 50mA 




120 




umho 


Reverse Gate Leakage 


'gss 


V GS = -20V, V DS = 




-0.3 


-10 


PA 


Pinch Off Voltage 


Vgsioffi 


V OS = 10V, l D = 1nA 


-0.5 


-2.2 


-6.0 


V 


Feedback Capacitance 


c, ss 


V OG = 15V, V GS = 0, f = 1 MHz 




0.85 


1.0 


pF 


Input Capacitance 


Km 


V DS = 15V, V GS = 0, f = 1 MHz 




2.0 


2.5 


pF 


Output Conductance 


9 os 


V DG = 10V, l D = 50,uA 




0.9 


5.0 


iimhos 


Noise Voltage 


e„ 


V DG = 10V, l D = 50 (JA, 
f = 100 Hz 




45 


150 


nV/VPT 



This process is available in 
the following device types. 
"Denotes preferred parts. 

TO-72 (CASE 25) 

2N4117 
*2N4117A 

2N4118 
*2N4118A 

2N4119 
"2N4119A 
*NF5301 




Leakage Current vs 
Voltage 




-0.1 -0.5 -1.0 -5.0 -10 

Vgsmff, - GATE CUTOFF VOLTAGE (VI 



5 10 15 20 25 
Voo - DRAIN-GATE VOLTAGE (VI 





Process 55 N-Channel JFET 



DESCRIPTION 

Process 55 is a general purpose low level audio 
amplifier and switching transistor. Wafer process- 
ing is similar to process 52 but process 55 uses a 
larger geometry. This results in higher Y fs , l D ss. 
and capacitance and lower R DS ( n>- ' s useful 
for audio and video frequency amplifiers and RF 
amplifiers under 50 MHz. It may also be used for 
analog switching applications. 



GATE IS BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 




TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


V DS = 0V, l G =-1 uA 


-40 


-70 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS = 20V, V GS = 


0.5 


5.0 


20 


mA 


Forward Trans- 


9f s 


V DS = 20V, V GS = 


2.0 


4.5 


7.0 


mmho 


conductance 










Forward Trans- 
conductance 


In 


V DG m 15V, l D = 200 MA 




1200 




Mmhos 


Reverse Gate Leakage 


Igss 


V GS = -30V, V DS = 




-10 


-100 


PA 


"ON" Resistance 


r DS 


V DS = 100 mV, V GS = 


140 


250 


600 


n 


Pinch Off Voltage 


Vgsioff) 


V DS = 20V, l D = 1 nA 


-0.5 


-2.0 


-8.0 


V 


Feedback Capacitance 


Crss 


V DG = 15V, V GS = 0, f = 1 MHz 




1.5 


2.0 


pF 


Input Capacitance 


c lss 


V DS = 15V, V GS =0, f = 1 MHz 




6.0 


7.0 


pF 


Output Conductance 


9os 


V DG = 15V, l D = 200 mA 




2 




/imhos 


Noise Voltage 




V DG = 15V, l D = 200 /iA, f = 100 Hz 




10 




nV/vTlz 



This process is available in the following device 
types. "Denotes preferred parts. 



TO-18 (CASE 02) 

2N3436 
2N3437 
2N3438 

TO-72 (CASE 25) 

2N3821 

2N3822 

2N3824 

2N4220 

2N4220A 

2N4221 

2N4221A 

2N4222 

2N4222A 
*2N5358 
*2N5359 
*2N5360 



*2N5361 
*2N5362 
*2N5363 
*2N5364 

TO-92 (CASE 72) 

"2N5457 
*2N5458 
"2N5459 

MPF103 

MPF104 

MPF105 

MPF108 

MPF109 

MPF112 

PN4220 

PN4221 

PN4222 



o 
o 

fl> 
0) 
(/> 

01 
Ol 



9-11 



Process 55 



Transfer Characteristics 




I -1 -2 

Vqs - GATE SOURCE VOLTAGE (V) 



Transfer Characteristics 




_i -2 -3 -4 -6 
V GS -GATE-SOUHCE VOLTAGE (V) 



Common Drain-Source 
Characteristics 



1 1 ! 
- TYP V GS(0 Ff ( 
T A = 25 C 


1 1 
■ -1.8V 






I I 














Vos ■ OV 




























-V GS = -02SV 














'-r-rr 

V QS ■ -0.5V 














-III 










— V 


Gt - -0.7SV 














Vos = -'V^ 












- 


2S 


9 



1 2 3 4 5 
V DS - DRAIN-SOURCE VOLTAGE (VI 





Process 58 N-Channel JFET 



DESCRIPTION 

Process 58 was developed for analog or digital 
switching applications where very low r DS(ON) is 
mandatory. Switching times are very fast and 
R DS(ON ) C iss time constant is low. The 6fi typical 
on resistance is very useful in precision multiplex 
systems where switch resistance must be held to an 
absolute minimum. With r DS increasing only 
0.7%/ °C, accuracy is retained over a wide temp 
erature excursion. 



GATE IS BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BVqss 


V DS = 0V. I G =-1 /uA 




-25 


-30 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS = 5V, V GS = 
Pulse Test 




100 


400 


1000 


mA 


Reverse Gate Leakage 


'gss 


V GS =-15V, V DS = 






-50 


-500 


PA 


"ON" Resistance 




V DS = 100 mV, V GS = 




3.0 


6.0 


20 


n 


Pinch Off Voltage 


Vgs(off) 


V DS = 5V, l D =3nA 




-0.5 


-5.0 


-12 


V 


Drain "OFF" Current 


'd(OFF) 


V DS = 5V, V GS =-10V 






0.05 


20 


nA 


Feedback Capacitance 


c rss 


V DG = 15V, l D =2mA,f = 


1 MHz 




12 


25 


pF 


Input Capacitance 




V D g * 15V, l D = 2mA, f = 


1 MHz 




25 


50 


pF 


Forward Trans- 
conductance 




V DG = 10V, l D = 2 mA 






10 




mmhos 


Output Conductance 


9os 


V DG = 10V, l D = 2 mA 






100 




umhos 


Noise Voltage 




V DG = 15V, l D = 2 mA, f = 


100 Hz 




6.0 




nV/VHz 



This process is available in the following device 
types. "Denotes preferred parts. 

TO 39 (CASE 09) 

U320 
U321 
U322 

TO-52 (CASE 07) 

*2N5432 
*2N5433 
*2N5434 

TO-92 (CASE 72) 

*J108 
*J109 

"J110 . , 



Process 58 



Common Drain-Source 
Characteristics 



1 80 




0.4 0.8 1.2 1.6 20 

V„s - ORAIN-SOURCE VOLTAGE IV) 



Parameter Interactions 




-0.1 -0.5 -1.0 -5.0 -10 

Vgsioffi - GATE CUTOFF VOLTAGE (V) 



"ON" Resistance vs 
Drain Current 




Common Drain-Source 
Characteristics 



| 40 

i 



T,.*2S-C 

TVP Vosiopfi.-0.7V 



m 



Vos = 0V 



-0.3V - -0.4V -0.5V 



m 



1.0 2.0 3.0 4.0 5.0 

Vus - DRAIN-SOURCE VOLTAGE IVI 



Normalized Drain 
Resistance vs Bias 
Voltage 



100 

1 50 

S 20 
o 

3 10 

i 

£ 5.0 
z 

I 

| 2.0 
1.0 



= Vgs(Ofh»5V.10).A- 


















1 — 1 1 — 1 1 










~ r DSb " 


m 




















1 los 

V — 























































































































































0.2 0.4 0.6 0.8 1.0 

iV gs /V GS ioff,i - NORMALIZED GATE- 
TO SOURCE VOLTAGE (V) 



Leakage Current vs 
Voltage 




S.O 10 15 20 25 
V DG -DRAIN-GATE VOLTAGE (V) 



Output Conductance vs 
Drain Current 




0.1 1.0 

l D - DRAIN CURRENT (mA) 



Transconductance vs 
Drain Current 




0.1 1.0 

l - DRAIN CURRENT (mA) 



Noise Voltage vs 
Frequency 



100 

> 

UJ 

(S 

3 i. 



:v do mov 

:0W.6.0Hl*f»10Hi.10O1 








z 




































































































































= 1.0 m 


i: 














































































= 1 
























III 1 





















01 03 0.1 0.51.0 2.0 10 100 
I - FREQUENCY (kHi) 



Capacitance vs Voltage 




-4.0 -».0 -12 -16 - 
Vos - GATE-SOURCE VOLTAGE (V) 



Switching Turn-On vs 
Gate Source Voltage 













1 

Vdd" 


1 1 
1.5V 












VqS(OFF> 


-12V 












T t 




25 






































39 


















nA- 




























- "l 


- Ifl m 


1 






































- 











-2.0 -4.0 -6.0 -8.0 -10 

Vgsioffi - GATE SOURCE CUTOFf VOLTAGE (V) 



Switching Turn-On 
Time vs Drain Current 




5.0 10 15 20 25 
l D - DRAIN CURRENT ImA) 



9-14 




Process 83 N-Channel Monolithic Dual JFET 




DESCRIPTION 

Process 83 is a monolithic dual JFET with a diode 
isolated substrate. It is intended for operational 
amplifier input buffer applications. Processing 
results in low input bias current and virtually un- 
measureable offset current. Likewise matching char- 
acteristics are virtually independent of operating 
current and voltage, providing design flexibility. 
Most GP 2N types are sorted from this family. 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV G ss 


V DS = 0V, l G =-1 mA 


-50 


-70 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS = 15V, V GS =0 


0.5 


2.5 


8.0 


mA 


Forward Trans- 
conductance 


9fs 


V DS = 15V, V GS = 


1.0 


2.5 


5.0 


mmho 


Pinch Off Voltage 


V GS(OFF) 


V DS = 15V, l D = 1 nA 


-0.5 


-2.0 


-4.5 


V 


Gate Current 


■g 


V DG = 20V, l D = 0.2 mA 




3.0 


50 


PA 


Forward Trans- 
conductance 




V DG = 15V, l D =0.2 mA 


600 


850 




/imhos 


Output Conductance 


tot 


V DG = 15V, l D = 0.2 mA 




1.0 


5.0 


Mmhos 


"ON" Resistance 


'OS 


V DS = 100 mV, V GS = 




450 




n 


Noise Voltage 


e„ 


V DG = 15V, l D = 0.2 mA 
f = 100 Hz 




10 


50 


nV/VHz 


Differential Match 


'V G si " VgS2 ' 


V DG = 15V, l D = 0.2 mA 




7.0 


25 


mV 


Differential Match 


AV GS1 2 


V OG = 15V, l D = 0.2 mA 




10 


50 


MV/°C 


Common Mode 
Rejection 


CMRR 


V DG = 15V, l D =0.2 mA 


80 


95 




dB 


Feedback Capacitance 


c rs 


V DG = 15V, l D =0.2 mA, 
f = 1 MHz 




1.0 


1.2 


PF 


Input Capacitance 


Cis 


V DG = 15V, l D =0.2 mA, 
f = 1 MHz 




3.4 


4.0 


PF 



o 
o 
o 

tn 
</> 

00 
CO 



This process is available in the following device types. "Denotes preferred parts. 



TO-71 (CASE 12) 



8-Pin MiniDIP (CASE 60) 



2N3921 


2N5047 


U233 


J410 


2N3922 


*2N5196 


U234 


J411 


*2N3954 


*2N5197 


U235 


J412 


*2N3954A 


"2N5198 




8-Pin MiniDIP 


*2N3955 


*2N5199 




'2N3955A 


2N5452 




*NPD8301 


*2N3956 


2N5453 




*NPD8302 


'2N3957 


2N5454 




*NPD8303 


*2N3958 


*2N5545 






2N4084 


*2N5546 






2N4085 


*2N5547 






2N5045 


U231 






2N5046 


U232 







9-15 








Leakage Current vs Output Conductance Transconductance 

Transfer Characteristics Voltage vs Drain Current vs Drain Current 




Noise Voltage vs Frequency Noise Voltage vs Current Capacitance vs Voltage Differential Offset 




t - FREQUENCY [kHz] l„ - DRAIN CURRENT (mA) V M - GATE SOURCE VOLTAGE IV) l - DRAIN CURRENT (mA) 



Differential Drift CMRR vs Drain Current 




l D - DRAIN CURRENT (mA) !„ - DRAIN CURRENT (mA) 




Process 84 N-Channel Monolithic Dual JFET 




DESCRIPTION 

Process 84 is a monolithic dual JFET with a diode 
isolated substrate. It is designed for the most 
critical operational amplifier input stages or elec- 
trometer single ended preamp. Ideal for medical 
applications and instrumentation inputs where 
subpicoamp inputs are important. Device design 
considered high CMRR, subpicoamp leakage over 
wide input swings, low capacitance, and tight 
match over wide current range. 



CHARACTERISTIC 


PARAMETER 


CONDITIONS 


MIN 


TYP 


MAX 


UNITS 






Gate-Source Breakdown Voltage 


BV GSS 


V DS - OV, l G = -1 ulA 


-40 


-60 




V 


Drain Saturation Current 


'□ss 


V DS " 15V, V GS =0V 


20 


300 


1000 


flA 


Forward Transconductance 


H 


V DS = 15V,V GS = 0V 


90 


180 


300 


/jmhos 


Forward Transconductance 




V DS = 15V, l D =30uA 


50 


120 


150 


/imhos 


Gate Cutoff Voltage 


V GS(OFF) 


V DS - 15V, l D = 1 nA 


0.5 


2 


4.5 


V 


Reverse Gate Leakage Current 


'gss 


V D s = OV. V GS = -20V 




1 


5 


pA 


Gate Leakage Current 


« 


V DG - 10V, l D =30uA 




0.5 


3 


PA 


Feedback Capacitance 




V DS * 15V, V GS = 0. f = 1 MHz 




0.3 


0.4 


pF 


Input Capacitance 




V DS = 15V, V GS = 0, f =1 MHz 




2 


3 


pF 


Noise Voltage 


e„ 


V DS = 15V, l D = 30*iA. f - 1 kHz 




30 


50 


nV/VRz 


Noise Voltage 


en 


V D s - 15V, l D =30;jA, f = 10 Hz 




180 




nV/v/Rz 


Output Conductance 


On 


V DS = 10V, l D = 30uA 




0.01 


0.02 


/jmhos 


Differential Gate-Source Voltage 


l V GS1 _V GS2l 


V DS ■ 10V, l D =30 M A 




12 


25 


mV 


Differential Gate-Source 
Voltage Drift 


A V GS1 _ 2 


V DS = 10V, l D = 30 uA 




10 


50 


MV/°C 


Common-Mode Rejection 
Ratio 


CMRR 


V DS = 10V, l D =30uA 




112 




dB 



This process is available in the following device types. * Denotes preferred parts. 
TO-78 (CASE 24) 



2N5902 
2N5903 
2N5904 
2N5905 



2N5906 
"2N5907 
"2N5908 
*2N5909 



Parameter Interactions 



Leakage Current vs 
Voltage and Drain Current 





Vgsioffi - VOLTAGE GATE-tD SOURCE IV) 



10 20 30 40 50 60 70 
V OG - DRAIN GATE VOLTAGE (V) 



9-17 

! 



o 
o 

CD 

V) 

(/> 
00 




075 05 0.75 1 US 1.S 1.7S 
V GS - GATE TO SOURCE VOLTAGE (V) 




1 2 3 4 5 

V DS - DRAIN SOURCE VOLTAGE IV) 




10 20 30 40 50 60 70 
Voc - DRAIN GATE VOLTAGE (V) 



Transfer Characteristics 




0.25 OS 0.75 I 1.25 1.5 1.75 
V GS - GATE-SOURCE VOLTAGE IVI 



Transconductance vs 
Drain Current 




10 20 30 50 1 00 200 

■ o - DRAIN CURRENT (>jA) 



Output Conductance vs 
Drain Current 





































































- 5V- 












































iV 




»GSIC 


FF 


1 


































1 


n 


1 








V 




































* GSiOFF 1 • 


























































1 


5V 


























15V 







































ID 30 50 100 ZOO 1 n 

l - DRAIN CURRENTS) 



Noise Voltage vs 
Frequency 




10 100 1kHz 10 kHz 100 kHz 
f - FREQUENCY (kHz) 



Noise Voltage vs 
Current 



= V TC =15V 
































































"10 Hz 
















= 100 Hz — 
































































1 kHz 











































10 30 100 

Iq - DRAIN CURRENT OjA) 



Capacitance vs Voltage 

























































c 


... IVos - 


15V) 








































































































k 






























c 


RSS (V S 


15V) 












Ml 









4 i 12 16 20 24 
V os - GATE-SOURCE VOLTAGE (V) 



Differential Offset Differential Drift CMRR vs Drain Current 




10 100 Ik 10 50 100 l»A ,g 20 30 , 50 60 00 100 

l D - DRAIN CURRENT IpAl 1p — DRAIN CURRENT (yA) l„ - DRAIN CURRENT (uA) 



9-18 




Process 86 N-Channel Monolithic Dual JFET 



DESCRIPTION 




Process 86 is a monolithic dual JFET with a diode 
isolated substrate. It is intended for critical amplifier 
input stages requiring low noise, sub picoamp bias 
currents and high gain. Exacting process control results 
in consistent parameter distribution with tight match 
and low drift. 

This process is available in the following device types. 
"Denotes preferred parts. 

TO-78 (CASE 24) 

U421 
U422 
U423 
U424 
U425 
U426 



PROCESS IN DEVELOPMENT 



9-19 




Process 88 P-Channel JFET 



DESCRIPTION 




Process 88 is designed primarily for electronic 
switching applications where a P channel device is 
desirable. Inherent zero offset voltage, low leak- 
age and low Rds(on) 0| ss t ' me constant make this 
device excellent for low level analog switching, 
sample and hold circuits and chopper stabilized 
amplifiers. This device is the complement to 
Process 51 . 



GATE IS BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


v DS = OV, l G = 1 MA 




30 


40 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS =-15V, V GS = 




-5.0 


-30 


-90 


mA 


Forward Trans- 
conductance 


9f s 


V DS = -15V, V GS = 




4.0 


13 


17 


mmhos 


Forward Trans- 
conductance 


9f 5 


V DG =-15V, l D =-2 mA 






3.5 




mmhos 


Gate Leakage 


'gss 


V GS = 20V, V DS = 






0.05 


1.0 


nA 


"ON" Resistance 


r os 


V DS =-100mV, V GS =0 




50 


80 


200 


n 


Pinch Off Voltage 


Vgsioff) 


V DS =-15V, l D =-1 nA 




0.5 


5.0 


10 


V 


Drain "OFF" Current 


'd(off) 


V DS =-15V, V GS = 10V 






-0.05 


-10 


nA 


Feedback Capacitance 


O r ss 


V DG =-15V, l D =-2mA, f = 


1 MHz 




4.0 


5.0 


pF 


Input Capacitance 


Oh, 


V DS =-15V, l D =-2 mA,f = 


1 MHz 




14 


15 


pF 


Output Conductance 


|m 


V DG =-15V, l D =-2 mA 






100 


300 


Mmhos 


Noise Voltage 


e n 


V DG ~-%m, l D =-2 mA, f = 


= 100 Hz 




20 




nVA/Hl 



This process is available in the following device 
types. 'Denotes preferred parts. 



TO-18 (CASE 11) 


TO-72 (CASE 23) 


2N2609 


2N3382 


2N5018 


2N3384 


2N5019 


2N3386 


*2N5114 


2N3993 


*2N5115 


2N3993A 


"2N5116 


2N3994 


U301 


2N3994A 


U304 




U305 


TO-92 (CASE 71) 


U306 


P1086E 




P1087E 



TO-92 (CASE 74) 

*J174 
*J175 
*J176 
*J177 
*J270 
*J271 

QUALIFIED PER MIL-S-19500 

"2N51 14JAN, JANTX, JANTXV 
*2N51 15JAN, JANTX, JANTXV 
*2N51 16JAN, JANTX, JANTXV 



Process 88 



Transfer Characteristics 




1.0 2.0 3.0 4.0 

W os - GATE-SOURCE VOLTAGE (VI 



Parameter Interactions 




Idss^Vos- -tSV. Ves'OPULSEO 
OS * Vds ' -100 "V. Vos = 
VGscoFf,eVos--15V.I D .-10nA 



1.0 2.0 5.0 10 

Vosioffi - GATE CUTOFF VOLTAGE (V) 



Common Drain-Source 
Characteristics 




-1.0 -2.0 -3.0 -4.0 -50 
Vos - DRAIN SOURCE VOLTAGE (VI 



Transfer Characteristics 




1.0 2 3.0 4.0 

V os - GATE-SOURCE VOLTAGE (VI 



Leakage Current vs 
Voltage 




-6.0 -12 -U -24 -30 
V,« - DRAIN-GATE VOLTAGE (VI 



Channel Resistance vs 
Temperature 




-H -25 »25 *75 »125 »I7S 
T A - AMBIENT TEMPERATURE ( CI 



Output Conductance vs 
Drain Current 




-0.01 -0.1 -1.0 -10 

l„- DRAIN CURRENT ImA) 



Transconductance vs 
Drain Current 




-1.0 -10 -100 

l - DRAIN CURRENT (mA) 



Noise Voltage vs 
Frequency 















































































































































J 


D 


— 1 




r 


A 










































[g » 1 


.OraA. 
























































hh 


















V DG = -15V 

Hz©f = 10 Hz, 100 H 
21 V0 kHz 
■ 1 1 1 1 — 11.11 1 i, 1 










I - 
— 









0.01 0.03 0.1 0.51.02.0 10 
I -FREQUENCY IkHil 



Capacitance vs Voltage 



1110 

50 



10 ^ ! 



f = 0.1 - 1.0 MHl 



: C 1 ,tV os --1SV)- 



-C„(V[>s--1SV)_ 



4.0 80 12 10 20 
V os - GATE SOURCE VOLTAGE (VI 



Normalized Drain 
Resistance vs 
Bias Voltage 




'WVgsioffi' - NORMALIZED GATE- 
TO SOURCE VOLTAGE (V) 



9-21 



0> 
00 

V) 
(0 

© 
u 
o 




Process 89 P-Channel JFET 



DESCRIPTION 

Process 89 is designed primarily for low level 
amplifier applications. This device is the comple- 
ment to Process 55. Commonly used in voltage 
variable resistor applications. 



GATE IS BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


V DS = 0V, l G = 1 uA 


20 


40 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS =-15V. V GS = 


-0.3 


-4.0 


-20 


mA 


Forward Trans- 
conductance 


9fs 


V DS =-15V. V GS = 


1.0 


2.5 


4.0 


mmhos 


Forward Trans- 
conductance 


9fs 


V DG =-15V, l D =-0.2 mA 




700 




umhos 


Gate Leakage 


'gss 


V GS = 20V, V DS =0 




0.02 


1.0 


nA 


Pinch Off Voltage 


VgS(OFF) 


V DS =-15V, l D =-1 nA 


0.5 


3.0 


9.0 


V 


Feedback Capacitance 


O r ss 


V DG = -15V, V GS = 0, f = 1 MHz 




2.0 


2.5 


pF 


Input Capacitance 


c, s 


V DS = -15V, l D =-2 mA, f = 1 MHz 




7.0 


8.5 


pF 


"ON" Resistance 


'OS 


V DS =-100 mV, V GS = 




450 




ft 


Output Conductance 


9os 


V DG = -15V, l D = -0.2 mA 




5.0 


15 


umhos 


Noise Voltage 


8„ 


V DG =-15V, l D =-0.2 mA, 
f = 100 Hz 




30 




nV/\/Hz 



This process is available in the following device 
types. 'Denotes preferred parts. 



TO-18 (CASE 11) 

2N2608 
2N4381 
2N5020 
2N5021 

TO-72 (CASE 23) 

2N3329 
2N3330 
2N3331 
2N3332 



TO-92 (CASE 71) 

*2N5460 
*2N5461 
*2I\I5462 

PN4342 

PN4360 

PN5033 



TO-92 (CASE 74) 

2N3820 

QUALIFIED PER MIL-S-19500 

2N2608JAN 



9 22 




Process 90 N-Channel JFET 



DESCRIPTION 

Process 90 is designed for VHF/UHF mixer/ 
amplifier and applications where Process 50 is not 
adequate. Has sufficient gain and low noise, com- 
mon gate configuration at 450 MHz, for sensitive 
receivers. The high transconductance and square 
law characteristics insures low crossmodulation 
and intermodulation distortions. Common-gate 
operation simplifies circuitry. Consider Process 
92 for even higher performance. 



GATE IS ALSO BACKSIDE CONTACT 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


V DS =0V, l G =-1 M A 




-20 


-30 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS = 10V, V GS = 




3 


18 


40 


mA 


Forward Trans- 
conductance 


9f s 


V DS = 10V, V GS = 




5.5 


8.0 


10 


mmhos 


Forward Trans- 
conductance 


9f S 


V DS = 10V, l D = 5 mA 




4.5 


5.8 




mmhos 


Reverse Gate Current 


!gss 


V GS = -15V, V DS = 






-5.0 


-100 


PA 


"ON" Resistance 


r DS 


V os = 100 mV, V GS = 






90 




SI 


Pinch Off Voltage 


Vgsioff) 


V DS = 10V, l D - 1 nA 




-1.5 


-3.5 


-6.0 


V 


Output Conductance 


9os 


Vqq = 10V, l D =5mA 






45 


100 


umhos 


Feedback Capacitance 


, c„ 


V DG = 10V, l D = 5 mA 






1.0 


1.2 


pF 


Input Capacitance 


c„ 


V DG = 10V, l D = 5 mA 






4.0 


5.0 


pF 


Noise Voltage 




Vqq - 10V, l D =5mA, f = 


100 Hz 




13 




nV/\/Hz 


Noise Figure 


NF 


V DG = 10V, l D = 5 mA, f = 


450 MHz 




3.0 




dB 


Power Gain 


G„ (CG) 


V DG = 10V, l D = 5 mA, f = 


450 MHz 




11 




dB 



This process is available in the following device types. "Denotes preferred parts. 



TO-52 (CASE 07) 

U312 



TO-72 (CASE 29) 

"2N5397 
2N5398 



Common Drain-Source 
Characteristics 



TO-92 (CASE 72) 

J114 
*J210 
*J211 
*J212 
"J300 



Parameter Interactions 



TO-92 (CASE 77) 

*2N5245 
*2N5246 
*2N5247 



Transconductance vs 
Drain Current 




*,. loss e Vos - 10V. V os ■ PULSED 
'os^Vds-'HOuVV^.o 
Voi»ph»Vob-1IIV.I d "1 OnAj 



3.0 4 5 
E VOLTAGE (VI 




-1.0 -SO -10 

- GATE CUTOFF VOLTAGE (V) 




lo - 0BAIH CURRENT (mA) 



924 



Process 90 






u 
O 




DESCRIPTION 

Process 92 is designed for VHF/UHF amplifier, 
oscillator, and mixer applications. As a common 
gate amplifier, 16 dB at 100 MHz and 12 dB at 
450 MHz can be realized. Worst case 75 ohm 
input impedance provides ideal input match. 



GATE IS ALSO BACKSIDE CONTACT 



CHARACTERISTIC 



PARAMETER 



TEST CONDITIONS 



MIN 



TYP 



MAX 



UNITS 



Gate-Source Breakdown 
Voltage 

Zero Gate Voltage 
Drain Current 

Forward Trans- 
conductance 

Forward Trans- 
conductance 

Reverse Gate Current 

"ON" Resistance 

Pinch Off Voltage 

Output Conductance 

Feedback Capacitance 

Input Capacitance 

Noise Voltage 

Noise Figure 
Power Gain 



BV GSS 
'dss 

9fs 
'gss 

r DS 

Vgsiof 
9os 

NF 

G„„ 



V DS =0V, l e =-1 |UA 
V DS = 10V, V GS = 0, Pulsed 
V DS » 10V, 

Vgs " 0, Pulsed 
10V, l D = 10 mA 



V 



DG 

v GS = 
v DS = 

V DS ■ 

V DG 

Vdg 

V DG ; 

V DG 

Vdg 



-15V,"V DS =0 
100 mV, V GS = 
10V, l D = 1 nA 



-20 
10 

10 

35 
-1.5 



10V, l D 
10V, l D 
10V, l D 
10V, l D 
10V, In 



10 mA 

10 mA, f = 1 MHz 
10 mA, f = 1 MHz 
10 mA, f= 100 Hz 
10 mA, 



f = 450 MHz 



' DG 



= 10V, l D - 10 mA, 



f = 450 MHz 



-30 
38 
19 

13 

-15 
45 

-4.0 
160 
2.0 
4.1 
6.0 

3.0 
12 



80 



18 

-100 
80 
-6.5 
250 
2.5 
5.0 



V 

mA 

mmhos 

mmhos 
PA 

a 

V 

/umhos 
pF 
pF 
nV/VRI 

dB 
dB 



This process is available in the following device types. 'Denotes preferred parts. 
TO-52 (CASE 07) TO-99 (CASE 24) TO-92 (CASE 72) 

U4301 



U308 
*U309 
"U310 



U431J 



Dual 



Parameter Interactions 



J308 
*J309 
*J310 

Transconductance vs 
Drain Current 



Leakage Current vs Voltage 





loss • V M = 10V, V C1 ' OV. PUISED 

v QS , OF F.ev M = iov,i D -i n A 
T.-WC 












































l D " 16mA 






! D = 1-0 


nA 
























- '©S6- 






= + 





















































































Vgsioffi - GATE CUTOFF VOLTAGE IV) 



l D -DRAIN CURRENT (mA) 



5.0 10 15 ZD 25 
Vdg - DRAIN-GATE VOLTAGE (V) 



Transfer Characteristics 




Transfer Characteristics 




_) -2 -3 -4 -5 
V os - GATE SOURCE VOLTAGE (V) 



Process 92 



Input Admittance 




O 
o 
O 

<D 
ro 



t - FREQUENCY (MHz) 



Transfer Characteristics 



Transfer Characteristics 



Forward Transadmittance 



25 

I 20 

3 

a 

o ID 



v os .| 


ov 


1 1 

J:T»--SS , C 














-^_Jt a -26C 








' 


, l A = US L 








SVosioFfi ■ -22M 










,T A • 25 C 








,T A • 125 C 










^ — h — 























kl | -1 -2 -3 

V G5 - GATE-SOURCE VOLTAGE IVI 




£ M 
* 100 



















- V d q - III 

- I D = 10m 
[(CGI 



















V 




































































-9(1, 













































































































































V GS - GATE SOURCE VOLTAGE (V) 



f - FREQUENCY (MHz) 



Common Drain-Source 
Characteristics 



_. 1 




i 














V GSiOFF 




2.7V 






























































. 3 




































-0.4V 
















8V 


-1.2V - 


i.6 


-2.0V 

















1.0 2.0 3.0 4.0 5.0 
Vqs - DRAIN-SOURCE VOLTAGE (V) 



Output Conductance vs 
Drain Current 




l D - DRAIN CURRENT (mA) 



Output Admittance 



: Vn„'10V 
















: l D - 10 m* 
(CGI 

















































































































































































































100 500 
f — FREQUENCY (MHi) 




Process 93 N-Channel Monolithic Dual JFET 




DESCRIPTION 

Process 93 is a monolithic dual JFET with a diode 
isolated substrate. It is intended for wide band, 
low noise, single ended video amplifier input 
stages, and high slew rate op amps. Monolithic 
structure eliminates thermal transient errors, and 
provides freedom to pick operating current and 
voltage. 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


v DS - ov, i G = -1 ua 


-25 


-30 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS = 10V, V GS = 0, Pulsed 


3.0 


18 


40 


mA 


Forward Trans- 
conductance 


h. 


V DS = 10V, V GS = 0, Pulsed 




8.0 




mmhos 


Forward Trans- 
conductance 


9fs 


V DG = 10V, l D = 5 mA 


5.0 


6.0 


10 


mmhos 


Output Conductance 


9os 


V DG = 10V, l D = 5 mA 




50 


100 


Mmhos 


Pinch Off Voltage 


V GS(OFF) 


V DS = 10V, l D = 1 nA 


-1.5 


-3.5 


-6.0 


V 


"ON" Resistance 


r DS 


V DS = 100mV, V GS =0 




100 




a 


Gate Current 


l G 


V DG = 10V, l D = 5 mA 




10 


100 


PA 

nV/VRz 


Noise Voltage 


e„ 


V DG = 10V. I D = 5 mA, f = 100 Hz 




9.0 


30 


Differential Match 


'Vgsi "Vgs2 ' 


V DG = 10V, l D = 5 mA 




9.0 


30 


mV 


Differential Match 


AV GS1 . 2 


V DG = 10V, l D = 5 mA 




15 


40 


MV/°C 


Common Mode 
Rejection 


CMRR 


V DG = 10V, l D = 5 mA 




90 




dB 


Feedback Capacitance 


c rs 


V DG = 10V, l D = 5mA, f = 1 MHz 




1.0 


1.2 


pF 


Input Capacitance 




V DG = 10V, l D = 5 mA, f = 1 MHz 




4.2 


5.0 


pF 



This process is available in the following device types. 'Denotes preferred parts. 

TO-78 (CASE 24) 

*2N5911 
*2N5912 
U257 

Parameter Interactions 



Transconductance 
vs Drain Current 



8.1 



1 oc 




If., loss * Vos « 10V. V os ■ OV. PULSED 
Ids (91,, " I mA, V os »0V 
VosloFFlfVps-IOVJo-lnA 



-1 -3 -5 -10 

VoSioFFI - GATE CUTOFF VOLTAGE (VI 




9-28 




Output Conductance 
vs Drain Current 




0-1 1.0 

l D - DRAIN CURRENT (mA) 



Noise Voltage vs Frequency 




0.01 0.03 0.1 0.5 2.0 10 50 100 
f - FREQUENCY (hHr) 



Capacitance vs Voltage 





























.1 


















1 


- 10 


































M= 


.> 


















ds'IOV)- 























































































-4.0 -0.0 -12 -16 -20 
V os - GATE SOURCE VOITAGE (V) 



Differential Offset 



Differential Drift 



CMRR vs Drain Current 




01 1.0 

l„ -DRAIN CURRENT ImAI 




1.0 

- DRAIN CURRENT ImA) 




5 60 



0.1 1.0 10 

Id — DRAIN CURRENT (mA) 



9-29 



23 



Process 94 N-Channel Monolithic Dual JFET 



DESCRIPTION 

Process 94 is a monolithic dual JFET. It is strictly 
intended for operational amplifier input buffer 
applications. Special processing results in ex- 
tremely low input bias current and virtually 
unmeasureable offset current. It is important to 
note that the <5 pico ampere bias current is 
measured at 35 volts. Typical CMRR is 125 dB. 
Performance superior to electrometer tubes can 
be readily achieved with low offset voltage and 
almost zero long term drift. 




CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


V DS =0V. I G =-1 MA 


-40 


-70 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS = 15V, V GS = 


0.5 


3.0 


10 


mA 


Forward Trans- 
conductance 


Ik 


V DS = 15V. V GS = 


1.5 


3.5 


7.0 


mmho 


Forward Trans- 
conductance 


9f s 


V DG - 15V. I D = 0.2 mA 


0.9 


1.2 


1.8 


mmhos 


Pinch Off Voltage 


Vgsioff) 


V DS = 15V, l D = 1 nA 


-0.5 


-2.0 


-6.0 


V 


Gate Current 




V DG - 35V, l D = 0.20 mA 




1.0 


15 


PA 


Feedback Capacitance 


c,„ 


V DS • 15V, V GS = 0, f = 1 MHz 




0.01 


0.02 


pF 


Input Capacitance 


c iss 


V DS - 15V, V GS = 0, f = 1 MHz 




4.0 


5.0 


pF 


Noise Voltage 


e n 


V DG = 15V, l D = 0.2 mA, f = 10 Hz 




12 


50 


nV/\/Hz 


Output Conductance 


9os 


V DG = 15V, l D = 0.2 mA 




<0.1 




umhos 


Differential Match 


'Vgsi -Vgs2 ' 


V DG = 15V, l D = 0.2 mA 




5.0 


25 


mV 


Differential Match 


AV GS1 . 2 


V DG = 15V, l D = 0.2 mA 




6.0 


50 


MV/°C 


Common Mode 
Rejection 


CMRR 


V DG = 15V, l D = 0.2 mA 




125 




dB 



This process is available in 
the following device types. 
'Denotes preferred parts. 

TO-71 (CASE 12) 

*NDF9406 
*NDF9407 
*NDF9408 
*NDF9409 
'NDF9410 

TO-78 (CASE 24) 

NDF9401 
NDF9402 
NDF9403 
NDF9404 
NDF9405 



Parameter Interactions 



Common Drain-Source 
Characteristics 




-0.1 -0.5 -1.0 -5.0 -10 

V osi offi - GATE SOURCE VOLtAGE (V) 



5.0 
| 4.0 

I- 
■ 

I 3.0 

9 
O 

z 

3 2.0 

K 

o 

I 

_p 1.0 




T, 
TV 


= Z 
PV 


5 C 




-2 


5V 






•«\ 


_ 
















-0 




















v- 
















0.6V. 
















- 


9V 


















1 1 

-1.2V 














-1.tV. 






-1.6 





1.0 2.0 3.0 4.0 



V os - DRAIN-SOURCE VOLTAGE (V) 



9-30 



Process 94 



Transfer Characteristics 




-0.5 -1.0 -1.5 -2.0 -2.5 
V GS - GATE SOURCE VOLTAGE (V) 



Leakage Current vs 
Voltage 




10 20 

V DG - DRAIN-GATE VOLTAGE (V) 



Output Conductance vs 
Drain Current 



1 D :-H, " 
































































' v os 


OFFI " -3 


Vdg 
= 10 


5 
o 


0V . 














T 




-1.0V 


- 














nv 




























































































15 





















0.1 1.0 

l D - DRAIN CURRENT ImA) 



Transfer Characteristics 




-0.5 -1.0 -1.5 -2.0 -2.5 
V GS - GATE SOURCE VOLTAGE (V) 



Transconductance vs 
Drain Current 




0.01 0.1 1.0 10 

l - DRAIN CURRENT (mA) 



Capacitance vs 
Voltage 













5V 














^C.(V 0S - 






































Vc.bI 








r„.i 


Vds = 


























































































































t 


0.1 


- 1.0 M 

1 


Hz 



-4.0 -8.0 -12 -16 -20 
Vos - GATE SOURCE VOLTAGE (VI 



Noise Voltage vs 
Frequency 



V DG = 15V 

OW = 6.0Hz@f=10Hz. 100 Hz 
0.21 61 1 £ 1 .0 kHz 

tr 




0.01 0.03 0.1 0.5 1 2.0 10 50 100 
f - FREQUENCY (kHz) 



Noise Voltage vs 
Current 



— V DG = 15V — 


































































































































1 00 Hz » 

lOkHz'tj 
100 kHz 

111 



































































Differential Offset 




l - DRAIN CURRENT (mA) 



0.01 0.1 1.0 

l D - DRAIN CURRENT (mA) 



Differential Drift 



CMRR vs Drain Current 













V 0G =15V 

iT.*25'CTO*125"C: 
































































— rr 




















_L00 


E 




















— Men — 




































































'1 


IGHT 



































0.1 1.0 
l D - DRAIN CURRENT (mA) 



z 100 
o 

■ 

S 90 

i 

AC 

m 

e so 



























AVoc -10-20 


F 






































































-i 


V 


























































A 
-V 

III 


'OG 












CMRR = 20 lag 




SSI 2 

























0.01 0.1 1.0 

Id - DRAIN CURRENT (mA) 



9-31 




Process 95 N-Channel Monolithic Dual JFET 



DESCRIPTION 




Process 95 is a monolithic dual JFET with a diode 
isolated substrate. It is intended for operational 
amplifier input buffer applications. Processing 
results in low input bias current and virtually un- 
measureable offset current. Low noise voltage 
and high CMRR for critical l/f applications. 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV G ss 


V DS = 0V. I G =-1 M A 


-40 


-70 




V 


Zero Gate Voltage 
Drain Current 


'dss 


V DS = 15V. V GS = 


0.5 


3.0 


8.0 


mA 


Forward Trans- 
conductance 


9fs 


V DS = 15V, V GS =0 


1.0 


2.5 


4.0 


mmhos 


Forward Trans- 
conductance 


9fs 


V DG = 15V, l D =0.2 mA 


0.5 


0.7 




mmhos 


Gate Leakage 


'gss 


V GS = -20V, V DS = 




-5.0 


-100 


PA 


Pinch Off Voltage 


Vgsioffi 


V DS - 15V, l D = 1 nA 


-0.5 


-2.5 


-4.0 


V 


Input Capacitance 


c iss 


V DS = 15V, V GS = 0, f = 1 MHz 




10 


14 


pF 


Noise Voltage 




V DS = 15V, l D = 0.2 mA, 
f = 10 Hz 




8.0 


30 


nV/\/H7 


Noise Voltage 


"n 


V DS = 15V, l D = 0.2 mA. 
f = 100 Hz 




6.0 


10 


nV/VHz 


Output Conductance 




V DG = 15V, l D =0.2 mA 




0.3 


1.0 


Mmhos 


Feedback Capacitance 


Crss 


V DS m 15V, V GS = 0, f = 1 MHz 




3.5 


5.0 


pF 


Differential Match 


'Vgsi 'Vgs2 1 


V DG = 20V, l D = 0.2 mA 




6.0 


25 


mV 


Differential Match 




V DG = 20V, l D =0.2 mA 




9.0 


60 


JiV/°C 


Common Mode 
Rejection 


CMRR 


V DG = 20V, l D =0.2 mA 


86 


115 




dB 



This process is available in the following device 
types. 'Denotes preferred parts. 

TO-71 (CASE 12) 

2N5515 *2N5522 

2N5516 '2N5523 

2N5517 *2N5524 

2N5518 *2N6483 

2N5519 *2N6484 

'2N5520 "2N6485 
*2N5521 



9-32 




Transconductance Transconductance Channel Resistance 

Characteristics Characteristics vs Temperature Leakage Current vs Voltage 




V 0S - GATE SOURCE VOLTAGE (VI V cs - GATE SOURCE VOLTAGE [VI T A - AMBIENT TEMPERATURE TO Voc - DRAIN-GATE VOLTAGE IVl 




23 



Process 96 N-Channel Monolithic Dual JFET 




0.0038 0.024 
10.096S) (0.610) 



DESCRIPTION 

Process 96 is a monolithic dual JFET with a diode 
isolated substrate. It is intended for wide band, low 
noise, single ended video amplifier input stages. 
Also ideal for matched voltage variable resistor 
applications over 60 dB tracking range. 



CHARACTERISTIC 


PARAMETER 


TEST CONDITIONS 


MIN 


TYP 


MAX 


UNITS 


Gate-Source Breakdown 
Voltage 


BV GSS 


v DS 


= 0V, l G =-1 mA 




4U 


OO 






Zero Gate Voltage 
Drain Current 


Idss 


V DS 


= 15V, V GS =0 




5.0 


15 


30 


mA 


Forward Trans- 
conductance 


9fs 


Vds 


= 15V, V GS = 




9.0 


18 


30 


mmhos 


Forward Trans- 
conductance 


9fs 


v DG 


= 15V, l D = 2 mA 




7.5 


9.0 




mmhos 


Output Conductance 


9os 


Vdg 


= 15V, l D = 2 mA 






15 


45 


umhos 


Pinch Off Voltage 


V GS(OFF) 


V ds 


= 15V, l D = 1 nA 






-1.8 


-3.0 


V 


"ON" Resistance 


r DS 


Vds 


= 100 mV, V GS =0 




35 


70 


120 


n 


Gate Current 


'gss 


Vgs 


= -20V, V DS = 






-8.0 


-100 


PA 


Gate Current 


Ig 


Vdg 


= 15V, l D = 2 mA 






15 


200 


PA 


Noise Voltage 




V D g 


= 15V, l D = 2 mA, f = 


100 Hz 




4.5 


10 


nVA/Hz 


Feedback Capacitance 


c„ 


Vdg 


= 15V, l D = 2mA,f = 


1 MHz 




2.5 


3.0 


pF 


Input Capacitance 


c„ 


Vdg 


= 15V, l D = 2 mA, f = 


1 MHz 




10 


12 


pF 


Differential Voltage 


'Vgsi "Vgs2 ' 


Vdg 


= 15V, l D =2mA 






8.0 


25 


mV 


Differential Voltage 


AV GS 


Vdg 


= 15V, l D = 2 mA 






9.0 


50 


jtiV/°C 


Common Mode 
Rejection 


CMRR 


Vdg 


- 15V, l D = 2 mA 




76 


95 




dB 



This process is available in the following device types. * Denotes preferred 

TO-71 (CASE 12) 8-Pin DIP (CASE 67) 

*2N 5564 *NPD5564 

*2N5565 *NPD5565 

*2N5566 *NPD5566 



parts. 



Parameter Interactions 



Transconductance vs Drain 
Current 



Leakage Current vs Voltage 




VosiOfFI " GATE CUTOFF V0UAGE IV) 





DRAIN CURRENT taAl 



8.0 IS 24 32 
Voc - DRAIN-GATE VOLTAGE IV) 



9-34 



DESCRIPTION 



(0.5S9) 
0.0038 
10.0965) 




Process 98 is a high gain, general purpose, monolithic 
dual JFET with a diode isolated substrate. It is intended 
for amplifier input stages requiring high gain, low noise 
and low offset drift over temperature. Strict processing 
controls result in low input bias currents and virtually 
immeasurable offset currents. Matching characteristics 
are essentially independent of operating current and 
voltage. 

This process is available in the following device types. 
"Denotes preferred parts. 

TO-71 (CASE 12) 

2N5561 

2N5562 

2N5563 

U401 

U402 

U403 

U404 

U405 

U406 

8-Pin DIP (CASE 60) 

J401 
J402 
J403 
J404 
J405 
J406 



PROCESS IN DEVELOPMENT 



9-36 



Appendices 



Glossary of Symbols 
Package Outlines 



H 



o 

-Q 

E 
>» 
V) 

H— 

o 
>» 

l_ 

CO 

(A 
(0 

o 

o 

O 

(A 

"35 
C 
CO 



|OT National 

4jI Semiconductor 



Transistor Glossary of Symbols 



DC PARAMETERS 



BV 



CBO 



Collector-Base Breakdown Voltage 
with Emitter Open-Circuited 

The breakdown voltage of the collector-base 
junction, measured at a specified current, 
with the emitter open-circuited. 



BV 



CEO 



BV 



CER 



BV, 



BV r 



Collector-Emitter Breakdown Voltage 
with the Base Open-Circuited 

The collector-emitter breakdown voltage, 
measured at a specified collector current, 
with the base open-circuited. 

Collector-Emitter Breakdown Voltage 
with Resistance between Emitter and 
Base 

The collector-emitter breakdown voltage 
measured at a specified current with a 
specified resistance R connected between 
the base and the emitter. 

Collector-Emitter Breakdown Voltage 
with Base Shorted to Emitter 

The collector-emitter breakdown, measured 
at a specified current, with the base shorted 
to the emitter. 

Collector-Emitter Breakdown Voltage 
at a Specified Condition 

The collector-emitter breakdown voltage 
measured at a specified current with the 
base-emitter junction forward or reverse 
biased by a specified voltage or current. 



!V ceo .BV«,,BV« s 



Was 






«V«o 





BV 



EBO 



Emitter-Base Breakdown Voltage 
with Collector Open-Circuited 

The emitter-base breakdown voltage, 
measured at a specified current, with the 
collector open-circuited. 



Common-Emitter DC Current Gain 

The ratio of DC collector current to DC base 
current measured at a specified collector- 
emitter voltage and a specified collector 
current. 



i. »" 



J f 



A-2 



'CBO 



Inverse Col lector- Base Current 

The collector-base current with the junction 
reverse biased by a specified voltage, with 
the emitter open-circuited. 




-©- 



i CEO -(9*1) Im 



0) 

(A 
<7>" 



O 
o 

</> 
(ft 
0) 

"5 



c/> 

»< 
3 

o 

(/) 



1 CEX 



Inverse Collector-Emitter Current at 
a Specified Condition 

The collector-emitter current measured at a 
specified collector-emitter voltage with the 
base forward or reverse biased by a specified 
voltage or current. 




'EBO 



Inverse Emitter-Base Current 

The emitter-base current with the junction 
reverse biased by a specified voltage with the 
collector open-circuited. 



T 




LVcEO- 
LVcER- 

LV CES - 
LV CEX . or. 



' CEO 



' CER 



(sust) 

(SUSt) 



V CES (sust) 
V CEX (sust) 



Pulsed Limiting Breakdown Voltages 

These are similar to the corresponding, above 
defined, BV parameters but are measured at 
a specified high current point where 
collector-emitter voltage is lowest. The dura- 
tion of the pulse and its duty cycle must be 
specified. The letter L indicates LIMITING 
Value and is measured outside the negative 
resistance zone of the reverse characteristic. 



LV« ,LU C „.LV C! ,.LV«» 





'BE (ON) 



Unsaturated Base-Emitter Voltage 

The base-emitter voltage measured in the 
common-emitter connection at a specified 
collector to emitter voltage and specified 
collector current. 




V,>«».|-IIII»!-l"iV/"C 

800 



mV 




A-3 



1 BE(SAT) 



'CE(SAT) 



Base-Emitter Saturation Voltage 

The base-emitter voltage measured in the 
common-emitter connection at a specified 
collector and base saturation currents. 

Collector-Emitter Saturation Voltage 

The collector-emitter voltage measured in 
the common-emitter connection at specified 
collector and base saturation currents. 



, < l CI < Ic 
SATURATION 



RT 



Reach Through Voltage 



r PT 



Punch Through Voltage 

The collector-base voltage above which an 
increase of applied voltage can be measured 
in the emitter-base open circuit. 



SMALL SIGNAL PARAMETERS 



'ob 



Common-Base Output Capacitance 

The common-base output capacitance with 
input ac open. 



MEASURE 

OUTPUT 

CAPACITANCE 



C re Common Emitter Reverse Transfer 

Capacitance 

This parameter is the imaginary part of y re . 
When l c = 0, C re is identical to C C b- 



Cte 



'CB 



Base-Emitter Capacitance 

The capacity of the base-emitter junction at 
a specified inverse voltage with the collector 
open. 

Collector Base Capacitance 

Collector Base Capacitance measured at 
some Specified Collector Base Voltage. 



A-4 



tit; 

"T T 



Cca ■■ C oh (WITH EMITTER GUARDED) 



CG e . CG b 



Conversion Gain, Common-Emitter or 
Common-Base 

The ratio of the output power of a mixer, at 
one specified frequency, to its input power, 
at another specified frequency. This param- 
eter is a function of oscillator injection 
voltage and the mixer operating point. 



CONVERSION GAIN 
II SPECIFY Ic.Vce 
Zl l Bf I if . LO LEVEL. CIRCUIT 




0) 
3 

0) 

55" 
o 

O 
o 

(A 
0) 

3 



«< 
3 

D" 
O 

0> 



f db' * h„ 



Vh,. 



Common-Base Cut Off Frequency 

The frequency at which the hft, (a) is 
reduced to 0.707 of its low frequency value. 

Common-Emitter Cut Off Frequency 

The frequency at which the h fe (/?) is 
reduced to 0.707 of its low frequency value. 

Gain Band-Width Product 

The common-emitter current gain band- 
width product in the frequency range where 
the current gain is falling at approximately 
6 db/octave. 




Maximum Frequency of Oscillation 

This parameter is a device figure of merit 
that is calculated from ft and rb'Cc. 



MAX FREQUENCY OF OSCILLATION 
'MAX FREQUENCY AT WHICH MAG = 1 



f MAX = 



8it rb Cc 



f/pG 



Common-Emitter Power Gain 



POWER GAIN. TRANSCONOUCER GAIN 

t) SPECIFY l c . V CE 

2) lo,^, CIRCUIT. NEUTRALIZED? 




-TE 



Common Emitter Transducer Gain 

A test fixture must be specified. 



G TE : 



POWER DELIVERED TO THE LOAD 
POWER AVAILABLE FROM THE SOURCE 



GMA 



Stability Limited Gain or Gain 
Maximum Available 

This parameter is a device figure of merit 
and must be calculated from the two port 
"y" parameters. 



GMA = 10 LOG 



NOT DEFINED FOR K < 1 



(0 

«= 
O 

>» 
t— 

(0 

w 

0) 

o 

o 

o 

(0 

w 
c 

(0 



IVHtHte,,!,,^, i 7 ARE SMALL SIGNAL VOLTAGES AND CURRENTS 
THE h - (HYBRID) PARAMETERS ARE DEFINED BY 

AND FOR COMMON EMITTER OPERATION THESE E B 



Common-Emitter Current Gain 

The common-emitter forward current trans- 
fer ratio with output ac shorted. This is a 
complex quantity. 



h - PARAMETERS-COMMON EMITTER 



Common-Emitter Input Impedance 

The common-emitter input impedance with 
the output ac shorted. This is a complex 
quantity. 



^ T 1 



Common-Emitter Output Admittance 

The common-emitter output admittance 
with the input ac open. This is a complex 
quantity. 




Common-Emitter Reverse Voltage 
Transfer Ratio 

The common-emitter reverse voltage transfer 
ratio with input ac open. This is a complex 
quantity. 



MAG 



Maximum Available Gain 

Device figure of merit that must be calcu- 
lated from the two port "y" parameters. 



MAG = 10 LOG 



4Re(Y 11 )RE(Y 22 ) 



MSG 



Maximum Stable Gain 

This parameter is a device figure of merit 
that is calculated from the two port "y" 
parameters. 



MSG = 10 LOG 



IVfel 



NF 



Noise Figure 

Noise figure = 10 log-inF, where F is the 
ratio of total output noise power to the 
output power due solely to the thermal 
noise of the source impedance. 

A-6 



NOISE FIGURE MUST SPECIFY 
" Vet.lc 
2) Us. I„. PBW 



WHITE 
NOISE 
SOURCE 







AMPLIFIER 

AND 
DETECTOR 






3dB 


Lo 






PAD 





■bb ' 'b 



Base « Spreading » Resistance 

Equivalent to the real part of h le at some 
specified very high frequency. 



I,' MEASUREMENT 



t7 



0) 
3 

(0 

i 

o 

o 

(0 
0) 

fi) 

a 

0) 
< 

3 

O" 

o 

(0 



rb'Cc 



Collector Base Time Constant 

This parameter is a device figure of merit 
and is measured in a specified test circuit. 



COLLECTOR BASE TIME CONSTANT 
rb c " SPECIFY -I C ,V CE , FREQUENCY 



td 



tr 



ts 



Common-Emitter Switching 
Parameters 

In the following, drive circuit conditions and 
collector circuit conditions must be specified. 
The transition times of the input must be 

negligible compared to the measured times. 

Delay Time 

The time interval during turn-on from the 
point when the input pulse at the base 
reaches 10% of its full amplitude to the 
point when the collector pulse changes from 
Oto 10% of its maximum amplitude. 

Rise Time 

The time interval during turn-on in which 
the collector pulse changes from 10% to 90% 
of its maximum amplitude. 

Storage Time 

The time interval during turn-off from the 
point when the turn-off pulse at the base 
changes from 100% to 90% of its full 
amplitude to the time when the collector 
current has changed from 100% to 90% of 
its maximum amplitude. 

Fall Time 

The time interval during turn-off in which 
the collector pulse decreases from 90% to 
10% of its maximum amplitude. 



SWITCHING PHHAME' 
















.0* • 








- 




10K 






90% 


-t! 1 


-JC* 



>- PARAMETERS 



¥ PARAMETERS ARE DEFINED BY 
ii =Vii «i ♦ Vii «a 
<! ■ 1i\ * Y» *t 



OR IN COMMON EMITTER NOTATION 
'2 = ft. •> *y„"i 



A-7 



w 

o 
.Q 

£ 

>> 
c/> 

o 
> 

(0 
(0 
(0 
O 

O 

>— 

o 
+■> 

(0 

"55 
c 

CD 



Vfe 



Common-Emitter Forward Transfer 
Admittance 

The common-emitter forward transfer admit- 
tance with output ac shorted. This is a 
complex quantity (gf e + jbf e ). 



Common-Emitter Input Admittance 

The common-emitter input admittance with 
output ac shorted. This is a complex 
quantity (g ie + b ie ). 



v PARAMETERS-COMMON EMITTER 



Common-Emitter Output Admittance 

The common-emitter output admittance 
with input ac open. This is a complex 
quantity (g oe + jb oe ). 




Vre 



Common-Emitter Reverse Transfer 
Admittance 

The common-emitter reverse transfer admit- 
tance with input ac shorted. This is a 
complex quantity (g re + jb re ). 



LARGE SIGNAL PARAMETERS 



Collector Efficiency 

This parameter applies to oscillators and 
class C amplifiers, predominantly. It is 
defined as the ratio of RF Power Out/DC 
Power In. 



t) - COLLECTOR EFFICIENCY 
(RF) vi 
P|N(DC) " l C X V CE 



Power Out 

This parameter applies to oscillators. The 
units are watts and a test circuit must be 
specified. 



SPECIFY - l c . V CE UNDER QUIESCENT CONDITIONS 



THERMAL PARAMETERS 



Rth 



Internal Junction-to Case Thermal 
Resistance 

The rated increase of junction temperature 
with respect to the case temperature per 
unit of dissipated power. It is also called 
Thermal Resistance with infinite heat sink. 

Junction-to Case Thermal Rating 

Junction-to Ambient Thermal Rating 



A-8 




National 
Semiconductor 



JFET Glossary of Symbols 



DC PARAMETERS 



BVdqo (V) Drain-Gate Breakdown Voltage with Source Open- 

or BVqdO Circuited 

The breakdown voltage of the drain-gate junction, 
measured at a specified current with the source 
open-circuited. 




BVsGO (V) Source-Gate Breakdown Voltage with Drain 

or BVqsO Open-Circuited 

The breakdown voltage of the source-gate junction, 
measured at a specified current, with the drain 
open-circuited. 




BVqss (V) 

orBV, V( B R)GSS 



Source-Gate Breakdown Voltage with Drain- 
Source Shorted 

The breakdown voltage of the source-gate and 
drain-gate junctions, measured at a specified 
current with the drain-source shorted. 




'DGO (pA) 
or IQDO 



Drain-Gate Leakage Current, Source Open-Circuited 

The leakage current of the drain-gate junction, 
measured at a specified voltage, with the source 
open-circuited. 



'goo 




id <mA> 

of I DION) 



Drain ON Current 

The drain current, measured at a specified drain- 
source voltage and gate-source voltage. 



ID(OFF) (pA) Drain Cutoff Current 

The drain cutoff current, measured at a specified 
drain-source voltage and gate-source voltage. 



id 

ly t I v ° s 2- v os 



TLJ. 



J 



IDSS < m A) 



Drain Saturation Current 

The drain current, measured at a specified drain- 
source voltage with the source shorted to the gate 
(V G S = 0) 



'oss 



lG <PA) 
or lG(ON) 



Gate Leakage Current with Drain Current Flowing 

The gate leakage current, measured at a specified 
drain current and drain-gate voltage. 




IGSS <PA) 



Gate-Source Reverse Leakage Current with Drain- 
Source Shorted 

The gate-source reverse leakage current measured 
at a specified gate-source voltage. 



*1 
j j 



A-9 



ISGO <P A > 
or IQSO 



Source-Gate Reverse Leakage Current with Drain 
Open-Circuited 

The leakage current of the source-gate junction, 
measured at a specified voltage, with the drain 
open-circuited. 



'SGO 




rDS I") 

Of r ds- RDS. 
'DS(ON) 



Drain-Source ON Resistance 

The drain-source ON resistance, measured at a 
specified gate-source voltage and drain current. 



VDS(ON) Drain-Source ON Voltage 



XT' 



i 



— » 



"as 



The drain-source ON voltage, measured at a speci- 
fied gate-source voltage and drain current. 



; " ID 



Vqs (V) 

or Vqs(ON). 
V G 



Operating Gate-Source Voltage 

The gate-source voltage, measured at a specified 
drain current and drain-source voltage. 



"GS 



VQS(F) (vi 



Forward Gate-Source Voltage 

The forward gate-source voltage, measured at 



specified current. 




VGS(OFF) (v) 
or Vp 



Gate-Source Cutoff (Pinch-Off) Voltage 

The gate-source cutoff voltage, measured at a 
specified drain current and drain-source voltage. 



T v DS ~£ V 



I 



SMALL SIGNAL PARAMETERS 



;(pF) 



or C 



iss. ^gss 



Common-Source Input Capacitance 

The common-source input capacitance measured 
between the gate and source with the drain A-C 
shorted to the source at specified drain-source and 
gate-source voltages. 




Vds 



■M (PF) 
or C os , Cdss 



Common-Source Output Capacitance 

The common-source output capacitance, measured 
between the drain and source with the source 
A— C shorted to the gate at specified drain-source 
and gate-source voltages. 




Vds 



A-10 



C rss (PF) 
oi-Crs. Cdg 



e n (nV/VRi) 
or e„, V„, E n 



9fg (mV) 
or V fg 



gfs <mV) 
or g m , Y fs , 
Re|Y fs | 



9iss </"V) 
or Y is 



9oss 0*V) 
or Y os 



G pg (dB) 



Gp S (dB) 



in (pA/VRi) 



Common-Source Reverse Transfer Capacitance 

The common-source reverse transfer capacitance, 
measured between the drain and gate at specified 
drain-source and gate source voltages. 



Equivalent Input Noise Voltage 

The equivalent input noise voltage per unit band- 
width, measured with the input A— C shorted to 
the source at a specified operating condition. 



Common- Gate Forward Transconductance 

The common-gate forward transconductance with 
the output A-C shorted. This is a complex quanti- 
ty <9fg + ibfgl- 



Common Source Forward Transconductance 

The common source forward transconductance 
with the output A-C shorted. This is a complex 
quantity (gf s + j D f s ). 



Common-Source Input Conductance 

The common-source input conductance with the 
output A-C shorted. This is a complex quantity 
(gis + ibisl- 



Common-Source Output Conductance 

The common source output conductance with the 
input A— C shorted. This is a complex quantity 
<9os + ibos>- 



Common-Gate Power Gain 

The common-gate power gain is the ratio of out- 
put power to input power. 



Common-Source Power Gain 

The common-source power gain is the ratio of out- 
put power to input power. 



Equivalent Input Noise Current 

The equivalent input noise current measured with 
the input open-circuited under specified operating 
conditions. 




Y fg- 



v G s 



v DS = o 



Yfs- 



'D I 

v GS 



V DS = 




VGS 



V DS = 




vqs-o 



Gp= 10logi _ 



- - - 



>» 
if) 
>♦— 
o 

>» 
u. 

CO 
W 
(/) 

o 
O 

UJ 



to the output noise power of the source. Measured 
at specified operating conditions and source resis- 
tance. 



source Output Noise Power 



td(ON) 



td(OFF) 



COMMON-SOURCE SWITCHING PARAMETERS 

In the following, drive circuit conditions and drain 
circuit conditions must be specified. The transition 
times of the input must be negligible compared to 
the measured times. 



Turn-On Delay Time 

The time interval during turn-on from the point 
when the input pulse at the gate reaches 10% of its 
full amplitude to the point when the drain pulse 
changes from to 10% of its maximum amplitude. 

Rise Time 



The time interval during turn-on in which the 
drain current pulse changes from 10% to 90% of 
its maximum amplitude. 

Turn-Off Delay Time 

The time interval during turn-off from the point 
when the turn-off pulse at the gate changes from 
100% to 90% of its full amplitude to the time 
when the drain current has changed from 100% to 
90% of its maximum amplitude. 

Fall Time 

The time interval during turn-off in which the 
drain current pulse decreases from 90% to 10% of 
its maximum amplitude. 




VOUT 



'DION) r 



VDD- v DS(ON) 




DUAL FET PARAMETERS 



BV G 1, G2 (V) 
or BVQ1-2 



Gate to Gate Breakdown Voltage 

The breakdown voltage of the gate to gate junc- 
tions, measured at a specified current. 



0BV G , G2 Q 



CMRR (dB) 
or CMR 



Common-Mode Rejection Ratio 

The common-mode rejection ratio is the ratio of 
the change in differential gate voltage with a 
change in the drain to gate voltage. 

CMRR = 20log 10 ^P^- 




9fs1 — 2 Common-Source Forward Transconductance Ratio 

°f 9fsl/9fs2 (Match) 

The transconductance ratio = gfsl/gfs2 x 100 (%) 
measured at specified drain-gate voltage and drain 
current. 



9oss1-2 <^V> 
Of 9os1-2 



Common-Source Output Conductance (Match) 

Output conductance match = Ig s1 — 9os2l measured 
at specified drain-gate voltage and drain current. 



IDSS1-2 (%) 
or lDSI-2. 



Drain Saturation Current Ratio (Match) 

The drain saturation current ratio = I D SS 1 ^ 
l DSS2 x 100% measured at specified drain-source 
voltages. 



IQ1-2 <P A > Differential Gate Leakage Current 

Differential gate leakage current = 1 1 C3 1 — 'C32l 
measured at specified drain-gate voltage and drain 
current. 



|Q1, G2 (pAI Gate to Gate Reverse Leakage Current 

The gate to gate reverse leakage measured at a 
specified voltage monolithic dual with diode isola- 
tion shown. 



'G1.G2 

-0-1 



V G1,G2 



V G1,G2 



v GS1-2 (mV) 
or AVqs. V os , 
|VGS1- v GS2i 



Differential Gate-Source Voltage 

The differential gate-source voltage, measured at a 
specified drain-gate voltage and drain current. 




AVQS1-2 OjV/°c> 
or A|Vqs1- 
V G S2l/AT 
AV os /AT 



Differential Gate-Source Voltage Drift 

The differential gate-source voltage drift is the 
change in the differential gate-source voltage with 
a change in device temperature at a specified 
operating condition. 



AV os 
AT 



( V GS1- V GS2)1 T 1 ~ ( v GS1- v GS2>lT2 
T1-T 2 




A-13 



s 



National 
Semiconductor 



inches 



Package Outlines 



Dimensions are in - 

(millimeters) 

Numbers in parentheses behind package titles areNS internal package codes. 



TO-3 (98) 





INCHES 


SYMBOL 


(MILLIMETERS) 




wn 


MAX 


A 


0.250 (6.35) 


0.450(11.431 


«c 


0.038 (0.965) 


0.043 (1.092) 


«B 




0.875 (22.225) 


K 


0.420 (10.6681 


0.440 (11.176) 


M 


0.205(5.2071 


0.225(5.7151 


C 




0.135 (3.429) 


D 


0.312 (7.925) 




«H 


0.151 (3.835) 


0.161 (4.0891 


F 


1.177 (29.896) 


1.197 130.404) 


<1 




0.525 (13.335) 


•2 




188 (4.7751 


G 


0.656 (16.6371 


0.675(17.146) 



SEATING PLANE 




Terminal Connections 
Pin 1 - Ground 
Pin 2- Outpui 



TO-5 (04) 



PIN 


T 


1 


E 


2 


B 


3 


C 




TO-18 (02, 11, 19) 



PIN 


T (021, (19) 


1 


E 


2 


B 


3 


C 



TO-39 (10, 16)* 



SEATING PLANE - 



030 
(0.762) 

MAX 
0.016-0.019 







PIN 


FET N (02) 


0.209 


-0.219 




S 


" (5.309 


•5.563) 


2 


D 


0.188 


-0.210 


3 


G 


'4 7 75 


5.334) 


PIN 


FET P [11! 












S 






2 


G 






3 


D 









rj 



(0.406-0.483) 



0.500 
(12J0) 
MIN 



0036-0.046 \y 
(0.9I4-1.168)X/ 





A-14 



TO-39 7) LO-PROFILE 



14.064-4.572) 



(8.890-9.398) 
0.315-0.335 



0.500 
{12.7001 
MIN 

i. 



SEATING 
PLANE 



(0.228-3.175) 




(0.406-0.483) 
O.190-0.210 



0.737-1.016) 

0.028-0.034 



10.711-0.8641 \/, 



TO-46 (06) 



PIN 


T 


1 


E 


2 


B 


3 


C 




"D 

Q> 
O 
7T 
0) 

to 
o 



o 



TO-52 (07,18) 



PIN 


T(18> 


FET (071 


1 


E 


S 


2 


B 





3 


C 


G 



TO-71 (08, 12) 



PIN 


T (08) 


FET (12) 


1 




SI 


2 


B 


D1 


3 


C 


G1 


5 


E 


S2 


6 


B 


02 


7 


C 


G2 



SEATING PLANEn 
I 



0.1)311 
10.762) 
MAX 
0.016-0.019 



(5 309-5.563) 
0.142-0.159 



JL 



500 
(12.70) 



0.036-0.046 
(0.914-1.168) 




SEATING PLANE 

IL 

D.030 
(0.762) 
MAX 
0.016-0.019 
(0.406-0.483) 



0.188-0.210 



0.500 
MIN 



0.050 
(1.2701 



(0.711-1.219) 




TV/ \\T u-tm-uw 
"V/ \\/" (0.711-1.219) 



TO 72, (23, 25. 28, 29) 



PIN 


T (25! 


FET N 125. 29) 


1 


E 


S 


2 


B 


D 


3 


C 


G 


4 


GND 


CASE 



PIN 


TI28I 


FET P (23) 


1 


B 


S 


2 


E 


G 


3 


C 


D 


4 


GND 


CASE 



(4.521 -4.851] 



SEATING PLANE 



ANln 



0.030 
(0.762) 
MAX 



D Q 



J 

0.500 
(12.701 
Mlhl 




°"6-0.046 y/ 

10.914-1 isii^y// \X 



(0.711-12951 



TO-78 (24, 27) 



PIN 


T 127) 


FET (24) 


1 


C 


SI 


2 


B 


D1 


3 


E 


G1 


5 


E 


a 


6 


B 


02 


7 


C 


G2 



(B 890-9.398) 
DIA 



(8 001 -8 509) 
DIA 



| 040 

I 5 ! - "(roil) 

MM MAX 

T 



0.100 

(2.540) 

<• 

0.029-D.D45 / /\ \ 
(0.737-1.143) \ . 

0.028-0.034 \ 
(0.711-0.864)"^^ 



SEATING 
PLANE 



111 



3 




TO-92 (71, 72, 74, 76, 77, 78) 



PIN 


75/72 (Std) 


T 


FET 


1 


C 


G 


2 


B 


S 


3 


E 


D 



92-PLUS (90, 91) 



PIN 


PACKAGE 90 


PACKAGE 91 


1 


Base 


Collector 


2 


Collector 


Base 


3 


Emitter 


Emitter 



LEADS FIT INTO 
0.016-0.019 



(0.406-0.483) 
OIA HOLE (TYP) 



0.594 
(15.088) 



PIN 


76/71 


T 


FET 


1 


C 


G 


2 


E 


□ 


3 


B 


S 



(0.143-1.397) 
0.045-0.055 



(1.143-1.3971 
0.003-0.013 



PIN 


74 


T 


FET 


1 


B 


S 


2 


C 


G 


3 


E 


D 



SEATING i 
PLANE 



5° (TYP) 
T 



PIN 


77 


T 


FET 


1 


E 


□ 


2 


B 


S 


3 


C 


G 




TO-99 (22) 



PIN 


FET 


1 


S 


2 


D 


3 


G 


4 


SUB 


5 


S 


6 


D 


7 


G 


8 


NC 




45" EQUALLY 
SMCFD 



TO-220 (37) 




Pin 1 . Base 

2. Collector 

3. Emitter 



TO-126 (38) 



) 2 3 



I2.31I-2.4M) 

0.020-0.026 



I7.366-J.874l 
0.145-0.165 



(3.683-3.S37I 
148-0.150 



i m-4 



10.508-0.6601 
0.025-0.035 



L 



115 367-16.637) 
__i 



(0.381-0.635) 



12-413-2.867) 



11.143-1.397) 

_i 



Pin 1 . Emitter 

2. Collector 

3. Base 

When mounting the device, torque not to exceed 
6.0 in lb. 

If lead bending is required, use suitable clamp or 
other supports between transistor case and point 
of bend. 



TO-202 (35, 36) 



PIN 


PACKAGE 35 


PACKAGE 36 


T 


T 


1 


Emitter 


Emitter 


2 


Base 


Collector 


3 


Collector 





(9.144-10.160) 

0110-0.120 L 

(2.794 -3 048) ~) P 



"1 0.240-0. 



\] ("6 096-6.604) 
126 132 




(2.413-2.6671 



NOTES: 

1. ALL DIM. ARE IN INCHES AND ARE HEF, 

UNLESS tOLERANCEO. 
2 043-.0S) LEAD WIDTH WITHIN 100 

OF B00». 



■o 

Q> 
O 
7T 
0) 
CQ 
(D 

o 

c 

5' 

(D 



A-17 



CO 
0) 

c 



CAVITY DUAL-IN-LINE PACKAGE D (40) 



0) 
O) 

(0 

o 

(0 
Q. 



0.300 
1*^ [7.6201 
P.EF 





H 


(19.304) 
MAX 

N N N N m 


m 












» 

0.296 


PIN NO. 1 

I0ENT - 


> 






17.569] 
MAX 
t 






hJ Lil L±J 111 lil 


UJ 




(2.540 '0.254) 



MOLDED MINI-DIP (60, 67) 



0.092 
(2.337) 
OIA 



0.690 
(2.286)- 
^_N0M 



PIN NO. 1 INDENT - 



0.030 



— (10.1601 




MAX 




wfrn m it? 






i 

0.250 0.005 




16.350 11.127) 




♦ 



(0.762) 
MAX 



('-'SI 



(0.229-0.381) 
0.045 




11.143 0.3811 
0.100 
(2U0) 



-l-IU 



0.125 (0 5081 



(3.175) 
0.018 003 MIN 



PIN 


60 


67 


1 


NC 


SI 


2 


SI 


01 


3 


D1 


NC 


4 


Gl 


Gl 


5 


S2 


S2 


6 


D2 


D2 


7 


G2 


NC 


8 


NC 


G2 



MOLDED DUAL-IN-LINE PACKAGE N (39) 



(2.337) -\ 
DIA NQM 

PIN NO. 1 INDENT- 



0.770 




-« (19.S58) f 

L« MAX 

rdi m m m m m 


• 


i 

0.250 0.005 


(6.350 :0.127l 



LlI LiJ hi Lii 111 lii LzJ 



0.030 
(57762) 
MAX 



0.065 
(1.651) 



040 
(1.016)- 
TYP 



(0.229-0.381) 
0.075 il 




4 



0.020 



- (2.540) 
TYP 



0.018 ±0.003 — MIN 

I0.457 i0.076) "J™ 



NS PACKAGE 


JEDEC 


NS PACKAGE 


JEDEC 


CODE 


CODE 


CODE 


CODE 


02 


TO- 18 Glass 


37 


TO-220 BCE 


03 


TO-5 Glass 


38 


TO-126 ECB 


04 


TO-5 Glass 


39 


TO-116 14-Lead M/DIP CN 


05 


TO-71 Diff. Amp. TO-18 


40 


TO-116 14-Lead Ceramic DIP CD 


06 


TO-46 Solid 


41 


TO-116 14-Lead Molded Array 


07 


TO-52 Solid 


56 


TO- 100 10- Lead Header 


08 


TO-71 Diff. Amp. TO-18 


57 


TO- 100 10- Lead Header 


09 


TO-39 Solid Kovar 


58 


16-Lead Side Braze DIP 


10 


TO-39 Solid Steel 


59 


16-Lead Size Braze DIP 


11 


TO-18 Glass SDG 


60 


8-Lead Molded DIP, Plastic (CN) 


12 


TO-71 Glass TO-18 Diff. Amp. 


61 


14-Lead Molded DIP, Plastic (CN) 


13 


TO-46 Header/TO-72 Can (4-Lead) 


62 


16-Lead Molded DIP, Plastic (CN) 


16 


TO-39 Solid Kovar 


63 


14-Lead Side Braze DIP 


17 


TO-39 Solid Steel Low Profile 


64 


14-Lead Side Braze DIP 


18 


TO-52 Glass 


65 


14-Lead Ceramic DIP (CJ) 


19 


TO-18 Solid 


66 


16-Lead Ceramic DIP (CJ) 


22 


TO-5 10- Lead 


67 


8-Lead Molded DIP (CN) 


23 


TO-72 Glass 4-Lead TO-18 SGD 


69 


TO-92 3-Lead Top Gate Plastic GSD 


24 


TO-78 Glass TO-5 Diff. Amp. 


71 


TO-92 BEC 


25 


TO-72 4-Lead TO-18 EBC 


72 


TO-92 EBC 


27 


TO-78 Diff. Amp. TO-5 


74 


TO-92 ECB 


28 


TO-72 4-Lead TO-18 BEC 


75 


TO-92 Faraday Shield EBC 


29 


TO-72 Glass TO-18 SDG 


76 


TO-92 Faraday Shield BEC 




4-Lead Top Gate 


77 


TO-92 CBE 


30 


TO-78 Diff. Amp. TO-5 


78 


TO-92 Faraday Shield CEB 


31 


TO-202 ECB 


79 


TO-92 C-E 


32 


TO-126 EC- 


90 


Mini-Watt ECB 


35 


TO-202 EBC 


91 


Mini-Watt EBC 


36 


TO-202 BCE 


98 


TO-3 



A-19 



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